WO2016011687A1 - 用于oled材料蒸镀的加热装置 - Google Patents

用于oled材料蒸镀的加热装置 Download PDF

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Publication number
WO2016011687A1
WO2016011687A1 PCT/CN2014/084450 CN2014084450W WO2016011687A1 WO 2016011687 A1 WO2016011687 A1 WO 2016011687A1 CN 2014084450 W CN2014084450 W CN 2014084450W WO 2016011687 A1 WO2016011687 A1 WO 2016011687A1
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Prior art keywords
heat conduction
temperature
oled material
jacket
crucible
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English (en)
French (fr)
Inventor
刘亚伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/426,979 priority Critical patent/US9790588B2/en
Publication of WO2016011687A1 publication Critical patent/WO2016011687A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/24—Crucible furnaces
    • H05B6/26—Crucible furnaces using vacuum or particular gas atmosphere
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements
    • H05B6/367—Coil arrangements for melting furnaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present invention relates to the field of OLED processes, and more particularly to a heating device for vapor deposition of OLED materials. Background technique
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal display
  • An OLED typically includes: a substrate, an ITO transparent anode disposed on the substrate, an organic material layer disposed on the ITO transparent anode, and a cathode disposed on the organic material layer.
  • the organic material layer further includes: a hole injection layer (HIL;), a hole transport layer (HTL;) disposed on the hole injection layer, a light-emitting layer (EML;) disposed on the hole transport layer, and being placed in the light
  • An electron transport layer (ETL;) on the layer, an electron injection layer (EIL) placed on the electron transport layer, in order to improve efficiency, the light-emitting layer usually employs a host/guest doping system.
  • the film forming method of vacuum thermal evaporation is to change the sublimation type or the molten type OLED material from a solid state to a vapor state by heating in a vacuum environment of less than 5 X 1 (T 5 Pa), and the high-speed moving gaseous molecules reach.
  • the glass substrate is deposited, condensed, and solidified on the substrate to form a solid film of the OLED material.
  • the existing heating device for OLED material evaporation includes a crucible 100 for accommodating the OLED material 300 and A set of heating coils 200 outside the crucible 100, the top center of the crucible 100 is provided with an air outlet 150.
  • FIG. 2 is a schematic view showing the working process of the heating coil 200, and the upper part 210 and the main part of the heating coil 200 are known from the figure.
  • the temperature of 230 cannot be separately controlled, and only the temperature rise or the temperature can be synchronously synchronized.
  • Fig. 3 is a schematic view showing the operation of the conventional heating device for vapor deposition of OLED materials.
  • the group of heating coils 200 is energized and housed inside the heating device.
  • the OLED material 300 begins to heat up; when the temperature rises to the vaporization temperature of the OLED material 300, the gaseous molecules of the OLED material 300 overflow from the vent 150 and deposit to the base.
  • the object of the present invention is to provide a heating device for vapor deposition of an OLED material, which can reduce the temperature of the OLED material while maintaining a high temperature of the air outlet, and prevent the gaseous molecules of the OLED material from solidifying at the air outlet, thereby avoiding clogging. Venting holes ensure production efficiency and eliminate the risk of OLED materials changing due to contact with water vapor and oxygen.
  • the present invention provides a heating device for vapor deposition of an OLED material, comprising: a crucible for accommodating an OLED material, the crucible comprising a body portion and an upper cover portion connected to the body portion, the upper cover portion
  • the top center is provided with an air outlet hole, and further includes a lower heating coil sleeved on a periphery of the body portion, an upper heating coil sleeved on a periphery of the upper cover portion, and a lower portion disposed between the body portion and the lower heating coil a heat conduction temperature jacket, an upper heat conduction temperature jacket disposed between the upper cover portion and the upper heating coil, and an insulation ring disposed between the upper and lower heat conduction temperature jackets; the upper and lower heating coils
  • a power source is respectively connected to respectively control the heating temperature of the upper cover portion and the body portion.
  • the lower heat conduction temperature jacket is fixed on a platform.
  • the bottom of the lower heat conduction temperature jacket is provided with a bump
  • the platform is provided with a groove corresponding to the protrusion
  • the protrusion is placed in the groove
  • the heat is embedded between the protrusion and the groove a pad to fix the lower thermal isothermal cover to the platform.
  • the bottom of the lower heat conduction temperature jacket is provided with a lower ring groove, and the bottom of the upper heat conduction temperature jacket is provided with an upper ring groove, and the heat insulation ring is embedded in the upper and lower ring grooves, The lower heat conduction equalization sleeve is separated.
  • the inner diameter of the lower heat conduction temperature jacket is larger than the outer diameter of the body portion of the crucible, and the difference between the two is not more than 10 mm; the inner diameter of the upper heat conduction jacket is larger than the outer diameter of the upper cover portion of the crucible, and the difference between the two The value is not more than 10mm.
  • the height of the upper thermal conductive jacket is greater than the height of the upper cover of the crucible, and the difference between the two is not more than 10 mm.
  • the upper and lower heating coils can have a heating temperature ranging from room temperature to 1300 ° C and a temperature control accuracy of 5 ° C or less.
  • the material of the upper and lower heat conduction isothermal sleeves is stainless steel.
  • the material of the heat insulation ring is ceramic; the material of the heat insulation pad is ceramic.
  • the heating device for vapor deposition of the OLED material further includes a heat conducting temperature equalizing plate disposed on the top end of the upper heat conducting uniform temperature sleeve, wherein a center of the heat conducting temperature equalizing plate is provided with a through hole, and the diameter of the through hole Greater than the diameter of the vent.
  • the heating device for vapor deposition of an OLED material of the present invention controls the heating of the upper lid portion and the body portion by providing two upper and lower heating coils and two upper and lower heat conducting uniform temperature jackets.
  • the temperature can reduce the temperature of the OLED material while maintaining the high temperature of the vent hole of the crucible, avoiding the solidification of the gaseous molecules of the OLED material at the vent hole, thereby avoiding clogging of the vent hole, ensuring production efficiency, and preventing the OLED material from contacting the water vapor, The risk of changing oxygen.
  • FIG. 1 is a schematic structural view of a conventional heating device for vapor deposition of an OLED material
  • FIG. 2 is a schematic view showing a working process of a heating coil of a conventional heating device for vapor deposition of an OLED material
  • FIG. 3 is a schematic view showing the operation of a conventional heating device for vapor deposition of an OLED material
  • FIG. 4 is a schematic structural view of an embodiment of a heating device for vapor deposition of an OLED material according to the present invention
  • Figure 5 is a schematic view showing the structure of another embodiment of a heating apparatus for vapor deposition of an OLED material of the present invention.
  • Fig. 6 is a schematic view showing the operation of the upper heating coil and the lower heating coil of the heating device for vapor deposition of an OLED material according to the present invention. detailed description
  • FIG. 4 is a schematic structural view of an embodiment of a heating device for vapor deposition of an OLED material according to the present invention.
  • the heating device for vapor deposition of the OLED material includes a crucible 1 for accommodating the OLED material 10.
  • the crucible 1 includes a body portion 11 and an upper lid portion 13 connected to the body portion 11, and a top end of the upper lid portion 13 is provided There is an air outlet 131.
  • the OLED material 10 may be an organic material for forming an organic layer of an OLED, or a metal material such as LIF, Mg/Ag, Li/Al for forming a OLED metal cathode.
  • the venting holes 131 are used to provide a passage for the gaseous molecules of the OLED material to overflow after being heated and vaporized.
  • the heating device for the evaporation of the OLED material further includes a lower heating coil 2 disposed on the periphery of the main body portion 2, and an upper heating coil 3 sleeved on the periphery of the upper cover portion 13. a lower heat conduction temperature jacket 4 between the main body portion 11 and the lower heating coil 2, an upper heat conduction temperature jacket 5 disposed between the upper cover portion 13 and the upper heating coil 3, and a heat conduction uniform temperature provided on the upper and lower sides A set of insulation rings 6 between 5 and 4.
  • the upper and lower heating coils 3, 2 are respectively connected to a power source for controlling the heating temperatures of the upper cover portion 13 and the body portion 11, respectively.
  • the upper and lower heating coils 3, 2 can be heated at a temperature ranging from room temperature to 1300 ° C, and the temperature control precision is within 5 ° C. It is suitable for heating organic materials with lower vaporization temperature and heating vaporization. Higher temperature metal materials.
  • the temperature of the upper cover portion 13 and the main body portion 11 may be different, so that the temperature of the main body portion 11 can be reduced, and the upper cover portion 13 and the air outlet hole 131 can still maintain a relatively high temperature, thereby avoiding The gaseous molecules of the OLED material are coagulated and solidified at the air outlet 131 to avoid clogging the air outlet 131.
  • the upper and lower heat conduction temperature jackets 5 and 4 function to conduct heat and uniformize the temperature, and respectively ensure that the upper cover portion 13 and the body portion 11 of the crucible 1 are heated and hooked.
  • the upper and lower heat conduction temperature jackets 5 and 4 are separated by a heat insulation ring 6 to avoid mutual heat transfer between the upper and lower heat conduction temperature jackets 5 and 4, and affect temperature control.
  • the lower heat conduction temperature jacket 4 is provided with a lower ring groove 41 at the top
  • the upper heat conduction temperature jacket 5 is provided with an upper ring groove 51 at the bottom
  • the heat insulation ring 6 is embedded in the upper and lower rings. Inside the slots 51, 41, the upper and lower thermally conductive blankets 5, 4 are separated.
  • the inner diameter of the lower heat conduction temperature jacket 4 is larger than the outer diameter of the body portion 11 of the crucible 1, and the difference between the two is not more than 10 mm;
  • the inner diameter of 5 is larger than the outer diameter of the upper cover portion 13 of the crucible 1, and the difference between the two is not more than 10 mm.
  • the height of the upper heat conduction temperature jacket 5 is greater than the height of the upper cover portion 13 of the crucible 1, and the difference between the two is not more than 10 mm. On the one hand, the temperature at the air outlet 131 is maintained at a high temperature, and on the one hand, the crucible is easily taken out. 1.
  • the materials for making the upper and lower heat conduction temperature jackets 5 and 4 should have good thermal conductivity, can withstand high temperatures of 1300 ° ⁇ , are not easily oxidized, do not continuously vent at high temperatures, do not release dust, and are suitable for vacuum environments.
  • the material of the upper and lower heat conduction blankets 5, 4 is stainless steel.
  • the material for making the heat insulating ring 6 should have excellent heat insulating properties and be suitable for use in a vacuum environment.
  • the material of the heat insulating ring 6 is ceramic.
  • the bottom heat conduction temperature jacket 4 is fixed on a platform 7. Specifically, the lower heat conduction temperature jacket 4 is provided with a bump 42 at the bottom, and the platform 7 is provided with a groove 72 corresponding to the bump 42. The bump 42 is disposed in the recess 72, and a heat insulating pad 8 is embedded between the bump 42 and the recess 72, thereby The lower heat conduction temperature jacket 4 is fixed to the platform 7 and ensures the verticality of the entire heating device.
  • the material of the heat insulating mat 8 should also have excellent heat insulating properties and be suitable for use in a vacuum environment.
  • the material of the heat insulating mat 8 is ceramic.
  • FIG. 5 it is a schematic structural view of another embodiment of a heating device for vapor deposition of an OLED material according to the present invention.
  • a heat conducting temperature equalizing plate 9 is disposed on the top end of the upper heat conducting uniform temperature sleeve 5 to further ensure that the air outlet 131 maintains a relatively high temperature to prevent the air outlet hole 131 from being blocked.
  • a through hole 91 is defined in the center of the heat conducting temperature equalizing plate 9, and the diameter of the through hole 91 is larger than the diameter of the air outlet hole 131, so that the overflow passage of the gaseous molecules of the OLED material is unblocked.
  • the material of the heat conduction temperature equalizing plate 9 is stainless steel.
  • FIG. 6 is a schematic diagram of the working process of the upper heating coil 3 and the lower heating coil 2 of the heating device for vapor deposition of the OLED material of the present invention.
  • the process of using the heating device for vapor deposition of the OLED material is to first energize the upper heating coil 3 to heat the upper cover portion 13 of the crucible 1 to the upper cover portion 13 to the OLED material 10 Vaporing temperature, and controlling the temperature to be at least 5 ° C lower than the cracking temperature of the OLED material 10; energizing the lower heating coil 2, heating the body portion 11 of the crucible 1 to the body portion 11 to raise the temperature
  • the vaporization temperature of the OLED material 10 is subjected to evaporation of the OLED material 10; after the evaporation is completed, the lower heating coil 2 is first powered off, and the body portion 11 of the crucible 1 is cooled, while the upper heating coil 3 is still Keeping at the vaporization temperature of the OLED material 10, the gaseous molecules of the OLED material 10 are
  • the heating device for EV evaporation of the present invention controls the heating temperature of the upper cover portion and the body portion by providing two upper and lower heating coils and two upper and lower heat conduction temperature jackets. It can reduce the temperature of the OLED material while maintaining the high temperature of the venting hole of the enamel, avoiding the solidification of the gaseous molecules of the OLED material at the vent hole, thereby avoiding clogging of the vent hole, ensuring production efficiency, and preventing the OLED material from contacting the water vapor and oxygen. And the risk of changing ⁇ .

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

提供一种用于OLED材料蒸镀的加热装置，包括一用于容纳OLED材料（10）的坩埚（1）、套设于坩埚（1）的本体部（11）外围的下加热线圈（2）、套设于坩埚（1）的上盖部（13）外围的上加热线圈（3）、设于所述本体部（11）与下加热线圈（2）之间的下导热均温套（4）、设于所述上盖部（13）与上加热线圈（3）之间的上导热均温套（5）、及设于上、下导热均温套（5、4）之间的一隔热环（6）；所述上、下加热线圈（3、2）分别连接一电源，分别控制所述上盖部（13）与本体部（11）的加热温度。该加热装置能够避免OLED材料（10）的气态分子在坩埚（1）的出气孔（131）处凝结、固化，避免堵塞出气孔（131）。

Description

用于 OLED材料蒸镀的加热装置
技术领域
本发明涉及 OLED制程领域， 尤其涉及一种用于 OLED材料蒸镀的加 热装置。 背景技术
有机发光二极管显示器 （Organic Light Emitting Diode, OLED) 是一种 极具发展前景的平板显示技术， 它不仅具有十分优异的显示性能， 还具有 自发光、 结构简单、 超轻薄、 响应速度快、 宽视角、 低功耗及可实现柔性 显示等特性， 被誉为 "梦幻显示器"， 再加上其生产设备投资远小于液晶显 示器 （Liquid Crystal Display, LCD) , 得到了各大显示器厂家的青睞， 已成 为显示技术领域中第三代显示器件的主力军。
OLED通常包括： 基板、 置于基板上的 ITO 透明阳极、 置于 ITO 透明 阳极上的有机材料层， 以及置于有机材料层上的阴极。 有机材料层又包括： 空穴注入层 (HIL；)、 置于空穴注入层上的空穴传输层 (HTL；)、 置于空穴传输 层上的发光层 (EML；)、 置于发光层上的电子传输层 (ETL；)、 置于电子传输层 上的电子注入层 (EIL)， 为了提高效率， 发光层通常采用主 /客体摻杂系统。
OLED 有机材料薄膜的制备主要有两种工艺路线： 对于高分子 OLED 有机材料， 采用溶液成膜方式， 但这种工艺目前还处于试验室研究阶段； 对于小分子 OLED有机材料， 目前普遍采用真空热蒸镀的成膜方式， 这种 工艺方法被平板显示行业的大多数工厂采用， 比如三星、 LG等。
真空热蒸镀的成膜方式是在低于 5 X l(T5Pa的真空环境下， 通过加热的 方式使升华型或熔融型的 OLED材料由固态变为蒸气状态， 高速运动的气 态分子到达玻璃基板并在基板上沉积、 凝结、 固化， 形成 OLED材料的固 体薄膜。 如图 1所示， 现有的用于 OLED材料蒸镀的加热装置包括用于容 纳 OLED材料 300的坩埚 100与设于坩埚 100外部的一组加热线圈 200， 该坩埚 100的顶部中心设有一出气孔 150。图 2为该一组加热线圈 200的工 作过程示意图， 由图可知该组加热线圈 200的上部 210与主体部 230的温 度无法分开控制， 只能同步升温或降温。 图 3为该现有的用于 OLED材料 蒸镀的加热装置的工作过程示意图， 首先对该组加热线圈 200 通电， 容纳 于加热装置内部的 OLED材料 300开始升温；当温度升高至 OLED材料 300 的汽化温度时， OLED材料 300的气态分子由出气孔 150溢出并沉积至基 板上； 当 OLED材料 300快要蒸镀完或试验间隙较长的情况下， 需要对加 热装置进行降温时， 对该组加热线圈 200断电， 加热装置整体降温， OLED 材料 300的气态分子会在出气孔 150处固化堆积， 导致出气孔 150被堵塞， 需要中断生产过程， 进行开腔处理。 这样不仅降低了生产效率， 加大了工 作量， 也会带来因 OLED材料暴露在空气中导致 OLED材料接触水汽、 氧 气而变 ^的风险。 发明内容
本发明的目的在于提供一种用于 OLED材料蒸镀的加热装置， 能够实 现对 OLED材料降温的同时使出气孔保持较高的温度， 避免 OLED材料的 气态分子在出气孔处固化，从而避免堵塞出气孔，保证生产效率，杜绝 OLED 材料因接触水汽、 氧气而变^的风险。
为实现上述目的， 本发明提供一种用于 OLED材料蒸镀的加热装置， 包括一用于容纳 OLED材料的坩埚， 该坩埚包括本体部及连接于本体部的 上盖部， 该上盖部的顶端中心设有一出气孔； 还包括套设于所述本体部外 围的下加热线圈、 套设于所述上盖部外围的上加热线圈、 设于所述本体部 与下加热线圈之间的下导热均温套、 设于所述上盖部与上加热线圈之间的 上导热均温套、 及设于上、 下导热均温套之间的一隔热环； 所述上、 下加 热线圈分别连接一电源， 分别控制所述上盖部与本体部的加热温度。
所述下导热均温套固定于一平台上。
所述下导热均温套底部设有凸块， 所述平台对应该凸块设有凹槽， 所 述凸块置于凹槽内， 且所述凸块与凹槽之间嵌设有隔热垫， 从而将所述下 导热均温套固定于平台上。
所述下导热均温套顶部设有下环槽， 所述上导热均温套底部设有上环 槽， 所述隔热环嵌设于所述上、 下环槽内， 将所述上、 下导热均温套分隔 开。
所述下导热均温套的内径大于坩埚的本体部的外径， 且二者差值不大 于 10mm; 所述上导热均温套的内径大于坩埚的上盖部的外径， 且二者差值 不大于 10mm。
所述上导热均温套的高度大于坩埚的上盖部的高度， 且二者差值不大 于 10mm。
所述上、 下加热线圈的可加热温度范围在室温至 1300°C之间， 温度控 制精度在 5°C以内。
所述上、 下导热均温套的材料为不锈钢。 所述隔热环的材料为陶瓷； 所述隔热垫的材料为陶瓷。
所述用于 OLED材料蒸镀的加热装置， 还包括一盖设于所述上导热均 温套顶端的导热均温板， 该导热均温板的中心设有一通孔， 且该通孔的直 径大于所述出气孔的直径。
本发明的有益效果： 本发明的用于 OLED材料蒸镀的加热装置， 通过 设置上、 下两组加热线圈及上、 下两个导热均温套， 分别控制坩埚上盖部 与本体部的加热温度， 能够实现对 OLED材料降温的同时使坩埚的出气孔 保持较高的温度， 避免 OLED材料的气态分子在出气孔处固化， 从而避免 堵塞出气孔， 保证生产效率， 杜绝 OLED材料因接触水汽、 氧气而变^的 风险。 附图说明
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为现有的用于 OLED材料蒸镀的加热装置的结构示意图； 图 2为现有的用于 OLED材料蒸镀的加热装置的加热线圈的工作过程 示意图；
图 3为现有的用于 OLED材料蒸镀的加热装置的工作过程示意图； 图 4为本发明用于 OLED材料蒸镀的加热装置的一实施例的结构示意 图；
图 5为本发明用于 OLED材料蒸镀的加热装置的另一实施例的结构示 意图；
图 6为本发明用于 OLED材料蒸镀的加热装置的上加热线圈与下加热 线圈的工作过程示意图。 具体实施方式
请参阅图 4， 为本发明用于 OLED材料蒸镀的加热装置的一实施例的 结构示意图。 该用于 OLED材料蒸镀的加热装置包括一用于容纳 OLED材 料 10的坩埚 1， 该坩埚 1包括本体部 11及连接于本体部 11的上盖部 13， 该上盖部 13的顶端中心设有一出气孔 131。 所述 OLED材料 10可以是用 于成膜 OLED 有机层的有机材料， 也可以是用于成膜 OLED 金属阴极的 LIF、 Mg/Ag、 Li/Al等金属材料。 所述出气孔 131 用于提供 OLED材料受 热汽化后的气态分子溢出的通道。 重点的， 该用于 OLED材料蒸镀的加热装置还包括套设于所述本体部 11外围的下加热线圈 2、 套设于所述上盖部 13外围的上加热线圈 3、 设于 所述本体部 11与下加热线圈 2之间的下导热均温套 4、 设于所述上盖部 13 与上加热线圈 3之间的上导热均温套 5、 及设于上、 下导热均温套 5、 4之 间的一隔热环 6。
所述上、 下加热线圈 3、 2 分别连接一电源， 分别控制所述上盖部 13 与本体部 11 的加热温度。 所述上、 下加热线圈 3、 2 的可加热温度范围在 室温至 1300°C之间， 温度控制精度在 5°C以内， 既适用于加热汽化温度较 低的有机材料， 也适用于加热汽化温度较高的金属材料。
由于所述上盖部 13与本体部 11的加热温度分别受上、 下加热线圈 3、
2的独立控制， 所以所述上盖部 13与本体部 11的温度可不相同， 可以实现 降低所述本体部 11 温度的同时， 使上盖部 13 与出气孔 131仍保持较高的 温度， 避免 OLED材料的气态分子凝结、 固化于出气孔 131处， 避免堵塞 出气孔 131。
所述上、 下导热均温套 5、 4起到传导热量和使温度均一化的作用， 分 别保证所述坩埚 1的上盖部 13、 本体部 11的受热均勾。 所述上、 下导热均 温套 5、 4 由一隔热环 6分隔开， 避免上、 下导热均温套 5、 4之间相互传 热、 影响温度控制。 具体的， 所述下导热均温套 4顶部设有下环槽 41， 所 述上导热均温套 5底部设有上环槽 51， 所述隔热环 6嵌设于所述上、 下环 槽 51、 41 内， 从而将所述上、 下导热均温套 5、 4分隔开。
进一步的， 为应对热胀冷縮现象， 设置所述下导热均温套 4 的内径大 于坩埚 1的本体部 11的外径， 且二者差值不大于 10mm ; 设置所述上导热 均温套 5的内径大于坩埚 1的上盖部 13的外径，且二者差值不大于 10mm。
所述上导热均温套 5的高度大于坩埚 1的上盖部 13的高度， 且二者差 值不大于 10mm， 一方面保持出气孔 131处保持较高的温度， 一方面便于取 出所述坩埚 1。
制作所述上、下导热均温套 5、4的材料应具备导热性好、可以耐受 1300 °〇的高温、 不易氧化、 在高温下不会持续排气、 不释放灰尘、 适合在真空 环境下使用等性能， 优选的， 所述上、 下导热均温套 5、 4的材料为不锈钢。
制作所述隔热环 6 的材料应具备优良的隔热性能并适合在真空环境下 使用， 优选的， 所述隔热环 6的材料为陶瓷。
所述下导热均温套 4固定于一平台 7上， 具体的， 所述下导热均温套 4 底部设有凸块 42， 所述平台 7对应该凸块 42设有凹槽 72， 所述凸块 42置 于凹槽 72内， 且所述凸块 42与凹槽 72之间嵌设有隔热垫 8， 从而将所述 下导热均温套 4固定于平台 7上， 并保证整个加热装置的竖直度。
制作所述隔热垫 8 的材料亦应具备优良的隔热性能并适合在真空环境 下使用， 优选的， 所述隔热垫 8的材料为陶瓷。
请参阅图 5， 为本发明用于 OLED材料蒸镀的加热装置的另一实施例 的结构示意图。 该实施例在上述实施例的基础上， 于所述上导热均温套 5 的顶端盖设一导热均温板 9， 进一步保证出气孔 131处保持较高的温度， 避 免出气孔 131被堵塞。 该导热均温板 9的中心设有一通孔 91， 且该通孔 91 的直径大于所述出气孔 131 的直径， 使 OLED材料气态分子的溢出通道畅 通。
所述导热均温板 9的材料为不锈钢。
请参阅图 6， 为本发明用于 OLED材料蒸镀的加热装置的上加热线圈 3 与下加热线圈 2的工作过程示意图。 使用该用于 OLED材料蒸镀的加热装 置的过程为， 首先给所述上加热线圈 3通电， 加热所述坩埚 1的上盖部 13 至所述上盖部 13升温至所述 OLED材料 10的汽化温度， 并控制该温度比 所述 OLED材料 10的裂解温度低至少 5°C ; 给所述下加热线圈 2通电， 加 热所述坩埚 1的本体部 11至所述本体部 11升温至所述 OLED材料 10的汽 化温度， 进行 OLED材料 10的蒸镀； 蒸镀完成后， 先给所述下加热线圈 2 断电， 使所述坩埚 1 的本体部 11 降温， 同时所述上加热线圈 3 仍保持在 OLED材料 10的汽化温度， 避免 OLED材料 10的气态分子在所述出气孔 131处凝接、 固化， 避免所述出气孔 131被堵塞， 当所述本体部 11的温度 降至 200°C以下且不产生 OLED材料 10的气态分子时， 再给所述上加热线 圈 3断电， 使所述坩埚 1的上盖部 13逐渐降温。
综上所述， 本发明的用于 OLED材料蒸镀的加热装置， 通过设置上、 下两组加热线圈及上、 下两个导热均温套， 分别控制坩埚上盖部与本体部 的加热温度， 能够实现对 OLED材料降温的同时使坩埚的出气孔保持较高 的温度， 避免 OLED材料的气态分子在出气孔处固化， 从而避免堵塞出气 孔， 保证生产效率， 杜绝 OLED材料因接触水汽、 氧气而变^的风险。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明后附的权利要求的保护范围。

Claims

权 利 要 求
1、一种用于 OLED材料蒸镀的加热装置， 包括一用于容纳 OLED材料 的坩埚， 该坩埚包括本体部及连接于本体部的上盖部， 该上盖部的顶端中 心设有一出气孔， 还包括套设于所述本体部外围的下加热线圈、 套设于所 述上盖部外围的上加热线圈、 设于所述本体部与下加热线圈之间的下导热 均温套、 设于所述上盖部与上加热线圈之间的上导热均温套、 及设于上、 下导热均温套之间的一隔热环； 所述上、 下加热线圈分别连接一电源， 分 别控制所述上盖部与本体部的加热温度。
2、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 下导热均温套固定于一平台上。
3、 如权利要求 2所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 下导热均温套底部设有凸块， 所述平台对应该凸块设有凹槽， 所述凸块置 于凹槽内， 且所述凸块与凹槽之间嵌设有隔热垫， 从而将所述下导热均温 套固定于平台上。
4、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 下导热均温套顶部设有下环槽， 所述上导热均温套底部设有上环槽， 所述 隔热环嵌设于所述上、 下环槽内， 将所述上、 下导热均温套分隔开。
5、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 下导热均温套的内径大于坩埚的本体部的外径， 且二者差值不大于 10mm ; 所述上导热均温套的内径大于坩埚的上盖部的外径， 且二者差值不大于 10mm。
6、 如权利要求 5所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 上导热均温套的高度大于坩埚的上盖部的高度， 且二者差值不大于 10mm。
7、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 上、 下加热线圈的可加热温度范围在室温至 1300°C之间， 温度控制精度在 5°C以内。
8、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 上、 下导热均温套的材料为不锈钢。
9、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 其中， 所述 隔热环的材料为陶瓷； 所述隔热垫的材料为陶瓷。
10、 如权利要求 1所述的用于 OLED材料蒸镀的加热装置， 还包括一 盖设于所述上导热均温套顶端的导热均温板， 该导热均温板的中心设有一 通孔， 且该通孔的直径大于所述出气孔的直径。
11、 一种用于 OLED材料蒸镀的加热装置， 包括一用于容纳 OLED材 料的坩埚， 该坩埚包括本体部及连接于本体部的上盖部， 该上盖部的顶端 中心设有一出气孔， 还包括套设于所述本体部外围的下加热线圈、 套设于 所述上盖部外围的上加热线圈、 设于所述本体部与下加热线圈之间的下导 热均温套、 设于所述上盖部与上加热线圈之间的上导热均温套、 及设于上、 下导热均温套之间的一隔热环； 所述上、 下加热线圈分别连接一电源， 分 别控制所述上盖部与本体部的加热温度；
其中， 所述下导热均温套固定于一平台上；
其中， 所述下导热均温套底部设有凸块， 所述平台对应该凸块设有凹 槽， 所述凸块置于凹槽内， 且所述凸块与凹槽之间嵌设有隔热垫， 从而将 所述下导热均温套固定于平台上；
其中， 所述下导热均温套顶部设有下环槽， 所述上导热均温套底部设 有上环槽， 所述隔热环嵌设于所述上、 下环槽内， 将所述上、 下导热均温 套分隔开；
其中， 所述下导热均温套的内径大于坩埚的本体部的外径， 且二者差 值不大于 10mm; 所述上导热均温套的内径大于坩埚的上盖部的外径， 且二 者差值不大于 10mm;
其中， 所述上导热均温套的高度大于坩埚的上盖部的高度， 且二者差 值不大于 10mm;
其中， 所述上、 下加热线圈的可加热温度范围在室温至 1300°C之间， 温度控制精度在 5°C以内；
其中， 所述上、 下导热均温套的材料为不锈钢；
其中， 所述隔热环的材料为陶瓷； 所述隔热垫的材料为陶瓷。
PCT/CN2014/084450 2014-07-22 2014-08-15 用于oled材料蒸镀的加热装置 Ceased WO2016011687A1 (zh)

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