WO2014203897A1 - Composition électroconductrice et cellule solaire - Google Patents
Composition électroconductrice et cellule solaire Download PDFInfo
- Publication number
- WO2014203897A1 WO2014203897A1 PCT/JP2014/066041 JP2014066041W WO2014203897A1 WO 2014203897 A1 WO2014203897 A1 WO 2014203897A1 JP 2014066041 W JP2014066041 W JP 2014066041W WO 2014203897 A1 WO2014203897 A1 WO 2014203897A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silver salt
- conductive composition
- fatty acid
- acid silver
- electrode
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 44
- 229930195729 fatty acid Natural products 0.000 claims abstract description 44
- 239000000194 fatty acid Substances 0.000 claims abstract description 44
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 150000004665 fatty acids Chemical class 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000197 pyrolysis Methods 0.000 abstract description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 102
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 34
- 239000000758 substrate Substances 0.000 description 28
- -1 etc.) Substances 0.000 description 26
- 239000003822 epoxy resin Substances 0.000 description 25
- 229920000647 polyepoxide Polymers 0.000 description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- 239000010408 film Substances 0.000 description 17
- 239000000843 powder Substances 0.000 description 17
- 229910001923 silver oxide Inorganic materials 0.000 description 17
- 238000000967 suction filtration Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- 238000003756 stirring Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 229910015900 BF3 Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 description 3
- WDDATYYWXSGWKJ-UHFFFAOYSA-L C(CCCC(=O)[O-])(=O)[O-].[Ag+2] Chemical compound C(CCCC(=O)[O-])(=O)[O-].[Ag+2] WDDATYYWXSGWKJ-UHFFFAOYSA-L 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- TYGBVXXKMBLIJL-UHFFFAOYSA-L [Ag+2].C(CCCCCCCC(=O)[O-])(=O)[O-] Chemical compound [Ag+2].C(CCCCCCCC(=O)[O-])(=O)[O-] TYGBVXXKMBLIJL-UHFFFAOYSA-L 0.000 description 3
- SUFQRHZIMVUZOI-UHFFFAOYSA-J [Ag]OC(=O)CC(C(CC(=O)O[Ag])C(=O)O[Ag])C(=O)O[Ag] Chemical compound [Ag]OC(=O)CC(C(CC(=O)O[Ag])C(=O)O[Ag])C(=O)O[Ag] SUFQRHZIMVUZOI-UHFFFAOYSA-J 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- ZAMLDSWLRHVSSA-UHFFFAOYSA-M silver;2-ethylbutanoate Chemical compound [Ag+].CCC(CC)C([O-])=O ZAMLDSWLRHVSSA-UHFFFAOYSA-M 0.000 description 3
- WXENESFPQCWDHY-UHFFFAOYSA-M silver;2-ethylhexanoate Chemical compound [Ag+].CCCCC(CC)C([O-])=O WXENESFPQCWDHY-UHFFFAOYSA-M 0.000 description 3
- GYEMIEGAEOIJQR-UHFFFAOYSA-M silver;2-methylpropanoate Chemical compound [Ag+].CC(C)C([O-])=O GYEMIEGAEOIJQR-UHFFFAOYSA-M 0.000 description 3
- JKOCEVIXVMBKJA-UHFFFAOYSA-M silver;butanoate Chemical compound [Ag+].CCCC([O-])=O JKOCEVIXVMBKJA-UHFFFAOYSA-M 0.000 description 3
- MNMYRUHURLPFQW-UHFFFAOYSA-M silver;dodecanoate Chemical compound [Ag+].CCCCCCCCCCCC([O-])=O MNMYRUHURLPFQW-UHFFFAOYSA-M 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 2
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- MFWNICZNMCWBKV-UHFFFAOYSA-L C1(C(CC=CC1)C(=O)[O-])C(=O)[O-].[Ag+2] Chemical compound C1(C(CC=CC1)C(=O)[O-])C(=O)[O-].[Ag+2] MFWNICZNMCWBKV-UHFFFAOYSA-L 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical compound CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YWZDCTBAHKRVGL-UHFFFAOYSA-M silver;2,2-bis(hydroxymethyl)butanoate Chemical compound [Ag+].CCC(CO)(CO)C([O-])=O YWZDCTBAHKRVGL-UHFFFAOYSA-M 0.000 description 2
- SUBDVAVHQMAIST-UHFFFAOYSA-M silver;2-hydroxy-2-methylpropanoate Chemical compound [Ag+].CC(C)(O)C([O-])=O SUBDVAVHQMAIST-UHFFFAOYSA-M 0.000 description 2
- RUJQWQMCBPWFDO-UHFFFAOYSA-M silver;2-hydroxyacetate Chemical compound [Ag+].OCC([O-])=O RUJQWQMCBPWFDO-UHFFFAOYSA-M 0.000 description 2
- BMJSGGTXQGXURU-UHFFFAOYSA-M silver;3-hydroxy-2,2-dimethylpropanoate Chemical compound [Ag+].OCC(C)(C)C([O-])=O BMJSGGTXQGXURU-UHFFFAOYSA-M 0.000 description 2
- ORYURPRSXLUCSS-UHFFFAOYSA-M silver;octadecanoate Chemical compound [Ag+].CCCCCCCCCCCCCCCCCC([O-])=O ORYURPRSXLUCSS-UHFFFAOYSA-M 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- FQUYSHZXSKYCSY-UHFFFAOYSA-N 1,4-diazepane Chemical compound C1CNCCNC1 FQUYSHZXSKYCSY-UHFFFAOYSA-N 0.000 description 1
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical compound N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- PWZDJIUQHUGFRJ-UHFFFAOYSA-N 1-(2-chlorophenyl)piperazine Chemical compound ClC1=CC=CC=C1N1CCNCC1 PWZDJIUQHUGFRJ-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- WGCYRFWNGRMRJA-UHFFFAOYSA-N 1-ethylpiperazine Chemical compound CCN1CCNCC1 WGCYRFWNGRMRJA-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- FXHRAKUEZPSMLJ-UHFFFAOYSA-N 1-methyl-1,4-diazepane Chemical compound CN1CCCNCC1 FXHRAKUEZPSMLJ-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- PKDPUENCROCRCH-UHFFFAOYSA-N 1-piperazin-1-ylethanone Chemical compound CC(=O)N1CCNCC1 PKDPUENCROCRCH-UHFFFAOYSA-N 0.000 description 1
- QLEIDMAURCRVCX-UHFFFAOYSA-N 1-propylpiperazine Chemical compound CCCN1CCNCC1 QLEIDMAURCRVCX-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- JVYDLYGCSIHCMR-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butanoic acid Chemical compound CCC(CO)(CO)C(O)=O JVYDLYGCSIHCMR-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- QOZOFODNIBQPGN-UHFFFAOYSA-N 2,4-dimethylpiperidine Chemical compound CC1CCNC(C)C1 QOZOFODNIBQPGN-UHFFFAOYSA-N 0.000 description 1
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 description 1
- NNWUEBIEOFQMSS-UHFFFAOYSA-N 2-Methylpiperidine Chemical compound CC1CCCCN1 NNWUEBIEOFQMSS-UHFFFAOYSA-N 0.000 description 1
- DRQFBCMQBWNTNV-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;trifluoroborane Chemical compound FB(F)F.OCCN(CCO)CCO DRQFBCMQBWNTNV-UHFFFAOYSA-N 0.000 description 1
- LTHNHFOGQMKPOV-UHFFFAOYSA-N 2-ethylhexan-1-amine Chemical compound CCCCC(CC)CN LTHNHFOGQMKPOV-UHFFFAOYSA-N 0.000 description 1
- RLHGFJMGWQXPBW-UHFFFAOYSA-N 2-hydroxy-3-(1h-imidazol-5-ylmethyl)benzamide Chemical compound NC(=O)C1=CC=CC(CC=2NC=NC=2)=C1O RLHGFJMGWQXPBW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- CJNRGSHEMCMUOE-UHFFFAOYSA-N 2-piperidin-1-ylethanamine Chemical compound NCCN1CCCCC1 CJNRGSHEMCMUOE-UHFFFAOYSA-N 0.000 description 1
- IDWRJRPUIXRFRX-UHFFFAOYSA-N 3,5-dimethylpiperidine Chemical compound CC1CNCC(C)C1 IDWRJRPUIXRFRX-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- RDFQSFOGKVZWKF-UHFFFAOYSA-N 3-hydroxy-2,2-dimethylpropanoic acid Chemical compound OCC(C)(C)C(O)=O RDFQSFOGKVZWKF-UHFFFAOYSA-N 0.000 description 1
- JEGMWWXJUXDNJN-UHFFFAOYSA-N 3-methylpiperidine Chemical compound CC1CCCNC1 JEGMWWXJUXDNJN-UHFFFAOYSA-N 0.000 description 1
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 description 1
- UVLSCMIEPPWCHZ-UHFFFAOYSA-N 3-piperazin-1-ylpropan-1-amine Chemical compound NCCCN1CCNCC1 UVLSCMIEPPWCHZ-UHFFFAOYSA-N 0.000 description 1
- JMUCXULQKPWSTJ-UHFFFAOYSA-N 3-piperidin-1-ylpropan-1-amine Chemical compound NCCCN1CCCCC1 JMUCXULQKPWSTJ-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- FAUAZXVRLVIARB-UHFFFAOYSA-N 4-[[4-[bis(oxiran-2-ylmethyl)amino]phenyl]methyl]-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC(CC=2C=CC(=CC=2)N(CC2OC2)CC2OC2)=CC=1)CC1CO1 FAUAZXVRLVIARB-UHFFFAOYSA-N 0.000 description 1
- CXXSQMDHHYTRKY-UHFFFAOYSA-N 4-amino-2,3,5-tris(oxiran-2-ylmethyl)phenol Chemical compound C1=C(O)C(CC2OC2)=C(CC2OC2)C(N)=C1CC1CO1 CXXSQMDHHYTRKY-UHFFFAOYSA-N 0.000 description 1
- MILSUEPGERPPSU-UHFFFAOYSA-N 4-chloro-N-propylbutan-1-amine Chemical compound ClCCCCNCCC MILSUEPGERPPSU-UHFFFAOYSA-N 0.000 description 1
- UZOFELREXGAFOI-UHFFFAOYSA-N 4-methylpiperidine Chemical compound CC1CCNCC1 UZOFELREXGAFOI-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- WFYKJEUICUVSPI-UHFFFAOYSA-N C(C1CO1)C1(C(N)(CC2CO2)CC2CO2)CO1 Chemical compound C(C1CO1)C1(C(N)(CC2CO2)CC2CO2)CO1 WFYKJEUICUVSPI-UHFFFAOYSA-N 0.000 description 1
- CJTZQBIPIUNUSF-UHFFFAOYSA-L C(CC(=O)[O-])(=O)[O-].[Ag+2] Chemical compound C(CC(=O)[O-])(=O)[O-].[Ag+2] CJTZQBIPIUNUSF-UHFFFAOYSA-L 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- BSNFHTQNYVCKGM-UHFFFAOYSA-N OC([Ag])=O Chemical compound OC([Ag])=O BSNFHTQNYVCKGM-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- DPOPAJRDYZGTIR-UHFFFAOYSA-N Tetrazine Chemical compound C1=CN=NN=N1 DPOPAJRDYZGTIR-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 125000005998 bromoethyl group Chemical group 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- HEQWUWZWGPCGCD-UHFFFAOYSA-N cadmium(2+) oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Cd++].[Sn+4] HEQWUWZWGPCGCD-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920005556 chlorobutyl Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- ILUAAIDVFMVTAU-UHFFFAOYSA-N cyclohex-4-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CC=CCC1C(O)=O ILUAAIDVFMVTAU-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- LGQRIMRZKJJQTC-UHFFFAOYSA-L disilver;propanedioate Chemical compound [Ag+].[Ag+].[O-]C(=O)CC([O-])=O LGQRIMRZKJJQTC-UHFFFAOYSA-L 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- XGDBOJRURXXJBF-UHFFFAOYSA-M fluoroindium Chemical compound [In]F XGDBOJRURXXJBF-UHFFFAOYSA-M 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 239000004845 glycidylamine epoxy resin Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- RWIVICVCHVMHMU-UHFFFAOYSA-N n-aminoethylmorpholine Chemical compound NCCN1CCOCC1 RWIVICVCHVMHMU-UHFFFAOYSA-N 0.000 description 1
- XCVNDBIXFPGMIW-UHFFFAOYSA-N n-ethylpropan-1-amine Chemical compound CCCNCC XCVNDBIXFPGMIW-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical class 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- DBIWHDFLQHGOCS-UHFFFAOYSA-N piperidine;trifluoroborane Chemical compound FB(F)F.C1CCNCC1 DBIWHDFLQHGOCS-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- RQZVTOHLJOBKCW-UHFFFAOYSA-M silver;7,7-dimethyloctanoate Chemical compound [Ag+].CC(C)(C)CCCCCC([O-])=O RQZVTOHLJOBKCW-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/085—Copper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a conductive composition and a solar battery cell using the same as a collecting electrode.
- conductive particles such as silver particles, binders made of thermoplastic resin (eg, acrylic resin, vinyl acetate resin, etc.) or thermosetting resin (eg, epoxy resin, unsaturated polyester resin, etc.), organic solvent, curing
- thermoplastic resin eg, acrylic resin, vinyl acetate resin, etc.
- thermosetting resin eg, epoxy resin, unsaturated polyester resin, etc.
- organic solvent curing
- a substrate for example, a silicon substrate, an epoxy resin substrate, etc.
- Patent Document 2 “a conductive composition containing silver powder (A), a fatty acid silver salt (B), a resin (C), and a solvent (D),
- the fatty acid silver salt (B) is a compound having one carboxy silver base (—COOAg) and one or two hydroxyl groups (—OH), and the content of silver oxide is the solvent (D)
- a conductive composition that is 10 parts by mass or less with respect to 100 parts by mass has been proposed ([Claim 1]).
- the copper fine particles are employed as the metal fine particles in the metal fine particle ink paste described in Patent Document 1, or when the silver powder of the conductive composition described in Patent Document 2 is changed to copper powder, the copper particles It has been clarified that the volume resistivity of formed electrodes and wirings (hereinafter also referred to as “electrodes”) may be increased depending on the usage environment due to oxidation of at least a part of the surface of the electrode. .
- an object of the present invention is to provide a conductive composition capable of forming an electrode or the like having a low volume resistivity and a solar battery cell using the same as a collecting electrode.
- the present inventors have found that in a conductive composition containing copper powder, a fatty acid silver salt and a thermosetting resin, there is a difference between the thermal decomposition peak temperature and the thermal decomposition start temperature.
- a specific amount of fatty acid silver salt at 40 ° C. or higher, it was found that the volume resistivity of the formed electrode or the like was lowered, and the present invention was completed. That is, the present inventors have found that the above problem can be solved by the following configuration.
- a conductive composition comprising copper powder (A), a fatty acid silver salt (B), and a thermosetting resin (C),
- the difference between the thermal decomposition peak temperature of the fatty acid silver salt (B) and the thermal decomposition start temperature is 40 ° C. or higher
- the content of the fatty acid silver salt (B) is 20 to 100 parts by mass with respect to 100 parts by mass of the copper powder (A) in terms of the amount of silver produced from the fatty acid silver salt (B).
- Conductive composition (2) The conductive composition according to (1), wherein the content of the thermosetting resin (C) is 1 to 50 parts by mass with respect to 100 parts by mass of the copper powder (A).
- a solar battery cell using the conductive composition according to (1) or (2) above as a collecting electrode is a collecting electrode.
- the present invention it is possible to provide a conductive composition capable of forming an electrode or the like having a low volume resistivity, and a solar battery cell using the same as a collecting electrode. Further, by using the conductive composition of the present invention, an electrode having a low volume resistivity can be formed even when firing at a low temperature to a medium temperature (less than 450 ° C.), particularly at a low temperature (about 150 to 350 ° C.). Therefore, the solar cell (especially the second preferred embodiment described later) has an effect of reducing damage caused by heat, which is very useful. Furthermore, if the conductive composition of the present invention is used, an electronic circuit, an antenna, etc. not only on a material having high heat resistance such as indium tin oxide (ITO) or silicon but also on a material having low heat resistance such as PET film. This circuit is very useful because it can be manufactured easily and in a short time.
- ITO indium tin oxide
- PET film a material having low heat resistance
- FIG. 1 is a cross-sectional view showing a first preferred embodiment of a solar battery cell.
- FIG. 2 is a cross-sectional view showing a second preferred embodiment of the solar battery cell.
- the conductive composition of the present invention is a conductive composition having copper powder (A), a fatty acid silver salt (B), and a thermosetting resin (C).
- the electrically conductive composition of this invention may contain a hardening
- the electrically conductive composition of this invention may contain the solvent (E) as needed from viewpoints of printability etc. so that it may mention later.
- an electrode having a low volume resistivity can be formed.
- Composition This is not clear in detail, but is estimated to be as follows. That is, by using the fatty acid silver salt (B) having a difference between the thermal decomposition peak temperature and the thermal decomposition starting temperature of 40 ° C. or more, silver is produced from the fatty acid silver salt in a wide temperature range, and the silver is the surface of the copper particles. It is considered that the surface oxidation of the copper particles could be suppressed by efficiently covering the surface.
- the copper powder (A) used in the conductive composition of the present invention is not particularly limited, and those blended with conventionally known conductive pastes can be used.
- the copper powder (A) preferably has an average particle diameter of 1.0 to 20 ⁇ m because it has good printability and can form an electrode having a smaller volume resistivity. It is more preferably 0 to 10 ⁇ m.
- the average particle diameter means an average value of the particle diameters, and is measured by using a laser diffraction / scattering type particle size distribution measuring apparatus, and the 50% volume cumulative diameter (D50) calculated using the particle diameter standard as the number is used.
- D50 volume cumulative diameter
- a commercially available product can be used as such copper powder (A).
- Specific examples thereof include Cu-HWQ (average particle size: 3.0 ⁇ m, manufactured by Fukuda Metal Foil Powder Co., Ltd.), FCC. -TBX (average particle size: 5.05 ⁇ m, manufactured by Fukuda Metal Foil Powder Co., Ltd.)
- the fatty acid silver salt (B) used in the conductive composition of the present invention is a fatty acid silver salt in which the difference between the thermal decomposition peak temperature and the thermal decomposition start temperature is 40 ° C. or higher.
- the pyrolysis peak temperature is a value measured in the temperature range from room temperature to 300 ° C. in the air at a temperature rising rate of 5 ° C./min using a differential thermal-thermogravimetric simultaneous measurement device (TG-DTA). The exothermic peak temperature appearing in the DTA curve.
- the pyrolysis start temperature is measured in the temperature range from room temperature to 300 ° C.
- the fatty acid silver salt (B) has a difference between the thermal decomposition peak temperature and the thermal decomposition starting temperature of 100 ° C. or more because it can form an electrode having a low volume resistivity after the wet heat test.
- the temperature is preferably 100 to 130 ° C. This is presumably because the surface of the copper powder (A) could be more efficiently coated with silver derived from the reduction of the fatty acid silver salt (B).
- the fatty acid silver salt (B) is not particularly limited as long as the difference between the thermal decomposition peak temperature and the thermal decomposition start temperature is 40 ° C. or higher among the silver salts of organic carboxylic acids.
- JP-A-2008-198595 Fatty acid metal salts (particularly tertiary fatty acid silver salts) described in paragraphs [0063] to [0068] of the gazette fatty acid silver described in paragraph [0030] of Japanese Patent No. 4482930, JP 2010-92684 A Secondary fatty acid silver salts described in the paragraphs [0046] to [0056] of the above can be used.
- the content of the fatty acid silver salt (B) is 20 to 100 with respect to 100 parts by mass of the copper powder (A) in terms of the amount of silver produced from the fatty acid silver salt (B). Parts by mass, preferably 30 to 100 parts by mass, and more preferably 40 to 100 parts by mass.
- thermosetting resin (C) used in the conductive composition of the present invention is not particularly limited, and specific examples thereof include an epoxy resin, a polyester resin, a silicone resin, a urethane resin, and the like. You may use, and may use 2 or more types together. Among these, an epoxy resin is preferable because it has a strong adhesion to a silicon substrate and high heat and humidity resistance.
- the epoxy resin as a suitable example of the thermosetting resin (C) is not particularly limited as long as it is a resin composed of a compound having two or more oxirane rings (epoxy groups) in one molecule.
- the equivalent is 90-2000.
- a conventionally well-known epoxy resin can be used as such an epoxy resin.
- epoxy compounds having a bisphenyl group such as bisphenol A type, bisphenol F type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol S type, bisphenol AF type, biphenyl type, and polyalkylene Bifunctional glycidyl ether type epoxy resins such as glycol type, alkylene glycol type epoxy compounds, epoxy compounds having a naphthalene ring, and epoxy compounds having a fluorene group; Polyfunctional glycidyl ether type epoxy resins such as phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type; Glycidyl ester epoxy resins of synthetic fatty acids such as dimer acid; N, N, N ′, N′-tetraglycidyldiaminodiphenylmethane (TGDDM), tetraglycidyldiaminodiphenylsulfone (TGDDM), te
- epoxy resins may be used alone or in combination of two or more.
- bisphenol A type epoxy resins and bisphenol F type epoxy resins are preferable from the viewpoints of curability, heat resistance, durability, and cost.
- the content of the thermosetting resin (C) is 1.0 to 100 parts by mass with respect to 100 parts by mass of the copper powder (A) because the volume resistivity of the formed electrode or the like is lower.
- the amount is preferably 50 parts by mass, more preferably 2 to 25 parts by mass.
- the conductive composition of the present invention preferably contains a curing agent (D) composed of a complex of boron trifluoride and an amine compound.
- a complex of boron trifluoride and an amine compound a complex of boron trifluoride and an aliphatic amine (aliphatic primary amine, aliphatic secondary amine, aliphatic tertiary amine), trifluoride
- examples thereof include a complex of boron and an alicyclic amine, a complex of boron trifluoride and an aromatic amine, a complex of boron trifluoride and a heterocyclic amine, and the like.
- the heterocyclic amine may be an alicyclic heterocyclic amine (hereinafter also referred to as an alicyclic heterocyclic amine) or an aromatic heterocyclic amine (hereinafter also referred to as an aromatic heterocyclic amine). Also good.
- Specific examples of the aliphatic primary amine include methylamine, ethylamine, n-propylamine, iso-propylamine, n-butylamine, iso-butylamine, sec-butylamine, n-hexylamine, n-octylamine, 2 -Ethylhexylamine, laurylamine and the like.
- aliphatic secondary amine examples include dimethylamine, diethylamine, methylethylamine, methylpropylamine, di-iso-propylamine, di-n-propylamine, ethylpropylamine, di-n-butylamine, di- Examples include iso-butylamine, dipropenylamine, chlorobutylpropylamine, di (chlorobutyl) amine, di (bromoethyl) amine and the like.
- Specific examples of the aliphatic tertiary amine include trimethylamine, triethylamine, tributylamine, triethanolamine and the like.
- alicyclic amine examples include cyclohexylamine.
- aromatic amines include benzylamine.
- alicyclic heterocyclic amine examples include pyrrolidine, piperidine, 2-pipecoline, 3-pipecoline, 4-pipecoline, 2,4-lupetidine, 2,6-lupetidine, 3,5-lupetidine, piperazine, and homopiperazine.
- aromatic heterocyclic amine examples include pyridine, pyrrole, imidazole, pyridazine, pyrimidine, quinoline, triazine, tetrazine, isoquinoline, quinazoline, naphthyridine, pteridine, acridine, phenazine and the like.
- the curing agent (D) is selected from the group consisting of boron trifluoride piperidine, boron trifluoride ethylamine, and boron trifluoride triethanolamine because the volume resistivity of the formed electrode or the like is lower. A complex is preferred.
- the content of the curing agent (D) is preferably 1 to 15 parts by mass with respect to 100 parts by mass of the epoxy resin, because the volume resistivity of the formed electrode or the like becomes lower. It is more preferable that it is 10 mass parts.
- the conductive composition of the present invention preferably contains a solvent (E) from the viewpoint of workability such as printability.
- the solvent (E) is not particularly limited as long as it can apply the conductive composition of the present invention onto a substrate. Specific examples thereof include butyl carbitol, methyl ethyl ketone, isophorone, ⁇ -terpineol. These may be used, and these may be used alone or in combination of two or more.
- the electrically conductive composition of this invention may contain additives, such as a reducing agent, as needed.
- a reducing agent include ethylene glycols.
- the manufacturing method of the electrically conductive composition of this invention is not specifically limited,
- (D) the method of mixing the said solvent (E), an additive, etc. with a roll, a kneader, an extruder, a universal stirrer etc. is mentioned.
- the solar battery cell of the present invention is a solar battery cell using the above-described conductive composition of the present invention as a collecting electrode.
- a 1st suitable aspect of the photovoltaic cell of this invention comprises the surface electrode by the side of a light-receiving surface, a semiconductor substrate, and a back electrode,
- the said surface electrode and / or the said back electrode are the electroconductivity of this invention mentioned above.
- a solar battery cell formed using the composition can be mentioned.
- the 1st suitable aspect of the photovoltaic cell of this invention is demonstrated using FIG.
- the solar cell 1 includes a surface electrode 4 on the light receiving surface side, a pn junction silicon substrate 7 in which a p layer 5 and an n layer 2 are joined, and a back electrode 6.
- the solar battery cell 1 is preferably provided with an antireflection film 3, for example, by etching the wafer surface to form a pyramidal texture in order to reduce reflectivity.
- an antireflection film 3 for example, by etching the wafer surface to form a pyramidal texture in order to reduce reflectivity.
- the arrangement (pitch), shape, height, width and the like of the electrode are not particularly limited.
- the height of the electrode is usually designed to be several to several tens of ⁇ m, but the ratio of the height and width of the cross section of the electrode formed using the conductive composition of the present invention (height / width) (below) , “Aspect ratio”) can be adjusted to a large value (for example, about 0.4 or more).
- the front surface electrode and the back surface electrode usually have a plurality, but, for example, only a part of the plurality of surface electrodes is formed of the conductive composition of the present invention.
- part of the plurality of front surface electrodes and part of the plurality of back surface electrodes may be formed of the conductive composition of the present invention.
- the antireflection film is a film (film thickness: about 0.05 to 0.1 ⁇ m) formed on a portion of the light receiving surface where the surface electrode is not formed.
- a silicon oxide film, a silicon nitride film, a titanium oxide It is comprised from a film
- the silicon substrate has a pn junction, which means that a second conductivity type light-receiving surface impurity diffusion region is formed on the surface side of the first conductivity type semiconductor substrate.
- the second conductivity type is p-type.
- the impurity imparting p-type include boron and aluminum
- examples of the impurity imparting n-type include phosphorus and arsenic.
- the silicon substrate is not particularly limited, and a known silicon substrate (plate thickness: about 80 to 450 ⁇ m) for forming a solar cell can be used, and either a monocrystalline or polycrystalline silicon substrate can be used. Good.
- the solar battery cell has a large electrode aspect ratio because the surface electrode and / or the back electrode is formed using the conductive composition of the present invention.
- the electromotive force generated by light reception can be efficiently taken out as a current.
- the conductive composition of the present invention described above can also be applied to the formation of the back electrode of an all-back electrode type (so-called back contact type) solar cell, it can also be applied to an all-back electrode type solar cell. Can do.
- the manufacturing method of a photovoltaic cell (1st suitable aspect) is not specifically limited,
- the antireflection film can be formed by a known method such as a plasma CVD method.
- the wiring formation step is a step of forming a wiring by applying the conductive composition of the present invention on a silicon substrate.
- specific examples of the coating method include inkjet, screen printing, gravure printing, offset printing, letterpress printing, and the like.
- the heat treatment step is a step of forming a conductive wiring (electrode) by heat-treating the coating film formed in the wiring forming step.
- a conductive wiring electrode
- the heat treatment step is a step of forming a conductive wiring (electrode) by heat-treating the coating film formed in the wiring forming step.
- the heat treatment is not particularly limited, but is preferably a treatment in which heating (firing) is performed at a relatively low temperature of 150 to 350 ° C. for several seconds to several tens of minutes. When the temperature and time are within this range, an electrode can be easily formed even when an antireflection film is formed on a silicon substrate. Further, in the first preferred embodiment of the solar battery cell of the present invention, since the conductive composition of the present invention is used, good heat treatment (firing) can be achieved even at a relatively low temperature of 150 to 350 ° C. ) Can be applied.
- the heat treatment step may be performed by irradiation with ultraviolet rays or infrared rays.
- the solar battery cell 100 has an n-type single crystal silicon substrate 11 as a center, i-type amorphous silicon layers 12 a and 12 b, and p-type amorphous silicon layers 13 a and n-type amorphous silicon layers above and below it. 13b, transparent conductive layers 14a and 14b, and current collecting electrodes 15a and 15b formed using the above-described conductive composition of the present invention.
- the n-type single crystal silicon substrate is a single crystal silicon layer doped with an n-type impurity. Impurities that give n-type are as described above.
- the i-type amorphous silicon layer is an undoped amorphous silicon layer.
- the p-type amorphous silicon is an amorphous silicon layer doped with an impurity imparting p-type. Impurities that give p-type are as described above.
- the n-type amorphous silicon is an amorphous silicon layer doped with an n-type impurity. Impurities that give n-type are as described above.
- the said collector electrode is a collector electrode formed using the electrically conductive composition of this invention mentioned above. A specific aspect of the current collecting electrode is the same as that of the front surface electrode or the back surface electrode described above.
- Transparent conductive layer Specific examples of the material for the transparent conductive layer include single metal oxides such as zinc oxide, tin oxide, indium oxide, and titanium oxide, indium tin oxide (ITO), indium zinc oxide, indium titanium oxide, tin cadmium oxide, Various metal oxides such as gallium-doped zinc oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, titanium-doped zinc oxide, titanium-doped indium oxide, zirconium-doped indium oxide, and fluorine-doped tin oxide. Can be mentioned.
- ITO indium tin oxide
- ITO indium zinc oxide
- titanium oxide titanium oxide
- tin cadmium oxide Various metal oxides such as gallium-doped zinc oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, titanium-doped zinc oxide, titanium-doped indium oxide, zirconium-doped indium oxide, and fluorine-doped
- the method for producing the solar battery cell is not particularly limited, and can be produced by, for example, the method described in JP 2010-34162 A.
- the i-type amorphous silicon layer 12a is formed on one main surface of the n-type single crystal silicon substrate 11 by a PECVD (plasma enhanced chemical vapor deposition) method or the like.
- a p-type amorphous silicon layer 13a is formed on the formed i-type amorphous silicon layer 12a by PECVD or the like.
- an i-type amorphous silicon layer 12b is formed on the other main surface of the n-type single crystal silicon substrate 11 by PECVD or the like. Further, an n-type amorphous silicon layer 13b is formed on the formed i-type amorphous silicon layer 12b by PECVD or the like.
- transparent conductive layers 14a and 14b such as ITO are formed on the p-type amorphous silicon layer 13a and the n-type amorphous silicon layer 13b by sputtering or the like.
- the conductive composition of the present invention is applied on the formed transparent conductive layers 14a and 14b to form wirings, and the formed wirings are heat-treated to form current collecting electrodes 15a and 15b.
- the method for forming the wiring is the same as the method described in the wiring formation step of the above-described solar battery cell (first preferred embodiment).
- the method of heat-treating the wiring is the same as the method described in the heat treatment step of the above-described solar battery cell (first preferred embodiment), but the heat treatment temperature (firing temperature) is preferably 150 to 200 ° C.
- Examples 1 to 17, Comparative Examples 1 to 6 The copper powder etc. which are shown in the following 2nd table
- ⁇ Adhesion> The evaluation of the adhesion of each formed conductive film to the substrate was performed by a grid peel test. The results are shown in Table 2 below. Specifically, on each of the obtained substrates with conductive coating, 100 1 mm bases (10 ⁇ 10) were made, and cellophane adhesive tape was completely attached on the bases and rubbed 10 times with the belly of the finger. After that, one end of the tape was momentarily pulled apart while keeping one end of the tape at right angles to the conductive film, and the number of base meshes remaining without being completely peeled was examined. It is most preferable that the number of base meshes remaining without being completely peeled is 100, that is, those having not peeled off at all.
- Copper powder Cu-HWQ (shape: spherical, average particle size: 3.0 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry)
- Silver salt of 2-methylpropanoate 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 38 g of 2-methylpropanoic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of methyl ethyl ketone (MEK) were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver 2-methylpropanoate.
- MEK methyl ethyl ketone
- 2-ethylbutyric acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 50.13 g of 2-ethylbutyric acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver 2-ethylbutyrate.
- Neodecanoic acid silver salt 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 74.3 g of neodecanoic acid (manufactured by Toyo Gosei Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Next, MEK was removed by suction filtration, and the obtained powder was dried to prepare a silver neodecanoate.
- 2-ethylhexanoic acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 49.27 g of 2-ethylhexanoic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver 2-ethylhexanoate.
- -Silver stearate 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 123 g of stearic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare a silver stearate salt.
- 1,2,3,4-Butanetetracarboxylic acid silver salt First, 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 25.29 g of 1,2,3,4-butanetetracarboxylic acid (manufactured by Shin Nippon Chemical Co., Ltd.) and 300 g of MEK are put into a ball mill and stirred at room temperature for 24 hours. Was reacted. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare 1,2,3,4-butanetetracarboxylic acid silver salt.
- Glutaric acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 28.5 g of glutaric acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver glutarate.
- N-butyric acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 38.01 g of n-butyric acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Next, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver n-butyrate.
- Silver laurate salt 40 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 68 g of lauric acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver laurate.
- 4-cyclohexene-1,2-dicarboxylic acid silver salt 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 36.67 g of 4-cyclohexene-1,2-dicarboxylic acid (manufactured by Shin Nippon Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. . Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver 4-cyclohexene-1,2-dicarboxylate.
- Azelaic acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 40.60 g of azelaic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were put into a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare azelaic acid silver salt.
- 2,2-bis (hydroxymethyl) -n-butyric acid silver salt 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 64 g of 2,2-bis (hydroxymethyl) -n-butyric acid (manufactured by Tokyo Chemical Industry Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. . Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare 2,2-bis (hydroxymethyl) -n-butyric acid silver salt.
- 2-hydroxyisobutyric acid silver salt 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 45 g of 2-hydroxyisobutyric acid (manufactured by Tokyo Chemical Industry Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver 2-hydroxyisobutyrate.
- Silver glycolate 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 16.40 g of glycolic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Next, MEK was removed by suction filtration, and the resulting powder was dried to prepare silver glycolate.
- Hydroxypivalic acid silver salt 50 g of silver oxide (manufactured by Toyo Chemical Co., Ltd.), 25.48 g of hydroxypivalic acid (manufactured by Kanto Chemical Co., Ltd.) and 300 g of MEK were placed in a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the resulting powder was dried to prepare a hydroxypivalic acid silver salt.
- Malonic acid silver salt 50 g of silver oxide (manufactured by Toyo Kagaku Kogyo Co., Ltd.), 11 g of malonic acid and 300 g of MEK were put into a ball mill and reacted by stirring at room temperature for 24 hours. Subsequently, MEK was removed by suction filtration, and the obtained powder was dried to prepare silver malonate.
- Thermosetting resin bisphenol A type epoxy resin (EP-4100E, manufactured by ADEKA)
- Thermosetting resin bisphenol F type epoxy resin (EP-4901E, manufactured by ADEKA)
- -Thermosetting resin Urethane-modified epoxy resin (EPU-1395, manufactured by ADEKA)
- Curing agent Boron trifluoride ethylamine (manufactured by Stella Chemifa)
- Solvent Terpinel
- the comparison between Examples 1 to 13 reveals that the volume resistivity after the wet heat resistance test can be further reduced when the difference between the thermal decomposition peak temperature and the thermal decomposition start temperature is 100 ° C. or more. Further, from the comparison with Examples 8, 14 and 15, when the content of the thermosetting resin (C) is 1.0 to 50 parts by mass with respect to 100 parts by mass of the copper powder (A), the formed electrode It has been found that the volume resistivity of etc. becomes lower.
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167000003A KR20160021178A (ko) | 2013-06-19 | 2014-06-17 | 도전성 조성물 및 태양 전지 셀 |
JP2015522935A JPWO2014203897A1 (ja) | 2013-06-19 | 2014-06-17 | 導電性組成物および太陽電池セル |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-128582 | 2013-06-19 | ||
JP2013128582 | 2013-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014203897A1 true WO2014203897A1 (fr) | 2014-12-24 |
Family
ID=52104629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/066041 WO2014203897A1 (fr) | 2013-06-19 | 2014-06-17 | Composition électroconductrice et cellule solaire |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2014203897A1 (fr) |
KR (1) | KR20160021178A (fr) |
TW (1) | TW201516093A (fr) |
WO (1) | WO2014203897A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6357599B1 (ja) * | 2017-02-24 | 2018-07-11 | Dowaエレクトロニクス株式会社 | 導電性ペースト |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6709943B2 (ja) * | 2017-12-13 | 2020-06-17 | ナミックス株式会社 | 導電性ペースト |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10312712A (ja) * | 1997-05-14 | 1998-11-24 | Asahi Chem Ind Co Ltd | はんだ付け可能な導電性ペースト |
JP2012022798A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012023096A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012022795A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012023095A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012022804A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012038846A (ja) * | 2010-08-05 | 2012-02-23 | Yokohama Rubber Co Ltd:The | 太陽電池電極用ペーストおよび太陽電池セル |
WO2012042780A1 (fr) * | 2010-09-29 | 2012-04-05 | 横浜ゴム株式会社 | Composition électroconductrice, cellule de batterie solaire et procédé pour la production de cellule de batterie solaire |
JP2012151276A (ja) * | 2011-01-19 | 2012-08-09 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2012178456A (ja) * | 2011-02-25 | 2012-09-13 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2013045742A (ja) * | 2011-08-26 | 2013-03-04 | Yokohama Rubber Co Ltd:The | 導電性組成物、太陽電池セルおよび太陽電池モジュール |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008198595A (ja) | 2007-01-16 | 2008-08-28 | Mitsubishi Chemicals Corp | 金属微粒子インクペースト及び有機酸処理金属微粒子 |
-
2014
- 2014-06-17 JP JP2015522935A patent/JPWO2014203897A1/ja active Pending
- 2014-06-17 KR KR1020167000003A patent/KR20160021178A/ko not_active Application Discontinuation
- 2014-06-17 WO PCT/JP2014/066041 patent/WO2014203897A1/fr active Application Filing
- 2014-06-19 TW TW103121247A patent/TW201516093A/zh unknown
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10312712A (ja) * | 1997-05-14 | 1998-11-24 | Asahi Chem Ind Co Ltd | はんだ付け可能な導電性ペースト |
JP2012022798A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012023096A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012022795A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012023095A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012022804A (ja) * | 2010-07-12 | 2012-02-02 | Yokohama Rubber Co Ltd:The | 導電性組成物および太陽電池セル |
JP2012038846A (ja) * | 2010-08-05 | 2012-02-23 | Yokohama Rubber Co Ltd:The | 太陽電池電極用ペーストおよび太陽電池セル |
WO2012042780A1 (fr) * | 2010-09-29 | 2012-04-05 | 横浜ゴム株式会社 | Composition électroconductrice, cellule de batterie solaire et procédé pour la production de cellule de batterie solaire |
JP2012151276A (ja) * | 2011-01-19 | 2012-08-09 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2012178456A (ja) * | 2011-02-25 | 2012-09-13 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2013045742A (ja) * | 2011-08-26 | 2013-03-04 | Yokohama Rubber Co Ltd:The | 導電性組成物、太陽電池セルおよび太陽電池モジュール |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6357599B1 (ja) * | 2017-02-24 | 2018-07-11 | Dowaエレクトロニクス株式会社 | 導電性ペースト |
WO2018155393A1 (fr) * | 2017-02-24 | 2018-08-30 | Dowaエレクトロニクス株式会社 | Pâte électroconductrice |
Also Published As
Publication number | Publication date |
---|---|
TW201516093A (zh) | 2015-05-01 |
KR20160021178A (ko) | 2016-02-24 |
JPWO2014203897A1 (ja) | 2017-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5304932B1 (ja) | 導電性組成物および太陽電池セル | |
CN111480206B (zh) | 导电性糊剂 | |
JP2007224191A (ja) | 導電性ペースト組成物及びそのペースト組成物を用いた太陽電池セル、並びにそのセルを用いた太陽電池モジュール | |
JP5045803B2 (ja) | 導電性組成物および太陽電池セル | |
WO2014069296A1 (fr) | Composition conductrice et cellule solaire | |
JP2009146584A (ja) | 導電性ペースト組成物 | |
TW201833940A (zh) | 導電性組成物 | |
JP5527901B2 (ja) | 太陽電池集電電極形成用導電性組成物および太陽電池セル | |
WO2014203897A1 (fr) | Composition électroconductrice et cellule solaire | |
WO2014080789A1 (fr) | Composition conductrice pour allumage basse température et cellule solaire | |
JP2016030794A (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP2016160415A (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP6579108B2 (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP2012023095A (ja) | 導電性組成物および太陽電池セル | |
WO2015118760A1 (fr) | Composition électroconductrice, cellule solaire, et module de cellule solaire | |
JP2016032022A (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP5844091B2 (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP2016160413A (ja) | 導電性組成物、太陽電池セルおよび太陽電池モジュール | |
JP2012023082A (ja) | 太陽電池電極用ペーストおよび太陽電池セル | |
KR20140019100A (ko) | 태양 전지 집전 전극 형성용 도전성 조성물 및 태양 전지 셀 | |
JP2012178456A (ja) | 太陽電池集電電極形成用導電性組成物および太陽電池セル | |
JP6361843B1 (ja) | 導電性組成物 | |
TW201249935A (en) | Paste used for electrode of solar cell and solar cell unit | |
TW201409486A (zh) | 太陽能電池集電電極形成用導電性組成物及太陽能電池單元 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14813437 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2015522935 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167000003 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14813437 Country of ref document: EP Kind code of ref document: A1 |