WO2016033839A1 - 具有高开口率的像素结构及电路 - Google Patents

具有高开口率的像素结构及电路 Download PDF

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Publication number
WO2016033839A1
WO2016033839A1 PCT/CN2014/086890 CN2014086890W WO2016033839A1 WO 2016033839 A1 WO2016033839 A1 WO 2016033839A1 CN 2014086890 W CN2014086890 W CN 2014086890W WO 2016033839 A1 WO2016033839 A1 WO 2016033839A1
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gate
thin film
film transistor
drain
electrode
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PCT/CN2014/086890
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English (en)
French (fr)
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李文辉
罗长诚
曾志远
胡宇彤
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深圳市华星光电技术有限公司
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Priority to US14/426,987 priority Critical patent/US9704937B2/en
Publication of WO2016033839A1 publication Critical patent/WO2016033839A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a pixel structure and circuit having a high aperture ratio.
  • the flat display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing flat display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
  • the organic light-emitting diode display device has the advantages of self-luminescence, no backlight, high contrast, thin thickness, wide viewing angle, fast response speed, flexible panel, wide temperature range, simple structure and simple process. It is considered to be an emerging application technology for next-generation flat panel displays.
  • OLED display devices can be classified into passive OLED (PM-OLED) and active OLED (AM-OLED) according to the type of driving.
  • the display panel of the AM-OLED belongs to the active display type, and it is required to form an array structure of pixel structures on the array substrate. As shown in FIG. 1, each pixel structure of the existing AM-OLED is generally between two Thin Film Transistors (TFTs). A storage capacitor is sandwiched.
  • TFTs Thin Film Transistors
  • the first thin film transistor TFT1' is composed of a first gate 210, a first source/drain 610, and an etch barrier layer 500 sandwiched therebetween, a first semiconductor layer 410 and a gate insulating layer 300;
  • the second thin film transistor TFT2' is composed of a second gate electrode 220, a second source/drain 620, and an etch barrier layer 500, a second semiconductor layer 420 and a gate insulating layer 300 sandwiched therebetween;
  • the storage capacitor C' is composed of a first metal electrode 230 formed simultaneously with the first and second gate electrodes 210, 220, a second metal electrode 630 formed simultaneously with the first and second source/drain electrodes 610, 620, and an etch between the two
  • the barrier layer 500 is formed of a gate insulating layer 300.
  • the first and second thin film transistors TFT1', TFT2' and the storage capacitor C' necessarily occupy a certain pixel area, resulting in a decrease in the effective display area of the pixel, that is, the aperture ratio is decreased.
  • the light utilization rate is limited, especially for the high-resolution, bottom-emitting AM-OLED, the aperture ratio is more serious, and it is easy to cause problems such as insufficient display brightness and excessive power consumption.
  • FIG. 2 is an equivalent circuit diagram of FIG. 1, in which a first thin film transistor TFT1' functions as a signal switching transistor and a second thin film transistor TFT2' functions as a driving transistor.
  • the gate of the first thin film transistor TFT1' is connected to the gate driving voltage signal Vgate
  • the source is connected to the data driving voltage signal Vdata
  • the drain is connected to the gate of the second thin film transistor TFT2'
  • the second thin film transistor TFT2 ' The source is connected to the driving voltage signal V dd , the drain is connected to the anode of the organic light-emitting diode D; the cathode-connected ground signal V ss of the organic light-emitting diode D; and one electrode of the storage capacitor C' is connected to the second thin film transistor
  • the gate of the TFT2' and the other electrode are connected to the source of the second thin film transistor TFT2'.
  • the working principle of the circuit is that when the gate driving voltage signal V gate comes, the first thin film transistor TFT1' is turned on, the data driving voltage signal Vdata is input to the gate of the second thin film transistor TFT2', and the second thin film transistor TFT2' When the driving, the driving voltage signal V dd is amplified by the second thin film transistor TFT 2 ′ and then driven to display the organic light emitting diode D.
  • the storage capacitor C' is the main means for maintaining the potential of the pixel electrode.
  • the present invention first provides a pixel structure having a high aperture ratio, having a substrate; a first gate and a second gate disposed on one side of the substrate; and being disposed in the first and second a gate insulating layer on the gate and the substrate, the gate insulating layer completely covering the first gate and the substrate, exposing both ends of the second gate; and being disposed on the gate insulating layer directly above the first gate a first semiconductor layer; a second semiconductor layer disposed on the gate insulating layer directly above the second gate; an etch barrier layer disposed on the first and second semiconductor layers and the gate insulating layer; Semiconductor layer and etch stop a first source/drain on the barrier layer, a second source/drain disposed on the second semiconductor layer and the etch barrier layer, the first source/drain overlapping one end of the first semiconductor layer and the second gate, a second source/drain overlaps the second semiconductor layer; a protective layer disposed on the first and second source/drain electrodes and the
  • the transparent capacitor constitutes an effective display portion of the pixel structure.
  • the transparent electrode is an ITO transparent electrode or an IZO transparent electrode
  • the pixel electrode is an ITO pixel electrode or an IZO pixel electrode.
  • the pixel structure having a high aperture ratio also has a photoresist spacer disposed on the pixel defining layer.
  • the pixel structure having a high aperture ratio further has a first top gate disposed between the protective layer and the planar insulating layer directly above the first gate, and a protective layer and a flat insulating layer directly above the second gate A second top gate between the layers.
  • the first and second top gates and the transparent electrode are simultaneously formed.
  • the first semiconductor layer is an IGZO semiconductor layer
  • the second semiconductor layer is an IGZO semiconductor layer.
  • the present invention also provides a circuit having a pixel structure having a high aperture ratio, comprising a first thin film transistor, a second thin film transistor, a transparent capacitor, and a light emitting diode, and both electrodes constituting the transparent capacitor are a transparent electrode; a gate of the first thin film transistor is connected to the gate driving voltage signal, a source is connected to the data driving voltage signal, a drain is connected to a gate of the second thin film transistor; and a source of the second thin film transistor is connected to the driving voltage signal, and the drain
  • the anode of the organic light emitting diode is connected to the anode; the cathode grounding signal of the organic light emitting diode; one electrode of the transparent capacitor is connected to the gate of the second thin film transistor, and the other electrode is connected to the source or the drain of the second thin film transistor .
  • the circuit of the pixel structure having a high aperture ratio further includes an opaque capacitor, an electrode of the opaque capacitor is connected to the gate of the second thin film transistor, and the other electrode is connected to the source or the drain of the second thin film transistor.
  • the source and the drain of the first thin film transistor are interchangeable, and the source and the drain of the second thin film transistor are also interchangeable.
  • the present invention provides a pixel structure having a high aperture ratio, A transparent capacitor composed of a transparent electrode and a pixel electrode is provided, and the transparent capacitor is used as an effective display portion, which can significantly increase the effective display area of the pixel, increase the aperture ratio, improve display brightness, and reduce power consumption.
  • the circuit of the pixel structure with high aperture ratio provided by the invention can increase the aperture ratio and improve the display effect by providing a transparent capacitor.
  • FIG. 1 is a schematic cross-sectional view of a conventional pixel structure
  • FIG. 2 is an equivalent circuit diagram of a conventional pixel structure of FIG. 1;
  • FIG. 3 is a cross-sectional view showing a first embodiment of a pixel structure having a high aperture ratio according to the present invention
  • FIG. 4 is a cross-sectional view showing a second embodiment of a pixel structure having a high aperture ratio according to the present invention.
  • FIG. 5 is a schematic view showing a first embodiment of a circuit of a pixel structure having a high aperture ratio according to the present invention
  • FIG. 6 is a schematic view showing a second embodiment of a circuit of a pixel structure having a high aperture ratio according to the present invention.
  • Figure 7 is a schematic illustration of a third embodiment of a circuit of a pixel structure having a high aperture ratio in accordance with the present invention.
  • the present invention first provides a pixel structure having a high aperture ratio, and Fig. 3 shows a first embodiment thereof.
  • the pixel structure having a high aperture ratio has a substrate 1 , which may be a glass substrate or a plastic substrate;
  • first gate 21 and a second gate 22 disposed on the substrate 1 side, and the first gate 21 and the second gate 22 are formed by patterning the same first metal film layer;
  • a gate insulating layer 3 disposed on the first and second gate electrodes 21 and 22 and the substrate 1, the gate insulating layer 3 completely covering the first gate 21 and the substrate 1, and exposing two of the second gate 22 end;
  • first semiconductor layer 41 disposed on the gate insulating layer 3 directly above the first gate electrode 21; and a second semiconductor layer 42 disposed on the gate insulating layer 3 directly above the second gate electrode 22;
  • the semiconductor layer 41 and the second semiconductor layer 42 are formed by patterning the same semiconductor film layer;
  • An etch stop layer 5 disposed on the first and second semiconductor layers 41, 42 and the gate insulating layer 3;
  • first source/drain 61 disposed on the first semiconductor layer 41 and the etch barrier layer 5; a second source/drain 62 disposed on the second semiconductor layer 42 and the etch barrier layer 5; the first source/ The drain 61 and the second source/drain 62 are formed by patterning the same second metal film layer; the first source/drain 61 overlaps one end of the first semiconductor layer 41 and the second gate 22, and the second source /drain 62 overlaps the second semiconductor layer 42;
  • a protective layer 7 disposed on the first and second source/drain electrodes 61, 62 and the etch stop layer 5;
  • a transparent electrode 8 disposed on the protective layer 7 on the other side of the substrate 1, the transparent electrode 8 overlapping the other end of the second gate 22;
  • a pixel electrode 10 disposed on the flat insulating layer 9, the pixel electrode 10 overlapping the second source/drain 62 and overlapping the transparent electrode 8;
  • a pixel defining layer 11 disposed on the flat insulating layer 9 and the pixel electrode 10, the pixel defining layer 11 corresponding to an overlapping region of the pixel electrode 10 and the transparent electrode 8;
  • photoresist spacer 12 provided on the pixel defining layer 11.
  • the first gate 21, the first source/drain 61 and the etch barrier layer 5 sandwiched therebetween, the first semiconductor layer 41 and the gate insulating layer 3 constitute a first thin film transistor TFT1;
  • the gate electrode 22, the second source/drain electrode 62 and the etch barrier layer 5, the second semiconductor layer 42 and the gate insulating layer 3 sandwiched therebetween constitute a second thin film transistor TFT2;
  • the transparent electrode 8, the pixel electrode 10 and a flat insulating layer 9 sandwiched therebetween constitute a transparent capacitor C.
  • the first semiconductor layer 41 is an Indium Gallium Zinc Oxide (IGZO) semiconductor layer
  • the second semiconductor layer 42 is an IGZO semiconductor layer.
  • IGZO Indium Gallium Zinc Oxide
  • the transparent electrode 8 is an Indium Tin Oxide (ITO) transparent electrode or an Indium Zinc Oxide (IZO) transparent electrode, and the transparent electrode 8 can be formed into different shapes; the pixel electrode 10 is ITO. Pixel electrode or IZO pixel electrode.
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • the transparent electrode 8 and the pixel electrode 10 are transparent, light can pass through, and the transparent capacitor C constitutes an effective display portion of the pixel structure, which can significantly increase the effective display area of the pixel, increase the aperture ratio, and improve display brightness. Reduce power consumption.
  • the transparent capacitor C can completely replace the opaque capacitor formed by the two metal electrodes in the prior art, and can also partially replace the opaque capacitor, and can achieve the effect of increasing the effective display area of the pixel and increasing the aperture ratio.
  • FIG. 4 is a second embodiment of a pixel structure having a high aperture ratio according to the present invention.
  • the second embodiment is different from the first embodiment in that the pixel structure having a high aperture ratio further has a first top gate disposed between the protective layer 7 and the planar insulating layer 9 directly above the first gate 21 . 81, and a second top gate 82 disposed between the protective layer 7 and the flat insulating layer 9 directly above the second gate 22.
  • the first thin film transistor TFT1 and the second thin film transistor TFT2 are both double gate structures.
  • the first and second top gates 81 and 82 and the transparent electrode 8 are simultaneously formed in one process, and the materials and transparent materials of the first and second top gates 81 and 82 are transparent.
  • the electrodes 8 are made of the same material and are either ITO or IZO. Others are the same as the first embodiment, here No longer.
  • the present invention also provides a circuit having a pixel structure with a high aperture ratio
  • FIG. 5 is a first embodiment of the circuit including a first thin film transistor TFT1, a second thin film transistor TFT2, a transparent capacitor C, and a light emitting
  • the diode D and the two electrodes constituting the transparent capacitor C are all transparent electrodes.
  • the gate of the first thin film transistor TFT1 is connected to the gate driving voltage signal Vgate , the source is connected to the data driving voltage signal Vdata , the drain is connected to the gate of the second thin film transistor TFT2, and the source of the second thin film transistor TFT2 is connected and driven.
  • the voltage signal V dd the drain is connected to the anode of the organic light-emitting diode D; the cathode-connected ground signal V ss of the organic light-emitting diode D; one electrode of the transparent capacitor C is connected to the gate of the second thin film transistor TFT2, and the other The electrode is connected to the source of the second thin film transistor TFT2.
  • the first thin film transistor TFT1 functions as a signal switching transistor
  • the second thin film transistor TFT2 functions as a driving transistor.
  • the working process of the circuit is: when the gate driving voltage signal V gate comes, the first thin film transistor TFT1 is turned on, the data driving voltage signal V data is input to the gate of the second thin film transistor TFT2, and the second thin film transistor TFT2 is turned on.
  • the driving voltage signal V dd is amplified by the second thin film transistor TFT2 to drive the organic light emitting diode D for display.
  • the transparent capacitor C is used to maintain the potential of the pixel electrode.
  • the transparent electrode C is provided in the circuit, the aperture ratio can be increased and the display effect can be improved.
  • FIG. 6 illustrates a second embodiment of a circuit having a pixel structure with a high aperture ratio, which is different from the first embodiment in that an electrode of the transparent capacitor C is connected to the gate of the second thin film transistor TFT 2 .
  • the other electrode is connected to the drain of the second thin film transistor TFT2.
  • FIG. 7 illustrates a third embodiment of a circuit having a pixel structure with a high aperture ratio, which is different from the first embodiment in that an electrode of the transparent capacitor C is connected to the gate of the second thin film transistor TFT 2 .
  • the other electrode is connected to the drain of the second thin film transistor TFT2, and an opaque capacitor C" is added.
  • One electrode of the opaque capacitor C" is connected to the gate of the second thin film transistor TFT2, and the other electrode is connected to the second thin film transistor TFT2.
  • the source is shown in FIG. 7 , which illustrates a third embodiment of a circuit having a pixel structure with a high aperture ratio, which is different from the first embodiment in that an electrode of the transparent capacitor C is connected to the gate of the second thin film transistor TFT 2 .
  • the other electrode is connected to the drain of the second thin film transistor TFT2, and an opaque capacitor C" is added.
  • One electrode of the opaque capacitor C" is connected to the gate of the second thin film transistor TFT2, and the other electrode is connected to the second
  • the source and the drain of the first thin film transistor TFT1 are interchangeable, and the source and the drain of the second thin film transistor TFT2 are also interchangeable. Therefore, in the third embodiment, the transparent One electrode of the capacitor C is connected to the gate of the second thin film transistor TFT2, the other electrode is connected to the source of the second thin film transistor TFT2, and one electrode of the opaque capacitor C" is connected to the gate of the second thin film transistor TFT2, and the other electrode is connected.
  • the drain of the second thin film transistor TFT2 is the same as the first embodiment and will not be described herein.
  • the pixel structure having a high aperture ratio of the present invention is provided by providing a transparent capacitor composed of a transparent electrode and a pixel electrode, and using the transparent capacitor as an effective display portion.
  • a transparent capacitor composed of a transparent electrode and a pixel electrode
  • the circuit of the pixel structure with high aperture ratio provided by the invention can increase the aperture ratio and improve the display effect by providing a transparent capacitor.

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Abstract

提供一种具有高开口率的像素结构及电路。该具有高开口率的像素结构的第一栅极(21)、第一源/漏极(61)与夹在二者之间的蚀刻阻挡层(5)、第一半导体层(41)与栅极绝缘层(3)构成第一薄膜晶体管(TFT1)；第二栅极(22)、第二源/漏极(62)与夹在二者之间的蚀刻阻挡层(5)、第二半导体层(42)与栅极绝缘层(3)构成第二薄膜晶体管(TFT2)；透明电极(8)、像素电极(10)与夹在二者之间的平坦绝缘层(9)构成一透明电容(C)，且所述透明电容(C)构成该像素结构的有效显示部分，能够显著增加像素的有效显示面积，提高开口率，提高显示亮度，降低功耗。

Description

具有高开口率的像素结构及电路 技术领域
本发明涉及显示技术领域，尤其涉及一种具有高开口率的像素结构及电路。
背景技术
平面显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机发光二极管显示器件(Organic Light Emitting Display，OLED)。
有机发光二极管显示器件由于同时具备自发光，不需背光源、对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异特性，被认为是下一代平面显示器的新兴应用技术。
OLED显示器件按照驱动类型可分为无源OLED(PM-OLED)和有源OLED(AM-OLED)。AM-OLED的显示面板属于主动显示类型，需要在阵列基板上制作呈阵列式分布的像素结构。如图1所示，现有的AM-OLED的每一像素结构一般为两个薄膜晶体管(Thin Film Transistor，TFT)之间 夹着一个存储电容。具体的，第一薄膜晶体管TFT1’由第一栅极210、第一源/漏极610及夹在两者之间的蚀刻阻挡层500、第一半导体层410与栅极绝缘层300构成；第二薄膜晶体管TFT2’由第二栅极220、第二源/漏极620及夹在两者之间的蚀刻阻挡层500、第二半导体层420与栅极绝缘层300构成；存储电容C’由与第一、第二栅极210、220同时形成的第一金属电极230、与第一、第二源/漏极610、620同时形成的第二金属电极630及夹在两者之间的蚀刻阻挡层500与栅极绝缘层300构成。由于金属材质会遮蔽光，阻碍光透过，因此第一、第二薄膜晶体管TFT1’、TFT2’与存储电容C’必然占用一定的像素面积，造成像素有效显示面积下降，即开口率下降，大大限制了光利用率，特别是对于高分辨率、底部发光的AM-OLED，开口率的下降更为严重，容易造成显示亮度不足，功率消耗过大等问题。
图2为图1的等效电路图，第一薄膜晶体管TFT1’作为信号切换晶体管，第二薄膜晶体管TFT2’作为驱动晶体管。具体的，第一薄膜晶体管TFT1’的栅极连接栅极驱动电压信号Vgate，源极连接数据驱动电压信号Vdata，漏极与第二薄膜晶体管TFT2’的栅极连接；第二薄膜晶体管TFT2’的源极连接驱动电压信号Vdd，漏极连接有机发光二级管D的阳极；有机发光二级管D的阴连极接地信号Vss；存储电容C’的一电极连接第二薄膜晶体管TFT2’ 的栅极，另一电极连接第二薄膜晶体管TFT2’的源极。
该电路的工作原理是，当栅极驱动电压信号Vgate到来时，第一薄膜晶体管TFT1’导通，数据驱动电压信号Vdata输入第二薄膜晶体管TFT2’的栅极，第二薄膜晶体管TFT2’导通，驱动电压信号Vdd经该第二薄膜晶体管TFT2’放大后驱动有机发光二极管D进行显示。而当栅极驱动电压信号Vgate结束后，存储电容C’是维持像素电极电位的主要手段。
发明内容
本发明的目的在于提供一种具有高开口率的像素结构，能够显著增加像素的有效显示面积，提高开口率，提高显示亮度，降低功耗。
本发明的目的还在于提供一种具有高开口率的像素结构的电路，有利于提高开口率，提升显示效果。
为实现上述目的，本发明首先提供一种具有高开口率的像素结构，具有一基板；于该基板一侧设于其上的第一栅极与第二栅极；设于第一、第二栅极及基板上的栅极绝缘层，该栅极绝缘层完全覆盖第一栅极与基板，而暴露出第二栅极的两端；于第一栅极正上方设于栅极绝缘层上的第一半导体层；于第二栅极正上方设于栅极绝缘层上的第二半导体层；设于第一、第二半导体层与栅极绝缘层上的蚀刻阻挡层；设于第一半导体层与蚀刻阻 挡层上的第一源/漏极，设于第二半导体层与蚀刻阻挡层上的第二源/漏极，第一源/漏极搭接第一半导体层及第二栅极的一端，第二源/漏极搭接第二半导体层；设于第一、第二源/漏极及蚀刻阻挡层上的保护层；于基板另一侧设于保护层上的透明电极，该透明电极搭接第二栅极的另一端；设于保护层与透明电极上的平坦绝缘层；设于平坦绝缘层上的像素电极，该像素电极搭接第二源/漏极并与透明电极重叠；设于平坦绝缘层与像素电极上的像素定义层，该像素定义层对应于像素电极与透明电极的重叠区域开口；所述第一栅极、第一源/漏极与夹在二者之间的蚀刻阻挡层、第一半导体层与栅极绝缘层构成第一薄膜晶体管；所述第二栅极、第二源/漏极与夹在二者之间的蚀刻阻挡层、第二半导体层与栅极绝缘层构成第二薄膜晶体管；所述透明电极、像素电极与夹在二者之间的平坦绝缘层构成一透明电容。
所述透明电容构成该像素结构的有效显示部分。
所述透明电极为ITO透明电极或IZO透明电极，所述像素电极为ITO像素电极或IZO像素电极。
该具有高开口率的像素结构还具有设于像素定义层上的光阻间隔物。
该具有高开口率的像素结构还具有于第一栅极正上方设于保护层与平坦绝缘层之间的第一顶栅极，及于第二栅极正上方设于保护层与平坦绝缘 层之间的第二顶栅极。
所述第一、第二顶栅极与透明电极在同时形成。
所述第一半导体层为IGZO半导体层，所述第二半导体层为IGZO半导体层。
本发明还提供一种具有高开口率的像素结构的电路，包括一第一薄膜晶体管、一第二薄膜晶体管、一透明电容、及一发光二级管，构成所述透明电容的两电极均为透明电极；第一薄膜晶体管的栅极连接栅极驱动电压信号，源极连接数据驱动电压信号，漏极与第二薄膜晶体管的栅极连接；第二薄膜晶体管的源极连接驱动电压信号，漏极连接有机发光二级管的阳极；有机发光二级管的阴连极接地信号；透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极。
该具有高开口率的像素结构的电路，还包括一不透明电容，该不透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极。
所述第一薄膜晶体管的源极、漏极可互换，所述第二薄膜晶体管的源极、漏极也可互换。
本发明的有益效果：本发明提供的一种具有高开口率的像素结构，通 过设置由透明电极与像素电极构成的透明电容，并将该透明电容作为有效显示部分，能够显著增加像素的有效显示面积，提高开口率，提高显示亮度，降低功耗。本发明提供的一种具有高开口率的像素结构的电路，通过设置透明电容，能够提高开口率，提升显示效果。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的像素结构的剖面示意图；
图2为图1中现有的像素结构的等效电路图；
图3为本发明具有高开口率的像素结构的第一实施例的剖面示意图；
图4为本发明具有高开口率的像素结构的第二实施例的剖面示意图；
图5为本发明具有高开口率的像素结构的电路的第一实施例的示意图；
图6为本发明具有高开口率的像素结构的电路的第二实施例的示意图；
图7为本发明具有高开口率的像素结构的电路的第三实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明首先提供一种具有高开口率的像素结构，图3所示为其第一实施例。该具有高开口率的像素结构具有一基板1，该基板1可为玻璃基板或塑料基板；
于该基板1一侧设于其上的第一栅极21与第二栅极22，所述第一栅极21与第二栅极22由同一第一金属膜层经图案化后形成；
设于第一、第二栅极21、22及基板1上的栅极绝缘层3，该栅极绝缘层3完全覆盖第一栅极21与基板1，而暴露出第二栅极22的两端；
于第一栅极21正上方设于栅极绝缘层3上的第一半导体层41；于第二栅极22正上方设于栅极绝缘层3上的第二半导体层42；所述第一半导体层41与第二半导体层42由同一半导体膜层经图案化后形成；
设于第一、第二半导体层41、42与栅极绝缘层3上的蚀刻阻挡层5；
设于第一半导体层41与蚀刻阻挡层5上的第一源/漏极61；设于第二半导体层42与蚀刻阻挡层5上的第二源/漏极62；所述第一源/漏极61与第二源/漏极62由同一第二金属膜层经图案化后形成；第一源/漏极61搭接第一半导体层41及第二栅极22的一端，第二源/漏极62搭接第二半导体层 42；
设于第一、第二源/漏极61、62及蚀刻阻挡层5上的保护层7；
于基板1另一侧设于保护层7上的透明电极8，该透明电极8搭接第二栅极22的另一端；
设于保护层7与透明电极8上的平坦绝缘层9；
设于平坦绝缘层9上的像素电极10，该像素电极10搭接第二源/漏极62并与透明电极8重叠；
设于平坦绝缘层9与像素电极10上的像素定义层11，该像素定义层11对应于像素电极10与透明电极8的重叠区域开口；
还具有设于像素定义层11上的光阻间隔物12。
所述第一栅极21、第一源/漏极61与夹在二者之间的蚀刻阻挡层5、第一半导体层41与栅极绝缘层3构成第一薄膜晶体管TFT1；所述第二栅极22、第二源/漏极62与夹在二者之间的蚀刻阻挡层5、第二半导体层42与栅极绝缘层3构成第二薄膜晶体管TFT2；所述透明电极8、像素电极10与夹在二者之间的平坦绝缘层9构成一透明电容C。
具体的，所述第一半导体层41为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)半导体层，所述第二半导体层42为IGZO半导体层。
所述透明电极8为氧化铟锡(Indium Tin Oxide，ITO)透明电极或氧化铟锌(Indium Zinc Oxide，IZO)透明电极，该透明电极8可制作成不同的形状；所述像素电极10为ITO像素电极或IZO像素电极。
由于所述透明电极8、像素电极10均透明，能够供光线穿过，所述透明电容C构成该像素结构的有效显示部分，能够显著增加像素的有效显示面积，提高开口率，提高显示亮度，降低功耗。
值得一提的是，所述透明电容C可完全取代现有技术中由两金属电极构成的不透明电容，也可部分取代不透明电容，均能达到增加像素的有效显示面积，提高开口率的效果。
请参阅图4，为本发明具有高开口率的像素结构的第二实施例。该第二实施例与第一实施例的区别在于，该具有高开口率的像素结构还具有于第一栅极21正上方设于保护层7与平坦绝缘层9之间的第一顶栅极81，及于第二栅极22正上方设于保护层7与平坦绝缘层9之间的第二顶栅极82。相应的，所述第一薄膜晶体管TFT1与第二薄膜晶体管TFT2均为双栅极结构。为充分利用制程，提高生产效率，所述第一、第二顶栅极81、82与透明电极8在一道制程中同时形成，所述第一、第二顶栅极81、82的材质与透明电极8的材质相同，均为ITO或IZO。其它与第一实施例相同，此处 不再赘述。
本发明还提供一种具有高开口率的像素结构的电路，图5为该电路的第一实施例，包括一第一薄膜晶体管TFT1、一第二薄膜晶体管TFT2、一透明电容C、及一发光二级管D，构成所述透明电容C的两电极均为透明电极。
第一薄膜晶体管TFT1的栅极连接栅极驱动电压信号Vgate，源极连接数据驱动电压信号Vdata，漏极与第二薄膜晶体管TFT2的栅极连接；第二薄膜晶体管TFT2的源极连接驱动电压信号Vdd，漏极连接有机发光二级管D的阳极；有机发光二级管D的阴连极接地信号Vss；透明电容C的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的源极。
所述第一薄膜晶体管TFT1作为信号切换晶体管，第二薄膜晶体管TFT2作为驱动晶体管。该电路的工作过程为：当栅极驱动电压信号Vgate到来时，第一薄膜晶体管TFT1导通，数据驱动电压信号Vdata输入第二薄膜晶体管TFT2的栅极，第二薄膜晶体管TFT2导通，驱动电压信号Vdd经该第二薄膜晶体管TFT2放大后驱动有机发光二极管D进行显示。而当栅极驱动电压信号Vgate结束后，透明电容C用来维持像素电极的电位。
由于该电路中设置了透明电极C，能够提高开口率，提升显示效果。
请参阅图6，为本发明具有高开口率的像素结构的电路的第二实施例，其与第一实施例的区别在于，所述透明电容C的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的漏极。其它与第一实施例相同，此处不再赘述。
请参阅图7，为本发明具有高开口率的像素结构的电路的第三实施例，其与第一实施例的区别在于，所述透明电容C的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的漏极，并增设了一不透明电容C”，该不透明电容C”的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的源极。
所述第一薄膜晶体管TFT1的源极、漏极可互换，所述第二薄膜晶体管TFT2的源极、漏极也可互换，因此在该第三实施例中，还可将所述透明电容C的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的源极，将不透明电容C”的一电极连接第二薄膜晶体管TFT2的栅极，另一电极连接第二薄膜晶体管TFT2的漏极。其它与第一实施例相同，此处不再赘述。
综上所述，本发明的一种具有高开口率的像素结构，通过设置由透明电极与像素电极构成的透明电容，并将该透明电容作为有效显示部分，能 够显著增加像素的有效显示面积，提高开口率，提高显示亮度，降低功耗。本发明提供的一种具有高开口率的像素结构的电路，通过设置透明电容，能够提高开口率，提升显示效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (11)

  1. 一种具有高开口率的像素结构，具有一基板；于该基板一侧设于其上的第一栅极与第二栅极；设于第一、第二栅极及基板上的栅极绝缘层，该栅极绝缘层完全覆盖第一栅极与基板，而暴露出第二栅极的两端；于第一栅极正上方设于栅极绝缘层上的第一半导体层；于第二栅极正上方设于栅极绝缘层上的第二半导体层；设于第一、第二半导体层与栅极绝缘层上的蚀刻阻挡层；设于第一半导体层与蚀刻阻挡层上的第一源/漏极，设于第二半导体层与蚀刻阻挡层上的第二源/漏极，第一源/漏极搭接第一半导体层及第二栅极的一端，第二源/漏极搭接第二半导体层；设于第一、第二源/漏极及蚀刻阻挡层上的保护层；于基板另一侧设于保护层上的透明电极，该透明电极搭接第二栅极的另一端；设于保护层与透明电极上的平坦绝缘层；设于平坦绝缘层上的像素电极，该像素电极搭接第二源/漏极并与透明电极重叠；设于平坦绝缘层与像素电极上的像素定义层，该像素定义层对应于像素电极与透明电极的重叠区域开口；
    所述第一栅极、第一源/漏极与夹在二者之间的蚀刻阻挡层、第一半导体层与栅极绝缘层构成第一薄膜晶体管；所述第二栅极、第二源/漏极与夹在二者之间的蚀刻阻挡层、第二半导体层与栅极绝缘层构成第二薄膜晶体 管；所述透明电极、像素电极与夹在二者之间的平坦绝缘层构成一透明电容。
  2. 如权利要求1所述的具有高开口率的像素结构，其中，所述透明电容构成该像素结构的有效显示部分。
  3. 如权利要求1所述的具有高开口率的像素结构，其中，所述透明电极为ITO透明电极或IZO透明电极，所述像素电极为ITO像素电极或IZO像素电极。
  4. 如权利要求1所述的具有高开口率的像素结构，其中，还具有设于像素定义层上的光阻间隔物。
  5. 如权利要求1所述的具有高开口率的像素结构，其中，还具有于第一栅极正上方设于保护层与平坦绝缘层之间的第一顶栅极，及于第二栅极正上方设于保护层与平坦绝缘层之间的第二顶栅极。
  6. 如权利要求5所述的具有高开口率的像素结构，其中，所述第一、第二顶栅极与透明电极同时形成。
  7. 如权利要求1所述的具有高开口率的像素结构，其中，所述第一半导体层为IGZO半导体层，所述第二半导体层为IGZO半导体层。
  8. 一种具有高开口率的像素结构的电路，包括一第一薄膜晶体管、一 第二薄膜晶体管、一透明电容、及一发光二级管，构成所述透明电容的两电极均为透明电极；第一薄膜晶体管的栅极连接栅极驱动电压信号，源极连接数据驱动电压信号，漏极与第二薄膜晶体管的栅极连接；第二薄膜晶体管的源极连接驱动电压信号，漏极连接有机发光二级管的阳极；有机发光二级管的阴连极接地信号；透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极。
  9. 如权利要求8所述具有高开口率的像素结构的电路，还包括一不透明电容，该不透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极。
  10. 如权利要求9所述的具有高开口率的像素结构的电路，其中，所述第一薄膜晶体管的源极、漏极可互换，所述第二薄膜晶体管的源极、漏极也可互换。
  11. 一种具有高开口率的像素结构的电路，包括一第一薄膜晶体管、一第二薄膜晶体管、一透明电容、及一发光二级管，构成所述透明电容的两电极均为透明电极；第一薄膜晶体管的栅极连接栅极驱动电压信号，源极连接数据驱动电压信号，漏极与第二薄膜晶体管的栅极连接；第二薄膜晶体管的源极连接驱动电压信号，漏极连接有机发光二级管的阳极；有机 发光二级管的阴连极接地信号；透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极；
    所述具有高开口率的像素结构的电路，还包括一不透明电容，该不透明电容的一电极连接第二薄膜晶体管的栅极，另一电极连接第二薄膜晶体管的源极或漏极；
    其中，所述第一薄膜晶体管的源极、漏极可互换，所述第二薄膜晶体管的源极、漏极也可互换。
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