WO2014198107A1 - 基板的清洗方法 - Google Patents

基板的清洗方法 Download PDF

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Publication number
WO2014198107A1
WO2014198107A1 PCT/CN2013/088099 CN2013088099W WO2014198107A1 WO 2014198107 A1 WO2014198107 A1 WO 2014198107A1 CN 2013088099 W CN2013088099 W CN 2013088099W WO 2014198107 A1 WO2014198107 A1 WO 2014198107A1
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WO
WIPO (PCT)
Prior art keywords
substrate
cleaning
water
foreign matter
cleaning method
Prior art date
Application number
PCT/CN2013/088099
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English (en)
French (fr)
Inventor
张毅
翁铭廷
程大富
郭知广
尹希磊
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2014198107A1 publication Critical patent/WO2014198107A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • Embodiments of the present invention relate to a method of cleaning a substrate. Background technique
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED Organic Light-Emitting Diode
  • the substrate undergoes a series of processes such as photolithography, wet etching, and stripping, which often generate organic foreign matter, so as not to affect the quality of subsequent products.
  • the substrate is usually washed with normal temperature water to achieve the purpose of removing organic foreign matter.
  • Embodiments of the present invention provide a method of cleaning a substrate, comprising: preheating a substrate; cleaning the pretreated substrate with a cleaning agent; and rinsing the cleaned substrate.
  • the preheating treatment of the substrate comprises: heating the substrate with a hot gas source, a hot water source, and an infrared heat source.
  • the substrate is preheated to a temperature of 40 to 120 °C.
  • the substrate is preheated to a temperature of 100 to 120 °C.
  • the cleaning agent is one or more of an alcohol lotion, a benzene lotion, an ether or a lipid capable of dissolving organic foreign matter on the surface of the substrate.
  • the alcohol lotion is isopropyl alcohol.
  • the cleaning agent is an inorganic solvent capable of dissolving organic foreign matter on the surface of the substrate.
  • the inorganic solvent is a mixed solution of ammonia water and hydrous water, and the volume ratio of the ammonia water to the hydrous water is 1:3 to 2:1.
  • the volume ratio of ammonia to hydrous water is 1:1.
  • the rinsing the cleaned substrate comprises:
  • the substrate is rinsed with high pressure pure water or high pressure water vapor two fluids.
  • the cleaning of the substrate with a cleaning agent further includes applying a heat to the substrate.
  • FIG. 1 is a flow chart of a method for cleaning a substrate according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing the molecular activity of organic impurities on a surface of a substrate in a normal temperature state according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing the molecular activity of organic impurities on a surface of a substrate in a heated state according to an embodiment of the present invention
  • FIG. 4 is a cleaning of a substrate according to an embodiment of the present invention
  • a block diagram of the structure of the device
  • FIG. 5 is a schematic diagram of an example of a structure of a cleaning device for a substrate according to an embodiment of the present invention. detailed description
  • an embodiment of the present invention provides a substrate cleaning method, which includes the following steps: Step S101, preheating the substrate.
  • the substrate is heated by a heat source such as a hot gas source, a hot water source, or an infrared heat source.
  • a heat source such as a hot gas source, a hot water source, or an infrared heat source.
  • the heating temperature of the hot water source is 80-100 °C, and the heating temperature of the hot gas source or the infrared heat source substrate may be 100-120 °C.
  • the substrate is preheated at a temperature of 25 to 120 ° C.
  • the substrate is preheated to 40 to 120 ° C, for example, the substrate is preheated to 100 to 120 ° C.
  • the preheating temperature of the substrate can be adjusted according to the needs of the cleaning process.
  • the substrate can be heated to 40 ° C, 50 ° C, 60 ° C, 70 ° C, 80 ° C, 90 °. C, 100 ° C, 110 ° C or 120 ° C. The higher the temperature at which the substrate is heated, the higher the molecular activity of the organic foreign matter, and the easier it is to be dissolved by the cleaning agent.
  • the molecular activity of organic foreign matter (impurity) present on the surface of the substrate is weak at room temperature, and it is not easy to dissolve with the cleaning agent.
  • the above method is adopted. Preheating the substrate can greatly increase the molecular activity of the organic polymer foreign matter, promote the dissolution of the organic foreign matter in the cleaning agent, and reduce the temperature difference caused to the surface of the substrate during the cleaning process, thereby further promoting the subsequent cleaning effect.
  • Step S102 Dissolving and cleaning the pretreated substrate with a cleaning agent.
  • a cleaning agent is sprayed on a substrate that has been preheated, and an organic foreign matter on the surface of the substrate is dissolved by a cleaning agent to completely remove organic foreign matter adhering to the substrate.
  • the cleaning agent is selected from a lotion which is similar to the organic foreign matter on the substrate, and may be an organic solvent which dissolves organic foreign matter on the surface of the substrate or an inorganic solvent which can dissolve organic foreign matter on the surface of the substrate.
  • the organic solvent is one of an alcohol lotion, a benzene lotion, an ether or a lipid.
  • the alcohol lotion is preferably isopropanol.
  • the inorganic solvent is, for example, a mixed solution of ammonia water and water and water to clean organic foreign matter on the surface of the substrate.
  • the volume ratio of the ammonia water to the hydrous water is 1:3 to 2:1, for example, the volume ratio of the ammonia water to the water water is 1:1.
  • the cleaning agent in this embodiment includes, but is not limited to, the solution listed above, and other solutions capable of dissolving with the organic foreign matter may be used.
  • the substrate is further heated.
  • the temperature for secondary heating of the substrate is 25 to 120 ° C, and the temperature may be, for example, 25 ° C, 30 ° C, 35 ° C, 40 ° C, 50 ° C, 60 ° C, 70 ° C, 80 °C, 90°C, 100°C, 110°C or 120°C.
  • Step S103 Flush the cleaned substrate.
  • pure water rinsing or water vapor two-fluid mixing rinsing can be used to flush the lotion and other impurities together by the impact force of the high-pressure water stream or the high-pressure water vapor two-fluid, or the impact of the gas bubble blasting. Furthermore, the cleanliness of the surface of the substrate is further improved, the residual amount of impurities is reduced, and the cleaning of the subsequent products is provided.
  • the pure water washing or the steam two-fluid flushing in this step may use pure water or water vapor two-fluid after heating, or pure water or water vapor two-fluid without heating, and the effect of heating is better than that of using no heating. The volatilization of the lotion can be increased to improve the cleaning effect.
  • the method for cleaning a substrate provided by the present invention by preheating the substrate, and then dissolving and cleaning the substrate with a cleaning agent, can effectively increase the molecular activity of the organic foreign matter, promote the solubility of the organic foreign matter in the cleaning agent, and thereby effectively remove the fineness.
  • the organic foreign matter improves the cleanliness of the cleaning substrate, thereby improving the yield of the product.
  • another embodiment of the present invention further provides a cleaning device for a substrate, including:
  • a cleaning unit 20 for spraying a cleaning agent onto the pretreated substrate to dissolve and clean the substrate;
  • a rinsing unit 30 for rinsing the cleaned substrate A rinsing unit 30 for rinsing the cleaned substrate.
  • the first heating unit 10 includes a first bottom plate, and the first bottom plate is provided with at least one first spray head, and the first spray head is connected with a hot water source or a hot gas source, and sprays hot water or hot air to the substrate through the first spray head. Preheating the substrate;
  • the first heating unit 10 may also employ an infrared heating subunit to perform infrared heat of the substrate.
  • the first heating unit 10 further includes a hot water tank, which is heated by the normal temperature water and then transferred to the first nozzle through a high pressure pump and a pipe, and is ejected by the first nozzle to preheat the substrate.
  • the preheating treatment of the substrate 50 by the above means can greatly increase the molecular activity of the organic polymer foreign matter, promote the dissolution of the organic foreign matter and the cleaning agent, and reduce the substrate table during the cleaning process.
  • the temperature difference caused by the surface further promotes the subsequent cleaning effect.
  • the cleaning unit 20 includes a second bottom plate, and at least one second head is disposed on the second bottom plate, and the cleaning agent is sprayed onto the substrate through the second nozzle.
  • the cleaning agent is sprayed on the substrate which has been subjected to the preheating treatment, so that the organic foreign matter adhering to the substrate is completely removed by the similar organic matter of the cleaning agent and the organic foreign matter on the surface of the substrate.
  • the cleaning agent is selected from a lotion which is similar to the organic foreign matter on the substrate, and may be an organic lotion or an inorganic lotion.
  • the organic lotion may be an isopropyl alcohol (IPA) solution.
  • IPA isopropyl alcohol
  • the inorganic solvent is, for example, a mixed solution of ammonia water and water and water to clean organic foreign matter on the surface of the substrate.
  • the cleaning agent in this embodiment includes, but is not limited to, the solution listed above, and other solutions capable of dissolving with the organic foreign matter may be used.
  • the flushing unit 30 includes a third bottom plate on which at least one third spray head is disposed, and the substrate 50 is sprayed with pure water or water vapor two fluid through the third spray head.
  • the flushing unit 30 can also be connected to a high pressure pump for forming high pressure pure water or high pressure steam two fluids.
  • the washing agent and other impurities are washed together by the impact force of high-pressure water flow or high-pressure water vapor two-fluid or the impact of gas bubble blasting, thereby further improving
  • the cleanliness of the surface of the substrate reduces the amount of impurities remaining and provides a clean guarantee for subsequent product processing.
  • the rinsing unit 30 further includes a hot water tank that heats the normal temperature water and transmits it to the third nozzle through a high pressure pump and a pipe, and ejects it from the third nozzle to rinse the substrate.
  • the first bottom plate, the second bottom plate, and the third bottom plate may be the same component, such as the bottom plate 11 shown in FIG. 5, and the first nozzle, the second nozzle, and the third nozzle may also be the same component.
  • the showerhead 12 is shown in FIG.
  • the substrate 50 can be processed at different stages using different media using the same nozzle.
  • the first bottom plate, the second bottom plate, and the third bottom plate may not be the same component, and the first nozzle, the second nozzle, and the third nozzle may not be the same component.
  • the cleaning apparatus further includes a hot gas source 13, a high pressure pump 14, and a hot water source 15.
  • the cleaning device may further include a second heating unit, the first heating unit is located at one side of the substrate, and the second heating unit is located, for example, on the opposite side of the substrate, for cleaning the substrate in the cleaning unit.
  • the substrate is heated to further enhance the dissolution of organic foreign matter on the surface of the substrate in the cleaning agent to speed up the cleaning.
  • the cleaning device for the substrate provided by the embodiment of the present invention can dissolve and clean the substrate by heating the substrate while using the cleaning agent, thereby effectively increasing the molecular activity of the organic foreign matter, promoting the solubility of the cleaning agent and the organic foreign matter, and effectively removing the fine organic matter. Foreign matter, improve the cleanliness of the cleaning substrate, and thus improve the yield of the product.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

一种基板的清洗方法，包括：对基板进行预加热处理；采用清洗剂对预处理过的基板进行清洗；对清洗后的基板进行冲洗。

Description

基板的清洗方法 技术领域
本发明实施例涉及一种基板的清洗方法。 背景技术
随着科技的发展，液晶显示器技术也随之不断完善。 TFT-LCD( Thin Film Transistor-Liquid Crystal Display, 薄膜场效应晶体管 -液晶显示器 ) 以其图像 显示品质好、 能耗低、 环保等优势占据着显示器领域的重要位置， 同样， 近 几年兴起的基于 OLED (有机发光二极管 OrganicLight-EmittingDiode ) 的显 示技术也日益成熟， 其具有构造筒单， 厚度薄， 响应速度快， 丰富色彩等优 势。
在 LCD和 OLED的工艺过程中， 涉及多种高分子材料， 基板经过一系 列的光刻、 湿法刻蚀、 剥离等工艺， 往往会产生有机异物， 为了不影响后续 产品的生产质量， 现有技术中通常采用常温水清洗基板， 以达到去除有机异 物的目的。
但在实际操作中发现， 有机物异物在常温水的作用下很难彻底去除， 基 板上仍然残留一定的细小异物， 而这些细小异物 4艮容易诱发产品不良， 极大 地降^ 了产品的良率。 发明内容
本发明的实施例提供一种基板的清洗方法， 包括： 对基板进行预加热处 理；采用清洗剂对预处理过的基板进行清洗； 以及对清洗后的基板进行沖洗。
在一个示例中， 所述对基板进行预加热处理包括： 采用热气源、 热水源、 红外热源对基板进行加热处理。
在一个示例中， 所述基板预热至的温度为 40~120°C。
在一个示例中， 所述基板预热至的温度为 100~120°C。
在一个示例中，所述清洗剂为能够溶解基板表面的有机异物的醇类洗剂、 苯类洗剂、 醚类或脂类中的一种或多种。 在一个示例中， 所述醇类洗剂为异丙醇。
在一个示例中，所述清洗剂为能够溶解基板表面的有机异物的无机溶剂。 在一个示例中， 所述无机溶剂为氨水和水素水的混合溶液， 所述氨水与 水素水的体积比为 1:3~2:1。
在一个示例中， 所述氨水与水素水的体积比为 1:1。
在一个示例中， 所述对清洗后的基板进行沖洗包括：
采用高压纯水或高压水汽二流体对基板进行沖洗。
在一个示例中， 采用清洗剂对基板进行清洗的过程中， 还包括对基板进 行力口热。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例或现有技 术描述中所需要使用的附图作筒单地介绍， 显而易见地， 下面描述中的附图 仅仅涉及本发明的一些实施例， 并非对本发明的限制。
图 1为本发明实施例基板的清洗方法流程图；
图 2为本发明实施例中常温状态下基板表面有机杂质分子活性示意图； 图 3为本发明实施例中加热状态下基板表面有机杂质分子活性示意图； 图 4为本发明实施例提供的基板的清洗装置结构的方框图；
图 5为本发明实施例提供的基板的清洗装置结构的示例的示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚,下面将结合附图， 对本发明实施例中的技术方案进行清楚、 完整地描述， 显然， 所描述的实施 例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施 例， 本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实 施例， 都属于本发明保护的范围。
本发明要解决的技术问题是提供一种基板的清洗方法， 以克服现有技术 中的清洗方法难以去除基板表面的细 d、异物导致诱发产品不良， 造成产品良 率低下的缺陷。 如图 1所示， 本发明的一实施例提供一种基板清洗方法， 例 如包括如下步骤： 步骤 S101、 对基板进行预加热处理。
例如， 采用热气源、 热水源、 红外热源等热源对基板进行加热处理。 其 中热水源的加热温度为 80-100 °C , 采用热气源或红外热源基板加热温度可以 为 100-120°C。
基板预热的温度为 25~120°C , 例如， 将基板预加热至 40~120°C , 又例 如， 将基板预加热至 100~120°C。 在本发明实施例中， 基板的预加热温度可 以根据清洗工艺的需要来调整，例如， 可以将基板加热至 40°C、 50°C、 60°C、 70°C、 80°C、 90°C、 100°C、 110°C或 120°C。 基板的加热至的温度越高， 有 机异物的分子活性越高， 越容易被清洗剂溶解。
参考图 2 (图中箭头长短表示其分子活性强弱） ， 常温状态下， 基板表 面存在的有机异物 （杂质） 的分子活性较弱， 不容易与清洗剂进行溶解； 参考图 3 , 采用上述手段对基板进行预加热处理， 可以极大地增加有机 高分子异物的分子活性， 促进有机异物溶解于清洗剂， 并可降低在清洗过程 中对基板表面造成的温度差， 进一步促进后续清洗效果。
步骤 S102、 采用清洗剂对预处理过的基板进行溶解清洗。
例如， 对已经过预热处理的基板喷洒清洗剂， 利用清洗剂溶解基板表面 的有机异物， 将附着在基板上的有机异物彻底去除。
该清洗剂选用与基板上的有机异物可相似相溶的洗剂， 可以为可溶解基 板表面的有机异物的有机溶剂或者可以为可溶解基板表面的有机异物的无机 溶剂，
其中， 有机溶剂为醇类洗剂、 苯类洗剂、 醚类或脂类中的一种。 例如， 该醇类洗剂优选为异丙醇。
其中， 无机溶剂例如选用氨水和水素水的混合溶液来对基板表面上的有 机异物进行清洗。 该混合溶液中， 所述氨水与水素水的体积比为 1:3~2:1 , 例 如， 氨水与水素水的体积比为 1:1。
当然， 本实施例中的清洗剂包括但并不局限于选用上述所列出的溶液， 也可选用其他能够与有机异物相溶解的溶液。
利用清洗剂与有机异物可进行的相溶解的化学反应， 进而将基板表面上 的有机异物去除掉。
为了进一步提高有机异物的分子活性， 使得其可溶解地更快清洗剂， 在 采用清洗剂对基板进行清洗的过程中， 还包括对基板进行二次加热。 其中， 对基板进行二次加热的温度为 25~120°C , 温度例如可以为 25 °C、 30°C、 35 °C、 40°C、 50°C、 60°C、 70°C、 80°C、 90°C、 100°C、 110°C或 120°C。
步骤 S103、 对清洗后的基板进行沖洗。
例如， 可采用纯水沖洗或水汽二流体混合沖洗两种方式， 通过高压水流 或高压水汽二流体的沖击力， 或气体气泡爆破的沖击力， 将洗剂及其他杂质 一并沖洗干净， 进而进一步提高基板表面的清洁度， 减少杂质的残留量， 对 后续产品加工提供清洁保障。 本步骤中的纯水沖洗或水汽二流体沖洗可以采 用加热后的纯水或水汽二流体也可以采用不加热的纯水或水汽二流体， 采用 加热的效果会优于采用不加热的效果， 这样可以增加洗剂的挥发， 从而提高 清洗的效果。
本发明提供的基板的清洗方法， 通过对基板进行预热， 之后采用清洗剂 对基板进行溶解清洗， 可有效增大有机异物的分子活性， 促进有机异物在清 洗剂中的溶解度， 进而有效去除细小的有机异物， 提高清洗基板的洁净度， 进而提升产品的良率。
另外， 如图 4所示， 本发明的另一实施例还提供一种基板的清洗装置， 包括：
加热单元 10, 其用于对基板进行预加热处理；
清洗单元 20, 其用于向预处理过的基板喷洒清洗剂， 对基板进行溶解清 洗；
沖洗单元 30, 其用于对清洗后的基板进行沖洗。
例如，该第一加热单元 10包括第一底板，所述第一底板上设置至少一个 第一喷头， 所述第一喷头连接热水源或热气源， 通过第一喷头向基板喷洒热 水或热气， 对基板进行预热处理；
或者，第一加热单元 10也可以采用红外线加热子单元，对基板进行红外 线力口热。
第一加热单元 10还包括热水箱 ,将常温水加热后通过高压泵和管道传输 到第一喷头， 由第一喷头喷出， 对基板进行预热。
上述手段对基板 50进行预加热处理，可以极大地增加有机高分子异物的 分子活性， 促进有机异物与清洗剂的溶解， 并可降低在清洗过程中对基板表 面造成的温度差， 进一步促进后续清洗效果。
其中，清洗单元 20包括第二底板，所述第二底板上间隔设置至少一个第 二喷头， 通过第二喷头向基板喷洒清洗剂。
例如， 对已经过预热处理的基板喷洒清洗剂， 使得清洗剂与基板表面的 有机异物利用相似相溶原理， 将附着在基板上的有机异物彻底去除。
其中， 该清洗剂选用与基板上的有机异物可相似相溶的洗剂， 例如可以 为有机洗剂， 也可以为无机洗剂。
其中， 有机洗剂可以为异丙醇（IPA )溶液。
无机溶剂例如选用氨水和水素水的混合溶液来对基板表面上的有机异物 进行清洗。
当然， 本实施例中的清洗剂包括但并不局限于选用上述所列出的溶液， 也可选用其他能够与有机异物相溶解的溶液。
利用有机异物可溶解于清洗剂， 进而将基板表面上的有机异物去除掉。 其中，沖洗单元 30包括第三底板，所述第三底板上设置至少一个第三喷 头， 通过第三喷头向基板 50喷洒纯水或水汽二流体。
其中，沖洗单元 30还可以连接高压泵，用于形成高压纯水或高压水汽二 流体。
采用纯水沖洗或水汽二流体混合沖洗两种方式， 通过高压水流或高压水 汽二流体的沖击力， 或气体气泡爆破的沖击力， 将洗剂及其他杂质一并沖洗 干净， 进而进一步提高基板表面的清洁度， 减少杂质的残留量， 对后续产品 加工提供清洁保障。
例如，沖洗单元 30还包括热水箱，将常温水加热后通过高压泵和管道传 输到第三喷头， 由第三喷头喷出， 对基板进行沖洗。
在实际装置中， 该第一底板、 第二底板和第三底板可以为同一部件， 例 如图 5中所示的底板 11 , 该第一喷头、 第二喷头和第三喷头也可以为同一部 件， 例如图 5中所示的喷头 12。 这样， 可采用同一喷头利用不同介质的在不 同阶段对基板 50进行处理。 当然， 该第一底板、 第二底板和第三底板也可以 不为同一部件， 该第一喷头、 第二喷头和第三喷头也可以不为同一部件。 此 夕卜， 在图 5所示的本发明的基板的清洗装置的示例中， 该清洗装置还包括热 气源 13、 高压泵 14和热水源 15。 另外， 该清洗装置还可以包括第二加热单元， 该第一加热单元位于基板 的一侧， 而第二加热单元例如位于基板该一侧相反的另一侧， 用于在清洗单 元对基板进行清洗的过程中， 对基板进行加热， 便于进一步加强基板表面的 有机异物溶解于清洗剂中， 加快清洗速度。
本发明的实施例提供的基板的清洗装置， 通过加热基板同时采用清洗剂 对基板进行溶解清洗， 可有效增大有机异物的分子活性， 促进清洗剂与有机 异物的溶解度， 进而有效去除细小的有机异物， 提高清洗基板的洁净度， 进 而提升产品的良率。
虽然上文中已经用一般性说明及具体实施方式， 对本发明作了详尽的描 述， 但在本发明基础上， 可以对之作一些修改或改进， 这对本领域技术人员 而言是显而易见的。 因此， 在不偏离本发明精神的基础上所做的这些修改或 改进， 均属于本发明要求保护的范围。

Claims

权利要求书
1、 一种基板的清洗方法， 包括：
对基板进行预加热处理；
采用清洗剂对预处理过的基板进行清洗； 以及
对清洗后的基板进行沖洗。
2、如权利要求 1所述的清洗方法， 其中， 所述对基板进行预加热处理包 括：
采用热气源、 热水源、 红外热源对基板进行加热处理。
3、如权利要求 1或 2所述的清洗方法， 其中， 所述基板预热到的温度为
40~120°C。
4、 如权利要求 3 所述的清洗方法， 其中， 所述基板预热到的温度为 100~120°C。
5、如权利要求 1至 4中任一项所述的清洗方法， 其中， 所述清洗剂为能 够溶解基板表面的有机异物的醇类洗剂、 苯类洗剂、 醚类或脂类中的一种或 多种。
6、 如权利要求 5所述的清洗方法， 其中， 所述醇类洗剂为异丙醇。
7、如权利要求 1至 6中任一项所述的清洗方法， 其中， 所述清洗剂为能 够溶解基板表面的有机异物的无机溶剂。
8、如权利要求 7所述的清洗方法， 其中， 所述无机溶剂为氨水和水素水 的混合溶液， 所述氨水与水素水的体积比为 1:3~2:1。
9、如权利要求 8所述的清洗方法， 其中， 所述氨水与水素水的体积比为
1:1。
10、 如权利要求 1至 9中任一项所述的清洗方法， 其中， 所述对清洗后 的基板进行沖洗包括：
采用高压纯水或高压水汽二流体对基板进行沖洗。
11、如权利要求 1至 10中任一项所述的清洗方法， 其中， 采用清洗剂对 基板进行清洗的过程中， 还包括对基板进行加热。
PCT/CN2013/088099 2013-06-09 2013-11-29 基板的清洗方法 WO2014198107A1 (zh)

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