WO2016101341A1 - 具有触控功能的显示面板及其制造方法和复合电极 - Google Patents

具有触控功能的显示面板及其制造方法和复合电极 Download PDF

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Publication number
WO2016101341A1
WO2016101341A1 PCT/CN2015/070100 CN2015070100W WO2016101341A1 WO 2016101341 A1 WO2016101341 A1 WO 2016101341A1 CN 2015070100 W CN2015070100 W CN 2015070100W WO 2016101341 A1 WO2016101341 A1 WO 2016101341A1
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Prior art keywords
electrode
metal
display panel
layer
pattern
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Ceased
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PCT/CN2015/070100
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English (en)
French (fr)
Inventor
虞晓江
占伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/433,658 priority Critical patent/US9720545B2/en
Publication of WO2016101341A1 publication Critical patent/WO2016101341A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
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    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel having a touch function, a manufacturing method thereof, and a composite electrode.
  • the display panel of the present invention generally forms a touch panel on the display panel by in-cell or on-cell technology to form a touch function.
  • the display panel wherein the in-cell technology refers to a method of embedding the touch panel function into the liquid crystal pixel, and the on-cell technology refers to a method of embedding the touch panel function between the color filter substrate and the polarizing plate.
  • the electrodes connecting the touch component and the display component need to be closely adjacent to each other, so the distance between the electrodes is small, and a short circuit is easily formed, which affects the manufacture of the display panel with the touch function. Yield and cost.
  • the invention provides a display panel with a touch function to solve the above problems.
  • the present invention provides a display panel having a touch function, the display panel including a composite electrode, wherein the composite electrode includes a metal electrode and a metal oxide layer disposed on a surface of the metal electrode.
  • the metal oxide layer is formed by oxidizing a metal electrode.
  • the metal oxide layer is formed by oxidizing the metal electrode by ultraviolet-ozone or oxygen plasma.
  • the metal electrode comprises a single layer or at least two metal layers or metal alloy layers.
  • the metal oxide layer is used to electrically isolate the metal electrode from the surrounding conductive elements.
  • the composite electrode is a touch electrode of the display panel.
  • the display panel further includes a substrate, a semiconductor pattern disposed on the substrate, a gate insulating layer and an interlayer insulating layer covering the semiconductor pattern and the substrate, a source/drain pattern disposed on the interlayer insulating layer, and an overlay a planarization layer on the source/drain pattern and the interlayer insulating layer, a common electrode pattern disposed on the planarization layer, a passivation layer overlying the common electrode pattern and the planarization layer, and being disposed on the passivation layer a pixel electrode pattern, the touch electrode is disposed on the passivation layer and spaced apart from the pixel electrode pattern, wherein the first contact hole is disposed on the planarization layer and the passivation layer, and the pixel electrode pattern passes through the first contact hole and the source/
  • the drain pattern is electrically connected, the gate insulating layer and the interlayer insulating layer are provided with a second contact hole, and the source/drain pattern is electrically connected to the semiconductor pattern via the second contact hole.
  • the present invention also provides a method of manufacturing a display panel having a touch function, comprising: forming a metal electrode; oxidizing the metal electrode to form a metal oxide layer disposed on a surface of the metal electrode.
  • the step of oxidizing the metal electrode comprises: oxidizing the metal electrode by ultraviolet-ozone or oxygen plasma.
  • the present invention also provides a composite electrode for a display panel or a touch panel, wherein the composite electrode includes a metal electrode and a metal oxide layer disposed on a surface of the metal electrode.
  • the metal oxide layer is formed by oxidizing a metal electrode.
  • the metal oxide layer is formed by oxidizing the metal electrode by ultraviolet-ozone or oxygen plasma.
  • the metal electrode comprises a single layer or at least two metal layers or metal alloy layers.
  • the metal oxide layer is used to electrically isolate the metal electrode from the surrounding conductive elements.
  • the present invention has the beneficial effects that the display panel with touch function disclosed in the present invention includes a composite electrode including a metal electrode and a metal oxide disposed on the surface of the metal electrode. Therefore, the display panel with the touch function of the present invention can prevent the electrode from forming a short circuit with the peripheral circuit, improve the yield of the display panel with the touch function, and reduce the cost.
  • FIG. 1 is a schematic structural view of a display panel with a touch function according to the present invention
  • FIG. 2 is a schematic view showing a manufacturing process of a display panel with a touch function according to the present invention
  • FIG. 3 is a process flow diagram of a composite electrode for fabricating a display panel having a touch function according to the present invention.
  • FIG. 1 is a schematic structural view of a display panel with a touch function according to the present invention. As shown in FIG.
  • the display panel 1 with touch function of the present invention includes a substrate 11 , a semiconductor pattern 12 disposed on the substrate 11 , a gate insulating layer 13 covering the semiconductor pattern 12 and the substrate 11 , and an interlayer insulating layer 14 .
  • a source/drain pattern 15 disposed on the interlayer insulating layer 14, a planarization layer 16 overlying the source/drain pattern 15 and the interlayer insulating layer 14, and a common electrode disposed on the planarization layer 16.
  • the pattern 17, the passivation layer 18 covering the common electrode pattern 17 and the planarization layer 16, the pixel electrode pattern 19 disposed on the passivation layer 18, and the composite electrode 20 is disposed on the passivation layer 18 and spaced apart from the pixel electrode pattern 19.
  • planarization layer 16 and the passivation layer 18 are provided with a first contact hole 21, and the pixel electrode pattern 19 is electrically connected to the source/drain pattern 15 via the first contact hole 21, the gate insulating layer 13 and the interlayer A second contact hole 22 is disposed on the insulating layer 14.
  • the source/drain pattern 15 is electrically connected to the semiconductor pattern 12 via the second contact hole 22.
  • the substrate 11 is further provided with a buffer layer 23.
  • the display panel 1 having a touch function is an LTPS (Low) manufactured by in-cell technology. Temperature Poly-silicon, low-temperature polysilicon) liquid crystal display panel, which is characterized by ultra-thin, light weight, low power consumption, clearer images and more brilliant colors.
  • the substrate 11 is usually a glass substrate and a buffer layer (Butter)
  • the layer 23 is formed on the substrate 11 by a PECVD process and covers the entire substrate 11.
  • the buffer layer 23 can reduce leakage current.
  • the preferred semiconductor pattern 12 is disposed on the buffer layer 23 of the substrate 11.
  • Gate insulation (Gate The insulator 13 is usually formed by depositing a TEOS, SiNx or SiH4 oxide layer on the substrate 11 by a PECVD process.
  • the gate insulating layer 13 is further covered with an interlayer insulating layer 14 disposed on the interlayer insulating layer 14 and spaced apart from the gate insulating layer 13, wherein the gate insulating layer 13
  • a second contact hole 22 is disposed on the interlayer insulating layer 14 to electrically connect the source/drain in the source/drain pattern 15 to the semiconductor pattern 12 through the second contact hole 22.
  • the planarization layer 16 covers the source/drain pattern 15 and the entire interlayer insulating layer 14, which is an organic flat layer, and the planarization layer 16 can improve liquid crystal efficiency.
  • the common electrode pattern 17 is disposed on the planarization layer 16, the passivation layer 18 covers the common electrode pattern 17 and the entire planarization layer 16, and the pixel electrode pattern 19 and the composite electrode 20 are both disposed on the passivation layer 18, and the composite electrode 20 is
  • the pixel electrode patterns 19 are spaced apart; the first contact holes 21 are disposed on the passivation layer 18 and the planarization layer 16, so that the pixel electrode patterns 19 are electrically connected to the source/drain patterns 15 through the first contact holes 21 due to the source/
  • the drain pattern 15 and the semiconductor pattern 12 are electrically connected through the second contact hole 22, and therefore, the pixel electrode pattern 19 and the semiconductor pattern 12 are also electrically connected, so that the entire display panel 1 having the touch function is electrically connected.
  • the composite electrode 20 of the present embodiment is a touch electrode, and includes a metal electrode 201 and a metal oxide layer 202 disposed on a surface of the metal electrode.
  • the metal oxide layer 202 is formed by oxidizing the metal electrode 201.
  • the treatment is to form a metal oxide layer 202 by oxidizing the metal electrode 201 by ultraviolet-ozone or oxygen plasma, and the metal oxide layer 202 is used to electrically isolate the metal electrode 201 from the surrounding conductive elements to avoid the metal electrode.
  • a short circuit is formed between 201 and the other electrodes.
  • the composite electrode 20 is electrically isolated from the pixel electrode pattern 19, and is also electrically isolated from other circuits in the periphery to avoid short circuit with the peripheral circuits.
  • the metal electrode 201 may be a single metal layer (such as Al), or may be at least two metal layers (such as Al/Ti double layer metal) or a metal alloy layer (such as Al-Ti alloy).
  • the composite electrode 20 includes a metal electrode 201 and a metal oxide layer 202 disposed on a surface of the metal electrode 201.
  • the display panel 1 with touch function of the present embodiment includes a composite electrode 20, and the composite electrode 20 includes a metal electrode 201 and a metal oxide layer 202 disposed on the surface of the metal electrode 201, thereby making the composite electrode 20 is electrically isolated from the surrounding conductive elements to avoid short circuit with the peripheral conductive elements, thereby improving the yield of the display panel 1 having the touch function.
  • FIG. 2 is a schematic diagram of a manufacturing process of a display panel with a touch function according to the present invention
  • FIG. 3 is a process flow diagram of a composite electrode of the display panel with a touch function according to the present invention.
  • the manufacturing process of the display panel 1 with touch function disclosed in this embodiment includes:
  • a metal electrode 201 is formed.
  • the metal electrode 201 is made of a single metal layer or at least two metal layers such as a metal layer or a metal alloy layer.
  • a semiconductor pattern 12 is formed on the substrate 11 of the display panel 1 having a touch function, and then a gate insulating layer 13 and an interlayer insulating layer 14 covering the semiconductor pattern 12 and the substrate 11 are formed, wherein the layer The interlayer insulating layer 14 is disposed on the gate insulating layer 13, and then the source/drain pattern 15 is disposed on the interlayer insulating layer 14, and a planarization layer covering the source/drain pattern 15 and the interlayer insulating layer 14 is formed. 16.
  • a common electrode pattern 17 is provided on the planarization layer 16, a passivation layer 18 covering the common electrode pattern 17 and the planarization layer 16 is formed, and a pixel electrode pattern 19 is provided on the passivation layer 18.
  • a buffer layer 23 is further provided on the substrate 11, and a preferred semiconductor pattern 12 is formed on the buffer layer 23.
  • a first contact hole 21 is disposed on the planarization layer 16 and the passivation layer 18 to electrically connect the pixel electrode pattern 19 to the source/drain pattern 15 via the first contact hole 21; and in the gate insulating layer 13 and The interlayer insulating layer 14 is provided with a second contact hole 22 for electrically connecting the source/drain pattern 15 to the semiconductor pattern 12 via the second contact hole 22, thereby electrically connecting the respective layers of the entire display panel 1.
  • the metal electrode 201 is formed on the passivation layer 18, and the metal electrode 201 is spaced apart from the pixel electrode pattern 19.
  • the metal electrodes 201 are closely and largely arranged on the same layer, and the metal electrodes 201 are spaced apart from the pixel electrode patterns 19, and the distance is usually smaller than Or equal to 5um.
  • the metal electrode 201 is oxidized to form a metal oxide layer 202 provided on the surface of the metal electrode 201.
  • the metal electrode 201 is spaced apart from the pixel electrode pattern 19 and the distance is small, a short circuit is easily formed. Therefore, in the present embodiment, the metal electrode 201 is subjected to ultraviolet-ozone or oxygen plasma. (O2 Plasma) is oxidized.
  • O2 Plasma oxygen plasma
  • the metal electrode 201 is oxidized by ultraviolet-ozone, because the energy of the ultraviolet light 24 decomposes the ozone O3 into oxygen O2 and active oxygen atoms (O) under the irradiation of ultraviolet rays 24, and uses active oxygen.
  • the strong oxidation of the atom (O) which can chemically react with the metal electrode, generates a dense and insulating metal oxide layer 202 on the surface of the metal electrode 201, so that the metal oxide layer 202 prevents the metal electrode 201 and the peripheral circuit. A short circuit is formed and corrosion of the metal electrode 201 by moisture and oxygen in the air is prevented.
  • the thickness of the metal oxide layer 202 may be increased to avoid affecting the conductivity of the metal electrode 201.
  • the ultraviolet-ozone treatment does not affect the conductivity of the pixel electrode pattern 19.
  • the metal electrode 201 is oxidized by using an oxygen plasma, in a plasma generated by a method such as coupled plasma (ICP), part of the oxygen molecules are converted into active oxygen atoms (O) having strong oxidation or The ions, thereby oxidizing the surface of the metal electrode 201, form a dense and insulating metal oxide layer 202.
  • ICP coupled plasma
  • the metal electrode 201 is oxidized by ultraviolet-ozone or oxygen plasma to form a dense and insulating metal oxide layer 202 on the surface of the metal electrode 201, thereby preparing a metal electrode 201 and a metal.
  • the composite electrode 20 of the oxide layer 202 is a touch electrode and can be used for a display panel or a touch panel or a display panel with a touch function.
  • the metal oxide layer 202 and the surrounding metal electrode 201 are used.
  • the conductive element is electrically isolated to prevent the electrode from forming a short circuit with the peripheral circuit, thereby improving the yield of the panel.
  • the display panel of the touch function of the present invention includes a composite electrode including a metal electrode and a metal oxide layer disposed on the surface of the metal electrode. Therefore, the present invention can prevent the metal signal from being connected to the peripheral circuit. A short circuit is formed to improve the yield of the display panel with touch function and reduce the cost.

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Abstract

一种具有触控功能的显示面板（1）及其制造方法和复合电极（20），该显示面板（1）包括复合电极（20），其中所述复合电极（20）包括金属电极（201）以及设置于金属电极（201）的表面上的金属氧化物层（202）。通过上述方式，在该复合电极（20）的金属电极（201）表面形成致密且绝缘的金属氧化物层（202），从而防止复合电极（20）同周边电路形成短路，提高具有触控功能的显示面板（1）的良率，并降低成本。

Description

具有触控功能的显示面板及其制造方法和复合电极
【技术领域】
本发明涉及显示技术领域，特别是涉及一种具有触控功能的显示面板及其制造方法和复合电极。
【背景技术】
现今的显示面板为了实现面板的轻薄化，并提高用户的触控及显示体验，一般是通过in-cell或on-cell技术将触控面板制作在显示面板上而形成一种具有触控功能的显示面板，其中in-cell技术是指将触控面板功能嵌入到液晶像素中的方法，on-cell技术是指将触控面板功能嵌入到彩色滤光片基板和偏光板之间的方法。
而在具有触控功能的显示面板内部，连接触控元件及显示元件的电极需要紧密的相邻排布，因此电极之间的距离较小，容易形成短路，影响制造具有触控功能的显示面板的良率及成本。
【发明内容】
本发明提供一种具有触控功能的显示面板，以解决上述问题。
为解决上述问题，本发明提供一种具有触控功能的显示面板，该显示面板包括复合电极，其中复合电极包括金属电极以及设置于金属电极的表面上的金属氧化物层。
其中，金属氧化物层是通过对金属电极进行氧化处理形成。
其中，金属氧化物层是通过紫外线-臭氧或氧气等离子体对金属电极进行氧化处理形成。
其中，金属电极包括单层或至少两层金属层或金属合金层。
其中，金属氧化物层用于将金属电极与周围的导电元件进行电隔离。
其中，复合电极为显示面板的触控电极。
其中，显示面板进一步包括基板、设置于基板上的半导体图案、覆盖于半导体图案以及基板上的栅极绝缘层和层间绝缘层、设置于层间绝缘层上的源极/漏极图案、覆盖于源极/漏极图案和层间绝缘层上的平坦化层、设置于平坦化层上的公共电极图案、覆盖于公共电极图案和平坦化层上的钝化层以及设置于钝化层上的像素电极图案，触控电极设置于钝化层上且与像素电极图案间隔设置，其中平坦化层和钝化层上设置有第一接触孔，像素电极图案经第一接触孔与源极/漏极图案电连接，栅极绝缘层和层间绝缘层上设置有第二接触孔，源极/漏极图案经第二接触孔与半导体图案电连接。
本发明还提供一种具有触控功能的显示面板的制造方法，包括：形成金属电极；对金属电极进行氧化处理，进而形成设置于金属电极的表面上的金属氧化物层。
其中，对金属电极进行氧化处理的步骤包括：通过紫外线-臭氧或氧气等离子体对金属电极进行氧化处理。
为解决上述问题，本发明还提供一种复合电极，用于显示面板或触控面板，其中复合电极包括金属电极以及设置于金属电极的表面上的金属氧化物层。
其中，金属氧化物层是通过对金属电极进行氧化处理形成。
其中，金属氧化物层是通过紫外线-臭氧或氧气等离子体对金属电极进行氧化处理形成。
其中，金属电极包括单层或至少两层金属层或金属合金层。
其中，金属氧化物层用于将金属电极与周围的导电元件进行电隔离。
通过上述方案，本发明的有益效果是：区别于现有技术，本发明揭示的具有触控功能的显示面板包括复合电极，该复合电极包括金属电极及设置于金属电极的表面上的金属氧化物层，因此，本发明的具有触控功能的显示面板可防止电极同周边的电路形成短路，提高具有触控功能的显示面板的良率，降低成本。
【附图说明】
图1是本发明具有触控功能的显示面板的结构示意图；
图2是本发明具有触控功能的显示面板的制造工艺示意图；
图3是本发明制作具有触控功能的显示面板的复合电极的工艺流程图。
【具体实施方式】
下面结合附图和实施方式对本发明进行详细说明。
现今的具有触控功能的显示面板（简称触控显示面板），在触控显示面板的内部，连接触控元件及显示元件的电极需要紧密的相邻排布，电极之间的距离较小，容易形成短路；本发明提出了一种具有触控功能的显示面板，该显示面板包括一种复合电极，该复合电极包括金属电极及设置于金属电极的表面上的金属氧化物层，请参看图1，图1本发明具有触控功能的显示面板的结构示意图。如图1所示，本发明的具有触控功能的显示面板1包括基板11、设置于基板11上的半导体图案12、覆盖半导体图案12以及基板11的栅极绝缘层13和层间绝缘层14、设置于层间绝缘层14上的源极/漏极图案15、覆盖于源极/漏极图案15和层间绝缘层14上的平坦化层16、设置于平坦化层16上的公共电极图案17、覆盖公共电极图案17和平坦化层16上的钝化层18、设置于钝化层18上的像素电极图案19，复合电极20设置于钝化层18上且与像素电极图案19间隔设置，其中平坦化层16和钝化层18上设置有第一接触孔21，像素电极图案19经第一接触孔21与源极/漏极图案15电连接，栅极绝缘层13和层间绝缘层14上设置有第二接触孔22，该源极/漏极图案15经第二接触孔22与半导体图案12电连接，此外，基板11上还设有缓冲层23。
在本实施方式中，具有触控功能的显示面板1为采用in-cell技术制造的LTPS（Low Temperature Poly-silicon，低温多晶硅）液晶显示面板，它具有超薄、重量轻、低电耗、图像更清晰及色彩更绚丽等特点。基板11通常为玻璃基板，缓冲层（Butter layer）23以PECVD工艺形成于基板11上，并覆盖整个基板11，缓冲层23可以降低漏电流，优选的半导体图案12设置在基板11的缓冲层23上。栅极绝缘层（Gate insulator）13通常采用PECVD工艺在基板11沉积TEOS、SiNx或SiH4氧化层形成。并且，栅极绝缘层13上还覆盖有层间绝缘层14，源极/漏极图案15设置于层间绝缘层14上，并和栅极绝缘层13隔开，其中，栅极绝缘层13和层间绝缘层14上设置第二接触孔22，使源极/漏极图案15中的源极/漏极通过第二接触孔22与半导体图案12电连接。
平坦化层16覆盖源极/漏极图案15和整个层间绝缘层14，该平坦化层16为有机平坦层，平坦化层16可提高液晶效率。公共电极图案17设置于平坦化层16上，钝化层18覆盖公共电极图案17和整个平坦化层16，并且像素电极图案19和复合电极20均设置于钝化层18上，复合电极20与像素电极图案19间隔设置；钝化层18和平坦化层16上设置第一接触孔21，使像素电极图案19通过第一接触孔21与源极/漏极图案15电连接，由于源极/漏极图案15与半导体图案12通过第二接触孔22电连接，因此，实现像素电极图案19与半导体图案12也电连接，从而整个具有触控功能的显示面板1电连接。
本实施方式的复合电极20为触控电极，包括金属电极201及设置于金属电极的表面上的金属氧化物层202，该金属氧化物层202是通过对金属电极201进行氧化处理形成，该氧化处理为采用通过紫外线-臭氧或氧气等离子体对金属电极201进行氧化处理形成金属氧化物层202，该金属氧化物层202用于将金属电极201与周围的导电元件进行电隔离，以避免金属电极201与其它电极之间形成短路，这里是指复合电极20与像素电极图案19电隔离，同时也与周边的其他电路电隔离，可避免与周边电路形成短路。其中，该金属电极201可以为单层金属层（如Al），也可以为至少两层金属层(如Al/Ti双层金属)或金属合金层(如Al-Ti合金)。
在这里强调的是，上述实施方式仅是以具有触控功能的显示面板1为例揭示复合电极20的作用，此外，在其他实施方式中，复合电极20还可用于显示面板或触控面板，复合电极20包括金属电极201以及设置于金属电极201的表面上的金属氧化物层202。
区别与现有技术，本实施方式的具有触控功能的显示面板1包括复合电极20，而复合电极20包括金属电极201和设置于金属电极201表面上的金属氧化物层202，从而使复合电极20与周围的导电元件电隔离，避免与周边导电元件形成短路，提高具有触控功能的显示面板1的良率。
结合图1，请参看图2和图3，图2是本发明具有触控功能的显示面板的制造工艺示意图，图3是本发明制作具有触控功能的显示面板的复合电极的工艺流程图。本实施方式揭示的具有触控功能的显示面板1的制造工艺包括：
S11：形成金属电极201。
其中，金属电极201由单层金属层或至少两层金属层或金属合金层等可导体金属材料制成。
在本实施方式中，首先是在具有触控功能的显示面板1的基板11上形成半导体图案12，然后形成覆盖半导体图案12和基板11的栅极绝缘层13和层间绝缘层14，其中层间绝缘层14设置于栅极绝缘层13上，再在层间绝缘层14上设置源极/漏极图案15，并形成覆盖源极/漏极图案15和层间绝缘层14的平坦化层16，在平坦化层16上设置公共电极图案17，形成覆盖公共电极图案17和平坦化层16的钝化层18，在钝化层18上设置像素电极图案19。此外，基板11上还设有缓冲层23，优选的半导体图案12在缓冲层23上形成。并且，平坦化层16和钝化层18上设置第一接触孔21，以使像素电极图案19经第一接触孔21与源极/漏极图案15电连接；并在栅极绝缘层13和层间绝缘层14上设置有第二接触孔22，使源极/漏极图案15经第二接触孔22与半导体图案12电连接，从而使整个显示面板1的各个层之间实现电连接。
在本实施方式中，在钝化层18上形成金属电极201，并使金属电极201与像素电极图案19间隔设置。为了使具有触控功能的显示面板1的具有高分辨率，因此，金属电极201是在同一层面上紧密并且大量排布的，并且金属电极201与像素电极图案19相邻间隔设置，通常距离小于或等于5um。
S12：对金属电极201进行氧化处理，进而形成设置于金属电极201的表面上的金属氧化物层202。
其中，由于金属电极201与像素电极图案19相邻间隔设置，并且距离较小，容易形成短路，因此，本实施方式中，对金属电极201进行通过紫外线-臭氧(UV-ozone)或氧气等离子体(O2 plasma)进行氧化处理。
例如，如图2所示，通过紫外线-臭氧对金属电极201进行氧化处理，是由于在紫外线24照射下，紫外线24的能量将臭氧O3分解成氧气O2和活性氧原子(O)，利用活性氧原子(O)的强烈氧化作用，能与金属电极发生化学反应的原理，在金属电极201的表面上生成致密且绝缘的金属氧化物层202，使金属氧化物层202防止金属电极201与周边电路形成短路，并防止空气中的水汽和氧气对金属电极201的腐蚀。同时，为了避免影响金属电极201的导电性，可以增加金属氧化物层202的厚度以避免影响金属电极201的导电性。并且，由于像素电极图案19通常也为氧化物，因此，紫外线-臭氧处理不会对像素电极图案19的导电性产生影响。
此外，如果是使用氧气等离子体对金属电极201进行氧化处理，则是由耦合等离子体（ICP）等方法产生的等离子体中，部分氧气分子转化为具有强烈氧化作用的活性氧原子(O)或离子，从而使金属电极201的表面发生氧化，生成致密且绝缘的金属氧化物层202。
因此，本实施方式通过紫外线-臭氧或氧气等离子体对金属电极201进行氧化处理，使金属电极201的表面上生成致密且绝缘的金属氧化物层202，从而制备出一种具有金属电极201和金属氧化物层202的复合电极20，该复合电极20为一种触控电极，可用于显示面板或触控面板或具有触控功能的显示面板，利用金属氧化物层202将金属电极201与周围的导电元件进行电隔离，防止电极同周边电路形成短路，提高面板的良率。
综上所述，本发明的触控功能的显示面板包括复合电极，该复合电极包括金属电极及设置于金属电极的表面上的金属氧化物层，因此，本发明可防止金属讯号张同周边电路形成短路，提高具有触控功能的显示面板的良率，降低成本。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (14)

  1. 一种具有触控功能的显示面板，其中，所述显示面板包括复合电极，其中所述复合电极包括金属电极以及设置于所述金属电极的表面上的金属氧化物层。
  2. 根据权利要求1所述的显示面板，其中，所述金属氧化物层是通过对所述金属电极进行氧化处理形成。
  3. 根据权利要求1所述的显示面板，其中，所述金属氧化物层是通过紫外线-臭氧或氧气等离子体对所述金属电极进行氧化处理形成。
  4. 根据权利要求1所述的显示面板，其中，所述金属电极包括单层或至少两层金属层或金属合金层。
  5. 根据权利要求1所述的显示面板，其中，所述金属氧化物层用于将所述金属电极与周围的导电元件进行电隔离。
  6. 根据权利要求1所述的显示面板，其中，所述复合电极为所述显示面板的触控电极。
  7. 根据权利要求6所述的显示面板，其中，所述显示面板进一步包括基板、设置于所述基板上的半导体图案、覆盖于所述半导体图案以及所述基板上的栅极绝缘层和层间绝缘层、设置于所述层间绝缘层上的源极/漏极图案、覆盖于所述源极/漏极图案和所述层间绝缘层上的平坦化层、设置于所述平坦化层上的公共电极图案、覆盖于所述公共电极图案和所述平坦化层上的钝化层以及设置于所述钝化层上的像素电极图案，所述触控电极设置于所述钝化层上且与所述像素电极图案间隔设置，其中所述平坦化层和所述钝化层上设置有第一接触孔，所述像素电极图案经所述第一接触孔与所述源极/漏极图案电连接，所述栅极绝缘层和层间绝缘层上设置有第二接触孔，所述源极/漏极图案经所述第二接触孔与所述半导体图案电连接。
  8. 一种具有触控功能的显示面板的制造方法，其中，所述制造方法包括：
    形成金属电极；
    对所述金属电极进行氧化处理，进而形成设置于所述金属电极的表面上的金属氧化物层。
  9. 根据权利要求8所述的制造方法，其中，所述对所述金属电极进行氧化处理的步骤包括：
    通过紫外线-臭氧或氧气等离子体对所述金属电极进行氧化处理。
  10. 一种复合电极，其中，所述复合电极用于显示面板或触控面板，其中所述复合电极包括金属电极以及设置于所述金属电极的表面上的金属氧化物层。
  11. 根据权利要求10所述的复合电极，其中，所述金属氧化物层是通过对所述金属电极进行氧化处理形成。
  12. 根据权利要求10所述的复合电极，其中，所述金属氧化物层是通过紫外线-臭氧或氧气等离子体对所述金属电极进行氧化处理形成。
  13. 根据权利要求10所述的复合电极，其中，所述金属电极包括单层或至少两层金属层或金属合金层。
  14. 根据权利要求10所述的复合电极，其中，所述金属氧化物层用于将所述金属电极与周围的导电元件进行电隔离。
PCT/CN2015/070100 2014-12-24 2015-01-05 具有触控功能的显示面板及其制造方法和复合电极 Ceased WO2016101341A1 (zh)

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