CN1620206A - 像素单元及其修补方法、电致发光装置及其修补方法 - Google Patents

像素单元及其修补方法、电致发光装置及其修补方法 Download PDF

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CN1620206A
CN1620206A CN200410092211.9A CN200410092211A CN1620206A CN 1620206 A CN1620206 A CN 1620206A CN 200410092211 A CN200410092211 A CN 200410092211A CN 1620206 A CN1620206 A CN 1620206A
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capacitor
driving transistors
light emitting
emitting device
pixel
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CN100426515C (zh
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孙文堂
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AU Optronics Corp
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Abstract

一电致发光装置中的一像素，包含一有机发光二极管(OLED)，用以驱动该有机发光二极管的一驱动晶体管，以及互相并连的第一和第二电容器的一端耦接于该驱动晶体管的栅极。每一电容器储存跨该驱动晶体管的栅极和源极的电压。当该第一电容器或第二电容器其中之一故障了，就切断其连接。

Description

像素单元及其修补方法、电致发光装置及其修补方法
技术领域
本发明涉及一电致发光装置，特别涉及一种电致发光装置中的冗余储存电容器，以及修补有机电致发光装置中像素的方法。
背景技术
一电致发光装置是利用电致发光的原理的一种发光装置。一电致发光装置一般包含薄膜晶体管(TFT)和发光二极管(LED)。每一发光二极管更包含一发光层。如果该发光层包含有机发光材质，则该装置称为有机电致发光装置。当电流通过该发光二极管的阴极和阳极，光线则从该发光层释放出来。
一般而言，一主机阵列有机发光二极管(OLED)或一聚合物发光二极管(PLED)不论是电压驱动或电流驱动，皆包含一像素阵列，其中每一像素包含一组子像素。在美国专利号6373454和6501466中可找到电流驱动电致发光装置的例子。每一子像素更进一步包含一转换晶体管，一驱动晶体管和一储存电容器。该储存电容器的一端点耦接至该驱动晶体管的栅极，而另一端点连接至该驱动晶体管的源极。如果该储存电容器的端点短路，则跨该驱动晶体管栅极和源极的跨电压VGS为零。结果导致该驱动晶体管无法开启，对应的像素在显示时为一暗点。另一方面，如果该储存电容器的端点为断路，则与该驱动晶体管的连接切断，结果导致该驱动晶体管的栅极电压容易受到耦合效应的影响，跨电压VGS变得不稳定，而对应的像素在显示时呈现不稳定的闪烁。
一有机发光二极管驱动器电路，一般用于低温多晶硅(LTPS)装置的面板上，包含一数据驱动器，其中包含一电流镜射电路或一电流复制电路，与至少一储存电容器接合，用以取样一像素电流。如果该储存电容器短路或断路，可能会发生面板线缺陷。因此，需要一种可克服此种缺点的电致发光装置，尤其是可在取样像素电流的储存电容器为短路或断路时消除面板线缺陷的一种电致发光装置。
发明内容
为达成上述优点，本发明提供一电致发光装置，包含多个扫描线，多个数据线正交于所述扫描线以及一像素阵列。所述数据线正交于所述扫描线，该像素阵列由每一扫描线和每一数据线交叉点形成的多个像素组成。其中每一像素包含一发光二极管，并耦接一驱动晶体管以驱动该发光二极管，以及多个电容器，至少一第一电容器耦接至该驱动晶体管的栅极，一第二电容器与该第一电容器并联或悬置未接。而每一电容器储存一电压值，该电压值用以驱动该驱动晶体管。
本发明另一实施例提供另一电致发光装置，包含一像素阵列以及一驱动装置。该驱动装置用以驱动该像素阵列，包含一驱动晶体管和多个电容器。其中至少一第一电容器耦接至该驱动晶体管的栅极，一第二电容器与该第一电容器并联或呈悬置未接状态。而每一电容器是用以储存跨该驱动晶体管栅极和源极的电压值。
本发明更提供一修补电致发光装置的方法，包含下列步骤。首先在该电致发光装置中提供一像素阵列，在每一像素中提供多个电容器。接着在每一像素中提供一驱动晶体管，将一第一电容器耦接到该驱动晶体管，将一第二电容器并联该第一电容器或悬置。最后在该第一电容器中储存一电压值，用以驱动该驱动晶体管。
本发明另一实施例更进一步提供一修补一电致发光装置的方法，包含下列步骤。首先在该电致发光装置中提供一像素阵列，并提供多个驱动电路用以驱动该像素阵列。接着在每一驱动电路中提供多个电容器，并在每一像素中提供一驱动晶体管。最后将一第一电容器耦接到该驱动晶体管的栅极，将一第二电容器并联该第一电容器或悬置，以及将该驱动电路其中之一耦接到该像素阵列中的一行像素上。
附图说明
图1是本发明的一实施例中的电致发光装置像素电路图；
图2是本发明的一实施例中的电致发光装置像素概念图；
图3是本发明的一实施例中的像素电路图；
图4是本发明的一实施例中的像素电路图；
图5是本发明的一实施例中的像素电路图；
图6是本发明的一实施例中的像素电路图；
图7A和7B是本发明的一实施例中的修补像素方法的方块图；以及
图8是本发明的一实施例中的驱动装置方块图。
附图符号说明
10～像素                12～转换晶体管
14～转换晶体管          16～第一电容器
18～第二电容器          20～驱动晶体管
22～OLED装置            30～像素
32～转换晶体管          36～第一电容器
38～第二电容器          40～驱动晶体管
42～OLED装置            50～像素
52～转换晶体管          54～转换晶体管
56～第一电容器          58～第二电容器
60～驱动晶体管          62～OLED装置
70～像素                72～转换晶体管
76～第一电容器          78～第二电容器
80～驱动晶体管          82～OLED装置
90～像素                92～NMOS转换晶体管
94～NMOS转换晶体管      96～第一电容器
98～第二电容器          100～PMOS驱动晶体管
102～OLED装置           104～PMOS晶体管
110～像素               112～转换晶体管
114～转换晶体管         124～转换晶体管
116～第一电容器         118～第二电容器
120～PMOS驱动晶体管     122～OLED装置
150～驱动装置           152～水平位移寄存器
154～垂直位移寄存器     156～电位转换器
158～数字模拟转换器     160～驱动电路
162～像素阵列           130～像素
具体实施方式
结合附图说明本发明的实施例如下。
图1是本发明的一实施例中电致发光装置中一像素10的电路图。像素10包含了转换晶体管12，转换晶体管14，第一电容器16，第二电容器18，驱动晶体管20和OLED装置22。转换晶体管12包含一栅极(未编号)耦接于一扫描线SL，一源极(未编号)耦接于一数据线DL，以及一漏极(未编号)。该转换晶体管14包含一栅极栅极(未编号)耦接于一扫描线SL，一漏极(未编号)耦接于该转换晶体管12的漏极，以及一源极(未编号)。该转换晶体管12和转换晶体管14为N型金属氧半导体(NMOS)。在另一例子中，该像素10可以只包含单一转换晶体管。
驱动晶体管20是P型金属氧半导体(PMOS)，包含一栅极(未编号)，一源极(未编号)耦接于一电压Vdd，以及一漏极(未编号)。该第一电容器16包含一端点(未编号)耦接于电压Vdd，以及另一端点(未编号)耦接于驱动晶体管20的栅极。第二电容器18包含一端点(未编号)耦接于电压Vdd，另一端点(未编号)耦接于驱动晶体管20的栅极。OLED装置22包含一阳极(未编号)耦接于驱动晶体管20的漏极，以及一阴极(未编号)耦接于电压VSS。
第一电容器16和第二电容器18并联，其功用是储存跨过驱动晶体管20的栅极和源极的跨电压VGS。如果第一电容器16和第二电容器18其中之一故障了，例如变成短路或断路，另一电容器可以使像素10维持适当的功能。在故障事件发生时，该故障的电容器将以例如激光的方式从像素10中切断连接。在其它的例子中，像素10包含至少一第三电容器并联于该第一电容器16和第二电容器18，并可以包含额外的并联电容器。
图2是为本发明的一实施例的电致发光装置中像素30的概念图。像素30代表图1中像素10的电路结构概念设计。像素30包含一转换晶体管32，第一电容器36，第二电容器38，驱动晶体管40和OLED装置42。第一电容器36和第二电容器38并联而且对应于像素10中的第一电容器16和第二电容器18。转换晶体管32即相当于像素10中的转换晶体管12或转换晶体管14只取其一。驱动晶体管40和OLED装置42对应于像素10中的驱动晶体管20和OLED装置22。除了现有单一电容器所使用的面积之外第一电容器36和第二电容器38另占用一面积。
图3是本发明的一实施例的像素50的电路图。像素50包含转换晶体管52和转换晶体管54，一第一电容器56，一第二电容器58，一驱动晶体管60和一OLED装置62。转换晶体管52和转换晶体管54是NMOS。驱动晶体管60亦是NMOS，包含一栅极(未编号)，一漏极(未编号)耦接至电压Vdd，以及一源极(未编号)。第一电容器56和第二电容器58并联互相耦接，其功用是储存跨该驱动晶体管60栅极和源极的跨电压VGS。第一电容器56包含一端点(未编号)耦接至OLED装置62的一阳极(未编号)，而另一端点(未编号)耦接至驱动晶体管60的栅极。第二电容器58包含一端点(未编号)耦接至OLED装置62的阳极(未编号)，而另一端点(未编号)耦接至驱动晶体管60的栅极。OLED装置62的阳极耦接至驱动晶体管60的源极，而阴极(未编号)耦接至电压VSS。
如同像素10的情况一般，如果第一电容器56或第二电容器58其中之一发生短路或断路的故障，另一电容器仍然可以维持像素50的运作。在故障发生时，该坏掉的电容器会被切断与像素50电路的连接。可引申的是，像素50可以包含一或多个额外电容器与第一电容器56和第二电容器58并联耦接。
图4是本发明另一实施例像素70的电路图。像素70包含一转换晶体管72，一第一电容器76，一第二电容器78，一驱动晶体管80和一OLED装置82。转换晶体管72和驱动晶体管80是PMOS。第一电容器76和第二电容器78并联耦接。第一电容器76包含一端点(未编号)连接至电压VSS，而另一端点(未编号)连接至驱动晶体管80的栅极。第二电容器78包含一端点耦接至电压VSS，另一端点耦接至驱动晶体管80的栅极。驱动晶体管80包含一源极连接至电压Vdd，以及一漏极连接至OLED装置82的阳极。OLED装置82的阴极耦接至电压VSS。
如同像素10的状况一般，如果第一电容器76和第二电容器78其中之一因短路或断路而故障，另一电容器仍然可以维持像素70的运作。在故障发生时，该坏掉的电容器会被切断与像素70电路的连接。可引申的是，像素70可以包含一或多个额外电容器与第一电容器76和第二电容器78并联耦接。
图5是本发明另一实施例，像素90的电路图。像素90包含NMOS转换晶体管92和NMOS转换晶体管94，一第一电容器96，一第二电容器98，一PMOS驱动晶体管100，一OLED装置102和一PMOS晶体管104。PMOS驱动晶体管100和PMOS晶体管104共同组成一电流镜射电路，提供流经PMOS晶体管104的IDATA的复本，用以流过PMOS驱动晶体管100。
NMOS转换晶体管92包含一栅极(未编号)耦接于一写入扫描线WS，一源极(未编号)耦接于一数据线DL，以及一漏极(未编号)。NMOS转换晶体管94包含一栅极(未编号)耦接于一删除扫描线ES，一漏极(未编号)耦接于该NMOS转换晶体管92的漏极，以及一源极(未编号)。第一电容器96和第二电容器98并联耦接，功用是储存跨PMOS驱动晶体管100的栅极(未编号)和源极(未编号)的跨电压VGS。
如同像素10的状况一般，如果第一电容器96和第二电容器98其中之一因短路或断路而故障，另一电容器仍然可以维持像素90的运作。在故障发生时，该坏掉的电容器会被切断与像素90电路的连接。可引申的是，像素90可以包含一或多个额外电容器与第一电容器96和第二电容器98并联耦接。
图6是本发明实施例之一，像素110的电路图。像素110包含转换晶体管112，转换晶体管114和转换晶体管124，一第一电容器116，一第二电容器118，一PMOS驱动晶体管120，以及一OLED装置122。转换晶体管114和转换晶体管124组成一电流复制电路，用以提供流经PMOS驱动晶体管120的IDATA的复本，用于流过转换晶体管124。第一电容器116和第二电容器118互相并联耦接，其功用是储存跨PMOS驱动晶体管120的栅极(未编号)和源极(未编号)的跨电压VGS。
如同像素10的状况一般，如果第一电容器116和第二电容器118其中之一因短路或断路而故障，另一电容器仍然可以维持像素110的运作。在故障发生时，该坏掉的电容器与像素110电路的连接会被切断。可引申的是，像素110可以包含一或多个额外电容器与第一电容器116和第二电容器118并联耦接。
图7A和图7B是本发明实施例中修补像素130的方法图。如图7A所示，像素130具有与图1的像素10相似结构，但是第二电容器18的其中一端是悬置的。如图7B所示，如果第一电容器16因短路或断路而故障，则第一电容器16到驱动晶体管20间的连结被移除。而第二电容器18的悬置端则被连接上驱动晶体管20。这方面的修补工作是使用激光来完成。
图8是本发明的一实施例的驱动装置150方块图。驱动装置150包含一水平位移寄存器(horizontal shift register)152，一垂直位移寄存器(vertical shift register)154，电位转换器(level shifter)156，数字模拟转换器(DAC)158，驱动电路160和像素阵列162。每一驱动电路160耦接至一行或一列像素。如果驱动电路160其中之一故障了，对应的行像素就不能运作，造成面板线缺陷(line defect)。
每一驱动电路160包含与电容器接连的一电流复制电路或电流镜射电路。电容器之间互相并联，其功用是储存跨一驱动晶体管的栅极和源极之间的跨电压VGS。如果其中一电容器故障，至少另一电容器可以维持驱动装置150的运作。在故障发生的时候，故障的电容器会被切断连接。从另一方面来看，电容器其中之一连接至该驱动晶体管，而其它的为悬置。如果该电容器故障了，便执行修补程序，移除该故障电容器并从剩下电容器选一个连接上该驱动晶体管。
本发明虽以较佳实施例揭露如上，然其并非用以限定本发明的范围，任何熟习此项技艺者，在不脱离本发明的精神和范围内，当可做各种的更动与润饰，因此本发明的保护范围当视后附的申请专利范围所界定者为准。

Claims (21)

1.一种像素单元，包含：
至少一开关组件，耦接一数据线及一扫描线，以传送一来自该数据线的信号；
一并联电容组，耦接至该开关组件，以储存该信号；
一驱动晶体管，具有一栅极耦接至该并联电容组及该开关组件；以及
一发光二极管，耦接该驱动晶体管。
2.如权利要求1所述的像素单元，其中，该并联电容组中包含多个电容器，所述电容器的一端互相耦接。
3.如权利要求1所述的像素单元，其中，该发光二极管包含一有机发光二极管。
4.如权利要求1所述的像素单元，更进一步包含一电流复制电路，用以复制电流经所述数据线其中之一的一电流。
5.如权利要求1所述的像素单元，更进一步包含一电流镜射电路，用以复制流经所述数据线其中之一的一电流。
6.如权利要求1所述的像素单元，其中，该信号是该驱动晶体管的栅极和源极间的跨电压。
7.一电致发光装置，包含：
一像素阵列；以及
一驱动装置，用以驱动该像素阵列，包含一驱动晶体管和一并联电容组耦接于该驱动晶体管的栅极，其中，该并联电容组储存跨该驱动晶体管栅极和源极的电压值。
8.如权利要求7所述的电致发光装置，其中，该并联电容组中包含多个电容器，所述电容器的一端互相耦接。
9.如权利要求7所述的电致发光装置，更进一步包含一有机发光二极管，受该驱动装置驱动而发光。
10.如权利要求7所述的电致发光装置，更进一步包含一聚合物发光二极管，受该驱动装置驱动而发光。
11.如权利要求7所述的电致发光装置，更进一步包含一电流复制电路，用以复制驱动该像素阵列中一或多像素的一数据电流。
12.如权利要求7所述的电致发光装置，更进一步包含一电流镜射电路，用以复制驱动该像素阵列中一或多像素的一数据电流。
13.如权利要求7所述的电致发光装置，其中，该驱动装置由低温多晶硅装置组成。
14.一种修补像素的方法，包含：
在一像素中提供多个电容器，所述电容器包含一第一电容器与一第二电容器；
在一像素中提供一驱动晶体管；
将该第一电容器耦接到该驱动晶体管，将该第二电容器的第一端与该第一电容器耦接；以及
在该第一电容器中储存一电压值，用以驱动该驱动晶体管。
15.如权利要求14所述的修补像素的方法，包含将该第二电容器与该第一电容器并联。
16.如权利要求14所述的修补像素的方法，包含将该第一电容器从该驱动晶体管切断。
17.如权利要求14所述的修补像素的方法，其中，储存该电压值的步骤包含储存该驱动晶体管的栅极和源极之间的跨电压。
18.一种修补电致发光装置的方法，包含：
在该电致发光装置中提供一像素阵列；
提供多个驱动电路用以驱动该像素阵列；
在每一驱动电路中提供一第一电容器及一第二电容器；
在每一驱动电路中提供一驱动晶体管；以及
将该第一电容器耦接到该驱动晶体管的栅极，将该第二电容器的一端耦接至该第一电容器；以及
将该驱动电路其中之一耦接到该像素阵列中对应的一行像素上。
19.如权利要求16所述的修补电致发光装置的方法，包含将该第二电容器耦接到该驱动晶体管上。
20.如权利要求16所述的修补电致发光装置的方法，包含使用激光将该第一电容器从该驱动晶体管切断。
21.如权利要求16所述的修补电致发光装置的方法，包含将该驱动晶体管的栅极和源极之间的跨电压储存在该第一电容器中。
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