WO2015008360A1 - 太陽電池モジュール用ダイオード装置 - Google Patents

太陽電池モジュール用ダイオード装置 Download PDF

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Publication number
WO2015008360A1
WO2015008360A1 PCT/JP2013/069494 JP2013069494W WO2015008360A1 WO 2015008360 A1 WO2015008360 A1 WO 2015008360A1 JP 2013069494 W JP2013069494 W JP 2013069494W WO 2015008360 A1 WO2015008360 A1 WO 2015008360A1
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Prior art keywords
diode
terminal
solar cell
cell module
diode device
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PCT/JP2013/069494
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English (en)
French (fr)
Japanese (ja)
Inventor
竜二 末本
康裕 竹
新井　寿和
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新電元工業株式会社
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Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to PCT/JP2013/069494 priority Critical patent/WO2015008360A1/ja
Priority to JP2013557982A priority patent/JP5709335B1/ja
Priority to CN201380002207.6A priority patent/CN104508833B/zh
Publication of WO2015008360A1 publication Critical patent/WO2015008360A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4516—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a diode device for a solar cell module, and more particularly to a structure of a diode device for a solar cell module used for a bypass circuit of a solar cell.
  • the solar cell module is composed of a plurality of solar cells. Since the electromotive force of each individual solar battery cell is small, the electromotive force of the entire solar battery cell is increased by connecting a plurality of solar battery cells in series.
  • the plurality of solar cells each receive the same amount of sunlight.
  • the amount of reflected light decreases and the electromotive force decreases.
  • the electromotive force of a specific solar battery cell is reduced, the amount of current passing through the solar battery cell is limited, and as a result, the power generation amount of the entire solar battery module is greatly reduced.
  • a diode is connected in parallel to each solar cell as a bypass circuit.
  • a solar cell module terminal box using a bypass circuit is disclosed in Patent Document 1, for example.
  • FIG. 5 is a plan view showing a terminal box for a solar cell module disclosed in Patent Document 1.
  • This patent document 1 discloses a solar cell module terminal box 10 in which a plurality of half-covered diodes 12, 12. Each half-coated diode 12 includes a lead terminal 14. Each half-coated diode 12 has a lead terminal 14 connected to an intermediate terminal plate 16, and this intermediate terminal plate 16 is connected to an electrode 17. That is, the half-coated diode 12 is connected to the electrode 17 through the intermediate terminal plate 16.
  • a diode chip is accommodated in the half-covered diode 12 in the terminal box 10 for a solar cell module having the configuration shown in Patent Document 1.
  • the diode chip is connected to a terminal provided outside the half-coated diode via a lead wire, an intermediate terminal plate, or the like.
  • one diode chip may be accommodated in a diode package, or a plurality of diode chips may be accommodated.
  • the heat dissipation varies depending on the connection form between each diode chip and the terminal. When the heat dissipation varies, a diode with low heat dissipation may progress more quickly than other diodes.
  • This invention is made
  • the solar cell module diode device of the present invention is a solar cell module diode device constituting a bypass circuit of the solar cell in a solar cell module formed by connecting a plurality of solar cells in series, A diode chip having an anode and a cathode; a diode element comprising a first terminal provided on the anode; and a second terminal provided on the cathode; and a molding material for accommodating three or more of the diode elements.
  • the first terminal of at least one of the three or more diode elements is directly joined to the second terminal of the other diode element.
  • the second terminals are arranged side by side along a plane, and a first flat surface parallel to the plane is formed on an outer surface of the molding material, and a first heat radiating member is formed on the first flat surface. It is formed.
  • a second flat surface facing the first flat surface across the one flat surface is formed on the outer surface of the mold material, and a second heat radiating member is further formed on the second flat surface.
  • the three or more diode elements are electrically connected in series.
  • the diode elements are arranged so as to be substantially equidistant from each other on the one plane.
  • the diode device for a solar cell module of the present invention the first terminal of one diode element and the second terminal of the other diode element were directly joined without going through an inclusion.
  • the diode elements are not connected to each other through an inclusion such as a lead wire in which heat is not easily propagated, so that the heat dissipation can be made uniform and the heat dissipation can be improved.
  • FIG. 1 is a plan view and a circuit diagram showing a diode device for a solar cell module according to the present invention.
  • FIG. 1A is a plan view in which a part of a molding material of a diode device for a solar cell module is broken
  • FIG. 1B is a plan view along the thickness direction
  • FIG. 1C is for a solar cell module. It is the circuit diagram which showed the electrical connection of the diode element with which the diode apparatus was equipped.
  • the diode device 20 for a solar cell module in the present embodiment includes three diode elements 24A, 24B, and 24C electrically connected in series, and a molding material 25 that accommodates the three diode elements 24A, 24B, and 24C, Is included.
  • the diode element 24A has a diode chip 21A including an anode 21Aa and a cathode 21Ab, a first terminal 22A connected to the anode 21Aa, and a second terminal 23A connected to the cathode 21Ab.
  • the diode element 24B has a diode chip 21B having an anode 21Ba and a cathode 21Bb, a first terminal 22B connected to the anode 21Ba, and a second terminal 23B connected to the cathode 21Bb. .
  • the diode element 24C includes a diode chip 21C having an anode 21Ca and a cathode 21Cb, a first terminal 22C connected to the anode 21Ca, and a second terminal 23C connected to the cathode 21Cb. ing.
  • Each of the diode chips 21A, 21B, and 21C has a plate-like outer shape that forms a quadrangle when viewed in plan, for example.
  • Anodes 21Aa, Ba, and Ca are formed on one surface side of each of the diode chips 21A, 21B, and 21C, and cathodes 21Ab, Bb, and Cb are formed on the other surface side.
  • the diode chips 21 ⁇ / b> A, 21 ⁇ / b> B, and 21 ⁇ / b> C are arranged on the one plane 25 ⁇ / b> F of the molding material 25 so as to be substantially equidistant from each other.
  • the diode chips 21A, 21B, and 21C are arranged so as to form a substantially triangle T that is substantially equidistant from each other.
  • the diode chips 21A, 21B, and 21C may be, for example, PN diodes or Schottky barrier diodes.
  • One end 22Aa of the first terminal 22A of the diode element 24A is directly joined to the anode 21Aa of the diode chip 21A.
  • the other end 22Ab of the first terminal 22A is directly joined to the second terminal 23B of the diode element 24B.
  • One end 22Ba of the first terminal 22B of the diode element 24B is directly joined to the anode 21Ba of the diode chip 21B.
  • the other end 22Bb of the first terminal 22B is directly joined to the second terminal 23C of the diode element 24C.
  • One end 22Ca of the first terminal 22C of the diode element 24C is directly joined to the anode 21Ca of the diode chip 21C.
  • the other end 22 ⁇ / b> Cb of the first terminal 22 ⁇ / b> C is directly joined to the internal terminal (inner lead) 26.
  • joining is performed using a joining material such as solder or a conductive adhesive.
  • a joining material such as solder or a conductive adhesive.
  • the method and the method of joining by welding are mentioned.
  • the direct bonding referred to in the present invention refers to the first terminals 22A, 22B, 22C, the second terminals 23A, 23B, 23C, and the internal terminals 26, and other members (inclusions) such as intermediate terminal plates and lead wires. It refers to a bonding form in which bonding is performed by using a bonding material such as solder or a conductive adhesive without being interposed, or directly bonded by welding.
  • Each of the first terminals 22A, 22B, and 22C is made of, for example, an elongated rectangular metal plate.
  • the second terminals 23A, 23B, and 23C are each made of, for example, a polygonal metal plate that is larger than the cathodes 21Ab, 21Bb, and Cb.
  • the metal plates constituting the first terminals 22A, 22B, and 22C and the second terminals 23A, 23B, and 23C are made of conductive materials such as Cu, Al, Zn, Ag, Ni, Au, and alloys containing them. A high metal is preferred.
  • the second terminals 23A, 23B, 23C and the internal terminal 26 are arranged side by side along one plane (one of the inner surfaces) 25F in the internal space that accommodates the diode elements 24A, 24B, 24C in the molding material 25. Yes.
  • the one plane 25F has a substantially rectangular shape in plan view.
  • the second terminal 23A is a plane in which a part of the second terminal 23A faces a part of the first side 25a of the substantially flat one plane 25F in plan view and a part of the other sides faces a central part of the one plane 25F.
  • This is a polygonal metal plate.
  • the second terminal 23B has a substantially rectangular shape extending from a part of the first side 25a of the one plane 25F to the entire second side 25b continuous to the first side 25a and a part of the third side 25c continuous to the second side 25b. It is a metal plate.
  • the second terminal 23C is a polygonal metal plate that extends so as to connect a part of the third side 25c of the one plane 25F and a part of the first side 25a.
  • the internal terminal 26 is a substantially rectangular metal plate that extends from a part of the third side 25c of the one plane 25F to the entire fourth side 25d connected to the third side 25c and a part of the first side 25a.
  • the second terminals 23A, 23B, 23C and the internal terminals 26 are electrically independent and are formed so as not to contact each other.
  • External terminals (outer leads) 27A, 27B, 27C, and 27D are directly joined to portions where the second terminals 23A, 23B, and 23C and the internal terminal 26 face the first side 25a, respectively.
  • the external terminals 27 ⁇ / b> A, 27 ⁇ / b> B, 27 ⁇ / b> C, and 27 ⁇ / b> D are formed of elongated metal plates that extend in parallel to each other in a direction away from the molding material 25.
  • the external terminals 27A, 27B, 27C, and 27D are exposed to the outside of the molding material 25 except for most of them, that is, portions that are joined to the second terminals 23A, 23B, and 23C and the internal terminal 26, respectively.
  • the solar cell module diode device 20 is electrically connected to the solar cell module 30 (see FIG. 2) via the external terminals 27A, 27B, 27C, and 27D.
  • the example of the electrical connection form of the diode apparatus 20 for solar cell modules and the solar cell module 30 is mentioned later.
  • the external terminals 27A, 27B, 27C, and 27D may be made of a highly conductive metal such as, for example, Cu, Al, Zn, Ag, Ni, Au, or an alloy containing these.
  • a joining material such as solder or a conductive adhesive is used as a method of directly joining the second terminals 23A, 23B, 23C and the internal terminals 26 and the external terminals 27A, 27B, 27C, 27D. And a method of joining by welding.
  • the molding material 25 serves as a housing case that houses the three diode elements 24A, 24B, and 24C.
  • the molding material 25 is a rectangular parallelepiped whose outer shape is, for example, a plate shape.
  • a first flat surface 25P1 parallel to the one plane 25F is formed on the outer surface of the molding material 25.
  • a first heat radiating member 28 is formed on the first flat surface 25P1.
  • a second flat surface 25P2 is formed on the outer surface of the molding material 25 so as to face a part of the first flat surface 25P1 with the one flat surface 25F interposed therebetween.
  • a second heat radiating member 29 is provided on the second flat surface 25P2.
  • the first heat radiating member 28 and the second heat radiating member 29 may be members formed in a shape having a large surface area, such as a large number of fins extending in a direction perpendicular to the first flat surface 25P1 and the second flat surface 25P2. That's fine.
  • the first heat radiating member 28 and the second heat radiating member 29 may be made of a metal having excellent thermal conductivity, such as Cu, Al, or an alloy containing these metals. Examples of the method of attaching the first heat radiating member 28 and the second heat radiating member 29 to the outer surface of the mold material 25 include screwing and bonding using an adhesive having excellent thermal conductivity.
  • the diode element 24A, the diode element 24B, and the diode element 24C are connected in series.
  • One end of the diode element 24A is connected to the external terminal 27B.
  • An external terminal 27B is connected between the other end of the diode element 24A and one end of the diode element 24B.
  • An external terminal 27C is connected between the other end of the diode element 24B and one end of the diode element 24C.
  • the external terminal 27D is connected to the other end of the diode element 24C.
  • FIG. 2 is an explanatory diagram showing electrical connection when the solar cell module diode device of the present invention is connected to the solar cell module.
  • the solar cell module 30 is configured by electrically connecting three solar cells 31A, 31B, and 31C in series.
  • Each of the solar cells 31A, 31B, 31C performs photoelectric conversion by the incidence of sunlight.
  • Each output voltage of the solar cells 31A, 31B, 31C is, for example, about 0.5V.
  • the output voltage of the solar cell module 30 by connecting these solar cells 31A, 31B, 31C in series is, for example, about 1.5V.
  • the solar cell module diode device 20 constitutes a bypass circuit of the solar cell module 30.
  • the anode terminal of the diode element 24 ⁇ / b> A is connected to one terminal of the solar cell module 30.
  • the cathode terminal of the diode element 24A is connected to the anode terminal of the diode element 24B.
  • the cathode terminal of the diode element 24B is connected to the anode terminal of the diode element 24C.
  • the other terminal of the solar cell module 30 is connected to the cathode terminal of the diode element 24C.
  • connection point between the cathode terminal of the diode element 24A and the anode terminal of the diode element 24B is connected to the connection point between the solar battery cell 31A and the solar battery cell 31B.
  • a connection point between the cathode terminal of the diode element 24B and the anode terminal of the diode element 24C is connected to a connection point between the solar battery cell 31B and the solar battery cell 31C.
  • the current output from the solar battery cell 31A constitutes a bypass circuit. It is input to the solar battery cell 31C via the diode element 24B.
  • the solar cell module 30 can bypass the current by the diode element connected in parallel to the defective solar cell and output power. it can.
  • the diode elements 24A, 24B, 24C as a whole can constitute a bypass circuit for this specific solar cell module 30.
  • the defective solar cell module 30 can be bypassed and the electric power obtained by photoelectric conversion of the other solar cell modules 30 can be output.
  • the operation of the solar cell module diode device shown in FIG. 1 will be described.
  • the first terminal 22A and the second terminal 23B, and the first terminal 22B and the second terminal 23C are directly joined. Accordingly, heat can be easily propagated and heat dissipation can be improved as compared with a configuration in which the diode elements are connected to each other via an inclusion such as a lead wire that does not easily propagate heat.
  • the shape, arrangement, and length of the lead wires and intermediate terminal plates for connecting the diode elements are not the same between the diode elements, the heat dissipation is not uniform. Is not required, and thus temperature deviation due to inclusions is eliminated, so that the temperature can be made uniform.
  • a member such as an intermediate terminal plate is not interposed at the junction of the first terminal 22A and the second terminal 23B and the first terminal 22B and the second terminal 23C.
  • a space for disposing a metal plate having a relatively large area such as an intermediate terminal plate is not required, and the solar cell module diode device 20 can be downsized.
  • the diode elements 24A, 24B, and 24C are directly joined in series and covered with the molding material 25 to form a single chip, so that the solar cell module diode device 20 can be reduced in size and weight. it can.
  • the first terminal 22A and the second terminal 23B, and the first terminal 22B and the second terminal 23C are directly joined, so that a member such as an intermediate terminal plate is interposed. Since there is no need to make them, the number of junction points can be reduced. As a result, the number of processes such as soldering or welding at the joining point can be greatly reduced, and inclusions are also unnecessary, so that the manufacturing cost can be reduced.
  • the diode chips 21A, 21B, and 21C are arranged on the one plane 25F of the molding material 25 at substantially equal distances, for example, the diode chips 21A, 21B, and 21C are By arranging them so as to form a substantially triangular T that is substantially equidistant from each other, heat is uniformly propagated between the adjacent diode chips 21A, 21B, and 21C, and the heat of the diode elements 24A, 24B, and 24C is heated. This non-uniformity can be reduced more efficiently.
  • the first flat surface 25 ⁇ / b> P ⁇ b> 1 is formed on the outer surface of the molding material 25.
  • the first heat radiating member 28 such as a heat radiating fin on the first flat surface 25P1.
  • the heat generated in the diode elements 24A, 24B, 24C accommodated in the molding material 25 can be efficiently radiated to the outside via the first heat radiating member 28.
  • the non-uniformity of heat between the diode elements 24A, 24B, 24C is reduced, and only a specific diode element, for example, the diode element 24B sandwiched between the diode element 24A and the diode element 24C has a particularly high temperature. It is possible to suppress the thermal deterioration from proceeding faster than 24A and 24C.
  • a second heat radiation member 29 such as a heat radiation fin can be installed on the second flat surface 25P2. It becomes easy.
  • the second heat radiating member 29 on the second flat surface 25P2 of the molding material 25, the heat generated in the diode elements 24A, 24B, 24C can be radiated to the outside more efficiently.
  • One or both of the first heat radiating member 28 and the second heat radiating member 29 may be installed.
  • the number of diode elements is three.
  • the present invention is not limited to this, and the number of diode elements may be three or more and any number connected in series. That's fine.
  • the first terminal whose one end is directly joined to the anode of the diode chip is made of an elongated metal plate.
  • the first terminal is not limited to an elongated metal plate.
  • the first terminal can be composed of a bonding wire such as a fine metal wire having excellent thermal conductivity.
  • Specific examples of the fine metal wire excellent in thermal conductivity include a copper wire, an aluminum wire, and a stainless wire.
  • the diode device for solar cell module of the present invention can be manufactured simply by changing the connection form of the diode device in which a plurality of diode elements are connected by bridge wiring.
  • the diode device for the solar cell module of the present invention can also be manufactured by changing the connection form in the same manner. Thereby, a diode device for a solar cell module with a series wiring and a diode device with a bridge wiring can be manufactured at low cost.
  • FIG. 3 is a plan view and a circuit diagram showing the solar cell module diode device of the second embodiment.
  • FIG. 3A is a plan view in which a part of the molding material of the diode device for a solar cell module according to the present invention is broken, and
  • FIG. 3B is a circuit diagram showing electrical connection of the diodes.
  • the same number is attached
  • the diode device 40 for a solar cell module according to the second embodiment includes three diode element pairs 44A, 44B, 44C electrically connected in series, and a molding material that accommodates the three diode element pairs 44A, 44B, 44C. 25.
  • the diode element pair 44A has a diode element 44A1 and a diode element 44A2
  • the diode element pair 44B has a diode element 44B1 and a diode element 44B2
  • the diode element pair 44C has a diode element 44C1 and a diode element 44C2 connected in parallel. . That is, a pair of diode pairs connected in parallel to each other is connected in series (see FIG. 3B).
  • the diode element 44A1 includes a diode chip 41A1, a first terminal 42A1, and a second terminal 43A.
  • the diode element 44A2 includes a diode chip 41A2, a first terminal 42A2, and a second terminal 43A.
  • the second terminal 43A is shared by the diode element 44A1 and the diode element 44A2.
  • the diode element 44B1 includes a diode chip 41B1, a first terminal 42B1, and a second terminal 43B.
  • the diode element 44B2 includes a diode chip 41B2, a first terminal 42B2, and a second terminal 43B.
  • the second terminal 43B is shared by the diode element 44B1 and the diode element 44B2.
  • the diode element 44C1 includes a diode chip 41C1, a first terminal 42C1, and a second terminal 43C.
  • the diode element 44C2 includes a diode chip 41C2, a first terminal 42C2, and a second terminal 43C.
  • the second terminal 43C is shared by the diode element 44C1 and the diode element 44C2.
  • Two diode chips 41A1 and 41A2 are connected to the second terminal 43A, two diode chips 41B1 and 41B2 are connected to the second terminal 43B, and two diode chips 41C1 and 41C2 are connected to the second terminal 43C. Is connected.
  • a second terminal 43A connected to the cathodes of the diode chips 41A1 and 41A2, a second terminal 43B connected to the cathodes of the diode chips 41B1 and 41B2, and a diode chip 41C1.
  • 41C2 and the second terminal 43C connected to the cathode and the internal terminal 26 are arranged side by side.
  • each of the first terminals 42A1, 42A2, 42B1, 42B2, 42C1, and 42C2 is connected to each anode of the diode chips 41A1, 41A2, 41B1, 41B2, 41C1, and 41C2.
  • the other ends of the first terminals 42A1 and 42A2 of the diode element pair 44A are directly joined to the second terminal 43B of the diode element pair 44B.
  • the other ends of the first terminals 42B1 and 42B2 of the diode element pair 44B are directly joined to the second terminal 43C of the diode element pair 44C.
  • the other ends of the first terminals 42C1 and 42C2 of the diode element pair 44C are directly joined to the internal terminals.
  • the solar cell module diode device 40 of the present embodiment a plurality of diode element pairs in which two diode elements are connected in parallel are connected in series, so even if the capacity of each individual diode chip is small, The breakdown voltage can be kept high as a whole.
  • the diode elements be equidistant from each other.
  • the diode elements are arranged at positions corresponding to the vertices of each regular square.
  • the diode elements are arranged at positions corresponding to the apexes of the regular pentagon.
  • a current is supplied to the solar cell module diode device of the present invention shown in FIG.
  • a current was passed through each of the three diode elements 24A, 24B, and 24C using the solar cell module diode device 20 shown in FIG.
  • the current was changed in steps of 2 [A], 5 [A], 7 [A], 9 [A], 10 [A], and 12 [A].
  • the temperature measurement was performed from the outer surface side of the molding material 25. The measurement results thus obtained are shown in FIG.
  • the horizontal axis is the current value, and the vertical axis is the lead temperature.
  • D1 a current is passed through the diode element 24A.
  • D2 the current is passed through the diode element 24A and the current is passed through the diode element 24B.
  • D3 the current is passed through the diode elements 24A and 24B and the current is passed through the diode element 24C.
  • the heat dissipation of the solar cell module diode device 20 is not maintained well, at the same current value, the more the number of diode elements to which the current is applied, the more heat is trapped inside and the temperature increases. Get higher. That is, it is considered that the temperature difference between the case where there is one diode element and the case where there are a plurality of diode elements increases as the current value increases.
  • SYMBOLS 20 Solar cell module diode device, 21A, 21B, 21C ... Diode chip, 22A, 22B, 22C ... First terminal, 23A, 23B, 23C ... Second terminal, 24A, 24B, 24C ... Diode element, 25 ... Mold Wood.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Photovoltaic Devices (AREA)
PCT/JP2013/069494 2013-07-18 2013-07-18 太陽電池モジュール用ダイオード装置 WO2015008360A1 (ja)

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PCT/JP2013/069494 WO2015008360A1 (ja) 2013-07-18 2013-07-18 太陽電池モジュール用ダイオード装置
JP2013557982A JP5709335B1 (ja) 2013-07-18 2013-07-18 太陽電池モジュール用ダイオード装置
CN201380002207.6A CN104508833B (zh) 2013-07-18 2013-07-18 太阳能电池模块用二极管装置

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303988A (ja) * 2002-04-10 2003-10-24 Sumitomo Wiring Syst Ltd 太陽電池モジュール用端子ボックス装置
JP2005332869A (ja) * 2004-05-18 2005-12-02 Sansha Electric Mfg Co Ltd 太陽電池モジュール接続具
JP2007128972A (ja) * 2005-11-01 2007-05-24 Sumitomo Wiring Syst Ltd 太陽電池モジュール用端子ボックス
JP2011091190A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 太陽電池用素子装置
WO2011132748A1 (ja) * 2010-04-21 2011-10-27 京セラ株式会社 太陽電池モジュール
JP2012527767A (ja) * 2009-05-22 2012-11-08 ソラレッジ テクノロジーズ リミテッド 電気絶縁された熱放散接続箱

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303988A (ja) * 2002-04-10 2003-10-24 Sumitomo Wiring Syst Ltd 太陽電池モジュール用端子ボックス装置
JP2005332869A (ja) * 2004-05-18 2005-12-02 Sansha Electric Mfg Co Ltd 太陽電池モジュール接続具
JP2007128972A (ja) * 2005-11-01 2007-05-24 Sumitomo Wiring Syst Ltd 太陽電池モジュール用端子ボックス
JP2012527767A (ja) * 2009-05-22 2012-11-08 ソラレッジ テクノロジーズ リミテッド 電気絶縁された熱放散接続箱
JP2011091190A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 太陽電池用素子装置
WO2011132748A1 (ja) * 2010-04-21 2011-10-27 京セラ株式会社 太陽電池モジュール

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