WO2015158048A1 - 真空蒸镀设备 - Google Patents

真空蒸镀设备 Download PDF

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Publication number
WO2015158048A1
WO2015158048A1 PCT/CN2014/082054 CN2014082054W WO2015158048A1 WO 2015158048 A1 WO2015158048 A1 WO 2015158048A1 CN 2014082054 W CN2014082054 W CN 2014082054W WO 2015158048 A1 WO2015158048 A1 WO 2015158048A1
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WIPO (PCT)
Prior art keywords
evaporation
substrates
vacuum
equipment according
holes
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PCT/CN2014/082054
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English (en)
French (fr)
Inventor
吴海东
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/435,726 priority Critical patent/US20170137929A1/en
Publication of WO2015158048A1 publication Critical patent/WO2015158048A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Definitions

  • the invention relates to the field of vacuum evaporation technology, and in particular to a vacuum evaporation equipment. Background technique
  • the process of evaporating or sublimating a substance to be film-formed in a vacuum and plating it onto a substrate is called vacuum evaporation or vacuum coating.
  • the vacuum coating process is widely used in the manufacturing process of equipment, for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, etc. of an organic light-emitting diode (OLED) display device.
  • the film was formed by a vacuum evaporation process.
  • the vacuum evaporation apparatus includes an evaporation chamber 3 in which an evaporation source 4 and a substrate 1 are disposed, and the substrate 1 is located directly above the evaporation source 4, and a vacuum is provided on the wall of the vapor deposition chamber 3.
  • the air vent 2 is connected to a vacuum pump (not shown) outside the vapor deposition chamber 3.
  • the evaporation source 4 evaporates the vaporized organic material molecules toward the substrate 1, and the vacuum pump continuously draws a vacuum to maintain the vacuum environment inside the vapor deposition chamber 3, so that the vaporized organic material molecules fly toward the substrate 1 to form a film.
  • the direction of the arrow in the figure indicates the flow direction of the molecules of the organic material.
  • the organic material is vapor-deposited on the substrate 1
  • a large amount of organic material is vapor-deposited on the wall of the vapor deposition chamber 3, so that a large amount of organic material is wasted, resulting in a low utilization rate of the organic material.
  • Embodiments of the present invention provide a vacuum evaporation apparatus capable of improving utilization of an organic material in a vacuum evaporation process.
  • Providing a vacuum evaporation apparatus including:
  • the evaporation chamber and the evaporation source disposed in the evaporation chamber further include: a plurality of substrates disposed in the evaporation chamber, the plurality of substrates being located at one side of the evaporation source opening;
  • the evaporation source opening forms a first spherical surface as a center of the sphere, and each of the plurality of substrates is tangent to the first spherical surface.
  • a hemispherical mask is disposed at the evaporation source opening, and the hemispherical mask is provided with a plurality of evaporation holes.
  • each of the evaporation holes on the hemispherical mask is respectively associated with each of the plurality of blocks
  • the substrates are facing each other.
  • the plurality of substrates include a first substrate and a plurality of second substrates disposed around the first substrate;
  • the plurality of evaporation holes on the hemispherical mask include a first evaporation hole facing the first substrate and a plurality of second evaporation holes disposed around the first evaporation hole;
  • the evaporation source is disposed on the rotating device, and the rotating device is configured to drive the evaporation source to rotate at a speed of the line connecting the first substrate and the first evaporation hole.
  • a plurality of vacuum suction holes are disposed on the wall of the evaporation chamber, and each of the vacuum extraction holes respectively corresponds to each of the plurality of substrates.
  • the vacuum evaporation apparatus further includes: a crystal plate and a reference crystal plate disposed in the evaporation chamber;
  • the reference crystal plate is provided with a baffle on a side facing the evaporation source.
  • the vacuum evaporation apparatus further includes:
  • a film thickness detecting unit connected to the crystal piece and the reference crystal piece, wherein the film thickness detecting unit J is configured to obtain a film thickness according to a difference between a resonant frequency of the crystal piece and a resonant frequency of the reference crystal piece.
  • the evaporation source is a crucible or an evaporation boat.
  • the plurality of substrates includes five substrates.
  • the vacuum evaporation apparatus provided by the present invention is provided with a plurality of substrates, each of which is tangent to a first spherical surface formed by an opening of the evaporation source as a center of the ball, so that the rate of obtaining the organic material per substrate is the same during the evaporation process.
  • the evaporation process of multiple substrates is simultaneously performed by the same evaporation source, thereby improving the utilization ratio of the organic materials; and, the plurality of substrates play a certain shielding effect, and the wall area of the evaporation chamber facing the evaporation source is reduced.
  • the organic material evaporated onto the wall of the vapor deposition chamber is reduced, the waste of the organic material is reduced, and the utilization rate of the organic material is further improved.
  • FIG. 1 is a schematic structural view of a vacuum evaporation apparatus in the prior art
  • FIG. 2 is a schematic structural view of a vacuum evaporation apparatus according to an embodiment of the present invention
  • 3 is a schematic view showing a positional relationship between an evaporation source and a plurality of substrates in the vacuum evaporation apparatus of FIG. 2;
  • FIG. 4 is a schematic structural view of an evaporation source in the vacuum evaporation apparatus of FIG. 2;
  • FIG. 5 is a plan view of the hemispherical mask of FIG. 4;
  • FIG. 6 is a schematic structural view of an evaporation hole on the hemispherical mask of FIG. 5;
  • Figure 7 is a plan view of the vacuum evaporation apparatus of Figure 2.
  • Figure 8 is a schematic view showing the structure of another evaporation source in the vacuum apparatus of Figure 2;
  • Figure 9 is a top plan view of the hemispherical mask of Figure 8. detailed description
  • an embodiment of the present invention provides a vacuum evaporation apparatus including an evaporation chamber 3 and an evaporation source 4 disposed in the vapor deposition chamber 3.
  • the vacuum evaporation apparatus further includes a plurality of substrates 1 disposed in the vapor deposition chamber 3 on the side of the opening of the evaporation source 4.
  • the substrate 1 can be, for example, a glass substrate.
  • the first spherical surface 5 is formed with the opening of the evaporation source 4 as a center of the sphere, and the plurality of substrates 1 are each tangent to the first spherical surface 5.
  • the organic material molecules are continuously emitted to the periphery with the opening of the evaporation source 4 as a center of the sphere, so that each of the approximate spherical surfaces on the first spherical surface 5 obtains the organic material molecules in a unit time.
  • the amount is the same.
  • the direction of the arrow in Figure 2 indicates the molecular flow direction of the organic material.
  • the plurality of substrates 1 are tangent to the first spherical surface 5, so that the vapor deposition effects of the plurality of substrates 1 can be made the same, and after the one-time vapor deposition process is completed, the thickness of the film of the organic material evaporated onto each of the substrates can be made the same. .
  • a plurality of substrates are disposed, and each of the substrates is tangent to a first spherical surface formed by an opening of the evaporation source as a center of the ball, so that the rate of obtaining the organic material per substrate during the evaporation process is obtained.
  • the evaporation process of multiple substrates is simultaneously performed by the same evaporation source, thereby improving the utilization ratio of the organic materials; and, the plurality of substrates play a certain shielding effect, so that the evaporation chamber faces the vapor deposition chamber wall area Reduced, the organic material evaporated onto the wall of the evaporation chamber is reduced, the waste of organic materials is reduced, and the organic is further improved. Material utilization.
  • a hemispherical mask 6 is provided at the opening of the evaporation source 4, and a plurality of evaporation holes 7 are provided in the hemispherical mask 6.
  • Each of the evaporation holes ⁇ on the hemispherical mask 6 is disposed opposite each of the substrates 1.
  • a hemispherical mask 6 is disposed at the opening of the evaporation source 4, and a plurality of evaporation holes 7 are disposed on the hemispherical mask 6, and other portions of the hemispherical mask 6 are closed.
  • the organic material molecules are opened from the hemispherical mask with the evaporation source 4 as the center of the sphere.
  • the plurality of evaporation holes 7 of 6 are respectively emitted to each of the substrates 1, and the effect of making the evaporation source 4 opening as a point evaporation source is better.
  • a shielding portion 701 is disposed at the center of the evaporation hole 7.
  • the shielding portion 701 is surrounded by an opening area of the evaporation hole 7, and the size of the shielding portion 701 is adjustable to change the size of the opening area to realize the evaporation process.
  • the evaporation rate of the evaporation holes 7 is adjusted.
  • the plurality of substrates 1 includes a first substrate 11 and a plurality of second substrates 12 disposed around the first substrate 11; as shown in FIGS. 8 and 9, the hemispherical mask 6
  • the evaporation holes 7 include a first evaporation hole 71 facing the first substrate 11 and a plurality of second evaporation holes 72 disposed around the first evaporation hole 71; the evaporation source 4 is disposed on the rotating device 8, and the rotating device 8 is used for The evaporation source 4 is driven to rotate at a constant speed with the line connecting the first substrate 11 and the first evaporation hole 71 as an axis.
  • the evaporation source 4 evaporates the organic material to the plurality of substrates 1 while the evaporation source 4 rotates at a faster speed, so that the organic material distributed from the plurality of second evaporation holes 72 to the plurality of second substrates 12 is more evenly distributed.
  • the size of the first substrate 1 1 and the second substrate 12 can be made the same by the size adjustment of the first evaporation hole 71; in addition, since the plurality of second evaporation holes 72 are rotated around the first evaporation hole 71, there is no need to correspond
  • Each of the second substrates 12 is provided with a second evaporation hole 72. For example, only two second evaporation holes 72 are provided to satisfy the simultaneous evaporation of the four second substrates 12, so that the arrangement of the evaporation holes is simpler.
  • a plurality of vacuum suction holes 2 are provided in the wall of the vapor deposition chamber 3, and each of the vacuum suction holes 2 corresponds to each of the substrates 1, for example, to the center of each of the substrates 1.
  • the vacuum suction hole 2 is connected to a vacuum pump that is continuously operated outside the vapor deposition chamber 3 to maintain the vacuum state in the evaporation chamber, and the vacuum pump also draws the substrate 1 during the evacuation through the vacuum suction hole 2.
  • the vapor pressure and the concentration of organic vapor molecules change.
  • vacuum evacuation holes 2 are provided at positions corresponding to the respective substrates 1 on the wall of the vapor deposition chamber 3.
  • Each of the substrates is placed in the same vacuum state by the arrangement of the vacuum evacuation holes, and the thickness of the film formed by vapor deposition on the plurality of substrates in the same batch evaporation process is the same.
  • the vacuum evaporation apparatus further includes a vapor deposition chamber 3
  • the crystal oscillator 101 and the reference crystal oscillation piece 102 are provided with a baffle 103 on the side facing the evaporation source 4 with reference to the crystal oscillation piece 102.
  • the vacuum evaporation apparatus further includes a film thickness detecting unit (not shown) connected to the crystal oscillation plate 101 and the reference crystal oscillation piece 102, respectively.
  • the film thickness detecting unit is for obtaining a plating thickness in accordance with a difference between a resonance frequency of the crystal oscillation piece 101 and a resonance frequency of the reference crystal oscillation piece 102.
  • the change in the thickness of the film layer attached to the 'J crystal oscillation piece can be obtained by measuring the change in the resonance frequency of the crystal oscillation piece.
  • the evaporation process changes the environment in which the crystal oscillator is placed. For example, changes in temperature have an effect on the resonant frequency of the crystal oscillator. Therefore, the environmental change makes the thickness of the coating obtained by the detection of the crystal oscillator inaccurate.
  • the baffle 103 is disposed at the reference crystal plate 102. The baffle 103 prevents the organic material from being vapor-deposited onto the reference crystal oscillator 102 during the vacuum evaporation process.
  • the environment in the vapor deposition chamber 3 changes to the crystal oscillator 101 and the reference crystal oscillator 102.
  • the effect of the resonant frequency is the same, and the thickness of the coating is obtained by the difference between the resonant frequencies of the crystal oscillator 101 and the reference crystal oscillator 102, which can reduce the variation of the environment inside the evaporation chamber during the evaporation process to some extent.
  • the effect of the film thickness of the vacuum coating results in a more accurate thickness of the coating.
  • the above evaporation source may be a crucible or an evaporation boat.
  • the plurality of substrates may include five substrates.
  • the space of the vapor deposition chamber of the vacuum evaporation device and the size of the substrate have certain specifications, so that the vacuum evaporation device is placed in five pieces.
  • the best effect can be achieved with the substrate, and the plurality of substrates are not limited to five.
  • a plurality of substrates are disposed, and each of the substrates is tangent to a first spherical surface formed by an opening of the evaporation source as a center of the ball, so that the rate of obtaining the organic material per substrate during the evaporation process is obtained.
  • the evaporation process of multiple substrates is simultaneously performed by the same evaporation source, thereby improving the utilization ratio of the organic materials; and, the plurality of substrates play a certain shielding effect, so that the evaporation chamber faces the vapor deposition chamber wall area
  • the organic material evaporated onto the wall of the vapor deposition chamber is reduced, the waste of the organic material is reduced, and the utilization rate of the organic material is further improved.
  • the arrangement of the plurality of evaporation holes on the hemispherical mask and the hemispherical mask is provided in the evaporation source opening, so that during the evaporation process, the organic material molecules are emitted from the plurality of evaporation holes of the hemispherical mask to each of the substrates with the evaporation source opening as the center of the sphere.
  • the effect of the evaporation source opening as a point evaporation source is better.
  • Each of the substrates is placed in the same vacuum state by the arrangement of the vacuum vent holes, and the thickness of the film formed by vapor deposition on the plurality of substrates in the same batch of vapor deposition is the same.
  • the evaporation can be reduced to some extent by the arrangement of the crystal oscillator and the reference crystal oscillator
  • the influence of the change in the environment inside the vapor deposition chamber on the measurement of the film thickness of the vacuum coating film results in a more accurate coating thickness.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开了一种真空蒸镀设备，涉及真空蒸镀技术领域，能够提高真空蒸镀过程中的有机材料的利用率。所述真空蒸镀设备包括蒸镀腔和设置于所述蒸镀腔中的蒸发源，还包括：设置于所述蒸镀腔中的多块基板，所述多块基板位于所述蒸发源开口的一侧；所述蒸发源开口作为球心形成第一球面，每块所述多块基板均与所述第一球面相切。

Description

真空蒸镀设备 技术领域
本发明涉及真空蒸镀技术领域， 尤其涉及一种真空蒸镀设备。 背景技术
将待成膜的物质置于真空中进行蒸发或升华， 并将其镀到基板上 的工艺称为真空蒸镀或真空镀膜。 真空镀膜工艺大量应用于设备的制 造过程中， 例如， 有机电致发光二极管 （ Organic Light-Emitting Diode, 简称 OLED )显示器件的空穴注入层、 空穴传输层、 发光层、 电子传输 层等都采用真空蒸镀工艺成膜。 如图 1 所示， 真空蒸镀设备包括蒸镀 腔 3 , 蒸镀腔 3中设置有蒸发源 4和基板 1 , 基板 1位于蒸发源 4的正 上方， 蒸镀腔 3的壁上设置有真空抽气孔 2 , 真空抽气孔 2连接于蒸镀 腔 3外部的真空泵（未示出）。 在真空蒸镀过程中， 蒸发源 4向基板 1 蒸发气化的有机材料分子， 真空泵持续抽真空来维持蒸镀腔 3 里面的 真空环境， 使气化的有机材料分子飞向基板 1 上成膜， 图中箭头方向 表示有机材料分子的流动方向。 然而， 在有机材料被蒸镀在基板 1 上 的同时， 大量有机材料被蒸镀在蒸镀腔 3 的壁上， 使得大量有机材料 被浪费， 导致有机材料的利用率很低。 发明内容
本发明的实施例提供一种真空蒸镀设备， 其能够提高真空蒸镀过 程中有机材料的利用率。
为解决上述技术问题， 本发明的实施例采用如下技术方案： 提供一种真空蒸镀设备， 包括：
蒸镀腔和设置于所述蒸镀腔中的蒸发源， 还包括： 设置于所述蒸 镀腔中的多块基板， 所述多块基板位于所述蒸发源开口的一侧；
所述蒸发源开口作为球心形成第一球面， 每块所述多块基板均与 所述第一球面相切。
具体地， 所述蒸发源开口处设置有半球面罩， 所述半球面罩上设 置有多个蒸发孔。
具体地， 所述半球面罩上的每个所述蒸发孔分别与每块所述多块 基板正对设置。
进一步地， 所述多块基板包括第一基板和围绕于所述第一基板设 置的多块第二基板；
所述半球面罩上的所述多个蒸发孔包括正对所述第一基板的第一 蒸发孔和围绕于所述第一蒸发孔设置的多个第二蒸发孔；
所述蒸发源设置于旋转装置上， 所述旋转装置用于带动所述蒸发 源以所述第一基板和所述第一蒸发孔的连线为轴勾速转动。
具体地， 所述蒸镀腔壁上设置有多个真空抽气孔， 每个所述真空 抽气孔分别对应于每块所述多块基板。
具体地， 所述真空蒸镀设备还包括： 设置于所述蒸镀腔中的晶振 片和参照晶振片；
所述参照晶振片在面向所述蒸发源一侧设置有挡板。
具体地， 所述的真空蒸镀设备还包括：
连接于所述晶振片和参照晶振片的膜厚检测单元， 所述膜厚检 'J 单元用于根据所述晶振片谐振频率与所述参照晶振片谐振频率的差值 获得镀膜厚度。
进一步地， 所述蒸发源为坩埚或蒸发舟。
具体地， 所述多块基板包括五块基板。
本发明提供的真空蒸镀设备， 设置多块基板且每块基板相切于以 蒸发源的开口为球心形成的第一球面， 使得在蒸镀过程中每块基板获 得有机材料的速率相同， 实现通过同一个蒸发源同时对多块基板进行 蒸镀工艺， 从而提高了有机材料的利用率； 并且， 多块基板起到一定 的遮挡作用， 使蒸发源正对的蒸镀腔壁面积减少， 被蒸镀到蒸镀腔壁 上的有机材料减少， 减少了有机材料的浪费， 进一步提高了有机材料 的利用率。 附图说明 将对实施例或现有技术描述中所需要使用的附图作简单地介绍。 显而 易见地， 下面描述中的附图仅仅是本发明的一些实施例。
图 1为现有技术中一种真空蒸镀设备的结构示意图；
图 2为本发明实施例中一种真空蒸镀设备的结构示意图； 图 3 为图 2的真空蒸镀设备中的蒸发源与多块基板的位置关系示 意图；
图 4为图 2的真空蒸镀设备中的一种蒸发源的结构示意图； 图 5为图 4中的半球面罩的俯视图；
图 6为图 5的半球面罩上蒸发孔的结构示意图；
图 7为图 2的真空蒸镀设备的俯视图；
图 8为图 2的真空设备中的另一种蒸发源的结构示意图；
图 9为图 8中的半球面罩的俯视图。 具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方 案进行清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部 分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普 通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
如图 2 所示， 本发明实施例提供一种真空蒸镀设备， 其包括蒸镀 腔 3和设置于蒸镀腔 3中的蒸发源 4。该真空蒸镀设备还包括设置于蒸 镀腔 3中的多块基板 1 , 其位于蒸发源 4开口的一侧。 基板 1例如可以 为玻璃基板。 如图 3所示 （仅显示出部分基板） , 以蒸发源 4的开口 为球心形成第一球面 5 , 多块基板 1均与第一球面 5相切。 在真空蒸镀 过程中， 有机材料分子以蒸发源 4 的开口为球心不断地向四周散发， 因此第一球面 5 上每个近似于平面的微分面在单位时间内所获得的有 机材料分子的量是相同的。 图 2 中箭头方向表示有机材料分子流动方 向。多块基板 1相切于第一球面 5 ,可以使多块基板 1的蒸镀效果相同， 在一次蒸镀过程完成后， 能够使被蒸镀到每块基板上的有机材料的膜 的厚度相同。
本发明实施例中的真空蒸镀设备， 设置多块基板且每块基板相切 于以蒸发源的开口为球心形成的第一球面， 使得在蒸镀过程中每块基 板获得有机材料的速率相同， 实现通过同一个蒸发源同时对多块基板 进行蒸镀工艺， 从而提高了有机材料的利用率； 并且， 多块基板起到 一定的遮挡作用， 使蒸发源正对的蒸镀腔壁面积减少， 被蒸镀到蒸镀 腔壁上的有机材料减少， 减少了有机材料的浪费， 进一步提高了有机 材料的利用率。
具体地， 如图 4、 图 5所示， 蒸发源 4开口处设置有半球面罩 6 , 半球面罩 6上设置有多个蒸发孔 7。半球面罩 6上的每个蒸发孔 Ί分别 与每块基板 1正对设置。 在蒸发源 4开口处设置半球面罩 6 , 在半球面 罩 6上设置多个蒸发孔 7 , 半球面罩 6其它部分封闭， 在蒸镀过程中， 有机材料分子以蒸发源 4开口为球心从半球面罩 6的多个蒸发孔 7处 分别向每块基板 1散发， 能够使蒸发源 4开口作为点蒸发源时的效果 更好。 如图 6所示， 蒸发孔 7的中心处设置有遮挡部 701 , 遮挡部 701 周围为蒸发孔 7的开口区， 遮挡部 701 的大小可调， 以改变开口区的 大小， 实现在蒸镀过程中对蒸发孔 7的蒸发速率进行调节。
可选地， 如图 7所示， 多块基板 1 包括第一基板 11和围绕于第一 基板 11设置的多块第二基板 12; 如图 8和图 9所示， 半球面罩 6上的 多个蒸发孔 7包括正对第一基板 11 的第一蒸发孔 71和围绕于第一蒸 发孔 71设置的多个第二蒸发孔 72; 蒸发源 4设置于旋转装置 8上， 旋 转装置 8用于带动蒸发源 4以第一基板 1 1和第一蒸发孔 71 的连线为 轴匀速转动。 在蒸镀过程中， 蒸发源 4向多块基板 1 蒸发有机材料的 同时蒸发源 4勾速转动， 使得从多个第二蒸发孔 72散发至多块第二基 板 12的有机材料分布更加均勾， 通过第一蒸发孔 71 的大小调整也可 以使第一基板 1 1 与第二基板 12获得有机材料的速率相同； 另外由于 多个第二蒸发孔 72会围绕第一蒸发孔 71旋转， 因此无需对应每个第 二基板 12都分别设置第二蒸发孔 72 , 例如只设置两个第二蒸发孔 72 即可满足同时对四个第二基板 12进行蒸镀，使蒸发孔的设置更加简单。
具体地， 如图 2所示， 蒸镀腔 3壁上设置有多个真空抽气孔 2 , 每 个真空抽气孔 2分别对应于每块基板 1 , 例如正对每个基板 1的中心。 在真空蒸镀过程中， 真空抽气孔 2连接蒸镀腔 3外部持续工作的真空 泵以维持蒸镀腔中的真空状态， 在真空泵通过真空抽气孔 2 抽气的过 程中也会使基板 1 处的蒸汽压和有机蒸汽分子的浓度发生变化。 为了 使各个基板 1 处于相同的蒸汽压以及使各个基板 1 处的有机蒸汽分子 浓度相同， 在蒸镀腔 3 的壁上与各个基板 1对应的位置处都设置真空 抽气孔 2。 通过真空抽气孔的设置使各个基板处于相同的真空状态， 使 同一批次蒸镀过程中的多块基板上蒸镀成膜的膜层厚度相同。
进一步地， 如图 2所示， 上述真空蒸镀设备还包括设置于蒸镀腔 3 中的晶振片 101和参照晶振片 102 ,参照晶振片 102在面向蒸发源 4一 侧设置有挡板 103。上述真空蒸镀设备还包括分别连接于晶振片 101和 参照晶振片 102 的膜厚检测单元 （图中未示出） 。 膜厚检测单元用于 根据晶振片 101 的谐振频率与参照晶振片 102的谐振频率之间的差值 获得镀膜厚度。 晶振片附着膜层的厚度与晶振片的谐振频率具有对应 关系， 因此通过测量晶振片的谐振频率的变化可以得 'J晶振片上所附 着膜层的厚度的变化。 但是， 蒸镀过程会使晶振片所处环境发生变化。 例如温度的变化对晶振片的谐振频率会有一定影响。 因此， 环境变化 使得通过晶振片检测得到的镀膜厚度并不准确。 参照晶振片 102 处设 有挡板 103 ,挡板 103使真空蒸镀过程中有机材料不能被蒸镀到参照晶 振片 102上， 蒸镀腔 3 内环境的变化对晶振片 101 和参照晶振片 102 的谐振频率的影响是相同的， 通过晶振片 101 和参照晶振片 102的谐 振频率之间的差值获得镀膜厚度， 这可以在一定程度上减少蒸镀过程 中蒸镀腔内环境的变化对测量真空镀膜的膜厚所带来的影响， 得到更 为准确的镀膜的厚度。
进一步地， 上述蒸发源可以为坩埚或蒸发舟。
具体地， 上述多块基板可以包括五块基板， 在 OLED显示器件制 造过程中， 真空蒸镀设备蒸镀腔的空间和基板的大小都具有一定的规 格， 从而使真空蒸镀设备在放置五块基板时可以达到最好的效果， 多 块基板不限于五块。
本发明实施例中的真空蒸镀设备， 设置多块基板且每块基板相切 于以蒸发源的开口为球心形成的第一球面， 使得在蒸镀过程中每块基 板获得有机材料的速率相同， 实现通过同一个蒸发源同时对多块基板 进行蒸镀工艺， 从而提高了有机材料的利用率； 并且， 多块基板起到 一定的遮挡作用， 使蒸发源正对的蒸镀腔壁面积减少， 被蒸镀到蒸镀 腔壁上的有机材料减少， 减少了有机材料的浪费， 进一步提高了有机 材料的利用率。 通过蒸发源开口处设置半球面罩及半球面罩上多个蒸 发孔的设置使在蒸镀过程中， 有机材料分子以蒸发源开口为球心从半 球面罩的多个蒸发孔处分别向每块基板散发， 能够使蒸发源开口作为 点蒸发源时的效果更好。 通过真空通气孔的设置使各个基板处于相同 真空状态， 使同一批次蒸镀过程中的多块基板上蒸镀成膜的膜层厚度 相同。 通过晶振片和参照晶振片的设置可以在一定程度上减少蒸镀过 程中蒸镀腔内环境的变化对测量真空镀膜的膜厚所带来的影响， 得到 更为准确的镀膜的厚度。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并 围^ , 可轻易想到变化或替换， ^应涵盖在本发明的保护范围之内。 因此， 本发明的保护范围应以所述权利要求的保护范围为准。

Claims

权 利 要 求
1、 一种真空蒸镀设备， 包括蒸镀腔和设置于所述蒸镀腔中的蒸发 源， 并且包括：
设置于所述蒸镀腔中的多块基板， 所述多块基板位于所述蒸发源 开口的一侧，
其中所述蒸发源开口作为球心形成第一球面， 每块所述多块基板 均与所述第一球面相切。
2、 根据权利要求 1所述的真空蒸镀设备， 其中所述蒸发源开口处 设置有半球面罩， 所述半球面罩上设置有多个蒸发孔。
3、 根据权利要求 2所述的真空蒸镀设备， 其中所述半球面罩上的 每个所述多个蒸发孔分别与每块所述多块基板正对设置。
4、 根据权利要求 2所述的真空蒸镀设备， 其中所述多块基板包括 第一基板和围绕于所述第一基板设置的多块第二基板；
所述半球面罩上的所述多个蒸发孔包括正对所述第一基板的第一 蒸发孔和围绕于所述第一蒸发孔设置的多个第二蒸发孔；
所述蒸发源设置于旋转装置上， 所述旋转装置用于带动所述蒸发 源以所述第一基板和所述第一蒸发孔的连线为轴勾速转动。
5、 根据权利要求 1所述的真空蒸镀设备， 其中所述蒸镀腔壁上设 置有多个真空抽气孔， 每个所述真空抽气孔分别对应于每块所述多块 基板。
6、根据权利要求 1至 5中任意一项所述的真空蒸镀设备，还包括： 设置于所述蒸镀腔中的晶振片和参照晶振片；
所述参照晶振片在面向所述蒸发源一侧设置有挡板。
7、 根据权利要求 6所述的真空蒸镀设备， 还包括：
连接于所述晶振片和参照晶振片的膜厚检测单元， 所述膜厚检 'J 单元用于根据所述晶振片谐振频率与所述参照晶振片谐振频率的差值 获得镀膜厚度。
8、 根据权利要求 1至 5中任意一项所述的真空蒸镀设备， 其中所 述蒸发源为坩埚或蒸发舟。
9、 根据权利要求 1至 5中任意一项所述的真空蒸镀设备， 其中所 述多块基板包括五块基板。
10、 根据权利要求 2-4中任意一项所述的真空蒸镀设备， 其中所述 蒸发孔在中心处设有大小可调节的遮挡部。
PCT/CN2014/082054 2014-04-17 2014-07-11 真空蒸镀设备 WO2015158048A1 (zh)

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CN107686969A (zh) * 2017-08-22 2018-02-13 武汉华星光电半导体显示技术有限公司 一种蒸发源装置
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CN108977772A (zh) * 2018-07-24 2018-12-11 深圳市华星光电技术有限公司 一种蒸镀装置及其蒸镀腔体
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CN112359322A (zh) * 2020-09-25 2021-02-12 扬州吉山津田光电科技有限公司 一种真空蒸镀方法
CN112697081B (zh) * 2020-12-15 2022-10-21 江苏集萃有机光电技术研究所有限公司 一种膜厚测量系统及方法

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