WO2015015623A1 - 半導体装置及び電力変換装置 - Google Patents
半導体装置及び電力変換装置 Download PDFInfo
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- WO2015015623A1 WO2015015623A1 PCT/JP2013/070943 JP2013070943W WO2015015623A1 WO 2015015623 A1 WO2015015623 A1 WO 2015015623A1 JP 2013070943 W JP2013070943 W JP 2013070943W WO 2015015623 A1 WO2015015623 A1 WO 2015015623A1
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- circuit
- switch element
- power supply
- level shift
- supply voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/131—Digitally controlled
Definitions
- the present disclosure relates to a semiconductor device, and is applicable to, for example, a power conversion device including a power device and a semiconductor device that drives the power device.
- power devices are used as power supplies for consumer devices such as inverters for railway vehicles, hybrid / electric vehicles, inverter devices for air conditioners, and personal computers.
- the power conversion efficiency of power devices improves the power conversion efficiency of infrastructure systems and consumer devices. Contributes greatly to improvement. Improving power conversion efficiency means that energy resources necessary for system operation can be reduced. In other words, carbon dioxide emissions, that is, environmental load can be reduced. For this reason, research and development for improving the performance of power devices has been actively conducted by each company.
- power devices are made of silicon (Si), as is the case with large-scale integrated circuits (LSIs).
- LSIs large-scale integrated circuits
- the element structure of the diode or switch element and the impurity concentration profile are optimized and low.
- Developments for realizing characteristics such as on-resistance (Ron), high current density, and high withstand voltage have been actively conducted.
- a synchronous rectification type converter device and an inverter device which is a DC / AC conversion device are generally used.
- a switching element composed of a power device and two free-wheeling diodes are connected in series between a power source on the high voltage side (upper arm) and a power source on the low voltage side (lower arm). It is.
- the DC level at the front stage of the inverter device is converted to the AC level and supplied to a load circuit such as an AC insulation transformer and a motor at the rear stage.
- the gate drive circuit includes a dead time generation circuit in order to control the upper and lower arm switches to be alternately turned on and off, that is, to prevent the upper and lower arm switch elements from being simultaneously turned on.
- the dead time is set to a sufficiently long time, so that the upper and lower switch elements do not turn on simultaneously.
- the conduction loss component of the diode increases, which may deteriorate the power conversion efficiency of the inverter device or the converter device.
- the switch elements of the upper and lower arms may be turned on at the same time, and a very large through current may flow from the high potential power source to the low potential power source, destroying the switch elements of the upper and lower arms. There is. For this reason, minimizing the dead time optimally in the inverter device and the converter device plays an important role in reducing the loss of the power conversion device.
- the on-resistance of the main switch element is as small as several m ⁇ and the reverse conduction voltage of the main switch element is lower than the on-voltage of the diode during recirculation (application with a power supply voltage of several tens of volts), the dead time Loss reduction effect by minimization is great.
- Patent Document 1 discloses a configuration including level shift circuits in both the high-side driver and the low-side driver in order to optimize dead time in a synchronous rectification type DC / DC converter.
- a control signal operating at a low potential (eg, around 15V) amplitude on the gate drive circuit input side is converted to a high potential (eg, around 300V), and (2) the converted high side gate drive signal
- the circuit delay time when generating the low-side gate drive signal and the circuit delay time when generating the low-side gate drive signal are made as equal as possible to the process / voltage / temperature variation dependency of both delay times.
- An object of the present disclosure is to minimize the dead time when turning on and off the switch elements of the upper and lower arms in a semiconductor device that drives a power device, and to reduce the loss of the power converter.
- a semiconductor device used for a connected power converter includes a first drive circuit that drives a first switch element, a second drive circuit that drives a second switch element, a first level shift circuit, and a second level shift circuit A circuit.
- the first drive circuit is connected to a third power supply voltage that is a predetermined potential higher than the source potential of the first switch element and a source potential.
- the second drive circuit is connected to a fourth power supply voltage and a second power supply voltage that are higher by a predetermined potential with respect to the second power supply voltage.
- the power supply potentials input to the first level shift circuit and the second level shift circuit are the third power supply voltage and the second power supply voltage.
- the semiconductor device is used in a power conversion device, the conversion efficiency during power conversion can be improved.
- FIG. 1 is a block diagram of a semiconductor device according to Example 1.
- FIG. FIG. 3 is a circuit diagram of a level shift circuit according to the first embodiment.
- FIG. 3 is a circuit diagram of a delay circuit according to the first embodiment.
- FIG. 6 is a diagram illustrating operation timing of the semiconductor device according to the first embodiment. It is the schematic which shows the structure of the power converter device which concerns on Example 2.
- FIG. It is the top view which mounted the switch element and free-wheeling diode of the power converter device which concern on Example 2 in the power module.
- It is the schematic which shows the structure of the power converter device which concerns on Example 3.
- FIG. 7 is a plan view showing a schematic configuration of a SiC-MOSFET according to Example 4.
- FIG. 7 is a cross-sectional view showing a schematic configuration of a SiC-MOSFET according to Example 4.
- FIG. It is sectional drawing which shows the structural example of each element transistor in the active element area
- FIG. 10 is a plan view of a SiC-MOSFET according to Example 4 mounted on a package.
- FIG. 10 is a cross-sectional view of a SiC-MOSFET according to Example 4 mounted on a package. It is a figure explaining the semiconductor device concerning an embodiment.
- FIG. 11 illustrates the semiconductor device according to the embodiment.
- Semiconductor device 110 according to the embodiment is used for power conversion device 101.
- the power conversion device 101 includes a first switch element SW1 having a drain D1 connected to a first power supply voltage (VPP) and a second switch element SW2 having a source S2 connected to a second power supply voltage (VSS).
- the source S1 of the first switch element SW1 and the drain D2 of the second switch element SW2 are electrically connected.
- the semiconductor device 110 includes a first drive circuit 112H that drives the first switch element SW1, a second drive circuit 112L that drives the second switch element SW2, a first level shift circuit 104H, and a second level shift circuit 104L. Are provided.
- the first level shift circuit 104H converts the voltage level of the input signal (IU) for the first drive circuit 112H and outputs the signal (OU), and the second level shift circuit 104L receives the input signal.
- the voltage level of (ID) is converted for the second drive circuit 112L and a signal (OD) is output, and the first drive circuit 112H has a predetermined potential with reference to the source potential (VS) of the first switch element SW1.
- the third power supply voltage (VB) and the source potential (VS) having a high potential are connected to each other.
- the second drive circuit SW2 is connected to a fourth power supply voltage (VCC) and a second power supply voltage (VSS) that are higher by a predetermined potential with respect to the second power supply voltage (VSS).
- the power supply potentials input to the first level shift circuit 104H and the second level shift circuit 104L are the third power supply voltage (VB) and the second power supply voltage (VSS).
- the semiconductor device 101 preferably includes a delay circuit 107 for finely adjusting the dead time. More preferably, the delay circuit 107 is disposed between the second level shift circuit 104L and the second drive circuit 112L. More preferably, the delay circuit 107 includes a circuit for generating a plurality of delay times, and the plurality of delay times are selected using an external input signal.
- the power conversion device 101 includes a first free-wheeling diode Di1 connected in parallel to the first switch element SW1 and a second free-wheeling diode Di2 connected in parallel to the second switch element SW2.
- the dead time can be optimized and the conversion efficiency at the time of power conversion can be improved.
- the constituent elements are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Yes.
- the shape and the like of the component are substantially excluding unless specifically stated or considered otherwise in principle. It shall include those that are approximate or similar to. The same applies to the above numerical values and ranges.
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- MISFET Metal Insulator Semiconductor Field Effect Transistor
- a non-oxide film is not excluded as a gate insulating film.
- a p-channel MOS transistor PMOS transistor
- NMOS transistor n-channel MOS transistor
- FIG. 1 is a block diagram of a semiconductor device according to the first embodiment.
- the semiconductor device 10 includes a gate drive control circuit (GDCTL) 11, an upper arm gate drive circuit (G / D) 12H, and a lower arm gate drive circuit (G / D) 12L.
- the semiconductor device 10 is a semiconductor device that drives a switch element constituted by a power device using Si, SiC, GaN, or the like.
- the semiconductor device 10 is formed on one Si substrate or a plurality of Si substrates.
- the semiconductor device 10 also has a circuit that receives a current from a sense terminal, which will be described later, and monitors the current of the switch element.
- the high-side Schmitt trigger circuit 1H and the resistor R1 are circuits for transferring a stable output level to the high-side level shift circuit 2H even when HIN fluctuates.
- the high side level shift circuit 2H converts the output level of HIN into a low voltage side power supply level (VCC) (for example, 15V) applied to the terminal A11.
- VCC low voltage side power supply level
- the high-side Schmitt trigger circuit 1H operates with a power supply voltage (VDD) applied to the terminal A3 and a low-voltage side source level (VSS) applied to the terminal A4.
- VDD power supply voltage
- VSS low-voltage side source level
- LIN low-side input signal
- LIN low-side input signal
- the low-side Schmitt trigger circuit 1L and the resistor R2 are circuits for transferring a stable output level to the low-side level shift circuit 2L even when LIN fluctuates.
- the low-side level conversion circuit 2L converts the output level of LIN into a low-voltage side power supply level (VCC).
- VCC low-voltage side power supply level
- the low-side Schmitt trigger circuit 1L operates with a power supply voltage (VDD) applied to the terminal A3 and a low-voltage side source level (VSS) applied to the terminal A4.
- VDD power supply voltage
- VSS low-voltage side source level
- the one-shot pulse generation circuit (PULSE GEN) 3 generates one-shot pulse signals (IU0, IU1) at the rise and fall of the output of the high-side level shift circuit 2H.
- the one-shot pulse generation circuit 3 generates one-shot pulse signals (ID0, ID1) at the rising edge and falling edge of the output of the low-side level shift circuit 2L.
- the one-shot pulse generation circuit 3 operates at a low voltage side power supply level (VCC) applied to the terminal A11 and a low voltage side source level (VSS) applied to the terminal A4.
- VCC low voltage side power supply level
- VSS low voltage side source level
- the high-side high voltage level shift circuit (LVSU) 4H applies the output level of the one-shot pulse signal (rising (IU0) / falling (IU1)) to the terminal A8. It converts into the level of the high voltage side power supply level (VB) and the low voltage side source level (VSS) applied to the terminal A10.
- the high voltage side power supply level (VB) is set to a voltage (VS + 15V), for example, 15V added with reference to the high voltage side source level (VS) of the gate drive circuit 12H for the upper arm, and the gate drive circuit (G / D) 12H high-side power supply voltage. Details of the high side high voltage level shift circuit 4H will be described later.
- the output signals (OU0, OU1) of the high side high voltage level shift circuit 4H are input to the high side RS latch circuit 6H via the high side pulse filter (PULSE FILTER) 5H.
- the one-shot pulse signal (for rising) (OU0) from the high-side high voltage level shift circuit 4H becomes the set input to the high-side RS latch circuit 6H, and the one-shot pulse signal (falling) from the high-side high voltage level shift circuit 4H.
- (OU1) is a reset input of the high-side RS latch circuit 6H.
- the pulse filter 5H removes indefinite signals other than the predetermined control signal.
- the output signal of the high side RS latch circuit 6H is transferred to the gate drive circuit 12H for the upper arm.
- the gate drive circuit 12H operates with the output signal of the high side RS latch circuit 6H as an input, and outputs an upper arm switch control signal (HO) to the terminal A9.
- / R reset input
- / S set input
- / Q output
- active low Active Low
- the high-side voltage detection protection circuit (UV DETECT) 8H monitors the high-voltage side power supply level (VB), and when the high-voltage side power supply level (VB) decreases, performs a reset input to the high-side RS latch circuit 6H.
- the switch element is protected via the upper arm gate drive circuit 12H or the like.
- the upper arm gate drive circuit 12H outputs a high level upper arm switch control signal (HO) when the input signal is at a low level, and a low level upper arm switch control signal (HO) when the input signal is at a high level. HO) is output.
- the high side pulse filter 5H, the high side RS latch circuit 6H, the high side voltage detection protection circuit 8H, and the gate drive circuit 12H for the upper arm are applied to the high voltage side power supply level (VB) applied to the terminal A8 and the terminal A10.
- the high voltage side source level (VS) is operated.
- the low-side high voltage level shift circuit (LVSD) 4L converts the output level of the one-shot pulse signal (rising (ID0) / falling (ID1)) to the high-voltage power supply level ( VB) and low voltage side source level (VSS). Details of the low-side high voltage level shift circuit 4L will be described later.
- the output signals (OD0, OD1) of the low-side high voltage level shift circuit 4L are input to the low-side RS latch circuit 6L via the low-side pulse filter (PULSE FILTER) 5L.
- the one-shot pulse signal (for rising) (OD0) from the low-side high voltage level shift circuit 4L becomes the set input to the low-side RS latch circuit 6L, and the one-shot pulse signal (falling) from the low-side high voltage level shift circuit 4L.
- (OD1) is a reset input of the low-side RS latch circuit 6L.
- the low-side pulse filter 5L removes indefinite signals other than the predetermined control signal.
- the delay circuit (DELAY) 7 operates with the output signal (Din) of the low-side RS latch circuit 6L as an input, and transfers the output signal to the gate drive circuit 12L for the lower arm.
- the gate drive circuit 12L operates with the output signal (Dout) of the delay circuit 7 as an input, and outputs a lower arm switch control signal (LO) to the terminal A12.
- / R reset input
- S set input
- Q output
- the low-side voltage detection protection circuit (UV DETECT) 8L monitors the low-voltage side power supply level (VCC), and performs a reset input to the low-side RS latch circuit 6L when the low-voltage side power supply level (VCC) decreases. Further, the output of the AND circuit 9 is set to a low level to protect the switch element via the lower arm gate drive circuit 12L and the like.
- the lower arm gate drive circuit 12L outputs a high level lower arm switch control signal (LO) when the input signal is at a high level, and a low level lower arm switch control signal (LO) when the input signal is at a low level. LO) is output.
- the delay circuit 7 delays the output signal of the low-side RS latch circuit 6L and transfers the output signal to the logical product circuit 9 in the subsequent stage, and adjusts the so-called dead time time for preventing the upper and lower arm switch elements from being simultaneously turned on. To do.
- the circuit configuration of the delay circuit 7 is not particularly limited, but may be configured by, for example, a plurality of stages of CMOS inverting circuits. Details of the delay circuit 7 will be described later.
- the low-side pulse filter 5L, the low-side RS latch circuit 6L, the delay circuit 7, the low-side voltage detection protection circuit 8L, and the lower arm gate drive circuit 12L include a low-voltage side power supply level (VCC) applied to the terminal A11 and It operates at the high voltage side source level (VSS) applied to the terminal A4.
- VCC low-voltage side power supply level
- VSS high voltage side source level
- FIG. 2 is an example showing circuit configurations of a high side high voltage level shift circuit (LVSU) and a low side high voltage level shift circuit (LVSD).
- the high side high voltage level shift circuit 4H and the low side high voltage level shift circuit 4L include a plurality of high voltage NMOS transistors NM and a plurality of resistors R.
- the sources of the high voltage NMOS transistors NM1 and NM2 constituting the high side high voltage level shift circuit 4H are connected to the low voltage side source level (VSS).
- the resistors R3 and R4 are connected to the high voltage side power supply level (VB) and the output nodes N1 and N2.
- the rising signal of the gate drive circuit 12H on the upper arm side is generated by inputting IU0, which is an output signal from the one-shot pulse generation circuit 3, to the high side high voltage level shift circuit 4H.
- the output nodes N1 and N2 may operate at a high potential (for example, about 300 V)
- the gate drive signal is normally generated without destroying the elements by applying the high voltage NMOS transistors NM1 and NM2.
- the IU1 which is the control signal from the one-shot pulse generation circuit 3 is input to the high voltage level shift circuit 4H, the falling signal is changed. Generated.
- the drains of the high voltage NMOS transistors NM3 and NM4 constituting the low side high voltage level shift circuit 4L are connected to the high voltage side power supply level (VB), and the resistors R5 and R6 are connected to the low voltage side source level (VSS). Is done.
- the source sides of the high voltage NMOS transistors NM3 and NM4 are connected to output nodes N3 and N4.
- the rising signal of the lower arm side gate drive circuit 12L is input to the low side high voltage level shift circuit 4L as the output signal ID0 from the one-shot pulse generation circuit 3. Is generated.
- the output node N3 rises to about the same level as the low voltage side power supply level (VCC) of the lower arm side gate drive circuit 12L.
- VCC low voltage side power supply level
- the signal is input to the circuit and becomes a rising signal of the gate drive circuit 12L on the lower arm side.
- the falling signal is changed. Generated.
- the power supply potentials input to the high side high voltage level shift circuit 4H and the low side high voltage level shift circuit 4L are a high voltage side power level (VB) and a low voltage side source level (VSS).
- the high side high voltage level shift circuit 4H and the low side high voltage level shift circuit 4L can operate at the same power supply level.
- the temperature dependence can be made equal on the high side and the low side. In other words, since the designed dead time tde0 can be reliably ensured, the dead time can be minimized, and the conversion efficiency of the power converter can be improved.
- the high voltage input level of the high voltage level shift circuit is VB, but it goes without saying that it may be VPP (see FIG. 5) which is the voltage of the high potential power supply 54 of the switch element.
- FIG. 3 shows a circuit configuration of the delay circuit of FIG.
- FIG. 4 shows a timing chart of the gate control circuit and the gate drive circuit.
- the delay circuit 7 can connect so-called CMOS inversion circuits in multiple stages to generate desired delay times (tde0, tde1, tde2). Further, a plurality of delay times can be appropriately selected by selectively setting the delay time selection signals (TI0, TI1, TI2) to a high level.
- the delay circuit 7 includes a delay generation circuit 34 in which six inverting circuits are connected, a delay generation circuit 35 in which four inverting circuits are connected, and a delay generation circuit 36 in which two inverting circuits are connected.
- the delay time selection signal (TI0) When the delay time selection signal (TI0) is at the high level, the inverted AND (NAND) circuit 31 and the three-state buffer 37 are selected, and the signal (Din) is delayed by the delay means (tde0) by the delay means 34, (Dout) is output.
- the delay time selection signal (TI1) is at a high level, the inverted AND (NAND) circuit 32 and the three-state buffer 38 are selected, and the signal (Din) is delayed by the delay means 35 by the delay time (tde1).
- the delay time selection signal (TI2) When the delay time selection signal (TI2) is at the high level, the NAND circuit 33 and the three-state buffer 39 are selected, and the signal (Din) is delayed by the delay time (tde2) by the delay generation circuit 36.
- the number of inversion circuits constituting the delay generation circuit is not limited to six, four, and two stages, and may be changed according to a desired delay time. Further, the number of delay generation circuits is not limited to three, and may be smaller or larger than three.
- the designed dead time (tde0) can be finely adjusted by adopting the configuration as shown in FIG. 1 in which the delay circuit of FIG. 3 is combined with the high voltage level shift circuits 4H and 4L of FIG. That is, it is possible to prevent the switch elements on the high side and the low side from being turned on simultaneously, and the dead time can be minimized.
- the configuration of the delay generation circuit is a simple inversion circuit.
- the rise time of the gate drive signal is adjusted appropriately using an inversion OR circuit (NOR) or an inversion AND circuit (NAND).
- NOR inversion OR circuit
- NAND inversion AND circuit
- a delay generation circuit and a delay generation circuit for adjusting the fall time are separately formed, and a desired delay time can be freely designed by using a selection signal similar to the delay time selection signals (TI0, TI1, TI2). Needless to say.
- the one-shot pulse generation circuit 3 detects rising and falling of the high-side input signal (HIN), and outputs an input signal (IU0) and an input signal (IU1) that are pulse signals. Similarly, the rising and falling of the low-side input signal (LIN) are detected, and the input signal (ID0) and the input signal (ID1) which are pulse signals are output.
- the respective input signals (IU0, IU1) are converted into output signals (OU0, OU1) having appropriate potentials via the high side high voltage level shift circuit 4H.
- the output signals (OU0, OU1) are signals in which the high level and the low level of the input signals (IU0, IU1) are inverted.
- the output signals (OU0, OU1) drive the upper arm side gate drive circuit 12H via the high side pulse filter 5H and the high side RS latch circuit 6H to generate the upper arm switch control signal (HO). Output.
- the respective input signals (ID0, ID1) are converted into output signals (OD0, OD1) having appropriate potentials via the low-side high voltage level shift circuit 4L. Thereafter, the output signals (OD0, OD1) become the input signal (Din) via the low-side pulse filter 5L and the low-side RS latch circuit 6L.
- the delay circuit 7 outputs a signal (Dout) delayed by a delay time (tdelay), drives the gate drive circuit 12L on the lower arm side, and outputs a lower arm switch control signal (LO).
- the on / off timing of the upper arm switch control signal (HO) and the lower arm switch control signal (LO) cannot be minimized as shown by td1 in the prior art, and an excessive margin occurs. It was. However, if the technique of this embodiment is used, the delay time (tdelay) is finely adjusted by the delay circuit 7 and can be appropriately minimized as the final dead time (td0).
- the delay generation period from the input signal (Din) to the output signal (Dout) of the delay circuit 7 is the timing at which the upper arm switch control signal (HO) transitions from the high level to the low level, or transitions from the low level to the high level. You should avoid timing.
- the switch element (main switch) connected to the high voltage side power supply level (VB) and the high voltage side source level (VS) is turned on / off.
- noise may flow into the operating power supply level of the delay circuit 7 and its potential may fluctuate.
- the delay circuit 7 may not operate with a desired delay time. For this purpose, as shown in FIG.
- the delay circuit 7 may be disposed downstream of the low-side high voltage level shift circuit 4L and before the gate drive circuit 12L on the lower arm side.
- the delay circuit 7 is preferably arranged as close as possible to the gate drive circuit 12L on the lower arm side.
- FIG. 5 is a schematic diagram illustrating the configuration of the power conversion apparatus according to the second embodiment.
- the power conversion device 51 includes a three-phase inverter device 52 using the semiconductor device 10 (the gate drive circuits 12H and 12L and the gate drive control circuit 11) according to the first embodiment, a load circuit (LOAD) 53 such as a motor, a power supply 54, and a capacity. It has C0.
- LOAD load circuit
- each of the switch elements SWu, SWv, SWw, SWx, SWy, SWz is an n-channel SiC-MOSFET, and a built-in diode (body diode) is formed between the source and drain.
- the built-in diode operates as a freewheeling diode.
- each of the switch elements SWu, SWv, SWw, SWx, SWy, SWz has a sense terminal for monitoring the current flowing through the SiC-MOSFET.
- the free-wheeling diodes Diu, Div, Diw, Dix, Diy, Diz are connected between the sources and drains of the switch elements SWu, SWv, SWw, SWx, SWy, SWz, respectively.
- the switch elements SWu, SWv, SWw are arranged on the upper arm side, and the switch elements SWx, SWy, SWz are arranged on the lower arm side.
- the switch elements SWu and SWx are for the U phase
- the switch elements SWv and SWy are for the V phase
- the switch elements SWw and SWz are for the W phase.
- the gate drive circuits GDu and GDx are circuit units that control and drive the switch elements SWu and SWx, respectively, in the semiconductor device 10 as shown in FIG.
- the gate drive circuits GDv and GDy are circuit units that control and drive the switch elements SWv and SWy, respectively, in the semiconductor device 10.
- the gate drive circuits GDw and GDz are circuit units that control and drive the switch elements SWw and SWz, respectively, in the semiconductor device 10.
- each semiconductor device 10 is provided with a common circuit on the upper arm side and the lower arm side in the gate drive control circuit 11 as shown in FIG.
- a DC power supply 54 and a capacitor C0 are connected between one end (drain node) PT of the upper arm side switch element and one end (source node) NT of the lower arm side switch element.
- a voltage (VPP) is applied between the drain node PT and the source node NT.
- Each gate drive circuit appropriately drives on / off of the corresponding switch element, thereby generating three-phase (U-phase, V-phase, W-phase) AC signals having different phases from the VPP that is a DC signal.
- the load circuit 53 is appropriately controlled by this three-phase (U-phase, V-phase, W-phase) AC signal.
- the switch element SWu on the upper arm side changes to the on state while the switch element SWx on the lower arm side is off.
- the gate drive circuit and the gate control circuit for driving the switch elements SWu and SWx they are affected by the operating temperature of the inverter, and there is a possibility that the timing for turning on and off the switch elements is shifted.
- a through current may flow from the high potential side to the low potential side of the three-phase inverter device 52, which may cause an increase in loss due to heat generation or the like.
- the gate drive control circuit 11 and the gate drive circuits 12H and 12L according to the first embodiment have little variation in delay time of the level shift circuit that is a main circuit that generates the dead time. Thereby, the dead time of the upper and lower switch elements can be reliably ensured. In other words, a highly reliable and stable power conversion operation can be realized. In particular, such a three-phase inverter device often operates with high power, and the damage caused by a through current due to a decrease in dead time margin and an increase in loss due thereto can be significant.
- the loss reduction of the inverter device can be achieved.
- a beneficial effect such as being possible is obtained.
- FIG. 6 shows an example of a power module on which the switch element and the free wheel diode of the three-phase inverter device of FIG. 5 are mounted.
- the power module PM includes a positive side connection terminal PT, a negative side connection terminal NT, U-phase upper arm switch groups SWU0 and SWU1, U-phase lower arm switch groups SWX0 and SWX1, and an U-phase upper arm reflux diode. Diu and a U-phase lower arm free-wheeling diode Dix.
- the power module PM has an upper arm drain terminal UD to which the positive side connection terminal PT, the drain pads of the U-phase upper arm switch groups SWU0 and SWU1, and the cathode of the U-phase upper arm reflux diode Diu are connected.
- the power module PM has an upper arm source terminal US to which the source pads of the U-phase upper arm switch groups SWU0 and SWU1 and the anode of the U-phase upper arm reflux diode Diu are connected.
- the power module PM has a lower arm drain terminal XD to which the drain pads of the U-phase lower arm switch groups SWX0 and SWX1 and the cathode of the U-phase lower arm reflux diode Dix are connected.
- the power module PM has a lower arm source terminal XS to which the source pads of the U-phase lower arm switch groups SWX0 and SWX1 and the anode of the U-phase lower arm reflux diode Dix are connected.
- the power module PM has a connection terminal MU that connects the upper arm source terminal US and the lower arm drain terminal XD.
- the power module PM includes gate control terminals GSIG0 and GSIG1, sense control terminals SESIG0 and SESIG1, a U-phase output terminal U, a V-phase output terminal V, and a W-phase output terminal W.
- Gate control terminals GSIG0 and GSIG1 are connected to gate pads of U-phase upper arm switch groups SWU0 and SWU1 and U-phase lower arm switch groups SWX0 and SWX1.
- the sense control terminals SESIG0 and SESIG1 are connected to the sense pads of the U-phase upper arm switch groups SWU0 and SWU1.
- U-phase output terminal U is connected to lower arm drain terminal XD.
- FIG. 6 shows a configuration in which four switch elements of the upper and lower arms are connected in parallel. Moreover, the example which divided
- the wiring parasitic impedance shift can be kept relatively small.
- the number of U-phase upper arm switch elements is eight, whether to perform four-division control or eight-division control may be selected in consideration of the mounting form.
- the gate driving circuit and the gate control circuit shown in the first embodiment are used, the effects described in the first and second embodiments can be obtained.
- FIG. 7 is a schematic diagram illustrating the configuration of the power conversion apparatus according to the third embodiment.
- An AC / DC power supply device 71 that is a power conversion device includes an inverter device (DCAC) 72 that uses the gate drive circuit and the gate drive control circuit of the first embodiment, and an AC input (for example, AC 200 V) as a line filter (LINFIL) 73.
- DCAC inverter device
- LINFIL line filter
- the noise is removed at, and the AC voltage is converted into a DC voltage (AC / DC) via a rectifier circuit (for example, a diode bridge and an output capacitor) (RCT) 74.
- the DC level is boosted to, for example, about 400 V by a booster circuit (PFC) 75.
- DCAC inverter device
- LINFIL line filter
- PFC booster circuit
- the booster circuit 75 includes a coil L, a chopper diode Di, a main switch element Q1 (two in parallel), a main switch drive circuit GDR, and a stabilization capacitor C1. Since the control method of the booster circuit 75 is a general control method, description thereof is omitted here.
- the DC level of about 400V from the booster circuit 75 is converted to an AC level by the inverter device 72, and AC / AC conversion (for example, AC400V ⁇ AC10V) is performed by the transformer TR.
- AC / AC conversion for example, AC400V ⁇ AC10V
- an AC signal obtained from the secondary coil side of the transformer TR is converted into, for example, DC10V, DC100A, etc. by an AC / DC conversion circuit (ACDC) 76 and output.
- the inverter device 72 includes, for example, a so-called full bridge circuit including four switch elements Q2, Q3, Q4, and Q5 and a gate drive control circuit (GDCTL) 77 thereof.
- GDCTL gate drive control circuit
- each of the switching elements Q2 to Q5 may have a configuration in which a plurality of chips are connected in parallel. In such a configuration example, by applying the method of the first embodiment (the gate drive circuit 12 and the gate drive control circuit 11) to the gate drive control circuit 77 of the inverter device 72,
- FIGS. 8A and 8B are diagrams illustrating a schematic configuration of the SiC-MOSFET according to the fourth embodiment.
- 8A is a plan view showing a schematic configuration of the SiC-MOSFET
- FIG. 8B is a cross-sectional view showing a schematic configuration between A and A ′ in FIG. 8A.
- the SiC-MOSFET 81 constitutes a switch element used in the power conversion devices of the second and third embodiments.
- the edge (edge) of the source pad SP is located outside the active element area ACT
- the edge (edge) of the termination area TM is located outside the edge of the source pad SP. .
- the end side (end portion) of the sense pad SEP is located between the inside of the termination region TM and the outside of the active element region ACT.
- the gate pad GP and the source pad SP are located between the outside of the source pad SP and the inside of the termination region TM.
- the length of wire bonding can be shortened when applied to a mounting form as shown in FIG. 10A described later.
- the SiC-MOSFET 81 includes an SiC substrate SUB, a drift layer DFT formed on the SiC substrate SUB, a p-type base layer 83 formed in the drift layer DFT, p It has an n + type source layer 84 formed in the type base layer 83 and a termination region TM formed in the drift layer DFT.
- the SiC-MOSFET 81 includes a gate insulating film Tox formed on the drift layer DFT, the p-type base layer 83 and the n + -type source layer 84, a gate electrode GPm formed on the gate insulating film Tox, a gate An interlayer insulating film Ray1 is formed on the electrode GPm and the like.
- the SiC-MOSFET 81 includes a source pad SP formed on the interlayer insulating film Ray1, a silicon oxide film (SiO 2 ) 82 formed on the interlayer insulating film Ray1 and the source pad SP, and the back side of the SiC substrate SUB.
- the drain electrode DRm is formed.
- the active element region ACT a plurality of element transistors made of SiCMOS are formed, and these are connected in parallel to form one switch element. That is, the plurality of source layers 84 are commonly connected to the source pad SP in a region not shown, and the plurality of gate electrodes GPm are also commonly connected to the gate pad GP in FIG. 8A in a region not shown.
- FIG. 8B by arranging the termination region TM around the active element region ACT, the active element region ACT can be sufficiently secured in the chip, and the on-current can be increased, that is, the on-resistance can be reduced. is there.
- FIGS. 9A and 9B are diagrams showing a cross-sectional structure of the SiC-MOSFET.
- 9A is a cross-sectional view showing a configuration example of each element transistor in the active element region in FIG. 8B
- FIG. 9B is a cross-sectional view showing a modification of FIG. 9A.
- FIG. 9B shows one vertical SiC-MOSFET 81A having a trench structure.
- the source layer 84 serving as an n + -type region connected to the source electrode SPm is connected to the drift layer DFT via a channel formed in the base layer 83 serving as a p-type region.
- the drift layer DFT is, for example, an n ⁇ type region, and plays a role of securing a breakdown voltage.
- the SiC substrate SUB is, for example, an n + type region, and the drain electrode DRm is connected to the SiC substrate SUB.
- the SiC-MOSFET 81A may constitute a switch element used in the power conversion devices of the second and third embodiments.
- FIG. 9A shows a so-called DMOS (Double Diffusion Metal Oxide Semiconductor) type SiC-MOSFET 81 having no trench structure.
- DMOS Double Diffusion Metal Oxide Semiconductor
- FIGS. 10A and 10B are diagrams in which the SiC-MOSFET according to Example 4 is mounted on a package.
- 10A is a plan view
- FIG. 10B is a cross-sectional view taken along a-a ′ in FIG. 10A.
- a SiC-MOSFET 81 (81A) is mounted on the metal plate PLT in the package.
- the drain electrode DRm of the SiC-MOSFET 81 (81A) is connected to the drain terminal DT via the metal plate PLT, the source pad SP is connected to the source terminal ST, the gate pad GP is connected to the gate terminal GT, and bonding wires Wsm, Wgm, etc. Is connected.
- SiC-MOSFET 81 (81A), bonding wires Wsm, Wgm, and the like are sealed with resin 83.
- a-a ′ is along Wgm and also along DT.
- the length of the bonding wire Wgm connected to the gate pad GP of the SiC-MOSFET 81 (81A) and the length of the bonding wire Wsm connected to the source pad SP. Can be shortened. That is, the parasitic inductance of the bonding wire and the parasitic resistance (ON resistance component) due to the wire can be reduced. For this reason, noise at the time of switching can be suppressed small, and an excessive potential can be prevented from being biased to the SiC-MOSFET 81 (81A). Further, in this embodiment, since the chips are arranged in a plane, the chip area of the SiC-MOSFET 81 (81A) can be designed freely. For this reason, it is easy to design a low on-resistance and an on-current density, and a power semiconductor chip with more various specifications can be realized.
- FIG. 5 shows an example in which an inverter device is constructed using a switch element and a free wheel diode as one logical switch.
- an external diode for example, a SiC Schottky diode
- SiC is used.
- the return current normally flows through the built-in diode of the SiC-MOSFET.
- the gate drive circuit and the gate control circuit of the first embodiment are used, the dead time can be minimized. The total time can be shortened.
- the time required for the return current to flow through the built-in diode of the SiC-MOSFET can be shortened, the long-term reliability of the SiC-MOSFET can be improved, the life of the switch element of the SiC-MOSFET can be extended, and the reliability of the power converter can be increased. Benefits can be obtained if possible.
- each switch element is not limited to silicon (Si) and silicon carbide (SiC), and may be a compound device such as gallium nitride (GaN).
- GaN gallium nitride
- the power conversion device using the semiconductor device of the first embodiment can be applied to power systems for various purposes to obtain the same effect.
- Typical examples include an inverter device for an air conditioner, a DC / DC converter for a server power supply, a power conditioner for a solar power generation system, and an inverter device for a hybrid vehicle / electric vehicle.
Abstract
Description
実施の形態に係る半導体装置110は、電力変換装置101に用いられる。電力変換装置101は、第1電源電圧(VPP)にドレインD1が接続される第1スイッチ素子SW1と第2電源電圧(VSS)にソースS2が接続される第2スイッチ素子SW2を有する。第1スイッチ素子SW1のソースS1と第2スイッチ素子SW2のドレインD2が電気的に接続される。半導体装置110は、第1スイッチ素子SW1を駆動する第1駆動回路112Hと、第2スイッチ素子SW2を駆動する第2駆動回路112Lと、第1レベルシフト回路104Hと、第2レベルシフト回路104Lと、を具備する。第1レベルシフト回路104Hは、入力される信号(IU)の電圧レベルを第1駆動回路112Hのために変換して信号(OU)を出力し、第2レベルシフト回路104Lは、入力される信号(ID)の電圧レベルを第2駆動回路112Lのために変換して信号(OD)を出力し、第1駆動回路112Hは、第1スイッチ素子SW1のソース電位(VS)を基準として所定の電位だけ高電位の第3電源電圧(VB)と、ソース電位(VS)と、に接続される。第2駆動回路SW2は、第2電源電圧(VSS)を基準として所定の電位だけ高電位の第4電源電圧(VCC)と第2電源電圧(VSS)と、に接続される。第1レベルシフト回路104H及び第2レベルシフト回路104Lに入力される電源電位は、第3電源電圧(VB)と第2電源電圧(VSS)である。
図1は実施例1に係る半導体装置のブロック図である。半導体装置10は、ゲート駆動制御回路(GDCTL)11と上アーム用のゲート駆動回路(G/D)12Hと下アーム用のゲート駆動回路(G/D)12Lを有する。半導体装置10は、Si、SiC、GaNなどを用いたパワーデバイスで構成されるスイッチ素子を駆動する半導体装置である。半導体装置10は、1つのSi基板または複数のSi基板上に形成される。なお、図示していないが、半導体装置10は、後述するセンス用端子からの電流を受けてスイッチ素子の電流を監視する回路も有する。
(a)信号入力
端子A1に入力されるハイ側入力信号(HIN)がアサートされると、ハイ側シュミットトリガ回路1Hを介してハイ側レベルシフト回路(VDD/VCC LEVEL SHIFT)2Hによる電圧レベル変換が行われる。ハイ側シュミットトリガ回路1H及び抵抗R1は、HINが揺らいだ場合においても、安定した出力レベルをハイ側レベルシフト回路2Hに転送するための回路である。なおハイ側レベルシフト回路2HはHINの出力レベルを端子A11に印加される低電圧側電源レベル(VCC)(例えば15V等)に変換する。ハイ側シュミットトリガ回路1Hは、端子A3に印加される電源電圧(VDD)及び端子A4に印加される低電圧側ソースレベル(VSS)で動作する。端子A2に入力されるロウ側入力信号(LIN)がアサートされると、ロウ側シュミットトリガ回路1Lを介してロウ側レベルシフト回路(VDD/VCC LEVEL SHIFT)2Lによる電圧レベル変換が行われる。ロウ側シュミットトリガ回路1L及び抵抗R2は、LINが揺らいだ場合においても、安定した出力レベルをロウ側レベルシフト回路2Lに転送するための回路である。なおロウ側レベル変換回路2LはLINの出力レベルを低電圧側電源レベル(VCC)に変換する。ロウ側シュミットトリガ回路1Lは、端子A3に印加される電源電圧(VDD)及び端子A4に印加される低電圧側ソースレベル(VSS)で動作する。
ワンショットパルス生成回路(PULSE GEN)3は、ハイ側レベルシフト回路2Hの出力の立上りと立下りでそれぞれワンショットパルス信号(IU0、IU1)を生成する。また、ワンショットパルス生成回路3は、ロウ側レベルシフト回路2Lの出力の立上りと立下りでそれぞれワンショットパルス信号(ID0、ID1)を生成する。ワンショットパルス生成回路3は、端子A11に印加される低電圧側電源レベル(VCC)及び端子A4に印加される低電圧側ソースレベル(VSS)で動作する。
ハイ側高電圧レベルシフト回路(LVSU)4Hは、ワンショットパルス信号(立上り用(IU0)/立下り用(IU1))の出力レベルを端子A8に印加される高電圧側電源レベル(VB)と端子A10に印加される低電圧側ソースレベル(VSS)のレベルに変換する。高電圧側電源レベル(VB)は、上アーム用のゲート駆動回路12Hの高電圧側ソースレベル(VS)を基準に、例えば15V等を加えた電圧(VS+15V)に設定され、ゲート駆動回路(G/D)12Hの高電圧側電源電圧となる。ハイ側高電圧レベルシフト回路4Hの詳細については、後述する。
ロウ側高電圧レベルシフト回路(LVSD)4Lは、ワンショットパルス信号(立上り用(ID0)/立下り用(ID1))の出力レベルを高電圧側電源レベル(VB)と低電圧側ソースレベル(VSS)に変換する。ロウ側高電圧レベルシフト回路4Lの詳細については、後述する。
図2は、ハイ側高電圧レベルシフト回路(LVSU)及びロウ側高電圧レベルシフト回路(LVSD)の回路構成を示す一例である。ハイ側高電圧レベルシフト回路4H、及びロウ側高電圧レベルシフト回路4Lは、複数の高耐圧NMOSトランジスタNMと複数の抵抗Rから構成される。
図3は、図1の遅延回路の回路構成を示している。図4はゲート制御回路及びゲート駆動回路のタイミングチャートを示している。遅延回路7は、所謂CMOS反転回路を多段に接続し、所望の遅延時間(tde0、tde1、tde2)を生成することができる。また遅延時間選択信号(TI0、TI1、TI2)を選択的にハイレベルに設定することで、複数の遅延時間を適宜選択できる。具体的には、遅延回路7は、反転回路を6段接続した遅延生成回路34と反転回路を4段接続した遅延生成回路35と反転回路を2段接続した遅延生成回路36とを有する。遅延時間選択信号(TI0)がハイレベルのとき、反転論理積(NAND)回路31とスリーステートバッファ37が選択され、信号(Din)が遅延手段34によって遅延時間(tde0)だけ遅延して、信号(Dout)として出力される。遅延時間選択信号(TI1)がハイレベルのとき、反転論理積(NAND)回路32とスリーステートバッファ38が選択され、信号(Din)が遅延手段35によって遅延時間(tde1)だけ遅延して、信号(Dout)として出力される。遅延時間選択信号(TI2)がハイレベルのとき、反転論理積(NAND)回路33とスリーステートバッファ39が選択され、信号(Din)が遅延生成回路36によって遅延時間(tde2)だけ遅延して、信号(Dout)として出力される。なお、遅延生成回路を構成する反転回路の数は6段、4段、2段に限定されるものではなく、所望の遅延時間によって変えてもよい。また、遅延生成回路の数は3つに限定されるものではなく、3つより少なくても多くてもよい。図2の高電圧レベルシフト回路4H、4Lに図3の遅延回路を組み合わせた図1のような構成にすることで、設計したデッドタイム(tde0)の微調整をすることができる。すなわち、ハイサイド側及びロウサイド側のスイッチ素子が同時にオンすることを防ぐことができ、デッドタイムを最小化できる。なお、図3では遅延生成回路の構成は簡単な反転回路としたが、反転論理和回路(NOR)や反転論理積回路(NAND)を適宜用いて、ゲート駆動信号の立上り時間を調整するための遅延生成回路と、立下り時間を調整するための遅延生成回路を作り分け、遅延時間選択信号(TI0、TI1、TI2)と同様な選択信号を用いることで、所望の遅延時間を自由に設計できることは言うまでもない。
以上説明した回路の動作波形の一例を図4に示した。ハイ側入力信号(HIN)の立上りおよび立下りをワンショットパルス生成回路3が検知して、パルス信号である入力信号(IU0)および入力信号(IU1)を出力する。同様にロウ側入力信号(LIN)の立上りおよび立下りを検知して、パルス信号である入力信号(ID0)および入力信号(ID1)を出力する。
図9A、図9Bは、SiC-MOSFETの断面構造を示す図である。図9Aは、図8Bにおけるアクティブ素子領域内の各要素トランジスタの構成例を示す断面図であり、図9Bは、図9Aの変形例を示す断面図である。まず、図9Bでは、トレンチ構造を有する1個の縦型SiC-MOSFET81Aが示されている。ソース電極SPmに接続されたn+型の領域となるソース層84は、p型の領域となるベース層83内に形成されるチャネルを介してドリフト層DFTに接続される。ドリフト層DFTは、例えばn-型の領域であり、耐圧を確保する役目を担う。SiC基板SUBは、例えばn+型の領域であり、SiC基板SUBにドレイン電極DRmが接続される。
1L・・・ロウ側シュミットトリガ回路
2H・・・ハイ側レベルシフト回路
2L・・・ロウ側レベルシフト回路
3・・・ワンショットパルス発生回路
4H・・・ハイ側高電圧レベルシフト回路
4L・・・ロウ側高電圧レベルシフト回路
5H・・・ハイ側パルスフィルタ
5L・・・ロウ側パルスフィルタ
6H・・・ハイ側RSラッチ回路
6L・・・ロウ側RSラッチ回路
7・・・遅延回路
8H・・・ハイ側電圧検出保護回路
8L・・・ロウ側電圧検出保護回路
9・・・論理積回路
10・・・半導体装置
11・・・ゲート駆動制御回路
12H・・・上アーム用ゲート駆動回路
12L・・・下アーム用ゲート駆動回路
101・・・電力変換装置
104H・・・第1レベルシフト回路
104L・・・第2レベルシフト回路
107・・・遅延回路
110・・・半導体装置
112H・・・第1駆動回路
112L・・・第2駆動回路
SW1・・・第1スイッチ素子
SW2・・・第2スイッチ素子
Claims (15)
- 第1電源電圧にドレインが接続される第1スイッチ素子と第2電源電圧にソースが接続される第2スイッチ素子を有し、前記第1スイッチ素子のソースと前記第2スイッチ素子のドレインが電気的に接続される電力変換装置に用いられる半導体装置であって、
前記第1スイッチ素子を駆動する第1駆動回路と、
前記第2スイッチ素子を駆動する第2駆動回路と、
第1レベルシフト回路と、
第2レベルシフト回路と、
を具備し、
前記第1駆動回路は、前記第1スイッチ素子のソース電位を基準として所定の電位だけ高電位の第3電源電圧と、前記ソース電位と、に接続され、
前記第2駆動回路は、前記第2電源電圧を基準として所定の電位だけ高電位の第4電源電圧と、前記第2電源電圧と、に接続され、
前記第1レベルシフト回路は、入力される信号の電圧レベルを前記第1駆動回路のために変換して出力するようにされ、
前記第2レベルシフト回路は、入力される信号の電圧レベルを前記第2駆動回路のために変換して出力するようにされ、
前記第1レベルシフト回路及び前記第2レベルシフト回路に入力される電源電位は、前記第3電源電圧と前記第2電源電圧である、
半導体装置。 - 請求項1において、
デッドタイムを微調整するための遅延回路を含む、
半導体装置。 - 請求項2において、
前記遅延回路は前記第2レベルシフト回路と前記第2駆動回路との間に配置される、
半導体装置。 - 請求項2において、
前記遅延回路は複数の遅延時間を生成する回路を有し、外部入力信号を用いて前記複数の遅延時間を選択するようにされる、
半導体装置。 - 第1電源電圧にドレインが接続される第1スイッチ素子と、
第2電源電圧にソースが接続される第2スイッチ素子と、
半導体装置と、
を具備し、
前記第1スイッチ素子とのソースと前記第2スイッチ素子のドレインが電気的に接続され、
前記半導体装置は、前記第1スイッチ素子を駆動する第1駆動回路と、前記第2スイッチ素子を駆動する第2駆動回路と、第1レベルシフト回路と、第2レベルシフト回路と、デッドタイムを微調整するための遅延回路と、を有し、
前記第1駆動回路は、前記第1スイッチ素子のソース電位を基準として所定の電位だけ高電位の第3電源電圧と、前記ソース電位と、に接続され、
前記第2駆動回路は、前記第2電源電圧を基準として所定の電位だけ高電位の第4電源電圧が接続され、
前記第1レベルシフト回路は、入力される信号の電圧レベルを前記第1駆動回路のために変換して出力するようにされ、
前記第2レベルシフト回路は、入力される信号の電圧レベルを前記第2駆動回路のために変換して出力するようにされ、
前記第1レベルシフト回路及び前記第2レベルシフト回路に入力される電源電位は、前記第3電源電圧と前記第2電源電圧である、
電力変換装置。 - 請求項5において、
前記遅延回路は前記第2レベルシフト回と前記第2駆動回路との間に配置される、
電力変換装置。 - 請求項5において、
前記遅延回路は複数の遅延時間を生成する回路を有し、外部入力信号を用いて前記複数の遅延時間を選択するようにされる、
電力変換装置。 - 請求項5において、
前記第1スイッチング素子および第2スイッチング素子のそれぞれと並列接続された第1の還流ダイオードおよび第2の還流ダイオードを有し、
前記第1および第2の還流ダイオードと前記第1スイッチング素子と第2スイッチング素子とを1つのパワーモジュールで構成するようにされる、
電力変換装置。 - 請求項5において、
前記第1スイッチ素子及び前記第2スイッチ素子はシリコン、シリコンカーバイド、もしくはガリウムナイトライドである、
電力変換装置。 - 請求項9において、
前記第1スイッチ素子及び前記第2スイッチ素子は前記シリコンカーバイドを用いたMOSFETであり、
前記電力変換装置は、前記第1スイッチ素子及び前記第2スイッチ素子の内蔵ダイオードを還流ダイオードとして用いるインバータ装置である、
電力変換装置。 - 第1電源電圧にドレインが接続される第1スイッチ素子と、
第2電源電圧にソースが接続される第2スイッチ素子と、
前記第1スイッチ素子を駆動する第1駆動回路と、
前記第2スイッチ素子を駆動する第2駆動回路と、
第1レベルシフト回路と、
第2レベルシフト回路と、
デッドタイムを微調整するための遅延回路と、
を具備し、
前記第1スイッチ素子のソースと前記第2スイッチ素子のドレインが電気的に接続され、
前記第1駆動回路は、前記第1スイッチ素子のソース電位を基準として所定の電位だけ高電位の第3電源電圧と、前記ソース電位とを用いて動作し、
前記第2駆動回路は、前記第2電源電圧を基準として所定の電位だけ高電位の第4電源電圧とを用いて動作し、
前記第1レベルシフト回路は、前記第1駆動回路のために電圧レベルを変換するようにされ、
前記第2レベルシフト回路は、前記第2駆動回路のために電圧レベルを変換するようにされ、
前記第1レベルシフト回路及び前記第2レベルシフト回路に入力される電源電位は、前記第3電源電圧と前記第2電源電圧であり、
前記第1レベルシフト回路及び前記第2レベルシフト回路に制御信号が入力されることで、前記第2電源電圧と前記第3電源電圧を用いて、前記第1駆動回路及び前記第2駆動回路の動作電圧を生成する、
電力変換装置。 - 請求項11において、
前記遅延回路は前記第2レベルシフト回と前記第2駆動回路との間に配置される、
電力変換装置。 - 請求項11において、
前記遅延回路は複数の遅延時間を生成する手段を有し、外部入力信号を用いて前記複数の遅延時間を選択するようにされる、
電力変換装置。 - 請求項11において、
前記第1スイッチング素子に並列接続された第1の還流ダイオードと、前記第2スイッチング素子に並列接続された第2の還流ダイオードと、を有する、
電力変換装置。 - 請求項11において、
前記第1スイッチ素子及び前記第2スイッチ素子はシリコンカーバイドを用いたMOSFETであり、
前記電力変換装置は、前記第1スイッチ素子及び前記第2スイッチ素子の内蔵ダイオードを還流ダイオードとして用いるインバータ装置である、
電力変換装置。
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JP2015529292A JP6247299B2 (ja) | 2013-08-01 | 2013-08-01 | 半導体装置及び電力変換装置 |
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