WO2015058523A1 - 柔性基板制备方法 - Google Patents
柔性基板制备方法 Download PDFInfo
- Publication number
- WO2015058523A1 WO2015058523A1 PCT/CN2014/078459 CN2014078459W WO2015058523A1 WO 2015058523 A1 WO2015058523 A1 WO 2015058523A1 CN 2014078459 W CN2014078459 W CN 2014078459W WO 2015058523 A1 WO2015058523 A1 WO 2015058523A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flexible substrate
- sacrificial layer
- cutting line
- substrate
- hole
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000005022 packaging material Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 59
- 239000007789 gas Substances 0.000 description 18
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 poly(p-phenylene) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- Embodiments of the invention relate to a method of making a flexible substrate. Background technique
- the flexible display device is a display device formed based on a flexible substrate material. Since the flexible display device has the characteristics of being curlable, wide viewing angle, and easy to carry, the flexible display device has broad application prospects and good market potential in portable products and most display applications.
- a rigid substrate is used, and the various component layers in the flexible display device are sequentially formed on a rigid substrate. Then, the formed flexible display device is peeled off from the rigid substrate by a lift-off process, thereby completing the preparation work of the flexible display device.
- the purpose of separating the flexible display device from the rigid substrate is usually achieved by means of adhesive bonding or mechanical force pulling.
- the separation of the flexible display device by the adhesive bonding method requires the removal of the adhesive subsequently; and the separation of the flexible display device by the mechanical force traction method requires the design of precise control equipment, which increases the complexity of the separation process. It is not conducive to improving the production efficiency of the flexible display device. Summary of the invention
- Embodiments of the present invention provide a method of preparing a flexible substrate.
- the method includes: forming a sacrificial layer on a rigid substrate; preparing a flexible substrate on the rigid substrate on which the sacrificial layer is formed, wherein an adhesion force between the flexible substrate and the sacrificial layer is smaller than the flexible substrate An adhesive force between the rigid substrates; cutting the flexible substrate in a region where the sacrificial layer is located to form a cutting line, the cutting line being a closed cutting line that is connected end to end and the cutting line is cut deep enough a sacrificial layer; forming a hole in the flexible substrate outside the closed cutting line, injecting a gas into the hole; sealing the hole and the cutting line with a sealing material, the sacrificial layer and the
- the rigid substrate of the flexible substrate is placed in a low pressure environment; and is injected into the hole using a low pressure environment A difference in air pressure generated between the gases separates the flexible substrate surrounded by the closed cutting line from
- the area of the sacrificial layer is smaller than the area of the rigid substrate.
- the flexible substrate area is larger than the area of the sacrificial layer and completely covers the sacrificial layer.
- the step of preparing a flexible substrate on a rigid substrate formed with a sacrificial layer includes: forming a flexible substrate on the rigid substrate on which the sacrificial layer is formed, and preparing a display element layer on the flexible substrate .
- the cut line and the hole are both formed in a region of the flexible substrate corresponding to an edge of the sacrificial layer.
- the vacuum of the low pressure environment is not more than 0.3 KPa.
- the method further includes: removing the encapsulating material remaining on the flexible substrate after the peeling is completed.
- the thickness of the sacrificial layer is not more than 1 ⁇ m.
- the longest distance between the hole and the closed cutting line is no more than 5 cm.
- the opening of the hole has a rectangular shape, a square shape, a circular shape, a triangular shape or a cross shape.
- the injected gas is pressurized while injecting gas into the hole.
- FIG. 1 is a schematic flow chart of a method for preparing a flexible substrate according to an embodiment of the invention.
- FIGS. 2a to 2f are schematic cross-sectional views showing a method of fabricating a flexible substrate according to an embodiment of the present invention. detailed description
- Embodiments of the present invention provide a method for preparing a flexible substrate, which separates a flexible substrate from a rigid substrate by a pressure difference generated by a gas, thereby solving the problem that the flexible substrate and the rigid substrate are difficult to separate.
- Embodiments of the present invention provide a method for preparing a flexible substrate. As shown in FIG. 1, the method includes: Step S101: forming a sacrificial layer on a rigid substrate.
- a sacrificial layer 2 is first formed on the rigid substrate 1 by a patterning process such as masking, exposure, etching, and photoresist removal.
- the area of the sacrificial layer 2 is smaller than the area of the rigid substrate 1.
- the material of the rigid substrate 1 may be ceramic material, quartz glass material or the like.
- the material of the sacrificial layer 2 may be any one or more of poly(p-phenylene) or a fluorine-containing polymer.
- the thickness of the sacrificial layer 2 formed is not more than 1 ⁇ m.
- Step S102 preparing a flexible substrate on a rigid substrate formed with a sacrificial layer; an adhesion force between the flexible substrate and the sacrificial layer is smaller than an adhesion force between the flexible substrate and the rigid substrate.
- the flexible substrate 3 is continuously prepared on the rigid substrate 1 in which the above step S101 is completed.
- the area of the flexible substrate 3 is larger than the area of the sacrificial layer 2 and completely covers the sacrificial layer 2.
- the flexible substrate 3 has strong adhesion to the rigid substrate 1, and the flexible substrate 3 and the sacrificial layer 2 have weak adhesion. Therefore, it can be obtained that the adhesion between the flexible substrate 3 and the sacrificial layer 2 is smaller than the adhesion between the flexible substrate 3 and the rigid substrate 1.
- the flexible substrate 3 Since the adhesion between the flexible substrate 3 and the sacrificial layer 2 is smaller than the adhesion between the flexible substrate 3 and the rigid substrate 1, the flexible substrate 3 can be easily and conveniently separated from the rigid substrate 1 in a subsequent step.
- the adhesion between the flexible substrate 3 and the sacrificial layer 2 can be made smaller than the adhesion between the flexible substrate 3 and the rigid substrate 1 in various ways, which is not limited by the embodiment of the present invention.
- the selection is such that the adhesion between the flexible substrate 3 and the sacrificial layer 2 is smaller than the adhesion between the flexible substrate 3 and the rigid substrate 1.
- an adhesive layer may be provided between the rigid substrate 1 and the flexible substrate 3, and no adhesive layer may be provided between the sacrifice layer 2 and the flexible substrate 3.
- an adhesive layer having a large viscosity may be provided between the rigid substrate 1 and the flexible substrate 3, and an adhesive layer having a small viscosity may be provided between the sacrificial layer 2 and the flexible substrate 3.
- the flexible substrate may be a flexible display substrate; however, embodiments of the present invention are not limited thereto, and the flexible substrate may be other types of flexible substrates.
- the element layers of the formed flexible substrate are also different depending on the type and configuration of the flexible substrate.
- the step of preparing a flexible substrate on a rigid substrate formed with a sacrificial layer comprises: forming a flexible substrate 31 on the rigid substrate 1 on which the sacrificial layer 2 is formed, and preparing each display element layer such as an array layer on the flexible substrate 31 32 (for example, including a gate layer, an insulating layer, a source/drain layer, a passivation layer, and the like provided on a flexible substrate) and a light-emitting layer, an encapsulation layer, a protective layer, and the like.
- each display element layer such as an array layer on the flexible substrate 31 32 (for example, including a gate layer, an insulating layer, a source/drain layer, a passivation layer, and the like provided on a flexible substrate) and a light-emitting layer, an encapsulation layer, a protective layer, and the like.
- Step S103 cutting the flexible substrate in the region where the sacrificial layer is located to form a cutting line, the cutting line being a closed cutting line that is connected end to end and the cutting line is cut deep to the sacrificial layer.
- the cutting work of the flexible substrate is performed on the rigid substrate on which the above step S102 is completed.
- the blade a and the blade b respectively indicate the cutting position of the cutting line.
- a cutting line is formed on the flexible substrate in the region where the sacrificial layer is located, the cutting lines are joined end to end to form a closed cutting line, and the cutting line is cut deep to the sacrificial layer.
- the closed cut line surrounds and identifies the flexible substrate area to be stripped.
- the flexible substrate when the condition that the cutting line is deep to the sacrificial layer is satisfied, for the flexible substrate surrounded by the closed cutting line, the flexible substrate has a weak adhesion force only on the contact surface with the sacrificial layer, and the flexibility The connection of the substrate to other structures (e.g., rigid substrate 1) has been severed. Therefore, in the subsequent step, the flexible substrate can be separated from the sacrificial layer contact surface with only a small external force, and in other words, the flexible substrate is successfully separated from the rigid substrate.
- Step S104 forming a hole in the flexible substrate outside the closed cutting line, and injecting a gas into the hole.
- a hole 4 is formed in the flexible substrate 3 outside the closed cutting line.
- a hole 4 is formed on the flexible substrate 3 outside the cutting line by laser etching; or, a hole 4 is formed in the flexible substrate 3 outside the cutting line by a hard metal blunt.
- the formed holes 4 and the cut lines formed in the foregoing steps are all formed in the region of the edge of the flexible substrate 3 corresponding to the sacrificial layer 2.
- the longest distance between the hole and the cutting line is no more than 5 cm.
- the opening of the hole is rectangular, square, circular, triangular or cross.
- a plurality of holes may be formed on the outer side of the closed cutting line so that the subsequent steps make the flexible substrate and the rigid substrate peeling process easier, and are not mentioned here.
- gas is injected into the holes 4.
- the injected gas can be dry air or other inert gas.
- the injected gas can be appropriately pressurized when the gas is injected, so that the pressure difference is increased in the subsequent step, and the success rate of the peeling of the flexible substrate from the rigid substrate is improved.
- Step S105 sealing the hole and the cutting line with the encapsulating material, placing the rigid substrate formed with the sacrificial layer and the flexible substrate in a low pressure environment; closing the cutting line by using a pressure difference between the low pressure environment and the gas injected into the hole
- the surrounding flexible substrate ie, the flexible substrate inside the closed cutting line
- the hole 4 and the cut line are sealed by the encapsulating material 5.
- the encapsulating material 5 may include a rubber material, an organic resin material, a silicon-containing cured material, or the like.
- the encapsulating action of the encapsulating material can be accomplished by various means such as ultraviolet curing, heat curing, adhesive curing, natural curing, and the like.
- the gas injected into the holes 4 formed in the above step S104 is sealed (for example, the sealed gas is a pressurized gas).
- the rigid substrate on which the sacrificial layer and the flexible substrate are formed is placed in a low-pressure environment.
- the rigid substrate and the flexible substrate which have completed the above steps are placed in the vacuum chamber 6, and a vacuum is taken.
- a vacuum is drawn so that the vacuum of the low pressure environment in which the flexible substrate to be peeled is placed is not more than 0.3 KPa.
- the flexible substrate surrounded by the closed cutting line is separated from the sacrificial layer.
- the flexible substrate surrounded by the closed cutting line has only a weak adhesion force with the sacrificial layer, and the difference in pressure between the injected gas and the low-pressure environment in the hole can overcome the weak Then force.
- the flexible substrate surrounded by the closed cutting line is separated from the sacrificial layer.
- the sacrificial layer is formed on a rigid substrate, that is, the flexible substrate and The rigid substrate is separated.
- the flexible substrate preparing method provided by the embodiment of the present invention as described above, the effect of peeling off the flexible substrate surrounded by the closed cutting line from the rigid substrate is achieved.
- This peeling process utilizes a difference in air pressure to perform a peeling operation.
- the flexible substrate preparation method provided by the embodiments of the present invention is simple and easy to operate, and can effectively avoid damage to the flexible substrate during the stripping process, and can effectively improve the flexible substrate, compared with the commonly used method of adhesive bonding or mechanical force traction. Production efficiency.
- the method for preparing a flexible substrate provided by the embodiment of the present invention further includes: Step S106: removing the remaining packaging material on the flexible substrate after the peeling is completed.
- step S105 the flexible substrate and the rigid substrate have been successfully separated.
- the encapsulating material used in the previous process may remain on the flexible substrate after the stripping is completed, so in order to further improve the performance of the flexible substrate, it is necessary to remove the residual encapsulating material.
- the method of removing the residual packaging material differs depending on the packaging material selected. For example, it is possible to first perform heat reduction or ultraviolet irradiation to reduce viscosity, and then remove it by mechanical force.
- this step should also include removing the residual sacrificial layer material, which will not be described herein.
- the flexible substrate preparation method provided by the embodiment of the present invention firstly forms a hole on the outer side of the closed cutting line and injects a gas into the hole, and then seals the hole and the cutting line and extracts a vacuum, and uses a vacuum to inject a gas into the hole.
- the air pressure is poor, thereby separating the flexible substrate from the rigid substrate.
- the flexible substrate preparation method provided by the embodiment of the invention is simple and easy to operate, and can effectively avoid damage to the flexible substrate during the stripping process, and can effectively improve the production efficiency of the flexible substrate.
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Abstract
一种柔性基板制备方法,包括:在刚性基板(1)上形成牺牲层(2);在形成有所述牺牲层(2)的所述刚性基底(1)上制备柔性基板(3),其中所述柔性基板(3)与所述牺牲层(2)之间的接着力小于所述柔性基板(3)与所述刚性基底(1)之间的接着力;在所述牺牲层(2)所在区域内对所述柔性基板(3)进行切割以形成切割线,所述切割线为首尾相接的闭合切割线且所述切割线切割深至所述牺牲层(2);在闭合切割线外侧的所述柔性基板(3)上形成孔洞(4),向所述孔洞(4)内注入气体;利用封装材料(5)将所述孔洞(4)以及所述切割线密封,将形成有所述牺牲层(2)以及所述柔性基板(3)的所述刚性基底(1)置于低压环境;利用低压环境与所述孔洞(4)内注入气体之间产生的气压差,将闭合切割线围绕的所述柔性基板(3)与所述刚性基底(1)剥离开。该方法利用真空与孔洞(4)内注入气体之间的气压差,可简单、方便地将柔性基板(3)与刚性基底(1)剥离开。
Description
性基板制备方法 技术领域
本发明的实施例涉及一种柔性基板制备方法。 背景技术
柔性显示装置是一种基于柔性基底材料制作形成的显示装置。 由于柔性 显示装置具有可卷曲、 宽视角、 便于携带等特点, 因此在便携产品、 大多数 显示应用领域柔性显示装置具有广阔的应用前景以及良好的市场潜力。
然而, 对于柔性显示装置而言, 其制备过程中极易发生褶皱、 变形、 偏 移等问题。 通常, 会釆用刚性基底, 在刚性基底上依次制备形成柔性显示装 置中的各元件层。 然后通过剥离工艺, 将形成的柔性显示装置从刚性基底剥 离开来, 从而完成柔性显示装置的制备工作。
在实现上述将柔性显示装置从刚性基底分离的过程中, 发明人发现至少 存在如下问题。 通常利用黏胶粘贴或机械力牵引的方式来实现将柔性显示装 置从刚性基底上分离的目的。 然而, 利用黏胶粘贴方式分离柔性显示装置, 后续还需要去除黏胶; 而利用机械力牵引方法分离柔性显示装置, 则需要为 此设计精密的控制设备, 这均增加了分离工序的复杂程度, 不利于提高柔性 显示装置的生产效率。 发明内容
本发明的实施例提供一种柔性基板制备方法。 该方法包括: 在刚性基底 上形成牺牲层; 在形成有所述牺牲层的所述刚性基底上制备柔性基板, 其中 所述柔性基板与所述牺牲层之间的接着力小于所述柔性基板与所述刚性基底 之间的接着力; 在所述牺牲层所在区域内对所述柔性基板进行切割以形成切 割线, 所述切割线为首尾相接的闭合切割线且所述切割线切割深至所述牺牲 层;在闭合切割线外侧的所述柔性基板上形成孔洞,向所述孔洞内注入气体; 利用封装材料将所述孔洞以及所述切割线密封, 将形成有所述牺牲层以及所 述柔性基板的所述刚性基底置于低压环境; 利用低压环境与所述孔洞内注入
气体之间产生的气压差, 将闭合切割线围绕的所述柔性基板与所述刚性基底 剥离开。
例如, 所述牺牲层的面积小于所述刚性基底的面积。
例如,所述柔性基板面积大于所述牺牲层的面积且完全覆盖所述牺牲层。 例如, 所述在形成有牺牲层的刚性基底上制备柔性基板的步骤包括: 在 形成有所述牺牲层的所述刚性基底上形成柔性衬底, 并在所述柔性衬底上制 备显示元件层。
例如, 所述切割线和所述孔洞均形成在所述柔性基板的对应所述牺牲层 边缘的区域。
例如, 所述低压环境的真空度不大于 0.3KPa。
例如, 在将闭合切割线围绕的柔性基板与刚性基底剥离开之后, 所述方 法还包括: 去除剥离完成后的所述柔性基板上残留的所述封装材料。
例如, 所述牺牲层的厚度不大于 1 μ πι。
例如, 所述孔洞与闭合切割线之间的最长距离不大于 5cm。
例如, 所述孔洞的开口呈长方形、 正方形、 圓形、 三角形或十字形。 例如, 在向所述孔洞内注入气体的同时对注入的气体进行加压。 附图说明
为了更清楚地说明本发明实施例的技术方案, 下面将对实施例的附图作 简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例, 而非对本发明的限制。
图 1为根据本发明实施例的柔性基板制备方法的流程示意图。
图 2a至图 2f为根据本发明实施例的柔性基板制备方法的截面示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚, 下面将结合本发 明实施例的附图, 对本发明实施例的技术方案进行清楚、 完整地描述。显然, 所描述的实施例是本发明的一部分实施例, 而不是全部的实施例。 基于所描 述的本发明的实施例, 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例, 都属于本发明保护的范围。
本发明实施例提供一种柔性基板制备方法, 藉由气体产生的压力差, 将 柔性基板与刚性基底剥离开, 从而解决了柔性基板与刚性基底分离困难的问 题。
以下描述中, 为了说明而不是为了限定, 提出了诸如特定系统结构、 接 口、 技术之类的具体细节, 以便透切理解本发明的实施例。 然而, 本领域的 技术人员应当清楚, 本发明的其它实施例中可以没有这些具体细节。 在某些 情况中, 省略对众所周知的装置、 电路以及方法的详细说明, 以免不必要的 细节妨碍本发明实施例的描述。
本发明实施例提供了一种柔性基板制备方法。如图 1所示,该方法包括: 步骤 S101 : 在刚性基底上形成牺牲层。
例如, 如图 2a所示, 首先通过一次构图工艺经掩膜、 曝光、 刻蚀和光刻 胶去除等工艺步骤在刚性基底 1上形成一层牺牲层 2。 例如, 牺牲层 2的面 积小于刚性基底 1的面积。需要说明的是,刚性基底 1的材质可为陶瓷材质、 石英玻璃材质等等。 牺牲层 2的材质可为聚对二曱苯或含氟类聚合物中的任 意一种或几种。 例如, 形成的牺牲层 2的厚度不大于 1 μ πι。
步骤 S102: 在形成有牺牲层的刚性基底上制备柔性基板; 柔性基板与牺 牲层之间的接着力小于柔性基板与刚性基底之间的接着力。
例如, 如图 2b所示, 在完成上述步骤 S101的刚性基底 1上, 继续制备 柔性基板 3。 例如, 柔性基板 3的面积大于牺牲层 2的面积且完全覆盖牺牲 层 2。柔性基板 3与刚性基底 1之间具有强接着性,而柔性基板 3与牺牲层 2 之间具有弱接着性。 因此可以得到, 柔性基板 3与牺牲层 2之间的接着力小 于柔性基板 3与刚性基底 1之间的接着力。
由于柔性基板 3与刚性基底 1之间有强的接着力, 因此可以防止柔性基 板 3在制备过程中发生褶皱、 变形、 偏移等问题。
由于柔性基板 3与牺牲层 2之间的接着力小于柔性基板 3与刚性基底 1 之间的接着力, 因此在后续步骤中可以简单、 方便地将柔性基板 3与刚性基 底 1分离。
需要说明的是, 可以通过多种方式使柔性基板 3与牺牲层 2之间的接着 力小于柔性基板 3与刚性基底 1之间的接着力, 本发明的实施例对此不进行 限制。 例如, 可以对形成刚性基底 1的材料与形成牺牲层 2的材料进行适当
的选择, 以使柔性基板 3与牺牲层 2之间的接着力小于柔性基板 3与刚性基 底 1之间的接着力。 例如, 可以在刚性基底 1与柔性基板 3之间设置黏着层 而在牺牲层 2与柔性基板 3之间不设置黏着层。 例如, 可以在刚性基底 1与 柔性基板 3之间设置黏性大的黏着层而在牺牲层 2与柔性基板 3之间设置黏 性小的黏着层。
需要说明的是, 柔性基板可以为柔性的显示基板; 然而, 本发明的实施 例不限于此, 柔性基板可以为其他类型具有柔性的基板。 根据柔性基板类型 及构造的不同, 制备形成的柔性基板的各元件层也不相同。 例如: 在形成有 牺牲层的刚性基底上制备柔性基板的步骤包括: 在形成有牺牲层 2的刚性基 底 1上形成柔性衬底 31, 并在柔性衬底 31上制备各显示元件层例如阵列层 32 (例如, 包括设置在柔性衬底上的栅极层、 绝缘层、 源漏极层、 钝化层等) 以及发光层、 封装层、 保护层等等。
步骤 S103: 在牺牲层所在区域内对柔性基板进行切割以形成切割线, 切 割线为首尾相接的闭合切割线且切割线切割深至牺牲层。
例如, 如图 2c所示, 在完成上述步骤 S102的刚性基底上, 进行柔性基 板的切割工作。 图 2c中刀片 a、 刀片 b分别表示了切割线的切割位置。 在牺 牲层所在区域内的柔性基板上形成切割线, 切割线首尾相接形成一闭合切割 线, 且切割线切割深至牺牲层。 因此, 闭合切割线围绕并标识出了待剥离的 柔性基板区域。 需要说明的是, 当满足切割线深至牺牲层的条件时, 对于闭 合切割线围绕的柔性基板而言, 该柔性基板仅在与牺牲层的接触面上还存在 着弱接着力, 而该柔性基板与其它结构 (例如, 刚性衬底 1 ) 的连接已被切 断。 因此, 在后续步骤中, 只需要微小的外力就可将该柔性基板与牺牲层接 触面进行分离, 换句话说,也就成功的将该柔性基板与刚性基底进行了分离。
步骤 S104: 在闭合切割线外侧的柔性基板上形成孔洞, 向孔洞内注入气 体。
例如, 如图 2d所示, 在完成上述步骤 S103的刚性基底 1上, 在闭合切 割线外侧的柔性基板 3上形成孔洞 4。 有多种形成孔洞的方式, 例如: 利用 激光刻蚀在切割线外侧的柔性基板 3上形成孔洞 4; 又或者, 利用坚硬的金 属钝器在切割线外侧的柔性基板 3上形成孔洞 4。 例如, 形成的孔洞 4以及 前述步骤中形成的切割线均形成在柔性基板 3的对应牺牲层 2边缘的区域内。
例如, 孔洞与切割线之间的最长距离不大于 5cm。 例如, 孔洞的开口呈 长方形、 正方形、 圓形、 三角形或十字形。 另外, 可在闭合切割线的外侧形 成多个孔洞, 以便后续步骤使得柔性基板与刚性基底剥离过程更加容易, 在 此不做赞述。
进一步的, 在形成孔洞 4后, 向孔洞 4内注入气体。 注入的气体可为干 燥空气或者其它惰性气体。 此外, 在注入气体时可对注入的气体进行适当加 压, 以便在后续步骤增加气压差, 提高柔性基板与刚性基底剥离的成功率。
步骤 S105: 利用封装材料将孔洞以及切割线密封, 将形成有牺牲层以及 柔性基板的刚性基底置于低压环境; 利用低压环境与所述孔洞内注入气体之 间产生的气压差, 将闭合切割线围绕的所述柔性基板(即, 闭合切割线内侧 的所述柔性基板 )与所述刚性基底剥离开。
例如, 如图 2e所示, 在完成上述步骤 S104的刚性基底 1上, 利用封装 材料 5将孔洞 4以及切割线密封。 封装材料 5可包括橡胶材料、 有机树脂材 料、 含硅的固化材料等等。 进一步的, 在将封装材料涂覆在孔洞以及切割线 的表面之后, 可利用例如紫外线固化、 加热固化、 粘结剂固化、 自然固化等 多种方式完成封装材料的封装动作。 需要说明的是, 在利用封装材料将孔洞 以及切割线封住之后, 上述步骤 S104中往形成的孔洞 4里注入的气体便被 密封起来了 (例如, 密封了的气体是加压气体) 。
进一步的, 例如, 如图 2f所示, 在利用封装材料 4将孔洞 5以及切割线 封住之后, 将形成有牺牲层以及柔性基板的刚性基底置于低压环境的步骤。 举例来说, 将完成上述步骤的刚性基底以及柔性基板置入真空室 6中, 并抽 取真空。 例如, 抽取真空以使待剥离的柔性基板所处低压环境的真空度不大 于 0.3KPa。
需要说明的是, 随着真空室中真空度的增加, 密封孔洞中注入的气体与 低压环境产生的气压差会随着增大, 该气压差会产生如图 2f箭头所示的力, 以驱使闭合切割线所围绕的柔性基板与牺牲层分离。 需要说明的是, 由于步 骤 S103 形成切割线的切割动作, 闭合切割线围绕的柔性基板仅与牺牲层存 在着弱接着力, 而利用孔洞内注入气体与低压环境之间的气压差可克服该弱 接着力。 因而, 在本步骤完成后, 闭合切割线围绕的柔性基板便与牺牲层分 离开来。 事实上, 由于牺牲层是形成在刚性基底上的, 也就是说柔性基板与
刚性基底发生了分离。
至此, 通过如上描述的本发明实施例提供的柔性基板制备方法, 达到了 将闭合切割线围绕的柔性基板与刚性基底剥离开的效果。 该剥离过程利用了 气压差进行剥离动作。 相对于通常使用的黏胶粘贴或机械力牵引的方式, 本 发明实施例提供的柔性基板制备方法简单易操作, 而且剥离过程中能够有效 的避免对柔性基板造成损伤, 可以有效的提高柔性基板的生产效率。
进一步的,如图 1所示,本发明实施例提供的柔性基板制备方法还包括: 步骤 S106: 去除剥离完成后的柔性基板上残留的封装材料。
例如, 完成步骤 S105后, 柔性基板与刚性基底已成功分离。 然而, 剥 离完成后的柔性基板上可能还残留有前续工艺中使用的封装材料, 因此为进 一步提高柔性基板的性能, 需要去除残留的封装材料。
需要说明的是, 去除残留封装材料的方法依据所选用封装材料的不同而 有所不同。 例如, 可以首先进行加热减黏或紫外照射减黏等,再用机械力将 其去除。
另外, 需要补充说明的是, 在完成步骤 S105后, 若柔性基板上还残留 有牺牲层材料的话,本步骤还应包括去除残留的牺牲层材料,在此不做赘述。
本发明实施例提供的柔性基板制备方法, 首先在闭合切割线的外侧制备 形成孔洞并向孔洞内注入气体, 然后将孔洞以及切割线封住并抽取真空, 利 用真空与孔洞内注入气体之间的气压差,从而将柔性基板与刚性基底剥离开。 本发明实施例提供的柔性基板制备方法简单易操作, 而且剥离过程中能够有 效的避免对柔性基板造成损伤, 可以有效的提高柔性基板的生产效率。
以上所述仅是本发明的示范性实施方式, 而非用于限制本发明的保护范 围, 本发明的保护范围由所附的权利要求确定。 相关申请的交叉引用
本申请要求于 2013年 10月 25 日递交的第 201310511430.5号中国专利 申请的优先权, 在此全文引用上述中国专利申请公开的内容以作为本申请的 一部分。
Claims
1、 一种柔性基板制备方法, 包括:
在刚性基底上形成牺牲层;
在形成有所述牺牲层的所述刚性基底上制备柔性基板, 其中所述柔性基 板与所述牺牲层之间的接着力小于所述柔性基板与所述刚性基底之间的接着 力;
在所述牺牲层所在区域内对所述柔性基板进行切割以形成切割线, 所述 切割线为首尾相接的闭合切割线且所述切割线切割深至所述牺牲层;
在闭合切割线外侧的所述柔性基板上形成孔洞,向所述孔洞内注入气体; 利用封装材料将所述孔洞以及所述切割线密封, 将形成有所述牺牲层以 及所述柔性基板的所述刚性基底置于低压环境; 利用低压环境与所述孔洞内 注入气体之间产生的气压差, 将闭合切割线围绕的所述柔性基板与所述刚性 基底剥离开。
2、根据权利要求 1所述的柔性基板制备方法,其中所述牺牲层的面积小 于所述刚性基底的面积。
3、根据权利要求 1-2任一项所述的柔性基板制备方法, 其中所述柔性基 板面积大于所述牺牲层的面积且完全覆盖所述牺牲层。
4、根据权利要求 1-3任一项所述的柔性基板制备方法, 其中所述在形成 有牺牲层的刚性基底上制备柔性基板的步骤包括: 在形成有所述牺牲层的所 述刚性基底上形成柔性衬底, 并在所述柔性衬底上制备显示元件层。
5、根据权利要求 1-4任一项所述的柔性基板制备方法, 其中所述切割线 和所述孔洞均形成在所述柔性基板的对应所述牺牲层边缘的区域。
6、根据权利要求 1-5任一项所述的柔性基板制备方法, 其中所述低压环 境的真空度不大于 0.3KPa。
7、根据权利要求 1-6任一项所述的柔性基板制备方法, 其中在将闭合切 割线围绕的柔性基板与刚性基底剥离开之后, 所述方法还包括:
去除剥离完成后的所述柔性基板上残留的所述封装材料。
8、根据权利要求 1-7任一项所述的柔性基板制备方法, 其中所述牺牲层 的厚度不大于 1 μ πι。
9、根据权利要求 1-8任一项所述的柔性基板制备方法, 其中所述孔洞与 闭合切割线之间的最长距离不大于 5cm。
10、 根据权利要求 1-9任一项所述的柔性基板制备方法, 其中所述孔洞 的开口呈长方形、 正方形、 圓形、 三角形或十字形。
11、根据权利要求 1-10任一项所述的柔性基板制备方法, 其中在向所述 孔洞内注入气体的同时对注入的气体进行加压。
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CN109461845A (zh) * | 2018-10-17 | 2019-03-12 | 武汉华星光电半导体显示技术有限公司 | 柔性衬底、柔性显示面板及柔性显示面板的制作方法 |
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US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
US10410903B2 (en) | 2014-01-23 | 2019-09-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
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