WO2016068248A1 - 回路基板およびこれを備える電子装置 - Google Patents
回路基板およびこれを備える電子装置 Download PDFInfo
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- WO2016068248A1 WO2016068248A1 PCT/JP2015/080585 JP2015080585W WO2016068248A1 WO 2016068248 A1 WO2016068248 A1 WO 2016068248A1 JP 2015080585 W JP2015080585 W JP 2015080585W WO 2016068248 A1 WO2016068248 A1 WO 2016068248A1
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- metal wiring
- wiring layer
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- paste
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09427—Special relation between the location or dimension of a pad or land and the location or dimension of a terminal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
Definitions
- the present invention relates to a circuit board and an electronic device in which electronic components are mounted on the circuit board.
- a hole that penetrates in the thickness direction of a glass or ceramic substrate is filled with a metal that serves as an electrode, and the through hole has an opening diameter a of 80 ⁇ m to 500 ⁇ m and a thickness b of the substrate.
- the ratio a / b is 0.2 to 0.5
- the metal film C is formed on the inner wall surface with a film thickness of 0.2 ⁇ m or more in a region at least 50 ⁇ m deep from both sides of the substrate of the inner wall of the through hole.
- a substrate with a through electrode has been proposed in which the hole is filled with an electrode metal D having a melting point lower than that of the metal film C.
- the present invention has been devised to satisfy the above requirements, and provides a circuit board that has excellent heat dissipation characteristics and can be used for a long period of time, and an electronic device in which electronic components are mounted on the circuit board. It is.
- the circuit board according to the present invention includes a base made of ceramic or sapphire having a through hole penetrating from one main surface to the other main surface, a main component made of silver, and a through conductor located in the through hole in the base.
- a circuit board comprising both main surfaces of a base and a metal wiring layer located on the through conductor, and including at least one selected from Sn, Cu and Ni between the through conductor and the metal wiring layer It has the area
- the electronic device of the present invention is characterized in that an electronic component is provided on the metal wiring layer in the circuit board of the present invention having the above-described configuration.
- circuit board of the present invention has excellent heat dissipation characteristics and can withstand long-term cooling cycles.
- the electronic component on the metal wiring layer in the circuit board of the present invention having the above-described configuration can provide the performance possessed by the electronic component over a long period of time. High reliability.
- FIG. 1 is a cross-sectional view illustrating an electronic device including the circuit board according to the first embodiment
- FIG. 2 is an enlarged view of a portion S in FIG.
- the circuit board 10 of the first embodiment includes a base body 1 having a through hole penetrating from one main surface 1a to the other main surface 1b, a through conductor 2 located in the through hole in the base body 1, and both main surfaces 1a of the base body 1.
- 1b includes a metal wiring layer 3.
- FIG. 1 the example which has the two penetration conductors 2 is shown.
- 3c is formed on the metal wiring layer 3 on the one main surface 1a of the substrate 1 on which the electronic component 11 is not mounted
- 2b is formed on the through conductor 2 connected to the metal wiring layer 3
- 3d is formed on the metal wiring layer 3 on the other main surface 1b connected thereto.
- symbol is attached
- the electronic device 20 of this embodiment is equipped with the electronic component 11 on the metal wiring layer 3 in the circuit board 10 of this embodiment, and in FIG. 1, the electronic component 11 and the metal wiring layer 3c are An example in which the wires are electrically connected by bonding wires 12 is shown.
- the through conductor 2 in the circuit board 10 of the present embodiment is mainly composed of Ag.
- a main component is a component contained exceeding 50% among 100 mass% of all the components which comprise the penetration conductor 2 here.
- the metal wiring layer 3 in the circuit board 10 of the present embodiment is made of, for example, Ag, Au, or Cu as a main component.
- a main component is a component contained exceeding 50% among 100 mass% of all the components which comprise the metal wiring layer 3 here.
- the circuit board 10 of the present embodiment includes Sn, Cu, and the like between the through conductor 2 a provided in the base 1 and the metal wiring layer 3 a. It has the area
- region 6 is shown so as to have a clear boundary line. However, in practice, a clear boundary line may not be visually recognized.
- the circuit board 10 of the present embodiment can efficiently transfer the heat generated during the operation of the electronic component 11 from the metal wiring layer 3a to the metal wiring layer 3b via the region 6 and the through conductor 2. In addition to excellent heat dissipation characteristics, it can withstand long-term cooling cycles.
- the reason why the progress of cracks caused by the thermal cycle can be suppressed is because the progress of cracks can be stopped by the presence of the compound.
- the generation of cracks due to the thermal cycle can be suppressed because of the volume expansion when the compound is formed, compressive stress is applied to the Ag crystals around the compound, and due to expansion and contraction during the thermal cycle. This is because cracks are less likely to occur.
- the region 6 exists in the vicinity of the opening periphery of the through hole as shown in FIG. This is because cracks are likely to occur near the periphery of the opening of the through hole due to the cooling and heating cycle.
- the compound is, for example, an alloy of Sn and Ag in the case of Sn, an oxide containing Cu in the case of Cu, and an oxide containing Ni in the case of Ni. Since the alloy of Sn and Ag has a lower electric resistance value than the oxide containing Cu or the oxide containing Ni, the compound existing in the region 6 is an alloy of Sn and Ag. Is preferred.
- ceramics or sapphire can be used for the substrate 1 constituting the circuit board 10 of the present embodiment.
- the ceramic aluminum oxide ceramics, zirconium oxide ceramics, composite ceramics of aluminum oxide and zirconium oxide, silicon nitride ceramics, aluminum nitride ceramics, silicon carbide ceramics, or mullite ceramics can be used.
- the base 1 is preferably made of ceramics in that it is inexpensive and relatively easy to process, but has excellent mechanical properties, and more preferably aluminum oxide ceramics. It is.
- the metal wiring layer 3 constituting the circuit board 10 of the present embodiment is composed of, for example, any one of Ag, Au, and Cu as a main component. From this point of view, the main component is preferably made of Ag.
- the metal wiring layer 3 preferably contains a glass component such as SiO 2 , Bi 2 O 3 , B 2 O 3 , ZnO.
- a glass component such as SiO 2 , Bi 2 O 3 , B 2 O 3 , ZnO.
- Mg, Ca, Zr, Ti, Mo, etc. may be included as other components.
- a compound containing at least one selected from Sn, Cu and Ni exists throughout the entire through conductor 2.
- a compound containing at least one selected from Sn, Cu, and Ni is formed. Due to the volume expansion, the contact area with the inner wall of the through-hole increases, so that the heat dissipation characteristics are excellent.
- a compressive stress is applied to the Ag crystals around the compound, so that cracks are less likely to occur when subjected to a thermal cycle.
- FIG. 3 is an enlarged view corresponding to the S part of FIG. 1 in the circuit board of the second embodiment. As shown in FIG. 3, it is preferable that the region 6 is located closer to the metal wiring layer 3 a than the one main surface 1 a of the substrate 1.
- the region 6 is configured to be located closer to the metal wiring layer 3a side than the one main surface 1a of the substrate 1, the region 6 is shown in FIG. 3 from the viewpoint of thermal conductivity and discoloration during plating.
- line E surface line of the one main surface 1a of the substrate 1
- line D surface line of the metal wiring layer 3 shown in FIG. It is preferable that it exists in the range.
- the average crystal grain size in the compound is preferably 10 ⁇ m or more and 30 ⁇ m or less. When such a range is satisfied, it is possible to apply a larger compressive stress to the surrounding Ag crystal while maintaining the heat dissipation characteristics, so that the circuit board 10 that can withstand a thermal cycle for a longer period of time is obtained.
- a surface layer made of Au is located on the metal wiring layer 3.
- the adhesion process with the bonding wire 12 is facilitated, and the metal wiring layer 3 can be prevented from being sulfidized and corroded.
- the circuit board 10 is cut so as to pass through the center of the axis of the through conductor 2 and polished by a cross section polisher (CP), and a cross section as shown in FIG.
- CP cross section polisher
- the observation surface is enlarged at a magnification of 1000 to 3000 times to observe an image, or confirmed by mapping with an EPMA (electron beam microanalyzer). Good.
- SEM electron scanning microscope
- the metal wiring layer 3, the region 6, and the penetrating conductor 2 are hit by the difference in location, the difference in content (element), and the like.
- the metal wiring layer 3 and the through conductor 2 are Ag and an Ag—Sn alloy is present in the region 6, the metal wiring layer 3, the region 6, and the through conductor 2 are discriminated based on Sn. Can do.
- an average value with the size of the equivalent circle diameter as the crystal grain size can be calculated for the compound confirmed by the above-described method.
- Image analysis software for example, ImageJ
- ImageJ may be used.
- the substrate 1 is made of an aluminum oxide ceramic
- a powder of aluminum oxide (Al 2 O 3 ) and a powder of silicon oxide (SiO 2 ), magnesium oxide (MgO), calcium oxide (CaO) or the like as a sintering aid are used. What is necessary is just to produce by the well-known shaping
- the base 1 is made to contain barium oxide (BaO) or zirconium oxide (ZrO 2 ), thereby providing a base.
- the reflectance of 1 can be improved.
- the formed body may be formed by punching, blasting or laser processing, or the sintered body may be processed by blasting or laser.
- a metal paste for forming the through conductor 2 and the metal wiring layer 3 is prepared.
- the main component of the metal wiring layer 3 is Ag will be described.
- the metal paste for forming the through conductor 2 and the metal wiring layer 3 is made of Ag powder having an average particle size of 0.5 ⁇ m or more and 10 ⁇ m or less, glass powder, and an organic vehicle.
- the Ag powder for example, a powder having an average particle size of 0.5 ⁇ m or more and 3.5 ⁇ m or less may be prepared.
- Cu powder may be used to form the metal wiring layer 3 mainly composed of Cu
- Au powder may be used to form the metal wiring layer 3 mainly composed of Au.
- the average particle size of the glass powder is preferably 8% or more and 60% or less with respect to the average particle size of the Ag powder.
- the softening point is 600 ° C. or more and 700 ° C. or less
- the average particle size of the glass powder is 8% or more and 60% or less with respect to the average particle size of the Ag powder
- the glass powder contained in the metal paste it is easy to soften during firing and to move toward the substrate 1 side, and the bonding strength between the substrate 1 and the through conductor 2 or the metal wiring layer 3 can be improved.
- glass powder examples include R 2 O—B 2 O 3 —SiO 2 (R: alkali metal element), SiO 2 —Bi 2 O 3 —B 2 O 3 , R 2 Examples thereof include an O—SiO 2 —B 2 O 3 —Bi 2 O 3 system, an SiO 2 —ZnO—B 2 O 3 system, and an R 2 O—SiO 2 —B 2 O 3 —ZnO system.
- the organic vehicle is obtained by dissolving an organic binder in an organic solvent.
- the ratio of the organic binder to the organic solvent is 2 to 6 for the organic binder 1.
- the organic binder include acrylics such as polybutyl methacrylate and polymethyl methacrylate, celluloses such as nitrocellulose, ethyl cellulose, cellulose acetate, and butyl cellulose, polyethers such as polyoxymethylene, polybutadiene, polyisoprene, and the like. 1 type or 2 types or more selected from these polyvinyls can be used.
- the organic solvent is selected from, for example, carbitol, carbitol acetate, terpineol, metacresol, dimethylimidazole, dimethylimidazolidinone, dimethylformamide, diacetone alcohol, triethylene glycol, paraxylene, ethyl lactate, and isophorone. 1 type or 2 types or more can be mixed and used.
- the blending ratio for example, among 100% by mass of the metal paste, Ag powder is 77.0% by mass to 92.0% by mass, glass powder is 0.5% by mass to 5% by mass, and organic vehicle. May be in the range of 10 mass% or more and 20 mass% or less.
- the area paste for forming the area 6 is made of Ag powder having an average particle diameter of 0.5 ⁇ m or more and 10 ⁇ m or less and at least one selected from Sn, Cu and Ni, and an average particle diameter of 5 ⁇ m or more and 10 ⁇ m or less is added. Consists of powder and organic vehicle.
- the blending ratio for example, among 100% by mass of the region paste, Ag powder is 64.0% by mass to 81.0% by mass, and additive powder is 9.0% by mass to 16.0% by mass.
- the organic vehicle may be 10.0% by mass or more and 20.0% by mass or less.
- the metal paste is filled into the through holes of the substrate 1 by a known printing method.
- the region paste is applied on the metal paste filled in the through holes, and further, the metal paste is applied thereon by a known printing method.
- the circuit board 10 of the present embodiment can be obtained by holding and heat-treating.
- the region 6 In order to form the region 6 so as to be positioned closer to the metal wiring layer 3 side than the one main surface 1a of the base 1, after filling the metal paste so that the through conductor 2 is formed up to the peripheral edge of the through hole, After the heat treatment, the region paste is applied, and further, the metal paste to be the metal wiring layer 3 is applied thereon, and the heat treatment is performed again.
- the method for manufacturing the circuit board 10 a method for forming the region 6 so as to be positioned closer to the metal wiring layer 3 than the one main surface 1a of the base 1 will be described.
- the paste for forming the metal wiring layer 3 the above-described metal paste is used except that the glass powder is 2.0 mass% or more and 5 mass% or less.
- the through conductor paste for forming the through conductor 2 is composed of Ag powder having an average particle size larger than the average particle size used in the metal paste, and at least one selected from Sn, Cu and Ni.
- an additive powder of 5 ⁇ m or more and 10 ⁇ m or less and an organic vehicle for example, among 100% by mass of the through conductor paste, Ag powder is added by 64.0% by mass or more and 81.0% by mass or less.
- the powder is 9.0% by mass to 16.0% by mass and the organic vehicle is 10.0% by mass to 20.0% by mass.
- the through conductor paste is filled in the through holes of the substrate 1 by a known printing method.
- a metal paste is further applied thereon by a known printing method.
- the additive powder contained in the through conductor paste becomes easy to move. Then, in the course of the heat treatment conditions described above, the glass component in the metal paste forming the metal wiring layer 3 moves to the base 1 side, so that the additive powder contained in the through conductor paste forming the through conductor 2 becomes a metal It diffuses to the wiring layer 3 side. As a result, the region 6 having a compound containing at least one selected from Sn, Cu, and Ni is positioned closer to the metal wiring layer 3 than the one main surface 1a of the substrate 1.
- the metal wiring layer 3 may have a desired thickness
- printing, drying, degreasing, and baking may be repeated, or heat treatment may be performed collectively after performing the steps up to printing, drying, and degreasing multiple times.
- Cu powder or Au powder may be used instead of the Ag powder, and heat treatment may be performed at a temperature corresponding to each main component. .
- a through-conductor paste and, if necessary, a region paste are filled in the through-holes of the substrate 1 by a known printing method, and the metal paste After forming the through conductor 2 by performing heat treatment without coating, a Cu or Au metal wiring layer 3 may be formed by a known plating method or sputtering method.
- the thickness of the metal wiring layer 3 is, for example, 5 ⁇ m or more and 30 ⁇ m or less, and the metal wiring layer 3 may be formed by etching in order to reduce the pitch and the line width.
- the entire surface or a part of the surface of the metal wiring layer 3 may be subjected to gold plating.
- gold plating silver plating or nickel-gold plating may be performed.
- the through conductor 2 and the metal wiring layer 34 are formed on the single body surrounded by the dividing grooves by the above-described method using the base body 1 on which the dividing grooves are formed. If it divides
- the manufacturing method of the circuit board 10 of this embodiment is not restricted to the manufacturing method mentioned above.
- the electronic device 20 of the present embodiment can be obtained, for example, by mounting the electronic component 11 on the first metal wiring layer 3a of the circuit board 10 of the present embodiment.
- the electronic device 20 according to the present embodiment manufactured in this way can exhibit the performance possessed by the electronic component over a long period of time and has high reliability.
- Examples of the electronic component 11 mounted on the circuit board 10 include an insulated gate bipolar transistor (IGBT) element, an intelligent power module (IPM) element, and a metal oxide field effect transistor (MOSFET) element.
- IGBT insulated gate bipolar transistor
- IPM intelligent power module
- MOSFET metal oxide field effect transistor
- LED light emitting diode
- FWD free wheeling diode
- GTR giant transistor
- SBD Schottky barrier diode
- sublimation thermal printer heads or thermal inkjet printer heads These heating elements, Peltier elements, and the like can be used.
- the circuit boards with various configurations were prepared and the durability against the cooling cycle was confirmed.
- a substrate made of an aluminum oxide ceramic with a content of 96% by mass of aluminum oxide was prepared using silicon oxide and magnesium oxide as sintering aids. And the through-hole was provided with the laser so that a diameter might be set to 120 micrometers.
- glass powder might be 2.5 mass%
- organic vehicle might be 15 mass%
- the remainder might be Ag powder. And these were mixed and the paste used as a metal wiring layer was obtained.
- an Ag powder having an average particle diameter of 5 ⁇ m, an additive powder having an average particle diameter of 5 ⁇ m of the type described in Table 1 as an accessory component, and an organic vehicle were prepared.
- the additive powder was 2.5% by mass
- the organic vehicle was 15% by mass
- the balance was weighed so as to be Ag powder. And these were mixed and the paste used as a penetration conductor was obtained.
- the paste used as a penetration conductor was filled into the through-hole by the printing method, and the paste used as a metal wiring layer was printed. Then, it dried at 100 degreeC and heat-processed by hold
- Sample No. 1 was prepared by the same method as above except that the additive powder was not added, the organic vehicle was 15% by mass, and the paste was weighed so that the balance was Ag powder. .
- the paste used as the metal wiring layer used in the above method was used for the metal wiring layer and the through conductor (hereinafter referred to as paste 1). Moreover, the paste used as a penetration conductor in the said method was used for area
- Paste 1 is filled in the through-holes by a printing method, and then paste 2 is applied thereon, then paste 1 is applied thereon, then dried at 100 ° C., and dried at 100 ° C. to 850 ° C. to 900 ° C.
- a heat treatment was carried out at a maximum temperature in the range of 10 minutes.
- Sample No. 2 is Sample No. 3, Sample No. Sample No. 4 5, Sample No. Sample No. 6 7, Sample No. Sample No. 8 9, Sample No. 10 is a sample No. 10; 11, Sample No. Sample No. 12 13, Sample No. 14 is Sample No. 15 and the heat treatment temperature were matched. In this way, sample no. 2, 4, 6, 8, 10, 12, and 14 were produced.
- Each sample is cut so as to pass through the center of the axis of the through conductor, polished with a cross section polisher (CP) to obtain an observation surface, and the observation surface is enlarged at a magnification of 1000 to 3000 times.
- EPMA The presence or absence of a region where the compound exists was confirmed by mapping according to. For the sample containing Sn, a compound of Sn and Ag was present, and for the sample containing Cu or Ni, an oxide of Cu and an oxide of Ni were present, respectively. Further, the location of the region was confirmed, and the location of the region shown in FIG. 2 is shown in FIG. 2, and that shown in FIG. 3 is shown in FIG.
- the average crystal grain size of the compound was determined using image analysis software (ImageJ) that can calculate the average value using the equivalent circle diameter as the crystal grain size.
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Abstract
Description
2 :貫通導体
3 :金属配線層
6 :領域
10:回路基板
11:電子部品
12:ボンディングワイヤ
20:電子装置
Claims (6)
- 一方主面から他方主面を貫く貫通孔を備えるセラミックスまたはサファイヤからなる基体と、
主成分が銀からなり、前記基体における前記貫通孔内に位置する貫通導体と、
前記基体の両主面および前記貫通導体上に位置する金属配線層とを備える回路基板であって、
前記貫通導体と前記金属配線層との間に、Sn、CuおよびNiより選ばれる少なくとも一種を含む化合物が存在する領域を有することを特徴とする回路基板。 - 前記基体がセラミックスであり、前記金属配線層の主成分がAgからなることを特徴とする請求項1に記載の回路基板。
- 前記領域が、前記基体の主面よりも前記金属配線層側に位置していることを特徴とする請求項1または請求項2に記載の回路基板。
- 前記化合物における平均結晶粒径が10μm以上30μm以下であることを特徴とする請求項1乃至請求項3のいずれかに記載の回路基板。
- 前記金属配線層上にAuからなる表層が位置していることを特徴とする請求項1乃至請求項4のいずれかに記載の回路基板。
- 請求項1乃至請求項5のいずれかに記載の回路基板における金属配線層上に電子部品を備えることを特徴とする電子装置。
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JP2016556632A JP6298174B2 (ja) | 2014-10-29 | 2015-10-29 | 回路基板およびこれを備える電子装置 |
CN201580057752.4A CN107112291B (zh) | 2014-10-29 | 2015-10-29 | 电路基板以及具备其的电子装置 |
US15/522,322 US10147662B2 (en) | 2014-10-29 | 2015-10-29 | Circuit board and electronic device provided with same |
EP15855600.1A EP3200224B1 (en) | 2014-10-29 | 2015-10-29 | Circuit board and electronic device provided with same |
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Citations (3)
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JP2000200973A (ja) * | 1999-01-06 | 2000-07-18 | Sumitomo Metal Electronics Devices Inc | 低温焼成セラミック回路基板 |
JP2001274548A (ja) * | 2000-03-27 | 2001-10-05 | Kyocera Corp | セラミック配線基板の製造方法 |
JP2009059789A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 配線基板およびその製造方法 |
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JPS62265796A (ja) | 1986-05-14 | 1987-11-18 | 株式会社住友金属セラミックス | セラミツク多層配線基板およびその製造法 |
JP3237258B2 (ja) * | 1993-01-22 | 2001-12-10 | 株式会社デンソー | セラミック多層配線基板 |
JPH08125341A (ja) * | 1994-10-25 | 1996-05-17 | Hitachi Ltd | 電子回路装置 |
JP4158159B2 (ja) | 2004-12-06 | 2008-10-01 | 日立金属株式会社 | 貫通電極付基板およびその製造方法 |
JP2007258436A (ja) * | 2006-03-23 | 2007-10-04 | Alps Electric Co Ltd | 配線基板、及びその製造方法 |
KR20110019536A (ko) * | 2009-08-20 | 2011-02-28 | 삼성전기주식회사 | 세라믹 기판 및 그 제조방법 |
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Patent Citations (3)
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JP2000200973A (ja) * | 1999-01-06 | 2000-07-18 | Sumitomo Metal Electronics Devices Inc | 低温焼成セラミック回路基板 |
JP2001274548A (ja) * | 2000-03-27 | 2001-10-05 | Kyocera Corp | セラミック配線基板の製造方法 |
JP2009059789A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 配線基板およびその製造方法 |
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US20170358513A1 (en) | 2017-12-14 |
CN107112291B (zh) | 2020-01-03 |
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EP3200224B1 (en) | 2019-06-19 |
US10147662B2 (en) | 2018-12-04 |
EP3200224A4 (en) | 2018-02-14 |
JPWO2016068248A1 (ja) | 2017-08-03 |
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JP6298174B2 (ja) | 2018-03-20 |
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