CN104264119A - 一种非对称膜系双银low-e玻璃及制备方法 - Google Patents

一种非对称膜系双银low-e玻璃及制备方法 Download PDF

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CN104264119A
CN104264119A CN201410563786.8A CN201410563786A CN104264119A CN 104264119 A CN104264119 A CN 104264119A CN 201410563786 A CN201410563786 A CN 201410563786A CN 104264119 A CN104264119 A CN 104264119A
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杨永华
王玲
秦文锋
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Anhui qianggang tempered glass Co., Ltd
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Abstract

本发明公开了一种非对称膜系双银LOW-E玻璃，包括有玻璃基片，在所述的玻璃基片的复合面上由内到外依次相邻地复合有十一个膜层，其特征在于：其中第一膜层即最内层为Bi2O3层，第二膜层为TiO2层，第三膜层为NiCrx层，第四膜层为ZnO层，第五膜层为Ag层，第六层膜为CrNiOy层，第七膜层为TiO2层，第八膜层为AZO层，第九膜层为Ag层，第十膜层为CrNiOy层，第十一膜层即最外层为Si3N4Oy层。本发明提供一种透过率高，耐磨性好，钢化时抗高温氧化性能好，不同角度观察玻璃时呈现不同颜色的非对称膜系双银LOW-E玻璃。本发明还提供一种非对称膜系双银LOW-E玻璃的制备方法。

Description

一种非对称膜系双银LOW-E玻璃及制备方法
【技术领域】
本发明涉及一种镀膜玻璃，更具体地说是一种非对称膜系双银LOW-E玻璃，本发明还涉及一种玻璃的制备方法。
【背景技术】
现有的双银LOW-E玻璃,均采用单银LOW-E玻璃叠加的对称结构，由于第一层银与第二层银厚度基本一致。不同角度观察玻璃时颜色一致，且膜层附着力不够强。
【发明内容】
本发明目的是克服了现有技术的不足，提供一种透过率高，耐磨性好，钢化时抗高温氧化性能好，不同角度观察玻璃时呈现不同颜色的非对称膜系双银LOW-E玻璃。本发明还提供一种非对称膜系双银LOW-E玻璃的制备方法。
本发明是通过以下技术方案实现的：
一种非对称膜系双银LOW-E玻璃，包括有玻璃基片1，在所述的玻璃基片1的复合面上由内到外依次相邻地复合有十一个膜层，其特征在于：其中第一膜层即最内层为Bi2O3层21，第二膜层为TiO2层22，第三膜层为NiCrx层23，第四膜层为ZnO层24，第五膜层为Ag层25，第六层膜为CrNiOy层26，第七膜层为TiO2层27，第八膜层为AZO层28，第九膜层为Ag层29，第十膜层为CrNiOy层210，第十一膜层即最外层为Si3N4Oy层211。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第一膜层的Bi2O3层21的厚度为20～35nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第二膜层的TiO2层22、第七膜层TiO2层27的厚度均为25～35nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第三膜层NiCrx层23的厚度为1～3nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第四膜层ZnO层24的厚度为8～12nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第五膜层Ag层25的厚度为5～8nm，所述第九膜层Ag层29的厚度为12～15nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第六膜层CrNxOy层26的厚度为2～4nm、第十膜层CrNiOy层210的厚度为1～3nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第八膜层AZO层28的厚度为60～80nm。
如上所述的非对称膜系双银LOW-E玻璃，其特征在于所述第十一膜层Si3N4Oy层211的厚度为25～35nm。
一种制备上述的非对称膜系双银LOW-E玻璃的方法，其特征在于包括如下步骤：
(1)磁控溅射Bi2O3层，用交流中频电源、氧气作反应气体溅
射Bi靶，氩氧比为400SCCM～420SCCM：
450SCCM～500SCCM；
(2)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；
(3)磁控溅射NiCrx层，用直流电源、用氮气做反应气体的金属溅射；
(4)磁控溅射ZnO层，用中频交流电源溅射陶瓷Zn靶，为Ag层作铺垫；
(5)磁控溅射Ag层，用交流电源溅射；
(6)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(7)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；AZO
(8)磁控溅射AZO层，用中频交流电源溅射陶瓷AZO靶；
(9)磁控溅射Ag层，用交流电源溅射；
(10)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(11)磁控溅射Si3N4Oy层，用交流中频电源、氮气作反应气体溅射半导体材料SiAl重量比Si:Al＝90:10，渗入少量氧气。
与现有技术相比，本发明有如下优点：
本发明的玻璃于两层银层厚度不一致，从而产生干涉，在不同角度观察玻璃时，会呈现不同的颜色，透过率高，耐磨性好，钢化时抗高温氧化性能好。膜层附着力强，抗腐蚀性能好。
【附图说明】
图1是本发明结构示意图。
【具体实施方式】
一种非对称膜系双银LOW-E玻璃，包括有玻璃基片1，在所述的玻璃基片1的复合面上由内到外依次相邻地复合有十一个膜层，其中第一膜层即最内层为Bi2O3层21，第二膜层为TiO2层22，第三膜层为NiCrx层23，第四膜层为ZnO层24，第五膜层为Ag层25，第六层膜为CrNiOy层26，第七膜层为TiO2层27，第八膜层为AZO层28，第九膜层为Ag层29，第十膜层为CrNiOy层210，第十一膜层即最外层为Si3N4Oy层211。
所述最内层Bi2O3层21，即三氧化二铋层；Bi2O3为介质层，增强玻璃与膜层的附着力及耐腐蚀性能。是传统Si3N4的三倍以上。Bi2O3层21的厚度为20～35nm，优选25nm，nm是纳米，1m＝109nm。
所述的第二层TiO2层22，即钛的氧化物——二氧化钛。采用高折射率n＝2.5的TiO2是为了提高玻璃的透光率，降低银层的面电阻，减少银的消耗，又可以减少LOW-E热处理后产生光散射，而且玻璃呈中性颜色，TiO2膜表面非常光滑，因而改善了银膜的导电率。所述第二膜层的TiO2层22、第七层膜层TiO2层27的厚度均为25～35nm，优选30nm。
所述第三膜层NiCrx层23，即镍铬金属层，提高耐磨性性能。所述第三膜层NiCrx层23的厚度均为1～3nm，优选2nm。
所述第四层ZnO层24，即氧化锌层，平整层，平滑CrNx层，为Ag层作铺垫，降低辐射率。
所述第五膜层Ag层25即金属银层，所述第五膜层Ag层25的厚度为5～8nm。所述第九膜层Ag层29的厚度为12～15nm。双银膜系的银层厚度不对称，本层比第二层银层薄，以取得良好的膜层均匀性。
所述第六膜层CrNxOy层26，即氮氧化铬层，提高膜层耐磨性、提高透光率、提高钢化时抗高温氧化性，所述第六膜层CrNxOy层26的厚度为2～4nm，优选3nm。第十膜层CrNiOy层210的厚度为1～3nm，优选2nm。
所述第八膜层AZO层28，即氧化锌铝层，所述第八膜层AZO层28的厚度为60～80nm，优选70nm。
所述最外层Si3N4Oy层211，即氮氧化硅层，提高钢化时抗高温氧化性。所述最外层Si3N4Oy层211的厚度为25～35nm。优选30nm。
一种制备上述的非对称膜系双银LOW-E玻璃的方法，其特征在于包括如下步骤：
(1)磁控溅射Bi2O3层，用交流中频电源、氧气作反应气体溅射Bi靶，氩氧比为400SCCM～420SCCM：
450SCCM～500SCCM；
(2)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；
(3)磁控溅射NiCrx层，用直流电源、用氮气做反应气体的金属溅射；
(4)磁控溅射ZnO层，用中频交流电源溅射陶瓷Zn靶，为Ag层作铺垫；
(5)磁控溅射Ag层，用交流电源溅射；
(6)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(7)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；AZO
(8)磁控溅射AZO层，用中频交流电源溅射陶瓷AZO靶；
(9)磁控溅射Ag层，用交流电源溅射；
(10)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(11)磁控溅射Si3N4Oy层，用交流中频电源、氮气作反应气体溅射半导体材料SiAl重量比Si:Al＝90:10，渗入少量氧气。
本发明的玻璃于两层银层厚度不一致，从而产生干涉，在不同角度观察玻璃时，会呈现不同的颜色，透过率高，耐磨性好，钢化时抗高温氧化性能好。膜层附着力强，抗腐蚀性能好。

Claims (10)

1.一种非对称膜系双银LOW-E玻璃，包括有玻璃基片(1)，在所述的玻璃基片(1)的复合面上由内到外依次相邻地复合有十一个膜层，其特征在于：其中第一膜层即最内层为Bi2O3层(21)，第二膜层为TiO2层(22)，第三膜层为NiCrx层(23)，第四膜层为ZnO层(24)，第五膜层为Ag层(25)，第六层膜为CrNiOy层(26)，第七膜层为TiO2层(27)，第八膜层为AZO层(28)，第九膜层为Ag层(29)，第十膜层为CrNiOy层(210)，第十一膜层即最外层为Si3N4Oy层(211)。
2.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第一膜层的Bi2O3层(21)的厚度为20～35nm。
3.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第二膜层的TiO2层(22)、第七膜层TiO2层(27)的厚度均为25～35nm。
4.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第三膜层NiCrx层(23)的厚度为1～3nm。
5.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第四膜层ZnO层(24)的厚度为8～12nm。
6.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第五膜层Ag层(25)的厚度为5～8nm，所述第九膜层Ag层(29)的厚度为12～15nm。
7.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第六膜层CrNxOy层(26)的厚度为2～4nm、第十膜层CrNiOy层(210)的厚度为1～3nm。
8.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第八膜层AZO层(28)的厚度为60～80nm。
9.根据权利要求1所述的非对称膜系双银LOW-E玻璃，其特征在于所述第十一膜层Si3N4Oy层(211)的厚度为25～35nm。
10.一种制备权利要求1-9任意一项所述的非对称膜系双银LOW-E玻璃的方法，其特征在于包括如下步骤：
(1)磁控溅射Bi2O3层，用交流中频电源、氧气作反应气体溅射Bi靶，氩氧比为400SCCM～420SCCM：
450SCCM～500SCCM；
(2)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；
(3)磁控溅射NiCrx层，用直流电源、用氮气做反应气体的金属溅射；
(4)磁控溅射ZnO层，用中频交流电源溅射陶瓷Zn靶，为Ag层作铺垫；
(5)磁控溅射Ag层，用交流电源溅射；
(6)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(7)磁控溅射TiO2层，用交流中频电源溅射陶瓷钛靶；AZO
(8)磁控溅射AZO层，用中频交流电源溅射陶瓷AZO靶；
(9)磁控溅射Ag层，用交流电源溅射；
(10)磁控溅射CrNxOy层，用直流电源溅射，用氮气做反应气体，渗少量氧气；
(11)磁控溅射Si3N4Oy层，用交流中频电源、氮气作反应气体溅射半导体材料SiAl重量比Si:Al＝90:10，渗入少量氧气。
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