Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
  • C03C17/366—Low-emissivity or solar control coatings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
  • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/58—After-treatment
  • C23C14/5806—Thermal treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/21—Oxides
  • C03C2217/24—Doped oxides
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/25—Metals
  • C03C2217/251—Al, Cu, Mg or noble metals
  • C03C2217/254—Noble metals
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/25—Metals
  • C03C2217/251—Al, Cu, Mg or noble metals
  • C03C2217/254—Noble metals
  • C03C2217/256—Ag
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/30—Aspects of methods for coating glass not covered above
  • C03C2218/32—After-treatment
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the present invention relates to a method and apparatus for rapid annealing of thin layers deposited on flat substrates by means of flash lamps.
• Laser annealing is used to heat thin coatings at high temperatures, on the order of several hundred degrees, while preserving the underlying substrate.
• FIG. 1 shows a Planitherm ONE ® coating after annealing with flash lamps under the following conditions: Intensity of each light pulse: 35 J / cm 2
• Periodic streaks about 2.6 cm apart, were observed which were absent from the coating directly after the Planitherme ® ONE stack was deposited.
• This solution consists in interposing between the flash lamp and the coating to anneal an opaque mask having an irradiation slot.
• an opaque mask having an irradiation slot.
• the mask and the irradiation slot must have a fixed position with respect to the flash lamp
• the frequency of the flash lamp and the speed of travel of the substrate shall be such that each point of the coating receives at least one light pulse
• the mask must be positioned as close as possible to the surface of the coating to be annealed, at most within a few millimeters of it,
• the shape and extent of the irradiation slit should be such that the mask intercepts the light of the lamp, that is, obscures the substrate, in all areas where the light intensity is less than an intensity luminous threshold, hereinafter referred to as nominal luminous intensity.
• nominal luminous intensity is the intensity of a light pulse, of a given duration, beyond which a second pulse of intensity greater than or equal to that of the first pulse and of same duration as this, does not cause a change of color in reflection of the coating.
• L ⁇ ai and bi are the coordinates in the CIELab color space of the first color and L 2 , 32 and t> 2 those of the second.
• the second pulse when the second pulse causes a significant color change ( ⁇ * 2 - ⁇ * ⁇ > 1), it is considered that the second pulse affects the color of the coating and that the light intensity is considered to be less than the nominal luminous intensity.
• the light intensities to be considered are of course those measured at the level of the work plane, that is to say at the level of the coating to be annealed.
• the light emitted by the flash lamp has, at the level of the work plane, a light intensity profile, also called a power density profile, at least one zone where the luminous intensity is greater than or equal to the nominal intensity. as defined above, and other zones, generally on the periphery of the irradiated zone, where the luminous intensity is lower than the nominal luminous intensity.
• the irradiation mask must be positioned between the lamp and the coating so as to intercept all of the light which, at the level of the coating to be annealed, has a luminous intensity lower than the nominal intensity.
• the mask may possibly intercept a small portion of the light having an intensity greater than or equal to the nominal intensity.
• the present invention relates to a surface annealing process of a coated substrate, said method comprising
• the distance between the lower face of the mask and the surface of the coating to be annealed is at most equal to 1 mm, preferably at most equal to 500 ⁇ , ideally at most equal to 100 ⁇ ,
• the shape and extent of the slot are such that the mask obscures the coating to be annealed in all areas where the light intensity which, in the absence of a mask, would reach the level of the coating to be annealed is less than a threshold light intensity, hereinafter called the nominal luminous intensity.
• flashlamp designates a single flashlamp or a set of flashlamps, for example 5 to 20 lamps, or 8 to 15 lamps, arranged preferably parallel to each other, and associated with one or more mirrors.
• a set of flash lamps and mirrors is used for example in the method disclosed in WO 2013/026817.
• the function of the mirrors is to direct all the light emitted by the lamps in the direction of the substrate and to give the luminous intensity profile a desired shape in a truncated bell with a central plateau of approximately constant intensity (less than 5%) and lateral flanks where the intensity gradually decreases.
• These mirrors can be flat mirrors or focusing mirrors.
• Flash lamps used in the present invention are generally in the form of sealed glass tubes or quartz tubes filled with a rare gas, provided with electrodes at their ends. Under the effect of a short-term electrical pulse, obtained by discharging a capacitor, the gas ionizes and produces a particularly intense incoherent light.
• the emission spectrum comprises generally at least two emission lines; it is preferably a continuous spectrum having a maximum emission in the near ultraviolet.
• the lamp is preferably a xenon lamp. It can also be a lamp with argon, helium or krypton.
• the emission spectrum preferably comprises several lines, especially at wavelengths ranging from 160 to 1000 nm.
• the duration of the light pulse is preferably in a range from 0.05 to 20 milliseconds, in particular from 0.1 to 5 milliseconds.
• the repetition rate (frequency) is preferably in a range from 0.1 to 5 Hz, in particular from 0.2 to 2 Hz.
• the lamp, or lamps is preferably disposed transversely to the longer sides of the substrate. It has a length preferably of at least 1 m, especially at least 2 m and even at least 3 m, so as to allow the treatment of large substrates.
• the capacitor is typically charged at a voltage of 500 V to 500 kV.
• the current density is preferably at least 4000 A / cm 2 .
• the total energy density emitted by the flash lamps, relative to the surface of the coating, is preferably between 1 and 100 J / cm 2 , preferably between 2 and 30 J / cm 2 , in particular between 5 and 20 J / cm 2 .
• the substrate bearing the coating to be annealed is preferably glass or glass ceramic. It is preferably transparent, colorless (clear or extra-clear glass) or colored, for example blue, gray, green or bronze.
• the glass is preferably of the silico-soda-lime type, but it may also be of borosilicate or alumino-borosilicate type glass.
• the substrate advantageously has at least one dimension greater than or equal to 1 m, or even 2 m and even 3 m.
• the thickness of the substrate generally varies between 0.1 mm and 19 mm, preferably between 0.7 and 9 mm, especially between 1 and 6 mm, or even between 2 and 4 mm.
• the material of the coating to be annealed can in principle be any material, organic or mineral, which is not destroyed by the superficial annealing treatment whose physical properties, and in particular the color, are modified following this treatment.
• the coating to be annealed preferably comprises at least one layer of a transparent conductive oxide (TCO).
• TCO transparent conductive oxide
• This oxide is preferably chosen from indium tin oxide (ITO), indium zinc oxide (IZO) and antimony or fluorine doped tin oxide (ATO). and FTO), zinc oxide doped with aluminum (AZO) and / or gallium (GZO) and / or titanium, titanium oxide doped with niobium and / or tantalum, cadmium stannate or of zinc.
• a particularly preferred oxide is tin and indium oxide, frequently referred to as "ITO".
• the atomic percentage of Sn is preferably in a range from 5 to 70%, especially from 6 to 60%, advantageously from 8 to 12%.
• ⁇ is appreciated for its high electrical conductivity, allowing the use of small thicknesses to obtain a good emissivity or resistivity level.
• the coating to be annealed comprises one or more thin layers of a metal, in particular of a noble metal, typically layers based on silver or gold, preferably at least one layer of metal. 'money.
• the physical thickness of the coating to be annealed is advantageously at least equal to 30 nm and at most equal to 5000 nm, preferably between 50 nm and 2000 nm.
• the substrate carrying the annealing coating under or before the flashlamps partially obscured by the irradiation mask is rotated.
• the flash lamps are preferably close to the coating to be annealed, advantageously located less than 20 cm, preferably less than 10 cm and in particular less than 5 cm.
• This distance the higher the luminous intensity at the level of the work surface (coating to anneal) is important for a given operating power.
• the irradiation mask comprises a slot whose longitudinal axis is perpendicular to the direction of travel of the substrate.
• the simplest form of the slot guaranteeing a homogeneous irradiation of the coating to be annealed is the rectangle.
• the slot therefore preferably has a substantially rectangular shape. More complex shapes, less preferred, are however also possible and the invention is not limited to the embodiment where the slot is a rectangle.
• An arc-like, zigzag or wavy slot would be equivalent to a rectangular slot provided that the upstream and downstream edges of the slot are parallel, allowing for the perfect juxtaposition (without vacuum) of the corresponding irradiation zones. successive light pulses.
• the substrate carrying the coating to be annealed can be set in scrolling motion using any suitable mechanical conveyor means, for example using strips, rollers, translational trays.
• the conveyor system controls and controls the speed of travel.
• the rate of travel of the substrate should be adjusted according to the frequency of the pulses and the slit width of the mask so that each point of the coating receives at least one light pulse, ie the scroll speed must be lower or equal to the L / P ratio of the width of the slot (L) to the period (P) separating two pulses.
• the running speed of the substrate For an irradiation frequency of 1 Hz and a width of the slot of 10 cm, the running speed of the substrate must thus be at most 10 cm / second.
• the running speed of the substrate is less than L / P, a certain number of points receive two light pulses (overlap area), which is not very favorable from the point of view of the energy efficiency of the process.
• overlap area The existence of a zone of recovery, relatively narrow, however ensures the continuity of the irradiated area in case of small changes in the speed of travel.
• the frequency of the flashlamp, the width of the slot and the speed of travel of the substrate are such that at least 90%, preferably at least 95%, more preferably at least 98% of the points of the coating to be annealed receive a single light pulse. In other words, at most 10%, preferably at most 5%, and more preferably at most 2% of the points of the coating receive two light pulses.
• the speed of travel of the substrate is therefore preferably between L / P and 0.9 L / P.
• the rate of travel of the substrate carrying the coating to be annealed is advantageously between 0.1 and 30 m / minute, preferably between 1 and 20 m / minute, and in particular between 2 and 10 m / minute.
• the width of the irradiation slot is advantageously between 1 and 50 cm, preferably between 5 and 20 cm.
• the length of the slot is substantially equal to the width of the coating to be annealed, namely generally at least 1 m, preferably at least 2 m, in particular at least 3 m.
• the irradiation mask must be as close as possible to the coating to be annealed, that is to say the distance between its underside and the surface of the coating to be annealed must not exceed 1 mm, preferably does not exceed 500 ⁇ , and ideally is at most equal to 100 ⁇ .
• the present invention also relates to an apparatus for the surface annealing of a substrate bearing a coating to be annealed, particularly suitable for the implementation of the method of the present application.
• the apparatus of the present invention comprises
• a mask located, in a fixed position relative to the flash lamp, between the flash lamp and the transport means, said mask comprising a slot whose longitudinal axis is perpendicular to the direction of travel of the substrate and which is positioned from whereby the light emitted by the flash lamp is projected through the slot towards the flat substrate carrying a coating to be annealed,
• the mask will preferably be made of a metallic material, typically aluminum or copper.
• the body of the mask will preferably be in contact with a cooling circuit, so as to maintain its temperature below 100 ° C., preferably below 50 ° C.
• a diffusing reflective layer for the mask, so that the intercepted light is not absorbed but diffused in order to lower the reflected light intensity and thus its dangerousness.
• the thickness of the mask at the edges of the slot must be as small as possible, preferably less than 500 ⁇ , or even less than 200 ⁇ or less than ⁇ ⁇ .
• the parts thereof that are farthest from the slot may be thicker.
• the edges of the slot can then be made bevel, so that the light is intercepted by the thinnest part.
• Figure 1 shows a photograph of a substrate bearing a Planitherme ® ONE coating irradiated under the conditions as indicated above in the absence of a mask. There are periodic horizontal streaks spaced about 2.6 cm apart.
• Figure 2 is a photograph of a Planitherme ® ONE substrate treated according to the method of the invention. The streaks visible in FIG. 1 have completely disappeared thanks to the interposition of a mask under the conditions according to the invention.
• FIG. 3 is an explanatory diagram showing the operation of the method of the present invention and, more particularly, the appropriate positioning of the irradiation mask in relation to the luminous intensity profile of the lamps.
• the annealing coating 2 is irradiated with light emitted by a set of lamps 4 and directed downwards by means of a set of mirrors 5, through a mask 3.
• the distance between the two parts of the mask 3 corresponds to the width of the longitudinal slot.
• the distance between the lower face of the mask 3 and the upper face of the annealing coating 2 is less than 1 mm.
• the intensity profile of a light pulse as it exists at the level of the coating to be annealed 2 in the absence of the mask 3.
• the mask 3 is positioned such that the light having a intensity below the nominal intensity is intercepted by the opaque areas of the mask.

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• Mechanical Engineering (AREA)
• Thermal Sciences (AREA)
• Metallurgy (AREA)
• Electroluminescent Light Sources (AREA)
• Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
• Recrystallisation Techniques (AREA)
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Citations (7)

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• 2014
  • 2014-09-11 FR FR1458520A patent/FR3025936B1/fr not_active Expired - Fee Related
• 2015
  • 2015-08-17 TW TW104126704A patent/TWI663637B/zh not_active IP Right Cessation
  • 2015-08-20 EA EA201790593A patent/EA201790593A1/ru unknown
  • 2015-08-20 EP EP15767209.8A patent/EP3192095A1/fr not_active Withdrawn
  • 2015-08-20 KR KR1020177006735A patent/KR20170051447A/ko not_active Withdrawn
  • 2015-08-20 CA CA2957845A patent/CA2957845A1/fr not_active Abandoned
  • 2015-08-20 JP JP2017513808A patent/JP2017536689A/ja not_active Ceased
  • 2015-08-20 CN CN201580048670.3A patent/CN106605290A/zh active Pending
  • 2015-08-20 BR BR112017002958A patent/BR112017002958A2/pt not_active Application Discontinuation
  • 2015-08-20 MX MX2017002996A patent/MX2017002996A/es unknown
  • 2015-08-20 AU AU2015314079A patent/AU2015314079A1/en not_active Abandoned
  • 2015-08-20 US US15/507,883 patent/US20170291848A1/en not_active Abandoned
  • 2015-08-20 WO PCT/FR2015/052238 patent/WO2016038269A1/fr not_active Ceased
• 2017
  • 2017-03-09 CO CONC2017/0002325A patent/CO2017002325A2/es unknown

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