WO2016070542A1 - 阵列基板、液晶显示面板及显示装置 - Google Patents

阵列基板、液晶显示面板及显示装置 Download PDF

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Publication number
WO2016070542A1
WO2016070542A1 PCT/CN2015/074455 CN2015074455W WO2016070542A1 WO 2016070542 A1 WO2016070542 A1 WO 2016070542A1 CN 2015074455 W CN2015074455 W CN 2015074455W WO 2016070542 A1 WO2016070542 A1 WO 2016070542A1
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WIPO (PCT)
Prior art keywords
array substrate
polarizing film
wire grid
grid polarizing
disposed
Prior art date
Application number
PCT/CN2015/074455
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English (en)
French (fr)
Inventor
李文波
Original Assignee
京东方科技集团股份有限公司
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Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP15790436.8A priority Critical patent/EP3217213B1/en
Priority to US14/771,354 priority patent/US9880414B2/en
Publication of WO2016070542A1 publication Critical patent/WO2016070542A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133548—Wire-grid polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133565—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements inside the LC elements, i.e. between the cell substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136295—Materials; Compositions; Manufacture processes
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • Embodiments of the present invention relate to an array substrate, a liquid crystal display panel, and a display device.
  • the liquid crystal display panel is mainly composed of an array substrate, a counter substrate, and liquid crystal molecules between the array substrate and the opposite substrate.
  • the array substrate and the opposite substrate are paired, and then the polarizing plates are respectively pasted on the upper and lower surfaces of the liquid crystal display panel, and finally A backlight module is added to the array substrate side of the liquid crystal display panel to form a display panel.
  • the embodiment of the invention provides an array substrate, a liquid crystal display panel and a display device, which are used for thinning the thickness of the display panel, reducing the production cost, and simplifying the production process.
  • At least one embodiment of the present invention provides an array substrate, including: a substrate substrate; data lines and gate lines that are disposed on the substrate substrate, and are defined by the data lines and the gate lines on the array substrate a pixel region arranged in an array; a wire grid polarizing film disposed in each of the pixel regions for converting transmitted natural light into linearly polarized light; wherein the wire grid polarized light in each of the pixel regions
  • the film has a grating structure.
  • the grating structure may be constituted by metal thin wires arranged in a line.
  • the grating pitch in the grating structure is less than half the minimum wavelength in visible light.
  • the grating pitch is from 60 nm to 100 nm.
  • the wire grid polarizing film is disposed in the same layer as the data line or the gate line and is insulated from each other.
  • the wire grid polarizing film is multiplexed as a pixel electrode in each of the pixel regions, and is disposed in The drain of the thin film transistor at the intersection of the data line and the gate line is electrically connected.
  • the wire grid polarizing film is multiplexed as a pixel electrode and a common electrode of the interdigitated structure in each of the pixel regions; wherein a wire grid polarizing film as a pixel electrode is multiplexed and disposed on the data line and The drains of the thin film transistors at the intersections of the gate lines are electrically connected.
  • the drain is disposed in the same layer as the data line.
  • the wire grid polarizing film multiplexed as the pixel electrode is disposed in the same layer as the data line, or the wire grid polarizing film multiplexed as the pixel electrode and the common electrode of the interdigitated structure is disposed in the same layer as the data line.
  • a common electrode is disposed above the film layer where the data line is located.
  • a transparent metal oxide conductive layer is disposed on the wire grid polarizing film.
  • the transparent metal oxide conductive layer conforms to the pattern of the wire grid polarizing film.
  • the wire grid polarizing film is disposed in the same layer as the gate line, and the wire grid polarizing film is multiplexed as a common electrode in each of the pixel regions.
  • a pixel electrode is further disposed in each of the pixel regions; and the wire grid polarizing film is electrically connected to the pixel electrode in each of the pixel regions.
  • the array substrate further includes: a common electrode line disposed in the same layer and extending in the same direction as the gate line; and the wire grid polarizing film is electrically connected to the common electrode line in each of the pixel regions.
  • the embodiment of the invention further provides a liquid crystal display panel, comprising: an opposite opposite substrate and an array substrate, and a liquid crystal layer filled between the array substrate and the opposite substrate; wherein the array substrate is Any of the above array substrates provided by the embodiments of the invention.
  • an upper polarizer is disposed on a side of the opposite substrate away from the array substrate; for example, an extending direction of a grating structure of the wire grid polarizing film in the array substrate and light transmission of the upper polarizer
  • the axis directions are parallel to each other.
  • the embodiment of the present invention further provides a display device, including any of the above liquid crystal display panels provided by the embodiments of the present invention.
  • FIG. 1 is a top plan view of an array substrate according to an embodiment of the present invention.
  • 3a and 3b are schematic structural views of the second embodiment
  • Embodiment 4 is a schematic structural view of Embodiment 3.
  • FIG. 5 is a schematic structural diagram of a liquid crystal display panel according to an embodiment of the present invention.
  • FIG. 1 is a top plan view of an array substrate according to an embodiment of the present invention
  • the array substrate includes a substrate 001 and a data line 002 and a gate line 003 disposed on the substrate 001; and the data line 002 and the array substrate Gate line 003 defines a plurality of pixel regions arranged in an array.
  • Fig. 1 shows only the components in one pixel region, and a wire grid polarizing film 004 for converting transmitted natural light into linearly polarized light is further provided in each pixel region.
  • the wire grid polarizing film 004 in each pixel region has a grating structure.
  • the wire grid polarizing film 004 generally adopts a line of metal thin wires to form a grating structure.
  • the electric field drives the free electrons to consume electric energy along the extending direction of the metal thin wires, and the electric field perpendicular to the metal thin wires is not absorbed. . Therefore, the light component perpendicular to the metal thin line direction is transmitted, and the light component parallel to the metal thin wire is absorbed, and finally the natural light passing through the wire grid polarizing film 004 becomes linearly polarized light.
  • a wire grid polarizing film can be formed in each pixel region inside the array substrate to achieve the purpose of converting the transmitted natural light into linearly polarized light.
  • Embodiments of the present invention can make an array while ensuring that the liquid crystal display panel can be normally displayed.
  • a wire grid polarizing film functioning as a polarizer is formed, which eliminates the process of separately attaching the polarizer after the box, which can improve production efficiency, save production cost, and also contribute to thinning the overall thickness of the display panel. .
  • the wavelength of visible light is between 400 nm and 800 nm.
  • the grating pitch a in the grating structure is smaller than half of the minimum wavelength in visible light.
  • the grating pitch a in the wire grid polarizing film 004 is set to be 200 nm or less.
  • the grating pitch a may be set at 60 nm to 100 nm.
  • the grating structure of the wire grid polarizing film 004 in the array substrate provided by the embodiment of the present invention can be formed by a process of coating photoresist, exposure development, etching, etc., for example, exposure and development can be completed by interference exposure of a laser. That is, the laser beam of a specific wavelength is used to illuminate the photoresist from two directions of the angle ⁇ to form an interference fringe for exposure, and by changing ⁇ , an uneven lattice structure having various pitches in the wavelength range of the laser used can be obtained, that is, a grating structure is formed.
  • the grating structure of the wire grid polarizing film 004 can also be formed by nanoimprinting, which will not be described in detail herein.
  • the wire grid polarizing film 004 used as the polarizing plate is generally made of a metal material, and the wire grid polarizing film 004 disposed in each pixel region is generally associated with each pixel region.
  • the effective display area coincides. Therefore, the wire grid polarizing film 004 and the data line 002 and the gate line 003 do not overlap each other.
  • the wire grid polarizing film 004 can be disposed in the same layer as the data line 002 or the gate line 003 and insulated from each other, so that the grid pattern polarized light can be realized without adding a new patterning process to the original array substrate fabrication process.
  • the production of film 004 saves production cost and production efficiency.
  • the wire grid polarizing film 004 in the array substrate provided by the embodiment of the present invention can be multiplexed into a pixel electrode, a common electrode or a storage capacitor in addition to being used as a polarizer.
  • the multiplexing function of the wire grid polarizing film 004 will be described below by way of specific examples.
  • the pixel electrode and the wire grid polarizing film are multiplexed in the array substrate.
  • the wire grid polarizing film 004 is multiplexed as a pixel electrode in each pixel region, which is electrically connected to the drain 005 of the thin film transistor disposed at the intersection of the data line 002 and the gate line 003, and the drain 005 is generally connected to the data line 002.
  • same layer setting is electrically connected to the drain 005 of the thin film transistor disposed at the intersection of the data line 002 and the gate line 003, and the drain 005 is generally connected to the data line 002.
  • the wire grid polarizing film 004 as the pixel electrode is formed in the same layer as the drain electrode 005 of the thin film transistor, so that the two can be directly electrically connected.
  • the wire grid polarizing film 004 is disposed in the same layer as the gate line 003, as shown in FIG. 2b, at this time, the wire grid polarizing film 004 as a pixel electrode is formed in the same layer as the gate electrode 006 of the thin film transistor, and is leaked.
  • the poles 005 are not in the same film layer, so it is necessary to electrically connect the two through the via holes.
  • the wire grid polarizing film 004 as a pixel electrode is disposed to be formed simultaneously with the data line 002 or the gate line 003, and the usual separate formation at the drain can be omitted.
  • FIG. 2a and FIG. 2b in the present embodiment are described by taking an ADS type array substrate as an example. Therefore, a common electrode 007 is disposed above the film layer where the data line 002 is located, and the common electrode 007 is connected to the common electrode line 008 through the via hole, and the common electrode line 008 is generally disposed in the same layer as the gate line 003.
  • the wire grid polarizing film 004 is formed using an easily oxidizable metal such as Al
  • the common electrode 007 disposed above prevents the wire grid polarizing film 004 from being oxidized. Therefore, it is not necessary to separately provide a protective layer for protecting the wire grid polarizing film 004 in the array substrate of the ADS mode.
  • a transparent metal oxide conductive layer 009 may be disposed on the wire grid polarizing film 004 in each pixel region, as shown in FIG. 2c, for example. ITO film layer.
  • the transparent metal oxide conductive layer 009 disposed on the wire-gate polarizing film 004 needs to be broken in each pixel region, it is inevitable to pattern the added transparent metal oxide conductive layer 009, which increases the array.
  • the production process of the substrate In order to avoid increasing the production process of the array substrate, for example, the pattern of the transparent metal oxide conductive layer 009 and the wire grid polarizing film 004 may be set to be uniform in each pixel region, as shown in FIG. 2d. Thus, the pattern of the transparent metal oxide conductive layer 009 and the wire grid polarizing film 004 can be simultaneously formed by one patterning process without increasing the number of use of the mask.
  • the pixel electrode and the common electrode in the array substrate in the IPS mode are multiplexed with the wire grid polarizing film.
  • the pixel electrode and the common electrode in each pixel unit are arranged in the same layer in the same manner.
  • the wire grid polarizing film 004 multiplexes the pixel electrode and the common electrode as the interpolated structure in each pixel region; multiplexes the drain of the wire grid polarizing film 004 as the pixel electrode and the thin film transistor disposed at the intersection of the data line 002 and the gate line 003
  • the pole 005 is electrically connected, and the drain 005 is disposed in the same layer as the data line 002.
  • the wire grid polarizing film 004 as the pixel electrode and the common electrode is the same as the drain 005 of the thin film transistor.
  • the layer is formed. Therefore, the portion a of the wire grid polarizing film 004 as the pixel electrode can be directly electrically connected to the drain electrode 005, and the portion b of the wire grid polarizing film 004 as the common electrode needs to be connected to the common electrode line 008 through the via hole, and the common electrode Line 008 is disposed in the same layer as gate line 003 and gate 006.
  • the wire grid polarizing film 004 as the pixel electrode and the common electrode is formed in the same layer as the gate electrode 006 of the thin film transistor. . Therefore, the portion of the wire grid polarizing film 004 as the pixel electrode needs to be electrically connected to the drain electrode 005 through the via hole, and the portion b of the wire grid polarizing film 004 as the common electrode is directly connected to the common electrode line 008, and the common electrode line 008 and the gate electrode are connected.
  • Line 003 and gate 006 are arranged in the same layer.
  • the wire grid polarizing film 004 as the pixel electrode and the common electrode is disposed to be formed simultaneously with the data line 002 or the gate line 003, and the formation can be omitted.
  • the pixel electrode and the common electrode above the drain can save the number of masks used and the manufacturing process.
  • the oxide conductive layer may be added in the same manner as in the first embodiment, that is, in each pixel region, on the wire grid polarizing film 004.
  • a transparent metal oxide conductive layer such as an ITO film layer is provided.
  • the pattern of the transparent metal oxide conductive layer and the wire grid polarizing film 004 may be set to be uniform in each pixel region.
  • the common electrode and the wire grid polarizing film are multiplexed in the array substrate.
  • the wire grid polarizing film 004 may be disposed in the same layer as the gate line 003, and the wire grid polarizing film 004 may be multiplexed as a common electrode in each pixel region.
  • the wire grid polarizing film 004 as a common electrode is disposed at the same time as the gate line 003 and the gate electrode 006, and the formation can be omitted.
  • the common electrode above the pixel electrode can save the number of masks used and the manufacturing process.
  • the wire grid polarizing film may be connected to the pixel electrode or may be connected to the common electrode line as a part of the storage capacitor.
  • the wire grid polarizing film 004 can be electrically connected to the pixel electrode in each pixel region, thereby forming a part of the storage capacitor to increase the storage capacitance, thereby facilitating the device to improve display resolution.
  • the common electrode line and the gate line are disposed in the same layer and the same direction of extension, the wire grid polarizing film 004 can be electrically connected to the common electrode line in each pixel region, thereby forming a part of the storage capacitor.
  • the device is improved in display resolution.
  • the embodiment of the present invention further provides a liquid crystal display panel. As shown in FIG. 5, the opposite substrate 100 and the array substrate 200 are disposed, and the liquid crystal layer 300 is filled between the array substrate 200 and the opposite substrate 100.
  • the array substrate 200 is any one of the above array substrates provided by the embodiments of the present invention.
  • the opposite substrate 100 is a color filter substrate, and the color filter unit corresponding to the pixel region on the array substrate 200 may further include a black matrix or the like.
  • the upper polarizer 400 is disposed on a side of the opposite substrate 100 away from the array substrate 200.
  • the extending direction of the grating structure of the wire grid polarizing film 004 in the array substrate 200 and the light transmitting axis direction of the upper polarizer 400 are parallel to each other, that is, the linearly polarized light that can pass through the wire grid polarizing film 004 in the array substrate 200.
  • the linearly polarized light that can pass through the upper polarizing plate 400 is perpendicular to each other.
  • a backlight module disposed outside the array substrate is generally included, and the backlight module includes an LED lamp assembly 500, a reflector 600, and a guide.
  • the light panel 700 is composed of, of course, other components, and is not limited herein.
  • the embodiment of the present invention further provides a display device, including any of the above liquid crystal display panels provided by the embodiments of the present invention.
  • the display device can be any product or component having a display function, such as a mobile phone, a watch, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a mobile phone, a watch, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • An array substrate, a liquid crystal display panel, and a display device provided by the embodiments of the present invention use a wire grid polarizing film instead of a normal polarizer attached to the outside of the array substrate in each pixel region inside the array substrate.
  • the wire grid polarizing film disposed in each pixel region adopts a grating pitch smaller than the minimum in visible light
  • a half-wavelength grating structure can convert the transmitted natural light into linearly polarized light.
  • the embodiment of the present invention can form a wire grid polarizing film functioning as a polarizer during the process of fabricating the array substrate, which can save the polarizing film separately after the box is attached. The process improves production efficiency, saves production costs, and also facilitates thinning of the overall thickness of the display panel.

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Abstract

一种阵列基板、液晶显示面板及显示装置，该阵列基板包括：衬底基板(001)，位于所述衬底基板(001)上交叉而置的数据线(002)和栅线(003)，在所述阵列基板(001)上由所述数据线(002)和所述栅线(003)限定出多个呈阵列排列的像素区，以及设置在各所述像素区内的用于将透过的自然光变为线偏振光的线栅偏光膜(004)；其中，在各所述像素区内的所述线栅偏光膜(004)具有光栅结构线栅偏光膜起到偏光片作用，由此可以省去对盒之后单独贴覆偏光片的工序，可以提高生产效率，节省生产成本，并且也利于减薄显示面板的整体厚度。

Description

阵列基板、液晶显示面板及显示装置 技术领域
本发明的实施例涉及一种阵列基板、液晶显示面板及显示装置。
背景技术
液晶显示面板主要由阵列基板、对向基板以及位于阵列基板和对向基板之间的液晶分子组成。在制作过程中，在分别制作了阵列基板和对向基板上的各膜层之后，将阵列基板和对向基板进行对盒，之后在液晶显示面板的上下两个表面分别贴覆偏光片，最后在液晶显示面板的阵列基板一侧加装背光模组形成显示面板。
可以看出，上述形成液晶显示面板的生产工艺较为繁琐，需要在对盒后分别进行偏光片的贴覆，不利于提高生产效率。此外，在贴覆偏光片时需要分别设置贴膜机，这也会增加生产成本。最后，贴覆在显示面板外侧的偏光片具有一定的厚度，会限制形成的液晶显示面板整体厚度，不利于器件的轻薄化发展。
发明内容
本发明实施例提供一种阵列基板、液晶显示面板及显示装置，用以减薄显示面板的厚度、降低生产成本，简化生产工艺。
本发明至少一实施例提供一种阵列基板，包括：衬底基板；位于所述衬底基板上交叉而置的数据线和栅线，在所述阵列基板上由数据线和栅线限定出多个呈阵列排列的像素区；设置在各所述像素区内的用于将透过的自然光变为线偏振光的线栅偏光膜；其中，在各所述像素区内的所述线栅偏光膜具有光栅结构。
例如，可采用线状排列的金属细线构成所述光栅结构。
例如，所述光栅结构中的光栅间距小于可见光中最小波长的一半。
例如，所述光栅间距为60nm-100nm。
例如，所述线栅偏光膜与所述数据线或所述栅线同层设置且相互绝缘。
例如，在各所述像素区内所述线栅偏光膜复用作为像素电极，与设置在 所述数据线和所述栅线交叉处的薄膜晶体管的漏极电性相连。
例如，在各所述像素区内所述线栅偏光膜复用作为插指结构的像素电极和公共电极；其中，复用作为像素电极的线栅偏光膜与设置在所述数据线和所述栅线交叉处的薄膜晶体管的漏极电性相连。
例如，所述漏极与所述数据线同层设置。
例如，复用作为像素电极的线栅偏光膜与数据线同层设置，或复用作为插指结构的像素电极和公共电极的线栅偏光膜与数据线同层设置。
例如，在数据线所在膜层上方设置有公共电极。
例如，在各所述像素区内，在所述线栅偏光膜上设置有透明金属氧化物导电层。
例如，在各所述像素区内，所述透明金属氧化物导电层与所述线栅偏光膜的图案一致。
例如，所述线栅偏光膜与所述栅线同层设置，在各所述像素区内所述线栅偏光膜复用作为公共电极。
例如，在各所述像素区内还设置有像素电极；在各所述像素区内所述线栅偏光膜与所述像素电极电性相连。
例如，所述阵列基板还包括：与所述栅线同层设置且延伸方向相同的公共电极线；在各所述像素区内所述线栅偏光膜与所述公共电极线电性相连。
本发明实施例还提供一种液晶显示面板，包括：相对而置的对向基板和阵列基板，以及填充在所述阵列基板和对向基板之间的液晶层；其中，所述阵列基板为本发明实施例提供的上述任一阵列基板。
例如，在所述对向基板远离所述阵列基板的一侧设置有上偏光片；例如，所述阵列基板中的线栅偏光膜的光栅结构的延伸方向与所述上偏光片的光透过轴方向相互平行。
本发明实施例还提供一种显示装置，包括本发明实施例提供的上述任一液晶显示面板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图1为本发明实施例提供的阵列基板的俯视图；
图2a-图2d分别为实施例一的结构示意图；
图3a和图3b分别为实施例二的结构示意图；
图4为实施例三的结构示意图；
图5为本发明实施例提供的液晶显示面板的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
下面结合附图，对本发明实施例提供的阵列基板、液晶显示面板及显示装置的具体实施方式进行详细地说明。
附图中各层薄膜厚度和区域形状不反映阵列基板的真实比例，目的只是示意说明本发明实施例的内容。
图1为本发明实施例提供的阵列基板的俯视图，该阵列基板包括衬底基板001和位于衬底基板001上交叉而置的数据线002和栅线003；在阵列基板上由数据线002和栅线003限定出多个呈阵列排列的像素区。图1仅示出了一个像素区内的各部件，在各像素区内还设置了用于将透过的自然光变为线偏振光的线栅偏光膜004。
在各像素区内的线栅偏光膜004具有光栅结构。
例如，线栅偏光膜004一般采用线状排列的金属细线构成光栅结构，沿着金属细线的延伸方向，电场会驱动自由电子从而消耗电能，而垂直于金属细线的电场不会被吸收。因此，垂直于金属细线方向的光分量透过，平行于金属细线的光分量被吸收，最终通过线栅偏光膜004的自然光变为线偏振光。因此，可以采用在阵列基板内部的各像素区内制作线栅偏光膜来代替在阵列基板外侧贴覆偏光片的方式，以实现将透过的自然光变为线偏振光的目的。在保证液晶显示面板可以正常显示的同时，本发明的实施例可以在制作阵列 基板的过程中，形成起到偏光片作用的线栅偏光膜，这省去对盒之后单独贴覆偏光片的工序，可以提高生产效率，节省生产成本，并且也利于减薄显示面板的整体厚度。
一般地，可见光的波长在400nm-800nm之间，为了保证线栅偏光膜004可以起到对自然光具有偏振作用，光栅结构中的光栅间距a要小于可见光中最小波长的一半。例如，线栅偏光膜004中的光栅间距a设置在200nm以下。例如，为了使线栅偏光膜004可以更好的将透过的自然光变为线偏振光，光栅间距a可设置在60nm-100nm。
例如，本发明实施例提供的阵列基板中的线栅偏光膜004的光栅结构可以通过涂覆光刻胶，曝光显影，刻蚀等工艺形成，例如可以利用激光的干涉曝光法完成曝光显影。即利用特定波长的激光从角度θ的两个方向照射光刻胶形成干涉条纹进行曝光，通过改变θ可以得到在使用的激光波长范围内有各种间距的凹凸格子结构，即形成光栅结构。当然，还可以通过纳米压印的方式形成线栅偏光膜004的光栅结构，在此不作详述。
例如，由于在本发明实施例提供的阵列基板中，作为偏振片使用的线栅偏光膜004一般采用金属材料制作，并且，在各像素区内设置的线栅偏光膜004一般与各像素区的有效显示区域重合。因此，线栅偏光膜004和数据线002以及栅线003均不会重合。在实际操作时，可以将线栅偏光膜004设置为与数据线002或栅线003同层设置且相互绝缘，这样可以在原有的阵列基板制作工艺上不增加新的构图工艺而实现线栅偏光膜004的制作，节省生产成本和生产效率。
在此基础上，本发明实施例提供的阵列基板中的线栅偏光膜004除了作为偏光片使用，还可以复用为像素电极、公共电极或用于存储电容。下面通过具体几个实例说明线栅偏光膜004的复用功能。
实施例一
在本实施例中，如图2a和图2b所示，在阵列基板中将像素电极和线栅偏光膜进行复用。例如，在各像素区内线栅偏光膜004复用作为像素电极，其与设置在数据线002和栅线003交叉处的薄膜晶体管的漏极005电性相连，该漏极005一般与数据线002同层设置。
例如，在将线栅偏光膜004设置为与数据线002同层设置时，如图2a 所示，此时，作为像素电极的线栅偏光膜004由于与薄膜晶体管的漏极005同层制作，因此，两者可以直接电性相连。在将线栅偏光膜004设置为与栅线003同层设置时，如图2b所示，此时，作为像素电极的线栅偏光膜004由于与薄膜晶体管的栅极006同层制作，与漏极005不在同一膜层，因此需要通过过孔使两者电性相连。
例如，在制作图2a和图2b所示结构的阵列基板时，将作为像素电极的线栅偏光膜004设置为与数据线002或栅线003同时制作，可以省去通常的单独形成在漏极之上的像素电极。因此，可以节省掩膜板使用数量以及制作工艺。
进一步地，在本实施例中的图2a和图2b是以ADS型阵列基板为例进行说明的。因此，在数据线002所在膜层上方还会设置有公共电极007，公共电极007通过过孔与公共电极线008连接，公共电极线008一般与栅线003同层设置。若采用易氧化的金属例如Al制作线栅偏光膜004时，则设置在上方的公共电极007可防止线栅偏光膜004被氧化。因此，在ADS模式的阵列基板中不用单独设置保护线栅偏光膜004的保护层。然而，TN模式的阵列基板，将复用作为像素电极的线栅偏光膜与数据线同层设置时，线栅偏光膜004之上没有公共电极的保护，容易被氧化。因此，为了更好的防止制作出的线栅偏光膜004被氧化，例如，还可以在各像素区内，如图2c所示，在线栅偏光膜004上设置透明金属氧化物导电层009，例如ITO膜层。进一步地，由于在线栅偏光膜004上设置的透明金属氧化物导电层009需要在各像素区断开，因此，不可避免的需要对增加的透明金属氧化物导电层009进行构图，这会增加阵列基板的生产工序。为了避免增加阵列基板的生产工序，例如，可以在各像素区内，将透明金属氧化物导电层009与线栅偏光膜004的图案设置为一致，如图2d所示。这样可以通过一次构图工艺，同时形成透明金属氧化物导电层009与线栅偏光膜004的图案，不会增加掩膜板的使用数量。
实施例二
在本实施例中，如图3a和图3b所示，将IPS模式下的阵列基板中的像素电极和公共电极与线栅偏光膜进行复用。例如，在IPS模式下的阵列基板结构中，每个像素单元内像素电极和公共电极成插指结构同层设置。因此， 在各像素区内线栅偏光膜004复用作为插指结构的像素电极和公共电极；复用作为像素电极的线栅偏光膜004与设置在数据线002和栅线003交叉处的薄膜晶体管的漏极005电性相连，漏极005与数据线002同层设置。
例如，在将线栅偏光膜004设置为与数据线002同层设置时，如图3a所示，此时，作为像素电极和公共电极的线栅偏光膜004由于与薄膜晶体管的漏极005同层制作，因此，线栅偏光膜004作为像素电极的部分a可以直接和漏极005电性相连，线栅偏光膜004作为公共电极的部分b需要通过过孔与公共电极线008连接，公共电极线008与栅线003、栅极006同层设置。在将线栅偏光膜004设置为与栅线003同层设置时，如图3b所示，此时，作为像素电极和公共电极的线栅偏光膜004由于与薄膜晶体管的栅极006同层制作。因此，线栅偏光膜004作为像素电极的部分a需要通过过孔与漏极005电性相连，线栅偏光膜004作为公共电极的部分b直接与公共电极线008连接，公共电极线008与栅线003、栅极006同层设置。
例如，在制作图3a和图3b所示结构的IPS型阵列基板时，将作为像素电极和公共电极的线栅偏光膜004设置为与数据线002或栅线003同时制作，可以省去单独形成在漏极之上的像素电极和公共电极，可以节省掩膜板使用数量以及制作工艺。
进一步地，在将复用作为像素电极和公共电极的线栅偏光膜004与数据线002同层设置时，线栅偏光膜004之上没有保护容易被氧化。因此，为了更好的防止制作出的线栅偏光膜004被氧化，例如，还可以和实施例一中采用相同的方式增加氧化物导电层，即在各像素区内，在线栅偏光膜004上设置透明金属氧化物导电层，例如ITO膜层。同样，为了避免增加阵列基板的生产工序，例如，还可以在各像素区内，将透明金属氧化物导电层与线栅偏光膜004的图案设置为一致。
实施例三
在本实施例中，如图4所示，在阵列基板中将公共电极和线栅偏光膜进行复用。例如，可以将线栅偏光膜004与栅线003同层设置，在各像素区内线栅偏光膜004复用作为公共电极使用。
例如，在制作图4所示结构的ADS型阵列基板时，将作为公共电极的线栅偏光膜004设置为与栅线003和栅极006同时制作，可以省去单独形成 在像素电极之上的公共电极，可以节省掩膜板使用数量以及制作工艺。
实施例四
在本实施例中，线栅偏光膜可以与像素电极连接，也可以与公共电极线连接作为存储电容的一部分。
例如，在各像素区内单独设置有像素电极时，在各像素区内线栅偏光膜004可以与像素电极电性相连，从而构成存储电容的一部分，以增大存储电容，有利于器件提高显示分辨率；或者，在阵列基板中公共电极线与栅线同层设置且延伸方向相同时，可以在各像素区内将线栅偏光膜004与公共电极线电性相连，从而构成存储电容的一部分，以增大存储电容，有利于器件提高显示分辨率。
本发明实施例还提供一种液晶显示面板，如图5所示，包括相对而置的对向基板100和阵列基板200，以及填充在阵列基板200和对向基板100之间的液晶层300。
该阵列基板200为本发明实施例提供的上述任一阵列基板。
例如，对向基板100为彩膜基板，包括与阵列基板200上的像素区对应的滤色单元，还可以包括黑矩阵等。
例如，在对向基板100远离阵列基板200的一侧设置有上偏光片400。
例如，阵列基板200中的线栅偏光膜004的光栅结构的延伸方向与上偏光片400的光透过轴方向相互平行，即能透过阵列基板200中的线栅偏光膜004的线偏振光和能透过上偏振片400的线偏振光相互垂直。
此外，在本发明实施例提供的上述液晶显示面板中，如图5所示，一般还会包含设置在阵列基板外侧的背光模组，该背光模组包括LED灯组件500、反射板600和导光板700组成，当然还可能包含其他部件，在此不做限定。
本发明实施例还提供一种显示装置，包括本发明实施例提供的上述任一液晶显示面板。该显示装置可以为：手机、手表、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述液晶显示面板的实施例，重复之处不再赘述。
本发明实施例提供的一种阵列基板、液晶显示面板及显示装置，采用在阵列基板内部的各像素区内制作线栅偏光膜代替通常的贴覆在阵列基板外侧的偏光片。在各像素区内设置的线栅偏光膜采用光栅间距小于可见光中最小 波长一半的光栅结构，可实现将透过的自然光变为线偏振光的作用。在不影响液晶显示面板正常显示的同时，本发明的实施例可以在制作阵列基板的过程中，形成起到偏光片作用的线栅偏光膜，这可省去对盒之后单独贴覆偏光片的工序，提高生产效率，节省生产成本，并且也利于减薄显示面板的整体厚度。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所附权利要求的保护范围为准。
本专利申请要求于2014年11月7日递交的中国专利申请第201410642435.6号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (18)

  1. 一种阵列基板，包括：
    衬底基板，
    位于所述衬底基板上交叉而置的数据线和栅线，在所述阵列基板上由所述数据线和所述栅线限定出多个呈阵列排列的像素区，以及
    设置在各所述像素区内的用于将透过的自然光变为线偏振光的线栅偏光膜；其中，
    在各所述像素区内的所述线栅偏光膜具有光栅结构。
  2. 如权利要求1所述的阵列基板，其中，采用线状排列的金属细线构成所述光栅结构。
  3. 如权利要求1或2所述的阵列基板，其中，所述光栅结构中的光栅间距小于可见光中最小波长的一半。
  4. 如权利要求1-3任一项所述的阵列基板，其中，所述光栅间距为60nm-100nm。
  5. 如权利要求1-4任一项所述的阵列基板，其中，所述线栅偏光膜与所述数据线或所述栅线同层设置且相互绝缘。
  6. 如权利要求1-5任一项所述的阵列基板，其中，在各所述像素区内所述线栅偏光膜复用作为像素电极，与设置在所述数据线和所述栅线交叉处的薄膜晶体管的漏极电性相连；或者，
    在各所述像素区内所述线栅偏光膜复用作为插指结构的像素电极和公共电极，复用作为像素电极的线栅偏光膜与设置在所述数据线和所述栅线交叉处的薄膜晶体管的漏极电性相连。
  7. 如权利要求6所述的阵列基板，其中，所述漏极与所述数据线同层设置。
  8. 如权利要求6或7所述的阵列基板，其中，复用作为像素电极的线栅偏光膜与数据线同层设置，或复用作为插指结构的像素电极和公共电极的线栅偏光膜与数据线同层设置。
  9. 如权利要求6-8任一项所述的阵列基板，其中，在数据线所在膜层上方设置有公共电极。
  10. 如权利要求6-8任一项所述的阵列基板，其中，在各所述像素区内，在所述线栅偏光膜上设置有透明金属氧化物导电层。
  11. 如权利要求10所述的阵列基板，其中，在各所述像素区内，所述透明金属氧化物导电层与所述线栅偏光膜的图案一致。
  12. 如权利要求1-5任一项所述的阵列基板，其中，所述线栅偏光膜与所述栅线同层设置，在各所述像素区内所述线栅偏光膜复用作为公共电极。
  13. 如权利要求1-5任一项所述的阵列基板，其中，在各所述像素区内还设置有像素电极；在各所述像素区内所述线栅偏光膜与所述像素电极电性相连。
  14. 如权利要求1-5任一项所述的阵列基板，还包括与所述栅线同层设置且延伸方向相同的公共电极线；其中，在各所述像素区内所述线栅偏光膜与所述公共电极线电性相连。
  15. 一种液晶显示面板，包括：相对而置的对向基板和阵列基板，以及填充在所述阵列基板和对向基板之间的液晶层；其中，
    所述阵列基板为如权利要求1-14任一项所述的阵列基板。
  16. 如权利要求15所述的液晶显示面板，其中，在所述对向基板远离所述阵列基板的一侧设置有上偏光片。
  17. 如权利要求16所述的液晶显示面板，其中，所述线栅偏光膜的所述光栅结构的延伸方向与所述上偏光片的光透过轴方向相互平行。
  18. 一种显示装置，包括如权利要求15-17任一项所述的液晶显示面板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11353729B2 (en) 2018-06-05 2022-06-07 Sony Semiconductor Solutions Corporation Liquid crystal display device and projection type display device

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104330915B (zh) 2014-11-07 2017-06-06 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及显示装置
CN104617114B (zh) * 2015-02-15 2018-02-13 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示装置
KR102413901B1 (ko) * 2015-04-24 2022-06-28 삼성디스플레이 주식회사 와이어 그리드 편광판 및 이를 포함하는 표시장치
CN104793418A (zh) * 2015-04-30 2015-07-22 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示装置
JP6532336B2 (ja) * 2015-07-24 2019-06-19 三菱電機株式会社 表示装置
CN104991377B (zh) * 2015-08-03 2018-01-30 京东方科技集团股份有限公司 阵列基板、液晶显示面板及显示装置
CN105116641A (zh) * 2015-09-24 2015-12-02 京东方科技集团股份有限公司 半透半反液晶显示面板及其制备方法、液晶显示装置
CN105514032A (zh) * 2016-01-11 2016-04-20 深圳市华星光电技术有限公司 Ips型tft-lcd阵列基板的制作方法及ips型tft-lcd阵列基板
KR20170136109A (ko) * 2016-05-31 2017-12-11 삼성디스플레이 주식회사 색변환 패널 및 이를 포함하는 표시 장치
KR102607407B1 (ko) * 2016-06-03 2023-11-28 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20170143054A (ko) * 2016-06-17 2017-12-29 삼성디스플레이 주식회사 액정 표시 장치
CN106154655A (zh) * 2016-08-26 2016-11-23 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置及驱动方法
CN106597762A (zh) * 2016-10-28 2017-04-26 深圳市华星光电技术有限公司 线栅偏光电极及其压印模具和制作方法、显示基板
CN106405927B (zh) * 2016-11-28 2019-07-02 深圳市华星光电技术有限公司 液晶显示装置
CN106876479B (zh) 2017-04-19 2020-03-06 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及其制备方法、显示面板
CN106932953A (zh) * 2017-05-05 2017-07-07 惠科股份有限公司 一种显示面板及显示装置
CN108873499A (zh) * 2017-05-12 2018-11-23 佳升科技有限公司 偏光结构
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CN108415192A (zh) * 2018-03-26 2018-08-17 京东方科技集团股份有限公司 一种显示基板、显示面板、显示装置及其制作方法
CN109491133A (zh) * 2018-12-21 2019-03-19 惠科股份有限公司 显示面板和显示装置
CN109728197B (zh) * 2019-01-02 2021-01-26 京东方科技集团股份有限公司 显示基板及其制备方法和显示装置
CN109557713A (zh) * 2019-01-14 2019-04-02 合肥京东方光电科技有限公司 显示基板及其制备方法、显示面板
CN110137184B (zh) 2019-05-27 2021-09-21 京东方科技集团股份有限公司 一种阵列基板、显示面板和显示装置
CN110579903B (zh) * 2019-10-17 2023-04-14 京东方科技集团股份有限公司 一种阵列基板、其制作方法、液晶显示面板及显示装置
CN111487824B (zh) * 2020-05-27 2023-10-20 京东方科技集团股份有限公司 显示组件和显示装置
CN112965281B (zh) 2021-02-10 2022-04-05 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法、液晶显示装置
CN113031351A (zh) * 2021-03-08 2021-06-25 绵阳惠科光电科技有限公司 液晶面板、显示装置及液晶面板制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080100781A1 (en) * 2006-10-26 2008-05-01 Dae Ho Choo Liquid crystal display
CN101290446A (zh) * 2008-05-16 2008-10-22 京东方科技集团股份有限公司 Tft-lcd阵列基板及其制造方法
CN101390000A (zh) * 2004-09-17 2009-03-18 明亮影像股份有限公司 微显示器
JP2010160504A (ja) * 2010-02-24 2010-07-22 Seiko Epson Corp プロジェクタ
JP5067434B2 (ja) * 2010-02-24 2012-11-07 セイコーエプソン株式会社 液晶装置、及びプロジェクタ
US20150014693A1 (en) * 2013-07-15 2015-01-15 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
CN104330915A (zh) * 2014-11-07 2015-02-04 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798464B2 (en) * 2001-05-11 2004-09-28 International Business Machines Corporation Liquid crystal display
US7480017B2 (en) * 2004-09-17 2009-01-20 Radiant Images, Inc. Microdisplay
KR20080008734A (ko) * 2006-07-21 2008-01-24 삼성전자주식회사 표시판, 표시 장치 및 이의 제조 방법
JP4778873B2 (ja) * 2006-10-20 2011-09-21 株式会社 日立ディスプレイズ 液晶表示装置
KR101307965B1 (ko) * 2007-02-16 2013-09-12 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법
GB2485307B (en) * 2008-02-28 2012-09-19 Sumitomo Chemical Co Transparent thin-film electrode
JP4640446B2 (ja) * 2008-05-26 2011-03-02 ソニー株式会社 液晶装置、カラーフィルタ基板及びアレイ基板
US20120057106A1 (en) * 2010-09-07 2012-03-08 Electronics And Telecommunications Research Institute Polarizer and liquid crystal display
KR20130039076A (ko) * 2011-10-11 2013-04-19 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101390000A (zh) * 2004-09-17 2009-03-18 明亮影像股份有限公司 微显示器
US20080100781A1 (en) * 2006-10-26 2008-05-01 Dae Ho Choo Liquid crystal display
CN101290446A (zh) * 2008-05-16 2008-10-22 京东方科技集团股份有限公司 Tft-lcd阵列基板及其制造方法
JP2010160504A (ja) * 2010-02-24 2010-07-22 Seiko Epson Corp プロジェクタ
JP5067434B2 (ja) * 2010-02-24 2012-11-07 セイコーエプソン株式会社 液晶装置、及びプロジェクタ
US20150014693A1 (en) * 2013-07-15 2015-01-15 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
CN104330915A (zh) * 2014-11-07 2015-02-04 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11353729B2 (en) 2018-06-05 2022-06-07 Sony Semiconductor Solutions Corporation Liquid crystal display device and projection type display device

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