WO2016088832A1 - 硬化性組成物、硬化性組成物の製造方法及び半導体装置 - Google Patents
硬化性組成物、硬化性組成物の製造方法及び半導体装置 Download PDFInfo
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- WO2016088832A1 WO2016088832A1 PCT/JP2015/084006 JP2015084006W WO2016088832A1 WO 2016088832 A1 WO2016088832 A1 WO 2016088832A1 JP 2015084006 W JP2015084006 W JP 2015084006W WO 2016088832 A1 WO2016088832 A1 WO 2016088832A1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a curable composition suitably used for forming a cured product on the surface of the semiconductor element in order to protect the semiconductor element, and a method for producing the curable composition.
- the present invention also relates to a semiconductor device using the curable composition.
- the electrode of the semiconductor element is electrically connected to, for example, an electrode in another connection target member having the electrode on the surface.
- the semiconductor element and the other connection target member are bonded and bonded by curing the epoxy resin composition. It is fixed.
- positioned between a semiconductor element and another connection object member differs from the material for protecting the surface of a semiconductor element.
- an epoxy resin composition may be used to seal a semiconductor element.
- Patent Document 1 discloses an epoxy resin, a phenolic curing agent, a curing accelerator that is tris (2,6-dimethoxyphenyl) phosphine or tris (2,4,6-trimethoxyphenyl) phosphine, and alumina.
- An epoxy resin composition is disclosed.
- the epoxy resin composition which is powder is described.
- Patent Document 1 describes that it is suitably used for sealing semiconductor devices such as ICs, LSIs, transistors, thyristors, and diodes, and for manufacturing printed circuit boards. .
- Patent Document 2 discloses a sealing epoxy resin composition containing an epoxy resin, a phenol resin curing agent, a curing accelerator, and an inorganic filler.
- the epoxy resin composition for sealing which is a powder is described.
- it can be used as a general molding material, but it is used as a sealing material for a semiconductor device, and is particularly thin, multi-pin, long wire, narrow pad pitch, or
- it is described that it is suitably used as a sealing material for a semiconductor device in which a semiconductor chip is disposed on a mounting substrate such as an organic substrate or an organic film.
- Patent Document 3 discloses an epoxy resin composition containing a bisphenol F type liquid epoxy resin, a curing agent, and an inorganic filler.
- the epoxy resin composition (melt viscosity is 75 degreeC or more) which is solid is described.
- a semiconductor device for example, a multi-pin thin package such as TQFP, TSOP, and QFP, particularly a semiconductor device using a matrix frame It is described that it is suitably used as a sealing material.
- Patent Document 4 discloses an epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a phenol resin curing agent, a high thermal conductive filler, and an inorganic filler.
- the epoxy resin composition for semiconductor sealing which is powder is described.
- Patent Document 4 describes that it is used as a sealing material for electronic components such as semiconductor elements.
- Patent Document 5 listed below includes a first agent containing a bisphenol A type epoxy resin, a flexible epoxy resin in the skeleton, a second agent containing an acid anhydride compound and a curing accelerator, A two-component type epoxy resin composition having the following is disclosed. Patent Document 5 describes that the two-pack type epoxy resin composition is useful as an in-case filler.
- Patent Documents 1 to 4 specifically disclose an epoxy resin composition that is a powder or a solid. Such a powder or solid epoxy resin composition has low applicability and is difficult to place accurately in a predetermined region.
- the cured product of the conventional epoxy resin composition may have low heat dissipation. Furthermore, in the hardened
- flexibility may be low. If the flexibility of the cured product is low, the cured product may be peeled off due to, for example, deformation stress of the semiconductor element.
- Patent Documents 1 to 4 mainly describe sealing applications as specific applications of the epoxy resin composition.
- patent document 5 as a specific application of the epoxy resin composition, a case-filler application is mainly described.
- the epoxy resin compositions described in Patent Documents 1 to 5 are generally not used by coating on the surface of the semiconductor element in order to protect the semiconductor element.
- the present invention provides a curable composition suitably used for forming a cured product on the surface of a semiconductor element in order to protect the semiconductor element in a semiconductor device, and a method for producing the curable composition. With the goal.
- the objective of this invention is providing the manufacturing method of the curable composition which can obtain the hardened
- Another object of the present invention is to provide a semiconductor device using the curable composition.
- a flexible epoxy compound, an epoxy compound different from the flexible epoxy compound, a curing agent, spherical alumina, and a dispersant are included, and the amine value of the dispersant is 5 KOH mg / g.
- a curable composition is provided in which the acid value of the dispersant is 5 KOHmg / g or more.
- the amine value of the dispersant is 40 KOHmg / g or more and 95 KOHmg / g or less, and the acid value of the dispersant is 45 KOHmg / g or more and 95 KOHmg / g. It is as follows.
- the absolute value of the difference between the amine value of the dispersant and the acid value of the dispersant is 10 or less.
- the curable composition does not contain a solvent or contains less than 0.5% by weight of a solvent.
- the content of the spherical alumina is preferably 60% by volume or more, more preferably 70% by volume or more.
- the spherical alumina includes a spherical alumina having an average particle diameter of 0.1 ⁇ m or more and less than 10 ⁇ m, and a spherical alumina having an average particle diameter of 10 ⁇ m or more and 80 ⁇ m or less. Including.
- the curing agent is an allylphenol novolak compound.
- content of the epoxy compound different from the said flexible epoxy compound is 10 weight part or more and 100 weight with respect to 100 weight part of said flexible epoxy compounds. Or less.
- the curable composition comprises a silane coupling agent having a weight loss at 100 ° C. of 10% by weight or less, and a weight loss at 100 ° C. of 10% by weight.
- a titanate coupling agent which is the following, or an aluminate coupling agent whose weight loss at 100 ° C. is 10% by weight or less.
- the curing agent is a curing agent that is liquid at 23 ° C.
- the curable composition contains a curing accelerator.
- the said curable composition is arrange
- the said semiconductor element and the said other connection object member are used. It differs from what forms the hardened
- the curable composition is for protecting a semiconductor element used to form a cured product on the surface of the semiconductor element in order to protect the semiconductor element. Material.
- the curable composition is a material for protecting a semiconductor element that is used by being applied onto the surface of the semiconductor element in order to protect the semiconductor element.
- a method for producing the curable composition described above, the flexible epoxy compound, an epoxy compound different from the flexible epoxy compound, the curing agent, and the spherical shape comprising a mixing step of mixing alumina and the dispersant to obtain a curable composition.
- a semiconductor comprising a semiconductor element and a cured product disposed on the first surface of the semiconductor element, wherein the cured product is a cured product of the curable composition described above.
- the semiconductor element has a first electrode on a second surface side opposite to the first surface side, and the first electrode of the semiconductor element Are electrically connected to the second electrode in the connection target member having the second electrode on the surface.
- the curable composition according to the present invention includes a flexible epoxy compound, an epoxy compound different from the flexible epoxy compound, a curing agent, spherical alumina, and a dispersant, and the amine value of the dispersant is Since it is 5 KOHmg / g or more and the acid value of the dispersant is 5 KOHmg / g or more, the coating property is excellent. Furthermore, it is excellent in the heat dissipation of the hardened
- FIG. 1 is a partially cutaway front sectional view showing a semiconductor device using a curable composition according to a first embodiment of the present invention.
- FIG. 2 is a partially cutaway front sectional view showing a semiconductor device using a curable composition according to a second embodiment of the present invention.
- the curable composition according to the present invention is suitably used for forming a cured product on the surface of the semiconductor element in order to protect the semiconductor element.
- the curable composition according to the present invention is preferably applied on the surface of the semiconductor element in order to protect the semiconductor element.
- the curable composition according to the present invention comprises (A) a flexible epoxy compound, (B) an epoxy compound different from the flexible epoxy compound, (C) a curing agent, (E) spherical alumina, F) a dispersant.
- the method for producing a curable composition according to the present invention is a method for producing a curable composition preferably used for forming a cured product on the surface of the semiconductor element in order to protect the semiconductor element.
- the manufacturing method of the curable composition which concerns on this invention is a manufacturing method of the curable composition apply
- the method for producing a curable composition according to the present invention comprises (A) a flexible epoxy compound, (B) an epoxy compound different from the flexible epoxy compound, (C) a curing agent, and (E) a spherical alumina. And (F) a dispersing step is mixed to obtain a curable composition.
- the components (A), (B), (C), (E), and (F) (if necessary (D) a curing accelerator) may be mixed at one time, and some All of the components may be mixed and then mixed. Moreover, at the time of this mixing, without mixing the one part component of (A) (B), (C), (E), (F) component ((D) hardening accelerator as needed), A mixture in which some of the components are mixed may be obtained and used.
- the said mixing process is a process of obtaining the curable composition by which all (A) (B), (C), (E), (F) component ((D) hardening accelerator is mixed as needed) was mixed. .
- the amine value of the (F) dispersant is 5 KOHmg / g or more
- the acid value of the (F) dispersant is 5 KOHmg / g. g or more.
- the curable composition is preferably liquid at 23 ° C. and not solid at 23 ° C. so that it can be coated on the surface of the semiconductor element.
- viscous paste is also contained in liquid form.
- the curable composition according to the present invention and the curable composition obtained by the method for producing the curable composition according to the present invention have the above-described configuration, they have excellent applicability and are not intended at the time of application. Flow can be suppressed.
- the said curable composition can be favorably apply
- the curable composition can be selectively and accurately applied onto the surface of a portion where the heat dissipation of the semiconductor element is desired to be increased, and a cured product of the curable composition can be formed.
- the curable composition concerning this invention is equipped with the structure mentioned above, it is excellent in the heat dissipation of hardened
- the cured product of the curable composition according to the present invention is excellent in flexibility. For this reason, it becomes difficult to cause damage to the semiconductor element due to deformation stress of the semiconductor element, and further, it is difficult to peel the cured product from the surface of the semiconductor element.
- the cured product has high moisture resistance.
- cured material can also be improved.
- the curable composition according to the present invention can be well protected by curing the curable composition on the surface of the semiconductor element in order to protect the semiconductor element. Moreover, in order to protect a semiconductor element, in order to protect a semiconductor element, the said semiconductor element can be favorably protected by apply
- the cured product of the curable composition is also excellent in heat resistance and is not easily cracked. Furthermore, the cured product of the curable composition is also excellent in dimensional stability.
- the dispersion state is good and the applicability of the curable composition is good.
- a specific (F) dispersant since a specific (F) dispersant is used, it is not necessary to use a solvent (content of the solvent is 0% by weight (not contained)), and even when a solvent is used, good dispersion is achieved. In order to obtain the state, the content of the solvent can be reduced. For example, even if the solvent content is less than 0.5% by weight, a good dispersion state can be obtained. Moreover, if there is little content of a solvent, generation
- the curable composition is (G) It is preferable that a coupling agent is included.
- the curable composition according to the present invention preferably contains (D) a curing accelerator.
- (A) Flexible epoxy compound (A) By using a flexible epoxy compound, the softness
- DETA diethylenetriamine
- the flexible epoxy compound is, for example, an epoxy compound having a flexible portion in the molecule.
- the flexible epoxy compound is not particularly limited.
- the (A) flexible epoxy compound preferably has two or more epoxy groups.
- polyalkylene glycol diglycidyl ether is preferable.
- the polyalkylene glycol diglycidyl ether preferably has a structural unit in which 9 or more alkylene glycol groups are repeated.
- the upper limit of the number of repeating alkylene groups is not particularly limited.
- the number of repeating alkylene groups may be 30 or less.
- the alkylene group preferably has 2 or more carbon atoms, preferably 5 or less carbon atoms.
- polyalkylene glycol diglycidyl ether examples include polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, and polytetramethylene glycol diglycidyl ether.
- the content of the (A) flexible epoxy compound is preferably 3% by weight or more, more preferably 5% by weight or more, preferably 10% by weight or less, more preferably 8% by weight. It is as follows. (A) The softness
- (B) Epoxy compound different from flexible epoxy compound) (B) An epoxy compound different from the flexible epoxy compound does not have flexibility. By using the (B) epoxy compound together with the (A) flexible epoxy compound, the moisture resistance of the cured product of the curable composition is increased, and the sticking property to the protective film can be reduced. (B) As for an epoxy compound, only 1 type may be used and 2 or more types may be used together.
- an epoxy compound having a bisphenol skeleton an epoxy compound having a dicyclopentadiene skeleton, an epoxy compound having a naphthalene skeleton, an epoxy compound having an adamantane skeleton, an epoxy compound having a fluorene skeleton, an epoxy having a biphenyl skeleton
- an epoxy compound having a bi (glycidyloxyphenyl) methane skeleton an epoxy compound having a xanthene skeleton, an epoxy compound having an anthracene skeleton, and an epoxy compound having a pyrene skeleton.
- an epoxy compound is not polyalkylene glycol diglycidyl ether.
- the (B) epoxy compound is preferably an epoxy compound having a bisphenol skeleton (bisphenol type epoxy compound).
- Examples of the epoxy compound having a bisphenol skeleton include an epoxy monomer having a bisphenol skeleton of bisphenol A type, bisphenol F type, or bisphenol S type.
- Examples of the epoxy compound having a dicyclopentadiene skeleton include dicyclopentadiene dioxide and a phenol novolac epoxy monomer having a dicyclopentadiene skeleton.
- Examples of the epoxy compound having a naphthalene skeleton include 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1,7-diglycidyl.
- Examples include naphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, and 1,2,5,6-tetraglycidylnaphthalene.
- Examples of the epoxy compound having an adamantane skeleton include 1,3-bis (4-glycidyloxyphenyl) adamantane and 2,2-bis (4-glycidyloxyphenyl) adamantane.
- Examples of the epoxy compound having a fluorene skeleton include 9,9-bis (4-glycidyloxyphenyl) fluorene, 9,9-bis (4-glycidyloxy-3-methylphenyl) fluorene, and 9,9-bis (4- Glycidyloxy-3-chlorophenyl) fluorene, 9,9-bis (4-glycidyloxy-3-bromophenyl) fluorene, 9,9-bis (4-glycidyloxy-3-fluorophenyl) fluorene, 9,9-bis (4-Glycidyloxy-3-methoxyphenyl) fluorene, 9,9-bis (4-glycidyloxy-3,5-dimethylphenyl) fluorene, 9,9-bis (4-glycidyloxy-3,5-dichlorophenyl) Fluorene and 9,9-bis (4-glycidyloxy-3,5-dibromophenyl) Fluorene, and
- Examples of the epoxy compound having a biphenyl skeleton include 4,4'-diglycidylbiphenyl and 4,4'-diglycidyl-3,3 ', 5,5'-tetramethylbiphenyl.
- Examples of the epoxy compound having a bi (glycidyloxyphenyl) methane skeleton include 1,1′-bi (2,7-glycidyloxynaphthyl) methane, 1,8′-bi (2,7-glycidyloxynaphthyl) methane, 1,1′-bi (3,7-glycidyloxynaphthyl) methane, 1,8′-bi (3,7-glycidyloxynaphthyl) methane, 1,1′-bi (3,5-glycidyloxynaphthyl) methane 1,8'-bi (3,5-glycidyloxynaphthyl) methane, 1,2'-bi (2,7-glycidyloxynaphthyl) methane, 1,2'-bi (3,7-glycidyloxynaphthyl) And methane and 1,2′
- Examples of the epoxy compound having a xanthene skeleton include 1,3,4,5,6,8-hexamethyl-2,7-bis-oxiranylmethoxy-9-phenyl-9H-xanthene.
- the total content of (A) the flexible epoxy compound and (B) the epoxy compound is preferably 5% by weight or more, more preferably 8% by weight or more, preferably 15% by weight. % Or less, more preferably 12% by weight or less.
- the total content of (A) flexible epoxy compound and (B) epoxy compound is not less than the above lower limit and not more than the above upper limit, applicability of the curable composition, flexibility of the cured product, moisture resistance, and curing. The adhesion of the object to the semiconductor element is further improved, and sticking to the protective film can be further suppressed.
- the content of the epoxy compound (B) is preferably 10 parts by weight or more, more preferably 20 parts by weight or more, preferably 100 parts by weight or less, more preferably 90 parts by weight with respect to 100 parts by weight of the flexible epoxy compound. Less than parts by weight.
- content of an epoxy compound is more than the said minimum, the applicability
- cured material becomes it still higher that content of an epoxy compound is below the said upper limit.
- the (C) curing agent is preferably liquid at 23 ° C. Moreover, the wettability with respect to the surface of the semiconductor element of a curable composition becomes high by use of the hardening
- Examples of the curing agent include amine compounds (amine curing agents), imidazole compounds (imidazole curing agents), phenol compounds (phenol curing agents), and acid anhydrides (acid anhydride curing agents). However, when these curing agents are used, a curing agent that is liquid at 23 ° C. is selected.
- the curing agent may not be an imidazole compound.
- the (C) curing agent is preferably a phenol compound.
- the (C) curing agent preferably has an allyl group, and the phenol compound has an allyl group. preferable.
- phenol compound examples include phenol novolak, o-cresol novolak, p-cresol novolak, t-butylphenol novolak, dicyclopentadiene cresol, polyparavinylphenol, bisphenol A type novolak, xylylene modified novolak, decalin modified novolak, poly (di -O-hydroxyphenyl) methane, poly (di-m-hydroxyphenyl) methane, poly (di-p-hydroxyphenyl) methane and the like.
- the total content of (A) flexible epoxy compound and (B) epoxy compound is 100 parts by weight, and the content of (C) the curing agent is preferably 10 parts by weight or more, more preferably 20 parts by weight or more.
- the amount is preferably 30 parts by weight or more, preferably 100 parts by weight or less, more preferably 90 parts by weight or less, and still more preferably 80 parts by weight or less.
- a curable composition can be hardened favorably as content of a hardening
- curing agent is more than the said minimum.
- (D) curing accelerator) (D) By using a curing accelerator, the curing rate can be increased and the curable composition can be efficiently cured. (D) Only 1 type may be used for a hardening accelerator and 2 or more types may be used together.
- Examples of the curing accelerator include imidazole compounds, phosphorus compounds, amine compounds, and organometallic compounds. Especially, since the effect of this invention is further excellent, an amine compound is preferable.
- imidazole compound examples include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl- 2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-un Decylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2 ' -Mechi Imidazolyl- (1 ′)]-
- curing agent can be used.
- specific examples include PN23, PN40, and PN-H (trade names, all manufactured by Ajinomoto Fine Techno Co., Ltd.).
- curing accelerators which are also called microencapsulated imidazoles, which are addition-reacted to the hydroxyl group of an epoxy adduct of an amine compound, such as Novacure HX-3088, Novacure HX-3941, HX-3742, HX-3722 (trade name, Asahi Kasei E-Materials Co., Ltd.).
- inclusion imidazole can also be used.
- a specific example is TIC-188 (trade name, manufactured by Nippon Soda Co., Ltd.).
- Examples of the phosphorus compound include triphenylphosphine.
- amine compounds examples include 2,4,6-tris (dimethylaminomethyl) phenol, diethylamine, triethylamine, diethylenetetramine, triethylenetetramine, 4,4-dimethylaminopyridine, and dioctabicycloundecene octylate. Is mentioned.
- organometallic compound examples include zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III).
- the content of (D) the curing accelerator is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight, based on 100 parts by weight of the total of (A) the flexible epoxy compound and (B) the epoxy compound. It is at least 10 parts by weight, more preferably at most 8 parts by weight.
- content of a hardening accelerator is more than the said minimum, a curable composition can be hardened favorably.
- the content of (D) the curing accelerator is not more than the above upper limit, the residual amount of (D) the curing accelerator that has not contributed to curing in the cured product is reduced.
- (E) spherical alumina (E) By using spherical alumina, it is possible to improve the heat dissipation of the cured product while maintaining high applicability of the curable composition and maintaining high flexibility of the cured product.
- the spherical alumina is not particularly limited.
- As a spherical alumina only 1 type may be used, for example, 2 or more types from which an average particle diameter differs may be used together.
- Spherical alumina is spherical.
- the spherical shape means that the aspect ratio (major axis / minor axis) is 1 or more and 1.3 or less.
- the average particle diameter of the spherical alumina is preferably 0.1 ⁇ m or more, and preferably 150 ⁇ m or less.
- the spherical alumina can be easily filled at a high density.
- paintability of a curable composition becomes it still higher that the average particle diameter of spherical alumina is below the said upper limit.
- (E) as spherical alumina (E1) has an average particle size of 0.1 ⁇ m or more and less than 10 ⁇ m. It is preferable to use spherical alumina and (E2) spherical alumina having an average particle diameter of 10 ⁇ m or more and 80 ⁇ m or less.
- the curable composition preferably contains (E1) a spherical alumina having an average particle diameter of 0.1 ⁇ m or more and less than 10 ⁇ m, and (E2) a spherical alumina having an average particle diameter of 10 ⁇ m or more and 80 ⁇ m or less.
- the above-mentioned “average particle diameter” is an average particle diameter obtained from a volume average particle size distribution measurement result measured with a laser diffraction particle size distribution measuring apparatus.
- the content of (E) spherical alumina is preferably 55% by volume or more, more preferably 60% by volume or more, still more preferably 70% by volume or more, and preferably 80% by volume or less.
- cured material becomes it higher that content of spherical alumina is more than the said minimum.
- the coating property of a curable composition becomes it still higher that content of spherical alumina is below the said upper limit.
- (E1) With respect to 100 parts by volume of spherical alumina having an average particle diameter of 0.1 ⁇ m or more and less than 10 ⁇ m, the content of (E2) spherical alumina having an average particle diameter of 10 ⁇ m or more and 80 ⁇ m or less is preferably 40 Volume parts or more, more preferably 50 parts by volume or more, preferably 70 parts by volume or less, more preferably 60 parts by volume or less.
- ((F) Dispersant The amine value of (F) dispersant is 5 KOHmg / g or more, and the acid value of (F) dispersant is 5 KOHmg / g or more. By using such a specific dispersant, the effect of the present invention is exhibited. (F) Only 1 type may be used for a dispersing agent and 2 or more types may be used together. The amine value of the dispersant can be measured according to JIS K7237, and the acid value of the dispersant can be measured according to JIS K0070.
- the amine value of the (F) dispersant is preferably 20 KOHmg / g or more, more preferably 40 KOHmg / g or more, preferably 110 KOHmg / g or less, more preferably 95 KOH mg / g or less.
- the acid value of the (F) dispersant is preferably 20 KOH mg / g or more, more preferably 45 KOH mg / g or more, preferably 110 KOH mg / g or less, more preferably. Is 95 KOHmg / g or less.
- the absolute value of the difference between the amine value of (F) the dispersant and the acid value of (F) the dispersant is preferably 10 KOHmg / g or less, more Preferably it is 7 KOHmg / g or less.
- the absolute value of the difference between the amine value of the (F) dispersant and the acid value of the (F) dispersant may be 0 KOH mg / g (the amine value and the acid value are the same).
- the (F) dispersant examples include polycarboxylates, alkylammonium salts, alkylol ammonium salts, phosphate ester salts, acrylic block copolymers, and polymer salts. Since the effect of the present invention is further improved, the dispersant (F) is preferably a polycarboxylic acid salt, an alkylol ammonium salt, or a phosphate ester salt.
- the content of the (F) dispersant is preferably 0.05% by weight or more, more preferably 0.1% by weight or more, preferably 2% by weight or less, more preferably 1% by weight. % Or less.
- the content of the dispersant is not less than the above lower limit, (E) the dispersibility of the spherical alumina is further enhanced.
- the coating property of a curable composition becomes it still higher that content of a dispersing agent is below the said upper limit.
- the curable composition preferably contains (G) a coupling agent.
- G By using a coupling agent, the moisture resistance and adhesive force of the hardened
- G As for a coupling agent, only 1 type may be used and 2 or more types may be used together.
- the content of the (G) coupling agent is preferably 0.1% by weight or more, more preferably 0.3% by weight or more, preferably 2% by weight or less, more preferably 1%. % By weight or less.
- content of a coupling agent is more than the said minimum, the moisture resistance of the hardened
- the coupling agent (G) is a silane coupling agent whose weight loss at 100 ° C. is 10% by weight or less, a titanate coupling agent whose weight loss at 100 ° C. is 10% by weight or less, or at 100 ° C. It is preferable to include an aluminate coupling agent having a weight loss of 10% by weight or less. When using these preferable silane coupling agents, only 1 type may be used for these silane coupling agents, and 2 or more types may be used together.
- the weight loss at 100 ° C. is 10% by weight or less
- the volatilization of the (G) coupling agent is suppressed during curing, and the amount of voids generated can be suppressed.
- the heat dissipation of the cured product is further enhanced.
- tackiness can be improved.
- the weight decrease at 100 ° C. was measured by using an infrared moisture meter (“FD-720” manufactured by Kett Scientific Laboratory) at a temperature increase rate of 50 ° C./min. It can be determined by measuring the decrease.
- FD-720 infrared moisture meter
- the said curable composition does not contain a solvent or when the solvent is contained, it is preferable that the content of the solvent is small.
- Examples of the solvent include water and organic solvents. Among these, an organic solvent is preferable from the viewpoint of further improving the removability of the residue.
- Examples of the organic solvent include alcohols such as ethanol, ketones such as acetone, methyl ethyl ketone, and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, cellosolve, methyl cellosolve, butyl cellosolve, carbitol, and methylcarbitol.
- Glycol ethers such as butyl carbitol, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, tripropylene glycol monomethyl ether, ethyl acetate, butyl acetate, butyl lactate, cellosolve acetate, butyl cellosolve Acetate, carbitol acetate, butyl carbitol acetate, propylene glycol mono Chill ether acetate, dipropylene glycol monomethyl ether acetate, esters such as propylene carbonate, octane, aliphatic hydrocarbons decane, and petroleum ether, petroleum solvents such as naphtha.
- Glycol ethers such as butyl carbitol, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, diprop
- the content of the solvent is preferably less than 0.5% by weight and more preferably less than 0.3% by weight in 100% by weight of the curable composition.
- the curable composition may be a natural wax such as carnauba wax, a synthetic wax such as polyethylene wax, a higher fatty acid such as stearic acid or zinc stearate and a metal salt thereof, or a mold release agent such as paraffin; carbon black Colorants such as Bengala; flame retardants such as brominated epoxy resins, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene; inorganic ion exchangers such as bismuth oxide hydrate; silicone Various additives such as an oil trapping agent such as an oil or silicone rubber; an antioxidant; an ion exchanger such as an anion exchanger, a cation exchanger or an amphoteric ion exchanger may be included.
- a natural wax such as carnauba wax, a synthetic wax such as polyethylene wax, a higher fatty acid such as stearic acid or zinc stearate and a metal salt thereof, or a mold release agent such as
- the curable composition may contain a spherical filler having a thermal conductivity of 10 W / m ⁇ K or more as necessary, for example, spherical synthetic magnesite, spherical crystalline silica, spherical Boron nitride, spherical aluminum nitride, spherical silicon nitride, spherical silicon carbide, spherical zinc oxide, spherical magnesium oxide, or the like may be included.
- a spherical filler having a thermal conductivity of 10 W / m ⁇ K or more as necessary, for example, spherical synthetic magnesite, spherical crystalline silica, spherical Boron nitride, spherical aluminum nitride, spherical silicon nitride, spherical silicon carbide, spherical zinc oxide, spherical magnesium oxide, or the like may be
- the curable composition is preferably used by coating on the surface of the semiconductor element in order to protect the semiconductor element.
- the curable composition is preferably a material for protecting a semiconductor element that is used by coating on the surface of the semiconductor element in order to protect the semiconductor element.
- the curable composition is preferably a coating material that covers the surface of the semiconductor element. It is preferable that the said curable composition is not apply
- the curable composition is preferably different from a material for sealing the semiconductor element, and is preferably not a sealing agent for sealing the semiconductor element.
- the curable composition is preferably not an underfill material.
- the semiconductor element has a first electrode on a second surface side, and the curable composition is used by being applied on a first surface opposite to the second surface side of the semiconductor element. It is preferred that The curable composition is preferably used for forming a cured product on the surface of the semiconductor element in order to protect the semiconductor element in the semiconductor device.
- the curable composition is preferably a semiconductor element protecting material used to form a cured product on the surface of the semiconductor element in order to protect the semiconductor element in the semiconductor device.
- the curable composition is preferably used for forming a cured product on the surface of the semiconductor element to protect the semiconductor element, and on the surface of the cured product opposite to the semiconductor element side. It is suitably used for arranging a protective film to obtain a semiconductor device.
- the curable composition is disposed between a semiconductor element and another connection target member, and forms a cured product that adheres and fixes the semiconductor element and the other connection target member so as not to peel off. Are preferably different.
- Examples of the method for applying the curable composition include a coating method using a dispenser, a coating method using screen printing, and a coating method using an ink jet apparatus.
- the curable composition is preferably used by being applied by a dispenser, screen printing, vacuum screen printing, or an application method using an inkjet apparatus. From the viewpoint of facilitating application and making it more difficult to generate voids in the cured product, the curable composition is preferably applied by a dispenser.
- the semiconductor device according to the present invention includes a semiconductor element and a cured product disposed on the first surface of the semiconductor element.
- the cured product is a cured product of the curable composition described above, and is formed by curing the curable composition.
- the curable composition forms a cured product on the surface of the semiconductor element, and a protective film is disposed on the surface of the cured product opposite to the semiconductor element side.
- a cured product is formed on the surface of the semiconductor element, and a surface opposite to the semiconductor element side of the cured product is exposed. It is preferably used for obtaining a semiconductor device.
- FIG. 1 is a partially cutaway front sectional view showing a semiconductor device using a curable composition according to a first embodiment of the present invention.
- a semiconductor device 1 shown in FIG. 1 includes a semiconductor element 2 and a cured product 3 arranged on the first surface 2 a of the semiconductor element 2.
- the cured product 3 is formed by curing the curable composition described above.
- the cured product 3 is disposed in a partial region on the first surface 2 a of the semiconductor element 2.
- the curable composition mentioned above is used as a semiconductor element protection material.
- the semiconductor element 2 has a first electrode 2A on the second surface 2b side opposite to the first surface 2a side.
- the semiconductor device 1 further includes a connection target member 4.
- the connection target member 4 has a second electrode 4A on the surface 4a.
- the semiconductor element 2 and the connection target member 4 are bonded and fixed via another cured product 5 (connection portion).
- the first electrode 2 ⁇ / b> A of the semiconductor element 2 and the second electrode 4 ⁇ / b> A of the connection target member 4 face each other and are electrically connected by the conductive particles 6.
- the first electrode 2 ⁇ / b> A and the second electrode 4 ⁇ / b> A may be electrically connected by being in contact with each other.
- cured material 3 is arrange
- a protective film 7 is disposed on the surface of the cured product 3 opposite to the semiconductor element 2 side. Thereby, not only the heat dissipation and the protection of the semiconductor element are enhanced by the cured product 3, but also the protection of the semiconductor element can be further enhanced by the protective film 7. Since the hardened
- connection target member examples include a glass substrate, a glass epoxy substrate, a flexible printed substrate, and a polyimide substrate.
- the thickness of the cured product of the curable composition is preferably 400 ⁇ m or more, more preferably 500 ⁇ m or more, preferably 2000 ⁇ m or less, more preferably 1900 ⁇ m or less.
- the thickness of the cured product of the curable composition may be thinner than the thickness of the semiconductor element.
- FIG. 2 is a partially cutaway front sectional view showing a semiconductor device using a curable composition according to a second embodiment of the present invention.
- a semiconductor device 1X shown in FIG. 2 includes a semiconductor element 2 and a cured product 3X disposed on the first surface 2a of the semiconductor element 2.
- the cured product 3X is formed by curing the above-described curable composition.
- the cured product 3 ⁇ / b> X is disposed in the entire region on the first surface 2 a of the semiconductor element 2.
- the protective film is not arranged on the surface opposite to the semiconductor element 2 side of the cured product 3X.
- the surface opposite to the semiconductor element 2 side of the cured product 3X is exposed.
- the curable composition mentioned above is used as a semiconductor element protection material.
- a protective film is disposed on the surface of the cured product opposite to the semiconductor element side, or the surface of the cured product opposite to the semiconductor element side is exposed. Is preferred.
- FIGS. 1 and 2 are merely examples of the semiconductor device, and can be appropriately modified to an arrangement structure of a cured product of the curable composition.
- the thermal conductivity of the cured product of the semiconductor protective material is not particularly limited, but is preferably 2.3 W / m ⁇ K or more.
- Dispersant ANTI-TERRA-U 100 (manufactured by BYK, acid value 50 KOH mg / g, amine value 35 KOH mg / g) BYK-9076 (manufactured by BYK, acid value 38 KOH mg / g, amine value 44 KOH mg / g) DISPERBYK-180 (manufactured by BYK, acid value 94 KOH mg / g, amine value 94 KOH mg / g) DISPERBYK-142 (BYK, acid value 46 KOHmg / g, amine value 43 KOHmg / g) ANTI-TERRA-204 (BYK, acid value 41 KOHmg / g, amine value 37 KOHmg / g) DISPERBYK-145 (BYK, acid value 76 KOHmg / g, amine value 71 KOHmg / g) (F ′) Other
- (G) Coupling agent KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd., 3-glycidoxypropyltrimethoxysilane, weight loss at 100 ° C .: more than 10% by weight)
- A-LINK599 (manufactured by 3-octanoylthio-1-propyltriethoxysilane, weight loss at 100 ° C .: 10% by weight or less)
- TOG (IPA cut) Nihon Soda Co., Ltd., titanium-i-propoxyoctylene glycolate, weight loss at 100 ° C .: 10% by weight or less
- AL-M Al-M (Ajinomoto Fine Techno Co., Ltd., acetoalkoxyaluminum diisopropylate, weight loss at 100 ° C .: 10% by weight or less)
- KYOWARD 500PL Kerowa Chemical Co., Ltd., ion trapping agent
- jER828 is 2.5 parts by weight
- Fujicure 7000 is 2 parts by weight
- SA-102 is 0.5 parts by weight
- ANTI-TERRA-U 100 is 0.5 parts by weight.
- 35 parts by weight of CB-P05, 35 parts by weight of CB-A70, and 0.1 parts by weight of Kyoward 500PL were mixed and defoamed to obtain a semiconductor element protecting material (curable composition). .
- Examples 2 to 27 and Comparative Examples 1 to 7 A material for protecting a semiconductor element (curable composition) was obtained in the same manner as in Example 1 except that the type and amount of the compounding component (unit: parts by weight) were changed as shown in Tables 1 to 4 below. It was.
- the thermal conductivity of the obtained evaluation sample was measured using a thermal conductivity meter “Rapid thermal conductivity meter QTM-500” manufactured by Kyoto Electronics Industry Co., Ltd.
- the thermal conductivity was determined according to the following criteria.
- DSM-8104 manufactured by Hioki Electric Co., Ltd., digital super insulation / microammeter
- electrode for flat plate sample SME-8310 (manufactured by Hioki Electric Co., Ltd.) It was measured.
- a pressure cooker test was conducted with an advanced accelerated life test apparatus EHS-211 (manufactured by Espec). After being left for 24 hours under the conditions of 121 ° C., humidity 100% RH and 2 atm, and then allowed to stand for 24 hours in an environment of 23 ° C. and humidity 50% RH, the volume resistivity was measured. The decrease rate of the volume resistivity before and after the pressure cooker test was calculated, and the moisture resistance was judged according to the following criteria.
- ⁇ Decrease rate of volume resistivity before and after the test is 10% or less
- ⁇ Decrease rate of the volume resistivity before and after the test exceeds 10% and 20% or less
- ⁇ Decrease rate of the volume resistivity before and after the test is 20%
- Adhesive strength die shear strength
- a semiconductor element protecting material was applied so that the adhesion area was 3 mm ⁇ 3 mm, and a 1.5 mm square Si chip was placed thereon to obtain a test sample.
- the obtained test sample was heated at 150 ° C. for 2 hours to cure the semiconductor element protecting material.
- the die shear strength at 25 ° C. was evaluated at a speed of 300 ⁇ m / sec using a die shear tester (“DAGE 4000” manufactured by Arctech).
- Tack protection film sticking property
- the obtained evaluation sample was left for 24 hours in an atmosphere of 23 ° C. and humidity 50% RH. Immediately after being allowed to stand for 24 hours, stress was measured using a tack tester TA-500 (manufactured by UBM) in order to evaluate the tackiness (tackiness) of the surface of the evaluation sample.
- DSM-8104 manufactured by Hioki Electric Co., Ltd., digital super insulation / microammeter
- electrode for flat plate sample SME-8310 (manufactured by Hioki Electric Co., Ltd.) It was measured.
- the evaluation sample was allowed to stand at 180 ° C. for 100 hours, and then allowed to stand at 23 ° C. and a humidity of 50% RH for 24 hours, and then volume resistivity was measured.
- the decrease rate of the volume resistivity before and after the heat test was calculated, and the heat resistance was judged according to the following criteria.
- ⁇ Decrease rate of volume resistivity before and after the test is 10% or less
- ⁇ Decrease rate of the volume resistivity before and after the test exceeds 10% and 20% or less
- ⁇ Decrease rate of the volume resistivity before and after the test is 20%
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Abstract
Description
(A)可撓性エポキシ化合物を用いることによって、硬化物の柔軟性及び接着力を高めることができる。(A)可撓性エポキシ化合物は、1種のみが用いられてもよく、2種以上が併用されてもよい。
(B)可撓性エポキシ化合物とは異なるエポキシ化合物は、可撓性を有さない。(A)可撓性エポキシ化合物とともに(B)エポキシ化合物を用いることによって、硬化性組成物の硬化物の耐湿性が高くなり、保護フィルムに対する貼り付き性を低下させることができる。(B)エポキシ化合物は、1種のみが用いられてもよく、2種以上が併用されてもよい。
硬化性組成物の塗布性をより一層高める観点からは、(C)硬化剤は、23℃で液状であることが好ましい。また、23℃で液状である硬化剤の使用により、硬化性組成物の半導体素子の表面に対する濡れ性が高くなる。但し、本発明では、(C)硬化剤は、23℃で液状でなくてもよい。(C)硬化剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。
(D)硬化促進剤の使用によって、硬化速度を速くし、硬化性組成物を効率的に硬化させることができる。(D)硬化促進剤は1種のみが用いられてもよく、2種以上が併用されてもよい。
(E)球状アルミナを用いることによって、硬化性組成物の塗布性を高く維持しつつ、かつ硬化物の柔軟性を高く維持しつつ、硬化物の放熱性を高めることができる。(E)球状アルミナは特に限定されない。(E)球状アルミナとして、1種のみが用いられてもよく、例えば平均粒子径が異なる2種以上が併用されてもよい。
(F)分散剤のアミン価は5KOHmg/g以上であり、かつ(F)分散剤の酸価は5KOHmg/g以上である。このような特定の分散剤を用いることによって、本発明の効果が発揮される。(F)分散剤は1種のみが用いられてもよく、2種以上が併用されてもよい。なお、上記分散剤のアミン価はJIS K7237に準拠して測定することができ、上記分散剤の酸価はJIS K0070に準拠して測定することができる。
上記硬化性組成物は、(G)カップリング剤を含むことが好ましい。(G)カップリング剤の使用により、硬化性組成物の硬化物の耐湿性及び接着力がより一層高くなる。(G)カップリング剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。
上記硬化性組成物は、溶剤を含まないか、又は溶剤を含む場合には溶剤の含有量は少ない方が好ましい。
上記硬化性組成物は、好ましくは、半導体素子を保護するために、上記半導体素子の表面上に塗布して用いられる。上記硬化性組成物は、好ましくは、半導体素子を保護するために、上記半導体素子の表面上に塗布して用いられる半導体素子保護用材料であることが好ましい。上記硬化性組成物は、半導体素子の表面を被覆する被覆材料であることが好ましい。上記硬化性組成物は、半導体素子の側面上に塗布されないことが好ましい。上記硬化性組成物は、上記半導体素子を封止するための材料とは異なることが好ましく、上記半導体素子を封止するための封止剤ではないことが好ましい。上記硬化性組成物は、アンダーフィル材ではないことが好ましい。上記半導体素子が、第2の表面側に第1の電極を有し、上記硬化性組成物は、上記半導体素子の上記第2の表面側とは反対の第1の表面上に塗布されて用いられることが好ましい。上記硬化性組成物は、半導体装置において、半導体素子を保護するために、上記半導体素子の表面上に硬化物を形成するために好適に用いられる。上記硬化性組成物は、半導体装置において、半導体素子を保護するために、上記半導体素子の表面上に硬化物を形成するために用いられる半導体素子保護用材料であることが好ましい。上記硬化性組成物は、半導体素子を保護するために、上記半導体素子の表面上に硬化物を形成するために好適に用いられ、かつ上記硬化物の上記半導体素子側とは反対の表面上に保護フィルムを配置して、半導体装置を得るために好適に用いられる。上記硬化性組成物は、半導体素子と他の接続対象部材との間に配置されて、上記半導体素子と上記他の接続対象部材とを剥離しないように接着及び固定する硬化物を形成するものとは異なることが好ましい。
EX-821(n(アルキレングリコール基の数)=4)(ナガセケムテックス社製、ポリエチレングリコールジグリシジルエーテル、エポキシ当量:185)
EX-830(n=9)(ナガセケムテックス社製、ポリエチレングリコールジグリシジルエーテル、エポキシ当量:268)
EX-931(n=11)(ナガセケムテックス社製、ポリプロピレングリコールジグリシジルエーテル、エポキシ当量:471)
EX-861(n=22)(ナガセケムテックス社製、ポリエチレングリコールジグリシジルエーテル、エポキシ当量:551)
jER828(三菱化学社製、ビスフェノールA型エポキシ樹脂、エポキシ当量:188)
jER834(三菱化学社製、ビスフェノールA型エポキシ樹脂、軟化点:30℃、エポキシ当量:255)
フジキュアー7000(富士化成社製、23℃で液状、アミン化合物)
リカシッドMH-700(新日本理化社製、23℃で液状、酸無水物)
MEH-8005(明和化成社製、23℃で液状、アリルフェノールノボラック化合物)
SA-102(サンアプロ社製、DBUオクチル酸塩)
HX-3742(旭化成イーマテリアルズ社製、マイクロカプセルイミダゾール)
AO-802(アドマテックス社製、平均粒子径0.7μm)
CB-P05(昭和電工社製、平均粒子径5μm)
CB-P15(昭和電工社製、平均粒子径15μm)
CB-P40(昭和電工社製、平均粒子径40μm)
CB-A70(昭和電工社製、平均粒子径70μm)
AL-13-H(昭和電工社製、平均粒子径60μm)
AL-42KT(昭和電工社製、平均粒子径4.6μm)
ANTI-TERRA-U 100(BYK社製、酸価50KOHmg/g、アミン価35KOHmg/g)
BYK-9076(BYK社製、酸価38KOHmg/g、アミン価44KOHmg/g)
DISPERBYK-180(BYK社製、酸価94KOHmg/g、アミン価94KOHmg/g)
DISPERBYK-142(BYK社製、酸価46KOHmg/g、アミン価43KOHmg/g)
ANTI-TERRA-204(BYK社製、酸価41KOHmg/g、アミン価37KOHmg/g)
DISPERBYK-145(BYK社製、酸価76KOHmg/g、アミン価71KOHmg/g)
(F’)その他の分散剤
DISPERBYK-102(BYK社製、酸価101KOHmg/g)
DISPERBYK-109(BYK社製、アミン価140KOHmg/g)
KBM-403(信越化学工業社製、3-グリシドキシプロピルトリメトキシシラン、100℃における重量減少:10重量%を超える)
A-LINK599(momentive社製、3-オクタノイルチオ-1-プロピルトリエトキシシラン、100℃における重量減少:10重量%以下)
TOG(IPAカット)(日本曹達社製、チタニウム-i-プロポキシオクチレングリコレート、100℃における重量減少:10重量%以下)
AL-M(味の素ファインテクノ社製、アセトアルコキシアルミニウムジイソプロピレート、100℃における重量減少:10重量%以下)
キョーワード500PL(協和化学社製、イオントラップ剤)
MFDG(日本乳化剤社製、沸点187℃)
DBDG(日本乳化剤社製、沸点254℃)
EX-821(n=4)を5.5重量部、jER828を2.5重量部、フジキュアー7000を2重量部、SA-102を0.5重量部、ANTI-TERRA-U 100を0.5重量部、CB-P05を35重量部、CB-A70を35重量部、キョーワード500PLを0.1重量部混合し、脱泡を行い、半導体素子保護用材料(硬化性組成物)を得た。
配合成分の種類及び配合量(単位は重量部)を下記の表1~4に示すように変更したこと以外は実施例1と同様にして、半導体素子保護用材料(硬化性組成物)を得た。
(1)25℃における粘度の測定
B型粘度計(東機産業社製「TVB-10型」)を用いて、半導体素子保護用材料の25℃における10rpmでの粘度(Pa・s)を測定した。粘度を下記の基準で判定した。
○:60Pa・s以上、125Pa・s未満
△:125Pa・s以上、150Pa・s未満
×:150Pa・s以上、又は測定不可能
得られた半導体素子保護用材料を150℃で2時間加熱し、硬化させ、100mm×100mm×厚さ50μmの硬化物を得た。この硬化物を評価サンプルとした。
○:熱伝導率が3.0W/m・K以上
△:熱伝導率が2.3W/m・K以上、3.0W/m・K未満
×:熱伝導率が2.3W/m・K未満
得られた半導体素子保護用材料をディスペンサー装置(武蔵エンジニアリング社製「SHOTMASTER-300」)から、ポリイミドフィルムに直径5mm、高さ2mmになるように直接吐出した後、半導体素子保護用材料を150℃で2時間加熱して硬化させた。硬化後の半導体素子保護用材料の形状から塗布性を下記の基準で判定した。
○○:直径5.45mm以上、かつ高さ1.75mm未満(流動性あり)
○:直径5.3mmを超え、5.45mm未満、かつ高さ1.75mmを超え、1.8mm未満(流動性あり)
△:直径5.15mmを超え、5.3mm未満、かつ高さ1.8mmを超え、1.9mm未満(流動性少しあり)
△△:直径5mmを超え、5.15mm未満、かつ高さ1.9mmを超え、2mm未満(流動性少しあり)
×:直径5mm、かつ高さ2mmのまま(流動性なし)、又は塗布不可能
得られた半導体素子保護用材料を150℃で2時間加熱し、硬化させ、100mm×100mm×厚さ50μmの硬化物を得た。この硬化物を評価サンプルとした。
○:試験前後の体積抵抗率の低下率が10%以下
△:試験前後の体積抵抗率の低下率が10%を超え、20%以下
×:試験前後の体積抵抗率の低下率が20%を超える
得られた半導体素子保護用材料100gをディスペンサー装置(武蔵エンジニアリング社製「SHOTMASTER-300」)から、ポリイミドフィルムに吐出した。半導体素子保護用材料100gの吐出中にボイドの発生の有無を確認した。ボイドの発生量を下記の基準で判定した。なお、半導体素子保護用材料を150℃で2時間加熱して硬化させたところ、吐出中に発生したボイドは硬化物中に残存していた。なお、ボイドが発生している場合に、ボイドがある部分において、硬化物の放熱性が低くなる傾向があることを確認した。また、ボイドがある部分近傍は、意図しない剥離の起点となる。
○:ボイドが発生しない
△:ボイドが1~2個発生
×:ボイドが3個以上発生
ポリイミド基板上に、接着面積が3mm×3mmになるように半導体素子保護用材料を塗布し、1.5mm角のSiチップを載せて、テストサンプルを得た。
○:ダイシェア強度が10N以上
△:ダイシェア強度が5N以上、10N未満
×:ダイシェア強度が5N未満
得られた半導体素子保護用材料を150℃で2時間加熱し、硬化させ、100mm×100mm×厚さ50μmの硬化物を得た。この硬化物を評価サンプルとした。
○:応力が50gf/cm2未満
△:応力が50gf/cm2以上、100gf/cm2未満
×:応力が100gf/cm2以上
得られた半導体素子保護用材料をディスペンサー装置(武蔵エンジニアリング社製「SHOTMASTER―300」)から、ポリイミドフィルムに縦20mm、横100mm、高さ10mmになるように直接吐出した後、半導体素子保護用材料を150℃で2時間加熱して硬化させた。硬化後にポリイミドフィルムの反りを目視で確認し、フィルム反りを下記の基準で判定した。
○:ポリイミドフィルムの反りなし
×:ポリイミドフィルムの反り発生
得られた半導体素子保護用材料を150℃で2時間加熱し、硬化させ、100mm×100mm×厚さ50μmの硬化物を得た。この硬化物を評価サンプルとした。
○:試験前後の体積抵抗率の低下率が10%以下
△:試験前後の体積抵抗率の低下率が10%を超え、20%以下
×:試験前後の体積抵抗率の低下率が20%を超える
2…半導体素子
2a…第1の表面
2b…第2の表面
2A…第1の電極
3,3X…硬化物
4…接続対象部材
4a…表面
4A…第2の電極
5…他の硬化物
6…導電性粒子
7…保護フィルム
Claims (20)
- 可撓性エポキシ化合物と、可撓性エポキシ化合物とは異なるエポキシ化合物と、硬化剤と、球状アルミナと、分散剤とを含み、
前記分散剤のアミン価が5KOHmg/g以上であり、かつ前記分散剤の酸価が5KOHmg/g以上である、硬化性組成物。 - 前記分散剤のアミン価が40KOHmg/g以上、95KOHmg/g以下であり、かつ前記分散剤の酸価が45KOHmg/g以上、95KOHmg/g以下である、請求項1に記載の硬化性組成物。
- 前記分散剤のアミン価と前記分散剤の酸価との差の絶対値が10以下である、請求項1又は2に記載の硬化性組成物。
- 溶剤を含まないか、又は溶剤を0.5重量%未満で含む、請求項1~3のいずれか1項に記載の硬化性組成物。
- 前記球状アルミナの含有量が60体積%以上である、請求項1~4のいずれか1項に記載の硬化性組成物。
- 前記球状アルミナの含有量が70体積%以上である、請求項5に記載の硬化性組成物。
- 前記球状アルミナが、平均粒子径が0.1μm以上、10μm未満である球状アルミナと、平均粒子径が10μm以上、80μm以下である球状アルミナとを含む、請求項1~6のいずれか1項に記載の硬化性組成物。
- 前記硬化剤がアリルフェノールノボラック化合物である、請求項1~7のいずれか1項に記載の硬化性組成物。
- 前記可撓性エポキシ化合物100重量部に対して、前記可撓性エポキシ化合物とは異なるエポキシ化合物の含有量が10重量部以上、100重量部以下である、請求項1~8のいずれか1項に記載の硬化性組成物。
- 100℃での重量減少が10重量%以下であるシランカップリング剤、100℃での重量減少が10重量%以下であるチタネートカップリング剤、又は100℃での重量減少が10重量%以下であるアルミネートカップリング剤を含む、請求項1~9のいずれか1項に記載の硬化性組成物。
- 前記硬化剤が、23℃で液状である硬化剤である、請求項1~10のいずれか1項に記載の硬化性組成物。
- 硬化促進剤を含む、請求項1~11のいずれか1項に記載の硬化性組成物。
- 半導体素子と他の接続対象部材との間に配置されて、前記半導体素子と前記他の接続対象部材とを剥離しないように接着及び固定する硬化物を形成するものとは異なる、請求項1~12のいずれか1項に記載の硬化性組成物。
- 半導体素子を保護するために、前記半導体素子の表面上に硬化物を形成するために用いられる半導体素子保護用材料である、請求項1~13のいずれか1項に記載の硬化性組成物。
- 半導体素子を保護するために、前記半導体素子の表面上に塗布して用いられる半導体素子保護用材料である、請求項1~14のいずれか1項に記載の硬化性組成物。
- 半導体素子を保護するために、前記半導体素子の表面上に塗布して用いられる半導体素子保護用材料であり、
硬化促進剤を含み、
前記硬化剤が、23℃で液状である硬化剤である、請求項1~14のいずれか1項に記載の硬化性組成物。 - 半導体素子と他の接続対象部材との間に配置されて、前記半導体素子と前記他の接続対象部材とを剥離しないように接着及び固定する硬化物を形成するものとは異なる、請求項1~16のいずれか1項に記載の硬化性組成物。
- 請求項1~17のいずれか1項に記載の硬化性組成物の製造方法であって、
前記可撓性エポキシ化合物と、前記可撓性エポキシ化合物とは異なるエポキシ化合物と、前記硬化剤と、前記球状アルミナと、前記分散剤とを混合して、硬化性組成物を得る混合工程を備える、硬化性組成物の製造方法。 - 半導体素子と、前記半導体素子の第1の表面上に配置された硬化物とを備え、
前記硬化物が、請求項1~17のいずれか1項に記載の硬化性組成物の硬化物である、半導体装置。 - 前記半導体素子が、前記第1の表面側とは反対側の第2の表面側に第1の電極を有し、前記半導体素子の第1の電極が、第2の電極を表面に有する接続対象部材における前記第2の電極と電気的に接続されている、請求項19に記載の半導体装置。
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WO2018181737A1 (ja) * | 2017-03-30 | 2018-10-04 | 味の素株式会社 | ペースト状樹脂組成物 |
JP2019011406A (ja) * | 2017-06-29 | 2019-01-24 | 京セラ株式会社 | 粉粒状半導体封止用樹脂組成物及び半導体装置 |
WO2020184324A1 (ja) * | 2019-03-08 | 2020-09-17 | 株式会社Adeka | 繊維強化プラスチック用樹脂組成物、及び該組成物を含有する繊維強化プラスチック |
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CN110551363A (zh) * | 2018-05-30 | 2019-12-10 | 全球能源互联网研究院有限公司 | 一种纳米级α-氧化铝复合环氧树脂绝缘材料及其制备方法 |
KR102126847B1 (ko) * | 2018-09-12 | 2020-06-25 | 주식회사 케이씨씨 | 에폭시 수지 조성물 |
WO2023162928A1 (ja) * | 2022-02-22 | 2023-08-31 | 積水化学工業株式会社 | 樹脂組成物及び半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009031536A1 (ja) * | 2007-09-05 | 2009-03-12 | Sekisui Chemical Co., Ltd. | 絶縁シート及び積層構造体 |
JP2010205498A (ja) * | 2009-03-02 | 2010-09-16 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012067221A (ja) * | 2010-09-24 | 2012-04-05 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012067220A (ja) * | 2010-09-24 | 2012-04-05 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012077172A (ja) * | 2010-09-30 | 2012-04-19 | Sekisui Chem Co Ltd | 樹脂組成物、樹脂シート及び積層構造体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101755328B (zh) * | 2007-07-19 | 2011-08-31 | 积水化学工业株式会社 | 电子器件用胶粘剂 |
CN101796106B (zh) * | 2007-09-05 | 2012-10-10 | 积水化学工业株式会社 | 绝缘片及层压结构体 |
-
2015
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009031536A1 (ja) * | 2007-09-05 | 2009-03-12 | Sekisui Chemical Co., Ltd. | 絶縁シート及び積層構造体 |
JP2010205498A (ja) * | 2009-03-02 | 2010-09-16 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012067221A (ja) * | 2010-09-24 | 2012-04-05 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012067220A (ja) * | 2010-09-24 | 2012-04-05 | Sekisui Chem Co Ltd | 絶縁シート及び積層構造体 |
JP2012077172A (ja) * | 2010-09-30 | 2012-04-19 | Sekisui Chem Co Ltd | 樹脂組成物、樹脂シート及び積層構造体 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181737A1 (ja) * | 2017-03-30 | 2018-10-04 | 味の素株式会社 | ペースト状樹脂組成物 |
CN110352219A (zh) * | 2017-03-30 | 2019-10-18 | 味之素株式会社 | 糊状树脂组合物 |
KR20190127770A (ko) * | 2017-03-30 | 2019-11-13 | 아지노모토 가부시키가이샤 | 페이스트상 수지 조성물 |
JPWO2018181737A1 (ja) * | 2017-03-30 | 2020-02-13 | 味の素株式会社 | ペースト状樹脂組成物 |
JP7056649B2 (ja) | 2017-03-30 | 2022-04-19 | 味の素株式会社 | ペースト状樹脂組成物 |
KR102561855B1 (ko) * | 2017-03-30 | 2023-08-02 | 아지노모토 가부시키가이샤 | 페이스트상 수지 조성물 |
JP2019011406A (ja) * | 2017-06-29 | 2019-01-24 | 京セラ株式会社 | 粉粒状半導体封止用樹脂組成物及び半導体装置 |
JP7002866B2 (ja) | 2017-06-29 | 2022-01-20 | 京セラ株式会社 | 粉粒状半導体封止用樹脂組成物及び半導体装置 |
WO2020184324A1 (ja) * | 2019-03-08 | 2020-09-17 | 株式会社Adeka | 繊維強化プラスチック用樹脂組成物、及び該組成物を含有する繊維強化プラスチック |
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