WO2016101373A1 - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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Publication number
WO2016101373A1
WO2016101373A1 PCT/CN2015/070960 CN2015070960W WO2016101373A1 WO 2016101373 A1 WO2016101373 A1 WO 2016101373A1 CN 2015070960 W CN2015070960 W CN 2015070960W WO 2016101373 A1 WO2016101373 A1 WO 2016101373A1
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voltage dividing
electrode
line
pixel
sub
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PCT/CN2015/070960
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English (en)
French (fr)
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阙祥灯
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深圳市华星光电技术有限公司
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Priority to US14/418,602 priority Critical patent/US20160246140A1/en
Publication of WO2016101373A1 publication Critical patent/WO2016101373A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of display technologies, and in particular to an array substrate and a display device.
  • liquid crystal displays have become the most common display devices.
  • a Vertical Alignment (VA) type liquid crystal display is a common liquid crystal display.
  • each pixel unit is divided into a main pixel area and a sub-pixel area, and a voltage dividing capacitor is further added.
  • the voltage dividing capacitor Cdown is formed by overlapping a portion of the common electrode line (Com) 3 with the voltage dividing electrode 2.
  • the first transistor T1 and the second transistor T2 are first turned on by the driving scan line (Gate1) 11, and the data line (Data) 4 is directed to the main pixel electrode (not shown) in the main pixel region 100 and The sub-pixel electrodes (not shown) in the sub-pixel region 200 are charged with the same potential.
  • the third transistor T3 is turned on by the voltage division scan line (Gate2) 12, and the sub-pixel electrode is divided by the voltage dividing capacitor so that the potential of the sub-pixel electrode is lower than that of the main pixel electrode.
  • the voltage dividing capacitor affects the aperture ratio of the pixel unit. Especially in the current trend of higher and higher resolution and smaller and smaller pixel unit area, the influence of the existing voltage dividing capacitor on the aperture ratio is more obvious.
  • the present invention provides an array substrate including a plurality of pixel units, the pixel unit including a main pixel area, and a second a pixel region, a first voltage dividing capacitor, a driving scan line, and a divided scan line;
  • the first voltage dividing capacitor is formed by overlapping a voltage dividing electrode and the driving scan line, or is formed by overlapping a voltage dividing electrode and the voltage dividing scanning line.
  • the pixel unit further includes a second voltage dividing capacitor and a common electrode line;
  • the second voltage dividing capacitor is formed by overlapping the voltage dividing electrode and the common electrode line.
  • the driving scan line, the divided voltage scanning line, and the common electrode line are located in the same layer.
  • the pixel unit further includes a data line, and the voltage dividing electrode is located in the same layer as the data line.
  • a first transistor, a second transistor, and a third transistor are further disposed in the pixel unit;
  • a gate of the first transistor is connected to the driving scan line, a source is connected to the data line, and a drain is connected to a main pixel electrode in the main pixel region;
  • a gate of the second transistor is connected to the driving scan line, a source is connected to the data line, and a drain is connected to a sub-pixel electrode in the sub-pixel region;
  • the gate of the third transistor is connected to the divided scan line, the source is connected to the sub-pixel electrode, and the drain is connected to the voltage dividing electrode.
  • the drain of the third transistor and the partial voltage are extremely monolithic.
  • the present invention also provides a display device comprising a color filter substrate and the above array substrate.
  • the display device is a vertically arranged display device.
  • the present invention provides the following beneficial effects: in the array substrate provided by the present invention, the first voltage dividing capacitor in the pixel unit is formed by overlapping the voltage dividing electrode and the driving scan line, or is formed by overlapping the voltage dividing electrode and the voltage dividing scanning line. Rather than being formed by overlapping the voltage dividing electrode with the common electrode line. In this way, the area of the common electrode line in the pixel unit can be reduced, and the area of the driving scan line and the divided scan line is not required to be increased, thereby improving the aperture ratio of the pixel unit, and improving the voltage dividing capacitor affecting the pixel unit in the prior art. The technical problem of the aperture ratio.
  • FIG. 1 is a schematic view of a pixel unit in a conventional array substrate
  • FIG. 2 is a circuit diagram of a pixel unit in a conventional array substrate
  • FIG. 3 is a schematic diagram of a pixel unit in an array substrate according to Embodiment 1 of the present invention.
  • FIG. 4 is a circuit diagram of a pixel unit in an array substrate according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram of another embodiment of a pixel unit in an array substrate according to Embodiment 1 of the present invention.
  • FIG. 6 is a circuit diagram of another embodiment of a pixel unit in an array substrate according to Embodiment 1 of the present invention.
  • FIG. 7 is a schematic diagram of a pixel unit in an array substrate according to Embodiment 2 of the present invention.
  • FIG. 8 is a circuit diagram of a pixel unit in an array substrate according to Embodiment 2 of the present invention.
  • FIG. 9 is a schematic diagram of another embodiment of a pixel unit in an array substrate according to Embodiment 2 of the present invention.
  • FIG. 10 is a circuit diagram of another embodiment of a pixel unit in an array substrate according to Embodiment 2 of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the embodiment of the invention provides an array substrate, which can be applied to a VA type liquid crystal display, and the array substrate includes a plurality of pixel units.
  • the pixel unit includes a main pixel region 100, a sub-pixel region 200, a first voltage dividing capacitor Cdown1, a driving scan line (Gate1) 11, and a divided scanning line (Gate2) 12.
  • the main pixel region 100 is provided with a main pixel electrode (not shown), and the sub-pixel region 200 is provided with a sub-pixel electrode (not shown).
  • the first voltage dividing capacitor is formed by overlapping the voltage dividing electrode 2 and the driving scanning line 11.
  • the driving scan lines 11 of the pixel units of each row are scanned line by line, so that at any time, only one of the driving scanning lines 11 is at a high potential, and any one of the driving scanning lines 11 is at a high potential for a very short time, that is, any one.
  • the drive scan line 11 is almost always at a low potential. Therefore, the first voltage-dividing capacitor formed by the voltage-dividing electrode 2 and the driving scan line 11 can also perform a good voltage division effect on the sub-pixel electrode, so that the brightness of the sub-pixel region is slightly lower than that of the main pixel region.
  • the deflection angles of the liquid crystal molecules in the main pixel region and the sub-pixel region are made different, thereby improving the large-view character bias phenomenon of the VA type liquid crystal display.
  • the pixel unit further includes a common electrode line (Com) 3, a data line (Data) 4, a first transistor T1, a second transistor T2, and a third transistor T3.
  • the gate of T1 is connected to drive the scan line 11, the source is connected to the data line 4, and the drain is connected to the main pixel electrode.
  • a main storage capacitor Cst1 is formed between the main pixel electrode and the common electrode line 3, and the main pixel electrode
  • a main liquid crystal capacitor Clc1 is formed between the common electrode on the color filter substrate.
  • the gate of T2 is connected to drive the scan line 11, the source is connected to the data line 4, and the drain is connected to the sub-pixel electrode.
  • a secondary storage capacitor Cst2 is formed between the sub-pixel electrode and the common electrode line 3
  • a sub-liquid crystal capacitor Clc2 is formed between the sub-pixel electrode and the common electrode on the color filter substrate.
  • the gate of T3 is connected to the divided scan line 12, the source is connected to the sub-pixel electrode, and the drain is connected to the divided electrode 2.
  • a first voltage dividing capacitor is formed between the voltage dividing electrode 2 and the driving scan line 11.
  • the driving scan line 11, the divided scanning line 12, and the common electrode line 3 are located in the same layer, and the voltage dividing electrode 2 and the data line 4 are located in the same layer.
  • the driving scan line 11, the divided scanning line 12, and the common electrode line 3 may be simultaneously formed in the same patterning process, and the voltage dividing electrode 2 and the data line 4 may also be in the same patterning process. Synchronized to simplify the manufacturing process of the array substrate. Since the source and drain of T1, T2, and T3 are also in the same layer as the data line, as a further preferred solution, the drain and voltage dividing electrodes of T3 may be of a unitary structure.
  • the driving scan line 11 is first turned on, the divided voltage scanning line 12 is turned off, T1 and T2 are turned on, T3 is turned off, and the main pixel electrode and the sub-pixel electrode are respectively charged by the data line 4 through T1 and T2, respectively.
  • the data voltage is such that Clc1, Cst1, Clc2, and Cst2 have equal voltages.
  • the driving scan line 11 is turned off, the voltage dividing scanning line 12 is turned on, T1 and T2 are turned off, T3 is turned on, Cdown1 divides the sub-pixel electrode by T3, and the data voltage on the sub-pixel electrode is lowered, so that Clc2 and Cst2 are made.
  • the voltage is reduced while the voltages of Clc1 and Cst1 remain unchanged.
  • the voltage of Clc2 is lower than the voltage of Clc1, so that the brightness of the sub-pixel region is slightly lower than that of the main pixel region, and the deflection angles of the liquid crystal molecules in the main pixel region and the sub-pixel region are different, thereby improving the large size of the VA liquid crystal display. See the role of the phenomenon.
  • the first voltage dividing capacitor in the pixel unit is formed by overlapping the voltage dividing electrode 2 and the driving scan line 11, instead of being formed by overlapping the voltage dividing electrode 2 and the common electrode line 3.
  • the area of the common electrode line 3 in the pixel unit can be reduced, and the area of the driving scan line 11 does not need to be increased, thereby increasing the aperture ratio of the pixel unit, and improving the aperture ratio of the pixel unit in the prior art.
  • the pixel unit may further include a second voltage dividing capacitor Cdown2.
  • the second voltage dividing capacitor is formed by overlapping the voltage dividing electrode 2 and the common electrode line 3.
  • the area of the common electrode line 3 for forming the second voltage dividing capacitor is also small, and the area of the common electrode line 3 is still significantly reduced as compared with the prior art, thereby increasing the aperture ratio of the pixel unit.
  • the technical problem that the voltage dividing capacitor affects the aperture ratio of the pixel unit in the prior art is improved.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the embodiment of the invention provides an array substrate, which can be applied to a VA type liquid crystal display, and the array substrate includes a plurality of pixel units.
  • the pixel unit includes a main pixel region 100, a sub-pixel region 200, a first voltage dividing capacitor Cdown1, a driving scan line (Gate1) 11, and a divided scanning line (Gate2) 12.
  • the main pixel region 100 is provided with a main pixel electrode (not shown), and the sub-pixel region 200 is provided with a sub-pixel electrode (not shown).
  • the first voltage dividing capacitor is formed by overlapping the voltage dividing electrode 2 and the voltage dividing scanning line 12.
  • the divided scan lines 12 of the pixel units of each row are scanned line by line, so that at any time, only one divided scan line 12 is at a high potential, and any one of the divided scan lines 12 is at a high potential for a very short time. That is, any one of the divided scanning lines 12 is almost always at a low potential. Therefore, the first voltage dividing capacitor formed by the voltage dividing electrode 2 and the voltage dividing scanning line 12 can also perform a good voltage dividing effect on the sub-pixel electrode, so that the brightness of the sub-pixel region is slightly lower than the main pixel region. At the same time, the deflection angles of the liquid crystal molecules in the main pixel region and the sub-pixel region are different, thereby improving the large-view character bias phenomenon of the VA liquid crystal display.
  • the pixel unit further includes a common electrode line (Com) 3, a data line (Data) 4, a first transistor T1, a second transistor T2, and a third transistor T3.
  • the gate of T1 is connected to drive the scan line 11, the source is connected to the data line 4, and the drain is connected to the main pixel electrode.
  • a main storage capacitor Cst1 is formed between the main pixel electrode and the common electrode line 3
  • a main liquid crystal capacitor Clc1 is formed between the main pixel electrode and the common electrode on the color filter substrate.
  • the gate of T2 is connected to drive the scan line 11, the source is connected to the data line 4, and the drain is connected to the sub-pixel electrode.
  • a secondary storage capacitor Cst2 is formed between the sub-pixel electrode and the common electrode line 3
  • a sub-liquid crystal capacitor Clc2 is formed between the sub-pixel electrode and the common electrode on the color filter substrate.
  • the gate of T3 is connected to the divided scan line 12, the source is connected to the sub-pixel electrode, and the drain is connected to the divided electrode 2.
  • a first voltage dividing capacitor is formed between the voltage dividing electrode 2 and the voltage dividing scanning line 12.
  • the driving scan line 11, the divided scanning line 12, and the common electrode line 3 are located in the same layer, and the voltage dividing electrode 2 and the data line 4 are located in the same layer.
  • the driving scan line 11, the divided scanning line 12, and the common electrode line 3 may be simultaneously formed in the same patterning process, and the voltage dividing electrode 2 and the data line 4 may also be in the same patterning process. Synchronized to simplify the manufacturing process of the array substrate. Since the source and drain of T1, T2, and T3 are also in the same layer as the data line, as a further preferred solution, the drain and voltage dividing electrodes of T3 may be of a unitary structure.
  • the driving scan line 11 is first turned on, the divided voltage scanning line 12 is turned off, T1 and T2 are turned on, T3 is turned off, and the main pixel electrode and the sub-pixel electrode are respectively charged by the data line 4 through T1 and T2, respectively.
  • the data voltage is such that Clc1, Cst1, Clc2, and Cst2 have equal voltages.
  • Trace 12 turn T1 and T2 off, T3 turn on, Cdown1 will divide the sub-pixel electrode by T3, reduce the data voltage on the sub-pixel electrode, reduce the voltage of Clc2 and Cst2, and the voltage of Clc1 and Cst1 constant.
  • the voltage of Clc2 is lower than the voltage of Clc1, so that the brightness of the sub-pixel region is slightly lower than that of the main pixel region, and the deflection angles of the liquid crystal molecules in the main pixel region and the sub-pixel region are different, thereby improving the large size of the VA liquid crystal display. See the role of the phenomenon.
  • the first voltage dividing capacitor in the pixel unit is formed by overlapping the voltage dividing electrode 2 and the voltage dividing scanning line 12, instead of being formed by overlapping the voltage dividing electrode 2 and the common electrode line 3.
  • the area of the common electrode line 3 in the pixel unit can be reduced, and the area of the divided scan line 12 does not need to be increased, thereby increasing the aperture ratio of the pixel unit, and improving the opening of the pixel unit in the prior art. Rate of technical issues.
  • the pixel unit may further include a second voltage dividing capacitor Cdown2.
  • the second voltage dividing capacitor is formed by overlapping the voltage dividing electrode 2 and the common electrode line 3.
  • the area of the common electrode line 3 for forming the second voltage dividing capacitor is also small, and the area of the common electrode line 3 is still significantly reduced as compared with the prior art, thereby increasing the aperture ratio of the pixel unit.
  • the technical problem that the voltage dividing capacitor affects the aperture ratio of the pixel unit in the prior art is improved.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • the embodiment of the invention provides a display device, which is preferably a VA type display device, and specifically may be a liquid crystal television, a liquid crystal display, a mobile phone, a tablet computer or the like.
  • the display device includes a color filter substrate and the array substrate provided by the above embodiments of the present invention.
  • the display device provided by the embodiment of the invention has the same technical features as the array substrate provided in the first embodiment and the second embodiment, so that the same technical problem can be solved and the same technical effect can be achieved.

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Abstract

一种阵列基板及显示装置。阵列基板包括若干像素单元，像素单元包括主像素区域（100）、次像素区域（200）、第一分压电容、驱动扫描线（11）和分压扫描线（12），第一分压电容由分压电极（2）与驱动扫描线（11）重叠形成或由分压电极（2）与分压扫描线（12）重叠形成，解决了现有技术中分压电极影响像素开口率的技术问题。

Description

阵列基板及显示装置
本申请要求享有2014年12月26日提交的名称为“阵列基板及显示装置”的中国专利申请CN201410834652.5的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板及显示装置。
背景技术
随着显示技术的发展，液晶显示器已经成为最为常见的显示装置。
垂直排列(Vertical Alignment，简称VA)型液晶显示器是一种常见的液晶显示器。目前，为了改善VA型液晶显示器的大视角色偏现象，会将每个像素单元分为主像素区域和次像素区域，再增设分压电容。
如图1和图2所示，分压电容Cdown由公共电极线(Com)3的一部分与分压电极2重叠形成。在显示过程中，先利用驱动扫描线(Gate1)11打开第一晶体管T1和第二晶体管T2，由数据线(Data)4向主像素区域100中的主像素电极(图中未示出)和次像素区域200中的次像素电极(图中未示出)充入相同的电位。然后利用分压扫描线(Gate2)12打开第三晶体管T3，利用分压电容对次像素电极进行分压，使次像素电极的电位低于主像素电极。这样会使次像素区域200的亮度略低于主像素区域100，同时主像素区域100与次像素区域200中液晶分子的偏转角度也不同，从而改善了VA型液晶显示器的大视角色偏现象。
但是，由于公共电极线3和分压电极2都是由金属材料制成，因此分压电容会影响像素单元的开口率。特别是在当前分辨率越来越高，像素单元的面积越来越小的发展趋势下，现有的分压电容对开口率的影响更加明显。
发明内容
本发明的目的在于提供一种阵列基板及显示装置，以改善现有技术中分压电容影响像素单元的开口率的技术问题。
本发明提供一种阵列基板，包括若干个像素单元，所述像素单元包括主像素区域、次 像素区域、第一分压电容、驱动扫描线和分压扫描线；
所述第一分压电容由分压电极与所述驱动扫描线重叠形成，或由分压电极与所述分压扫描线重叠形成。
进一步的是，所述像素单元中还包括第二分压电容和公共电极线；
所述第二分压电容由所述分压电极与所述公共电极线重叠形成。
优选的是，所述驱动扫描线、所述分压扫描线、所述公共电极线位于同一图层。
进一步的是，所述像素单元中还包括数据线，所述分压电极与所述数据线位于同一图层。
进一步的是，所述像素单元中还设置有第一晶体管、第二晶体管和第三晶体管；
所述第一晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述主像素区域中的主像素电极；
所述第二晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述次像素区域中的次像素电极；
所述第三晶体管的栅极连接所述分压扫描线，源极连接所述次像素电极，漏极连接所述分压电极。
优选的是，所述第三晶体管的漏极和所述分压电极为一体式结构。
本发明还提供一种显示装置，包括彩膜基板和上述的阵列基板。
优选的是，所述显示装置为垂直排列型显示装置。
本发明带来了以下有益效果：本发明提供的阵列基板中，像素单元中的第一分压电容由分压电极与驱动扫描线重叠形成，或由分压电极与分压扫描线重叠形成，而不是由分压电极与公共电极线重叠形成。这样能够减小像素单元中公共电极线的面积，同时也不需要增加驱动扫描线和分压扫描线的面积，从而提高了像素单元的开口率，改善了现有技术中分压电容影响像素单元的开口率的技术问题。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是现有的阵列基板中像素单元的示意图；
图2是现有的阵列基板中像素单元的电路图；
图3是本发明实施例一提供的阵列基板中像素单元的示意图；
图4是本发明实施例一提供的阵列基板中像素单元的电路图；
图5是本发明实施例一提供的阵列基板中像素单元的另一实施方式的示意图；
图6是本发明实施例一提供的阵列基板中像素单元的另一实施方式的电路图；
图7是本发明实施例二提供的阵列基板中像素单元的示意图；
图8是本发明实施例二提供的阵列基板中像素单元的电路图；
图9是本发明实施例二提供的阵列基板中像素单元的另一实施方式的示意图；
图10是本发明实施例二提供的阵列基板中像素单元的另一实施方式的电路图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
实施例一：
本发明实施例提供一种阵列基板，可应用于VA型液晶显示器中，该阵列基板中包括若干个像素单元。如图3和图4所示，像素单元包括主像素区域100、次像素区域200、第一分压电容Cdown1、驱动扫描线(Gate1)11和分压扫描线(Gate2)12。主像素区域100设置有主像素电极(图中未示出)，次像素区域200设置有次像素电极(图中未示出)。
本实施例中，第一分压电容由分压电极2与驱动扫描线11重叠形成。在显示过程中，各行像素单元的驱动扫描线11逐行扫描，所以在任意时刻，只有一条驱动扫描线11处于高电位，且任意一条驱动扫描线11处于高电位的时间非常短，即任意一条驱动扫描线11几乎一直处于低电位。因此，由分压电极2与驱动扫描线11重叠形成的第一分压电容，也能够对次像素电极起到很好的分压作用，使次像素区域的亮度略低于主像素区域，同时使主像素区域与次像素区域中液晶分子的偏转角度不同，从而改善VA型液晶显示器的大视角色偏现象。
本实施例中，像素单元中还包括公共电极线(Com)3、数据线(Data)4、第一晶体管T1、第二晶体管T2和第三晶体管T3。
其中，T1的栅极连接驱动扫描线11，源极连接数据线4，漏极连接主像素电极。在主像素区域100中，主像素电极与公共电极线3之间形成主存储电容Cst1，主像素电极 与彩膜基板上的公共电极之间形成主液晶电容Clc1。
T2的栅极连接驱动扫描线11，源极连接数据线4，漏极连接次像素电极。在次像素区域200中，次像素电极与公共电极线3之间形成次存储电容Cst2，次像素电极与彩膜基板上的公共电极之间形成次液晶电容Clc2。
T3的栅极连接分压扫描线12，源极连接次像素电极，漏极连接分压电极2。分压电极2与驱动扫描线11之间形成第一分压电容。
作为一个优选方案，驱动扫描线11、分压扫描线12、公共电极线3位于同一图层，并且分压电极2与数据线4位于同一图层。在阵列基板的制造过程中，驱动扫描线11、分压扫描线12、公共电极线3可以在同一次构图工艺中同步制成，分压电极2和数据线4也可以在同一次构图工艺中同步制成，从而简化阵列基板的制造过程。因为T1、T2、T3的源极和漏极也都与数据线位于同一图层，所以作为进一步的优选方案，T3的漏极和分压电极可以为一体式结构。
在显示过程中，先打开驱动扫描线11，关闭分压扫描线12，使T1和T2导通，T3关闭，同时由数据线4通过T1和T2分别向主像素电极和次像素电极充入相等的数据电压，使Clc1、Cst1、Clc2和Cst2具有相等的电压。然后关闭驱动扫描线11，打开分压扫描线12，使T1和T2关闭，T3导通，Cdown1就会通过T3对次像素电极进行分压，降低次像素电极上的数据电压，使Clc2和Cst2的电压降低，而Clc1和Cst1的电压保持不变。此时，Clc2的电压低于Clc1的电压，使次像素区域的亮度略低于主像素区域，同时使主像素区域与次像素区域中液晶分子的偏转角度不同，从而改善VA型液晶显示器的大视角色偏现象。
本发明实施例提供的阵列基板中，像素单元中的第一分压电容由分压电极2与驱动扫描线11重叠形成，而不是由分压电极2与公共电极线3重叠形成。这样能够减小像素单元中公共电极线3的面积，同时也不需要增加驱动扫描线11的面积，从而提高了像素单元的开口率，改善了现有技术中分压电容影响像素单元的开口率的技术问题。
在另一种实施方式中，像素单元中还可以包括第二分压电容Cdown2，如图5和图6所示，第二分压电容由分压电极2与公共电极线3重叠形成。由第一分压电容和第二分压电容共同对次像素电极进行分压，能够进一步降低次像素电极上的电压，从而在更大程度上改善VA型液晶显示器的大视角色偏现象。
当然，用于形成该第二分压电容的公共电极线3的面积也很小，相比于现有技术，仍然显著减小了公共电极线3的面积，从而提高了像素单元的开口率，改善了现有技术中分压电容影响像素单元的开口率的技术问题。
实施例二：
本发明实施例提供一种阵列基板，可应用于VA型液晶显示器中，该阵列基板中包括若干个像素单元。如图7和图8所示，像素单元包括主像素区域100、次像素区域200、第一分压电容Cdown1、驱动扫描线(Gate1)11和分压扫描线(Gate2)12。主像素区域100设置有主像素电极(图中未示出)，次像素区域200设置有次像素电极(图中未示出)。
本实施例中，第一分压电容由分压电极2与分压扫描线12重叠形成。在显示过程中，各行像素单元的分压扫描线12逐行扫描，所以在任意时刻，只有一条分压扫描线12处于高电位，且任意一条分压扫描线12处于高电位的时间非常短，即任意一条分压扫描线12几乎一直处于低电位。因此，由分压电极2与分压扫描线12重叠形成的第一分压电容，也能够对次像素电极起到很好的分压作用，使次像素区域的亮度略低于主像素区域，同时使主像素区域与次像素区域中液晶分子的偏转角度不同，从而改善VA型液晶显示器的大视角色偏现象。
本实施例中，像素单元中还包括公共电极线(Com)3、数据线(Data)4、第一晶体管T1、第二晶体管T2和第三晶体管T3。
其中，T1的栅极连接驱动扫描线11，源极连接数据线4，漏极连接主像素电极。在主像素区域100中，主像素电极与公共电极线3之间形成主存储电容Cst1，主像素电极与彩膜基板上的公共电极之间形成主液晶电容Clc1。
T2的栅极连接驱动扫描线11，源极连接数据线4，漏极连接次像素电极。在次像素区域200中，次像素电极与公共电极线3之间形成次存储电容Cst2，次像素电极与彩膜基板上的公共电极之间形成次液晶电容Clc2。
T3的栅极连接分压扫描线12，源极连接次像素电极，漏极连接分压电极2。分压电极2与分压扫描线12之间形成第一分压电容。
作为一个优选方案，驱动扫描线11、分压扫描线12、公共电极线3位于同一图层，并且分压电极2与数据线4位于同一图层。在阵列基板的制造过程中，驱动扫描线11、分压扫描线12、公共电极线3可以在同一次构图工艺中同步制成，分压电极2和数据线4也可以在同一次构图工艺中同步制成，从而简化阵列基板的制造过程。因为T1、T2、T3的源极和漏极也都与数据线位于同一图层，所以作为进一步的优选方案，T3的漏极和分压电极可以为一体式结构。
在显示过程中，先打开驱动扫描线11，关闭分压扫描线12，使T1和T2导通，T3关闭，同时由数据线4通过T1和T2分别向主像素电极和次像素电极充入相等的数据电压，使Clc1、Cst1、Clc2和Cst2具有相等的电压。然后关闭驱动扫描线11，打开分压扫 描线12，使T1和T2关闭，T3导通，Cdown1就会通过T3对次像素电极进行分压，降低次像素电极上的数据电压，使Clc2和Cst2的电压降低，而Clc1和Cst1的电压保持不变。此时，Clc2的电压低于Clc1的电压，使次像素区域的亮度略低于主像素区域，同时使主像素区域与次像素区域中液晶分子的偏转角度不同，从而改善VA型液晶显示器的大视角色偏现象。
本发明实施例提供的阵列基板中，像素单元中的第一分压电容由分压电极2与分压扫描线12重叠形成，而不是由分压电极2与公共电极线3重叠形成。这样能够减小像素单元中公共电极线3的面积，同时也不需要增加分压扫描线12的面积，从而提高了像素单元的开口率，改善了现有技术中分压电容影响像素单元的开口率的技术问题。
在另一种实施方式中，像素单元中还可以包括第二分压电容Cdown2，如图9和图10所示，第二分压电容由分压电极2与公共电极线3重叠形成。由第一分压电容和第二分压电容共同对次像素电极进行分压，能够进一步降低次像素电极上的电压，从而在更大程度上改善VA型液晶显示器的大视角色偏现象。
当然，用于形成该第二分压电容的公共电极线3的面积也很小，相比于现有技术，仍然显著减小了公共电极线3的面积，从而提高了像素单元的开口率，改善了现有技术中分压电容影响像素单元的开口率的技术问题。
实施例三：
本发明实施例提供一种显示装置，优选为VA型显示装置，具体可以是液晶电视、液晶显示器、手机、平板电脑等。该显示装置包括彩膜基板和上述本发明实施例提供的阵列基板。
本发明实施例提供的显示装置，与上述实施例一、实施例二提供的阵列基板具有相同的技术特征，所以也能解决相同的技术问题，达到相同的技术效果。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (13)

  1. 一种阵列基板，包括若干个像素单元，所述像素单元包括主像素区域、次像素区域、第一分压电容、驱动扫描线和分压扫描线；
    所述第一分压电容由分压电极与所述驱动扫描线重叠形成，或由分压电极与所述分压扫描线重叠形成。
  2. 根据权利要求1所述的阵列基板，其中，所述像素单元中还包括第二分压电容和公共电极线；
    所述第二分压电容由所述分压电极与所述公共电极线重叠形成。
  3. 根据权利要求2所述的阵列基板，其中，所述驱动扫描线、所述分压扫描线、所述公共电极线位于同一图层。
  4. 根据权利要求1所述的阵列基板，其中，所述像素单元中还包括数据线，所述分压电极与所述数据线位于同一图层。
  5. 根据权利要求4所述的阵列基板，其中，所述像素单元中还设置有第一晶体管、第二晶体管和第三晶体管；
    所述第一晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述主像素区域中的主像素电极；
    所述第二晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述次像素区域中的次像素电极；
    所述第三晶体管的栅极连接所述分压扫描线，源极连接所述次像素电极，漏极连接所述分压电极。
  6. 根据权利要求5所述的阵列基板，其中，所述第三晶体管的漏极和所述分压电极为一体式结构。
  7. 一种显示装置，包括彩膜基板和阵列基板；
    所述阵列基板包括若干个像素单元，所述像素单元包括主像素区域、次像素区域、第一分压电容、驱动扫描线和分压扫描线；
    所述第一分压电容由分压电极与所述驱动扫描线重叠形成，或由分压电极与所述分压扫描线重叠形成。
  8. 根据权利要求7所述的显示装置，其中，所述像素单元中还包括第二分压电容和公共电极线；
    所述第二分压电容由所述分压电极与所述公共电极线重叠形成。
  9. 根据权利要求8所述的显示装置，其中，所述驱动扫描线、所述分压扫描线、所 述公共电极线位于同一图层。
  10. 根据权利要求7所述的显示装置，其中，所述像素单元中还包括数据线，所述分压电极与所述数据线位于同一图层。
  11. 根据权利要求10所述的显示装置，其中，所述像素单元中还设置有第一晶体管、第二晶体管和第三晶体管；
    所述第一晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述主像素区域中的主像素电极；
    所述第二晶体管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述次像素区域中的次像素电极；
    所述第三晶体管的栅极连接所述分压扫描线，源极连接所述次像素电极，漏极连接所述分压电极。
  12. 根据权利要求11所述的显示装置，其中，所述第三晶体管的漏极和所述分压电极为一体式结构。
  13. 如权利要求7所述的显示装置，其中，所述显示装置为垂直排列型显示装置。
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