CN102503174B - 一种磁控溅射可钢化双银low-e 玻璃及制备该玻璃的方法 - Google Patents
一种磁控溅射可钢化双银low-e 玻璃及制备该玻璃的方法 Download PDFInfo
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Abstract
本发明公开了一种磁控溅射可钢化双银LOW-E玻璃,包括有玻璃基片,其特征在于:在玻璃基片的复合面上由内到外依次相邻地磁控溅射有十三个膜层,其中第一膜层即最内层为SiO2层,第二层为TiO2层,第三层为CrNx层,第四层为ZnO层,第五层为Ag层,第六层为NiCrOy层,第七层为TiO2层,第八层为ZnSn3O4层,第九层为ZnO层,第十层为Ag层,第十一层为NiCrOy层,第十二层为TiO2层,最外层为Si3N4Oy层。本发明目的是克服了现有技术的不足,提供一种透过率高,镀膜层与玻璃基材的结合力强、镀膜层致密、均匀的磁控溅射可钢化双银LOW-E玻璃,本发明还提供一种磁控溅射法制备可钢化双银LOW-E玻璃的方法。
Description
【技术领域】
本发明涉及一种磁控溅射可钢化双银LOW-E玻璃,本发明还涉及一种磁控溅射法制备可钢化双银LOW-E玻璃的方法。
【背景技术】
玻璃是在当代的生产和生活中扮演着重要角色,建筑物的门窗汽车车窗和挡风玻璃等等许多地方都用到玻璃,给生产和生活带来了很多的方便。但是现有的镀膜玻璃的镀膜层与玻璃基材的结合力弱、镀膜层疏松、不均匀。
【发明内容】
本发明目的是克服了现有技术的不足,提供一种透过率高,镀膜层与玻璃基材的结合力强、镀膜层致密、均匀的磁控溅射可钢化双银LOW-E玻璃,本发明还提供一种磁控溅射法制备可钢化双银LOW-E玻璃的方法。
本发明是通过以下技术方案实现的:
一种磁控溅射可钢化双银LOW-E玻璃,包括有玻璃基片1,其特征在于:在玻璃基片的复合面上由内到外依次相邻地磁控溅射有十三个膜层,其中第一膜层即最内层为SiO2层21,第二层为TiO2层22,第三层为CrNx层23,第四层为ZnO层24,第五层为Ag层25,第六层为NiCrOy层26,第七层为TiO2层27,第八层为ZnSn3O4层28,第九层为ZnO层29,第十层为Ag层210,第十一层为NiCrOy层211,第十二层为TiO2层212,最外层为Si3N4Oy层213。
如上所述的磁控溅射可钢化双银LOW-E玻璃,其特征在于所述第一膜层SiO2层21的厚度为23~27nm,第二层TiO2层22的厚度为28~32nm,第三层CrNx层23的厚度为1.5~3nm,第四层ZnO层24的厚度为8~12nm,第五层Ag层25的厚度为8~12nm,第六层NiCrOy层26的厚度为1.5~3nm,第七层TiO2层27的厚度为28~32nm,第八层ZnSn3O4层28的厚度为58~62nm,第九层ZnO层29的厚度为8~12nm,第十层Ag层210的厚度为8~12nm,第十一层NiCrOy层211的厚度为1.5~3nm,第十二层TiO2层212的厚度为18~22nm,最外层Si3N4Oy层213的厚度为28~32nm。
一种磁控溅射法制备上述的可钢化双银LOW-E玻璃的方法,其特征在于包括如下步骤:
(1)磁控溅射SiO2层,用交流中频电源、氮气作反应气体溅射半导体材料重量比Si:Al(90~98:2~10);
(2)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(3)磁控溅射CrNx层,用氮气做反应气体,用直流电源溅射;
(4)磁控溅射ZnO层,平滑CrNx层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(5)磁控溅射Ag层,交流电源溅射;
(6)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(7)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(8)磁控溅射ZnSn3O4层,用中频交流电流溅射ZnSn重量比(Zn:Sn=48~52:48~52);
(9)磁控溅射ZnO层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(10)磁控溅射Ag层,交流电源溅射;
(11)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(12)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(13)磁控溅射Si3N4Oy层,氮气作反应气体、用交流中频电源溅射半导体材料重量比Si:Al(90~98:2~10)。
如上所述的方法,其特征在于所述第一膜层SiO2层21的厚度为23~27nm,第二层TiO2层22的厚度为28~32nm,第三层CrNx层23的厚度为1.5~3nm,第四层ZnO层24的厚度为8~12nm,第五层Ag层25的厚度为8~12nm,第六层NiCrOy层26的厚度为1.5~3nm,第七层TiO2层27的厚度为28~32nm,第八层ZnSn3O4层28的厚度为58~62nm,第九层ZnO层29的厚度为8~12nm,第十层Ag层210的厚度为8~12nm,第十一层NiCrOy层211的厚度为1.5~3nm,第十二层TiO2层212的厚度为18~22nm,最外层Si3N4Oy层213的厚度为28~32nm。
与现有技术相比,本发明有如下优点:
1、本发明采用磁控溅射法将镀膜层溅射在玻璃基材上,镀膜层与玻璃基材的结合力强、镀膜层致密、均匀。
2、本玻璃利用TiO2膜的高折射率,使镀膜玻璃颜色呈中性,使之具有较高的可见光透过率,本玻璃透光率T(透过透明或半透明体的光通量与其入射光通量的百分率达84%,辐射率≤0.04,并利用TiO2降低银膜的面电阻,减少银的消耗。
3、本玻璃钢化前后透过率偏差小于1.5%,漂移小,ΔE<1.0,颜色偏差小,按国标法测耐磨ΔE<2.0。
【附图说明】
图1是本发明结构示意图。
【具体实施方式】
一种磁控溅射可钢化双银LOW-E玻璃,包括有玻璃基片1,在玻璃基片的复合面上由内到外依次相邻地磁控溅射有十三个膜层,其中第一膜层即最内层为SiO2层21,第二层为TiO2层22,第三层为CrNx层23,第四层为ZnO层24,第五层为Ag层25,第六层为NiCrOy层26,第七层为TiO2层27,第八层为ZnSn3O4层28,第九层为ZnO层29,第十层为Ag层210,第十一层为NiCrOy层211,第十二层为TiO2层212,最外层为Si3N4Oy层213。
所述第一膜层SiO2层21,即二氧化硅层,通过与TiO2结合提高折射率,SiO2的厚度为23~27nm,nm是纳米,1m=109nm。
所述第二膜层的TiO2层22,即钛的氧化物——二氧化钛。采用高折射率n=2.5的TiO2是为了提高玻璃的透光率,而且玻璃呈中性颜色,使之具有较高的可见光透过率,并利用TiO2降低银膜的面电阻,减少银的消耗。TiO2膜表面非常光滑,因而改善了银膜的导电率。TiO2层厚度为28~32nm。
第三层CrNx层23,即氮化铬层,提高耐磨性,CrNx层厚度为1.5~3nm。CrNx厚度为1.5~3nm。
第四层ZnO层24,即氧化锌层,是减反射的金属氧化物层,同时进一步提高银膜的导电率。氧化锌ZnO可用作助熔剂,降低玻璃的烧结温度,用作玻璃涂料,让可见光通过的同时反射红外线,以达到保温或隔热的效果。ZnO层厚度为8~12nm。
所述第五层Ag层25,即金属银层,金属银层提供了较低的辐射率,起环保节能的作用;Ag层厚度为8~12nm。
第六层NiCrOy层26,即氧化镍铬层,氧化镍铬层为了进一步保护银膜,以避免银膜在反应溅射过程受到浸蚀,还要在薄的银膜一侧或两侧增加所谓的“阻挡层”,对于镀层具有非常良好的抗化学和机械性能。NiCrOy层的厚度为1.5~3nm。
第七层TiO2层27,即钛的氧化物——二氧化钛。TiO2层的厚度为28~32nm。
第八层ZnSn3O4层28,即氧化锌锡层,ZnSn3O4的的厚度为58~62nm,
第九层ZnO层29,即氧化锌层,是减反射的金属氧化物层,同时进一步提高银膜的导电率。氧化锌ZnO可用作助熔剂,降低玻璃的烧结温度,用作玻璃涂料,让可见光通过的同时反射红外线,以达到保温或隔热的效果。ZnO层的厚度为8~12nm。
第十层Ag层210,即金属银层,金属银层提供了较低的辐射率,起环保节能的作用;Ag层的厚度为8~12nm。
第十一层NiCrOy层211,即氧化镍铬层,氧化镍铬层为了进一步保护银膜,以避免银膜在反应溅射过程受到浸蚀,还要在薄的银膜一侧或两侧增加所谓的“阻挡层”,对于镀层具有非常良好的抗化学和机械性能。NiCrOy层的厚度为1.5~3nm。
第十二层TiO2层212,即钛的氧化物——二氧化钛,厚度为18~22nm。
最外层Si3N4Oy层29,即氮氧化硅层,氮氧化硅提高钢化时抗高温氧化性,Si3N4Oy层厚度为28~32nm。
一种磁控溅射法制备权上述的可钢化双银LOW-E玻璃的方法,包括如下步骤:
(14)磁控溅射SiO2层,用交流中频电源、氮气作反应气体溅射半导体材料Si:Al(90~98:2~10);
(15)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(16)磁控溅射CrNx层,用氮气做反应气体,用直流电源溅射;
(17)磁控溅射ZnO层,平滑CrNx层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(18)磁控溅射Ag层,交流电源溅射;
(19)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(20)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(21)磁控溅射ZnSn3O4层,用中频交流电流溅射ZnSn(Zn:Sn48~52:48~52);
(22)磁控溅射ZnO层,平滑CrNx层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(23)磁控溅射Ag层,交流电源溅射;
(24)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(25)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(26)磁控溅射Si3N4Oy层,氮气作反应气体、用交流中频电源溅射半导体材料Si:Al(90~98:2~10)。
本发明的优选方案:
所述第一膜层SiO2层21的厚度为25nm,第二层TiO2层22的厚度为30nm,第三层CrNx层23的厚度为2nm,第四层ZnO层24的厚度为10nm,第五层Ag层25的厚度为10nm,第六层NiCrOy层26的厚度为2nm,第七层TiO2层27的厚度为30nm,第八层ZnSn3O4层28的厚度为60nm,第九层ZnO层29的厚度为10nm,第十层Ag层210的厚度为10nm,第十一层NiCrOy层211的厚度为2nm,第十二层TiO2层212的厚度为20nm,最外层Si3N4Oy层213的厚度为30nm。
步骤(1)和步骤(13)中半导体材料的配比均为Si:Al(90:10),步骤(8)中锌和锡配比为Zn:Sn(50:50)。
Low-E玻璃也叫做低辐射镀膜玻璃。
本发明采用磁控溅射法将镀膜层溅射在玻璃基材上,镀膜层与玻璃基材的结合力强、镀膜层致密、均匀。本玻璃利用TiO2膜的高折射率,使镀膜玻璃颜色呈中性,使之具有较高的可见光透过率,并利用TiO2降低银膜的面电阻,减少银的消耗。本玻璃钢化前后透过率偏差小于1.5%,漂移小,ΔE<1.0,颜色偏差小,按国标法测耐磨ΔE<2.0。
本玻璃利用TiO2膜的高折射率,使镀膜玻璃颜色呈中性,使之具有较高的可见光透过率,并利用TiO2降低银膜的面电阻,减少银的消耗。本玻璃透光率T(透过透明或半透明体的光通量与其入射光通量的百分率)达84%;本玻璃辐射率≤0.04,辐射率是某物体的双位面积辐射的热量同双位面积黑体在相同温度、相同条件下辐射热量之比。辐射率定义是某物体吸收或反射热量的能力。玻璃的辐射率越接近于零,其绝热性能就越好。
Claims (4)
1.一种磁控溅射可钢化双银LOW-E玻璃,包括有玻璃基片(1),其特征在于:在玻璃基片的复合面上由内到外依次相邻地磁控溅射有十三个膜层,其中第一膜层即最内层为SiO2层(21),第二层为TiO2层(22),第三层为CrNx层(23),第四层为ZnO层(24),第五层为Ag层(25),第六层为NiCrOy层(26),第七层为TiO2层(27),第八层为ZnSn3O4层(28),第九层为ZnO层(29),第十层为Ag层(210),第十一层为NiCrOy层(211),第十二层为TiO2层(212),最外层为Si3N4Oy层(213)。
2.根据权利要求1所述的磁控溅射可钢化双银LOW-E玻璃,其特征在于所述第一膜层SiO2层(21)的厚度为23~27nm,第二层TiO2层(22)的厚度为28~32nm,第三层CrNx层(23)的厚度为1.5~3nm,第四层ZnO层(24)的厚度为8~12nm,第五层Ag层(25)的厚度为8~12nm,第六层NiCrOy层(26)的厚度为1.5~3nm,第七层TiO2层(27)的厚度为28~32nm,第八层ZnSn3O4层(28)的厚度为58~62nm,第九层ZnO层(29)的厚度为8~12nm,第十层Ag层(210)的厚度为8~12nm,第十一层NiCrOy层(211)的厚度为1.5~3nm,第十二层TiO2层(212)的厚度为18~22nm,最外层Si3N4Oy层(213)的厚度为28~32nm。
3.一种磁控溅射法制备权利要求1所述的可钢化双银LOW-E玻璃的方法,其特征在于包括如下步骤:
(1)磁控溅射SiO2层,用交流中频电源、氮气作反应气体溅射半导体材料重量比Si:Al=90~98:2~10;
(2)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(3)磁控溅射CrNx层,用氮气做反应气体,用直流电源溅射;
(4)磁控溅射ZnO层,平滑CrNx层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(5)磁控溅射Ag层,交流电源溅射;
(6)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(7)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(8)磁控溅射ZnSn3O4层,用中频交流电流溅射ZnSn重量比Zn:Sn=48~52:48~52;
(9)磁控溅射ZnO层,用中频交流电源溅射陶瓷Zn靶,为Ag层作铺垫;
(10)磁控溅射Ag层,交流电源溅射;
(11)磁控溅射NiCrOy层,用氮气做反应气体,渗少量氧气,用直流电源溅射;
(12)磁控溅射TiO2层,用交流中频电源溅射陶瓷钛靶;
(13)磁控溅射Si3N4Oy层,氮气作反应气体、用交流中频电源溅射半导体材料重量比Si:Al=90~98:2~10。
4.根据权利要求3所述的方法,其特征在于所述第一膜层SiO2层(21)的厚度为23~27nm,第二层TiO2层(22)的厚度为28~32nm,第三层CrNx层(23)的厚度为1.5~3nm,第四层ZnO层(24)的厚度为8~12nm,第五层Ag层(25)的厚度为8~12nm,第六层NiCrOy层(26)的厚度为1.5~3nm,第七层TiO2层(27)的厚度为28~32nm,第八层ZnSn3O4层(28)的厚度为58~62nm,第九层ZnO层(29)的厚度为8~12nm,第十层Ag层(210)的厚度为8~12nm,第十一层NiCrOy层(211)的厚度为1.5~3nm,第十二层TiO2层(212)的厚度为18~22nm,最外层Si3N4Oy层(213)的厚度为28~32nm。
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