WO2016033932A1 - 蒸镀坩埚和蒸镀装置 - Google Patents

蒸镀坩埚和蒸镀装置 Download PDF

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Publication number
WO2016033932A1
WO2016033932A1 PCT/CN2015/071101 CN2015071101W WO2016033932A1 WO 2016033932 A1 WO2016033932 A1 WO 2016033932A1 CN 2015071101 W CN2015071101 W CN 2015071101W WO 2016033932 A1 WO2016033932 A1 WO 2016033932A1
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Prior art keywords
crucible
thermally conductive
vapor deposition
heat
receiving cavity
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English (en)
French (fr)
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张金中
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US14/762,109 priority Critical patent/US20160251750A1/en
Publication of WO2016033932A1 publication Critical patent/WO2016033932A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • the present invention relates to the field of manufacturing technology of display devices, and in particular to an evaporation crucible and an evaporation device including the vapor deposition crucible.
  • OLED organic light-emitting diode
  • LTPS low temperature poly-silicon
  • FMM high-precision metal mask
  • FIG. 1 is a schematic structural view of a conventional vapor deposition crucible.
  • the tantalum body 10 of the vapor-deposited crucible body is made of titanium (Ti), which results in poor temperature uniformity of the vapor-deposited crucible after heating, thereby making the evaporation uniformity of the vapor deposition material poor;
  • the inside of the plating material is relatively slow due to the distance from the inner wall of the vapor deposition crucible, and the outer portion of the vapor deposition material directly contacting the inner wall is heated faster, causing some materials to not evaporate, and the other portion is excessively denatured by heat, thereby causing the material to be Waste and affect the evaporation effect.
  • the present invention provides an evaporation crucible comprising a crucible body, the crucible body having a receiving cavity formed thereon, the vapor deposition crucible further comprising a heat conducting layer disposed on an inner wall of the crucible body The material is surrounded to surround the accommodating cavity, and the material of the heat conducting layer is made to have a thermal conductivity higher than that of the material from which the dam body is made.
  • the material from which the crucible body is made comprises titanium or a titanium alloy
  • the material from which the thermally conductive layer is made includes any one or more of copper, copper alloy, silver, and silver alloy.
  • the vapor deposition crucible further comprises a heat conducting structure disposed in the receiving cavity, The heat conducting structure is connected to the heat conducting layer, and when the vapor deposition material is placed in the receiving cavity, the vapor deposition material is at least in contact with a portion of the heat conducting structure, and when the vapor deposition crucible is heated, The thermally conductive structure does not prevent the vapor deposition material from escaping from the open side of the receiving chamber.
  • the heat conducting structure comprises a plurality of thermally conductive partitions, and the plurality of thermally conductive partitions divide the receiving cavity into a plurality of sub-cavities formed with openings.
  • the plurality of thermally conductive spacers comprise at least one first spacer, the first spacer extending along a length of the receiving cavity, and/or
  • the plurality of thermally conductive spacers includes at least one second spacer extending in a width direction of the receiving cavity.
  • the plurality of thermally conductive spacers comprise a plurality of first spacers and a plurality of second spacers.
  • the heat conducting structure comprises at least one heat conducting mesh that divides the receiving cavity into a plurality of sub-cavities along a depth direction of the receiving cavity.
  • the heat conducting structure comprises a plurality of the heat conducting meshes arranged in a depth direction of the receiving cavity.
  • the material from which the thermally conductive structure is made is the same as the material from which the thermally conductive layer is made.
  • the present invention also provides an evaporation apparatus comprising the above-described vapor deposition crucible.
  • the inner wall of the crucible body is provided with a heat conductive layer having a large thermal conductivity, when the temperature of the heat generated by the crucible body is not uniform, the heat conducting layer can rapidly and uniformly diffuse heat, thereby making the entire heat conducting layer The temperature is more uniform, and the vapor deposition material is uniformly heated.
  • a heat conducting structure may be further disposed in the receiving cavity, and the heat conducting structure is connected to the heat conducting layer to quickly transfer heat to the inside of the vapor deposition material. In this way, different regions of the vapor deposition material in the vapor deposition crucible can be uniformly heated, thereby reducing the occurrence of material denaturation due to temperature unevenness and improving the vapor deposition effect.
  • FIG. 1 is a schematic structural view of a vapor deposition crucible in the prior art
  • FIG. 2 is a schematic structural view of an evaporating crucible according to a first embodiment of the present invention
  • Figure 3 is a plan view of the vapor deposition crucible shown in Figure 2;
  • FIG. 4 is a schematic structural view of an evaporating crucible according to a second embodiment of the present invention.
  • Fig. 5 is a plan view of the vapor deposition crucible shown in Fig. 4.
  • the vapor deposition crucible of the present invention includes a crucible body 10 on which a housing chamber 30 is formed.
  • the vapor-deposited crucible of the present invention further includes a heat-conducting layer 11 which is disposed on the inner wall of the crucible body 10 to surround the accommodation chamber 30, and the material of which the heat-conducting layer 11 is made has a thermal conductivity higher than that of the material from which the crucible body 10 is made. rate.
  • the manner in which the heat conductive layer 11 is provided on the inner wall of the crucible body 10 is not particularly limited.
  • a material having a large thermal conductivity may be directly applied to the inner wall of the crucible body 10 to form the heat conductive layer 11 by using a plating layer or the like; or, a material having a large thermal conductivity may be preliminarily formed to conform to the shape of the receiving chamber.
  • the heat conducting layer 11 is then nested within the receiving cavity.
  • the vapor deposition crucible when the vapor deposition crucible is heated, since the inner wall of the crucible body 10 is provided with the heat conduction layer 11 having a large thermal conductivity, heat can be quickly transferred to the evaporation chamber in the accommodation chamber 30 through the heat conduction layer 11. material. In this way, different regions of the vapor deposition material in the vapor deposition crucible can be uniformly heated, thereby reducing the occurrence of material denaturation due to temperature unevenness, thereby improving the vapor deposition effect.
  • the crucible body 10 will have a higher temperature region and temperature after being heated. Low area. Since the heat-conducting layer 11 having a large thermal conductivity is disposed on the crucible body 10, heat in the region of the crucible body 10 at a higher temperature is more transmitted to the heat-conducting layer 11. The heat conducting layer 11 can quickly diffuse the heat transferred from the higher temperature region, so that the temperature of the entire heat conducting layer 11 is relatively uniform, thereby achieving the purpose of uniformly heating the vapor deposition material.
  • the material from which the crucible body 10 is made may include titanium or a titanium alloy (for example, TC 4 ) to make the vapor-deposited crucible have greater heat resistance.
  • the material from which the heat conductive layer 11 is made may include any one or more of copper, copper alloy, silver, and silver alloy.
  • the material from which the heat conductive layer 11 is made may be other materials as long as the material has a large thermal conductivity and does not react with the vapor deposition material.
  • the vapor deposition crucible may further include a heat conductive structure disposed in the accommodation chamber 30.
  • the heat conducting structure is connected to the heat conducting layer 11.
  • a part of the vapor deposition material may be in contact with the heat conductive structure, and when the ruthenium is heated, the vapor deposition material may be The inside of the accommodating chamber 30 escapes. It can be seen that the thermally conductive structure does not prevent the vapor deposition material from escaping from the open side of the receiving chamber 30.
  • the specific form of the heat conducting structure is not limited in the present invention as long as heat can be transferred from the heat conducting layer 11 to the inside of the vapor deposition material without impeding evaporation of the vapor deposition material.
  • the thermally conductive structure may include a plurality of thermally conductive wires, thermally conductive rods or thermally conductive plates connected to the thermally conductive layer 11. When the vapor deposition material is placed in the accommodating chamber 30, the heat conductive structure may pass through the inside of the vapor deposition material to rapidly transfer heat to the inside of the vapor deposition material.
  • the heat conductive structure can be regarded as an extended portion of the heat conductive layer, and the heat conductive structure is provided for the purpose of increasing the contact area with the vapor deposition material, thereby heating the vapor deposition material more quickly and uniformly.
  • the thermally conductive structure can include a plurality of thermally conductive separators 12.
  • a plurality of thermally conductive partitions 12 divide the receiving chamber 30 into a plurality of sub-cavities 13 formed with openings such that vapor deposition material placed in the plurality of sub-cavities 13 can escape from the openings.
  • the heat conducting partition 12 is connected to the heat conducting layer 11 to transfer heat into the plurality of sub-cavities 13.
  • the evaporation material is divided into portions to make the temperature of the evaporation material more uniform.
  • the evaporation material is uniformly distributed in each of the sub-cavities 13.
  • the plurality of thermally conductive spacers 12 may include at least one first spacer 121 extending along the length of the receiving cavity, and/or a plurality of thermally conductive spacers 12 At least one second partition 122 is included, and the second partition 122 extends in the width direction of the accommodating chamber.
  • the plurality of thermally conductive spacers 12 include a plurality of first spacers 121 and a plurality of second spacers 122, and the plurality of first spacers 121 and the plurality of second spacers 122
  • the accommodating chamber 30 is partitioned into a plurality of sub-cavities 13.
  • the top of the sub-cavity 13 is formed with an opening from which the vapor deposition material can escape when heated.
  • the thermally conductive structure may include at least one thermally conductive mesh 20 that divides the receiving cavity 30 into a plurality of sub-cavities along a depth direction of the receiving cavity. .
  • the heat conductive mesh can divide the accommodating cavity 30 into two upper and lower sub-cavities.
  • Figure 5 shows a top view of an evaporating crucible provided with a heat conducting mesh 20. The evaporation material can escape from the mesh of the heat transfer mesh 20.
  • the heat conductive mesh 20 is preferably disposed at a lower portion of the accommodating cavity 30 such that the vapor deposition material in the accommodating cavity may cover the heat conductive mesh 20 (in other words, the heat conductive mesh 20 is located inside the vapor deposition material) Thereby, the heat of the heat transfer mesh 20 is transferred to the inside of the vapor deposition material. In this manner, the inside and the outside of the vapor-deposited material can be simultaneously heated by the heat-conducting layer 11 and the heat-conducting mesh 20, thereby making the temperature of the vapor-deposited material uniform.
  • the heat conducting structure includes a plurality of heat conducting meshes 20 arranged along the depth direction of the receiving cavity 30.
  • the plurality of heat conductive webs 20 may be arranged in an equally spaced manner or may be arranged in other ways. It should be understood that the evaporation material within the containment chamber 30 covers at least one of the heat transfer webs 20.
  • the plurality of heat transfer webs 20 can uniformly transfer heat to the inside of the vapor deposition material.
  • the plurality of heat transfer webs 20 can improve the temperature uniformity of the vapor deposition material and improve the vapor deposition effect.
  • the material for forming the heat-conducting structure may be the same as the material for forming the heat-conducting layer 11, and is a material having a large thermal conductivity, so as to quickly transfer heat to the inside of the vapor-deposited material to improve temperature uniformity.
  • the material of the heat conducting structure can be made Any one or more of copper, copper alloy, silver, and silver alloy are included.
  • the vapor deposition crucible provided by the present invention has been described above. It can be seen that since the inner wall of the crucible body is provided with a heat conducting layer having a large thermal conductivity, when the heating temperature of the crucible body is not uniform, the heat conducting layer can rapidly and uniformly diffuse heat, thereby making the temperature of the entire heat conducting layer more. Evenly, the vapor deposition material is uniformly heated.
  • a heat conducting structure may be further disposed in the receiving cavity, and the heat conducting structure is connected to the heat conducting layer to quickly transfer heat to the inside of the vapor deposition material. In this way, different regions of the vapor deposition material in the vapor deposition crucible can be uniformly heated, thereby reducing the occurrence of material denaturation due to temperature unevenness and improving the vapor deposition effect.
  • an evaporation apparatus includes the above-described vapor deposition crucible provided by the present invention.
  • the evaporation apparatus may include a vacuum chamber in which the vapor deposition chamber is disposed. Since the vapor deposition apparatus has the above-described vapor deposition crucible, the vapor deposition apparatus of the present invention can also achieve a better vapor deposition effect.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种蒸镀坩埚和蒸镀装置，所述蒸镀坩埚包括坩埚本体，所述坩埚本体上形成有容纳腔，所述蒸镀坩埚还包括导热层，所述导热层设置在所述坩埚本体的内壁上以包围所述容纳腔，并且制成所述导热层的材料的热传导率大于制成所述坩埚本体的材料的热传导率。本发明所提供的蒸镀坩埚能够对蒸镀材料进行均匀加热，改善蒸镀效果。

Description

蒸镀坩埚和蒸镀装置 技术领域
本发明涉及显示装置的制造技术领域，具体涉及一种蒸镀坩埚和包括该蒸镀坩埚的蒸镀装置。
背景技术
实现有机发光二极管(OLED)显示时，使用低温多晶硅面板(Low Temperature Poly-silicon，LTPS)与高精度金属掩膜板(Fine Metal Mask，FMM)相结合的方式已初步成熟。
在使用LTPS与FMM相结合的方式中，通过蒸镀将有机材料施加在LTPS背板上，然后再利用FMM上的图形形成红、绿、蓝器件。在真空腔体中使用线性坩埚进行蒸镀。图1为现有的蒸镀坩埚的结构示意图。在现有技术中，蒸镀坩埚的坩埚本体10采用的钛(Ti)制成，导致蒸镀坩埚受热后的温度均匀性较差，从而使得蒸镀材料的受热均匀性较差；同时，蒸镀材料内部因距离蒸镀坩埚的内壁较远而受热较慢，而蒸镀材料的直接接触内壁的外部部分受热较快，导致部分材料没有蒸发，另一部分材料受热过度而变性，从而造成材料的浪费并且影响蒸镀效果。
发明内容
本发明的目的在于提供一种蒸镀坩埚和蒸镀装置，以使得在蒸镀工艺中，蒸镀材料的受热更加均匀。
为了实现上述目的，本发明提供一种蒸镀坩埚，包括坩埚本体，所述坩埚本体上形成有容纳腔，所述蒸镀坩埚还包括导热层，所述导热层设置在所述坩埚本体的内壁上以包围所述容纳腔，并且制成所述导热层的材料的热传导率大于制成所述坩埚本体的材料的热传导率。
优选地，制成所述坩埚本体的材料包括钛或钛合金，制成所述导热层的材料包括铜、铜合金、银和银合金中的任一种或几种材料。
优选地，所述蒸镀坩埚还包括设置在所述容纳腔内的导热结构， 所述导热结构与所述导热层相连，当蒸镀材料放在所述容纳腔内时，所述蒸镀材料至少与所述导热结构的一部分接触，并且在加热所述蒸镀坩埚时，所述导热结构不会妨碍所述蒸镀材料从所述容纳腔的敞开侧逸出。
优选地，所述导热结构包括多个导热隔板，多个所述导热隔板将所述容纳腔分隔成多个形成有开口的子腔体。
优选地，所述多个导热隔板包括至少一个第一隔板，所述第一隔板沿所述容纳腔的长度方向延伸，和/或
所述多个导热隔板包括至少一个第二隔板，所述第二隔板沿所述容纳腔的宽度方向延伸。
优选地，所述多个导热隔板包括多个第一隔板和多个第二隔板。
优选地，所述导热结构包括至少一个导热网，所述导热网沿所述容纳腔的深度方向将所述容纳腔分隔成多个子腔体。
优选地，所述导热结构包括沿所述容纳腔的深度方向排列的多个所述导热网。
优选地，制成所述导热结构的材料与制成所述导热层的材料相同。
相应地，本发明还提供一种蒸镀装置，所述蒸镀装置包括上述蒸镀坩埚。
可以看出，由于所述坩埚本体的内壁上设置有热传导率较大的导热层，当坩埚本体的受热产生温度不均匀时，所述导热层能够快速、均匀地扩散热量，从而使整个导热层的温度更均匀，进而均匀地加热蒸镀材料。所述容纳腔内还可以进一步地设置有导热结构，该导热结构与导热层连接，可以将热量快速传递至蒸镀材料内部。这样，在蒸镀坩埚内的蒸镀材料的不同区域可以均匀受热，从而减少了由于温度不均匀而造成的材料变性的发生，改善蒸镀效果。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本 发明的限制。在附图中：
图1是现有技术中蒸镀坩埚的结构示意图；
图2是根据本发明第一实施例的蒸镀坩埚的结构示意图；
图3是图2所示蒸镀坩埚的俯视图；
图4是根据本发明第二实施例的蒸镀坩埚的结构示意图；
图5是图4所示蒸镀坩埚的俯视图。
其中，附图标记为：
10、坩埚本体；11、导热层；12、导热隔板；121、第一隔板；122、第二隔板；13、子腔体；20、导热网；容纳腔30。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的一个方面，提供了一种蒸镀坩埚。如图2所示，本发明的蒸镀坩埚包括坩埚本体10，坩埚本体10上形成有容纳腔30。本发明的蒸镀坩埚还包括导热层11，导热层11设置在坩埚本体10的内壁上以包围容纳腔30，并且制成导热层11的材料的热传导率大于制成坩埚本体10的材料的热传导率。
本发明对导热层11设置在坩埚本体10的内壁上的方式不作具体限制。例如，可以采用镀层等方式直接将热传导率较大的材料施加在坩埚本体10的内壁上以形成导热层11；或者，也可以采用热传导率较大的材料预先制成与所述容纳腔形状一致的导热层11，再将导热层11嵌套在所述容纳腔内。
在本发明中，当对所述蒸镀坩埚加热时，由于坩埚本体10的内壁上设置有热传导率较大的导热层11，因此热量可以通过导热层11快速传递至容纳腔30内的蒸镀材料。这样，在蒸镀坩埚内的蒸镀材料的不同区域可以均匀受热，从而减少了由于温度不均匀而造成的材料变性的发生，进而改善了蒸镀效果。
具体地说，坩埚本体10在受热后会出现温度较高区域和温度较 低区域。由于坩埚本体10上设置有热传导率较大的导热层11，所以坩埚本体10上温度较高区域的热量会更多地传递给导热层11。导热层11能够快速地将温度较高区域传递来的热量扩散，从而使整个导热层11的温度比较均匀，进而实现对蒸镀材料均匀加热的目的。
在本发明的中，制成坩埚本体10的材料可以包括钛或钛合金(例如，TC4)，以使得所述蒸镀坩埚具有较大的耐热性。制成导热层11的材料可以包括铜、铜合金、银和银合金中的任一种或几种材料。当然，制成导热层11的材料还可以为其他材料，只要该材料具有较大的导热率且不与蒸镀材料发生反应即可。
为了进一步提高蒸镀材料的温度均匀性，所述蒸镀坩埚还可以包括设置在所述容纳腔30内的导热结构。所述导热结构与导热层11相连。优选的是，当蒸镀材料放置在所述容纳腔30内时，所述蒸镀材料的一部分可以与所述导热结构相接触，并且在加热蒸镀坩埚时，所述蒸镀材料可以从所述容纳腔30内逸出。可以看出，所述导热结构不会妨碍所述蒸镀材料从容纳腔30的敞开侧逸出。
本发明对所述导热结构的具体形式不作限定，只要可以将热量从导热层11传递至蒸镀材料内部，且不阻碍所述蒸镀材料的蒸发即可。例如，所述导热结构可以包括多个与导热层11相连的导热丝、导热杆或导热板。当蒸镀材料放置在所述容纳腔30内时，所述导热结构可以穿过所述蒸镀材料内部，以将热量快速传递至所述蒸镀材料的内部。在本发明中，导热结构可以视为导热层的延伸部分，设置导热结构的目的是为了增加与蒸镀材料接触的接触面积，从而更快速、均匀地加热蒸镀材料。
在导热结构的一个实例中，如图2和图3所示，所述导热结构可以包括多个导热隔板12。多个导热隔板12将所述容纳腔30分隔成多个形成有开口的子腔体13，使得放置在多个子腔体13内的蒸镀材料可以从所述开口逸出。导热隔板12与导热层11连接，可以将热量传递至多个子腔体13内。按照这种方式，蒸镀材料被分隔成若干部分，从而使蒸镀材料的温度更加均匀。优选的是，蒸镀材料均匀地分布在各个子腔体13中。
具体地说，如图3所示，多个导热隔板12可以包括至少一个第一隔板121，第一隔板121沿所述容纳腔的长度方向延伸，和/或多个导热隔板12包括至少一个第二隔板122，第二隔板122沿所述容纳腔的宽度方向延伸。
优选的是，如图3所示，多个导热隔板12包括多个第一隔板121和多个第二隔板122，多个第一隔板121和多个第二隔板122将所述容纳腔30分隔为多个子腔体13。子腔体13的顶部形成有开口，蒸镀材料受热时可以从所述开口中逸出。
在导热结构的另一个实例中，如图4所示，所述导热结构可以包括至少一个导热网20，导热网20沿所述容纳腔的深度方向将所述容纳腔30分隔成多个子腔体。当导热网20的数量为一个时，导热网可以将容纳腔30分为上、下两个子腔体。图5示出了设置有导热网20的蒸镀坩埚的俯视图。蒸镀材料可以从导热网20的网孔逸出。应当理解的是，导热网20优选设置在所述容纳腔30的下部，以使得所述容纳腔室内的蒸镀材料可以覆盖导热网20(换句话说，导热网20位于蒸镀材料的内部)，从而使导热网20的热量传递至所述蒸镀材料的内部。按照这种方式，可以通过导热层11和导热网20同时加热蒸镀材料的内部和外部，从而使所述蒸镀材料的温度均匀。除非另有说明，在本实例中使用的“向上”“向下”、“上部”和“下部”等方位术语均指图4中的上下方向。
优选的是，如图4所示，所述导热结构包括沿所述容纳腔30的深度方向排列的多个导热网20。多个导热网20可以按照相等间隔的方式排列，也可以按照其他方式排列。应当理解的是，容纳腔30内的蒸镀材料至少覆盖至少一个导热网20。在对所述蒸镀坩埚加热时，多个导热网20可以将热量均匀地传递至蒸镀材料的内部。在蒸镀材料的量较多时，多个导热网20可以提高蒸镀材料的温度均匀性，改善蒸镀效果。
优选的是，制成所述导热结构的材料可以与制成导热层11的材料相同，均为热传导率较大的材料，以便于将热量快速传递至蒸镀材料内部，提高温度均匀性。具体地说，制成所述导热结构的材料可以 包括铜、铜合金、银和银合金中的任一种或多种材料。
以上对本发明所提供的蒸镀坩埚进行了描述。可以看出，由于坩埚本体的内壁上设置有热传导率较大的导热层，当坩埚本体的受热温度不均匀时，所述导热层能够快速、均匀地扩散热量，从而使整个导热层的温度更均匀，进而均匀地加热蒸镀材料。所述容纳腔内还可以进一步地设置有导热结构，该导热结构与导热层连接，可以将热量快速传递至蒸镀材料内部。这样，在蒸镀坩埚内的蒸镀材料的不同区域可以均匀受热，从而减少了由于温度不均匀而造成的材料变性的发生，改善蒸镀效果。
作为本发明的另一方面，提供了一种蒸镀装置。所述蒸镀装置包括本发明所提供的上述蒸镀坩埚。所述蒸镀装置可以包括真空腔室，所述蒸镀坩埚设置在所述真空腔室内。由于蒸镀装置具有上述蒸镀坩埚，本发明蒸镀装置也可以实现较好的蒸镀效果。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种蒸镀坩埚，包括坩埚本体，所述坩埚本体上形成有容纳腔，其特征在于，
    所述蒸镀坩埚还包括导热层，所述导热层设置在所述坩埚本体的内壁上以包围所述容纳腔，并且制成所述导热层的材料的热传导率大于制成所述坩埚本体的材料的热传导率。
  2. 根据权利要求1所述的蒸镀坩埚，其特征在于，
    制成所述坩埚本体的材料包括钛或钛合金，制成所述导热层的材料包括铜、铜合金、银和银合金中的任一种或几种材料。
  3. 根据权利要求1或2所述的蒸镀坩埚，其特征在于，
    所述蒸镀坩埚还包括设置在所述容纳腔内的导热结构，所述导热结构与所述导热层相连，当蒸镀材料放置在所述容纳腔内时，所述蒸镀材料至少与所述导热结构的一部分接触，并且在加热所述蒸镀坩埚时，所述导热结构不会妨碍所述蒸镀材料从所述容纳腔的敞开侧逸出。
  4. 根据权利要求3所述的蒸镀坩埚，其特征在于，
    所述导热结构包括多个导热隔板，多个所述导热隔板将所述容纳腔分隔成多个形成有开口的子腔体。
  5. 根据权利要求4所述的蒸镀坩埚，其特征在于，
    所述多个导热隔板包括至少一个第一隔板，所述第一隔板沿所述容纳腔的长度方向延伸，和/或
    所述多个导热隔板包括至少一个第二隔板，所述第二隔板沿所述容纳腔的宽度方向延伸。
  6. 根据权利要求5所述的蒸镀坩埚，其特征在于，
    多个所述导热隔板包括多个第一隔板和多个第二隔板。
  7. 根据权利要求3所述的蒸镀坩埚，其特征在于，
    所述导热结构包括至少一个导热网，所述导热网沿所述容纳腔的深度方向将所述容纳腔分隔成多个子腔体。
  8. 根据权利要求7所述的蒸镀坩埚，其特征在于，
    所述导热结构包括沿所述容纳腔的深度方向排列的多个所述导热网。
  9. 根据权利要求3所述的蒸镀坩埚，其特征在于，
    制成所述导热结构的材料与制成所述导热层的材料相同。
  10. 一种蒸镀装置，其特征在于，所述蒸镀装置包括权利要求1至9中任意一项所述的蒸镀坩埚。
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