WO2015100818A1 - 基板烘烤装置及其温度调节方法 - Google Patents

基板烘烤装置及其温度调节方法 Download PDF

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Publication number
WO2015100818A1
WO2015100818A1 PCT/CN2014/070990 CN2014070990W WO2015100818A1 WO 2015100818 A1 WO2015100818 A1 WO 2015100818A1 CN 2014070990 W CN2014070990 W CN 2014070990W WO 2015100818 A1 WO2015100818 A1 WO 2015100818A1
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Prior art keywords
film thickness
temperature
substrate
baking
hot plate
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English (en)
French (fr)
Inventor
姚江波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/241,823 priority Critical patent/US20150255356A1/en
Publication of WO2015100818A1 publication Critical patent/WO2015100818A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a substrate baking apparatus and a temperature adjustment method thereof. Background technique
  • the residual film rate of each area of the substrate after the light process is relatively strict. Generally, the residual film after yellow light is required. The rate uniformity is less than 20%, and some even require the residual film rate uniformity to be less than 10%.
  • the residual film rate refers to the residual film thickness of the unexposed portion after a certain process or some processes.
  • the substrate Generally, it should be in the yellow light process environment for about half an hour. In yellow light, the substrate should be cleaned, glued, vacuum dried, exposed, soft baked, developed, hard baked, etc. In practice, each process or process may cause The difference in residual film rate of each region in the substrate.
  • a technical problem to be solved by the present invention is to provide a substrate baking apparatus capable of improving the film thickness uniformity of a substrate.
  • the technical solution of the present invention is to provide a substrate baking apparatus having the following structure, comprising: a baking apparatus body for baking a substrate, comprising: a plurality of partitioned hot plates; Hot plate, and
  • the temperature adjustment mechanism is configured to adjust the heating temperature of each of the partition hot plates of the baking apparatus body.
  • the present invention has the following advantages: the temperature adjustment mechanism adjusts the temperature of each partition hot plate, and adjusts the temperature to adjust the film thickness of the substrate area corresponding to each partition hot plate, thereby improving the area of each substrate.
  • the uniformity of the film thickness makes the film thickness uniform.
  • the thermal plate is provided with a heat conducting layer, and the heat conducting layer covers each of the partitioned hot plates.
  • the heating temperature of the adjacent zone hot plates may vary greatly. If there is no temperature transition at the joint, the film thickness uniformity at the joint is likely to be poor.
  • the provision of a thermally conductive layer can provide a more uniform thermal conductivity, especially at the corners and junctions of the zoned hot plates.
  • the temperature adjustment mechanism comprises:
  • a film thickness monitoring unit configured to detect a film thickness of each region of the substrate corresponding to the partition hot plate
  • a data storage calculation unit connected to the film thickness monitoring unit, receiving film thickness data transmitted by the film thickness monitoring unit, and calculating a temperature value to be adjusted by each zone hot plate;
  • a temperature adjustment unit connected to the receiving data storage calculation unit and the baking device body, and receiving the data storage calculation unit Transfer the data and adjust the temperature of each zone's hot plate accordingly.
  • the temperature of each zone hot plate can be adjusted according to the actual situation, so that the film thickness uniformity is better.
  • each of the zoned hot plates includes a plate body and a heating member disposed below the plate body, the heating members being coupled to the temperature adjustment mechanism.
  • the heating temperature of the heating member corresponding to each of the zone hot plates is separately controlled by a temperature adjustment mechanism.
  • the heating member is generally a resistance wire or a heating wire. The structure is simpler, the cost is lower, and it is easy to implement.
  • the distance between the hot plate and the substrate can be adjusted. According to different situations in the field, the distance between the hot plate and the substrate is adjusted to make the film thickness uniform.
  • the distance between the hot plate and the substrate is 5 to 20 mm. It can ensure the heating effect of heating the substrate by the partition hot plate to ensure the uniformity of the film thickness.
  • Another technical problem to be solved by the present invention is to provide a method for adjusting the heating temperature of the substrate baking apparatus, which can pass the corresponding partitions according to the residual film thickness of each area of the substrate.
  • the heating temperature of the hot plate is adjusted to increase the film thickness uniformity of the substrate.
  • a technical solution is provided to provide a method for adjusting the heating temperature of the substrate baking apparatus of the present invention, which comprises the following steps - the substrate passes the temperature after performing the first yellow light process
  • the adjusting mechanism detects the residual film thickness of each region, and calculates a corresponding temperature compensation value according to the relationship between the residual film thickness and the temperature, and the temperature adjusting mechanism adjusts the heating of each partition hot plate of the baking device body according to the temperature compensation value. temperature.
  • the method can test the residual film thickness of a substrate before a large number of substrates arrive, and then adjust the heating temperature of each partition hot plate of the baking device body to improve the film thickness uniformity and yield of a large number of substrates.
  • the method can also be used for a plurality of substrates for performing a yellow light process. After the first yellow light process in the multiple yellow light process is completed, the heating temperature is adjusted to ensure the final film thickness uniformity of the substrate.
  • the temperature adjustment mechanism includes a film thickness monitoring unit, a data storage unit, and a temperature adjustment unit;
  • the film thickness monitoring unit detects the residual film thickness of each area of the substrate, and sends the residual film thickness data to the data storage calculation unit;
  • the data storage calculation unit compares with the stored reference value, calculates a temperature compensation value according to the relationship between the stored film thickness and the temperature, and sends the temperature compensation value to the temperature adjustment unit;
  • the temperature adjustment unit adjusts the output power of each partition hot plate of the baking device body according to the temperature compensation value. It is easy to operate by adjusting the output power of the partition hot plate to adjust the temperature of the hot plates in each zone.
  • the residual film thickness is proportional to temperature, temperature and power. Linear adjustment relationship, It is better to adjust the film thickness uniformity.
  • the output power is lowered; when the residual film thickness value is lower than the reference value, the output power is increased.
  • a high residual film thickness indicates a good baking effect, and the output power can be appropriately lowered to lower the heating temperature.
  • the residual film thickness is low, the baking stability is poor, and the output power needs to be increased to increase the temperature.
  • the conditioning method can be used in a soft bake and/or hard bake process in a yellow light process.
  • adjusting the yellow the temperature of the soft or hard bake in the light process, or adjusting the temperature of the soft and hard bake at the same time to achieve a better film thickness uniformity.
  • FIG. 1 is a schematic view showing the structure of a specific embodiment of a baking apparatus body in a substrate baking apparatus of the present invention.
  • Figure 2 is a schematic view showing the structure of the hot plate in the body of the baking apparatus of Figure 1.
  • Fig. 3 is a schematic view showing the structure of a specific embodiment of the substrate baking apparatus of the present invention. Specific lung
  • the substrate baking apparatus of the present invention comprises a temperature adjustment mechanism 10 and a baking apparatus body 6 for baking the substrate.
  • the baking apparatus body 6 includes;
  • a hot plate 2 (shown in FIG. 2) composed of a plurality of partitioned hot plates 2.1, each of the partitioned hot plates 2.1 includes a plate body and a heating member 1 disposed under the plate body; the heating member 1 is generally made of a resistance wire or The heating temperature of the heating wire, the electric resistance wire or the heating wire is adjusted by the temperature adjusting mechanism 10;
  • the heat conducting layer 3 is disposed on the hot plate 2, the heat conducting layer 3 covers the partition hot plates 2.1; preferably, the heat conducting layer 3 is a heat conducting copper plate; the substrate chamber 4 is disposed in the baking apparatus body 6, in the heat conducting layer 3 and the top a substrate between the covers, the substrate chamber 4 is located on the heat conductive layer 3, the substrate is placed in the substrate chamber 4, the substrate is not in direct contact with the heat conductive layer 3, and the substrate is generally supported by supporting the thimble, that is, between the heat conductive layer 3 and the substrate Mainly through the air heat conduction-venting member 5, which includes a plurality of vent holes provided in the top cover of the substrate chamber 4 and air passages communicating with the vent holes.
  • the ventilation member 5 is for dissipating heat to the substrate chamber 4.
  • the distance between the thermal plate 2 and the substrate or between the thermally conductive layer 3 and the substrate can be adjusted when the substrate is mounted.
  • the adjustment of the distance between the hot plate 2 and the substrate can be achieved by means of a support ejector capable of adjusting the length.
  • the distance between the hot plate 2 and the substrate is 5 to 20 mm.
  • the temperature adjustment mechanism] 0 includes - a film thickness monitoring unit 9 configured to detect a film thickness of each region of the substrate corresponding to the partition hot plate 2.1;
  • the data storage calculation unit 8 is connected to the film thickness monitoring unit 9, receives the film thickness data transmitted by the film thickness monitoring unit 9, and calculates the temperature value to be adjusted by each of the zone hot plates 2.1;
  • the present invention also discloses a method for adjusting the heating temperature of the substrate baking apparatus.
  • the temperature adjustment mechanism includes a film thickness detecting sensor and a controller including the calculating unit, and the method includes the following steps: after the first yellow light process, the substrate passes through the film thickness detecting sensor The film thickness is detected and the residual film thickness is transmitted to the controller, and the controller calculates a corresponding temperature compensation value according to the relationship between the residual film thickness and the temperature, and then the controller realizes the current of the heating member 1 such as the resistance wire. Adjustment of the heating temperature of each zone hot plate 2.1.
  • the temperature adjustment mechanism 10 includes a film thickness monitoring unit 9, a data storage calculation unit 8, and a temperature adjustment unit 7.
  • the film thickness monitoring unit 9 detects the residual film thickness of each area of the substrate, and transmits the residual film thickness data to the data storage calculation unit 8 ;
  • the data storage calculation unit 8 compares with the stored reference value, according to the stored film thickness and
  • the temperature compensation value is calculated and sent to the temperature adjustment unit 7 ;
  • the temperature adjustment unit 7 adjusts the output power of each of the partition hot plates 2.1 of the baking apparatus body 6 according to the temperature compensation value.
  • the residual film thickness is proportional to temperature, temperature, and power.
  • the output power when the residual film thickness value is higher than the reference value, the output power is lowered; when the residual film thickness value is lower than the reference value, the output power is increased.
  • the effect of increasing the uniformity of the film thickness is achieved by adjusting the output power.
  • the method for adjusting the heating temperature of the substrate baking apparatus of the present invention can be separately performed in a soft baking process or a hard baking process in a yellow light process, or in a soft baking process or a hard baking process.
  • the adjustment method adjusts the heating temperature of the baking apparatus body 6 in the soft baking and the baking apparatus body 6 in the hard baking, respectively.
  • the substrate baking apparatus and the temperature adjusting method thereof of the invention can improve the uniformity of the residual film rate after the halftone layer yellow light, and reduce the unevenness in the dry etching (Dry Etch) caused by the uneven thickness of the film.
  • the spot (Muni) and the unevenness of the thickness of the wire on the substrate are inconsistent with each other to improve the display performance of the TFT-LCD.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

一种基板烘烤装置，包括：用于对基板进行烘烤的烘烤设备本体（6）和温度调整机构（10），烘烤设备本体（6）包括由若干个分区热板（2.1）构成的热板（2），温度调整机构（10）用于调整烘烤设备本体（6）的各分区热板（2.1）的加热温度。基板烘烤装置的温度调节方法包括以下步骤：基板在进行第一次黄光制程后，通过温度调整机构（10）对各区域的残膜厚度进行检测，并根据残膜厚度与温度之间的关系计算出相应的温度补偿值，温度调整机构（10）根据温度补偿值调整烘烤设备本体（6）的各分区热板（2.1）的加热温度。该基板烘烤装置能提高基板的膜厚均匀性。

Description

基板烘烤装置及其赚调节方法
技术领域
本发明涉及显示技术领域， 具体涉及一种基板烘烤装置及其温度调节方法。 背景技术
在 TFT- LCD (薄膜场效应晶体管液晶显示器） 四道光罩的半色调 （haf iom 技术中对黄 ：光制程后基板各区域的光阻残膜率要求比较严格。 一般会要求黄光后残膜率均匀性达到 20% 以下， 有些甚至要求残膜率均匀性达到 10%以下。 残膜率指在经过某道工序或某些工序后， 未曝光部分的残膜厚度。现有技术中，基板一般要在黄光制程环境中半小时左右。而在黄光中， 基板要经过清洗、 涂胶、 真空干燥、 曝光、 软烘、 显影、 硬烘等制程， 实际中每道工序或制程 都有可能造成基板内各区域的残膜率的差异。 发明内容
本发明所要解决的一个技术 题是， 提供一种能提高基板的膜厚均匀性的基板烘烤装置。 针对该技术问题， 本发明的技术解决方案是， 提供一种具有以下结构的基板烘烤装置， 包 括： 用于对基板进行烘烤的烘烤设备本体， 其包括由若干个分区热板构成的热板， 和
温度调整机构， 用于调整烘烤设备本体的各分区热板的加热温度。
与现有技术相比， 本发明具有以下优点： 通过温度调整机构调整各分区热板的温度， 通过 调整温度达到调节各分区热板对应的基板区域的膜厚的目的，从而提高基板各区域的膜厚均匀 性， 使得膜厚均匀性更好。
在一个优选的实施例中， 所述热板上设有导热层， 所述导热层覆盖各分区热板。相邻分区 热板的加热温度可能有较大的差异， 若没有连接处的温度过渡， 容易导致连接处的膜厚均匀性 不好。 设置导热层能起到导热更均匀的作用， 尤其是对于分区热板的边角处和连接处。
在一个实施例中， 所述温度调整机构包括：
膜厚监测单元， 用于检测分区热板对应的基板各区域的膜厚；
数据存储计算单元， 与膜厚监测単元连接， 接收膜厚监测单元传送的膜厚数据， 并计算出 各分区热板应调整的温度值；
温度调节单元， 与接收数据存储†算单元及烘烤设备本体连接，其接收数据存储†算单元 传送的数据， 并相应调整各分区热板的温度。
通过膜厚检测和温度补偿， 能根据实际情况来调整各分区热板的温度， ^而使得膜厚均匀 性更好。
在一个优选的实施例中，每个分区热板均包括板体和设在板体下的加热构件，所述加热构 件均与温度调整机构连接。通过温度调整机构来分别控制每个分区热板对应的加热构件的加热 温度。 一般加热构件优选为电阻丝或加热丝。 结构较简单， 成本较低， 容易实现。
在一个优选的实施例中， 所述热板与基板之间的距离能调节。根据现场不同的情况， 调整 热板与基板之间的距离使得膜厚均匀性更好。
在一个优选实施例中， 所述热板与基板之间的距离为 5〜20mm。 能保证分区热板对基板进 行加热的加热效果， 保证膜厚均匀性较好。
本发明所要解决的另一个技术问题是，提供一种用于对所述的基板烘烤装置的加热温度进 行调节的方法， 该方法能根据基板各区域的残膜厚度，通过对相应的各分区热板的加热温度进 行调节， 从而提高基板的膜厚均匀性。
针对该技术问题，提供的技术解决方案是， 提供一种用于对本发明的基板烘烤装置的加热 温度进行调节的方法， 其包括以下步骤- 基板在进行第一次黄光制程后，通过温度调整机构对各区域的残膜厚度进行检测， 并根据 残膜厚度与温度之间的关系计算出相应的温度补偿值，温度调整机构根据温度补偿值调整烘烤 设备本体的各分区热板的加热温度。
该方法可以在一大批基板到来之前，先对一个基板的残膜厚度进行测试，然后调整烘烤设 备本体的各分区热板的加热温度， 以提高大批基板的膜厚均匀性和良率。该方法也可以针对多 次进行黄光制程的基板， 在多次黄光制程中的第一次黄光制程完成后， 对加热温度进行调整， 从而保证基板最终的膜厚均匀性。
作为本发明的方法的一种改迸，所述温度调整机构包括膜厚监测单元、数据存储 #算单元 和温度调节单元；
膜厚监测单元对基板各区域的残膜厚度进行检测，并将残膜厚度数据发送给数据存储计算 单元；
数据存储计算单元与存储的基准值进行比较，根据存储的膜厚与温度之间的关系计算出温 度补偿值， 并发送给温度调节单元；
温度调节单元根据温度补偿值相应调整烘烤设备本体各分区热板的输出功率。通过调整分 区热板的输出功率来达到调节各分区热板的温度的目的， 容易操作。
在本发明的方法中， 所述残膜厚度与温度、 温度与功率均为正比例关系。 线性调节关系， 调节膜厚均匀性效果更好。
作为本发明的方法的另一种改进， 当残膜厚度值高于基准值时， 调低输出功率； 当残膜厚 度值低于基准值时， 调高输出功率。残膜厚度值高表示烘烤效果好， 可适当调低输出功率来降 低加热温度。 残膜厚度值低， 烘烤跗着稳定性差， 需要调高输出功率以提高温度。
作为本发明的方法的优选， 该调节方法能用于黄光制程中的软烘和 /或硬烘工序。 通过调 节黄:光制程中软烘或硬烘的温度，或者同时调节软烘和硬烘的温度来达到膜厚均匀性更好的目 的。 險團说明
图 1所示是本发明的基板烘烤装置中的烘烤设备本体的一种具体实施例的结构示意图。 图 2所示是图 1中的烘烤设备本体中的热板的一种结构示意图。
图 3所示是本发明的基板烘烤装置的一种具体实施例的结构示意图。 具体实肺式
下面结合附图和具体实施倒对本发明作进一步说明。
如图 3表示了本发明的基板烘烤装置的一种具体实施例。在该实施例中，本发明的基板烘 烤装置包括温度调整机构 10和用于对基板进行烘烤的烘烤设备本体 6。
如图 1所示为烘烤设备本体 6的一种具体结构。 该烘烤设备本体 6包括；
由若千个分区热板 2.1构成的热板 2 (如图 2所示） ， 每个分区热板 2.1均包括板体和设 在板体下的加热构件 1 ; 一般加热构件 1采用电阻丝或加热丝， 电阻丝或加热丝的加热温度由 温度调整机构 10调节；
导热层 3， 设在热板 2上， 该导热层 3覆盖各分区热板 2.1 ; 优选导热层 3为导热铜板； 基板室 4， 其为设在烘烤设备本体 6、 在导热层 3与顶盖之间的容腔， 该基板室 4位于导 热层 3上，基板置于基板室 4内，基板与导热层 3不直接接触，一般通过支撑顶针来支撑基板， 即导热层 3与基板之间主要通过空气导热- 通风构件 5， 其包括设在基板室 4的顶盖的若干个通风孔和与通风孔连通的通风道。 通风 构件 5用于对基板室 4散热。
在优选的实施例中， 安装基板时， 所述热板 2与基板之间或导热层 3与基板之间的距离能 调节。 可通过能调节长度的支撑顶针等方式来实现热板 2与基板之间的距离的调整。 优选地， 基板安装后， 所述热板 2与基板之间的距离为 5〜20mm。
如图 3所示， 温度调整机构】0包括- 膜厚监测单元 9， 用于检测分区热板 2.1对应的基板各区域的膜厚；
数据存储计算单元 8 , 与膜厚监測单元 9连接， 接收膜厚监测单元 9传送的膜厚数据， 并 计算出各分区热板 2.1应调整的温度值；
温度调节单元 7， 与接收数据存储计算单元 8及烘烤设备本体 6连接， 其接收数据存储计 算单元 8传送的数据， 并相应调整各分区热板 2.1的温度。
本发明还公开了一种用于对所述的基板烘烤装置的加热温度进行调节的方法。在第一个实 施例中， 温度调整机构包括膜厚检测传感器和包含计算单元的控制器， 其包括以下步骤- 基板在进行第一次黄光制程后，通过膜厚检测传感器对各区域的残膜厚度进行检测并将残 膜厚度传送给控制器，控制器根据残膜厚度与温度之间的关系计算出相应的温度补偿值，然后 控制器通过调整对加热构件 1 如电阻丝） 的电流实现对各分区热板 2.1的加热温度的调节。
在第二个实施例中， 如图 3所示， 所述温度调整机构 10包括膜厚监测单元 9、 数据存储 计算单元 8和温度调节单元 7。 膜厚监测单元 9对基板各区域的残膜厚度进行检测， 并将残膜 厚度数据发送给数据存储计算单元 8 ; 数据存储†算单元 8与存储的基准值进行比较， 根据存 储的膜厚与温度之间的关系计算出温度补偿值， 并发送给温度调节单元 7; 温度调节单元 7根 据温度补偿值相应调整烘烤设备本体 6各分区热板 2.1的输出功率。
在第一和第二个实施倒中， 所述残膜厚度与温度、 温度与功率均为正比例关系。
在第二个实施例中， 当残膜厚度值高于基准值时， 调低输出功率； 当残膜厚度值低于基准 值时， 调高输出功率。 通过调节输出功率起到提高膜厚均匀性的作用。
本发明的用于对所述的基板烘烤装置的加热温度进行调节的方法能单独 ]¾于黄光制程中 的软烘工序或硬烘工序， 或者在软烘工序或硬烘工序中同 使 该调节方法， 分别对软烘中的 烘烤设备本体 6及硬烘中的烘烤设备本体 6的加热温度进行调节。
本发明的基板烘烤装置及其温度调节方法能提高半色调 （half tone) 层黄光后残膜率均匀 性， 减少因膜厚不均引起的干法刻蚀（Dry Etch) 中的不均匀斑点 （Muni) 以及因基板上的导 线粗细与长短不一致而造成的电性不均等问题， 提高 TFT-LCD的显示性能。
虽然己经结合具体实施例对本发明进行了描述，然而可以理解， 在不脱离本发明的范围的 情况下， 可以对其进行各种改进或替换。 尤其是， 只要不存在结构上的 突， 各实施例中的特 征均可相互结合起来，所形成的组合式特征仍属于本发明的范围内。本发明并不局限于文中公 开的特定实施例， 而是包括落入权利要求的范围内的所有技术方案。

Claims

棚要求书
1 , 一种基板烘烤装置， 其中， 包括：
^于对基板进行烘烤的烘烤设备本体， 其包括由若千个分区热板构成的热板， 和 温度调整机构， 用于调整烘烤设备本体的各分区热板的加热温度。
2, 根据权利要求 1所述的基板烘烤装置， 其中， 所述热板上设有导热层， 所述导热层覆 盖各分区热板。
3 , 根据权利要求 1所述的基板烘烤装置， 其中， 所述温度调整机构包括：
膜厚监测单元， 用于检测分区热板对应的基板各区域的膜厚：
数据存储计算单元， 与膜厚监测单元连接， 接收膜厚监测单元传送的膜厚数据， 并计算出 各分区热板应调整的温度值；
温度调节单元， 与接收数据存储计算单元及烘烤设备本体连接， 其接收数据存储计算单元 传送的数据， 并相应调整各分区热板的温度。
4, 根据权利要求 i所述的基板烘烤装置， 其中， 每个分区热板均包括板体和设在板体下 的加热构件， 所述加热构件均与温度调整机构连接。
5 , 根据权利要求 1所述的基板烘烤装置， 其中， 所述热板与基板之间的距离能调节。
6, 根据权利要求 5所述的基板烘烤装置， 其中， 所述热板与基板之间的距离为 5〜20mm。
7, 一种用于对基板烘烤装置的温度进行调节的方法， 该基板烘烤装置包括用于对基板迸 行烘烤的烘烤设备本体， 其包括由若千个分区热板构成的热板， 和温度调整机钩， 用于调整烘 烤设备本体的各分区热板的加热温度： 其中， 该方法包括以下步骤：
基板在进行第一次黄光制程后，通过温度调整机构对各区域的残膜厚度进行检测， 并根据 残膜厚度与温度之间的关系计算出相应的温度补偿值，温度调整机构根据温度补偿值调整烘烤 设备本体的各分区热板的加热温度。
8 , 根据权利要求 7所述的方法， 其中， 所述温度调整机构包括膜厚监测单元、 数据存储 计算单元和温度调节单元；
膜厚监测单元对基板各区域的残膜厚度进行检测，并将残膜厚度数据发送给数据存储 算 单元；
数据存储计算单元与存储的基准值进行比较，根据存储的膜厚与温度之间的关系†算出温 度补偿值， 并发送给温度调节单元；
温度调节单元根据温度补偿值相应调整烘烤设备本体各分区热板的输出功率。
9, 根据权利要求 8所述的方法， 其中， 所述残膜厚度与温度、 温度与功率均为正比倒关 系。
10. 根据权利要求 8所述的方法， 其中， 当残膜厚度值高于基准值时， 调低输出功率； 当 残膜厚度值低于基准值^, 调高输出功率。
1 1 . 根据权利要求 9所述的方法， 其中， 当残膜厚度值高于基准值时， 调低输出功率； 当 残膜厚度值低于基准值时， 调高输出功率。
12. 根据权利要求 7所述的方法， 其中， 该调节方法能用于黄光制程中的软烘和 /或硬烘 工序。
】3. —种用干对基板烘烤装置的温度进行调节的方法， 该基板烘烤装置包括用干对基板进 行烘烤的烘烤设备本体， 其包括由若千个分区热板构成的热板， 和温度调整机构， 用于调整烘 烤设备本体的各分区热板的加热温度； 所述热板上设有导热层， 所述导热层覆盖各分区热板； 其中， 该方法包括以 T步骤- 基板在进行第一次黄光制程后，通过温度调整机构对各区域的残膜厚度进行检测， 并根据 残膜厚度与温度之间的关系计算出相应的温度补偿值，温度调整机构根据温度补偿值调整烘烤 设备本体的各分区热板的加热温度。
14. 根据权利要求 13所述的方法， 其中， 所述温度调整机构包括膜厚监测单元、 数据存 储†算单元和温度调节单元；
膜厚监测单元对基板各区域的残膜厚度进行检测，并将残膜厚度数据发送给数据存储计算 单元；
数据存储计算单元与存储的基准值进行比较，根据存储的膜厚与温度之间的关系^算出温 度补偿值， 并发送给温度调节单元；
温度调节单元根据温度补偿值相应调整烘烤设备本体各分区热板的输出功率。
15. 根据权利要求 i4所述的方法， 其中， 所述残膜厚度与温度、 温度与功率均为正比例 关系。
16. 根据权利要求 14所述的方法， 其中， 当残膜厚度值高于基准值时， 调低输出功率； 当残膜厚度值低于基准值时， 调高输出功率。
17. 根据权利要求 15所述的方法， 其中， 当残膜厚度值高于基准值时， 调低输出功率； 当残膜厚度值低于基准值时， 调高输出功率。
18. 根据权利要求 3所述的方法， 其中， 该调节方法能用于黄光制程中的软烘和 /或硬烘 工序。
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