WO2014199770A1 - Electrode pour condensateurs, procédé de production de ladite électrode et élément condensateur associé - Google Patents

Electrode pour condensateurs, procédé de production de ladite électrode et élément condensateur associé Download PDF

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Publication number
WO2014199770A1
WO2014199770A1 PCT/JP2014/062961 JP2014062961W WO2014199770A1 WO 2014199770 A1 WO2014199770 A1 WO 2014199770A1 JP 2014062961 W JP2014062961 W JP 2014062961W WO 2014199770 A1 WO2014199770 A1 WO 2014199770A1
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Prior art keywords
ultrathin
oxide
base metal
capacitor
electrode
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PCT/JP2014/062961
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English (en)
Japanese (ja)
Inventor
紀一 藤平
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株式会社村田製作所
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Publication of WO2014199770A1 publication Critical patent/WO2014199770A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers

Definitions

  • the present invention relates to a capacitor electrode, a method for manufacturing the capacitor electrode, and a capacitor element, and more specifically, a capacitor electrode having a dielectric layer formed on the electrode, a method for manufacturing the capacitor electrode, and the capacitor electrode.
  • the present invention relates to a small and large capacity capacitor element such as a solid electrolytic capacitor.
  • a capacitor generates a capacitance by forming a dielectric layer between a pair of electrodes. Since the capacitance of such a capacitor is inversely proportional to the distance between the electrodes and proportional to the relative dielectric constant, it is desirable to use a high dielectric constant material capable of forming a thin film.
  • Patent Document 1 a capacitor including an anode, a cathode, and a dielectric layer provided between the anode and the cathode, on the surface of a conductive substrate used as the anode or the cathode.
  • a capacitor in which an adhesion auxiliary layer is provided, and a titanium oxide nanosheet layer is provided as the dielectric layer on the adhesion auxiliary layer.
  • a titanium oxide nanosheet layer is provided on an adhesion assisting layer, so that the titanium oxide nanosheet layer is uniformly deposited on a conductive substrate, whereby a thin and uniform titanium oxide nanosheet is obtained.
  • the layer is formed as a dielectric layer to obtain a capacitor having a large capacitance.
  • Patent Document 2 proposes a dielectric element in which a dielectric thin film is interposed between electrodes, wherein the dielectric thin film is composed of a layer of perovskite nanosheets.
  • the perovskite nanosheet is a high dielectric constant material that functions even if it is a nano-order ultrathin layer, such a perovskite nanosheet is obtained by single-layer exfoliation of layered perovskite oxide. In this way, we are trying to obtain a small and large capacity capacitor.
  • the dielectric layer usually has a predetermined shape such as a rectangular shape, but the shape of the nanosheet is not constant as described above, and varies in size and shape in the surface direction. Therefore, in order to form a dielectric layer having a predetermined shape, it is necessary to arrange a plurality of nanosheets side by side.
  • the present invention has been made in view of such circumstances, and includes an electrode for a capacitor provided with a dielectric layer having a good insulating property in which generation of leakage current is suppressed, a method for manufacturing the capacitor electrode, and the capacitor
  • An object of the present invention is to provide a small-sized and large-capacitance capacitor element using a working electrode.
  • a capacitor electrode according to the present invention includes a plurality of ultrathin pieces made of a second oxide having a higher relative dielectric constant than the first oxide containing an element constituting a base metal.
  • a body is deposited in a flat shape on the surface of the base metal, and an amorphous oxide is filled between the ultrathin pieces, and a dielectric layer is formed by the ultrathin pieces and the amorphous oxide. It is characterized by forming.
  • the space between the ultrathin pieces is filled with amorphous oxide, so that gaps and defects can be suppressed between the ultrathin pieces, leakage current can be reduced, and insulation can be improved. be able to.
  • the ultrathin piece has a length of 100 to 10,000,000 times the thickness.
  • the ultrathin piece has a thickness of 2 nm or less.
  • the base metal is preferably formed of a valve metal.
  • an amorphous oxide composed of the first oxide in which the base metal is oxidized is easily filled between the ultrathin pieces.
  • the second oxide has a perovskite crystal structure.
  • the oxide having a perovskite crystal structure has a high relative dielectric constant, it is possible to obtain a large-capacity capacitor element.
  • the amorphous oxide is formed of the first oxide.
  • the method for manufacturing a capacitor electrode according to the present invention includes, in a solution, an ultrathin piece made of a second oxide having a higher relative dielectric constant than a first oxide containing an element constituting a base metal.
  • a dispersion solution preparing step of preparing an ultrathin body dispersion solution, and immersing the base metal in the ultrathin body dispersion solution, and electrophoresing the ultrathin body on the surface of the base metal It includes a deposition step of depositing and a filling step of oxidizing the base metal and filling an amorphous oxide between the ultrathin pieces.
  • the ultrathin piece is deposited on the surface of the base metal by electrophoresis, the deposition amount can be easily controlled by the applied voltage and the processing time, and an ultrathin piece thin film having a desired thickness can be obtained. Further, since the base metal is subjected to an oxidation treatment and an amorphous oxide is filled between the ultrathin pieces, the ultrathin pieces are filled with a dense insulator, whereby a capacitor having good insulation properties. Electrodes can be manufactured.
  • valve metal for the base metal.
  • the oxidation treatment includes an anodization treatment.
  • the capacitor element according to the present invention is characterized in that a counter electrode is formed on the surface of the capacitor electrode described above.
  • the counter electrode includes a conductive polymer.
  • the plurality of ultrathin pieces made of the second oxide having a higher relative dielectric constant than the first oxide containing the element constituting the base metal are the base metal.
  • an ultrathin piece made of a second oxide having a higher relative dielectric constant than the first oxide containing the element constituting the base metal is used as a solution.
  • a dispersion solution preparation step of dispersing the substrate metal in the ultrathin body dispersion solution, immersing the base metal in the ultrathin body dispersion solution, and performing electrophoresis on the surface of the base metal And a filling step in which the base metal is subjected to oxidation treatment and an amorphous oxide is filled between the ultrathin piece bodies. Therefore, the ultrathin piece is formed on the surface of the base metal by electrophoresis.
  • the deposition amount can be easily controlled by the applied voltage and the processing time, and an ultrathin body layer having a desired thickness can be obtained. Since the amorphous metal is filled between the ultrathin pieces by subjecting the base metal to an oxidation treatment, the space between the ultrathin pieces is filled with a dense insulator, thereby providing good insulation. A capacitor electrode can be manufactured.
  • the counter electrode is formed on the surface of any of the capacitor electrodes described above, a desired small size and large capacity can be obtained with good insulation with suppressed leakage current. It is possible to easily obtain a capacitor element such as a solid electrolytic capacitor having.
  • FIG. 1 is a perspective view schematically showing an embodiment of a capacitor electrode according to the present invention. It is sectional drawing which showed the ultra-thin piece body of this invention typically. It is a schematic diagram which shows an electrophoresis process. It is a schematic diagram which shows an anodizing process. It is sectional drawing which shows one Embodiment of the capacitor
  • SEM scanning electron microscope
  • FIG. 1 is a perspective view showing an embodiment of a capacitor electrode according to the present invention.
  • this capacitor electrode 1 a plurality of ultrathin pieces 3 are deposited flat on the surface of the base metal 2, and the amorphous oxide 4 is filled between these ultrathin pieces 3, The ultrathin piece 3 and the amorphous oxide 4 form a dielectric layer 5.
  • the base metal 2 is not particularly limited, but a valve metal that can be easily oxidized by an oxidation treatment such as anodizing treatment, such as Al, Ta, Ti, Nb, V, or the like can be used.
  • the ultrathin piece 3 is formed of a first oxide containing an element constituting the base metal 2, for example, a second oxide having a higher relative dielectric constant than Al 2 O 3 or Ta 2 O 5. Accordingly, the dielectric layer 5 having a thin layer and a large relative dielectric constant can be obtained, and a small and large capacity capacitor element can be realized.
  • the amorphous oxide 4 is formed by oxidizing the base metal 2 as will be described later. Therefore, the amorphous oxide 4 is formed of the first oxide containing the elements constituting the base metal 2.
  • oxides such as Al 2 O 3 and Ta 2 O 5 containing an element constituting the base metal to be the first oxide have a relative dielectric constant of about 10 to 25. Therefore, if the relative dielectric constant of the second oxide forming the ultrathin body 3 is not larger than the relative dielectric constant of the first oxide, the dielectric layer 5 having a high relative dielectric constant can be obtained. Disappear.
  • the second oxide has a higher dielectric constant than that of the first oxide.
  • the second oxide is not particularly limited as long as it has a higher relative dielectric constant than the first oxide, but cesium titanate having a relative dielectric constant of about 80.
  • a composite oxide having a perovskite crystal structure, such as a layered perovskite compound, such as a system compound or a calcium niobate compound having a relative dielectric constant of about 180 can be preferably used.
  • the ultrathin piece 3 preferably has a sufficiently high aspect ratio a indicating the ratio of the length dimension L to the thickness dimension t.
  • the aspect ratio a is 100 to 10,000.
  • 1,000 ultrathin pieces 3 can be used preferably.
  • the thickness of the dielectric layer 5 is not particularly limited, but it is preferably as thin as possible from the viewpoint of realizing a capacitor element having a desired large capacitance.
  • a plurality of ultrathin pieces 3 made of the second oxide having a higher relative dielectric constant than the first oxide containing the element constituting the base metal are the base metal. 2 is deposited in a flat shape, and an amorphous oxide 4 is filled between the ultrathin pieces 3, and the dielectric layer 5 is formed by the ultrathin pieces 3 and the amorphous oxide 4. Therefore, it is possible to suppress the occurrence of gaps and defects between the thin piece bodies 3, thereby reducing the leakage current and further improving the insulation.
  • an ultrathin piece is deposited on the surface of the metal foil using electrophoresis.
  • FIG. 3 is a diagram schematically showing the electrophoresis apparatus.
  • a metal foil 7 having a predetermined size to be the base metal 2 is immersed in the ultrathin piece dispersion solution 6, and the counter rod 8 is further immersed in the ultrathin piece dispersion solution 6 so as to face the metal foil 7.
  • the metal foil 7 is used as an anode and the counter bar 8 is used as a cathode
  • the metal foil 7 and the counter bar 8 are energized, the negatively charged ultrathin body 3 is, as indicated by the arrow, the anode metal foil.
  • the ultrathin piece 3 is attracted by 7 and adhered to the surface of the metal foil 7 by electrophoresis.
  • the metal foil 7 is anodized.
  • FIG. 4 is a diagram schematically showing an anodizing apparatus.
  • This anodizing device includes a chemical conversion electrolyte 9 in which a metal foil 7 can be immersed, a container 10 for storing the chemical conversion electrode 9, and a constant temperature water tank 11 in which the container 10 can be accommodated. And is configured to be energized between the metal foil 7 and the container 10.
  • the container 10 in which the chemical electrolyte 9 is stored is immersed in a constant temperature water tank 11 adjusted to a predetermined temperature (for example, 20 to 50 ° C.) and the metal foil 7 on which the ultrathin piece 3 is deposited is predetermined.
  • the metal foil 7 is set in the container 10 so that the region is in contact with the chemical conversion electrolyte 9.
  • an aqueous solution containing boric acid, oxalic acid, sulfuric acid, adipic acid or a salt thereof having a concentration of 1 to 20% by weight can be used.
  • the metal foil 7 is used as an anode
  • the container 10 is used as a cathode
  • the current density is set to 1 to 400 mA / cm 2
  • the current between the metal foil 7 and the container 10 is reduced to a predetermined value (for example, 1 mA) or less.
  • Energize This causes an oxidation-reduction reaction to oxidize the metal foil 7 exposed from the gap between the ultrathin pieces 3 and fill the gap with the amorphous oxide 4 as the first oxide. Thereby, the capacitor electrode 1 is produced.
  • the ultrathin piece 3 made of the second oxide having a higher relative dielectric constant than the first oxide containing the element constituting the base metal is dispersed in the solution.
  • the deposition amount can be easily controlled by the applied voltage and the processing time, and an ultrathin body thin layer having a desired thickness can be obtained.
  • the base metal 2 is oxidized to fill the amorphous oxide 4 between the ultrathin pieces 3, the space between the ultrathin pieces 3 is filled with a dense insulator, thereby insulating Capacitor electrodes with good properties can be manufactured.
  • this capacitor electrode 1 Using this capacitor electrode 1, a small and large capacity capacitor element, for example, a solid electrolytic capacitor can be easily obtained.
  • FIG. 5 is a cross-sectional view schematically showing one embodiment of a solid electrolytic capacitor as a capacitor element.
  • This solid electrolytic capacitor has a PEDOT-PSS (poly- (3,4) ethylenedioxythiophene) on the surface of the capacitor electrode 1, that is, the surface of the dielectric layer 5 (ultra-thin piece 3 and amorphous oxide 4).
  • PEDOT-PSS poly- (3,4) ethylenedioxythiophene
  • -A solid electrolyte layer 12 made of a conductive polymer such as polystyrene sulfonate) is formed to obtain a solid electrolyte layer 12 which becomes a counter electrode of the base metal 2.
  • the surface of the anode layer made of the base metal 2 can be made larger by making the surface of the base metal 2 made of the valve action metal etched. can do.
  • the dielectric layer 5 is formed of the ultrathin piece 3 and the amorphous oxide 6, a large capacitance can be obtained.
  • this solid electrolytic capacitor can be easily manufactured by applying a conductive polymer to the surface of the capacitor electrode 1 described above and drying it.
  • the solid electrolyte layer 12 serving as the counter electrode of the base electrode 2 is formed on the surface of the capacitor electrode 1, a capacitor element represented by a small and large-capacity solid electrolytic capacitor is used. Can be obtained.
  • the present invention is not limited to the above embodiment.
  • the base metal is anodized to produce an amorphous oxide.
  • the oxidation process is not limited to an electrochemical method such as anodizing.
  • chemical oxidation treatment for example, oxidation treatment may be performed by immersing the base metal in an acidic solution such as nitric acid.
  • the solid electrolyte layer 12 that is the counter electrode of the base metal 2 is formed of PEDOT-PSS, but other conductive polymers such as various polythiophene compounds, polypyrrole compounds, and polyfuran compounds are used. May be.
  • Example Sample (Preparation of ultrathin body dispersion) Methanol: 240 mL and ethylene glycol: 120 mL were weighed and mixed to prepare a mixed solution.
  • the aluminum foil was immersed in the ultrathin body dispersion solution so that the immersion area was about 1 cm 2 (total of about 2 cm 2 on the front and back sides). Then, a counter bar made of Pt is immersed in the aqueous sodium hydroxide solution, and the aluminum foil is used as an anode, the counter bar is used as a cathode, a voltage of 5 V is applied for 7 minutes, and electrophoresis is performed to form an ultrathin piece on the aluminum foil. Deposited.
  • the aluminum foil was taken out from the ultrathin piece dispersion solution, naturally dried, washed with pure water, and dried again.
  • a stainless steel container in which an aqueous solution of ammonium adipate was stored was immersed in a constant temperature water bath adjusted to 40 ° C., and the temperature of the aqueous solution of ammonium adipate was kept at 40 ° C.
  • the aluminum foil of 1 cm in length and 2 cm in width set the aluminum foil in the stainless steel container so that the area of 1 cm in length and 1 cm in width is immersed in the aqueous solution of ammonium adipate, the aluminum foil is the anode.
  • the stainless steel container was placed as a cathode, and a 20 V DC voltage was applied until the current value became 1 mA or less to perform anodization.
  • PEDOT-PSS manufactured by Heraeous, Clevios PH1000
  • a counter electrode thereby producing an example sample of Example 1 did.
  • a comparative example sample of Example 1 was prepared by the same method and procedure as the above example sample except that the anodizing treatment was not performed.
  • Example evaluation About the example sample and the comparative example sample, a precision LCR meter (manufactured by Agilent Technologies, 4284A) was used, and measurement was performed at a measurement frequency of 1 kHz and an applied voltage of 1V. As a result, the capacitance of the example sample was 2.2 ⁇ F and the comparative sample was 2.0 ⁇ F.
  • the example sample and the comparative example sample With respect to the example sample and the comparative example sample, a DC voltage of 1 V was applied between the electrodes, and the current density after 1 minute was measured. As a result, the example sample was 2.8 ⁇ 10 ⁇ 5 A / cm 2 . On the other hand, the comparative sample increased to 1.4 ⁇ 10 ⁇ 4 A / cm 2 , and it was confirmed that the comparative sample had a larger leakage current than the example sample.
  • Example Sample An example sample was prepared in the same manner as in Example 1 except that calcium niobate was used in place of the titanate compound as an ultrathin piece.
  • potassium carbonate 7.6 g (0.055 mol)
  • calcium carbonate 20.0 g (0.2 mol)
  • niobium pentoxide 39.8 g (0.15 mol)
  • Heat treatment was performed at a temperature of 1200 ° C. for 12 hours to prepare a powder of calcium potassium niobate (KCa 2 Nb 3 O 10 ) which is a layered perovskite compound.
  • this calcium potassium niobate 50 g was subjected to an acid treatment for 72 hours in a 2000 cm 3 nitric acid aqueous solution having a molar concentration of 5 mol / L, followed by filtration and drying, and a calcium niobate proton (HCa 2 Nb 3 O 10 ⁇ 1.5H 2 O) was obtained.
  • FIG. 6 is an SEM image of an ultrathin piece formed on an aluminum foil.
  • a comparative example sample of Example 2 was prepared by the same method and procedure as the above example sample except that the anodizing treatment was not performed.
  • Example evaluation The capacitance of the example sample and the comparative example sample was measured by the same method and procedure as in Example 1. As a result, the example sample was 4.8 ⁇ F and the comparative example sample was 4.2 ⁇ F.
  • the example sample when a DC voltage of 1 V was applied between the electrodes and the current density after one minute was measured, the example sample was 2.33 ⁇ 10 ⁇ 5 A / cm 2 .
  • the comparative sample increased to 1.7 ⁇ 10 ⁇ 4 A / cm 2 , and it was confirmed that the comparative sample had a larger leakage current than the example sample.
  • Capacitor electrodes having a dielectric layer with suppressed generation of gaps and defects can be obtained.
  • Capacitor elements such as small and large-capacity solid electrolytic capacitors are realized using these capacitor electrodes.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne une électrode (1) destinée à des condensateurs, dans laquelle une pluralité de flocons ultra-fins (3), constitués d'un deuxième oxyde à constante diélectrique relative supérieure à celle d'un premier oxyde contenant un élément de métal de base, tel que Al, constituant un métal de base (2), sont déposés sur la surface du métal de base (2) dans un état aplati et les espaces entre les flocons ultra-fins (3) sont remplis d'un oxyde amorphe (4), de sorte qu'une couche diélectrique (5) soit formée par les flocons ultra-fins (3) et l'oxyde amorphe (4). L'oxyde amorphe (4) est constitué du premier oxyde et il est obtenu par oxydation anodique du métal de base (2). Un élément condensateur, tel qu'un condensateur électrolytique solide, peut être obtenu par formation d'une couche d'électrolyte solide sur la surface de l'électrode (1) pour condensateurs. L'invention concerne donc : une électrode pour condensateurs, pourvue d'une couche diélectrique qui est supprimée en présence d'un courant de fuite et qui présente de bonnes propriétés d'isolation; un procédé de production de ladite électrode; et un élément condensateur haute capacité de petites dimensions, tel qu'un condensateur électrolytique solide, mettant en oeuvre ladite électrode.
PCT/JP2014/062961 2013-06-12 2014-05-15 Electrode pour condensateurs, procédé de production de ladite électrode et élément condensateur associé WO2014199770A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019083315A (ja) * 2017-10-27 2019-05-30 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． セラミック電子部品およびその製造方法、ならびに電子装置
JP2020193267A (ja) * 2019-05-28 2020-12-03 株式会社豊田中央研究所 誘電体フィルム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0461704A (ja) * 1990-06-27 1992-02-27 Daishinku Co 高分子複合誘電体
JPH08167543A (ja) * 1994-12-12 1996-06-25 Matsushita Electric Ind Co Ltd 電解コンデンサ用アルミニウム電極箔およびその製造方法
JP2005072242A (ja) * 2003-08-25 2005-03-17 Toray Ind Inc キャパシタ
JP2005109017A (ja) * 2003-09-29 2005-04-21 Fujitsu Ltd キャパシタ素子
JP2008205112A (ja) * 2007-02-19 2008-09-04 Fujitsu Ltd 電解コンデンサおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0461704A (ja) * 1990-06-27 1992-02-27 Daishinku Co 高分子複合誘電体
JPH08167543A (ja) * 1994-12-12 1996-06-25 Matsushita Electric Ind Co Ltd 電解コンデンサ用アルミニウム電極箔およびその製造方法
JP2005072242A (ja) * 2003-08-25 2005-03-17 Toray Ind Inc キャパシタ
JP2005109017A (ja) * 2003-09-29 2005-04-21 Fujitsu Ltd キャパシタ素子
JP2008205112A (ja) * 2007-02-19 2008-09-04 Fujitsu Ltd 電解コンデンサおよびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019083315A (ja) * 2017-10-27 2019-05-30 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． セラミック電子部品およびその製造方法、ならびに電子装置
JP7336758B2 (ja) 2017-10-27 2023-09-01 三星電子株式会社 セラミック電子部品およびその製造方法、ならびに電子装置
JP2020193267A (ja) * 2019-05-28 2020-12-03 株式会社豊田中央研究所 誘電体フィルム
JP7318310B2 (ja) 2019-05-28 2023-08-01 株式会社豊田中央研究所 誘電体フィルム

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