WO2015033522A1 - Capteur de contrainte - Google Patents

Capteur de contrainte Download PDF

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Publication number
WO2015033522A1
WO2015033522A1 PCT/JP2014/004251 JP2014004251W WO2015033522A1 WO 2015033522 A1 WO2015033522 A1 WO 2015033522A1 JP 2014004251 W JP2014004251 W JP 2014004251W WO 2015033522 A1 WO2015033522 A1 WO 2015033522A1
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WO
WIPO (PCT)
Prior art keywords
arm
vibrating beam
strain sensor
vibrating
sensor according
Prior art date
Application number
PCT/JP2014/004251
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English (en)
Japanese (ja)
Inventor
佳光 池山
中西　努
昌也 競
Original Assignee
パナソニックＩｐマネジメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Publication of WO2015033522A1 publication Critical patent/WO2015033522A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/30—Measuring arrangements characterised by the use of mechanical techniques for measuring the deformation in a solid, e.g. mechanical strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/10—Measuring force or stress, in general by measuring variations of frequency of stressed vibrating elements, e.g. of stressed strings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements

Definitions

  • the present invention relates to a strain sensor that detects strain and load acting on an object.
  • sensors that detect strain, load, and pressure acting on an object are used for various control devices, home appliances, information devices, automobile engines, suspension control, and the like.
  • a conventional pressure sensor includes a pressure sensor element including a piezoelectric vibration piece in a bending vibration mode and a pressure receiving member such as a diaphragm for receiving pressure from the outside, and the pressure sensor element is disposed at both ends in the longitudinal direction of the piezoelectric vibration piece.
  • a pressure sensor element including a piezoelectric vibration piece in a bending vibration mode and a pressure receiving member such as a diaphragm for receiving pressure from the outside
  • the pressure sensor element is disposed at both ends in the longitudinal direction of the piezoelectric vibration piece.
  • Patent Document 1 In the pressure sensor supported by the base end, vibration leakage to the outside of the piezoelectric vibrating piece is suppressed.
  • a strain sensor includes a support substrate having a fixed portion, a vibrating beam connected to the fixed portion, a first arm and a second arm connected to the vibrating beam, and a first arm in the first arm. One end is connected to the first surface of the vibrating beam, the first arm is spaced from the support substrate, the first end of the second arm is connected to the second surface of the vibrating beam, The second arm is separated from the support substrate.
  • the vibrating beam has the first arm and the second arm that are separated from the support substrate, productivity can be improved by adopting a simple configuration. Moreover, vibration leakage can be reduced.
  • Top view of the strain sensor of the first embodiment A-A 'sectional view of the strain sensor shown in FIG. 1A B-B 'sectional view of the strain sensor shown in FIG. 1A
  • Top view of the strain sensor of the second embodiment A-A 'sectional view of the strain sensor shown in FIG. 3A B-B 'sectional view of the strain sensor shown in FIG. 3A
  • Top view of strain sensor of embodiment 3 A-A 'sectional view of the strain sensor shown in FIG. 5A B-B 'sectional view of the strain sensor shown in FIG.
  • FIG. 5A Top view of strain sensor of embodiment 4 A-A 'sectional view of the strain sensor shown in FIG. 6A B-B 'sectional view of the strain sensor shown in FIG. 6A
  • Top view of strain sensor of embodiment 5 A-A 'sectional view of the strain sensor shown in FIG. 7A B-B 'sectional view of the strain sensor shown in FIG. 7A
  • Top view of the strain sensor according to the sixth embodiment A-A 'sectional view of the strain sensor shown in FIG. 8A B-B 'sectional view of the strain sensor shown in FIG. 8A C-C 'sectional view of the strain sensor shown in FIG. 8A
  • FIGS. 1A to 1C are diagrams showing a strain sensor 31 according to the first embodiment.
  • the strain sensor 31 is formed by etching a semiconductor substrate such as silicon and the like, and includes fixed portions 33a and 33b connected to the support substrate 32, and a vibrating beam 34 whose longitudinal ends are supported by the fixed portions 33a and 33b.
  • the first arm 36 having one end (first end) connected to one surface (first surface) 35 in the lateral direction of the vibrating beam 34 and the other side of the vibrating beam 34 in the lateral direction.
  • a second arm 38 having one end (first end) connected to the surface (second surface) 37 is provided.
  • the first arm 36 is perpendicular to the extending direction of the vibrating beam 34 and has a first portion connected to the vibrating beam 34, and the first arm 36 is parallel to the extending direction of the vibrating beam 34, A second portion connected to the first portion;
  • the second arm 38 has the same configuration as that of the first arm 36.
  • “Symmetry” includes “substantially symmetric” including a range of design errors. The same applies hereinafter.
  • the fixing portions 33a and 33b are provided at both ends of the vibrating beam 34.
  • the fixing portions 33a and 33b are not limited to this, and may be formed in a rectangular shape so as to surround the vibrating beam 34. May be.
  • a drive unit 40 is provided at the end of a surface 39 different from one surface (first surface) 35 and the other surface (second surface) 37 of the vibration beam 34, and a detection unit 41 is provided at the center. ing.
  • the drive part 40 and the detection part 41 are arrange
  • the drive part 40 is arrange
  • the drive unit 40 is disposed between a first connection point where the first arm 36 and the vibrating beam 34 are connected and a second connection point where the second arm 38 and the vibrating beam 34 are connected.
  • the drive unit 40 is provided on a lower electrode formed of a metal material such as platinum, a piezoelectric layer provided on the lower electrode and formed of a piezoelectric material such as lead zirconate titanate, and the piezoelectric layer.
  • the upper electrode is made of a metal material such as gold.
  • the detection unit 41 includes a lower electrode formed of a metal material such as platinum, a piezoelectric layer provided on the lower electrode and formed of a piezoelectric material such as lead zirconate titanate,
  • the upper electrode is provided on the body layer and is formed of a metal material such as gold.
  • the strain When strain is generated by an external force applied to the support substrate 32 provided with the strain sensor 31, the strain is transmitted to the vibrating beam 34 through the fixing portions 33a and 33b.
  • a tensile force F is applied to the support substrate 32 in the direction in which the vibrating beam 34 expands and contracts, the stretching force acts on the vibrating beam 34 to develop a stress stiffening effect and the vibrating beam 34 is cured.
  • the vibration frequency of the sensor 31 increases from f to f + ⁇ f. In this way, by measuring the output natural frequency difference ⁇ f, the strain and load acting on the support substrate 32 can be measured with high sensitivity.
  • a compressive force ⁇ F in the longitudinal direction of the vibrating beam 34 is applied to the support substrate 32, a stress stiffening effect that softens the vibrating beam 34 appears in contrast to when a tensile force is applied.
  • the vibration frequency of the sensor 31 decreases from f to f ⁇ f.
  • the strain sensor 31 configured as described above measures a strain generated by an external force applied to the support substrate 32 while applying a voltage to the drive unit 40 and vibrating the vibrating beam 34. For this reason, although the vibration of the vibrating beam 34 leaks from the connecting portion between the vibrating beam 34 and the fixing portions 33a and 33b to the support substrate 32 via the fixing portions 33a and 33b, the detection accuracy is lowered.
  • the first arm 36 and the second arm 38 are provided on the vibration beam 34, whereby vibration leakage to the support substrate 32 can be reduced.
  • FIG. 2 shows the movement of the first arm 36 and the second arm 38 when the vibrating beam 34 is vibrating.
  • the first arm 36 and the second arm 38 are arranged on the concave side of the bending of the vibrating beam 34 which is curved by vibrating according to the vibration of the vibrating beam 34.
  • the arm 38 swings. As shown in FIG. 2, when the vibrating beam 34 is displaced upward, the first arm 36 and the second arm 38 are displaced downward, and when the vibrating beam 34 is displaced downward, the first arm 36 is displaced.
  • the second arm 38 is displaced upward, and the first arm 36 and the second arm 38 vibrate in an opposite phase to the vibration direction of the vibrating beam 34.
  • the vibration of the vibrating beam 34 and the vibrations of the first arm 36 and the second arm 38 cancel each other, so that the vibration of the vibrating beam 34 is not transmitted to the fixed portions 33a and 33b, but is transmitted to the fixed portions 33a and 33b. Vibration leakage can be reduced.
  • the first arm 36 and the second arm 38 are provided in a direction substantially orthogonal to the longitudinal direction of the vibrating beam 34 without bending the central portion of the vibrating beam 34.
  • the effects of the first embodiment can be obtained if the first arm 36 and the second arm 38 vibrate with a component opposite to the direction of movement of the vibrating beam 34.
  • the amplitude of the vibrating beam 34 is maximum at the central portion, and the amplitude becomes smaller as it is closer to the connecting portion to the fixing portions 33a and 33b. Therefore, when the first arm 36 and the second arm 38 are provided at the central portion, Large energy is required to vibrate the first arm 36 and the second arm 38.
  • the first arm 36 and the second arm 38 can be vibrated with less energy by providing the first arm 36 and the second arm 38 in the vicinity of the connecting portion having a small amplitude of the vibrating beam 34. Further, since the first arm 36 and the second arm 38 can be bent, the size can be reduced.
  • a weight may be provided at the other end of the first arm 36 and the second arm 38 of the first embodiment that are not connected to the vibrating beam 34.
  • the same reference numerals as those in the first embodiment may be attached to the same structures as those in the first embodiment. In the following description, differences from the first embodiment will be mainly described.
  • the strain sensor according to the second embodiment is different from the first embodiment in that the third arm and the fourth arm are further provided on the vibrating beam 34.
  • the strain sensor 51 is formed by etching a semiconductor substrate such as silicon, and has a rectangular fixed portion 53 connected to the support substrate 32, a vibrating beam 34 supported at both ends by the fixed portion 53, and the vibrating beam 34.
  • the first arm 36 is connected to one surface (first surface) 35 of the first, and the second arm 38 is connected to the other surface (second surface) 37 of the vibrating beam.
  • a third arm 54 and a fourth arm 55 are provided on the opposite side of the vibrating beam 34 from the side where the first arm 36 and the second arm 38 are provided.
  • the third arm 54 and the fourth arm 55 are separated from the support substrate 32, and the end not connected to the vibrating beam 34 is a free end. It has become.
  • the first arm 36, the second arm 38, the third arm 54, and the fourth arm 55 are preferably separated from the fixing portion 53.
  • the fixing portion 53 has a first part connected to both ends of the vibrating beam 34 and a second part parallel to the extending direction of the vibrating beam 34. The second part is connected to the first part via the slit.
  • the arm 36 and the second arm 38 are preferably located outside. The distance between the free end of the first arm 36 and the free end of the third arm 54 is the same as the distance between the free end of the second arm 38 and the free end of the fourth arm 55.
  • first arm 36 and the fourth arm 55 are arranged so as to be point-symmetric with respect to the center of the vibrating beam 34, and the second arm 38 and the third arm 54 are set with respect to the center of the vibrating beam 34. Are preferably arranged so as to be point-symmetric.
  • the first arm 36, the third arm 54, the second arm 38, and the fourth arm 55 are preferably arranged so as to be line symmetric with respect to the extending direction of the vibrating beam 34.
  • the vibration leakage is reduced by providing the first arm 36 and the second arm 38, but the strain sensor 51 of the second embodiment has a configuration as shown in FIGS. 3A to 3C.
  • the strain sensor 51 of the second embodiment has a configuration as shown in FIGS. 3A to 3C.
  • the third arm 54 and the fourth arm 55 vibration leakage is further reduced.
  • FIGS. 3A to 3C by providing the first arm 36, the second arm 38, the third arm 54, and the fourth arm 55 in the vicinity of both ends of the vibrating beam 34, both ends of the vibrating beam 34 are provided. Since the arm is provided, vibration leakage from both ends of the vibration beam 34 to the fixed portion 53 can be reduced.
  • vibration leakage to the fixed portion 53 is free from the bent portions of the first arm 36, the second arm 38, the third arm 54, and the fourth arm 55 with respect to the vibration beam 34.
  • the length L to the other end, which is the end, was changed with respect to the length of the vibrating beam 34, and evaluation was performed using a dynamic analysis (for example, modal analysis) of the finite element method.
  • the arm length L when the first arm 36, the second arm 38, the third arm 54, and the fourth arm 55 are not provided is set to 0, and vibration leakage to the fixed portion is reduced to L.
  • the length L of the arm is about 22% of the length of the vibrating beam 34.
  • the first arm 36, the second arm 38, the third arm 54, and the fourth arm 55 provide the leakage vibration from the vibrating beam 34 to the fixed portion 53.
  • the reduction effect could be confirmed.
  • the leakage vibration is 0.25, and when the arm length L is about 28%, the leakage vibration is 0.21, which is particularly effective. The effect was greatest when L was about 26%, and vibration leakage to the fixed portion 53 was 0.01 or less. Further, the leakage vibration is about 0.39 when the length L is about 30%.
  • the length L of the arm is preferably about 20% or more and about 30% or less of the length of the vibrating beam 34. Furthermore, the length L of the arm is preferably not less than about 24% and not more than about 28% of the length of the vibrating beam 34.
  • the vibration beam The balance in the longitudinal direction of 34 is improved. If the balance of the weight in the longitudinal direction of the vibrating beam 34 is poor, the vibrating beam 34 vibrates in the rotational direction in addition to the vertical vibration, so that the detection accuracy of the strain sensor 51 is reduced. The vibration leakage can be reduced without lowering.
  • the same structure as that of the first and second embodiments may be denoted by the same reference numerals as those of the first and second embodiments. In the following, differences from the first embodiment and the second embodiment will be mainly described.
  • the strain sensor 61 according to the third embodiment is different from the first embodiment in that both ends of the first arm and the second arm are connected to the vibrating beam.
  • the strain sensor 61 is formed by etching a semiconductor substrate such as silicon, and includes a rectangular fixed portion 53 connected to the support substrate 32, a vibrating beam 34 supported at both ends by the fixed portion 53, and the vibrating beam 34. It has a first arm 66 connected to one surface (first surface) 35 and a second arm 68 connected to the other surface (second surface) 37 of the vibrating beam. The first arm 66 and the second arm 68 are respectively connected to the vibrating beam 34 at both ends, and the central portion is separated from the support substrate 32 and the vibrating beam 34.
  • the third embodiment is different from the first and second embodiments in that both ends are connected to the vibrating beam 34, and therefore both ends of the first arm 66 and the second arm 68 are fixed ends.
  • the strain sensor 61 When the strain is applied to the support substrate 32, the strain sensor 61 expands and contracts in the longitudinal direction, so that the vibration frequency f of the vibration beam 34 changes to f ⁇ ⁇ f. The magnitude of distortion applied to the is detected.
  • the strain sensor 61 according to the third embodiment has both ends connected to the vibrating beam 34. Therefore, strain is applied to the support substrate 32, the vibrating beam 34 expands and contracts, and the natural frequency changes. In this case, both the first arm 66 and the second arm 68 extend and contract in the longitudinal direction of the vibrating beam 34 in the same manner as the vibrating beam 34.
  • the natural frequencies of the first arm 66 and the second arm 68 are designed in accordance with the natural frequency of the vibrating beam 34, the amplitude decreases when the natural frequency deviates greatly from this natural frequency, and the effect of reducing the leakage vibration is obtained. Although it becomes smaller, the natural frequency also changes in the same manner as that of the vibrating beam 34 as the first arm 66 and the second arm 68 expand and contract in the same manner as the vibrating beam 34. For this reason, even when a large strain is applied to the support substrate 32 and the natural frequency of the vibrating beam 34 changes greatly, the amplitude of the first arm 66 and the second arm 68 is not reduced, and the leakage vibration reducing effect is obtained. Obtainable.
  • the same structure as in the first to third embodiments may be assigned the same reference numeral as in the first to third embodiments.
  • parts different from the first to third embodiments will be mainly described.
  • the strain sensor according to the fourth embodiment is different from the first embodiment in that one end (first end) of the vibrating beam 34 is connected to the fixed portion 53 via a slit 75 at a plurality of locations. 3 and different.
  • the strain sensor 61 is formed by etching a semiconductor substrate such as silicon, and both ends of the first arm 66 and the second arm 68 are connected to the side surface of the vibrating beam 34.
  • the first arm 66 and the second arm 68 have the same thickness over the entire length, and are separated from the vibrating beam 34 through the slit 75.
  • one end (first end) of the vibrating beam 34 is connected to the fixed portion 53 through a slit 75 at a plurality of locations. More specifically, since both ends of the vibrating beam 34 are connected to the fixing portion 53 via the slits 75, the end of the vibrating beam 34 is supported at two points. With this configuration, there is an effect that the amount of strain of the vibrating beam 34 can be increased and the sensitivity can be improved.
  • the drive unit 40 is disposed only on one end (first end) side of the first arm 66 and the second arm 68, but the drive unit 40 includes the first arm 66 and the second arm 68. 66 and the second arm 68 may be disposed at both ends.
  • the same reference numerals as those in the first to fourth embodiments may be attached to the same structures as those in the first to fourth embodiments. In the following, parts different from the first to fourth embodiments will be mainly described.
  • the strain sensor according to the fifth embodiment is different from the third embodiment in that both ends of the first arm and the second arm are connected to the side surface of the vibrating beam 34 and the fixing portion 53. Yes.
  • the strain sensor 71 is formed by etching a semiconductor substrate such as silicon, and both ends of the first arm 76 and the second arm 78 are connected to the side surface of the vibrating beam 34 and the fixing portion 53.
  • the first arm 76 and the second arm 78 have the same thickness over the entire length, and are separated from the vibrating beam 34 via the slit 75. With this configuration, there is an effect that the amount of strain of the vibrating beam 34, the first arm 76, and the second arm 78 can be increased, and the sensitivity can be improved.
  • the driving unit 40 is arranged at the center of the vibrating beam 34 and the detecting unit 41 is arranged at the end of the vibrating beam 34. Note that the lead-out wiring of the drive unit 40 may extend toward the fixed unit 53.
  • the drive unit 40 is disposed at the end of the first arm 76 and the detection unit 41 is disposed at the center of the first arm 76. Note that the lead-out wiring of the detection unit 41 may extend toward the fixed unit 53.
  • the drive unit 40 is disposed at the end of the second arm 78 and the detection unit 41 is disposed at the center of the second arm 78. Note that the lead-out wiring of the detection unit 41 may extend toward the fixed unit 53.
  • the arrangement relationship between the drive unit 40 and the detection unit 41 may be reversed. That is, the drive unit 40 is disposed at the end of the vibrating beam 34, the center of the first arm, and the center of the second arm, the detection unit 41 is disposed at the center of the vibrating beam 34, the end of the first arm, It may be arranged at the end of the two arms.
  • the same reference numerals as those of the first to fifth embodiments may be attached to the same structures as those of the first to fifth embodiments. In the following, parts different from the first to fifth embodiments will be mainly described.
  • the strain sensor according to the sixth embodiment has a structure in which a fixing portion 53 parallel to the first arm and the second arm is arranged side by side with the first arm and the second arm. This is different from the fifth embodiment.
  • the strain sensor 71 is formed by etching a semiconductor substrate such as silicon, and both ends of the first arm 76 and the second arm 78 are connected to the side surface of the vibrating beam 34 and the fixing portion 53. It is preferable that the first arm 76 and the second arm 78 have the same thickness over the entire length, and are separated from the vibrating beam 34 via the slit 75.
  • the fixing portion 53 parallel to the first arm 76 and the second arm 78 is arranged side by side with the first arm 76 and the second arm 78.
  • the fixing portion 53 is preferably disposed outside the first arm 76 and the second arm 78 through the slit 75.
  • the fixing portion parallel to the first arm 76 and the second arm 78 in terms of increasing the amount of strain of the vibrating beam 34 and improving the sensitivity.
  • the driving unit 40 is arranged at the center of the vibrating beam 34 and the detecting unit 41 is arranged at the end of the vibrating beam 34. Note that the lead-out wiring of the drive unit 40 may extend toward the fixed unit 53.
  • the drive unit 40 is disposed at the end of the first arm 76 and the detection unit 41 is disposed at the center of the first arm 76. Note that the lead-out wiring of the detection unit 41 may extend toward the fixed unit 53.
  • the drive unit 40 is disposed at the end of the second arm 78 and the detection unit 41 is disposed at the center of the second arm 78. Note that the lead-out wiring of the detection unit 41 may extend toward the fixed unit 53.
  • the arrangement relationship between the drive unit 40 and the detection unit 41 may be reversed. That is, the drive unit 40 is disposed at the end of the vibrating beam 34, the center of the first arm, and the center of the second arm, the detection unit 41 is disposed at the center of the vibrating beam 34, the end of the first arm, It may be arranged at the end of the two arms.
  • the strain sensor of the present invention reduces the leakage of vibration from the vibrating beam to the fixed part of the support substrate, and can detect the stress applied to the support substrate with high accuracy. It is useful for various control equipment, information equipment control, automobile engine control, suspension control, and the like.

Abstract

La présente invention concerne un premier capteur de contrainte comprenant: un substrat porteur comprenant une section immobile; une poutre oscillante reliée à la section immobile; et un premier bras et un deuxième bras reliés à la poutre oscillante. La première extrémité du premier bras est reliée à la première surface de la poutre oscillante, le premier bras est séparé du substrat porteur, la première extrémité du deuxième bras est reliée à la deuxième surface de la poutre oscillante, et le deuxième bras est séparé du substrat porteur. Par ailleurs, un deuxième capteur de contrainte comprend: une poutre oscillante; une section immobile reliée à la poutre oscillante; un premier bras dont la première extrémité est reliée à la première surface de la poutre oscillante et dont la deuxième extrémité est une extrémité libre; et un deuxième bras dont la première extrémité est reliée à la deuxième surface de la poutre oscillante et dont la deuxième extrémité est un extrémité libre.
PCT/JP2014/004251 2013-09-06 2014-08-20 Capteur de contrainte WO2015033522A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-184636 2013-09-06
JP2013184636 2013-09-06

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WO2015033522A1 true WO2015033522A1 (fr) 2015-03-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114688951A (zh) * 2022-03-30 2022-07-01 湖南腾智机电有限责任公司 一种隔膜泵膜片最大变形定位工装
WO2022266780A1 (fr) * 2021-06-23 2022-12-29 Digi Sens Holding Ag Pont vibrant pour capteur à corde vibrante et capteur à corde vibrante

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763625A (ja) * 1993-08-20 1995-03-10 Mettler Toledo Ag 力測定用ストリング
JP2006518846A (ja) * 2003-02-05 2006-08-17 ブルーネル ユニバーシティ 共振センサーアセンブリー
JP2011164042A (ja) * 2010-02-15 2011-08-25 Panasonic Corp 物理量センサ
JP2012057999A (ja) * 2010-09-07 2012-03-22 Panasonic Corp 歪センサ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763625A (ja) * 1993-08-20 1995-03-10 Mettler Toledo Ag 力測定用ストリング
JP2006518846A (ja) * 2003-02-05 2006-08-17 ブルーネル ユニバーシティ 共振センサーアセンブリー
JP2011164042A (ja) * 2010-02-15 2011-08-25 Panasonic Corp 物理量センサ
JP2012057999A (ja) * 2010-09-07 2012-03-22 Panasonic Corp 歪センサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022266780A1 (fr) * 2021-06-23 2022-12-29 Digi Sens Holding Ag Pont vibrant pour capteur à corde vibrante et capteur à corde vibrante
CN114688951A (zh) * 2022-03-30 2022-07-01 湖南腾智机电有限责任公司 一种隔膜泵膜片最大变形定位工装

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