CN101471337B - 具良好散热性能的光源模组 - Google Patents

具良好散热性能的光源模组 Download PDF

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CN101471337B
CN101471337B CN2007102035081A CN200710203508A CN101471337B CN 101471337 B CN101471337 B CN 101471337B CN 2007102035081 A CN2007102035081 A CN 2007102035081A CN 200710203508 A CN200710203508 A CN 200710203508A CN 101471337 B CN101471337 B CN 101471337B
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insulating substrate
heat conductive
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light source
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CN101471337A (zh
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曹治中
江文章
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Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • H—ELECTRICITY
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    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements

Abstract

本发明涉及一种具良好散热性能的光源模组，其包括：一个热电致冷器，多个发光二极管芯片及一个金属线路层；该热电致冷器包括一第一导热绝缘基板，一与该第一导热绝缘基板相对设置的第二导热绝缘基板，以及设置在该第一导热绝缘基板与该第二导热绝缘基板之间的热电致冷单元组，该热电致冷单元组包括多个连接在一起的热电致冷单元；该多个发光二极管芯片及该金属线路层设置在该第一导热绝缘基板上且位于远离该第二导热绝缘基板的一侧，该多个发光二极管芯片外延生长在该第一导热绝缘基板上且分别与该金属线路层形成电连接。

Description

具良好散热性能的光源模组
技术领域
本发明涉及一种光源模组，尤其是一种具有良好散热性能的光源模组。 
背景技术
发光二极管(Light Emitting Diode，LED)为一种半导体光源，其电、光特性及寿命对温度敏感，在此，一种在温度变化过程中还能保持稳定光强的新型发光二极管可参见Yukio Tanaka等人在文献IEEE Transactions On Electron Devices，Vol.41，No.7，July 1994中的A Novel Temperature-Stable Light-Emitting Diode一文。一般而言，较高的温度会导致低落的内部量子效应并且寿命也会明显缩短；另一方面，半导体的电阻随着温度的升高而降低，滑落的电阻会带来较大的电流及更多的热产生，造成热累积现象的发生；此一热破坏循环往往会加速破坏高功率LED光源模组。 
如图1所示，一种典型的LED光源模组100包括：一个印刷电路板(Printed Circuit Board，PCB)101、多个发光元件102(如，LED)及一个散热元件103。印刷电路板101包括两个相对设置的表面(图未标示)。散热元件103与多个发光元件102分设在所述印刷电路板101的两个相对的表面上；所述印刷电路板101上设置有金属线路层以与多个发光元件102形成电连接。所述散热元件103可通过导热膏与印刷电路板101形成热性连接，其远离印刷电路板101的一侧通常设置有多个散热鳍片1031用以增大表面积以利于散热。 
然而，设置在该多个发光元件102与该散热元件103之间的印刷电路板101的导热性较差，并且散热元件103只能被动的将多个发光元件102发出的热量传导出去，导致该LED光源 模组100的散热性能较差。 
发明内容
下面将以实施例说明一种具良好散热性能的光源模组。 
一种具良好散热性能的光源模组，其包括：一个热电致冷器，多个发光二极管芯片及一个金属线路层；该热电致冷器包括一第一导热绝缘基板，一与该第一导热绝缘基板相对设置的第二导热绝缘基板，以及设置在该第一导热绝缘基板与该第二导热绝缘基板之间的热电致冷单元组，该热电致冷单元组包括多个连接在一起的热电致冷单元；该多个发光二极管芯片及该金属线路层设置在该第一导热绝缘基板上且位于远离该第二导热绝缘基板的一侧，该多个发光二极管芯片外延生长在该第一导热绝缘基板上且分别与该金属线路层形成电连接。 
相对于现有技术，所述多个发光二极管芯片设置在第一导热绝缘基板上且位于远离该第二导热绝缘基板的一侧，其产生的热量经过较短的距离即可传入该热电致冷器，提高了该热电致冷器对多个发光二极管芯片的散热效率。并且，该热电致冷器可对该多个发光二极管芯片的散热效率进行主动控制，由此可使该多个发光二极管芯片在一恒定的温度范围内工作，以保证该多个发光二极管芯片具有稳定的光电特性，提升该光源模组的工作效率。 
附图说明
图1是现有技术中的一种LED装置的侧视图。 
图2是本发明实施例的光源模组的截面示意图。 
图3是图2所示光源模组所包括的发光二极管采用覆晶封装的截面示意图。 
具体实施方式
下面将结合附图对本发明实施例作进一步的详细说明。 
参见图2，本发明实施例提供的具良好散热性能的光源模组20，其包括：一个热电致冷器(Thermo-electric Cooler，简称TEC)200，多个发光二极管芯片300，一个金属线路层400及散热鳍片500。 
该热电致冷器200包括一第一基板210，一与该第一基板210相对设置的第二基板220，以及设置在该第一基板210与该第二基板220之间的热电致冷单元组230。 
该第一基板210与该第二基板220均为陶瓷基板，其具有很好的绝缘性及导热性。可以理解的是，该第一基板210与该第二基板220也可以是玻璃纤维基板，硅基板，表面经过阳极氧化处理的铝复合基板或者表面具有类钻石薄膜的复合基板等。 
该散热鳍片500设置在该第二基板220上且位于远离该第一基板210的一侧，并沿远离该第一基板210的方向延伸。 
该热电致冷单元组230包括多个串联在一起的热电致冷单元232。在本实施例中，相邻两个热电致冷单元232通过一导电片234形成电连接。每个热电致冷单元232包括一导电基底2320，及设置在该导电基底2320一侧并与该导电基底2320电连接的P型半导体块2322与N型半导体块2324。在本实施例中，该导电基底2320设置在该第一基板210的靠近该第二基板220的一侧，并与该第一基板210直接接触；该P型半导体块2322与N型半导体块2324并列设置在该导电基底2320的与该第一基板210相对的一侧；该导电片234设置在该第二基板220的靠近该第一基板210的一侧并与该第二基板220直接接触，该导电片234的远离该第二基板220的一侧与一个热电致冷单元232的P型半导体块2322及相邻热电致冷单元232的N型半导体块2324电连接。该热电致冷单元组230的两端分别与一直流电源201相连。 
该P型半导体块2322与该N型半导体块2324分别为掺杂有Bi-Te系、Sb-Te系、Bi-Se系、Pb-Te系、Ag-Sb-Te系、Si-Ge 系、Fe-Si系、Mn-Si系或者Cr-Si系化合物半导体的固态块体(Solid-State Cube)。在本实施例中，该P型半导体块2322与该N型半导体块2324分别为P型Bi2Te3、N型Bi2Te3。 
该多个发光二极管芯片300外延生长在该第一基板210的远离该第二基板220的一侧上。该金属线路层400也设置在该第一基板210上且位于远离该第二基板220的一侧，该多个发光二极管芯片300分别通过金线600与该金属线路层400形成电连接。请参见图3，该多个发光二极管芯片300也可覆晶封装(Flip-chip)在该第一基板210的远离该第二基板220的一侧，即发光二极管芯片300包括并行设置的第一接触电极310与第二接触电极320，该第一接触电极310与该第二接触电极320通过焊料(图表示)分别与金属线路层400形成电连接。 
当直流电源201给热电致冷单元组230提供电能时，热电致冷单元组230所包括的多个热电致冷单元232均会产生帕贴尔效应效应(Peltier Effect)，该热电致冷单元组230的靠近第一基板210一端的热量可以通过P型半导体块2322及N型半导体块2324的传输作用被传送到靠近第二基板220一端。在此，该多个发光二极管芯片300发出的热量经由导热性佳的第一基板210传导至该多个热电致冷单元232，再通过P型半导体块2322与N型半导体块2324的传输作用将热量传送到该第二基板220，接着经由散热鳍片500快速传导出去。 
可以理解的是，所述多个热电致冷单元232也可以分别连接若干个直流电源或者并联到一个直流电源，同样可以实现帕贴尔效应从而对该多个发光二极管芯片300进行散热。 
该热电致冷器200的工作温度可由该直流电源201所施加电压进行设定，从而使该热电致冷器200对该多个发光二极管芯片300的散热效率进行主动控制，由此可使该多个发光二极管芯片300在一恒定的温度范围内工作，以保证该多个发光二极管芯片300具有稳定的光电特性，提升该光源模组20的工作效率。此外，该多个发光二极管芯片300外延生长在该第一基
板210上，使得其产生的热量经过较短的距离即可传入该热电致冷器200，提高了该热电致冷器200对多个发光二极管芯片300的散热效率。 
另外，本领域技术人员还可于本发明精神内做其它变化，例如发光二极管芯片以其它方式与金属线路层形成电连接，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。 

Claims (7)

1.一种具良好散热性能的光源模组，其包括：一个热电致冷器，多个发光二极管芯片及一个金属线路层；
该热电致冷器包括一第一导热绝缘基板，一与该第一导热绝缘基板相对设置的第二导热绝缘基板，以及设置在该第一导热绝缘基板与该第二导热绝缘基板之间的热电致冷单元组，该热电致冷单元组包括多个连接在一起的热电致冷单元；
该多个发光二极管芯片及该金属线路层设置在该第一导热绝缘基板上且位于远离该第二导热绝缘基板的一侧，该多个发光二极管芯片外延生长在该第一导热绝缘基板上且分别与该金属线路层形成电连接。
2.如权利要求1所述的光源模组，其特征在于：该多个发光二极管芯片覆晶封装在该第一导热绝缘基板上。
3.如权利要求1所述的光源模组，其特征在于：该多个发光二极管芯片分别与该金属线路层打线连接。
4.如权利要求1所述的光源模组，其特征在于：该光源模组还包括散热鳍片，其设置在该第二导热绝缘基板上且位于远离该第一导热绝缘基板的一侧。
5.如权利要求4所述的光源模组，其特征在于：该散热鳍片沿远离该第一导热绝缘基板的方向延伸。
6.如权利要求1所述的光源模组，其特征在于：该第一导热绝缘基板与该第二导热绝缘基板为陶瓷基板，玻璃纤维基板，硅基板，表面经过阳极氧化处理的铝复合基板或表面具有类钻石薄膜的复合基板。
7.如权利要求1所述的光源模组，其特征在于：每个热电致冷单元包括一导电基底，及设置在该导电基底一侧并与该导电基底电连接的P型半导体块与N型半导体块，相邻两个热电致冷单元通过一导电片形成电连接。
CN2007102035081A 2007-12-28 2007-12-28 具良好散热性能的光源模组 Expired - Fee Related CN101471337B (zh)

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US12/275,339 US20090167134A1 (en) 2007-12-28 2008-11-21 Light source module with high heat-dissipation efficiency
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