WO2016106876A1 - 薄膜晶体管阵列基板及其制造方法、显示装置 - Google Patents

薄膜晶体管阵列基板及其制造方法、显示装置 Download PDF

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WO2016106876A1
WO2016106876A1 PCT/CN2015/070964 CN2015070964W WO2016106876A1 WO 2016106876 A1 WO2016106876 A1 WO 2016106876A1 CN 2015070964 W CN2015070964 W CN 2015070964W WO 2016106876 A1 WO2016106876 A1 WO 2016106876A1
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layer
metal layer
planarization
region
planarization layer
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PCT/CN2015/070964
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English (en)
French (fr)
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杜海波
申智渊
明星
占伟
虞晓江
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深圳市华星光电技术有限公司
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Publication of WO2016106876A1 publication Critical patent/WO2016106876A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a thin film transistor array substrate and a method of fabricating the same, and to a display device having the thin film transistor array substrate.
  • a method of fabricating a thin film transistor array substrate comprising:
  • first insulating layer Forming a first insulating layer, a common electrode layer, a second insulating layer, and a pixel electrode layer having via holes sequentially on the pattern including the planarization layer and the touch metal layer, and passing the touch metal layer through the The via is electrically connected to the common electrode layer, and the source is electrically connected to the pixel electrode layer through the common electrode layer.
  • the method of forming a planarization layer and having the planarization layer have a groove comprises:
  • the semi-transmissive region partially retains the photoresist material corresponding to the predetermined region, and the photoresist material of the other region is completely retained by the light-shielding region to form the planarization layer and the recess corresponding to the predetermined region.
  • the method for forming the touch metal layer comprises:
  • a touch metal layer formed on the planarization layer, an upper surface of the touch metal layer being flush with an upper surface of the planarization layer;
  • first insulating layer Forming a first insulating layer, a common electrode layer, a second insulating layer, and a pixel electrode layer on the pattern including the planarization layer and the touch metal layer; wherein the touch metal layer is disposed at the first
  • the via holes on the insulating layer are electrically connected to the common electrode layer, and the source is electrically connected to the pixel electrode layer through the common electrode layer.
  • the recess is located directly above the drain.
  • a display device including a thin film transistor array substrate, the thin film transistor array substrate includes:
  • planarization layer formed on the pattern including the drain and the source, the planarization layer having a recess for accommodating the touch metal layer;
  • first insulating layer Forming a first insulating layer, a common electrode layer, a second insulating layer, and a pixel electrode layer on the pattern including the planarization layer and the touch metal layer; wherein the touch metal layer is disposed at the first
  • the via holes on the insulating layer are electrically connected to the common electrode layer, and the source is electrically connected to the pixel electrode layer through the common electrode layer.
  • the recess is located directly above the drain.
  • the planarization layer is composed of a fluorinated polymer, parylene, methylcyclopentenolone or polyacrylic acid. Made of one of the esters.
  • FIG. 1 is a flow chart showing a method of fabricating a thin film transistor array substrate according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing the structure of a planarization layer formed by the method shown in FIG. 3;
  • FIG. 6 is a schematic view showing the structure of a touch metal layer formed by performing exposure and development on the metal layer shown in FIG. 5.
  • FIG. 1 is a flow chart showing a method of fabricating a thin film transistor array substrate according to an embodiment of the present invention. The following steps included in the manufacturing method are explained in detail below with reference to FIGS. 1 and 2:
  • Step 101 A drain electrode 21 and a source electrode 22 are formed on the base substrate 1.
  • the specific process flow and the formed graphic structure of this step are basically the same as the prior art, and are not described herein again.
  • the base substrate 1 includes, in addition to the substrate for carrying the drain 21 and the source 22, various layer structures below the substrate.
  • Step 102 Form a planarization layer 3 on the pattern including the drain 21 and the source 22, and make the planarization layer 3 have a recess 31 for accommodating the touch metal layer 41.
  • planarization layer 3 a method of forming the planarization layer 3 will be described in detail below in conjunction with FIGS. 3 and 4.
  • Step 103 Form the touch metal layer 41 on the planarization layer 3, and make the upper surface of the touch metal layer 41 flush with the upper surface of the planarization layer 3.
  • the first insulating layer 5, the common electrode layer 6, the second insulating layer 7, and the pixel electrode layer 8 which are sequentially arranged from bottom to top are sequentially formed on the planarization layer 3 and the touch metal layer 41.
  • the coverage area of each layer is not limited to the case shown in FIG. 2, and in the process of forming the first insulating layer 5, the via 51 on the first insulating layer 5 is simultaneously formed to pass the touch metal layer 41.
  • the hole 51 is electrically connected to the common electrode layer 6.
  • FIG. 2 for the region above the source 22 only the common electrode layer 6 on both sides of the region is covered with the second insulating layer 7, and the other portions of the region are free of insulating layers, but from bottom to top.
  • a groove 31 (or a groove) for accommodating the touch metal layer 41 as a touch sensing electrode is formed on the planarization layer 3 by using the method for manufacturing the thin film transistor array substrate according to the embodiment.
  • Making the touch metal layer 41 The upper surface is flush with the upper surface of the planarization layer 3. Therefore, the surface unevenness of each layer structure formed on the planarization layer 3 and the touch metal layer 41 is greatly improved, and the surface unevenness of the thin film crystal plate array substrate is greatly improved, and the PI film and the array substrate are increased.
  • the adhesion between the displays improves the display performance of the display device.
  • FIG. 3 shows a schematic view of forming a planarization layer 3 on the pattern including the drain 21 and the source 22 shown in FIG. 2, and
  • FIG. 4 shows a planarization layer formed by the method shown in FIG. 3 is a schematic diagram of the structure.
  • the method of forming the planarization layer 3 and causing the planarization layer 3 to have the recess 31 includes the following steps:
  • the planarization layer 3 is made of the following organic materials: fluorinated polymers, parylenes, Methylcyclopentene ketone (cyclotene), polyacrylate (polyacrylated). That is, the photoresist material formed in the above step is one of a fluorinated polymer, parylene, methylcyclopentenolone or polyacrylate.
  • the photoresist material is exposed and developed by using the semi-exposure mask 9 having the light-transmitting region 93, the semi-transmissive region 92 and the light-shielding region 91, and the photoresist material corresponding to the region where the source 22 is located is removed through the light-transmitting region 93.
  • the semi-transmissive region 92 partially retains the photoresist material corresponding to the predetermined region, and completely retains the photoresist material of other regions through the light-shielding region 91 to form the planarization layer 3 and the recess 31 corresponding to the predetermined region.
  • the half exposure mask 9 has a light transmitting region 93 having a light transmittance of 100%, a semi-light transmitting region 92 having a light transmittance of more than 0% and less than 100%, and a light transmittance of 0%.
  • the amount of light transmitted by the semi-transmissive region 92 can be adjusted according to the specific implementation environment.
  • the semi-transmissive region 92 of the half-exposure mask 9 corresponds to the region where the drain electrode 21 is located
  • the light-transmitting region 93 corresponds to the region where the source electrode 22 is located
  • the light-shielding region 91 corresponds to other areas of the planarization layer 3.
  • the photoresist material corresponding to the region where the source 22 is located is removed through the transparent region 93, so that the source 22 is electrically connected to other conductive layers formed subsequently; the portion of the drain 21 is partially retained by the semi-transmissive region 92. Corresponding photoresist material; the photoresist material of other regions is completely retained by the light shielding region 91.
  • the planarization layer 3 as shown in FIG. 4 and the recess 31 provided on the planarization layer 3 are finally formed.
  • a recess 31 is formed in a predetermined area of the planarization layer 3, and the recess 31 is used for accommodating the subsequently formed touch metal layer 41, thereby greatly improving the accommodation.
  • the degree of unevenness of the upper surface of the planarization layer 3 of the metal layer 41 is controlled to improve the display performance of the finally manufactured display device.
  • FIG. 5 is shown in FIG.
  • FIG. 6 is a schematic view showing the structure of the touch metal layer 41 formed by exposing and developing the metal layer 4 shown in FIG.
  • the method of forming the touch metal layer 41 includes the following steps:
  • the metal layer 4 is formed on the planarization layer 3, and the upper surface of the metal layer 4 corresponding to the region where the groove 31 is located is flush with the upper surface of the planarization layer 3.
  • the method of forming the metal layer 4 in this step includes, but is not limited to, deposition, coating, or sputtering. Through this step, the metal layer 4 is just filled with the recess 31 provided on the planarization layer 3.
  • the metal layer 4 is exposed and developed to completely retain the metal layer 4 corresponding to the region where the recess 31 is located, and the metal layer 4 corresponding to the other regions is removed to form the touch metal layer 41.
  • the metal layer 4 formed in the region where the recess 31 is located is etched away by yellow light irradiation, and the metal layer 4 for just filling the recess 31 is as shown in the figure.
  • the drain 21 and the source 22 are formed on the base substrate 1.
  • the planarization layer 3 is formed on a pattern including the drain 21 and the source 22, and the planarization layer 3 has a recess 31 for accommodating the touch metal layer 41.
  • the touch metal layer 41 is formed on the planarization layer 3, and the upper surface of the touch metal layer 41 is flush with the upper surface of the planarization layer 3.
  • the first insulating layer 5, the common electrode layer 6, the second insulating layer 7, and the pixel electrode layer 8 are sequentially formed on the pattern including the planarization layer 3 and the touch metal layer 41 in order from bottom to top.
  • a via 51 is disposed on the first insulating layer 5, and the touch metal layer 41 is electrically connected to the common electrode layer 6 through the via 51, and the source 22 is electrically connected to the pixel electrode layer 8 through the common electrode layer 6.
  • the recess 31 is located directly above the drain 21.
  • the planarization layer 3 is made of an organic material: fluorinated polymers, parylenes, methyl groups. Cyclopentene, polyacrylated.
  • an embodiment of the present invention further provides a display device having the above thin film transistor array substrate.
  • the display device can be: a liquid crystal display panel, an electronic paper, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet A product or part that has any display function, such as a computer.

Abstract

一种薄膜晶体管阵列基板及其制造方法、显示装置，方法包括形成漏极（21）和源极（22）；形成具有凹槽（31）的平坦化层（3）；形成上表面与平坦化层的上表面平齐的触控金属层（41）；形成第一绝缘层（5）、公共电极层（6）、第二绝缘层（7）和像素电极层（8）。有效地改善了薄膜晶体管阵列基板的表面凹凸程度，增加了PI膜与阵列基板间的黏附性，提高了显示装置的显示性能。

Description

薄膜晶体管阵列基板及其制造方法、显示装置
本申请要求享有2014年12月31日提交的名称为“薄膜晶体管阵列基板及其制造方法、显示装置”的中国专利申请CN201410856155.5的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种薄膜晶体管阵列基板及其制造方法，还涉及一种具有该薄膜晶体管阵列基板的显示装置。
背景技术
一般的TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管-液晶显示器)的制造要经过以下三个步骤来完成：TFT阵列基板制造步骤，CF(彩色滤光板)基板制造步骤，以及液晶成盒(Cell)制造步骤。其中，在进行液晶成盒时，主要通过分别在TFT侧基板(即TFT阵列基板)上和CF侧基板上涂覆PI(聚酰亚胺)来进行液晶分子配向，使液晶分子在自然状态下呈特定角度，并在此后经液晶滴注，封装成盒，及Module(模组)工艺后，形成可在外加信号下显示图案的液晶显示面板。
在现有的LTPS-TFT(Low Temperature Poly-silicon-Thin Film Transistor，低温多晶硅-薄膜晶体管)阵列基板制作过程中，由于工序复杂，下层膜经多次蚀刻处理后，膜厚度(简称膜厚)的差异很大，因此使得在涂覆PI时，PI膜与下层基板的黏附性变差。为克服上述缺陷(即，膜厚差异造成的表面凸凹不平的缺陷)，现有技术中在LTPS-TFT制造中使用了平坦化层(PLN)。
然而，随着LTPS-Touch(低温多晶硅-触控)技术的发展，在In Cell型嵌入式触控(Touch in Cell)技术中，由于要使用触控金属层作为触控感应电极(Touch Sensor)，而触控金属层较厚，因此即使在使用平坦化层的情况下，最终还会导致涂覆PI前阵列基板表面凹凸程度的增加，使得涂覆后的PI膜容易脱落，造成显示不良。
发明内容
本发明所要解决的技术问题是：现有技术中In Cell型嵌入式触控显示面板的薄膜晶体管阵列基板的制造过程中，由于触控金属层的存在，会导致在涂覆PI前阵列基板表面凹凸程度的增大，从而使得涂覆后的PI膜容易脱落，造成显示不良。
为了解决上述技术问题，本发明提供了一种薄膜晶体管阵列基板及其制造方法，还提供了一种具有该薄膜晶体管阵列基板的显示装置。
根据本发明的一个方面，提供了一种薄膜晶体管阵列基板的制造方法，其包括：
在衬底基板上形成漏极和源极；
在包括漏极和源极的图形上形成平坦化层，并使所述平坦化层具有用于容置触控金属层的凹槽；
在所述平坦化层上形成触控金属层，并使所述触控金属层的上表面与所述平坦化层的上表面平齐；
在包括所述平坦化层和所述触控金属层的图形上依次形成具有过孔的第一绝缘层、公共电极层、第二绝缘层和像素电极层，并使触控金属层通过所述过孔与公共电极层电连接，且源极通过公共电极层与像素电极层电连接。
优选的是，形成平坦化层，并使所述平坦化层具有凹槽的方法包括：
在包括所述漏极和所述源极的图形上涂覆光阻材料；
采用具有透光区、半透光区和遮光区的半曝光光罩对所述光阻材料进行曝光显影，通过所述透光区去除所述源极所在区域对应的光阻材料，通过所述半透光区部分保留预设区域对应的光阻材料，通过所述遮光区完全保留其它区域的光阻材料，以形成所述平坦化层和对应所述预设区域的凹槽。
优选的是，所述预设区域为所述漏极所在的区域。
优选的是，所述光阻材料为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种。
优选的是，形成触控金属层的方法包括：
在所述平坦化层上形成金属层，并使所述凹槽所在区域对应的金属层的上表面与所述平坦化层的上表面平齐；
对所述金属层进行曝光显影，完全保留所述凹槽所在区域对应的金属层，去除其它区 域对应的金属层，以形成所述触控金属层。
根据本发明的另一个方面，提供了一种薄膜晶体管阵列基板，其包括：
衬底基板；
形成在所述衬底基板上的漏极和源极；
形成在包括漏极和源极的图形上的平坦化层，所述平坦化层具有用于容置触控金属层的凹槽；
形成在所述平坦化层上的触控金属层，所述触控金属层的上表面与所述平坦化层的上表面平齐；以及
依次形成在包括所述平坦化层和所述触控金属层的图形上的第一绝缘层、公共电极层、第二绝缘层和像素电极层；其中触控金属层通过设置在所述第一绝缘层上的过孔与公共电极层电连接，源极通过公共电极层与像素电极层电连接。
优选的是，所述凹槽位于所述漏极的正上方。
优选的是，所述平坦化层由氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种制成。
根据本发明的另一个方面，提供了一种显示装置，其包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：
衬底基板；
形成在所述衬底基板上的漏极和源极；
形成在包括漏极和源极的图形上的平坦化层，所述平坦化层具有用于容置触控金属层的凹槽；
形成在所述平坦化层上的触控金属层，所述触控金属层的上表面与所述平坦化层的上表面平齐；以及
依次形成在包括所述平坦化层和所述触控金属层的图形上的第一绝缘层、公共电极层、第二绝缘层和像素电极层；其中触控金属层通过设置在所述第一绝缘层上的过孔与公共电极层电连接，源极通过公共电极层与像素电极层电连接。
优选的是，所述凹槽位于所述漏极的正上方。
优选的是，所述平坦化层由氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸 酯中的一种制成。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
应用本实施例所述的薄膜晶体管阵列基板的制造方法，在平坦化层上形成用于容置作为触控感应电极的触控金属层的凹槽(或者称为沟槽)，并使触控金属层的上表面与平坦化层的上表面平齐。因此，大大改善了形成在平坦化层和触控金属层之上的各层结构的表面凹凸程度，最终大大改善了薄膜晶体板阵列基板的表面凹凸程度，增加了PI膜与阵列基板之间的黏附性，提高了显示装置的显示性能。
本发明的其它特征和优点将在随后的说明书中阐述，并且部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1示出了本发明实施例薄膜晶体管阵列基板的制造方法的流程图；
图2示出了采用图1所示的方法制造而成的薄膜晶体管阵列基板的结构示意图；
图3示出了在图2中所示的包括漏极和源极的图形上形成平坦化层的示意图；
图4示出了采用图3中所示的方法形成的平坦化层的结构示意图；
图5示出了在图4中所示的平坦化层上形成金属层的示意图；
图6示出了对图5中所示的金属层进行曝光显影后形成的触控金属层的结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明所要解决的技术问题是：现有技术中In Cell型嵌入式触控显示面板的薄膜晶 体管阵列基板的制造过程中，由于触控金属层的存在，会导致在涂覆PI前阵列基板表面凹凸程度的增大，从而使得涂覆后的PI膜容易脱落，造成显示不良。为解决上述技术问题，本发明实施例提供了一种薄膜晶体管阵列基板的制造方法。
如图1所示，是本发明实施例薄膜晶体管阵列基板的制造方法的流程图。下面参照图1和图2详细阐述该制造方法包括的以下步骤：
步骤101：在衬底基板1上形成漏极21和源极22。此步骤的具体工艺流程及形成的图形结构和现有技术基本相同，此处不再赘述。实际上，衬底基板1除了包含用于承载漏极21和源极22的基板外，还包括位于该基板以下的各层结构。
步骤102：在包括漏极21和源极22的图形上形成平坦化层3，并使平坦化层3具有用于容置触控金属层41的凹槽31。
具体地，平坦化层3的形成方法将在下文中结合图3和图4进行详细地阐述。
步骤103：在平坦化层3上形成触控金属层41，并使触控金属层41的上表面与平坦化层3的上表面平齐。
具体地，触控金属层41的形成方法将在下文中结合图5和图6进行详细地阐述。
步骤104：在包括平坦化层3和触控金属层41的图形上依次形成具有过孔51的第一绝缘层5、公共电极层6、第二绝缘层7和像素电极层8，并使触控金属层41通过过孔51与公共电极层6电连接，且源极22通过公共电极层6与像素电极层8电连接。
具体地，参照图2，在平坦化层3和触控金属层41上依次形成从下至上顺次排列的第一绝缘层5、公共电极层6、第二绝缘层7和像素电极层8。其中各层的覆盖区域不限于图2所示的情况，并且在形成第一绝缘层5的过程中，同时形成第一绝缘层5上的过孔51，以使触控金属层41通过该过孔51与公共电极层6电连接。另外，仍然参照图2，针对源极22上方的区域，仅该区域两侧的公共电极层6上覆盖有第二绝缘层7，该区域的其它部分均无绝缘层，而是从下至上依次设置的源极22、公共电极层6和像素电极层8，从而源极22与公共电极层6电连接，公共电极层6与像素电极层8电连接。一般地，第一绝缘层5和第二绝缘层7均优选地由单层氧化硅(SiO)、单层氮化硅(SiN)、或者二者一起等无机阻隔材料制成。
应用本实施例所述的薄膜晶体管阵列基板的制造方法，在平坦化层3上形成用于容置作为触控感应电极的触控金属层41的凹槽31(或者称为沟槽)，并使触控金属层41的 上表面与平坦化层3的上表面平齐。因此，大大改善了形成在平坦化层3和触控金属层41之上的各层结构的表面凹凸程度，最终大大改善了薄膜晶体板阵列基板的表面凹凸程度，增加了PI膜与阵列基板之间的黏附性，提高了显示装置的显示性能。
下面结合图3和图4详细阐述平坦化层3和设置在平坦化层3上的凹槽31的形成方法。其中图3示出了在图2中所示的包括漏极21和源极22的图形上形成平坦化层3的示意图，图4示出了采用图3中所示的方法形成的平坦化层3的结构示意图。形成平坦化层3，并使平坦化层3具有凹槽31的方法包括以下步骤：
首先，在包括漏极21和源极22的图形上涂覆光阻材料。
具体地，在本发明一优选的实施例中，为了提高平坦化层3的平坦度，采用如下有机材料制造平坦化层3：氟化聚合物(fluorinated polymers)、聚对二甲苯(parylenes)、甲基环戊烯醇酮(cyclotene)、聚丙烯酸酯(polyacrylated)。即上述步骤中形成的光阻材料为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种。
其次，采用具有透光区93、半透光区92和遮光区91的半曝光光罩9对光阻材料进行曝光显影，通过透光区93去除源极22所在区域对应的光阻材料，通过半透光区92部分保留预设区域对应的光阻材料，通过遮光区91完全保留其它区域的光阻材料，以形成平坦化层3和对应预设区域的凹槽31。
具体地，参照图3，半曝光光罩9具有透光率为100％的透光区93、透光率为大于0％且小于100％的半透光区92，以及透光率为0％的遮光区91。其中半透光区92的透光量可根据具体实施环境进行调整。另外，在本发明一优选的实施例中，半曝光光罩9的半透光区92与漏极21所在的区域相对应，透光区93与源极22所在的区域相对应，而遮光区91与平坦化层3的其它区域相对应。经曝光显影后，通过透光区93去除源极22所在区域对应的光阻材料，以便源极22与后续形成的其它导电层进行电连接；通过半透光区92部分保留漏极21所在区域对应的光阻材料；通过遮光区91完全保留其它区域的光阻材料。采用上述方法，最终形成如图4所示的平坦化层3和设置在平坦化层3上的凹槽31。
在本实施例中，采用半曝光技术，在平坦化层3的预设区域形成凹槽31，该凹槽31用于容置后续形成的触控金属层41，从而大大改善了容置有触控金属层41的平坦化层3的上表面的凹凸程度，有利于提高最终制造的显示装置的显示性能。
下面结合图5和图6详细阐述形成触控金属层41的方法，其中图5示出了在图4中 所示的平坦化层3上形成金属层4的示意图，图6示出了对图5中所示的金属层4进行曝光显影后形成的触控金属层41的结构示意图。形成触控金属层41的方法包括以下步骤：
首先，在平坦化层3上形成金属层4，并使凹槽31所在区域对应的金属层4的上表面与平坦化层3的上表面平齐。
具体地，此步骤中金属层4的形成方法包括但不限于沉积、涂覆或者溅射。通过此步骤，使金属层4恰好填满设置在平坦化层3上的凹槽31。
其次，对金属层4进行曝光显影，完全保留凹槽31所在区域对应的金属层4，去除其它区域对应的金属层4，以形成触控金属层41。
具体地，除了形成在凹槽31所在区域的金属层4之外，通过黄光照射，将其它区域形成的金属层4蚀刻去除，用于恰好填满凹槽31的金属层4即为如图6所示的触控金属层41。
相应地，本发明实施例还提供了一种采用上述方法制造而成的薄膜晶体管阵列基板。仍然参照图2，是该薄膜晶体管阵列基板的结构示意图，该薄膜晶体管阵列基板包括衬底基板1、漏极21、源极22、平坦化层3、触控金属层41、第一绝缘层5、公共电极层6、第二绝缘层7和像素电极层8。
具体地，漏极21和源极22形成在衬底基板1上。平坦化层3形成在包括漏极21和源极22的图形上，并且平坦化层3具有用于容置触控金属层41的凹槽31。触控金属层41形成在平坦化层3上，并且触控金属层41的上表面与平坦化层3的上表面平齐。第一绝缘层5、公共电极层6、第二绝缘层7和像素电极层8按照从下至上的顺序依次形成在包括平坦化层3和触控金属层41的图形上。另外，在第一绝缘层5上设置有过孔51，触控金属层41通过该过孔51与公共电极层6电连接，源极22通过公共电极层6与像素电极层8电连接。
在本发明一优选的实施例中，凹槽31位于漏极21的正上方。
在本发明一优选的实施例中，为了提高平坦化层3的平坦度，平坦化层3由如下有机材料制成：氟化聚合物(fluorinated polymers)、聚对二甲苯(parylenes)、甲基环戊烯醇酮(cyclotene)、聚丙烯酸酯(polyacrylated)。
相应地，本发明实施例还提供了一种具有上述薄膜晶体管阵列基板的显示装置。该显示装置可以为：液晶显示面板、电子纸、液晶电视、液晶显示器、数码相框、手机、平板 电脑等具有任何显示功能的产品或部件。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (14)

  1. 一种薄膜晶体管阵列基板的制造方法，包括：
    在衬底基板上形成漏极和源极；
    在包括漏极和源极的图形上形成平坦化层，并使所述平坦化层具有用于容置触控金属层的凹槽；
    在所述平坦化层上形成触控金属层，并使所述触控金属层的上表面与所述平坦化层的上表面平齐；
    在包括所述平坦化层和所述触控金属层的图形上依次形成具有过孔的第一绝缘层、公共电极层、第二绝缘层和像素电极层，并使触控金属层通过所述过孔与公共电极层电连接，且源极通过公共电极层与像素电极层电连接。
  2. 根据权利要求1所述的方法，其中，形成触控金属层的方法包括：
    在所述平坦化层上形成金属层，并使所述凹槽所在区域对应的金属层的上表面与所述平坦化层的上表面平齐；
    对所述金属层进行曝光显影，完全保留所述凹槽所在区域对应的金属层，去除其它区域对应的金属层，以形成所述触控金属层。
  3. 根据权利要求1所述的方法，其中，形成平坦化层，并使所述平坦化层具有凹槽的方法包括：
    在包括所述漏极和所述源极的图形上涂覆光阻材料；
    采用具有透光区、半透光区和遮光区的半曝光光罩对所述光阻材料进行曝光显影，通过所述透光区去除所述源极所在区域对应的光阻材料，通过所述半透光区部分保留预设区域对应的光阻材料，通过所述遮光区完全保留其它区域的光阻材料，以形成所述平坦化层和对应所述预设区域的凹槽。
  4. 根据权利要求3所述的方法，其中，形成触控金属层的方法包括：
    在所述平坦化层上形成金属层，并使所述凹槽所在区域对应的金属层的上表面与所述平坦化层的上表面平齐；
    对所述金属层进行曝光显影，完全保留所述凹槽所在区域对应的金属层，去除其它区域对应的金属层，以形成所述触控金属层。
  5. 根据权利要求3所述的方法，其中，所述预设区域为所述漏极所在的区域。
  6. 根据权利要求5所述的方法，其中，形成触控金属层的方法包括：
    在所述平坦化层上形成金属层，并使所述凹槽所在区域对应的金属层的上表面与所述平坦化层的上表面平齐；
    对所述金属层进行曝光显影，完全保留所述凹槽所在区域对应的金属层，去除其它区域对应的金属层，以形成所述触控金属层。
  7. 根据权利要求3所述的方法，其中，所述光阻材料为氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种。
  8. 根据权利要求7所述的方法，其中，形成触控金属层的方法包括：
    在所述平坦化层上形成金属层，并使所述凹槽所在区域对应的金属层的上表面与所述平坦化层的上表面平齐；
    对所述金属层进行曝光显影，完全保留所述凹槽所在区域对应的金属层，去除其它区域对应的金属层，以形成所述触控金属层。
  9. 一种薄膜晶体管阵列基板，包括：
    衬底基板；
    形成在所述衬底基板上的漏极和源极；
    形成在包括漏极和源极的图形上的平坦化层，所述平坦化层具有用于容置触控金属层的凹槽；
    形成在所述平坦化层上的触控金属层，所述触控金属层的上表面与所述平坦化层的上表面平齐；以及
    依次形成在包括所述平坦化层和所述触控金属层的图形上的第一绝缘层、公共电极层、第二绝缘层和像素电极层；其中触控金属层通过设置在所述第一绝缘层上的过孔与公共电极层电连接，源极通过公共电极层与像素电极层电连接。
  10. 根据权利要求9所述的薄膜晶体管阵列基板，其中，所述平坦化层由氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种制成。
  11. 根据权利要求9所述的薄膜晶体管阵列基板，其中，所述凹槽位于所述漏极的正上方。
  12. 根据权利要求11所述的薄膜晶体管阵列基板，其中，所述平坦化层由氟化聚合物、聚对二甲苯、甲基环戊烯醇酮或者聚丙烯酸酯中的一种制成。
  13. 一种显示装置，包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：
    衬底基板；
    形成在所述衬底基板上的漏极和源极；
    形成在包括漏极和源极的图形上的平坦化层，所述平坦化层具有用于容置触控金属层的凹槽；
    形成在所述平坦化层上的触控金属层，所述触控金属层的上表面与所述平坦化层的上表面平齐；以及
    依次形成在包括所述平坦化层和所述触控金属层的图形上的第一绝缘层、公共电极层、第二绝缘层和像素电极层；其中触控金属层通过设置在所述第一绝缘层上的过孔与公共电极层电连接，源极通过公共电极层与像素电极层电连接。
  14. 根据权利要求13所述的显示装置，其中，所述凹槽位于所述漏极的正上方。
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