WO2016155150A1 - 一种溅射装置 - Google Patents

一种溅射装置 Download PDF

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Publication number
WO2016155150A1
WO2016155150A1 PCT/CN2015/084309 CN2015084309W WO2016155150A1 WO 2016155150 A1 WO2016155150 A1 WO 2016155150A1 CN 2015084309 W CN2015084309 W CN 2015084309W WO 2016155150 A1 WO2016155150 A1 WO 2016155150A1
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Prior art keywords
sputtering apparatus
targets
target
adjacent
distance
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PCT/CN2015/084309
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English (en)
French (fr)
Inventor
袁广才
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京东方科技集团股份有限公司
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Priority to US15/105,090 priority Critical patent/US10392695B2/en
Publication of WO2016155150A1 publication Critical patent/WO2016155150A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Definitions

  • the present invention relates to the field of vacuum coating technology, and more particularly to a sputtering apparatus.
  • Sputter coating technology is widely used in flat panel display, semiconductor and solar fields due to its advantages of simple processing, convenient operation, compact coating film and high bonding strength.
  • the sputtering coating technology uses a sputtering device for coating.
  • the sputtering device includes a vacuum chamber.
  • the vacuum chamber is provided with a substrate back plate and a target.
  • the working principle is to pass a certain process gas into the vacuum chamber in the vacuum chamber.
  • An electric field is formed to ionize the process gas into a plasma, and the plasma bombards the rotatable target under the action of the electric field, so that the particles on the surface of the target are sputtered out and adhered to the surface of the backing plate to complete the coating.
  • the applicant of the present invention has found that in the prior art, in order to ensure uniform thickness of the film produced by the sputtering apparatus, a large rotation angle is set for each rotatable target, but particles sputtered by the same target. The distances to different locations on the backing plate of the substrate are different, and the difference is large, so that the content of the process gas in different positions of the film formed by the sputtered particles is different, and therefore, the characteristics of different positions of the obtained film are different. As a result, the performance of the device containing the film deteriorates or even fails, which lowers the yield of the device prepared by the sputtering device.
  • the present invention provides the following technical solutions:
  • a sputtering apparatus comprising a vacuum chamber having a substrate backing plate and a plurality of rotatable targets opposite the substrate backing plate, any two adjacent targets The distance between them is 160mm to 220mm.
  • the target is a hollow target, and a rotating magnetic pole for rotating the target is disposed in a middle portion of each of the targets, and the rotating magnetic pole can rotate left and right with respect to the substrate back plate by an angle of 30°. 80°.
  • the vacuum chamber is provided with thirteen targets, wherein the distance between any two adjacent targets is 208 mm ⁇ 10 mm; the rotating magnetic pole can be rotated left and right with respect to the substrate back plate.
  • the angle is 50° to 80°.
  • the vacuum chamber is provided with fourteen targets, wherein a distance between any two adjacent targets is 192 mm ⁇ 10 mm; the rotating magnetic pole can be rotated left and right with respect to the substrate back plate.
  • the angle is 40° to 70°.
  • the vacuum chamber is provided with fifteen targets, wherein the distance between any two adjacent targets is 178 mm ⁇ 10 mm; the rotating magnetic pole can rotate left and right with respect to the substrate back plate The angle is 30° to 60°.
  • an angle at which a rotating magnetic pole in the target opposite to an edge region of the substrate backing plate is rotatable relative to the substrate backing plate is smaller than a rotation in the other of the targets in the vacuum chamber The angle at which the magnetic poles are rotatable relative to the substrate backing plate.
  • each of the air hole groups includes a plurality of air holes.
  • the horizontal distances of the groups of the vents respectively located at the starting end of the adjacent two rows of the vent groups to the tip of the target are different.
  • the air hole group includes a first air hole group or a second air hole group
  • the first air hole group includes four air holes
  • the four air holes are arranged in a diamond shape, respectively located on the upper, lower, left and right sides of the diamond shape.
  • the second air hole group includes two air holes, and the two air holes are arranged in a diamond shape, respectively located at the left and right corners of the diamond.
  • the groups of the air holes at the starting end of the adjacent two rows of the air hole groups are the first air hole group and the second air hole group, respectively.
  • the horizontal distance of the first group of holes at the starting end to the tip of the target is 26 mm ⁇ 5 mm, and the horizontal distance of the second group of holes at the starting end to the tip of the target is 20mm ⁇ 5mm.
  • the distance between the adjacent two rows of the groups of the holes is the same as the distance between the two adjacent targets.
  • the projections of the adjacent two rows of vent groups on the same target are spaced apart from each other.
  • the distance between two adjacent groups of the air holes in the same column is 442 mm ⁇ 5 mm.
  • the sputtering apparatus provided by the present invention comprises a vacuum chamber provided with a substrate backing plate and a plurality of rotatable targets, wherein the sputtering apparatus in the embodiment of the invention is reduced compared with the prior art.
  • the distance between any two adjacent targets, the distance between any two adjacent targets is 160mm ⁇ 220mm, the distance between two adjacent targets is reduced, and the rotation angle of each target is also As the distance between the targets decreases, the thickness of the film produced by the sputtering device is uniform, and the particles sputtered by the same target are reduced to reach different positions on the backing plate of the substrate.
  • the difference between the distances makes the process gas content in different positions of the film formed by the sputtered particles tend to be the same, so that the characteristics of the different positions of the obtained film tend to be the same, and the performance of the device containing the film is prevented from occurring. Deterioration or failure, thereby increasing the yield of the device fabricated by the sputtering apparatus.
  • FIG. 1 is a plan view 1 of an internal structure of a sputtering apparatus according to an embodiment of the present invention
  • FIG. 2 is a plan view 2 of the internal structure of a sputtering apparatus according to an embodiment of the present invention
  • 2a is a graph showing the relationship between the content of a process gas in a film produced in the prior art and the position in the film;
  • 2b, 2c, and 2d are diagrams showing the relationship between the content of the process gas and the position in the film in the film obtained in the embodiment of the present invention.
  • FIG. 3 is a schematic structural view showing a distribution of a ventilating group in a sputtering apparatus according to an embodiment of the present invention
  • FIG. 4 is a schematic structural view of a first air hole group and a second air hole group according to an embodiment of the present invention
  • FIG. 5 is a schematic structural view showing a distribution of pores in a sputtering apparatus according to an embodiment of the present invention.
  • a sputtering apparatus 10 includes a vacuum chamber having a substrate back plate 11 and a plurality of rotatable targets 12 opposite to the substrate back plate 11 , wherein The distance D between any two adjacent targets 12 is 160 mm to 220 mm, wherein the distance D between any two adjacent targets 12 can be adjusted according to the space of the vacuum chamber in the sputtering device, but It should be noted that the distance between different adjacent targets in the same sputtering device may be different, but the difference between the distances between different adjacent targets should be within a preset threshold range, preferably, The threshold can be set to ⁇ 10mm.
  • the sputtering device 10 includes, but is not limited to, a physical vapor deposition device (hereinafter referred to as a PVD device).
  • a PVD device The following is an example of a PVD device (hereinafter referred to as a G8.5 PVD device) of the model G8.5.
  • a G8.5 PVD device The following is an example of a PVD device (hereinafter referred to as a G8.5 PVD device) of the model G8.5.
  • G8.5 PVD device a physical vapor deposition device of the model G8.5.
  • the root target 12, the distance between two adjacent targets 12 is 208 mm ⁇ 10 mm; or, in the G8.5 PVD device, there are fourteen targets 12, and the distance between two adjacent targets 12 is 192 mm ⁇ 10 mm; or, there are fifteen targets 12 in the G8.5 PVD device, and the distance between two adjacent targets 12 is 178 mm ⁇ 10 mm.
  • the sputtering apparatus 10 provided by the embodiment of the present invention includes a vacuum chamber provided with a substrate backing plate 11 and a plurality of rotatable targets 12, wherein the sputtering in the embodiment of the present invention is compared with the prior art.
  • the radiation device 10 reduces the distance between any two adjacent targets 12, between any two adjacent targets 12 The distance is between 160mm and 220mm, and the distance between two adjacent targets 12 is reduced, and the rotation angle of each target 12 is also reduced as the distance between the targets is reduced, which is ensured when preparing the film.
  • the difference between the distances that the particles sputtered by the same target 12 reach different positions on the substrate backing plate 11 is reduced, so that the particles are sputtered.
  • the process gas content in the different positions of the formed film tends to be the same, so that the characteristics of the different positions of the obtained film tend to be the same, and the performance of the device containing the film is deteriorated or failed, thereby improving the device for preparing the sputtering apparatus 10. Yield.
  • the target 12 is a hollow target, and a rotating magnetic pole for rotating the target 12 is disposed in a middle portion of each of the targets 12, and an angle ⁇ at which the rotating magnetic pole can rotate left and right with respect to the substrate backing plate 11 is 30°. ⁇ 80°, wherein the angle ⁇ at which the rotating magnetic pole is rotatable relative to the substrate backing plate 11 is the angle at which the target 12 on which the rotating magnetic pole is located is rotatable.
  • the process gas content in different positions of the film formed by the sputtered particles can be further ensured.
  • the prior art and the present invention will be compared below:
  • FIG. 2a is a process gas in the film prepared in the prior art.
  • the fold line in Fig. 2a fluctuates greatly, and the unit content of the process gas at different positions in the film differs by a maximum of 30, which is known.
  • the process gas content in the film produced in the prior art is not uniform.
  • the G8.5 PVD device is provided with thirteen targets 12, and the distance between two adjacent targets is 208 mm ⁇ 10 mm, and the rotating magnetic pole of each target 12 is opposite to the substrate back plate.
  • the angle ⁇ of the left and right rotations is 50° to 80°.
  • FIG. 2b is a diagram showing the relationship between the content of the process gas and the position of the film in the film prepared in the embodiment of the present invention, and the horizontal axis and the vertical axis. The meaning is the same as that of FIG. 2a.
  • the fold line in FIG. 2b is less undulating, and the unit content of the process gas at different positions in the film is different by 20, which is known to be compared with the prior art. be made of
  • the uniformity of the process gas content in the film has been improved and tends to be the same.
  • the G8.5 PVD device is provided with fourteen targets 12, and the distance between two adjacent targets 12 is 192 mm ⁇ 10 mm, and the rotating magnetic poles of each of the targets 12 are opposite to each other.
  • the angle ⁇ of the substrate back plate 11 can be rotated from left to right by 40° to 70°.
  • FIG. 2c is a diagram showing the relationship between the content of the process gas and the film position in the film prepared in the embodiment of the present invention, and the horizontal axis.
  • the meaning of the vertical axis is the same as that of Fig. 2a. Compared with Fig. 2a, the fold line in Fig.
  • FIG. 2d is a diagram showing the relationship between the content of the process gas and the film position in the film prepared in the embodiment of the present invention, and the horizontal axis. The meaning of the vertical axis is the same as that of Fig. 2a. Compared with Fig. 2a, the fold line in Fig.
  • the angle of rotation of the rotating magnetic pole in the target 12 opposite to the edge region of the substrate backing plate 11 relative to the substrate backing plate 11 is smaller than that in the vacuum chamber.
  • the angle of the rotating magnetic poles in the other targets 12 relative to the substrate backing plate 11 can be rotated left and right; for example, referring to FIG. 2, the target A and the target C are targets opposite to the edge regions of the substrate backing plate 11.
  • the angle at which the rotating magnetic pole of the target A and the target C can rotate to the left and right relative to the substrate back plate is ⁇ 1
  • the angle of the rotating magnetic pole of the target B relative to the substrate backing plate 11 is ⁇ 2, wherein ⁇ 2 > ⁇ 1.
  • a plurality of air hole groups for injecting a process gas into the vacuum chamber are arranged between any two adjacent targets 12, for example, as shown in FIG.
  • each of the air hole groups includes a plurality of air holes 15; adjacent two rows of air holes The distance between the group of pores at the starting end in the group to the tip of the target 12 is different.
  • the distance from the group of the pores at the beginning of the first group of pores to the tip of the target 12 is R2
  • the distance between the group of pores at the beginning of the two rows of pore groups to the tip of the target 2 is R3, R2 ⁇ R3, so that a group of pores corresponding to the edge of the substrate backing plate 11 is disposed so that the venting is injected into the vacuum chamber through the group of pores.
  • the process gas distribution at the edge of the bottom backing plate 11 is more uniform.
  • the air hole group includes the first air hole group 13 or the second air hole group 14.
  • the first air hole group 13 includes four air holes 15 and the four air holes 15 have a diamond shape.
  • the cloths are respectively located at the upper, lower, left and right corners of the diamond shape;
  • the second air hole group 14 includes two air holes 15 which are arranged in a diamond shape, respectively located at the left and right corners of the diamond shape;
  • the distribution of the pores 15 in the pore group is set such that the distribution of the process gas in the vacuum chamber is more uniform, so that the distribution of the process gas contained in the obtained film is more uniform, and the device for preparing the sputtering apparatus 10 is further improved. rate.
  • the group of the air holes at the starting end of the adjacent two rows of the air hole groups are the first air hole group 13 and the second air hole group 14, respectively, as shown in FIG. 3, for example, Eight targets 12 are disposed in the vacuum chamber of the sputtering apparatus 10, and the group of pores at the beginning of the first row of pore groups between the first target 12 and the second target 12 is the first group of pores 13
  • the group of pores at the beginning of the second row of pore groups between the second target 12 and the third target 12 is the second group of pores 14.
  • the projections of the adjacent two rows of vent groups on the same target 12 are spaced apart from each other, as shown in FIG. 3, the first vent in the first row of vent groups.
  • the first and second groups of stomata in the group and the second group of stomata are not on the same horizontal line, the projection of the first group of stomata in the horizontal direction onto the second target and the second group of stomata in the horizontal direction.
  • the distance between two adjacent air hole groups in the same column is 442 mm ⁇ 5 mm, for example, as shown in FIG.
  • the distance between the first group of the first group of pores and the second group of holes is 442 mm ⁇ 5 mm.
  • the embodiment of the present invention can also utilize the air holes 15 arranged in the prior art, but only a part of the air holes 15 are used to inject a process gas into the vacuum chamber.
  • the adjacent two rows of air holes 15 are The projections of the pores 15 for injecting the process gas into the vacuum chamber are spaced apart from each other; for example, as shown in FIG. 5, the solid circle and the hollow circle are both pores 15, and the solid circle indicates the vacuum chamber.
  • the pores 15 of the process gas are injected, and the open circles indicate the pores 15 which do not inject the process gas into the vacuum chamber.
  • the above manner can improve the uniformity of the process gas in the vacuum chamber without changing the distribution of the pores 15 in the prior art.
  • only a part of the air holes 15 may be used to inject a process gas into the vacuum chamber as needed, and preferably, in the adjacent two rows of air holes 15, a process gas is injected into the vacuum chamber.
  • the projections of the air holes 15 on any one of the targets are spaced apart from each other; for example, as shown in FIG. 5, the solid circles and the hollow circles are both air holes 15, and the solid circles represent the air holes 15 for injecting the process gas into the vacuum chamber, and the hollow circles are An air hole 15 indicating that no process gas is injected into the vacuum chamber.
  • the above manner can further enhance the uniformity of the process gas in the vacuum chamber under the condition that the pores 15 of the sputtering apparatus of the embodiment of the present invention are distributed.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种溅射装置(10)，包括真空腔，真空腔中设有衬底背板(11)，以及与衬底背板(11)相对的多根可旋转的靶材(12)，任意相邻的两根靶材(12)之间的距离(D)为160mm～220mm。

Description

一种溅射装置 技术领域
本发明涉及真空镀膜技术领域，尤其涉及一种溅射装置。
背景技术
溅射镀膜技术因其具有加工简单、操作方便、镀膜薄膜致密、结合强度高等优点被广泛应用于平板显示领域、半导体领域以及太阳能领域等等。溅射镀膜技术使用溅射装置进行镀膜，溅射装置包括真空腔，真空腔中设有衬底背板和靶材，其工作原理为在真空腔中通入一定的工艺气体，在真空腔内形成电场，将工艺气体电离成等离子体，等离子体在电场的作用下轰击可旋转的靶材，使得靶材表面的粒子溅射出去，附着在沉底背板的表面，从而完成镀膜。
但是，本发明申请人发现，现有技术中为了保证溅射装置制得的薄膜的厚度均一，为每根可旋转的靶材设置了较大的旋转角度，但由于同一靶材溅射出的粒子到达衬底背板上不同位置所经过的距离不同，且差距较大，使得利用溅射出的粒子形成的薄膜的不同位置中的工艺气体含量不同，因此，制得的薄膜的不同位置的特性不同，从而导致含有该薄膜的器件性能发生变质，甚至失效，降低了溅射装置制备器件的良率。
发明内容
本发明的目的在于提供一种溅射装置，用于提高溅射装置制备器件的良率。
为了实现上述目的，本发明提供如下技术方案：
一种溅射装置，包括真空腔，所述真空腔中设有衬底背板，以及与所述衬底背板相对的多根可旋转的靶材，任意相邻的两根所述靶材之间的距离为160mm～220mm。
进一步地，所述靶材为空心靶材，在每根所述靶材中部设置有可使靶材旋转的旋转磁极，所述旋转磁极相对于衬底背板可左右旋转的角度为30°～80°。
进一步地，所述真空腔中设有十三根靶材，其中，任意相邻的两根所述靶材之间的距离为208mm±10mm；所述旋转磁极相对于衬底背板可左右旋转的角度为50°～80°。
进一步地，所述真空腔中设有十四根靶材，其中，任意相邻的两根所述靶材之间的距离为192mm±10mm；所述旋转磁极相对于衬底背板可左右旋转的角度为40°～70°。
进一步地，所述真空腔中设有十五根靶材，其中，任意相邻的两根所述靶材之间的距离为178mm±10mm；所述旋转磁极相对于衬底背板可左右旋转的角度为30°～60°。
进一步地，与所述衬底背板的边缘区域相对的所述靶材中的旋转磁极相对于衬底背板可左右旋转的角度，小于所述真空腔中的其他所述靶材中的旋转磁极相对于衬底背板可左右旋转的角度。
进一步地，任意相邻的两根所述靶材之间设有呈竖列状排列的多个用于向所述真空腔内注入工艺气体的气孔组，每个所述气孔组包括多个气孔；相邻的两列所述气孔组中分别位于起始端的所述气孔组到所述靶材的顶端的水平距离不同。
进一步地，所述气孔组包括第一气孔组或第二气孔组，所述第一气孔组包括四个气孔，所述四个气孔呈菱形排布，分别位于菱形的上、下、左、右四个角上；所述第二气孔组包括两个气孔，所述两个气孔呈菱形排布，分别位于菱形的左、右两个角上。
进一步地，相邻的两列所述气孔组中位于起始端的所述气孔组分别为所述第一气孔组和所述第二气孔组。
优选的，位于起始端的所述第一气孔组到所述靶材的顶端的水平距离为26mm±5mm，位于起始端的所述第二气孔组到所述靶材的顶端的水平距离为 20mm±5mm。
进一步地，相邻的两列所述气孔组之间的距离与相邻的两根所述靶材之间的距离相同。
进一步地，相邻的两列气孔组在同一根所述靶材上的投影是相互间隔的。
优选的，同一列中相邻的两个所述气孔组之间的距离为442mm±5mm。
本发明提供的溅射装置，包括真空腔，真空腔中设有衬底背板和多根可旋转的靶材，其中，与现有技术相比，本发明实施例中的溅射装置减小了任意相邻两根靶材之间的距离，任意相邻两根靶材之间的距离为160mm～220mm，相邻两根靶材之间的距离减小，每根靶材的旋转角度也随着靶材之间的距离减小而减小，在保证溅射装置制得的薄膜的厚度均一的前提下，减小了同一靶材溅射出的粒子到达衬底背板上不同位置所经过的距离之间的差距，使得利用溅射出的粒子形成的薄膜的不同位置中的工艺气体含量趋于相同，因此制得的薄膜的不同位置的特性趋于相同，避免含有该薄膜的器件性能发生变质或失效，进而提高溅射装置制备器件的良率。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本发明实施例提供的溅射装置内部结构的俯视图一；
图2为本发明实施例提供的溅射装置内部结构的俯视图二；
图2a为现有技术中制得的薄膜中的工艺气体的含量与薄膜中位置的关系图；
图2b、图2c、图2d为本发明实施例中制得的薄膜中的工艺气体的含量与薄膜中位置的关系图；
图3为本发明实施例提供的溅射装置内气孔组分布的结构示意图；
图4为本发明实施例中第一气孔组和第二气孔组的结构示意图；
图5为本发明实施例中提供的溅射装置内气孔分布的结构示意图。
附图标记：
10-溅射装置，               11-衬底背板，
12-靶材，                   13-第一气孔组，
14-第二气孔组，             15-气孔。
具体实施方式
为了进一步说明本发明实施例提供的溅射装置，下面结合说明书附图进行详细描述。
请参阅图1，本发明实施例提供的溅射装置10包括真空腔，真空腔中设有衬底背板11，以及与衬底背板11相对的多根可旋转的靶材12，其中，任意相邻的两根靶材12之间的距离D为160mm～220mm，其中，任意相邻的两根靶材12之间的距离D可以根据溅射装置中真空腔的空间大小进行调节，但需要注意的是，在同一溅射装置中的不同相邻靶材之间的距离可以不同，但不同相邻靶材之间的距离的差值应在预设的阈值范围内，优选的，预设的阈值范围可以为±10mm。
具体的，溅射装置10包括但不限于物理气相沉积设备(Physical Vapor Deposition，以下简称PVD设备)，下面以型号为G8.5的PVD设备(以下简称G8.5PVD设备)为例，现有技术中的G8.5PVD设备中设有十二根靶材12，相邻两根靶材12之间的距离约为227.27mm，而在本发明实施例中，在G8.5PVD设备中设有十三根靶材12，相邻两根靶材12之间的距离为208mm±10mm；或者，在G8.5PVD设备中设有十四根靶材12，相邻两根靶材12之间的距离为192mm±10mm；或者，在G8.5PVD设备中设有十五根靶材12，相邻两根靶材12之间的距离为178mm±10mm。
本发明实施例提供的溅射装置10包括真空腔，真空腔中设有衬底背板11和多根可旋转的靶材12，其中，与现有技术相比，本发明实施例中的溅射装置10减小了任意相邻两根靶材12之间的距离，任意相邻两根靶材12之间的 距离为160mm～220mm，相邻两根靶材12之间的距离减小，每根靶材12的旋转角度也随着靶材之间的距离减小而减小，在制备薄膜时，在保证溅射装置10制得的薄膜的厚度均一的前提下，减小了同一靶材12溅射出的粒子到达衬底背板11上不同位置所经过的距离之间的差距，使得利用溅射出的粒子形成的薄膜的不同位置中的工艺气体含量趋于相同，因此制得的薄膜的不同位置的特性趋于相同，避免含有该薄膜的器件性能发生变质或失效，进而提高溅射装置10制备器件的良率。
进一步地，所述靶材12为空心靶材，在每根靶材12中部设置有可使靶材12旋转的旋转磁极，旋转磁极相对于衬底背板11可左右旋转的角度θ为30°～80°，其中旋转磁极相对与衬底背板11可左右旋转的角度θ即为旋转磁极所在的靶材12可旋转的角度。综合考虑任意相邻的两根靶材之间的距离和旋转磁极相对于衬底背板11可左右旋转的角度θ，能够进一步保证利用溅射出的粒子形成的薄膜的不同位置中的工艺气体含量的相同性和稳定性，下面将对现有技术和本发明进行比较：
例如：现有技术中在G8.5PVD设备中设有十二根靶材，相邻两根靶材之间的距离约为227.27mm，每根靶材中旋转磁极相对于衬底背板可左右旋转的最小角度大于30°，每根靶材中旋转磁极相对于衬底背板可左右旋转的最大角度大于80°，请参阅图2a，图2a为现有技术制得的薄膜中的工艺气体的含量与薄膜位置的关系图，横轴表示薄膜位置，纵轴表示工艺气体的单位含量，图2a中的折线起伏很大，薄膜中不同位置的工艺气体的单位含量最大相差30，可以得知现有技术制得的薄膜中的工艺气体含量不均。
在本发明实施例中，G8.5PVD设备中设有十三根靶材12，相邻两根靶材之间的距离为208mm±10mm，每根靶材12中旋转磁极相对于衬底背板11可左右旋转的角度θ为50°～80°，请参阅图2b，图2b为本发明实施例中制得的薄膜中的工艺气体的含量与薄膜位置的关系图，横轴与纵轴的意义与图2a相同，与图2a相比，图2b中的折线起伏较小，薄膜中不同位置的工艺气体的单位含量最大相差20，可以得知与现有技术相比，本发明实施例中制得 的薄膜中的工艺气体含量的均匀度已得到提升，趋于相同。
或者，在本发明实施例中，G8.5PVD设备中设有十四根靶材12，相邻两根靶材12之间的距离为192mm±10mm，每根靶材12中旋转磁极相对与于衬底背板11可左右旋转的角度θ为40°～70°，请参阅图2c，图2c为本发明实施例中制得的薄膜中的工艺气体的含量与薄膜位置的关系图，横轴与纵轴的意义与图2a相同，与图2a相比，图2c中的折线起伏较小，薄膜中不同位置的工艺气体的单位含量最大相差15，可以得知与现有技术相比，本发明实施例中制得的薄膜中的工艺气体含量的均匀度已得到提升，趋于相同。
或者，在本发明实施例中，G8.5PVD设备中设有十五根靶材12，相邻两根靶材12之间的距离为178mm±10mm，每根靶材12中旋转磁极相对与于衬底背板11可左右旋转的角度θ为30°～60°，请参阅图2d，图2d为本发明实施例中制得的薄膜中的工艺气体的含量与薄膜位置的关系图，横轴与纵轴的意义与图2a相同，与图2a相比，图2d中的折线起伏较小，薄膜中不同位置的工艺气体的单位含量最大相差10，可以得知与现有技术相比，本发明实施例中制得的薄膜中的工艺气体含量的均匀度已得到提升，趋于相同。
为了提高制得的整个薄膜的厚度的均一度，与衬底背板11的边缘区域相对的靶材12中的旋转磁极相对于衬底背板11可左右旋转的角度，小于所述真空腔中的其他靶材12中的旋转磁极相对于衬底背板11可左右旋转的角度；例如，请参阅图2，靶材A与靶材C为与衬底背板11的边缘区域相对的靶材，靶材A与靶材C中旋转磁极相对与衬底背板可左右旋转的角度均为θ1，靶材B中旋转磁极相对与衬底背板11可左右旋转的角度为θ2，其中，θ2＞θ1。
为了使得真空腔中的工艺气体分布更加均匀，从而使得制得的薄膜中的工艺气体含量分布均匀，本发明实施例对溅射装置10的气孔15分布也进行了改进。请参阅图3，任意相邻的两根靶材12之间设有呈竖列排列的多个用于向真空腔内注入工艺气体的气孔组，比如，如图3所示，溅射装置10的真空腔中设有八根靶材12，任意相邻两根靶材12之间设有一列气孔组，真空腔中共设有七列气孔组。其中，每个气孔组包括多个气孔15；相邻的两列气孔 组中分别位于起始端的气孔组到靶材12的顶端的距离不同，比如，如图3所示，第一列气孔组的起始端的气孔组到靶材12的顶端的距离为R2，第二列气孔组的起始端的气孔组到靶材2的顶端的距离为R3，R2≠R3，如此设置与衬底背板11边缘对应的气孔组，使得通过气孔组注入到真空腔中在衬底背板11的边缘的工艺气体分布更加均匀。
按照气孔组中气孔15的具体分布位置划分，气孔组包括第一气孔组13或第二气孔组14，请参阅图4，第一气孔组13包括四个气孔15，四个气孔15呈菱形排布，分别位于菱形的上、下、左、右四个角上；第二气孔组14包括两个气孔15，两个气孔15呈菱形排布，分别位于菱形的左、右两个角上；如此设置气孔组中的气孔15分布，使得真空腔内的工艺气体分布更加均匀，从而使得制得的薄膜中所含的工艺气体的分布也更加均匀，进一步提高了溅射装置10制备器件的良率。
进一步的，为了提高真空腔中工艺气体的均匀程度，相邻的两列气孔组中位于起始端的气孔组分别为第一气孔组13和第二气孔组14，如图3所示，比如，溅射装置10的真空腔中设有八根靶材12，位于第一根靶材12和第二根靶材12之间的第一列气孔组的起始端的气孔组为第一气孔组13，位于第二根靶材12和第三根靶材12之间的第二列气孔组的起始端的气孔组为第二气孔组14。优选的，位于起始端的第一气孔组13到靶材的顶端的距离为26mm±5mm，即R2＝26mm±5mm；位于起始端的第二气孔组14到靶材的顶端的距离为20mm±5mm，即R3＝20mm±5mm。
需要注意的是，相邻的两列气孔组之间的距离与相邻的两根靶材12之间的距离相同，如图3所示，相邻的两列气孔组之间的距离R1与相邻的两根靶材12之间的距离D相同，即R1＝D。
为了进一步提升真空腔中工艺气体的均匀程度，相邻的两列气孔组在同一根靶材12上的投影是相互间隔的，如图3所示，第一列气孔组中的第一个气孔组和第二列气孔组中的第一个和第二个气孔组不在同一水平线上，第一列气孔组沿水平方向到第二根靶材上的投影与第二列气孔组沿水平方向到第 二根靶材12上的投影是相互间隔的。
在本实施例中，兼顾真空腔内工艺气体的均匀度与气孔组设置数量，优选的，同一列中相邻的两个气孔组之间的距离为442mm±5mm，比如：如图3所示，第一列气孔组中的第一个气孔组与第二个气孔组之间的距离为442mm±5mm。
需要说明的是，本发明实施例也可以利用现有技术中呈陈列排布的气孔15，但只使用其中的部分气孔15向真空腔中注入工艺气体，优选的，相邻两列气孔15中，向真空腔中注入工艺气体的气孔15在任意一根靶材上的投影是相互间隔的；比如：如图5所示，实心圆和空心圆均为气孔15，实心圆表示向真空腔中注入工艺气体的气孔15，空心圆表示不向真空腔中注入工艺气体的气孔15。上述方式可以在不改变现有技术中气孔15分布的条件下，提升真空腔中工艺气体的均匀程度。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
例如，根据本发明的实施例的溅射装置，可以根据需要只使用其中的部分气孔15向真空腔中注入工艺气体，优选的，相邻两列气孔15中，向真空腔中注入工艺气体的气孔15在任意一根靶材上的投影是相互间隔的；比如：如图5所示，实心圆和空心圆均为气孔15，实心圆表示向真空腔中注入工艺气体的气孔15，空心圆表示不向真空腔中注入工艺气体的气孔15。上述方式可以在本发明的实施例的溅射装置的气孔15分布的条件下，进一步提升真空腔中工艺气体的均匀程度。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (15)

  1. 一种溅射装置，包括真空腔，所述真空腔中设有衬底背板以及与所述衬底背板相对的多根可旋转的靶材，其中，任意相邻的两根所述靶材之间的距离为160mm～220mm。
  2. 根据权利要求1所述的溅射装置，其中，所述靶材为空心靶材，在每根所述靶材中部设置有可使靶材旋转的旋转磁极，所述旋转磁极使得靶材相对于衬底背板可左右旋转的角度为30°～80°。
  3. 根据权利要求1或2所述的溅射装置，其中，所述真空腔中设有十三根靶材，其中，任意相邻的两根所述靶材之间的距离为208mm±10mm；所述靶材相对于衬底背板可左右旋转的角度为50°～80°。
  4. 根据权利要求1或2所述的溅射装置，其中，所述真空腔中设有十四根靶材，其中，任意相邻的两根所述靶材之间的距离为192mm±10mm；所述靶材相对于衬底背板可左右旋转的角度为40°～70°。
  5. 根据权利要求1或2所述的溅射装置，其中，所述真空腔中设有十五根靶材，其中，任意相邻的两根所述靶材之间的距离为178mm±10mm；所述靶材相对于衬底背板可左右旋转的角度为30°～60°。
  6. 根据权利要求2所述的溅射装置，其中，与所述衬底背板的边缘区域相对的所述靶材相对于衬底背板可左右旋转的角度小于所述真空腔中的其他所述靶材相对于衬底背板可左右旋转的角度。
  7. 根据权利要求1所述的溅射装置，其中，任意相邻的两根所述靶材之间设有呈竖列排列的多个用于向所述真空腔内注入工艺气体的气孔组，每个所述气孔组包括多个气孔；相邻的两列所述气孔组中的分别位于起始端的气孔组到所述靶材的顶端的距离不同。
  8. 根据权利要求7所述的溅射装置，其中，所述气孔组包括第一气孔组或第二气孔组，所述第一气孔组包括四个气孔，所述四个气孔呈菱形排布，分别位于菱形的上、下、左、右四个角上；所述第二气孔组包括两个气孔， 所述两个气孔呈菱形排布，分别位于菱形的左、右两个角上。
  9. 根据权利要求7或8所述的溅射装置，其中，相邻的两列所述气孔组中位于起始端的所述气孔组分别设置为所述第一气孔组和所述第二气孔组。
  10. 根据权利要求9所述的溅射装置，其中，位于起始端的所述第一气孔组到所述靶材的顶端的距离为26mm±5mm，位于起始端的所述第二气孔组到所述靶材的顶端的距离为20mm±5mm。
  11. 根据权利要求7所述的溅射装置，其中，相邻的两列所述气孔组之间的距离与相邻的两根所述靶材之间的距离相同。
  12. 根据权利要求9所述的溅射装置，其中，相邻的两列气孔组在同一根所述靶材上的投影是相互间隔的。
  13. 根据权利要求6所述的溅射装置，其中，同一列中相邻的两个所述气孔组之间的距离为442mm±5mm。
  14. 根据权利要求7所述的溅射装置，其中溅射装置能够根据控制气孔进气，使得部分气孔进气同时部分气孔不进气，从而控制工艺气体的均匀程度。
  15. 根据权利要求14所述的溅射装置，其中溅射装置能够控制气孔进气，使得注入工艺气体的气孔是相互间隔的。
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