WO2015064440A1 - 再生電子部品の製造方法及び接続構造体 - Google Patents

再生電子部品の製造方法及び接続構造体 Download PDF

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Publication number
WO2015064440A1
WO2015064440A1 PCT/JP2014/078066 JP2014078066W WO2015064440A1 WO 2015064440 A1 WO2015064440 A1 WO 2015064440A1 JP 2014078066 W JP2014078066 W JP 2014078066W WO 2015064440 A1 WO2015064440 A1 WO 2015064440A1
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WIPO (PCT)
Prior art keywords
electronic component
conductive
solder
particles
residue
Prior art date
Application number
PCT/JP2014/078066
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
石澤　英亮
敬士 久保田
Original Assignee
積水化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to KR1020157023039A priority Critical patent/KR102228473B1/ko
Priority to CN201480032746.9A priority patent/CN105379434B/zh
Priority to JP2014557265A priority patent/JP5836507B2/ja
Publication of WO2015064440A1 publication Critical patent/WO2015064440A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/12—Brushes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0218—Composite particles, i.e. first metal coated with second metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0257—Brushing, e.g. cleaning the conductive pattern by brushing or wiping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/041—Solder preforms in the shape of solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/176—Removing, replacing or disconnecting component; Easily removable component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Definitions

  • the present invention relates to a method for manufacturing a regenerated electronic component that removes a residue remaining on an electronic component after the electronic component bonded by a cured material layer of a conductive material is peeled off.
  • the present invention also relates to a connection structure using a regenerated electronic component obtained by the method for manufacturing a regenerated electronic component.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in the curable component.
  • the anisotropic conductive material is used for electrically connecting electrodes of various electronic components to obtain various connection structures.
  • Examples of the anisotropic conductive material include a connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), a connection between a semiconductor chip and a flexible printed circuit board (COF (Chip on Film)), and a semiconductor chip and glass. It is used for connection with a substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • connection of the electrode is poor or the state of the cured product is bad.
  • two electronic components may be peeled off.
  • the electronic component after peeling may be discarded, but may be reused. From the viewpoint of cost and environmental load, it is desirable to reuse the electronic component after peeling. Since electronic parts are relatively expensive, it is strongly desired to reuse electronic parts.
  • Patent Document 1 discloses a method for repairing a TCP of a printed wiring board in which the TCP is connected to the connection terminal of the printed wiring board via an anisotropic conductive film.
  • This repair method is a method of heating a defective TCP out of TCP and peeling it from the printed wiring board, and is harder than the anisotropic conductive film obtained by curing the ACF remaining in the TCP.
  • Patent Document 2 discloses a method for removing a residue of an anisotropic conductive adhesive.
  • a residue softening solvent is applied onto the residue of the anisotropic conductive adhesive remaining on the joint surface including the connection terminals of the electronic component, and the residue is removed by rubbing with a brush.
  • Patent Document 3 in a mounting body in which an electronic member is mounted on a wiring board via an anisotropic conductive film, the anisotropic conductive film is mechanically peeled from the wiring board, and the wiring board is removed.
  • a method of reusing is disclosed.
  • the anisotropic conductive film conductive particles having a compressive hardness K value of 2000 kgf / mm 2 in 10% compression deformation are dispersed in a binder having an elastic modulus at 150 ° C. of 10 MPa or less.
  • An anisotropic conductive film is used.
  • Patent Document 4 discloses a repair method in which at least two connectors connected via a conductive adhesive layer are separated and then reconnected using an anisotropic conductive film.
  • the residue of the said conductive adhesive layer which exists in the said connection body is removed using the repair cutter whose elastic modulus of a front-end
  • tip part is 2.1 GPa or more and 3.7 GPa or less.
  • Patent Documents 1 and 2 a specific brush or solvent is used to remove a residue that is a cured product of the conductive material.
  • Patent Documents 3 and 4 the physical properties of the conductive material are controlled.
  • particles having solder on a conductive surface may be used as the conductive particles contained in the conductive material. Solder melts at the time of connection between the electrodes, and is firmly bonded to the surface of the electronic component. For this reason, even after peeling, the solder residue is firmly bonded to the surface of the electronic component. When particles having solder on the conductive surface are used, there is a problem that it is more difficult to sufficiently remove the solder residue by the conventional residue removing method.
  • Patent Document 1 from the central portion, the rotating brush is placed in a direction parallel to the connection terminal of the printed wiring board and so as not to directly contact the resist formed on the printed wiring board.
  • a process is described in which the anisotropic conductive film in which the ACF is cured is scraped off by rotating to the end.
  • the brush is rotated in a direction parallel to the connection terminal, the removed anisotropic conductive film residue is scattered in a region other than the connection terminal, and other parts are formed by the conductive particles in the anisotropic conductive film. May cause problems such as short circuit and leak. Further, the anisotropic conductive film is removed only from the central portion to the end portion, and the anisotropic conductive film from the resist to the central portion cannot be removed.
  • anisotropic conductive film when an anisotropic conductive film is again applied on the printed wiring board, the regenerated TPC is attached, and mounting is performed, anisotropy occurs at the end of the anisotropic conductive film that has not been removed.
  • the conductive particles in the conductive film may be agglomerated due to stagnation, resulting in problems such as short circuits and leaks.
  • a molten metal alloy such as solder
  • the conductive particles stay together and agglomerate, causing short circuits and leaks, and being removed from the resist to the center.
  • the conductive particles may be excessively crushed on the anisotropic conductive film that is not.
  • the molten metal alloy particles such as molten solder spread more than the distance between the electrodes, which may cause a short circuit or a leak between adjacent terminals.
  • Patent Document 2 describes a residue removal method in which a residue softening solvent is applied on the residue of an anisotropic conductive adhesive and the residue is rubbed off with a brush.
  • a solvent for softening the anisotropic conductive adhesive it is necessary to use a solvent that has a large environmental load and is harmful to the human body, such as acetonylacetone.
  • acetonylacetone a solvent that has a large environmental load and is harmful to the human body
  • a molten metal alloy such as solder
  • the electrode and the molten metal alloy form a metal bond, so it is not necessary to soften the resin using a residual softening solvent.
  • the conductive particles cannot be removed.
  • the upper and lower electrodes cannot reach a predetermined distance during mounting, and a conduction failure may occur. Also, if conductive particles remain on the electrode, the conductive particle concentration becomes too high when the conductive adhesive is applied again, which may cause problems such as short circuit and leak between adjacent electrodes. There is sex.
  • Patent Document 3 in an anisotropic conductive film, conductive particles having a compression hardness K value at 10% compression deformation of not less than a predetermined value are dispersed in a binder having an elastic modulus at 150 ° C. of 10 MPa or less.
  • a manufacturing method having a repair method of reusing a wiring board while leaving a residue of an anisotropic conductive film on the wiring board is disclosed.
  • the conductive particles When the upper and lower electrodes are connected via the anisotropic conductive film, the conductive particles have a predetermined hardness so that the electrodes penetrate through the anisotropic conductive film in which the conductive particles remain. Need to touch.
  • Patent Document 4 in a repairing method in which at least two connecting members connected via a conductive adhesive layer are separated and then reconnected using an anisotropic conductive film, the elastic modulus of the tip portion is a predetermined value or less.
  • a method for removing the conductive adhesive layer using a repair cutter is disclosed.
  • Patent Document 4 describes that the elastic modulus at the tip is 2.1 GPa to 3.7 GPa.
  • resin, metal-plated resin core conductive particles, and metal particles that do not melt can be removed.
  • the conductive particles are conductive particles of a molten metal alloy such as solder, the conductive particles forming a metal bond with the electrode cannot be removed from the electrode by the repair cutter.
  • the conductive particles remaining on the electrodes cannot reach a predetermined distance between the upper and lower electrodes at the time of mounting, and a conduction failure may occur. Also, if conductive particles remain on the electrode, the conductive particle concentration becomes too high when the conductive adhesive is applied again, which may cause problems such as short circuit and leak between adjacent electrodes. There is sex.
  • An object of the present invention is to produce a regenerated electronic component that can effectively remove residues on the electronic component after peeling, even when conductive particles having solder on a conductive surface are used. Is to provide a method. Moreover, this invention provides the connection structure using the reproduction
  • the first electronic component having the electrode on the surface and the second electronic component having the electrode on the surface are in a state in which the surface on the electrode side faces the solder.
  • the first electronic component and the second electronic component are peeled off using a structure bonded with a cured material layer obtained by curing a conductive material containing conductive particles and a curable component on the surface.
  • At least one of the first electronic component after peeling and the second electronic component after peeling obtained by the step, the electronic component after peeling is present on the surface of the electronic component after peeling.
  • the residue is wiped off using a wiping member having an elastic modulus smaller than the elastic modulus of the electrode of the electronic component after peeling, Recycled electrons with residue removed Comprising the step of obtaining the goods, the manufacturing method of reproducing electronic component is provided.
  • the wiping member is a foam, and in another specific aspect, the wiping member is a melamine foam.
  • the residue is wiped using the wiping member in the presence of a solvent.
  • the method for manufacturing a regenerated electronic component includes heating the structure to a temperature higher than a glass transition temperature of the cured product layer of ⁇ 20 ° C. And a step of peeling the first electronic component and the second electronic component.
  • the method for manufacturing the recycled electronic component includes: a surface on the electrode side between the first electronic component and the second electronic component.
  • the elastic modulus E1 of the wiping member and the yield elastic modulus E2 of the solder are expressed by the formula: 0.15 ⁇ E1 / 1000 / E2 ⁇ 0. Satisfy 4
  • a regenerated electronic component obtained by the above-described regenerated electronic component manufacturing method an electronic component having an electrode on its surface, and a connection connecting the regenerated electronic component and the electronic component.
  • a connection structure is provided, wherein the connection part is formed of conductive particles or a cured material layer of a conductive material containing conductive particles and a curable component.
  • the residue after the separation in which the residue is present so as to remove the residue derived from the conductive material existing on the surface of the electronic component after separation. Since the residue is wiped off using a wiping member having an elastic modulus smaller than the elastic modulus of the electrode of the electronic component, the residue can be effectively removed, and good reproduction with reduced residue is achieved. An electronic component can be obtained.
  • FIG. 1 is a front cross-sectional view schematically showing an electronic component after peeling used in a method for manufacturing a recycled electronic component according to an embodiment of the present invention.
  • FIG. 2 is a front cross-sectional view for explaining each step of the method for manufacturing a recycled electronic component according to one embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing an example of conductive particles that can be used as a conductive material in the present invention.
  • FIG. 4 is a cross-sectional view showing a modification of the conductive particles.
  • FIG. 5 is a cross-sectional view showing another modified example of conductive particles.
  • FIG. 6 is a front cross-sectional view schematically showing a structure used in the method for manufacturing a regenerated electronic component according to one embodiment of the present invention.
  • FIG. 7 is a front cross-sectional view schematically showing an enlarged connection portion between the conductive particles and the electrodes in the structure shown in FIG.
  • FIG. 8 is a front cross-sectional view schematically showing an example of a connection structure using a recycled electronic component.
  • FIG. 9 is a front sectional view schematically showing a structure used in a method for manufacturing a regenerative electronic component according to another embodiment of the present invention.
  • FIG. 10 is a front cross-sectional view schematically showing another example of a connection structure using recycled electronic components.
  • the first electronic component having the electrode on the surface and the second electronic component having the electrode on the surface are in a state in which the surface on the electrode side is opposed to the conductive material.
  • a structure bonded with a cured product layer obtained by curing is used.
  • the conductive material includes conductive particles having a solder on a conductive surface and a curable component.
  • the first electronic component after peeling and the second after peeling obtained by peeling the first electronic component and the second electronic component.
  • the residue present on the surface of the peeled electronic component is removed.
  • a wiping member having an elastic modulus smaller than the elastic modulus of the electrode of the electronic component after peeling, in which the residue is present Is used.
  • the method for manufacturing a regenerated electronic component according to the present invention includes a step of wiping off the residue using the wiping member to obtain a regenerated electronic component from which the residue has been removed.
  • the method for manufacturing a regenerated electronic component according to the present invention has the above-described configuration, it is possible to effectively remove the residue and obtain a good regenerated electronic component with reduced residue remaining. it can.
  • conductive particles having solder on a conductive surface are used. After bonding the first and second electronic components, the solder is firmly bonded to the surface of the electronic component by solidifying after wetting and spreading the surface of the electrode after the solder is melted at the time of bonding. ing. It is generally difficult to remove such solder. In the electronic component after peeling, the solder is particularly likely to remain. On the other hand, in the method for manufacturing a recycled electronic component according to the present invention, since the specific wiping member is used, the residue can be easily removed even if the residue is solder.
  • the wiping member has an elastic modulus smaller than the elastic modulus of the electrode of the electronic component after peeling.
  • the relationship between the magnitudes of the elastic modulus means the relationship between the elastic modulus at the temperature at the time of wiping.
  • the said elasticity modulus shows the elasticity modulus of the surface of the electrode which is contacting the residue.
  • the said elasticity modulus shows the elasticity modulus of the surface of the wiping member contacted with a residue.
  • the above elastic modulus is measured using a dynamic ultra-micro hardness meter at a temperature at the time of wiping, with a triangular pyramid indenter (inter-ridge angle 115 °), and an indentation depth of 10 ⁇ m.
  • Examples of the dynamic ultra-small hardness meter include “DUH-211S” manufactured by SHIMADZU.
  • the wiping member is a foam
  • a non-foamed member is obtained using a material for forming the foam, and measurement can be performed in the same manner as described above.
  • the wiping member is a foam obtained by thermosetting a thermosetting material (thermosetting component)
  • the thermosetting material for forming the foam is used for thermosetting without foaming and foaming.
  • the member which has not been obtained can be obtained and measured in the same manner as described above.
  • the elastic modulus of the solder can be measured in the same manner as described above after the solder particles are dissolved on a metal plate such as Cu above the melting point of the solder and cooled.
  • the elastic modulus of the wiping member is preferably 15 GPa or less, more preferably 10 GPa or less. From the viewpoint of facilitating handling of the wiping member and further improving the removability of the residue, the elastic modulus of the wiping member is preferably 4 GPa or more, more preferably 6 GPa or more.
  • the absolute value of the difference between the elastic modulus of the electrode and the elastic member of the wiping member is preferably 50 GPa or more, and preferably 120 GPa or less.
  • the elastic modulus of the wiping member is preferably lower than that of solder.
  • the absolute value of the difference between the elastic modulus of the wiping member and the elastic modulus of the solder is preferably 5 GPa or more, and preferably 60 GPa or less.
  • the elastic modulus E1 (GPa) of the wiping member and the yield elastic modulus E2 (GPa) of the solder satisfy the relationship of the following formula.
  • E1 / 1000 / E2 exceeds 0.15, the solder can be sufficiently removed from the electrode.
  • E1 / 1000 / E2 is less than 0.4, the surface of the electrode is more difficult to be damaged.
  • the yield elastic modulus of the solder is measured by the same measurement method as the above elastic modulus and the same apparatus as the above elastic modulus except that a columnar indenter is used, and the inflection point in the indentation load and indentation depth curve. Can be obtained from
  • the surface in contact with the residue when the wiping member is wiped is preferably a flat surface.
  • the said wiping member is a foam, even if there are fine voids (recesses) formed on the surface of the foam, the surface is flat if the surface is flat as a whole. .
  • the surface in contact with the residue of the wiping member is preferably larger than the electrode width.
  • the form of the wiping member includes a foam form, a cloth form, a mesh form, and the like.
  • the wiping member is preferably a foam.
  • a foam having a specific elastic modulus By using a foam having a specific elastic modulus, the residue can be more effectively removed.
  • the material of the foam is not particularly limited.
  • the material of the foam include melamine compounds, polyolefin compounds, polysilicones, and urethanes.
  • a melamine compound is preferable from the viewpoint of further improving the removability of the residue.
  • the foam whose material is a melamine compound is a melamine foam.
  • the wiping member is preferably a melamine foam.
  • the foam size is preferably 1 ⁇ m or more, preferably 1000 ⁇ m or less.
  • the foam size is not less than the above lower limit, the resin removability is further improved.
  • the foam size is not more than the above upper limit, the durability of the foam when repeating the removal of the residue is further improved.
  • the thickness of one foamed foam film is preferably 1 ⁇ m or more, and preferably 200 ⁇ m or less.
  • the thickness of one foamed foam film is preferably thinner than the distance between adjacent electrodes.
  • the thickness of the foam coating is not less than the above lower limit, the durability of the foam is further improved when the removal of the residue is repeated.
  • the thickness of the foam coating is not more than the above upper limit, the resin removability is further improved.
  • the “foam size” is the size of pores formed in the foam, and the cross section of the foam is observed with a scanning electron microscope (SEM) to determine the area of the pores. Means the average diameter of the corresponding circles.
  • Thinness of one foamed foam coating is the thickness of the resin part between the pores formed in the foam, and the thickness of the resin part obtained by observing the cross section of the foam with SEM Mean value.
  • the density of the foam is preferably 6 kg / m 3 or more, and preferably 11 kg / m 3 or less.
  • the density can be measured according to JIS K6401.
  • the tensile strength of the foam is preferably 0.5 kg / cm 2 or more, preferably 2 kg / cm 2 or less.
  • the tensile strength can be measured according to JIS K 6301.
  • the elongation at break is preferably 8% or more, and preferably 20% or less.
  • the elongation at break can be measured according to JIS K6301.
  • the number of cells of the foam is preferably 80 or more, and preferably 300 or less.
  • the number of cells can be measured according to JIS K6402.
  • the expansion ratio of the foam is preferably 50% or more, and preferably 150% or less.
  • the expansion ratio can be determined by the ratio between the volume before foaming and the volume after foaming.
  • the hardness of the foam is preferably 8 kPa or more, and preferably less than 13 kPa.
  • the hardness can be determined by performing 70% pre-compression three times and measuring the hardness after 30 seconds with 40% compression in accordance with JIS K6401. Examples of the method of changing the hardness include a method of controlling the foaming rate and a method of compressing the foam by heating and pressing.
  • the residue it is preferable to wipe the residue using the wiping member in the presence of a solvent when removing the residue.
  • the residue may be swollen with the solvent.
  • Examples of the solvent include water and organic solvents. Among these, an organic solvent is preferable from the viewpoint of further improving the removability of the residue.
  • Examples of the organic solvent include alcohols such as ethanol; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; cellosolve, methyl cellosolve, butyl cellosolve, carbitol, and methylcarbitol.
  • Glycol ethers such as butyl carbitol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, tripropylene glycol monomethyl ether; ethyl acetate, butyl acetate, butyl lactate, cellosolve acetate, butyl cellosolve acetate, carbitol Acetate, butyl carbitol acetate, propylene glycol monomethyl ether acetate, dipropylene Recall monomethyl ether acetate, esters such as propylene carbonate; octane, aliphatic hydrocarbons decane; and petroleum ether, petroleum solvents such as naphtha.
  • esters such as propylene carbonate
  • octane aliphatic hydrocarbons decane
  • petroleum ether petroleum solvents such as naphtha.
  • the solvent is preferably alcohol, acetone, methyl ethyl ketone or ethyl acetate, and more preferably alcohol.
  • the structure is heated to a temperature higher than the glass transition temperature of the cured product layer, which is higher than the glass transition temperature of ⁇ 20 ° C., and the first electronic component, the second electronic component, The process of peeling may be provided.
  • the heating temperature is preferably the glass transition temperature Tg ° C.-20 ° C. or higher and Tg ° C. + 50 ° C. or lower of the cured product layer.
  • a method for manufacturing a regenerative electronic component according to the present invention includes curing the conductive material with the electrode-side surface facing between the first electronic component and the second electronic component, You may provide the process of bonding together the said 1st electronic component and the said 2nd electronic component with the said hardened
  • the regenerated electronic component obtained by the method for producing a regenerated electronic component according to the present invention is suitably used for obtaining various connection structures.
  • the electronic parts are not particularly limited. Specific examples of the electronic component include a semiconductor chip, a capacitor, a diode, a printed board, a flexible printed board, a glass epoxy board, and a glass board.
  • the conductive particles are not particularly limited as long as they have solder on the conductive surface.
  • Examples of the conductive particles include coated particles in which the surface of the base particle is coated with a conductive conductive layer, and particles having solder on the conductive surface, solder particles formed only by solder, and the like. Can be mentioned.
  • FIG. 3 is a cross-sectional view showing an example of conductive particles that can be used as a conductive material in the present invention.
  • the 3 includes a base particle 2 and a conductive layer 3 disposed on the surface of the base particle 2.
  • the conductive layer 3 covers the surface of the base particle 2.
  • the conductive particle 1 is a coated particle in which the surface of the base particle 2 is coated with the conductive layer 3.
  • the conductive layer 3 has a second conductive layer 3A and a solder layer 3B (first conductive layer) disposed on the surface of the second conductive layer 3A.
  • the conductive particle 1 includes a second conductive layer 3A between the base particle 2 and the solder layer 3B. Therefore, the conductive particles 1 include the base particle 2, the second conductive layer 3A disposed on the surface of the base particle 2, and the solder layer 3B disposed on the surface of the second conductive layer 3A. Is provided.
  • the conductive layer 3 may have a multilayer structure, or may have a laminated structure of two or more layers.
  • the conductive layer 3 in the conductive particle 1 has a two-layer structure.
  • the conductive particles 11 may have a solder layer 12 as a single conductive layer.
  • the conductive particles 11 include base material particles 2 and a solder layer 12 disposed on the surface of the base material particles 2.
  • the conductive particles 21 which are solder particles may be used as in another modification shown in FIG.
  • the conductive particles 21 are formed only by solder.
  • the conductive particles 21 do not have base particles in the core and are not core-shell particles.
  • both a center part and an outer surface are formed with the solder.
  • solder particles are preferably used in terms of excellent high-speed transmission, conduction resistance, mounting height, and the like.
  • FIG. 6 is a front cross-sectional view schematically showing a structure used in the method for manufacturing a regenerated electronic component according to one embodiment of the present invention.
  • a structure 51 shown in FIG. 6 includes a first electronic component 52, a second electronic component 53, a cured product layer 54 in which the first electronic component 52 and the second electronic component material 53 are bonded together. Is provided.
  • the cured product layer 54 is formed by curing a conductive material including the conductive particles 1 having solder on a conductive surface and a curable component.
  • the cured product layer 54 has a portion derived from the conductive particles 1 having solder on the conductive surface and a portion (cured product) derived from the curable component.
  • the first electronic component 52 has a plurality of first electrodes 52a on the surface (upper surface).
  • the second electronic component 53 has a plurality of second electrodes 53a on the surface (lower surface).
  • the first electronic component 52 and the second electronic component 53 are bonded together in a state where the surface on the first electrode 52a side and the surface on the second electrode 53a side face each other.
  • FIG. 7 is an enlarged front sectional view showing a connection portion between the conductive particles 1 and the first and second electrodes 52a and 53a in the structure 51 shown in FIG.
  • the melted solder layer portion 3Ba is in sufficient contact with the first and second electrodes 52a and 53a. That is, by using the conductive particles 1 whose surface layer is the solder layer 3B, compared to the case where the conductive particles whose surface layer is a metal such as nickel, gold or copper are used, the conductive particles The contact area between 1 and the first and second electrodes 52a and 53a is increased.
  • FIG. 8 is a front sectional view schematically showing a structure used in a method for manufacturing a regenerated electronic component according to another embodiment of the present invention.
  • connection structure 51 is configured in the same manner as the connection structure 51 except that the conductive particles 21 which are solder particles are used instead of the conductive particles 1.
  • the connection structure 51 ⁇ / b> X the plurality of conductive particles 21 illustrated in FIG. 5 are melted and then solidified, whereby the solder portion 21 ⁇ / b> X is formed.
  • the first electronic component and the second electronic component are separated, and as shown in FIG. 1, the first electronic component 52A after separation and the second electronic component after separation are separated.
  • An electronic component 53A is obtained.
  • a structure 51A may be used.
  • a residue 54A derived from the conductive material is present on the surface of the second electronic component 53A after peeling.
  • the residue 54A has a part (particularly solder) derived from conductive particles having solder on a conductive surface, and a part (cured product) derived from a curable component.
  • the residue 54A contains solder.
  • the first electronic component 52 and the second electronic component 53 are peeled off by heating the structure 51 to a temperature higher than the glass transition temperature of the cured product layer of ⁇ 20 ° C.
  • the residue 54A after peeling can be effectively reduced.
  • At least one of the electronic components after peeling is used among the first electronic component 52A after peeling and the second electronic component 53A after peeling.
  • the first electronic component 52A after peeling is used.
  • a residue 54A derived from the conductive material is present.
  • FIG. 2A when the residue 54A is removed, the first electronic component 52A after the separation where the residue 54A exists (even if the second electronic component 53A after the separation is present).
  • a wiping member 55 having an elastic modulus smaller than that of the first electrode 52a (which may be the second electrode 53a) is used.
  • the wiping member 55 is moved horizontally on the surface of the first electronic component 52A after peeling.
  • the wiping member 55 may be moved only in one direction.
  • FIG. 8 is a front cross-sectional view schematically showing an example of a connection structure using a recycled electronic component.
  • connection structure 61 (reproduction connection structure) can be obtained by connecting the reproduction electronic component 52 ⁇ / b> B and an arbitrary electronic component 62 by the connection portion 63.
  • the connection structure 61 includes a reproduction electronic component 52B having the first electrode 52a on the surface, an electronic component 62 having the electrode 62a on the surface, and a connection portion 63 that connects the reproduction electronic component 52B and the electronic component 62.
  • the connection part 63 is formed of a cured product of a conductive material containing conductive particles 63A and a curable component.
  • the conductive particles 63 ⁇ / b> A are configured by solidifying after melting the solder of conductive particles having solder on a conductive surface.
  • FIG. 10 is a front sectional view schematically showing another example of the connection structure using the regenerated electronic component.
  • connection structure 61 ⁇ / b> X can be obtained by connecting the regenerative electronic component 52 ⁇ / b> B and the arbitrary electronic component 62 by the connection portion 63 ⁇ / b> X including the solder portion 21 ⁇ / b> X.
  • the connection part 63X is formed by the hardened
  • the plurality of conductive particles 21 shown in FIG. 5 are melted and then solidified to form solder portions 21 ⁇ / b> X.
  • the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the substrate particles are preferably substrate particles excluding metal particles, and more preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles.
  • the substrate particles may be copper particles.
  • the base material particles are preferably resin particles formed of a resin.
  • electroconductive particle is compressed by crimping
  • the substrate particles are resin particles, the conductive particles are easily deformed during the pressure bonding, and the contact area between the conductive particles and the electrode is increased. For this reason, the conduction
  • the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; Alkylene terephthalate, polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, Polysulfone, polyphenylene oxide, polyacetal, polyimide, polyamid Imide, polyether ether ketone, polyether sulfone, divinyl benzene polymer, and diviny
  • polyolefin resins such as polyethylene, polypropylene,
  • the divinylbenzene copolymer examples include divinylbenzene-styrene copolymer and divinylbenzene- (meth) acrylic acid ester copolymer. Since the hardness of the resin particles can be easily controlled within a suitable range, the resin for forming the resin particles is a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. It is preferably a coalescence.
  • the substrate particles are inorganic particles or organic-inorganic hybrid particles excluding metal
  • examples of inorganic substances for forming the substrate particles include silica and carbon black.
  • the particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary.
  • grains obtained by performing are mentioned.
  • the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the substrate particles are metal particles
  • examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium.
  • the metal particles are preferably copper particles.
  • the melting point of the substrate particles is preferably higher than the melting point of the solder layer.
  • the melting point of the substrate particles is preferably higher than 160 ° C, more preferably higher than 300 ° C, still more preferably higher than 400 ° C, and particularly preferably higher than 450 ° C.
  • the melting point of the substrate particles may be less than 400 ° C.
  • the melting point of the substrate particles may be 160 ° C. or less.
  • the softening point of the substrate particles is preferably 260 ° C. or higher.
  • the softening point of the substrate particles may be less than 260 ° C.
  • the conductive particles may have a single solder layer.
  • the conductive particles may have a plurality of conductive layers (solder layer, second conductive layer). That is, in the conductive particles, two or more conductive layers may be stacked.
  • the solder is preferably a low melting point metal having a melting point of 450 ° C. or lower.
  • the solder layer is preferably a low melting point metal layer having a melting point of 450 ° C. or lower.
  • the low melting point metal layer is a layer containing a low melting point metal.
  • the solder particles are preferably low melting point metal particles having a melting point of 450 ° C. or lower.
  • the low melting point metal particles are particles containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
  • the solder layer and the solder particles preferably contain tin.
  • the tin content is preferably 30% by weight or more, more preferably 40% by weight or more, and even more preferably 70% by weight. Above, particularly preferably 90% by weight or more.
  • the content of tin in the solder layer and the solder particles is equal to or higher than the lower limit, the connection reliability between the conductive particles and the electrodes is further enhanced.
  • the melting point of the solder is preferably lower than the curing temperature of the resin (curable component).
  • the melting point of the solder and the curing temperature of the resin can be determined by measuring the peak temperature with a differential scanning calorimeter at a heating rate of 10 ° C./min and in a nitrogen atmosphere. Examples of the differential scanning calorimeter include “X-DSC7000” manufactured by Hitachi High-Tech Science Corporation.
  • the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
  • ICP-AES high-frequency inductively coupled plasma emission spectrometer
  • EDX-800HS fluorescent X-ray analyzer
  • the solder is melted and joined to the electrodes, and the solder conducts between the electrodes. For example, since the solder and the electrode are not in point contact but in surface contact, the connection resistance is lowered.
  • the use of conductive particles having solder on the conductive surface increases the bonding strength between the solder and the electrode. As a result, peeling between the solder and the electrode is further less likely to occur, and conduction reliability and connection reliability are improved. Effectively high.
  • the low melting point metal constituting the solder layer and the solder particles is not particularly limited.
  • the low melting point metal is preferably tin or an alloy containing tin.
  • the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode.
  • a tin-bismuth alloy or a tin-indium alloy is more preferable.
  • the material constituting the solder is preferably a filler material having a liquidus of 450 ° C. or lower based on JIS Z3001: Welding terms.
  • the composition of the solder include metal compositions containing components such as zinc, gold, silver, lead, copper, tin, bismuth, and indium. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder preferably does not contain lead, and is preferably a solder containing tin and indium or a solder containing tin and bismuth.
  • the solder layer and the solder particles are nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, Metals such as manganese, chromium, molybdenum, and palladium may be included.
  • the solder layer and the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc.
  • the content of these metals for increasing the bonding strength is 100 wt% of the solder layer or 100 wt% of the solder particles, preferably 0. 0.0001% by weight or more, preferably 1% by weight or less.
  • the melting point of the second conductive layer is preferably higher than the melting point of the solder layer.
  • the melting point of the second conductive layer is preferably above 160 ° C, more preferably above 300 ° C, even more preferably above 400 ° C, even more preferably above 450 ° C, particularly preferably above 500 ° C, most preferably Preferably it exceeds 600 degreeC. Since the solder layer has a low melting point, it melts during conductive connection.
  • the second conductive layer is preferably not melted at the time of conductive connection.
  • the conductive particles are preferably used after melting solder, preferably used after melting the solder layer, and used without melting the second conductive layer while melting the solder layer. It is preferred that Since the melting point of the second conductive layer is higher than the melting point of the solder layer, only the solder layer can be melted without melting the second conductive layer at the time of conductive connection.
  • the absolute value of the difference between the melting point of the solder layer and the melting point of the second conductive layer is preferably more than 0 ° C, more preferably 5 ° C or more, still more preferably 10 ° C or more, and further preferably 30 ° C. Above, particularly preferably 50 ° C. or higher, most preferably 100 ° C. or higher.
  • the second conductive layer preferably contains a metal.
  • the metal constituting the second conductive layer is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.
  • ITO tin-doped indium oxide
  • the second conductive layer is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer.
  • the conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer.
  • the thickness of the solder layer is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 10 ⁇ m or less, more preferably 1 ⁇ m or less, and even more preferably 0.3 ⁇ m or less.
  • the thickness of the solder layer is not less than the above lower limit and not more than the above upper limit, sufficient conductivity is obtained, and the conductive particles do not become too hard, and the conductive particles are sufficiently deformed when connecting the electrodes. .
  • the thickness of the second conductive layer is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 10 ⁇ m or less, more preferably 1 ⁇ m or less, and still more preferably 0.3 ⁇ m or less.
  • the thickness of the second conductive layer is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes is further reduced.
  • the average particle diameter of the conductive particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, still more preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 30 ⁇ m or less, still more preferably 20 ⁇ m. Hereinafter, it is particularly preferably 15 ⁇ m or less, most preferably 10 ⁇ m or less.
  • the average particle diameter of the conductive particles is particularly preferably 3 ⁇ m or more and 30 ⁇ m or less.
  • the “average particle size” of the conductive particles indicates a number average particle size.
  • the average particle diameter of the conductive particles is obtained, for example, by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
  • the content of the conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, most preferably. It is 30% by weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
  • content of the conductive particles is not less than the above lower limit and not more than the above upper limit, it is easy to arrange many conductive particles between the electrodes, and the conduction reliability is further enhanced.
  • the conductive material preferably includes a thermosetting component.
  • the thermosetting component preferably contains a thermosetting compound and a thermosetting agent.
  • thermosetting compound examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • thermosetting agent examples include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator.
  • an imidazole curing agent, a polythiol curing agent, or an amine curing agent is preferable because the conductive material can be cured more rapidly at a low temperature.
  • a latent curing agent is preferable since a storage stability becomes high when the curable compound curable by heating and the thermosetting agent are mixed.
  • the latent curing agent is preferably a latent imidazole curing agent, a latent polythiol curing agent or a latent amine curing agent.
  • the said thermosetting agent may be coat
  • the content of the thermosetting component in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting component is large.
  • the content of the thermosetting agent is not particularly limited.
  • the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less.
  • the content of the thermosetting agent is not less than the above lower limit, it is easy to sufficiently cure the conductive material.
  • the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
  • the conductive material preferably contains a filler.
  • the filler examples include silica, aluminum nitride, alumina, glass, boron nitride, silicon nitride, silicone, carbon, graphite, graphene, polyimide, polyamide and talc.
  • the said filler only 1 type may be used and 2 or more types may be used together.
  • the connection resistance of the connection structure using the regenerated electronic component can be effectively reduced by effectively removing the filler residue.
  • the conductive material preferably contains a flux.
  • the flux is not particularly limited.
  • a flux generally used for soldering or the like can be used.
  • the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Is mentioned.
  • As for the said flux only 1 type may be used and 2 or more types may be used together.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably an organic acid having two or more carboxyl groups or pine resin.
  • the flux may be an organic acid having two or more carboxyl groups, or pine resin. Use of an organic acid having two or more carboxyl groups or pine resin further increases the reliability of conduction between the electrodes.
  • the above rosins are rosins whose main component is abietic acid.
  • the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
  • the flux may be dispersed in the conductive material or may be adhered on the surface of the conductive particles or solder particles.
  • the content of the flux is 0% by weight (not contained) or more, preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
  • the conductive material may not contain flux.
  • the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
  • the conductive material may be, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant as necessary.
  • various additives such as an antistatic agent and a flame retardant may be included.
  • Divinylbenzene resin particles (“Micropearl SP-210” manufactured by Sekisui Chemical Co., Ltd., average particle diameter 10 ⁇ m, softening point 330 ° C.) are electroless nickel plated, and the base nickel plating is 0.1 ⁇ m thick on the surface of the resin particles. A layer was formed. Next, the resin particles on which the base nickel plating layer was formed were subjected to electrolytic copper plating to form a 1 ⁇ m thick copper layer. Further, electrolytic plating was performed using an electrolytic plating solution containing tin and bismuth to form a 2 ⁇ m thick solder layer.
  • Conductive particles A (average particle size 16 ⁇ m, resin core solder-coated particles, solder elastic modulus at 30 ° C., 35 MPa, solder yield elastic modulus at 30 ° C., 35 MPa) were prepared.
  • conductive material A 15 parts by weight of an epoxy group-containing polymer (NOF "CP-30"), 5 parts by weight of a CTBN-modified epoxy resin (ADEKA “PR-4023”), resorcin diglycidyl ether (manufactured by Nagase ChemteX) EX-201 ”) 20 parts by weight, anionic curing agent (imidazole compound microcapsule," Novacure HX3921HP “manufactured by Asahi Kasei E-materials), and epoxy group-containing silane coupling agent (adhesion imparting agent, Shin-Etsu Chemical) 1 part by weight of “KBE-403” manufactured by the company, 2 parts by weight of flux (“glutaric acid” manufactured by Wako Pure Chemical Industries, Ltd.), 1 part by weight of filler (nanosilica, “MT-10” manufactured by Tokuyama) Conductive material A was obtained by mixing 15 parts by weight of conductive particles A.
  • an epoxy group-containing polymer NOF "CP-30”
  • the obtained conductive materials A to C were heated to 185 ° C. and sufficiently cured to obtain a cured product.
  • a viscoelasticity measuring device (“DVA-200” manufactured by IT Measurement & Control Co., Ltd.), heating from room temperature (23 ° C.) at a heating rate of 5 ° C./min, under conditions of a deformation rate of 0.1% and 10 Hz, The obtained cured product was measured for elastic modulus at 30 ° C. and glass transition temperature Tg1.
  • Example 1 Fabrication of structure X For electrical conductivity evaluation A glass epoxy substrate (FR-4 substrate) having a Cu electrode pattern (thickness 10 ⁇ m) plated on gold on the surface having an L / S of 100 ⁇ m / 100 ⁇ m was prepared. Moreover, the flexible printed circuit board which has Cu electrode pattern (thickness 10 micrometers) plated with gold on the surface whose L / S is 100 micrometers / 100 micrometers was prepared.
  • the overlapping area of the glass epoxy substrate and the flexible printed board was 1.4 cm ⁇ 3 mm, and the number of connected electrodes was 70 pairs.
  • the conductive material immediately after fabrication (conductive material A in Example 1) was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 150 ⁇ m, thereby forming an anisotropic conductive material layer.
  • the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive material layer so that the electrodes face each other.
  • a pressure heating head is placed on the upper surface of the semiconductor chip and a pressure of 2.0 MPa is applied to melt the solder.
  • the anisotropic conductive material layer was hardened at 185 degreeC, and the structure X was obtained.
  • a structure Y for insulation evaluation was obtained in the same manner as the production of the structure X for conductivity evaluation.
  • the obtained structures X and Y were heated to 100 ° C., and the flexible printed board was peeled off.
  • the cured conductive material remaining on the electrode of the glass epoxy substrate is a melamine sponge (hardness: 8 kPa) soaked with ethanol (elasticity 7 PGa at 30 ° C. when cured non-foamed melamine resin). Then, it was removed by rubbing at 30 ° C. in the direction parallel to the electrode.
  • the glass epoxy substrate and the flexible printed circuit board were joined in the same manner as the manufacturing method of the structures X and Y to obtain the regenerative connection structures X2 and Y2.
  • the conductive material used at the time of manufacturing the pre-reproduction structure was used (conductive material A in Example 1).
  • Example 2 A recycled electronic component was manufactured in the same manner as in Example 1 except that the type of foam, the type of electrode, and the type of solvent were changed as shown in Table 1 below.
  • Example 7 to 12 Structures X and Y, regenerated in the same manner as in Example 1 except that the conductive material B was used and the type of foam, the type of electrode, and the type of solvent were changed as shown in Table 2 below. Electronic parts and regenerative connection structures X2 and Y2 were manufactured.
  • Example 13 to 18 Structures X, Y, and regenerated in the same manner as in Example 1 except that the conductive material C was used and the type of foam, the type of electrode, and the type of solvent were changed as shown in Table 3 below. Electronic parts and regenerative connection structures X2 and Y2 were manufactured.
  • Example 1 except that the conductive material B was used, the hardness of the melamine sponge was changed, and the type of foam, the type of electrode, and the type of solvent were changed as shown in Table 2 below.
  • Table 2 the structures X and Y, the regenerated electronic parts, and the regenerative connection structures X2 and Y2 were manufactured.
  • Comparative Example 2 Structures X and Y, recycled electronic components, and recycled connection structures X2 and Y2 were manufactured in the same manner as in Example 1 except that bamboo skewers were used as the wiping members.
  • ⁇ Average value of connection resistance is 8.0 ⁇ or less ⁇ : Average value of connection resistance exceeds 8.0 ⁇ and 10.0 ⁇ or less ⁇ : Average value of connection resistance exceeds 10.0 ⁇ and 15.0 ⁇ or less ⁇ Average connection resistance exceeds 15.0 ⁇

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JPWO2015064440A1 (ja) 2017-03-09
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