WO2015014854A2 - Système de couches d'un substrat transparent et procédé de production d'un système de couches - Google Patents

Système de couches d'un substrat transparent et procédé de production d'un système de couches Download PDF

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Publication number
WO2015014854A2
WO2015014854A2 PCT/EP2014/066307 EP2014066307W WO2015014854A2 WO 2015014854 A2 WO2015014854 A2 WO 2015014854A2 EP 2014066307 W EP2014066307 W EP 2014066307W WO 2015014854 A2 WO2015014854 A2 WO 2015014854A2
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WIPO (PCT)
Prior art keywords
layer
dielectric
layer system
blocker
metal
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PCT/EP2014/066307
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German (de)
English (en)
Other versions
WO2015014854A3 (fr
Inventor
Thomas KROYER
Wolfgang Graf
Udo Schreiber
Grabosch GÜNTER
Gerd Kleideiter
Original Assignee
Leybold Optics Gmbh
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Application filed by Leybold Optics Gmbh filed Critical Leybold Optics Gmbh
Priority to BR112016002161A priority Critical patent/BR112016002161A8/pt
Priority to EA201690298A priority patent/EA030367B1/ru
Priority to EP14749743.2A priority patent/EP3027573A2/fr
Priority to CN201480053953.2A priority patent/CN105745177A/zh
Priority to MX2016001469A priority patent/MX2016001469A/es
Publication of WO2015014854A2 publication Critical patent/WO2015014854A2/fr
Publication of WO2015014854A3 publication Critical patent/WO2015014854A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3639—Multilayers containing at least two functional metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3652—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the coating stack containing at least one sacrificial layer to protect the metal from oxidation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3681—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating being used in glazing, e.g. windows or windscreens

Definitions

  • the invention relates to an infrared radiation-reflecting layer system of a transparent substrate and to a method for producing an infrared-reflective layer system on a provided transparent substrate, in each case according to the preambles of
  • Coating materials such as Au, ITO, W, Ta, Zr and Hf divorced as materials for cost reasons in particular
  • Typical prior art low-E layer systems today include at least one thin metal layer, typically a silver layer, as an infrared reflector and two or more dielectric layers sandwiching the metal layer. Furthermore, it is known to use further functional layers which protect the low-E layer system, in particular the metal layer.
  • 5,110,662 A discloses the use of a ZnO layer only 5 to 13 nm thick below the silver layer as a seed layer and a suboxidic TiOx layer, which is arranged as a blocking layer on the silver layer, with low thermal emissivity and at the same time high transmission was achieved.
  • a layer system has been proposed in EP 0 332 177 B1, in which on a glass substrate a Ti0 2 layer, on this a ZnO layer, on this one Ag layer, on this one TiO x layer, on which a Sn0 2 layer and on this one SiN x O y layer is arranged, wherein the oxynitride layer SiN x O y serves as a mechanically stable top layer (top layer).
  • the stability of the layer system applied to the substrate to be tempered is essential for use as architectural glass or tempered glass
  • Antimigration layers are used, the oxygen or sodium in a heat treatment at temperatures of about 650 ° - 700 ° C for about 10 minutes away from the silver layer.
  • known temperable layer systems include nitrogen-containing
  • a method for applying layers by sputtering a ceramic target, in particular by means of medium-frequency sputtering, is described for example in EP 0 822 996 B1.
  • Reactive DC sputtering is known for example from US 5,338,422 A.
  • EP 1 40 721 B1 discloses the use of a nitrogen-containing ceramic target, for example in one
  • the object of the present invention is to provide an infrared radiation-reflecting layer system and a method for producing such a layer system according to the preamble of the independent claims, which does not have any Si x N y O z and ZnSnO x single layers, a low emissivity has ⁇ at least in the wavelength range of 3 ⁇ to about 35 and a high transparency and color neutrality.
  • the dielectric layer is referred to a layer having a sheet resistance of> 1 ⁇ .
  • a blocking layer is a layer which serves as an anti-migration or buffer layer for diffusing substances from the substrate, the ambient air or other layers, in particular the barrier covering layer for protecting the metal layer or layers from oxygen and / or sodium diffusion.
  • the seed layer is a layer which optimizes the growth of a crystalline silver layer and thus allows the use of relatively thin metal layers with high selective infrared reflectivity.
  • a barrier cover layer system is a number of optically active layers with high mechanical and chemical resistance, which system may also consist of only one, possibly relatively thick single layer.
  • the barrier cover layer system of the present invention may also include a color correction layer over which one or more dielectric sublayers are disposed.
  • AZO is in the following with preferably 1 at.%. up to 2 at.%, called aluminum doped zinc oxide.
  • the AZO layers are preferably sputtered from a largely fully oxidized AZO target consisting of ZnOx and AlOx at a doping with 1% to 2% at.
  • ZnOx: Al X% is referred to as a material sputtered by a metallic Zn: Al target with X at.% Al - doping reactive with the addition of oxygen material. If no indication of the degree of doping is made, another value of the doping with Al may also be provided, preferably 1 at.% To 2 at.% Al, unless stated otherwise.
  • a first metal layer system comprising in this order:
  • a first metal layer consisting of or comprising Ag
  • a dielectric barrier cover layer system characterized in that the first dielectric layer consists of or comprises Si0 2 and the second dielectric layer consists of or comprises Ti0 2 or Al 2 0 3 or that the first dielectric layer consists of Al 2 0 3 or and the second dielectric layer consists of or comprises Ti0 2 .
  • the layers preferably preferably each comprise at least 80% by weight of Si0 2 Ti0 2 or Al 2 0 3 . Also layers with deviating stoichiometry, ie SiO x, TiO x Al x O y may be denoted below by Si0 2 , Ti0 2 or Al 2 0 3 , unless expressly stated otherwise.
  • the metal layer consisting of or comprising Ag, preferably has at least 99.95 at.% Silver.
  • Si0 2 for the first dielectric layer and Ti0 2 or Al 2 0 3 for the second dielectric layer is advantageous in terms of preventing sodium diffusion from the substrate into the metal layer system, increasing the adhesion of the layer system to the substrate increase the color setting of the applied layer system and to avoid oxygen diffusion during annealing. In particular, it is also possible to achieve a low sheet resistance after the tempering of the coated substrate.
  • the mentioned advantages are achieved analogously by the use of Al 2 O 3 as the first dielectric layer and Ti0 2 as the second dielectric layer.
  • the first dielectric layer and the second dielectric layer can be produced using the specified layer materials with reactive medium frequency sputtering or by sputtering metallic or ceramic targets with a high sputtering rate.
  • a further layer system according to the invention is characterized in that the first metal layer is arranged on a first seed layer, which between the second
  • Dielectric layer and the first metal layer is provided, whereby island growth of the first metal layer can be reduced / avoided and so with the same thickness of
  • a further layer system according to the invention is characterized in that the first seed layer consists of or comprises either AZO, NiCrO x , TiO x or Ti.
  • a further layer system according to the invention is characterized in that the first blocking layer is arranged on the first metal layer in order to avoid oxygen diffusion during subsequent coating processes or during tempering.
  • the first blocker layer is either made of NiCrO x, NiCr, TiO x, Ti, or AZO or comprises.
  • the first blocking layer may consist of or comprise ZnOx: Al, which is advantageous because in it the stoichiometry of the layer can be varied or varied in a wide range, namely between 100% metallic to 100% oxidic.
  • a blocker layer consisting of or comprising ZnOx: Al may have a thickness in a range of 1 .mu.m to 5.0 nm. Preferred are such
  • Blocker layers with a thickness between 1, 3nm and 4,8nm by means of a variation of the stoichiometry and / or thickness of the ZnOx: Al layer, the uptake of oxygen diffusing during annealing can be adjusted, and thus the blocking effect, i. the protection of the metal layer, for example Ag, be optimized against oxidation.
  • ZnOx AI performs the blocker layer function especially well in combination with AZO.
  • a layer system with a ZnOx: Al blocker layer or a ZnOx: Al - AZO bilayer has a lower absorption, ie a higher transmission, than a layer system with a NiCrOx blocker layer. The blocking effect is also better than using only AZO.
  • Another layer system according to the invention is characterized in that the dielectric barrier cover layer system is arranged on the first blocker layer, thus achieving in a simple manner a further improvement of the color locus setting and
  • Oxygen diffusion during annealing and aging of the layer system is reduced by oxygen diffusion.
  • a further layer system according to the invention is characterized in that a second metal layer system is provided, comprising, in this order: a third dielectric layer,
  • a second metal layer consisting of or comprising Ag
  • Metal layer system and the dielectric barrier cover layer system is arranged, whereby an increased selectivity between the visible and the IR spectral range and a lower sheet resistance can be achieved with the same transmission.
  • a further layer system according to the invention is characterized in that a third metal layer system is provided, comprising, in this order: a fourth dielectric layer,
  • a third metal layer consisting of or comprising Ag
  • dielectric barrier cover layer system is arranged, whereby a further increased Selectivity between the visible and the IR spectral range and an even lower sheet resistance at the same transmission can be achieved.
  • a further layer system according to the invention is characterized in that the third metal layer is arranged on the third seed layer and the third seed layer is arranged on the fourth dielectric layer.
  • a further layer system according to the invention is characterized in that the third dielectric layer or the fourth dielectric layer consists of or comprises TiO 2 or Al 2 O 3 .
  • a further layer system according to the invention is characterized in that the second seed layer or the third seed layer consists of or comprises AZO, NiCrO x , TiO x or Ti.
  • Another inventive coating system is characterized in that the second blocking layer or the third blocker layer of NiCrO x, NiCr, TiO x, Ti, ZnO x: Al or AZO consisting of or comprising.
  • a further layer system according to the invention is characterized in that the dielectric barrier cover layer system comprises a dielectric color correction sub-layer consisting of or comprising TiO 2 , whereby a better adjustment of the color locus can be achieved.
  • the dielectric barrier cover layer system comprises a dielectric color correction sub-layer consisting of or comprising TiO 2 , whereby a better adjustment of the color locus can be achieved.
  • it is relatively easier to dispense with TiO 2 in the dielectric barrier cover layer system for color adjustment.
  • Single layers are nitrogen-free or have less than 5 at% nitrogen.
  • nitrogen is dispensed with as process gas in the production and thus the effort for
  • a further layer system according to the invention is characterized in that the dielectric barrier cover layer system comprises in this order: a first dielectric sublayer disposed on the dielectric color correction layer consisting of or comprising Al 2 O 3 , a second dielectric sub-layer disposed on the first dielectric sub-layer, consisting of or comprising Si0 2 , thus providing an improved diffusion barrier to ambient oxygen diffusion.
  • a further layer system according to the invention is characterized in that the dielectric barrier cover layer system comprises in this order: a first dielectric sublayer disposed on the dielectric color correction layer consisting of or comprising Al 2 O 3 ,
  • a second dielectric sublayer disposed on the first dielectric sublayer, consisting of or comprising AIN or AIO x N y .
  • this layer system can advantageously be dispensed with nitrogen as the process gas and thus the cost of process gases and pumping devices can be reduced if the nitrogen-containing layers AIN or AIO x N y are made by means of a ceramic target having nitrogen.
  • the transparent substrate consists of or includes a glass material; this is usually a raw glass, in particular float glass.
  • Glass material is curable by tempering.
  • annealing is a heat treatment
  • Glass substrate applied layer system is tempered or that the substrate at
  • the sheet resistance ⁇ of a layer of thickness c / is at isotropic specific
  • the sheet resistance of a layer can be measured by the four-point method or eddy current method. In the following, the sheet resistance is given in simplified notation in the unit ohms.
  • the color values are taken from spectrophotometrically recorded reflection and
  • the scatter in transmission T vis (haze) is defined as the ratio between the diffuse transmission and the total transmission of a sample according to ASTM D1003-95.
  • the inventive method for producing an infrared radiation-reflecting layer system on a provided transparent substrate includes in this
  • Sequence Applying a first dielectric layer arranged on the transparent substrate and being formed as a diffusion barrier layer,
  • a first metal layer consisting of or comprising Ag
  • a dielectric barrier cover layer system is characterized in that the first dielectric layer of Si0 2 and the second dielectric layer of Ti0 2 or Al 2 0 3 or the first dielectric layer of Al 2 0 3 and the second dielectric layer of Ti0 2 exists.
  • the first blocker layer and the barrier barrier dielectric barrier system correspond to the respective layers of the layer systems shown above.
  • Layer system on a provided transparent substrate in that at least one of the applied individual layers of layer systems according to the invention by sputtering a ceramic target, by reactive sputtering of a metallic target, by medium-frequency sputtering or by DC sputtering is applied.
  • FIG. 1 shows a schematic representation of a single-low-E layer system according to the invention of a transparent substrate
  • FIG. 2 shows a schematic representation of a double-low-E layer system according to the invention of a transparent substrate
  • FIG. 3 shows a schematic representation of a triple-low E layer system according to the invention of a transparent substrate
  • FIG. 1 shows a coated substrate comprising the substrate 100, for example made of glass, and the layer system comprising the layers D1, D2, S1, the metal layer system MS1 and the barrier cover layer system BDS, the metal layer system MS1 having a metal layer M1 and a blocking layer B1 and Barrier cover layer system has individual layers FK, BD1 and BD2.
  • D1 denotes a dielectric layer which consists of Si0 2 and has a thickness of between 1 nm and 30 nm.
  • D2 denotes a dielectric layer consisting of Ti0 2 or Al 2 0 3 and has a thickness between 5 nm and 40 nm.
  • the dielectric layer D1 may consist of Al 2 O 3 with a thickness of between 5 nm and 50 nm, the dielectric layer D 2 consisting of TiO 2 having a thickness of between 5 nm and 50 nm.
  • the metal layer M1 is disposed on an optional seed layer S1 having a thickness of between 3nm and 30nm that is sandwiched between the second dielectric layer D2 and the first one
  • Metal layer M1 is provided.
  • the metal layer M1 consists of or comprises metallic Ag.
  • the first seed layer S1 with a thickness between 1 nm and 20 nm consists of or comprises either AZO, NiCrO x , TiO x or Ti.
  • the dielectric blocking layer B1 having a thickness between 1 nm and 20 nm is arranged on the first metal layer M1, wherein the blocking layer B1 consists of or comprises either NiCrO x , NiCr, TiO x , Ti, ZnO x: Al or AZO.
  • the barrier barrier dielectric system BDS with a thickness of between 5 nm and 100 nm is arranged on the blocker layer B1 and comprises a dielectric sub-layer BD1 with a thickness of between 5 nm and 100 nm, consisting of or comprising Al 2 O 3 , and a dielectric sub-layer BD 2 with a thickness between 5 nm and 100nm disposed on the first dielectric sub-layer BD1 consisting of or including Si0 2 .
  • the dielectric sub-layer BD1 with a thickness of between 5 nm and 100 nm consisting of or comprising Al 2 O 3
  • Color correction layer FK consists or comprises Ti0 2 with a thickness between 5nm and 100nm.
  • the dielectric sub-layer BD1 is disposed on the color correction layer FK.
  • the dielectric sub-layer consists BD1 having a thickness between 5 nm and 100 nm, AlN or AlO x N y, or this has.
  • the seed layer S1 and / or the color correction layer FK is missing.
  • the barrier barrier layer system BDS can consist of only one dielectric sublayer of SiO 2 having a thickness of between 5 nm and 100 nm or Al 2 O 3 with a thickness of between 5 nm and 100 nm.
  • FIG. 2 shows a layer system in which, in addition to the layers in FIG. 1, a second metal layer system MS2 is provided with a third dielectric layer D3, a second seed layer S2, a second metal layer M2, a second blocker layer B2.
  • the second metal layer system MS2 is arranged between the first blocker layer B1 of the first metal layer system MS1 and the dielectric barrier cover layer system BDS.
  • the second metal layer M2 consists of or comprises metallic Ag and is disposed on the second seed layer S2 and the second seed layer S2 on the third dielectric layer D3.
  • the seed layer with a thickness between 1 nm and 20 nm, consists of or comprises AZO, NiCrO x , TiO x or Ti.
  • FIG. 3 shows a layer system in which, in addition to the layers in FIG. 2, a third metal layer system MS3 is provided, with a fourth dielectric layer D4, a third seed layer S3, a third metal layer M3, a third blocker layer B3.
  • the third metal layer system MS3 between the second blocker layer B2 and the
  • the third metal layer M3 is disposed on the third seed layer S3 and the third seed layer S3 on the fourth
  • the dielectric layer D4 wherein the fourth dielectric layer D4, having a thickness of between 5 nm and 100 nm, consists of or comprises TiO 2 , AlN or Al 2 O 3 .
  • a preferred nitrogen-free layer system as well as a preferred layer system with a nitridic diffusion barrier are reproduced in tabular form below.
  • a blocker dielectric layer ZnOx: Al 2% having a thickness of 1.3 nm is disposed on a silver layer of 14.2 nm.
  • a dielectric Barrier layer is a double layer of AZO with a thickness of 46,0nm and AI203 provided with a thickness of 24,0nm.
  • the low-E layer # 3661 has a silver layer of 13.5 nm, a ZnOx: Al layer of 4.0 nm, an AZO layer of 37.2 nm and an Al 2 O 3 layer of 23.6 nm.
  • on this one seed layer of AZO of 95.0 nm on this a silver layer of 2.6 nm and on this one ZnOx: AI blocker layer with a thickness 1, 5nm and dielectric barrier layer system consisting of an AI203 layer with a thickness of 45,0nm, provided.
  • a ZnOx Al layer of 1.3 nm, on this an 84.9 nm AZO layer, on this a silver layer of 14 , 5nm, on this one blocker layer of ZnOx: Al with a thickness of 1, 3nm, on this one AZO seed layer with a thickness of 86,0nm, on this one
  • the dielectric barrier layer system may also comprise or consist of an Al 2 O 3 -SiO 2 layer system.
  • Al blocker layers having 2 at.% Al are preferably used, it being understood that other dopings can also be envisaged.
  • Layer system # 3704 to # 3661, # 3694, and finally # 3689 is a desirable effect because it reduces the emissivity of the particular system.
  • Figure 4 shows the wavelength-dependent reflection (reflection spectra) for the o.g.
  • FIG. 5 shows the wavelength-dependent reflection (reflection spectra) for the said layer systems on the glass side, while FIG. 5A shows the values after annealing.
  • Figure 6 shows the wavelength-dependent transmittance before annealing
  • Figure 6A shows the values after annealing.
  • FIGS. 4, 4A, 5, 5A, 6 and 6A advantageously shows that only slight changes in the spectral reflection spectra and the spectral transmission spectra occur due to the annealing of the layers mentioned. Furthermore, it is found that the use of multiple silver layers advantageously makes the flank between regions of high transmission in the visual and low transmission in the infrared wavelength range significantly steeper, so that the selectivity of the transmission increases.
  • the layer systems of the invention meet the optical and electrical requirements of temperable low-E coatings, with a compromise of the highest possible

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  • Engineering & Computer Science (AREA)
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  • General Chemical & Material Sciences (AREA)
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Abstract

L'invention concerne un système de couches d'un substrat transparent (100) qui réfléchit le rayonnement infrarouge. Ledit système comprend dans cet ordre : - une première couche diélectrique (D1) disposée sur le substrat transparent (100), - une seconde couche diélectrique (D2) disposée sur la première couche diélectrique (D1), - un premier système de couches métalliques (MS1) comprenant dans cet ordre : - une première couche métallique (M1), de préférence constituée par de l'Ag ou comprenant de l'Ag, - une première couche de blocage (B1), - un système de couche de revêtement diélectrique formant barrière (BDS). Selon l'invention, la première couche diélectrique (D1) est constituée de SiO2 ou comprend du SiO2 et la seconde couche diélectrique (D2) est constituée de TiO2 ou de Al2O3 ou comprend du TiO2 ou de l'Al2O3, ou la première couche diélectrique (D1) est constitué d'Al2O3 ou comprend de l'Al2O3 et la seconde couche diélectrique (D2) est constituée de TiO2 ou comprend du TiO2. L'invention concerne également un procédé de production d'un système de couches, réfléchissant le rayonnement infrarouge, sur un substrat transparent (100), dans lequel au moins une des couches individuelles déposées est déposée par pulvérisation d'une cible céramique ou par pulvérisation réactive.
PCT/EP2014/066307 2013-07-30 2014-07-29 Système de couches d'un substrat transparent et procédé de production d'un système de couches WO2015014854A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BR112016002161A BR112016002161A8 (pt) 2013-07-30 2014-07-29 sistema de camadas de um substrato transparente, bem como processo para produção de um sistema de camadas
EA201690298A EA030367B1 (ru) 2013-07-30 2014-07-29 Отражающее инфракрасное излучение стекло и способ его изготовления
EP14749743.2A EP3027573A2 (fr) 2013-07-30 2014-07-29 Système de couches d'un substrat transparent et procédé de production d'un système de couches
CN201480053953.2A CN105745177A (zh) 2013-07-30 2014-07-29 透明基材的层系统以及用于制造层系统的方法
MX2016001469A MX2016001469A (es) 2013-07-30 2014-07-29 Sistema de capas de un sustrato transparente y metodo para producir un sistema de capas.

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DE102014002965.4A DE102014002965A1 (de) 2013-07-30 2014-03-06 Schichtsystem eines transparenten Substrats sowie Verfahren zur Herstellung eines Schichtsystems

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CN114203340A (zh) * 2021-12-16 2022-03-18 西湖大学 一种导电膜

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BR112016002161A8 (pt) 2020-01-28
EP3027573A2 (fr) 2016-06-08
TWI583807B (zh) 2017-05-21
EA201690298A1 (ru) 2016-07-29
BR112016002161A2 (pt) 2017-08-01
MX2016001469A (es) 2017-01-05
TW201522678A (zh) 2015-06-16
CN105745177A (zh) 2016-07-06
DE102014002965A1 (de) 2015-02-05
EA030367B1 (ru) 2018-07-31

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