WO2014206165A1 - 一种低光衰大功率led路灯及其制作方法 - Google Patents
一种低光衰大功率led路灯及其制作方法 Download PDFInfo
- Publication number
- WO2014206165A1 WO2014206165A1 PCT/CN2014/078442 CN2014078442W WO2014206165A1 WO 2014206165 A1 WO2014206165 A1 WO 2014206165A1 CN 2014078442 W CN2014078442 W CN 2014078442W WO 2014206165 A1 WO2014206165 A1 WO 2014206165A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type semiconductor
- semiconductor element
- semiconductor elements
- oxide ceramic
- circuit board
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 138
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 8
- 239000004519 grease Substances 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims abstract 16
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims abstract 16
- 239000000919 ceramic Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 claims description 14
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 238000005057 refrigeration Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 21
- 238000001816 cooling Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 229910052574 oxide ceramic Inorganic materials 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005562 fading Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/08—Lighting devices intended for fixed installation with a standard
- F21S8/085—Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light
- F21S8/086—Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light with lighting device attached sideways of the standard, e.g. for roads and highways
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/54—Cooling arrangements using thermoelectric means, e.g. Peltier elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/71—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks using a combination of separate elements interconnected by heat-conducting means, e.g. with heat pipes or thermally conductive bars between separate heat-sink elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
- F21W2131/103—Outdoor lighting of streets or roads
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Definitions
- the invention relates to a low light decay high power LED street lamp and a manufacturing method thereof, and belongs to the technical field of high power LED street lamps.
- LED light-emitting diodes have been widely used as light sources for illumination because of their advantages of energy saving, high brightness, and small size.
- the heat dissipation structure of the LED light source in the prior art generally uses a heat sink of an aluminum alloy structure or an aluminum injection part with a weight to dissipate heat.
- the surface has a simple structure, it has a poor heat dissipation effect and is manufactured.
- the cost is high, and it can not effectively reduce the temperature of the LED lamp during operation.
- the use effect is not ideal. It is not suitable for use on high-power LED lamps with a power of 150 watts or more.
- due to the heat dissipation of the profile aluminum it will be larger.
- the step temperature often causes the LED light-emitting diode as a light source to work under high temperature conditions.
- the LED light-emitting diode can even work at a temperature higher than 70 ° C, so that the LED light-emitting diode is prematurely aged. A large amount of light decay occurs, and its luminous efficiency is greatly reduced, which not only increases the energy consumption of the LED light-emitting diode, but also greatly shortens its service life and increases the use cost; and the existing high-power LED street light is For the need of heat dissipation, the heat sink must be made large, so there are problems such as large volume and heavy weight. Therefore, the existing LED street light using LED light-emitting diodes as a light source is not ideally constructed, and the energy-saving advantages of existing LED light sources cannot be fully utilized.
- the object of the present invention is to provide a low-light-fat high-power LED street lamp with simple structure, small volume, light weight, high luminous efficiency, long service life and low energy consumption, and a manufacturing method thereof, to overcome the prior art. insufficient.
- the present invention is achieved by: a method for fabricating a low-light-loss high-power LED street lamp according to the present invention, the method comprising: dissipating a circuit board on which an LED bulb is mounted by using an N-type semiconductor element and a P-type semiconductor element as a cooling element; When the N-type semiconductor element and the P-type semiconductor element are used as the cooling element, the semiconductor ingot for forming the N-type semiconductor element or the P-type semiconductor element is previously formed into a cone-shaped ingot having a large diameter and a small diameter at the other end.
- the cone-shaped semiconductor ingot is then sliced to produce a wafer of the same thickness, each wafer
- the small diameter end serves as the head end
- the large diameter end serves as the tail end
- the color mark number is marked on the tail end surface of each wafer; then the conical surface of each wafer is cut and granulated, and each wafer is cut and granulated.
- the semiconductor of the polygonal cylinder shape is an N-type semiconductor element or a P-type semiconductor element provided with a head end and a tail end, and then the N-type semiconductor element and the P-type semiconductor element are arranged in a matrix
- the method is arranged between the upper yttrium oxide ceramic piece and the lower yttria ceramic piece provided with the conductive circuit, so that the N-type semiconductor element and the P-type semiconductor element of each column are connected in series, and the head of the N-type semiconductor element of each column is connected in series.
- the end is connected to the tail end of the P-type semiconductor element or the tail end of the N-type semiconductor element is connected to the head end of the P-type semiconductor element, and then the lower yttria ceramic piece is pasted through the graphene thermal grease layer to be mounted on the LED bulb
- a heat sink is mounted on the upper yttrium oxide ceramic piece, and then the circuit board and the heat sink are all installed in the street lamp cover.
- a low-light-loss high-power LED street lamp of the present invention constructed according to the above method, comprising a street lamp cover and a circuit board mounted with an LED bulb and a DC power supply device, wherein the circuit board is connected to the DC power supply device through a wire, and the circuit board and the DC
- the power supply device is installed in the street lamp cover, and a transparent cover is arranged at the bottom of the street lamp cover, and at least one piece of lower yttria ceramic piece is connected on the back side of the circuit board through the graphene thermal grease layer, and is disposed on the lower yttria ceramic piece.
- an N-type semiconductor element and a P-type semiconductor element arranged in a matrix shape are connected between the lower yttria ceramic sheet and the upper yttria ceramic sheet, and are formed on one end surface of the N-type semiconductor element and the P-type semiconductor element
- a conductive color mark is provided, and the end face provided with the color mark is the tail end of the N-type semiconductor element or the P-type semiconductor element, and the other end of the N-type semiconductor element or the P-type semiconductor element without the color mark is the head end
- Each of the N-type semiconductor elements and the P-type semiconductor elements respectively pass through the upper conductive sheets disposed on the upper yttrium oxide ceramic sheets
- the lower conductive sheets disposed on the lower yttria ceramic sheets are connected in series with each other, and the head ends of the N-type semiconductor elements of each column in series are connected to the tail ends of the P-type semiconductor elements or the tail ends of the N-type semiconductor elements of each column and the P-type semiconductor The head ends of the elements are connected
- the heat sink is composed of a heat-dissipating aluminum base, a heat pipe and a heat sink, and the heat-dissipating aluminum base is pressed against the heat sink.
- the lower portion of the heat pipe is flat and embedded in the hole at the bottom of the heat dissipation aluminum base, and the flat surface of the lower portion of the heat pipe is attached to the beryllium copper plate block, and the heat sink is connected to the upper portion of the heat pipe.
- the heat-dissipating aluminum base is fixed to the circuit by a screw to be filled with a heat-conducting liquid in the heat-conducting pipe of the heat sink.
- a heat dissipation hole is provided on a side surface of the street lamp cover.
- the present invention performs coloring mark processing on the semiconductor ingot slicing on the basis of the conventional fabrication of the N-type semiconductor element and the P-type semiconductor element, thereby being able to easily recognize the N-type semiconductor.
- the head end or the trailing end of the element or the P-type semiconductor element, and the head or tail end is arranged in a direction that coincides with the arrangement direction on the ingot when not sliced.
- the head end and the tail end cannot be distinguished, and the head and the tail are confusedly connected to each other, resulting in a decrease in the working efficiency of the fabricated semiconductor cold reactor galvanic element.
- the order connection between the head end and the tail end can be conveniently performed, so that the working efficiency of each of the N-type and P-type semiconductor elements can be effectively improved, and Effectively improve the cooling effect of the entire cooling and cooling device.
- the temperature difference between the cold end and the hot end is about 73 to 78 degrees, and the cooling effect is much better than the existing one.
- the present invention directly forcibly cools or thermally neutralizes the circuit board of the LED light source through the N-type and P-type semiconductor elements, thereby greatly reducing the temperature during operation of the LED light source circuit board.
- the LED light-emitting diode bulb on the circuit board on which the LED light bulb is mounted will normally emit light
- the N-type and The semiconductor cold-stack galvanic component composed of a P-type semiconductor component starts to perform a cooling operation.
- the semiconductor cold-stack galvanic component operates, the cold end of the semiconductor cold-stack galvanic component cools and cools the LED light source circuit board, and the semiconductor cold reactor
- the heat from the hot end of the galvanic element is transferred to the heat sink through the heat pipe of the heat sink, which dissipates heat into the air.
- the 200 watt low light decay high power LED street light of the invention has a weight of less than 5 kilograms, which is about 1/3 of the weight of the conventional same power LED street light, and its volume is about 1/2 of the volume of the conventional same power LED street light.
- the present invention not only has the advantages of good heat dissipation effect, can greatly reduce the working temperature of the LED light source, and has no light decay, but also has long service life, low use cost, and good work stability. And can improve the working efficiency of LED light-emitting diode bulbs.
- Figure 1 is a schematic structural view of the present invention
- FIG. 2 is a cross-sectional view showing the structure of the A-A of the lamp cover and the transparent cover of FIG. DESCRIPTION OF REFERENCE NUMERALS: 1-way lamp housing, 1. 1- vent, 2-circuit board, 3-LED bulb,
- 4-graphene thermal grease layer 5-transparent cover, 6-N semiconductor component, 7-P semiconductor component, 8-upper yttrium oxide ceramic chip, 9-lower yttrium oxide ceramic chip, 10-upper conductive film, 11-lower conductive sheet, 12-wire, 13-DC power supply unit, 14-inch copper plate clamp, 15-heat sink, 15. 1-heat-dissipating aluminum base, 15. 2-heat pipe, 15. 3-heat sink , 15. 4-heat-conductive liquid, 16-screw. detailed description
- a method for fabricating a low-light-loss high-power LED street lamp according to the present invention includes using a conventional N-type semiconductor element and a P-type semiconductor element as a cooling element to perform a circuit board on which an LED light-emitting diode bulb is mounted
- the conventional N-type semiconductor element and P-type semiconductor element are used as the cooling element, the semiconductor ingot for fabricating the N-type semiconductor element or the P-type semiconductor element is previously made into a large-diameter cone having a large diameter and a small diameter at the other end.
- the shape of the ingot (the diameter of the small diameter end of the cone-shaped ingot can be determined according to the needs of use, the taper can be controlled between 2 and 5 degrees), and then the cone-shaped semiconductor ingot is sliced to obtain
- the small diameter end of each wafer is used as the head end and the large diameter end is used as the tail end, and the tail end surface of each wafer is colored with a mark number; then the conical surface of each wafer is cut and granulated.
- Each of the wafers is cut into granules into the same polygonal cylinder shape, and the semiconductor of the polygonal cylinder shape is provided with a head end and a tail end.
- N-type semiconductor element or a P-type semiconductor element An N-type semiconductor element or a P-type semiconductor element, and then the N-type semiconductor element and the P-type semiconductor element are arranged in a matrix Between the upper yttria ceramic sheet and the lower yttria ceramic sheet provided with a conductive circuit, so that each column
- FIG. 1 and FIG. 2 are schematic diagrams showing a structure of a low-light-fading high-power LED street lamp according to the present invention.
- the low-light-fading high-power LED street lamp includes a street lamp cover 1 and a circuit mounted with the LED bulb 3.
- the board 2 and the DC power supply unit 13, the street lamp cover 1 and the circuit board 2 on which the LED bulb 3 is mounted and the DC power supply unit 13 can be made of the prior art, and the street lamp cover 1 should be made of plastic or metal material.
- the finished lamp cover shell is connected with the pole bracket, and the circuit board 2 is connected to the DC power supply device 13 through wires in a conventional manner, and the circuit board 2 and the DC power supply device 13 are installed in the street lamp cover 1
- Connect at least one piece of lower yttria ceramic sheet 9 through the graphene thermal grease layer 4 on the back side of the circuit board 2 (the number of lower yttria ceramic sheets 9 connected to the back surface of the circuit board 2 can be determined according to the area of the circuit board 2 used.
- the lower yttria ceramic sheet 9 When manufacturing, it is preferable to stick the lower yttria ceramic sheet 9 on the back surface of the circuit board 2, and then to place the yttria ceramic sheet 8 on the lower yttria ceramic sheet 9, while at the same time, the lower yttria ceramic sheet 9 and the upper yttria ceramics sheet
- the N-type semiconductor element 6 and the P-type semiconductor element 7 which are arranged in a conventional matrix shape arrangement between the terminals 8 are electrically connected to each other on both end faces of the N-type semiconductor element 6 and the P-type semiconductor element 7 during mounting.
- each column of the N-type semiconductor element 6 and the P-type semiconductor element 7 are respectively passed through the upper conductive sheet 10 provided on the upper yttria ceramic sheet 8 and the lower conductive sheet 11 disposed on the lower yttria ceramic sheet 9.
- the head ends of the N-type semiconductor elements 6 of each column in series are connected to the tail ends of the P-type semiconductor elements 7 or the tail ends of each of the columns of N-type semiconductor elements 6 are connected to the head ends of the P-type semiconductor elements 7.
- the power supply device 13 is connected; on each of the upper surfaces of the yttrium oxide ceramic sheets 8, a copper-plate compact 14 having high mechanical strength and heat transfer performance is attached to
- the heat sink 15 is mounted on the beryllium copper plate block 14; the heat sink 15 is composed of a heat dissipating aluminum base 15.1, a heat pipe 15.2 and a heat sink 15.3 (as shown in FIG. 2 and FIG.
- the heat dissipating aluminum base 15.1 is pressed against the crucible.
- the lower portion of the heat pipe 15.2 is formed into a flat shape and embedded in the hole at the bottom of the heat dissipation aluminum base 15.1, and the flat surface of the lower portion of the heat pipe 15.2 is attached to the beryllium copper plate block 14, Then, the heat sink 15.3 is connected to the upper portion of the heat pipe 15.2, and the heat sink 15.3 is placed above the heat dissipation aluminum base 15.1, and then the heat dissipation aluminum base 15.1 is fixed to the circuit board 2 by screws 16 (when connecting Note that the screw 16 and the circuit board 2 are insulated from each other.
- the heat transfer liquid 15.2 can be filled in the heat pipe 15.2 of the heat sink 15, and when filling the heat transfer liquid 15.4, be careful not to fill
- the space inside the heat pipe 15.2 should be allowed to have a certain gap space in it, so that the heat transfer liquid 15.4 can flow therein.
- the heat transfer liquid 15.4 can be ordinary water, distilled water or transformer oil; Cooling effect, the cooling holes can be made on both sides symmetrically 1.1 streetlight housing 1; and finally mounted on the bottom of the housing 1 lights transparent cover 5 Serve.
- the transparent cover 5 can be made of glass or plexiglass in a conventional manner.
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DK14816753.9T DK3015764T3 (en) | 2013-06-25 | 2014-05-26 | High-power LED street lamp with low light error and method of producing it |
JP2016522204A JP6151448B2 (ja) | 2013-06-25 | 2014-05-26 | 低発光障害の高出力led街灯及びその製造方法 |
AU2014301911A AU2014301911B2 (en) | 2013-06-25 | 2014-05-26 | Low light failure, high-power led street lamp and method for manufacturing the same |
EP14816753.9A EP3015764B1 (en) | 2013-06-25 | 2014-05-26 | Low-light-failure high-power led road lamp and manufacturing method therefor |
US14/998,285 US9989238B2 (en) | 2013-06-25 | 2015-12-24 | Low light failure, high power led street lamp and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310257295.6 | 2013-06-25 | ||
CN201310257295.6A CN103398358B (zh) | 2013-06-25 | 2013-06-25 | 一种低光衰大功率led路灯及其制作方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/998,285 Continuation US9989238B2 (en) | 2013-06-25 | 2015-12-24 | Low light failure, high power led street lamp and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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WO2014206165A1 true WO2014206165A1 (zh) | 2014-12-31 |
Family
ID=49562037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2014/078442 WO2014206165A1 (zh) | 2013-06-25 | 2014-05-26 | 一种低光衰大功率led路灯及其制作方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9989238B2 (zh) |
EP (1) | EP3015764B1 (zh) |
JP (1) | JP6151448B2 (zh) |
CN (1) | CN103398358B (zh) |
AU (1) | AU2014301911B2 (zh) |
DK (1) | DK3015764T3 (zh) |
WO (1) | WO2014206165A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103398358B (zh) * | 2013-06-25 | 2015-10-21 | 陈志明 | 一种低光衰大功率led路灯及其制作方法 |
CN103353098B (zh) | 2013-06-25 | 2015-09-23 | 陈志明 | 一种大功率led灯降温器件及其制作方法 |
CN103742803A (zh) * | 2013-12-24 | 2014-04-23 | 孙雪刚 | 一种led灯泡 |
CN104214739A (zh) * | 2014-08-22 | 2014-12-17 | 浙江工业大学 | 大功率led石墨烯基散热装置 |
FR3026287B1 (fr) * | 2014-09-30 | 2017-02-24 | Seb Sa | Poignee amovible comprenant un generateur thermoelectrique |
CN106224794A (zh) * | 2016-08-31 | 2016-12-14 | 盛唐热能(天津)科技有限公司 | 大功率led灯 |
CN107246579A (zh) * | 2017-07-27 | 2017-10-13 | 湖州明朔光电科技有限公司 | 石墨烯智联led车前大灯 |
FR3080436A1 (fr) * | 2018-04-20 | 2019-10-25 | Jean Marie Andree | Lampe electrique a consommation reduite et dispositif d'eclairage public associe |
CN110349862A (zh) * | 2019-06-28 | 2019-10-18 | 天津荣事顺发电子有限公司 | 一种ic芯片自控温机构及其制备方法 |
CN115164445B (zh) * | 2022-07-15 | 2023-10-24 | 中国电子科技集团公司第十研究所 | 一种半导体热电制冷器结构及强化换热方法 |
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JP2016528672A (ja) | 2016-09-15 |
AU2014301911B2 (en) | 2017-10-12 |
EP3015764B1 (en) | 2018-09-19 |
EP3015764A4 (en) | 2016-06-29 |
DK3015764T3 (en) | 2018-12-10 |
AU2014301911A1 (en) | 2016-02-11 |
CN103398358A (zh) | 2013-11-20 |
CN103398358B (zh) | 2015-10-21 |
JP6151448B2 (ja) | 2017-06-21 |
US20160131357A1 (en) | 2016-05-12 |
US9989238B2 (en) | 2018-06-05 |
EP3015764A1 (en) | 2016-05-04 |
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