WO2015033890A1 - 光半導体素子封止組成物、光半導体素子封止成形体、光半導体素子封止シート、光半導体装置および封止光半導体素子 - Google Patents

光半導体素子封止組成物、光半導体素子封止成形体、光半導体素子封止シート、光半導体装置および封止光半導体素子 Download PDF

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WO2015033890A1
WO2015033890A1 PCT/JP2014/072939 JP2014072939W WO2015033890A1 WO 2015033890 A1 WO2015033890 A1 WO 2015033890A1 JP 2014072939 W JP2014072939 W JP 2014072939W WO 2015033890 A1 WO2015033890 A1 WO 2015033890A1
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Prior art keywords
optical semiconductor
semiconductor element
sealing
wavelength conversion
composition
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PCT/JP2014/072939
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English (en)
French (fr)
Japanese (ja)
Inventor
誠 常
宗久 三谷
片山 博之
悠紀 江部
宏中 藤井
正路 山田
Original Assignee
日東電工株式会社
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Priority claimed from JP2014173853A external-priority patent/JP2016048764A/ja
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to CN201480048971.1A priority Critical patent/CN105518882A/zh
Priority to KR1020167005627A priority patent/KR20160052552A/ko
Publication of WO2015033890A1 publication Critical patent/WO2015033890A1/ja

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Definitions

  • the present invention relates to an optical semiconductor element encapsulating composition, an optical semiconductor element encapsulating molded article, an optical semiconductor element encapsulating sheet, an optical semiconductor device and an encapsulating optical semiconductor element, and more specifically, an optical semiconductor element encapsulating composition and an optical semiconductor
  • the present invention relates to an element sealing molded body, an optical semiconductor element sealing sheet, an optical semiconductor device including them, and an sealing optical semiconductor element.
  • white light semiconductor devices are known as light emitting devices capable of emitting high energy light.
  • a white light semiconductor device for example, an optical semiconductor device including a sealing material in which silica particles are dispersed and an optical semiconductor element covered with the sealing material has been proposed (for example, Patent Document 1). reference.).
  • Patent Document 1 5 g of silica particles are added to 5 g of silicone elastomer, and they are dispersed to prepare a liquid resin composition. From this, a first sealing material is prepared, thereby sealing an optical semiconductor element. ing.
  • An object of the present invention is to provide an optical semiconductor element sealing composition capable of improving the light extraction efficiency, an optical semiconductor element sealing molded body, an optical semiconductor element sealing sheet, an optical semiconductor device including the same, and a sealing optical semiconductor It is to provide an element.
  • the optical semiconductor element sealing composition of the present invention is an optical semiconductor element sealing composition containing a sealing resin and light diffusing organic particles, the refractive index of the sealing resin, and the light diffusing organic.
  • the absolute value of the difference from the refractive index of the particles is 0.020 or more and 0.135 or less, and the content ratio of the light diffusing organic particles to the optical semiconductor element sealing composition is 1% by mass or more, 10 It is characterized by being used for sealing of an optical semiconductor element.
  • the absolute value of the difference between the refractive index of the sealing resin and the refractive index of the light diffusing organic particles is within a specific range, and the inclusion of the light diffusing organic particles Since the ratio is within a specific range and the optical semiconductor element sealing composition is used for sealing the optical semiconductor element, the extraction efficiency of light emitted from the optical semiconductor element can be improved.
  • the specific gravity of the light diffusing organic particles can be brought close to the specific gravity of the sealing resin. Therefore, in the optical semiconductor element sealing composition, the light diffusing organic particles can be uniformly dispersed in the sealing resin.
  • the average particle diameter of the light diffusing organic particles is more than 5 ⁇ m and not more than 15 ⁇ m.
  • the average particle diameter of the light diffusing organic particles is within a specific range, the light extraction efficiency can be further improved.
  • the content ratio of the light diffusing organic particles to the optical semiconductor element sealing composition is 5% by mass or more.
  • the content ratio of the light diffusing organic particles to the photosemiconductor element sealing composition is not less than a specific lower limit, the light extraction efficiency can be further improved.
  • the absolute value of the difference between the refractive index of the sealing resin and the refractive index of the light diffusing organic particles is 0.025 or more and 0.100 or less. Preferably it is.
  • the absolute value of the difference between the refractive index of the sealing resin and the refractive index of the light diffusing organic particles is within a specific range, the light extraction efficiency is further improved. Can be made.
  • the optical semiconductor element sealing composition of the present invention preferably contains a phosphor.
  • the wavelength of light emitted from the optical semiconductor element can be converted by the phosphor. Therefore, high energy light can be irradiated.
  • optical semiconductor element sealing molded body of the present invention is characterized by being obtained by molding the above-described optical semiconductor element sealing composition.
  • this optical semiconductor element sealing molded body is obtained by molding the above-described optical semiconductor element sealing composition, the extraction efficiency of light emitted from the optical semiconductor element while securely sealing the optical semiconductor element Can be improved.
  • optical semiconductor element encapsulating sheet of the present invention is obtained by molding the above-described optical semiconductor element encapsulating composition into a sheet shape.
  • this semiconductor element encapsulating sheet is obtained by molding the above-described optical semiconductor element encapsulating composition into a sheet shape, the efficiency of extracting light emitted from the optical semiconductor element is improved while having excellent transportability. Can do.
  • An optical semiconductor device includes a substrate, an optical semiconductor element mounted on the substrate, and the above-described optical semiconductor element sealing molded body that seals the optical semiconductor element.
  • this optical semiconductor device has an optical semiconductor element sealing molded body having excellent light extraction efficiency, it has excellent light emission characteristics.
  • the optical semiconductor device of the present invention is characterized by comprising a substrate, an optical semiconductor element mounted on the substrate, and the above-described optical semiconductor element sealing sheet for sealing the optical semiconductor element.
  • this optical semiconductor device has an optical semiconductor element encapsulating sheet with excellent light extraction efficiency, it has excellent light emission characteristics.
  • the sealed optical semiconductor element of the present invention is characterized by comprising an optical semiconductor element and the above-described optical semiconductor element sealing molded body for sealing the optical semiconductor element.
  • this encapsulated optical semiconductor element has an optical semiconductor element encapsulated molded article excellent in light extraction efficiency, it has excellent light emission characteristics.
  • the encapsulating optical semiconductor element of the present invention is characterized by comprising an optical semiconductor element and the above-described optical semiconductor element encapsulating sheet for encapsulating the optical semiconductor element.
  • this encapsulated optical semiconductor element has an optical semiconductor element encapsulating sheet excellent in light extraction efficiency, it has excellent light emission characteristics.
  • the optical semiconductor element sealing composition, the optical semiconductor element sealing molded body, and the optical semiconductor element sealing sheet of the present invention can improve the extraction efficiency of light emitted from the optical semiconductor element.
  • optical semiconductor device and the sealed optical semiconductor element of the present invention have the optical semiconductor element sealing sheet and the optical semiconductor element sealed molded body having excellent light extraction efficiency, they have excellent light emission characteristics.
  • FIG. 1A and 1B are process diagrams for explaining a method for producing an embodiment of an optical semiconductor device of the present invention.
  • FIG. 1A is a diagram illustrating an embodiment of an optical semiconductor element encapsulating sheet of the present invention.
  • a step of preparing a sealing member provided with a semiconductor element sealing wavelength conversion sheet and a first release sheet FIG. 1B shows a step of covering and sealing the optical semiconductor element with the optical semiconductor element sealing wavelength conversion sheet.
  • 2A to 2C are process diagrams for explaining a modification of the method for manufacturing a semiconductor device.
  • FIG. 2A includes a sealing member and an element member including a second release sheet and an optical semiconductor element.
  • FIG. 2B shows a step of covering and sealing the optical semiconductor element with the optical semiconductor element sealing wavelength conversion sheet
  • FIG. 2C shows a step of mounting the sealed optical semiconductor element on the substrate.
  • 3A and 3B are process diagrams for explaining a modification of the method for manufacturing a semiconductor device, in which FIG. 3A is a process of preparing a mounting substrate, and FIG. 3B is an optical semiconductor element sealing wavelength conversion composition. The process of apply
  • 4A and 4B are process diagrams for explaining a modification of the method for manufacturing a semiconductor device, in which FIG. 4A is a process for preparing a mounting substrate including a housing, and FIG. 4B is a wavelength conversion composition for sealing a semiconductor element. The process of potting an object in a housing is shown.
  • An optical semiconductor element sealing wavelength conversion composition which is an embodiment of the optical semiconductor element sealing composition of the present invention contains a sealing resin and light diffusing organic particles as essential components. It contains a stop resin, light diffusing organic particles, and a phosphor.
  • a sealing resin and light diffusing organic particles as essential components. It contains a stop resin, light diffusing organic particles, and a phosphor.
  • sealing resin examples include a transparent resin used as a sealing material for sealing the optical semiconductor element.
  • examples of the sealing resin include a thermosetting resin and a thermoplastic resin, preferably a thermosetting resin.
  • thermosetting resin examples include a two-stage reaction curable resin and a one-stage reaction curable resin.
  • the two-stage reaction curable resin has two reaction mechanisms. In the first stage reaction, the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained. To C-stage (complete curing). That is, the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions. However, the two-stage reaction curable resin can be changed from the A-stage state to the C-stage state at a time without maintaining the B-stage state by intense heating.
  • the B stage state is a state between the A stage state in which the thermosetting resin is liquid and the C stage state in which the thermosetting resin is completely cured. It is a semi-solid or solid state smaller than the elastic modulus in the C-stage state.
  • the first-stage reaction curable resin has one reaction mechanism, and can be C-staged (completely cured) from the A-stage state by the first-stage reaction.
  • the first-stage reaction curable resin can be changed from the A-stage state to the B-stage state in the middle of the first-stage reaction. Is resumed, and includes a thermosetting resin that can be converted into a C stage (completely cured) from the B stage state. That is, such a thermosetting resin is a thermosetting resin that can be in a B-stage state.
  • the first-stage reaction curable resin cannot be controlled to stop in the middle of the first-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage (completely cured).
  • A) thermosetting resin is a thermosetting resin that can be in a B-stage reaction.
  • sealing resin examples include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • a silicone resin is used as the sealing resin.
  • the sealing resin described above may be the same type or a plurality of types.
  • silicone resin examples include silicone resin compositions such as an addition reaction curable silicone resin composition and a condensation / addition reaction curable silicone resin composition from the viewpoint of transparency, durability, heat resistance, and light resistance. . Silicone resins may be used alone or in combination.
  • the addition reaction curable silicone resin composition is a one-step reaction curable resin and contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.
  • the alkenyl group-containing polysiloxane contains two or more alkenyl groups and / or cycloalkenyl groups in the molecule.
  • the alkenyl group-containing polysiloxane is specifically represented by the following average composition formula (1).
  • R 1 a R 2 b SiO (4-ab) / 2 (In the formula, R 1 represents an alkenyl group having 2 to 10 carbon atoms and / or a cycloalkenyl group having 3 to 10 carbon atoms. R 2 represents an unsubstituted or substituted monovalent carbon atom having 1 to 10 carbon atoms.
  • a hydrogen group (excluding an alkenyl group and a cycloalkenyl group); a is from 0.05 to 0.50, and b is from 0.80 to 1.80.
  • examples of the alkenyl group represented by R 1 include alkenyl having 2 to 10 carbon atoms such as vinyl, allyl, propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl and the like. Groups.
  • examples of the cycloalkenyl group represented by R 1 include a cycloalkenyl group having 3 to 10 carbon atoms such as a cyclohexenyl group and a norbornenyl group.
  • R 1 is preferably an alkenyl group, more preferably an alkenyl group having 2 to 4 carbon atoms, and still more preferably a vinyl group.
  • the alkenyl groups represented by R 1 may be the same type or a plurality of types.
  • the monovalent hydrocarbon group represented by R 2 is an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms other than an alkenyl group and a cycloalkenyl group.
  • Examples of the unsubstituted monovalent hydrocarbon group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, and a pentyl group.
  • Alkyl groups having 1 to 10 carbon atoms such as heptyl group, octyl group, 2-ethylhexyl group, nonyl group and decyl group, for example, cyclohexane having 3 to 6 carbon atoms such as cyclopropyl, cyclobutyl group, cyclopentyl group and cyclohexyl group.
  • alkyl groups such as aryl groups having 6 to 10 carbon atoms such as phenyl, tolyl and naphthyl groups, and aralkyl groups having 7 to 8 carbon atoms such as benzyl and benzylethyl groups.
  • Preferred examples include an alkyl group having 1 to 3 carbon atoms and an aryl group having 6 to 10 carbon atoms, and more preferred examples include a methyl group and / or a phenyl group.
  • examples of the substituted monovalent hydrocarbon group include those obtained by substituting a hydrogen atom in the above-mentioned unsubstituted monovalent hydrocarbon group with a substituent.
  • substituents examples include a halogen atom such as a chlorine atom, such as a glycidyl ether group.
  • substituted monovalent hydrocarbon group examples include a 3-chloropropyl group and a glycidoxypropyl group.
  • the monovalent hydrocarbon group may be unsubstituted or substituted, and is preferably unsubstituted.
  • the monovalent hydrocarbon groups represented by R 2 may be of the same type or a plurality of types.
  • a methyl group and / or a phenyl group are mentioned, More preferably, combined use of a methyl group and a phenyl group is mentioned.
  • A is preferably 0.10 or more and 0.40 or less.
  • B is preferably 1.5 or more and 1.75 or less.
  • the weight average molecular weight of the alkenyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5000 or less.
  • the weight average molecular weight of the alkenyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.
  • the alkenyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.
  • alkenyl group-containing polysiloxane may be of the same type or a plurality of types.
  • the hydrosilyl group-containing polysiloxane contains, for example, two or more hydrosilyl groups (SiH groups) in the molecule.
  • the hydrosilyl group-containing polysiloxane is represented by the following average composition formula (2).
  • composition formula (2) H c R 3 d SiO (4-cd) / 2 (Wherein R 3 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.)
  • R 3 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.
  • R 3 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.)
  • an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms more preferably an alkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 10 carbon atoms, more preferably a methyl group. And / or a phenyl group.
  • C is preferably 0.5 or less.
  • D is preferably 1.3 or more and 1.7 or less.
  • the weight average molecular weight of the hydrosilyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5000 or less.
  • the weight average molecular weight of the hydrosilyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.
  • the hydrosilyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.
  • hydrosilyl group-containing polysiloxane may be of the same type or a plurality of types.
  • At least one of the hydrocarbon groups R 2 and R 3 preferably includes a phenyl group, more preferably, R 2 and R 3 Both hydrocarbons contain a phenyl group.
  • the addition reaction curable silicone resin composition is a phenyl silicone resin composition.
  • This phenyl silicone resin composition is a one-stage reaction curable resin that can be in a B-stage state.
  • the addition reaction curable silicone resin composition is a methyl silicone resin composition.
  • the methyl silicone resin composition is a one-stage reaction curable resin that cannot be in a B-stage state.
  • the blending ratio of the hydrosilyl group-containing polysiloxane is the ratio of the number of moles of alkenyl groups and cycloalkenyl groups of the alkenyl group-containing polysiloxane to the number of moles of hydrosilyl groups of the hydrosilyl group-containing polysiloxane (number of moles of alkenyl groups and cycloalkenyl groups). / Number of moles of hydrosilyl group) is adjusted to be, for example, 1/30 or more, preferably 1/3 or more, and for example, 30/1 or less, preferably 3/1 or less.
  • the hydrosilylation catalyst is a substance (addition catalyst) that improves the reaction rate of the hydrosilylation reaction (hydrosilyl addition) between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane. If it exists, it will not specifically limit, For example, a metal catalyst is mentioned. Examples of the metal catalyst include platinum catalysts such as platinum black, platinum chloride, chloroplatinic acid, platinum-olefin complexes, platinum-carbonyl complexes, and platinum-acetyl acetate, such as palladium catalysts such as rhodium catalyst.
  • the blending ratio of the hydrosilylation catalyst is, for example, 1.0 ppm or more on a mass basis with respect to the alkenyl group-containing polysiloxane and the hydrosilyl group-containing polysiloxane as the metal amount of the metal catalyst (specifically, metal atom).
  • Yes for example, 10000 ppm or less, preferably 1000 ppm or less, and more preferably 500 ppm or less.
  • the addition reaction curable silicone resin composition is prepared by blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst in the above-described proportions.
  • the above addition reaction curable silicone resin composition is prepared and used in an A stage (liquid) state by blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.
  • the phenyl silicone resin composition undergoes a hydrosilylation addition reaction between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane by heating under desired conditions. After that, the hydrosilylation addition reaction is once stopped. Thus, the A stage state can be changed to the B stage (semi-cured) state. Thereafter, the above-described hydrosilylation addition reaction is resumed and completed by heating under further desired conditions. As a result, the B stage state can be changed to the C stage (fully cured) state.
  • the phenyl silicone resin composition When the phenyl silicone resin composition is in the B stage (semi-cured) state, it is solid.
  • the B-staged phenyl silicone resin composition can have both thermoplasticity and thermosetting properties. That is, the B-stage phenyl silicone resin composition is once cured by heating and then completely cured.
  • the above-described methyl silicone resin composition causes a hydrosilylation addition reaction between an alkenyl group and / or a cycloalkenyl group and a hydrosilyl group, and is accelerated and completed without stopping.
  • the A stage state can be changed to the C stage (fully cured) state.
  • a commercial item is used for the methyl silicone resin composition. Examples of commercially available products include the ELASTOSIL series (manufactured by Asahi Kasei Wacker Silicone Co., specifically, methyl silicone resin compositions such as ELASTOSIL LR7665), the KER series (manufactured by Shin-Etsu Silicone), and the like.
  • the condensation / addition reaction curable silicone resin composition is a two-stage reaction curable resin, and specifically, for example, those described in JP 2010-265436 A, JP 2013-187227 A, and the like. 1 to 8 condensation / addition reaction curable silicone resin compositions, for example, JP 2013-091705 A, JP 2013-001815 A, JP 2013-001814 A, JP 2013-001813 A, Examples thereof include a cage-type octasilsesquioxane-containing silicone resin composition described in JP2012-102167A.
  • the condensation / addition reaction curable silicone resin composition is solid and has both thermoplasticity and thermosetting properties.
  • the refractive index ne of the sealing resin is, for example, 1.40 or more, preferably 1.41 or more, and for example, 1.60 or less, preferably 1.57 or less.
  • the refractive index ne of the sealing resin is, for example, 1.40 or more. 50 or less, preferably less than 1.50, preferably 1.45 or less.
  • the refractive index ne of the optical semiconductor element sealing wavelength conversion composition is, for example, 1.50 or more, preferably 1.53 or more, and for example, 1.60 or less, preferably 1.57 or less.
  • the refractive index ne of the optical semiconductor element sealing wavelength conversion composition is calculated by an Abbe refractometer.
  • sealing resin is a thermosetting resin, it calculates as a refractive index of a hardening state (completely hardening state). Note that the refractive index of the sealing resin before curing is substantially the same as the refractive index of the sealing resin after curing.
  • the specific gravity of the sealing resin is, for example, 0.90 or more, preferably 0.95 or more, and for example, 1.3 or less, preferably 1.2 or less.
  • the content ratio of the sealing resin in the optical semiconductor element sealing wavelength conversion composition is, for example, 35% by mass or more, preferably 40% by mass or more, more preferably 45% by mass or more. % By mass or less, preferably 55% by mass or less, more preferably 50% by mass or less.
  • Light diffusing organic particles examples include organic fillers that impart light diffusibility to the optical semiconductor element-sealed wavelength conversion composition.
  • organic material of the light diffusing organic particles is a thermoplastic resin.
  • specific examples include acrylic resins, styrene resins, acrylic-styrene resins, silicone resins, polycarbonate resins, benzoguanamine resins, polyolefin resins, polyester resins, polyamide resins, and polyimide resins. . These can be used alone or in combination.
  • acrylic resin and styrene resin are preferable from the viewpoint of light diffusibility and availability.
  • the acrylic resin is a poly (meth) acrylic acid ester obtained by polymerizing a monomer containing a (meth) acrylic acid ester (acrylic acid ester and / or methacrylic acid ester).
  • a monomer containing a (meth) acrylic acid ester acrylic acid ester and / or methacrylic acid ester.
  • the styrene resin is, for example, a styrene polymer obtained by polymerizing a monomer containing a styrene monomer.
  • examples of the styrene resin include polystyrene and poly- ⁇ -methylstyrene.
  • the acrylic resin and the styrene resin may be a copolymer containing a copolymerizable monomer other than the acrylic monomer and the styrene monomer.
  • Preferred examples of the copolymerizable monomer include (meth) acrylic acid, acrylonitrile, ethylene, and butadiene. These copolymerizable monomers can be used alone or in combination of two or more.
  • These light diffusing organic particles may be cross-linked. That is, preferably, a cross-linked acrylic resin and a cross-linked styrene resin are used.
  • the light diffusing organic particles can be used alone or in combination.
  • the specific gravity of the light diffusing organic particles can be made close to the specific gravity of the sealing resin. Therefore, in the optical semiconductor element sealing wavelength conversion composition, the light diffusing organic particles can be uniformly dispersed by the sealing resin.
  • the light diffusing organic particles include SSX series (refractive index: 1.49, crosslinked polymethyl methacrylate particles), SBX series (refractive index: 1.59, crosslinked) as organic particles.
  • Polystyrene particles MSX series (refractive index 1.495 to 1.595, methyl methacrylate-styrene copolymer crosslinked particles), MB series (refractive index 1.49, polymethyl methacrylate particles), BMX series (refractive index) 1.49, crosslinked polybutyl methacrylate particles), Tospearl series (silicone particles), and the like.
  • the refractive index nl of the light diffusing organic particles is, for example, 1.45 or more, preferably 1.550 or more, more preferably 1.56 or more, and for example, 1.600 or less. .
  • the refractive index thereof is, for example, 1.45 or more, preferably 1.49 or more, for example, 1.60 or less, preferably 1. 57 or less.
  • the refractive index thereof is, for example, 1.54 or more, preferably 1.550 or more, for example, 1.65 or less, preferably 1. 60 or less. If the refractive index of the light diffusing organic particles is within the above range, the absolute value of the refractive index difference described below can be set to a desired range.
  • ) of the difference (refractive index difference, ne ⁇ nl) between the refractive index ne of the sealing resin and the refractive index nl of the light diffusing organic particles is 0.020 or more, 0 .135 or less. If the absolute value of the refractive index difference exceeds the upper limit, or if the absolute value of the refractive index difference does not satisfy the lower limit, the light extraction efficiency in the optical semiconductor element-sealed wavelength conversion composition is improved. Cannot be improved.
  • the absolute value of the refractive index difference (
  • the average particle diameter (average maximum length) of the light diffusing organic particles is, for example, 1 ⁇ m or more, preferably 3 ⁇ m or more, more preferably 4 ⁇ m or more, further preferably 5 ⁇ m or more, and particularly preferably more than 5 ⁇ m. And, for example, 100 ⁇ m or less, preferably 20 ⁇ m or less, more preferably 15 ⁇ m or less, and further preferably 10 ⁇ m or less.
  • the average particle diameter of the light diffusing organic particles is calculated as a D50 value. Specifically, it is measured by a laser diffraction particle size distribution meter.
  • the specific gravity of the light diffusing organic particles is, for example, 0.90 or more, preferably 0.95 or more, more preferably 1.0 or more, and for example, 1.5 or less, preferably 1.3. Below, more preferably, it is 1.25 or less.
  • the content ratio of the light diffusing organic particles is 1% by mass or more and 10% by mass or less with respect to the optical semiconductor element sealing wavelength conversion composition.
  • the content ratio of the light diffusing organic particles is less than the above lower limit, or when the content ratio of the light diffusing organic particles exceeds the above upper limit, the light extraction efficiency in the wavelength conversion composition encapsulating the optical semiconductor element is increased. It cannot be improved efficiently.
  • the content ratio of the light diffusing organic particles is preferably 5% by mass or more with respect to the optical semiconductor element-sealed wavelength conversion composition.
  • the content ratio of the above-described light diffusing organic particles is not less than the above lower limit, the light extraction efficiency in the optical semiconductor element-sealed wavelength conversion composition can be efficiently improved.
  • the content ratio of the light diffusing organic particles is, for example, 2 parts by mass or more, preferably 5 parts by mass or more, more preferably 10 parts by mass or more, with respect to 100 parts by mass of the sealing resin. For example, it is 30 parts by mass or less, preferably 22 parts by mass or less, and more preferably 15 parts by mass or less.
  • the phosphor has a wavelength conversion function, and can impart a wavelength conversion function to the optical semiconductor element-sealed wavelength conversion composition. That is, the phosphor can use the optical semiconductor element sealing sheet of the present invention as the optical semiconductor element sealing wavelength conversion sheet 1 (described later). Examples of the phosphor include a yellow phosphor that can convert blue light into yellow light, and a red phosphor that can convert blue light into red light.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce
  • red phosphor examples include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.
  • spherical shape is mentioned from a fluid viewpoint.
  • the average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less. But there is.
  • the specific gravity of the phosphor exceeds, for example, 2.0 and is, for example, 9.0 or less.
  • Fluorescent substances can be used alone or in combination.
  • the blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the sealing resin. Or less.
  • a silane coupling agent an anti-aging agent, a modifier, a surfactant, a dye, a pigment, inorganic particles (light diffusivity such as silica) Including inorganic particles
  • known additives such as discoloration inhibitors and ultraviolet absorbers can be added at an appropriate ratio.
  • the sealing resin, the light diffusing organic particles, the phosphor and, if necessary, the additive are blended in the above blending ratio and mixed. Thereby, the optical semiconductor element sealing wavelength conversion composition is prepared as a varnish.
  • the optical-semiconductor element sealing wavelength conversion composition is defoamed after the preparation as needed.
  • the defoaming method include known defoaming methods such as stirring defoaming, vacuum defoaming (vacuum defoaming), centrifugal defoaming, and ultrasonic defoaming.
  • FIG. 1A and FIG. 1B the upper side of the paper surface is the upper side (one side in the first direction, the one side in the thickness direction) and the lower side of the paper surface is the lower side (the other side in the first direction, the other side in the thickness direction).
  • the drawings other than FIGS. 1A and 1B are also based on the directions of FIGS. 1A and 1B.
  • FIG. 1A and FIG. 1B a method for producing an optical semiconductor element encapsulated wavelength conversion sheet 1 from the above-described optical semiconductor element encapsulated wavelength conversion composition by molding into a sheet shape will be described.
  • First release sheet 2 In this method, first, a first release sheet 2 is prepared as shown in FIG. 1A.
  • the first release sheet 2 is a protective sheet that covers and protects the back surface (upper surface in FIG. 1A) of the optical semiconductor element-sealed wavelength conversion sheet 1, and a coating base for the optical semiconductor element-sealed wavelength conversion composition (varnish). Used as a material.
  • the first release sheet 2 is an optical semiconductor for protecting the optical semiconductor element sealing wavelength conversion sheet 1 until the optical semiconductor element 5 (FIG. 1B) is sealed by the optical semiconductor element sealing wavelength conversion sheet 1.
  • the element sealing wavelength conversion sheet 1 is detachably attached to the surface (upper surface in FIG. 1A). That is, the 1st peeling sheet 2 is laminated
  • a polyester film for example, a polyethylene terephthalate film
  • a polycarbonate film for example, a polyolefin film (for example, a polyethylene film, a polypropylene film), a polystyrene film, an acrylic film, a silicone resin film
  • a resin sheet such as a fluororesin film, for example, a release plate such as a glass plate can be used.
  • the peelability from the optical semiconductor element sealing wavelength conversion sheet 1 is increased on the surface of the first release sheet 2 (the surface on which the optical semiconductor element sealing wavelength conversion sheet 1 is formed, the lower surface in FIG. 1A). For this reason, peeling treatment is performed as necessary.
  • the thickness of the first release sheet 2 is, for example, 20 to 100 ⁇ m from the viewpoint of handling properties and cost.
  • optical semiconductor element sealing wavelength conversion sheet 1 (Optical semiconductor element sealing wavelength conversion sheet 1) Next, in this method, the optical semiconductor element-sealed wavelength conversion sheet 1 is disposed on the surface of the first release sheet 2. Specifically, the optical semiconductor element-sealed wavelength conversion sheet 1 is laminated on the lower surface of the first release sheet 2.
  • the optical semiconductor element sealing wavelength conversion composition (varnish) is applied to the surface (lower surface) of the first release sheet 2, for example.
  • the application method include known application methods such as an applicator, cast, spin, and roll.
  • the optical semiconductor element sealing wavelength conversion composition contains a thermosetting resin that can be in a B-stage state
  • the thermosetting resin is semi-cured.
  • the optical semiconductor element-sealed wavelength conversion composition is cured (semi-cured) by heating.
  • the optical semiconductor element-sealed wavelength conversion composition containing the A-stage thermosetting resin is made into a B-stage.
  • the temperature is 70 ° C. or higher, preferably 80 ° C. or higher, and 120 ° C. or lower, preferably 100 ° C. or lower.
  • the time is, for example, 5 minutes or more, preferably 8 minutes or more, and for example, 30 minutes or less, preferably 20 minutes or less.
  • the solid-state optical semiconductor element-sealed wavelength conversion sheet 1 is disposed on the surface of the first release sheet 2 (the lower surface in FIG. 1A).
  • the optical semiconductor element sealing wavelength conversion sheet 1 is a molded body obtained by molding the above-described optical semiconductor element sealing wavelength conversion composition into a sheet shape.
  • the optical semiconductor element sealing wavelength conversion sheet 1 preferably encapsulates the optical semiconductor element in a semi-cured state (B stage state) when the sealing resin contains a thermosetting resin that can be in a B stage state. It is formed into a sheet form from the wavelength conversion composition. Furthermore, preferably, the optical semiconductor element-sealed wavelength conversion sheet 1 has both thermoplasticity and thermosetting properties. That is, the B-stage optical semiconductor element-encapsulated wavelength conversion sheet 1 can be cured after being plasticized once by heating.
  • the light diffusing organic particles and the phosphor are uniformly dispersed in the sealing resin as a matrix.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 specifically has a predetermined thickness, and is in the front-rear direction (direction perpendicular to the up-down direction) and the left-right direction (direction perpendicular to the up-down direction and the front-rear direction). Extends and has a flat upper surface and a flat lower surface.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 is disposed on the entire lower surface of the first release sheet 2.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 is not an optical semiconductor device 10 (see FIG. 1B) and a sealed optical semiconductor element 9 (see FIG. 2B), which will be described later, but an optical semiconductor device 10 and a sealed optical semiconductor element 9. 1, that is, a part for producing the optical semiconductor device 10 and the sealed optical semiconductor element 9, and is configured without including the optical semiconductor element 5 and the substrate 6 on which the optical semiconductor element 5 is mounted.
  • the sealing member 3 including the first release sheet 2 and the optical semiconductor element-sealed wavelength conversion sheet 1 is a device that circulates by itself and is industrially usable.
  • the sealing member 3 is formed in a substantially rectangular flat plate shape extending in the front-rear direction and the left-right direction.
  • the sealing member 3 does not include the optical semiconductor element 5 and / or the substrate 6, and preferably includes the first release sheet 2 and the optical semiconductor element sealing wavelength conversion sheet 1.
  • the 80 ° C. of the B stage optical semiconductor element sealing wavelength conversion sheet 1 is formed.
  • the shear storage elastic modulus G ′ is, for example, 3 Pa or more, preferably 12 Pa or more, and for example, 140 Pa or less, preferably 70 Pa or less.
  • the 80 ° C. shear storage elastic modulus G ′ of the optical semiconductor element-sealed wavelength conversion sheet 1 can be obtained by dynamic viscoelasticity measurement under the conditions of a frequency of 1 Hz, a temperature increase rate of 20 ° C./min, and a temperature range of 20 to 150 ° C.
  • the transmittance of the optical semiconductor element-sealed wavelength conversion sheet 1 with respect to light having a wavelength of 460 nm when the thickness is 600 ⁇ m is, for example, 70% or more, preferably 80% or more, more preferably 90% or more, and still more preferably. Is 95% or more and, for example, 100% or less.
  • the transmittance of the optical semiconductor element-sealed wavelength conversion sheet 1 is measured using, for example, an integrating sphere.
  • the thickness of the optical semiconductor element-sealed wavelength conversion sheet 1 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 1000 ⁇ m or less, preferably 500 ⁇ m or less.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 is processed into an appropriate size and / or shape (for example, cutting) according to the size, shape, arrangement, number, etc. of the optical semiconductor element 5.
  • optical semiconductor element sealing wavelength conversion sheet 1 is used for sealing of the optical semiconductor element 5 described below.
  • a mounting substrate 4 is first prepared.
  • the mounting substrate 4 includes a substrate 6 and an optical semiconductor element 5 mounted on the substrate 6.
  • the substrate 6 has a substantially rectangular flat plate shape extending in the front-rear direction and the left-right direction, and is, for example, an insulating substrate. Moreover, the board
  • the optical semiconductor element 5 is, for example, an optical element such as an LED or an LD, and is preferably an optical element that emits blue light (specifically, a blue LED).
  • the optical semiconductor element 5 is formed in a substantially flat plate shape along the front-rear direction and the left-right direction. Further, the optical semiconductor element 5 has a substantially rectangular shape in plan view, and a cross-sectional shape along the vertical direction and the front-rear direction and a cross-sectional shape along the vertical direction and the left-right direction are formed in a substantially rectangular shape.
  • the optical semiconductor element 5 is flip-chip mounted on the upper surface of the substrate 6 or connected by wire bonding.
  • the (length in the vertical direction) of the optical semiconductor element 5 is, for example, 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
  • the front-rear direction length and the left-right direction length of the optical semiconductor element 5 are appropriately set.
  • the front-rear direction length and the left-right direction length of the optical semiconductor element 5 are adjusted to be shorter than the front-rear direction length and the left-right direction length of the substrate 6.
  • the optical semiconductor element 5 is covered with the optical semiconductor element sealing wavelength conversion sheet 1. Specifically, the optical semiconductor element 5 is embedded by the optical semiconductor element sealing wavelength conversion sheet 1 of the sealing member 3.
  • the front-rear direction length and the left-right direction length of the optical semiconductor element-sealed wavelength conversion sheet 1 are shorter than the front-rear direction length and the left-right direction length of the substrate 6, and the front-rear direction length and the left-right direction length of the optical semiconductor element 5 It is adjusted longer than this.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 contains a thermosetting resin in a B-stage state and has both thermoplasticity and thermosetting properties
  • the optical semiconductor element-sealed wavelength conversion sheet 1 provides the optical semiconductor element 5. Buried. Specifically, the optical semiconductor element-sealed wavelength conversion sheet 1 containing a thermosetting resin in a B stage state is first plasticized by hot pressing. Subsequently, the plasticized optical semiconductor element-sealed wavelength conversion sheet 1 (the thermosetting resin contained therein) is completely cured (C stage) by heating.
  • the temperature of the hot press is, for example, the thermoplastic temperature of a thermoplastic / thermosetting silicone resin or higher, and preferably from the viewpoint of carrying out thermoplasticity and thermal curing at a time, or higher. Specifically, for example, it is 60 ° C. or higher, preferably 70 ° C. or higher, and for example, 150 ° C. or lower, preferably 120 ° C. or lower.
  • the time for hot pressing is, for example, 1 minute or more, preferably 3 minutes or more, and for example, 20 minutes or less, preferably 15 minutes or less.
  • a press pressure is 0.1 MPa or more, for example, Preferably, it is 0.3 MPa or more, for example, is 5 MPa or less, Preferably, it is 3 MPa or less.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 contains a thermosetting resin in a B-stage state and does not have both thermoplasticity and thermosetting properties (when it has only thermosetting properties)
  • the B-stage optical semiconductor element-sealed wavelength conversion sheet 1 is adhered (adhered) to the optical semiconductor element 5 and the substrate 6 using a known pressure-sensitive adhesive (not shown).
  • the thickness of an adhesive is 50 micrometers or less, for example, Preferably, it is 30 micrometers or less, for example, is 10 micrometers or more.
  • the sealing member 3 including the optical semiconductor element sealing wavelength conversion sheet 1 and the mounting substrate 4 are heated.
  • the heating temperature is, for example, 90 ° C. or more, preferably 105 ° C. or more, and for example, 160 ° C. or less, preferably 150 ° C. or less.
  • the heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and for example, 120 minutes or less, preferably 60 minutes or less.
  • the sealing resin in the B stage is C stage (completely cured). That is, the optical semiconductor element sealing wavelength conversion sheet 1 in the B stage state is C stage (completely cured).
  • the reaction of the phenyl silicone resin composition contains an alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and a hydrosilyl group.
  • the hydrosilyl addition reaction with the hydrosilyl group of the polysiloxane is further accelerated.
  • the alkenyl group and / or cycloalkenyl group or the hydrosilyl group of the hydrosilyl group-containing polysiloxane disappears, and the hydrosilyl addition reaction is completed, whereby the product of the C-stage phenyl-based silicone resin composition, A cured product is obtained. That is, by completing the hydrosilyl addition reaction, curability (specifically, thermosetting) is exhibited in the phenyl silicone resin composition.
  • R 5 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and a cycloalkenyl group) including a phenyl group. .5 or more and 2.0 or less.)
  • the unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R 5 includes an unsubstituted or substituted monovalent carbon group having 1 to 10 carbon atoms represented by R 2 in the formula (1). Examples thereof are the same as the hydrogen group and the unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R 3 in the formula (2).
  • an unsubstituted monovalent hydrocarbon group more preferably an alkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 10 carbon atoms, and more preferably a combined use of a phenyl group and a methyl group is used.
  • an unsubstituted monovalent hydrocarbon group more preferably an alkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 10 carbon atoms, and more preferably a combined use of a phenyl group and a methyl group.
  • E is preferably 0.7 or more and 1.0 or less.
  • the proportion of the phenyl groups in R 5 in the average composition formula of the product (3) is, for example, 30 mol% or more, preferably is 35 mol% or more, and is, for example, 55 mol% or less, preferably 50 mol% or less.
  • thermoplasticity of the B-stage optical semiconductor element-encapsulated wavelength conversion sheet 1 is increased.
  • the 80 ° C. shear storage modulus G ′ of the optical semiconductor element sealing wavelength conversion sheet 1 described later exceeds a desired range, the optical semiconductor element 5 is securely embedded and sealed. It may not be possible.
  • the content ratio of the phenyl group in R 5 of the average composition formula (3) of the product is a monovalent hydrocarbon group directly bonded to the silicon atom of the product (indicated by R 5 in the average composition formula (3)). This is the phenyl group concentration.
  • the content ratio of the phenyl group in R 5 of the average composition formula (3) of the product is calculated by 1 H-NMR and 29 Si-NMR. Details of the calculation method of the content ratio of the phenyl group in R 5 are described in Examples described later, and are calculated by 1 H-NMR and 29 Si-NMR, for example, based on the description of WO2011 / 125463 and the like. .
  • the first release sheet 2 is peeled from the optical semiconductor element-sealed wavelength conversion sheet 1. Specifically, the 1st peeling sheet 2 is peeled off from the upper surface of the optical semiconductor element sealing wavelength conversion sheet 1 so that it may curve in a substantially U shape.
  • an optical semiconductor device 10 including the substrate 6, the optical semiconductor element 5 mounted on the substrate 6, and the optical semiconductor element sealing wavelength conversion sheet 1 for sealing the optical semiconductor element 5 is obtained.
  • the optical semiconductor device 10 does not include the first release sheet 2 and includes the substrate 6, the optical semiconductor element 5, and the optical semiconductor element-sealed wavelength conversion sheet 1.
  • optical semiconductor device 10 electrical energy is input from the terminal of the substrate 6 to the optical semiconductor element 5, and the optical semiconductor element 5 emits light. Then, the light emitted from the optical semiconductor element 5 passes through the sealing resin and is diffused by the light diffusing organic particles. A part of the light is wavelength-converted by the phosphor. The light diffused and wavelength-converted by the optical semiconductor element sealing wavelength conversion sheet 1 is radiated upward and laterally (front-rear direction and left-right direction) of the optical semiconductor element sealing wavelength conversion sheet 1.
  • the refractive index ne of the sealing resin and the refractive index nl of the light diffusing organic particles The absolute value (
  • the specific gravity of the light diffusing organic particles can be made close to the specific gravity of the sealing resin. Therefore, in the optical semiconductor element-sealed wavelength conversion composition, and thus, in the optical semiconductor element-sealed wavelength conversion sheet 1, the light diffusing organic particles can be uniformly dispersed in the sealing resin. Therefore, the light extraction efficiency can be further improved.
  • the light emitted from the optical semiconductor element 5 can be wavelength-converted by the phosphor. Therefore, high energy light can be irradiated.
  • this optical semiconductor element sealing wavelength conversion sheet 1 is obtained by shaping
  • this optical semiconductor element-sealed wavelength conversion sheet 1 is obtained by molding the optical semiconductor element-sealed wavelength conversion composition into a sheet shape, it is excellent in transportability. That is, even if both the 1st peeling sheet 2 and the optical semiconductor element sealing wavelength conversion sheet 1 are formed in the elongate shape extended in the front-back direction, they can be manufactured compactly in a roll shape, and are therefore excellent in transportability. . Furthermore, if the sealing member 3 provided with the 1st peeling sheet 2 and the optical semiconductor element sealing wavelength conversion sheet 1 is manufactured in roll shape, a roll-to-roll method can be employ
  • this optical semiconductor device 10 Since this optical semiconductor device 10 has the optical semiconductor element-sealed wavelength conversion sheet 1 having excellent light extraction efficiency, it has excellent light emission characteristics.
  • the optical semiconductor element sealing wavelength conversion composition and the optical semiconductor element sealing containing a phosphor As an embodiment of the optical semiconductor element sealing composition and the optical semiconductor element sealing sheet of the present invention, the optical semiconductor element sealing wavelength conversion composition and the optical semiconductor element sealing containing a phosphor.
  • the wavelength conversion sheet 1 can also be set as the optical semiconductor element sealing composition and optical semiconductor element sealing sheet 1 which do not have a wavelength conversion function, for example. That is, in the above-described embodiment, the optical semiconductor element-sealed wavelength conversion sheet 1 is formed into a sheet shape from the optical semiconductor element-sealed wavelength conversion composition containing a phosphor, but is not limited thereto. For example, it can form in a sheet form from the optical semiconductor element sealing composition which does not contain fluorescent substance.
  • the optical semiconductor element sealing composition contains a sealing resin and light diffusing organic particles.
  • a wavelength conversion sheet containing a phosphor can be separately disposed on the upper surface of the optical semiconductor element sealing sheet 1.
  • the optical semiconductor device sealing wavelength conversion sheet 1 containing a fluorescent substance and the optical semiconductor device 10 provided with the optical semiconductor element sealing wavelength conversion sheet 1 are mentioned.
  • the configuration can be simplified and the manufacturing cost can be reduced.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 contains a thermosetting resin in a B-stage state
  • the optical semiconductor in a B-stage state is used without using the above-described adhesive.
  • the optical semiconductor element 5 is embedded by the element sealing wavelength conversion sheet 1.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 can be prepared in a C-stage state in advance and can be adhered to the optical semiconductor element 5 using an adhesive.
  • the optical semiconductor element 5 is embedded by the B-stage optical semiconductor element sealing wavelength conversion sheet 1. According to this embodiment, since it is not necessary to use an adhesive, the configuration can be simplified and the manufacturing cost can be reduced.
  • the optical semiconductor element 5 mounted in advance on the substrate 6 is sealed by the optical semiconductor element sealing wavelength conversion sheet 1, but for example, FIG. 2A and FIG.
  • positioned at the 2nd peeling sheet 8 can also be sealed.
  • the sealing member 3 described above is prepared.
  • the element member 7 is prepared separately.
  • the element member 7 includes a second release sheet 8 and an optical semiconductor element 5 disposed on the surface (upper surface) of the second release sheet 8.
  • the second release sheet 8 covers and seals the optical semiconductor element 5 with the optical semiconductor element sealing wavelength conversion sheet 1 to obtain the sealed optical semiconductor element 9, and then peels off the sealed optical semiconductor element 9.
  • the optical semiconductor element 5 see FIG. 2B
  • the second release sheet 8 supports the optical semiconductor element 5 and covers the back surface (the lower surface in FIG. 2B) of the optical semiconductor element 5 at the time of shipment / transport / storage of the sealed optical semiconductor element 9.
  • the 2nd peeling sheet 8 consists only of a flexible film.
  • the second release sheet 8 is made of the same material as the first release sheet 2 described above. Moreover, the 2nd peeling sheet 8 can also be formed from the heat
  • the sealing member 3 and the element member 7 are then arranged to face each other so that the optical semiconductor element sealing wavelength conversion sheet 1 and the optical semiconductor element 5 face each other.
  • the optical semiconductor element 5 is embedded by the optical semiconductor element sealing wavelength conversion sheet 1 with the sealing member 3 being brought close to the element member 7.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 is also disposed on the upper surface of the second release sheet 8 exposed from the optical semiconductor element 5.
  • the light-stopping semiconductor element 11 is obtained.
  • the encapsulating optical semiconductor element 11 with the release sheet includes the encapsulating optical semiconductor element 9, the second release sheet 8, and the first release sheet 2, and is a component for producing the optical semiconductor device 10. It is a device that can be distributed and used industrially.
  • the sealed optical semiconductor element 9 includes an optical semiconductor element 5 and an optical semiconductor element sealing wavelength conversion sheet 1 that seals the optical semiconductor element 5. Specifically, the sealed optical semiconductor element 9 does not include the second release sheet 8 and / or the first release sheet 2, and preferably includes the optical semiconductor element sealed wavelength conversion sheet 1 and the optical semiconductor element 5. Become.
  • the first release sheet 2 is peeled from the upper surface of the optical semiconductor element-sealed wavelength conversion sheet 1.
  • the sealed optical semiconductor element 9 including the optical semiconductor element sealed wavelength conversion sheet 1 and the optical semiconductor element 5 is obtained.
  • the sealed optical semiconductor element 9 does not include the first release sheet 2, and preferably includes the optical semiconductor element sealed wavelength conversion sheet 1 and the optical semiconductor element 5.
  • the sealed optical semiconductor element 9 is peeled from the second release sheet 8. Specifically, the sealed optical semiconductor element 9 is peeled from the second release sheet 8 upward.
  • the sealed optical semiconductor element 9 is also a component for producing the optical semiconductor device 10 and is a device that can be distributed industrially and used industrially.
  • the sealed optical semiconductor element 9 is mounted on the substrate 6. Specifically, a terminal (not shown) of the optical semiconductor element 5 of the sealed optical semiconductor element 9 is brought into contact with a terminal (not shown) of the substrate 6 to be electrically connected.
  • the optical semiconductor device 10 including the substrate 6 and the sealed optical semiconductor element 9 mounted on the substrate 6 is obtained.
  • the optical semiconductor device 10 includes a substrate 6 and a sealing layer-covered optical semiconductor element 10. That is, the optical semiconductor device 10 does not include the second release sheet 8 and preferably includes the substrate 6, the optical semiconductor element 5, and the optical semiconductor element-sealed wavelength conversion sheet 1.
  • the sealing member 3 provided with the optical semiconductor element sealing wavelength conversion sheet 1 shape
  • a mounting substrate 4 including an optical semiconductor element 5 and a substrate 6 is prepared.
  • a liquid optical semiconductor element sealing wavelength conversion composition is disposed on the substrate 6 so as to cover the optical semiconductor element 5.
  • the liquid optical semiconductor element-sealed wavelength conversion composition is in an A stage state, and its viscosity at 25 ° C. is, for example, 1,000 mPa ⁇ s or more, preferably 3,000 mPa ⁇ s or more, more preferably 5 It is 1,000,000 mPa ⁇ s or more, for example, 1,000,000 mPa ⁇ s or less, preferably 500,000 mPa ⁇ s or less, and more preferably 200,000 mPa ⁇ s or less.
  • a liquid optical semiconductor element sealing wavelength conversion composition is applied.
  • a coating device such as a dispenser, an applicator, or a slit die coater may be used.
  • the film 13 made of the optical semiconductor element sealing wavelength conversion composition is formed.
  • the coating 13 is made of, for example, an optical semiconductor element sealing wavelength conversion composition containing an A-stage thermosetting resin. Therefore, the film 13 is in the A stage state.
  • the film 13 is heated to form a C-stage.
  • the A stage state is changed to the C stage state without obtaining the B stage state or after obtaining the B stage state.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 as the optical semiconductor element-sealed wavelength conversion molded body is produced in a state in which the optical semiconductor element 5 is sealed on the substrate 6.
  • substrate 6, the optical semiconductor element 5, and the optical semiconductor element sealing wavelength conversion sheet 1 is obtained.
  • the mounting board 4 does not include the housing 14.
  • the mounting substrate 4 can include a housing 14.
  • the mounting substrate 4 includes a substrate 6, an optical semiconductor element 5, and a housing 14.
  • the substrate 6, the optical semiconductor element 5, and the housing 14 are included.
  • the housing 14 is provided on the substrate 6 and is formed in a substantially rectangular frame shape in plan view or a substantially circular shape in plan view (the plan view shape of the housing 14 is not shown in FIG. 4A).
  • the housing 14 is formed in a substantially trapezoidal cylindrical shape that gradually becomes narrower upward.
  • the housing 14 is disposed outside the optical semiconductor element 5 with a space therebetween so as to surround the optical semiconductor element 5 in plan view.
  • the substrate 6, the optical semiconductor element 5, and the housing A mounting substrate 4 having 14 is prepared.
  • the liquid optical semiconductor element sealing wavelength conversion composition is directly arranged in the housing 14.
  • a liquid optical semiconductor element sealing wavelength conversion composition is potted in the housing 14.
  • the film 13 made of a liquid optical semiconductor element sealing wavelength conversion composition is obtained.
  • the film 13 is heated to form a C-stage.
  • the optical semiconductor element sealing wavelength conversion molded body 20 is molded on the substrate 6 in a state of sealing the optical semiconductor element 5.
  • the optical semiconductor element sealing wavelength conversion molded body 20 is formed in a shape corresponding to the outer shape of the optical semiconductor element 5 and the inner shape of the housing 14.
  • the optical semiconductor element-sealed wavelength conversion molded body 20 has a substantially truncated cone shape that gradually becomes wider toward the upper side, and a concave portion corresponding to the optical semiconductor element 5 is formed on the lower surface.
  • optical semiconductor device 10 provided with the board
  • Example 1 (sealing resin: methyl silicone resin composition)
  • a silicone resin composition (trade name “ELASTOSIL LR7665”, addition reaction curable silicone resin composition, one-stage reaction curable resin that cannot be in a B-stage state, refractive index 1.410, specific gravity 1.
  • the prepared optical semiconductor element-sealed wavelength conversion composition was applied to the surface (lower surface) of the first release sheet 2 (polyester film, trade name “SS4C”, thickness 100 ⁇ m, manufactured by Nippa Corporation) on an applicator (“Baker applicator”).
  • YBA type " the scale was adjusted to 2.0 to 3.0, and applied with Yoshimitsu Seiki Co., Ltd.
  • the film was put in an oven and heated at 105 ° C. for 10 minutes to completely cure the optical semiconductor element-sealed wavelength conversion composition (C-stage), and as shown in FIG.
  • An optical semiconductor element-sealed wavelength conversion sheet 1 (film thickness: 160 to 235 ⁇ m) was produced. That is, the sealing member 3 which consists of the 1st peeling sheet 2 and the optical semiconductor element sealing wavelength conversion sheet 1 was manufactured.
  • the optical semiconductor element-sealed wavelength conversion sheet 1 was cut with a punch (diameter 2 mm).
  • a mounting substrate 4 provided with a substrate 6 and an optical semiconductor element 5 (LED, Epistar, dimensions 1.14 mm ⁇ 1.14 mm, thickness 150 ⁇ m, manufactured by Epistar) mounted on the substrate 6 was prepared.
  • the sealing member 3 was aligned with the mounting substrate 4 with a measuring microscope, and the optical semiconductor element sealing wavelength conversion sheet 1 was attached to the optical semiconductor element 5 and the substrate 6 using an adhesive.
  • the first release sheet 2 was peeled from the optical semiconductor element-sealed wavelength conversion sheet 1.
  • an optical semiconductor device 10 including the substrate 6, the optical semiconductor element 5, and the optical semiconductor element-sealed wavelength conversion sheet 1 was produced.
  • Examples 2 to 7 and Comparative Examples 1 to 5 and 7 to 11 (sealing resin: methyl silicone resin composition) Except having changed the compounding prescription
  • Example 8 (sealing resin: phenyl silicone resin composition) Instead of the methyl silicone resin composition (one-stage reaction curable resin that cannot be in a B-stage state), a phenyl silicone resin composition (one-stage reaction curable resin that can be in a B-stage state) is used.
  • the optical semiconductor element encapsulated wavelength conversion composition was prepared, and the example was that the B-stage optical semiconductor element encapsulated wavelength conversion sheet 1 was converted to the C stage by hot pressing without using an adhesive. 1 was processed to produce an optical semiconductor device 10.
  • a phenyl silicone resin composition was prepared according to the following synthesis examples and preparation examples.
  • the weight average molecular weight in terms of polystyrene of the alkenyl group-containing polysiloxane A was measured by gel permeation chromatography and found to be 2300.
  • polystyrene equivalent weight average molecular weight of the alkenyl group-containing polysiloxane B was measured by gel permeation chromatography and found to be 1000.
  • the average unit formula and average composition formula of the hydrosilyl group-containing polysiloxane C are as follows.
  • polystyrene equivalent weight average molecular weight of the hydrosilyl group-containing polysiloxane C was measured by gel permeation chromatography and found to be 1000.
  • the heating temperature was 90 ° C.
  • the heating time was 10 minutes
  • the pressing pressure was 1.0 MPa.
  • the optical semiconductor element-sealed wavelength conversion composition in the B-stage state was once thermally thermoplasticized by hot pressing to cover the optical semiconductor element 5 and then thermally cured (C stage).
  • Example 9 and Comparative Example 6 (sealing resin: phenyl silicone resin composition) Except having changed the compounding prescription
  • each of the methyl silicone resin composition and the phenyl silicone resin composition alone (that is, containing no light diffusing organic particles and a phosphor) is reacted at 100 ° C. for 1 hour (completely cured). , C stage) to obtain a cured product.
  • the obtained cured product was measured with an Abbe refractometer.
  • the refractive index of the cured product of the methyl silicone resin composition was 1.410
  • the refractive index of the cured product of the phenyl silicone resin composition was 1.565.
  • the A-stage phenyl-based silicone resin composition is reacted (completely cured, C-staged) at 100 ° C. for 1 hour without adding light-diffusing organic particles and phosphors, and a cured product is obtained. (Completely cured state) was obtained.
  • Total luminous flux and its improvement effect The total luminous flux of the optical semiconductor device 10 of each example and each comparative example was measured by an instantaneous multi-photometry system (MCPD-9800, manufactured by Otsuka Electronics Co., Ltd.). The measurement conditions are as follows.
  • Methyl silicone resin composition trade name “ELASTOSIL LR7665”, addition reaction curable silicone resin composition, one-stage reaction curable resin that cannot be in a B-stage state, refractive index 1.410, specific gravity 1.02. Asahi Kasei Wacker Silicone Co., Ltd.
  • Phenyl silicone resin composition addition reaction curable silicone resin composition, one-stage reaction curable resin that can be in a B-stage state, refractive index 1.565, specific gravity 1.10, preparation example 1.
  • SSX-105 trade name, crosslinked methyl methacrylate particles, light diffusing organic particles, refractive index 1.495, specific gravity 1.20, average particle diameter 5 ⁇ m, manufactured by Sekisui Plastics Co., Ltd.
  • SSX-108 trade name, crosslinked methyl methacrylate particles, light diffusing organic particles, refractive index 1.495, specific gravity 1.20, average particle diameter 8 ⁇ m, product “SSX-110” manufactured by Kasei Kogyo Kogyo Co., Ltd .: trade name, crosslinked methyl methacrylate particles, light diffusing organic particles, refractive index 1.495, specific gravity 1.20, average particle size 10 ⁇ m, manufactured by Sekisui Plastics Kogyo Co., Ltd.
  • SSX-108LXE trade name, crosslinked methyl methacrylate particles, light diffusing organic particles, refractive index 1.545, average particle diameter 8 ⁇ m, specific gravity 1.20, Sekisui Plastics Co., Ltd.
  • SBX-8 trade name , Crosslinked polystyrene particles, light diffusing organic particles, refractive index 1.592, average particle diameter 8 ⁇ m, specific gravity 1.06, manufactured by Sekisui Plastics Co., Ltd.
  • TOSPEARL 2000B trade name, silicone particles, refractive index 1.42 , Specific gravity 1.32, average particle size 6.0 ⁇ m, manufactured by Momentive Performance Materials Japan, Inc.
  • FB-3sdc trade name, silica particles, light diffusing inorganic particles, refractive index 1 45, specific gravity 1.0, average particle diameter 3.4 ⁇ m, manufactured by Denki Kagaku Kogyo Co., Ltd.
  • FB-7sdc trade name, silica particles, light diffusing inorganic particles, refractive index 1.45, specific gravity 1.0, average Particle size 5.8 ⁇ m, manufactured by Denki Kagaku Kogyo Co., Ltd.
  • the optical semiconductor element sealing composition is used for sealing an optical semiconductor element.
  • Optical semiconductor element sealing wavelength conversion sheet (optical semiconductor element sealing sheet) 5
  • Optical semiconductor element sealing sheet 5
  • Optical semiconductor Element 6
  • Substrate 9
  • Sealed Optical Semiconductor Element 10
  • Optical Semiconductor Device 20

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PCT/JP2014/072939 2013-09-06 2014-09-01 光半導体素子封止組成物、光半導体素子封止成形体、光半導体素子封止シート、光半導体装置および封止光半導体素子 WO2015033890A1 (ja)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037562A (ja) * 2014-08-08 2016-03-22 日東電工株式会社 封止シート、その製造方法、光半導体装置および封止光半導体素子
US11353163B2 (en) 2018-12-13 2022-06-07 Signify Holding B.V. Lighting device with sparkle effect

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845812A (zh) * 2016-05-09 2016-08-10 深圳市聚飞光电股份有限公司 一种提高发光均匀性的led荧光胶及封装方法与led
JP6902838B2 (ja) * 2016-09-08 2021-07-14 晶元光電股▲ふん▼有限公司Epistar Corporation 光半導体素子被覆用シート
CN110283561B (zh) * 2019-05-30 2021-09-10 天津德高化成科技有限公司 一种led显示屏贴片式分立器件用封装树脂组合物及其用途
JP7369761B2 (ja) * 2021-12-24 2023-10-26 日東電工株式会社 光半導体素子封止用シート

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294343A (ja) * 2005-04-07 2006-10-26 Mitsubishi Rayon Co Ltd Led面状光源装置
JP2009054995A (ja) * 2007-08-24 2009-03-12 Cree Inc 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ
JP2009084511A (ja) * 2007-10-02 2009-04-23 Sekisui Chem Co Ltd 光半導体用封止シート及び光半導体素子
JP2009239022A (ja) * 2008-03-27 2009-10-15 Lintec Corp 発光モジュール製造用シート、発光モジュール用シート、その製造方法及び発光モジュール
JP2012015175A (ja) * 2010-06-29 2012-01-19 Nitto Denko Corp 蛍光体層および発光装置
WO2013018494A1 (ja) * 2011-07-29 2013-02-07 シャープ株式会社 発光素子、発光装置および発光素子の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294343A (ja) * 2005-04-07 2006-10-26 Mitsubishi Rayon Co Ltd Led面状光源装置
JP2009054995A (ja) * 2007-08-24 2009-03-12 Cree Inc 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ
JP2009084511A (ja) * 2007-10-02 2009-04-23 Sekisui Chem Co Ltd 光半導体用封止シート及び光半導体素子
JP2009239022A (ja) * 2008-03-27 2009-10-15 Lintec Corp 発光モジュール製造用シート、発光モジュール用シート、その製造方法及び発光モジュール
JP2012015175A (ja) * 2010-06-29 2012-01-19 Nitto Denko Corp 蛍光体層および発光装置
WO2013018494A1 (ja) * 2011-07-29 2013-02-07 シャープ株式会社 発光素子、発光装置および発光素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037562A (ja) * 2014-08-08 2016-03-22 日東電工株式会社 封止シート、その製造方法、光半導体装置および封止光半導体素子
US11353163B2 (en) 2018-12-13 2022-06-07 Signify Holding B.V. Lighting device with sparkle effect

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