WO2015154908A1 - Semi-conducteur de puissance à extinction avec centrage et fixation améliorés d'un anneau de grille et son procédé de fabrication - Google Patents

Semi-conducteur de puissance à extinction avec centrage et fixation améliorés d'un anneau de grille et son procédé de fabrication Download PDF

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Publication number
WO2015154908A1
WO2015154908A1 PCT/EP2015/053697 EP2015053697W WO2015154908A1 WO 2015154908 A1 WO2015154908 A1 WO 2015154908A1 EP 2015053697 W EP2015053697 W EP 2015053697W WO 2015154908 A1 WO2015154908 A1 WO 2015154908A1
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WO
WIPO (PCT)
Prior art keywords
ring
gate
wafer
main side
semiconductor layer
Prior art date
Application number
PCT/EP2015/053697
Other languages
English (en)
Inventor
Hendrik RAVENER
Tobias Wikstroem
Hermann Amstutz
Norbert Meier
Original Assignee
Abb Technology Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Technology Ag filed Critical Abb Technology Ag
Priority to EP15708758.6A priority Critical patent/EP3130004B1/fr
Priority to CN201580019125.1A priority patent/CN106537578B/zh
Priority to JP2016561649A priority patent/JP6320564B2/ja
Priority to KR1020167030144A priority patent/KR102064035B1/ko
Publication of WO2015154908A1 publication Critical patent/WO2015154908A1/fr
Priority to US15/290,377 priority patent/US10249747B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/1302—GTO - Gate Turn-Off thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

La présente invention concerne un semi-conducteur de puissance à extinction (1) présentant une tranche (10) avec une région active et une région de terminaison entourant la région active ; un anneau (70) en caoutchouc en tant que passivation de bord pour la tranche (10) ; et un anneau (60) de grille placé sur un contact (40) de grille en forme d'anneau sur la région de terminaison afin d'entrer en contact avec les électrodes de grille d'au moins une cellule de thyristor formée dans la région active de la tranche. Dans le semi-conducteur de puissance à extinction (1) de l'invention, la surface circonférentielle externe de l'anneau de grille est en contact avec l'anneau en caoutchouc afin de définir la bordure interne de l'anneau (70) en caoutchouc. Dans l'invention, la zone occupée par le contact (40) de grille en forme d'anneau sur la région de bordure ou de terminaison peut être réduite au minimum. La surface supérieure de l'anneau (60) de grille et la surface supérieure de l'anneau (70) en caoutchouc forment une surface continue qui s'étend dans un plan parallèle à la première face principale (11) de la tranche (10). Dans un procédé de fabrication du dispositif, l'anneau (60) de grille est utilisé sous la forme d'une paroi latérale interne d'un moule destiné à mouler l'anneau (70) en caoutchouc.
PCT/EP2015/053697 2014-04-10 2015-02-23 Semi-conducteur de puissance à extinction avec centrage et fixation améliorés d'un anneau de grille et son procédé de fabrication WO2015154908A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP15708758.6A EP3130004B1 (fr) 2014-04-10 2015-02-23 Dispositif semi-conducteur de puissance blocable et procédé de sa fabrication
CN201580019125.1A CN106537578B (zh) 2014-04-10 2015-02-23 具有栅环的改进定中心和固定的关断功率半导体装置及其制造方法
JP2016561649A JP6320564B2 (ja) 2014-04-10 2015-02-23 ゲートリングのセンタリングおよび固定が改善されたターンオフ電力半導体およびその製造方法
KR1020167030144A KR102064035B1 (ko) 2014-04-10 2015-02-23 게이트 링의 향상된 센터링 및 고정을 갖는 턴-오프 전력 반도체 디바이스, 및 그것을 제조하기 위한 방법
US15/290,377 US10249747B2 (en) 2014-04-10 2016-10-11 Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14164195.1 2014-04-10
EP14164195 2014-04-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/290,377 Continuation US10249747B2 (en) 2014-04-10 2016-10-11 Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2015154908A1 true WO2015154908A1 (fr) 2015-10-15

Family

ID=50478270

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/053697 WO2015154908A1 (fr) 2014-04-10 2015-02-23 Semi-conducteur de puissance à extinction avec centrage et fixation améliorés d'un anneau de grille et son procédé de fabrication

Country Status (6)

Country Link
US (1) US10249747B2 (fr)
EP (1) EP3130004B1 (fr)
JP (1) JP6320564B2 (fr)
KR (1) KR102064035B1 (fr)
CN (1) CN106537578B (fr)
WO (1) WO2015154908A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021156293A1 (fr) * 2020-02-03 2021-08-12 Abb Power Grids Switzerland Ag Dispositif à semi-conducteur de puissance à conduction inverse et son procédé de fabrication
JP7432093B2 (ja) * 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド ゲートランナ付きターンオフパワー半導体デバイス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370180A (en) * 1979-10-03 1983-01-25 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing power switching devices
JPH07312420A (ja) * 1994-05-18 1995-11-28 Toyo Electric Mfg Co Ltd 圧接形半導体装置のゲート電極構造
US5633536A (en) * 1995-06-20 1997-05-27 Mitsubishi Denki Kabushiki Kaisha Press contact type semiconductor device
US6303987B1 (en) * 1999-01-18 2001-10-16 Mitsubishi Denki Kabushiki Kaisha Compression bonded type semiconductor device
US20090096503A1 (en) * 2005-11-14 2009-04-16 Forschungsgemeinschaft Fur Leistungselektronik Und Elektrische Antriebe (Fgla) E.V. Semiconductor device comprising a housing containing a triggering unit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
EP0325774B1 (fr) * 1988-01-27 1992-03-18 Asea Brown Boveri Ag Dispositif semi-conducteur de puissance à extinction
JPH05218397A (ja) * 1992-01-31 1993-08-27 Meidensha Corp 圧接型半導体素子
JP3214236B2 (ja) * 1993-06-30 2001-10-02 株式会社日立製作所 半導体装置及び電力変換装置
EP0696066A3 (fr) * 1994-06-30 1998-06-24 Hitachi, Ltd. Dispositif semi-conducteur de commutation et convertisseur de puissance
JP3319227B2 (ja) * 1995-06-29 2002-08-26 三菱電機株式会社 電力用圧接型半導体装置
EP1298733A1 (fr) * 2001-09-28 2003-04-02 ABB Schweiz AG Dispositif blocable à haute puissance
JP4073801B2 (ja) * 2003-02-12 2008-04-09 三菱電機株式会社 圧接型半導体装置
JP5726898B2 (ja) * 2009-12-22 2015-06-03 アーベーベー・テヒノロギー・アーゲー パワー半導体デバイス
DE112011102014T5 (de) * 2010-06-17 2013-07-11 Abb Technology Ag Leistungshalbleitervorrichtung
WO2012041958A2 (fr) * 2010-09-29 2012-04-05 Abb Technology Ag Dispositif à semi-conducteur de puissance à conduction inverse

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370180A (en) * 1979-10-03 1983-01-25 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing power switching devices
JPH07312420A (ja) * 1994-05-18 1995-11-28 Toyo Electric Mfg Co Ltd 圧接形半導体装置のゲート電極構造
US5633536A (en) * 1995-06-20 1997-05-27 Mitsubishi Denki Kabushiki Kaisha Press contact type semiconductor device
US6303987B1 (en) * 1999-01-18 2001-10-16 Mitsubishi Denki Kabushiki Kaisha Compression bonded type semiconductor device
US20090096503A1 (en) * 2005-11-14 2009-04-16 Forschungsgemeinschaft Fur Leistungselektronik Und Elektrische Antriebe (Fgla) E.V. Semiconductor device comprising a housing containing a triggering unit

Also Published As

Publication number Publication date
EP3130004A1 (fr) 2017-02-15
KR102064035B1 (ko) 2020-02-17
CN106537578B (zh) 2019-02-15
US10249747B2 (en) 2019-04-02
EP3130004B1 (fr) 2019-05-08
KR20160143707A (ko) 2016-12-14
US20170033208A1 (en) 2017-02-02
CN106537578A (zh) 2017-03-22
JP2017517875A (ja) 2017-06-29
JP6320564B2 (ja) 2018-05-09

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