WO2014172963A1 - 低温多晶硅薄膜、薄膜晶体管、其制备方法及显示面板 - Google Patents
低温多晶硅薄膜、薄膜晶体管、其制备方法及显示面板 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 240
- 238000000034 method Methods 0.000 claims abstract description 102
- 239000005543 nano-size silicon particle Substances 0.000 claims description 158
- 229920005591 polysilicon Polymers 0.000 claims description 82
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 24
- 238000002425 crystallisation Methods 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 14
- 238000005224 laser annealing Methods 0.000 claims description 12
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 74
- 239000000758 substrate Substances 0.000 description 25
- 239000011521 glass Substances 0.000 description 23
- 230000008025 crystallization Effects 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005499 laser crystallization Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 4
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 235000011470 Adenanthera pavonina Nutrition 0.000 description 1
- 240000001606 Adenanthera pavonina Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Definitions
- Embodiments of the present invention relate to a low temperature polysilicon film, a method of fabricating the same, a thin film transistor, a method of fabricating the same, and a display panel. Background technique
- Low temperature polysilicon thin film transistors have superior electrical properties compared to amorphous silicon (a-Si) thin film transistors.
- the size of the LTPS-TFT can be made smaller than that of the a-Si TFT, thereby increasing the transmittance of light, thereby reducing the load on the backlight module of the liquid crystal display panel and prolonging the life of the liquid crystal display panel.
- the low temperature polysilicon film (LTPS) can directly form a high-speed CMOS (Complementary Metal Oxide Semiconductor) driving circuit system on the substrate, the external printed circuit board has fewer pins, and the wiring is connected. The fewer points reduce the probability of defects in the liquid crystal display panel and increase the durability.
- CMOS Complementary Metal Oxide Semiconductor
- a polysilicon film is used as an active layer.
- an amorphous amorphous silicon film is first deposited as a precursor film, and then the precursor film is crystallized into a polysilicon film by, for example, excimer laser annealing.
- the pulse laser generated by the excimer laser has a short pulse width and a melting time of only several tens of nanoseconds, so the crystallization rate is fast, resulting in a small crystal grain size and easy generation of more crystals in the channel. This reduces carrier mobility and increases leakage current.
- the melting point of amorphous silicon is still high, and the energy of laser crystallization is limited by a certain range.
- the amorphous silicon which is completely melted is concentrated on the surface layer.
- the temperature of the bottom layer is lower than the melting point of the crystalline silicon, it is in a semi-molten state, and the direction of crystallization will grow upward from the molten seed crystal, and the polycrystalline silicon is columnar, so this affects the mobility of the carrier more.
- the energy density of the incident laser light is increased, the crystal grains are liable to be uneven, and there are significant protrusions which adversely affect the deposition of the subsequent film. Summary of the invention
- Embodiments of the present invention provide a low temperature polysilicon film, a preparation method thereof, and a thin film transistor
- the preparation method and the display panel can reduce grain boundaries and defects, and improve the quality of the thin film transistor.
- One aspect of the present invention provides a method of preparing a low temperature polysilicon film formed by crystallizing a nano silicon film as a precursor.
- the method includes the steps of: depositing a nano-silicon film; performing a dehydrogenation treatment on the deposited nano-silicon film; and crystallizing the dehydrogenated nano-silicon film to form a low-temperature polycrystalline silicon film.
- the deposited nano-silicon film contains crystalline nano-silicon grains having a volume of 50-60% of the volume of the deposited nano-silicon film.
- the step of depositing a nano-silicon film comprises: depositing a nano-silicon film by plasma enhanced chemical vapor deposition.
- the reaction gas is a mixed gas of 99.999% silane and 99.999% hydrogen, wherein the mass percentage of silane in the mixed gas 0.1-10%, the flow rate of the mixed gas is
- the RF frequency is 13.56 MHz, and the RF power is 30-500 W.
- the deposition time is 20 seconds to 30 minutes.
- the deposited nano-silicon film has a thickness of 30-100 nm.
- the nano-silicon in the deposited nano-silicon film has a particle size of l-40 nm, and the average particle size is
- the step of crystallizing the nano-silicon film to form a low-temperature polysilicon film comprises: crystallizing the nano-silicon film to form low-temperature polysilicon by excimer laser annealing, solid phase crystallization or metal induced lateral crystallization. film.
- the step of crystallizing the nano-silicon film to form a low-temperature polysilicon film comprises: crystallization of the nano-silicon film by an excimer laser pulse annealing method to form a low-temperature polysilicon film, wherein the laser pulse frequency is 200-400HZ, laser energy density is 240-250 mJ / cm 2
- Another aspect of the invention provides a method for preparing a thin film transistor, comprising preparing the low-temperature polysilicon film prepared by the embodiment of the invention as A low temperature polysilicon film of the source layer.
- a low temperature polysilicon film is prepared, which is prepared by the method provided by the embodiment of the present invention.
- Still another aspect of the present invention provides a thin film transistor including the low temperature polysilicon film provided by the embodiment of the present invention.
- a display panel comprising the thin film transistor according to the embodiment of the present invention is provided.
- FIG. 1 is a flow chart of a method for preparing a low-temperature polysilicon film according to an embodiment of the present invention
- FIG. 2 is a schematic view showing a method for preparing a low-temperature polysilicon film of FIG.
- FIG. 3 is a schematic structural diagram of a thin film transistor according to an embodiment of the present invention.
- Source 7 Drain 8: Laser generated by an excimer laser 9: Direction of movement of the laser 10: Nano-silicon film layer
- Embodiments of the present invention provide a method for preparing a low-temperature polysilicon film formed by crystallizing a nano-silicon film as a precursor, that is, a nano-silicon film is used as a precursor film of a polysilicon film.
- Low temperature polysilicon film is a branch of polysilicon film, in addition to high temperature polysilicon film (HTPS).
- the high temperature polysilicon film requires a high temperature annealing technique of 1000 ° C or higher in the preparation process to convert the amorphous silicon structure into a polysilicon structure.
- the preparation process of the low-temperature polysilicon film is usually completed below 600 ° C, which greatly reduces the energy consumption compared to the high-temperature polysilicon film.
- the nano-silicon film is a low-fiber material composed of a large number of nano-sized silicon micro-grains and contains a certain amount of crystalline components.
- crystalline components i.e., crystalline nano-silicon grains
- the ratio is merely illustrative, and those skilled in the art can select a nano-silicon film having other crystalline components in accordance with the principles disclosed in the present specification.
- the nano-silicon film can be deposited by a PECVD (plasma enhanced chemical vapor deposition) method.
- PECVD plasma enhanced chemical vapor deposition
- a sputtering method or the like For example, a sputtering method or the like.
- the nano-silicon film After forming a nano-silicon film having a certain amount of crystalline components, the nano-silicon film can be crystallized by an ELA (Excimer Laser Annealing) method to form a low-temperature polycrystalline silicon film. It can be understood that a person skilled in the art can also crystallize a polycrystalline silicon film by other methods, for example, by SPC (Solid Phase Crystallization) method or MILC (Metal Induced Lateral Crystallization) method. .
- ELA Excimer Laser Annealing
- the polysilicon film can be grown as a seed nanocrystalline crystal grain as a seed. Therefore, the grain size in the polycrystalline silicon film formed by crystallization is large, the grain boundary generated in the channel is reduced, the carrier mobility is improved, the leakage current is reduced, and the quality of the polysilicon film is improved.
- the nanocrystalline silicon film is used as a precursor for crystallization, which overcomes the problem of using an amorphous amorphous silicon film as a precursor film.
- the strict range limitation of the laser crystallization energy makes it easier to control the reaction conditions during the production process.
- Another embodiment of the present invention provides a method for preparing a low temperature polysilicon film. As shown in FIG. 1, the method includes the following steps 101-103:
- the nano-silicon film is deposited by the PECVD method.
- the nano-silicon film 10 contains only a very small amount of nano-sized silicon particles of amorphous silicon structure, that is, no crystalline component exists in the nano-silicon film 10 at this time.
- the particle size grows, and highly crystallized nano-silicon grains with a small amount of crystal phase are gradually formed.
- the PECVD method uses a mixed gas of silane (SiH 4 ) and hydrogen ( 3 ⁇ 4 ) as a reaction gas.
- the H-based etches the weak Si-Si bond on the surface of the nano-silicon film, removing the weak Si-Si bond, leaving a strong Si-Si bond, so that the growth rate of the nano-silicon film 10 is not too fast.
- the crystal lattice structure in which the bonding is good is preserved, and the disordered mesh composition is minimized to form nano silicon crystal grains.
- the nano-silicon grains formed in this step account for 50-60% of the volume of the nano-silicon film.
- a buffer layer 2 is first deposited on the glass substrate 1, and then a nano-silicon film 10 is deposited on the buffer layer 2.
- the deposited nano-silicon film is treated by a dehydrogenation process for 50-120 minutes at a temperature of, for example, 350 to 550 °C. Preferably, it is annealed, for example, at a temperature of 450 ° C for 90 minutes.
- the nano-silicon film is crystallized by the ELA method to form a low-temperature polysilicon film.
- Fig. 2 there is shown a schematic diagram of laser light generated by an excimer laser moving from right to left over the nano-silicon film 10 in the direction indicated by the arrow to crystallize it.
- the region 11 is a region of the nano-silicon film 10 which is being crystallized at this time, and on the right side thereof is a polysilicon film active layer 3 which has been crystallized.
- the nano-silicon film is deposited by the PECVD method, and the deposited nano-silicon film contains 50-60% of the nano-silicon grains occupying the volume of the nano-silicon film. Then, the nano-silicon film is dehydrogenated, and finally the nano-silicon film is crystallized to form Low temperature polysilicon film. Since the polycrystalline silicon thin film can be grown by using these crystalline nano silicon crystal grains as a seed crystal during the crystallization of the nano silicon thin film into a low temperature polycrystalline silicon thin film, the crystal grain size in the polycrystalline silicon thin film formed by the crystallization is large and reduced.
- the grain boundaries generated in the channel improve the carrier mobility and reduce the leakage current, thereby improving the quality of the polysilicon film.
- the crystallization of the nano-silicon film as a precursor overcomes the strict range limitation of the laser crystallization energy when the amorphous silicon film is used as the precursor film, and the reaction conditions can be easily controlled in the production process.
- a suitable deposition process parameter to control the growth rate of the nano-silicon film within a suitable range.
- a nano silicon film can be deposited by using the following process parameters.
- the reaction gas was a mixed gas of 99.999% silane and 99.999% hydrogen.
- the mass percentage of the silane in the mixed gas is 0.1 to 10%
- the flow rate of the mixed gas is 100 to 1500 sppm
- the working gas pressure is 10 - 2 to 10 3 Pa.
- the mass percentage of silane in the mixed gas is 10%.
- the working gas pressure is 10 2 Pa.
- the nano-silicon film may be deposited by the following process parameters.
- the RF frequency is 13.56MHz and the RF power is 30-500W.
- the radio frequency power is 100W.
- the nano-silicon film may be deposited by the following process parameters.
- the deposition time is 20 seconds -30 minutes.
- the nano-silicon film may be deposited by the following process parameters.
- the deposited nano-silicon film has a thickness of, for example, 30 to 100 nm. Further preferably, the thickness of the nano-silicon film is, for example, 50 nm.
- the nano-silicon film may be deposited by the following process parameters.
- the nano-silicon in the deposited nano-silicon film has a particle size of, for example, 1 to 40 nm, and an average particle size of, for example, 1 to 20 nm. Further preferably, for example, the nano-silicon has a particle size of 20 nm.
- the nano-silicon includes nano-silicon particles (grains) which form a crystalline structure and amorphous silicon particles which do not form a crystal-phase structure.
- the nano silicon film may be crystallized to form a low temperature polycrystal according to the following process parameters.
- Silicon film is crystallized by excimer laser annealing to form a low-temperature polysilicon film, for example, a laser pulse frequency of 200-400 Hz and a laser energy density of 240-250 mJ/cm 2 .
- the method of the present invention further provides a method for preparing a thin film transistor, which comprises the method for preparing a low temperature polycrystalline silicon film provided by the embodiment of the present invention.
- a low-temperature polysilicon film as an active layer in a thin film transistor is crystallized by a nano-silicon film, so that a crystal grain size in the polycrystalline silicon film formed by crystallization is large, and there is a decrease in The grain boundaries generated in the channel of the source layer improve carrier mobility and reduce leakage current, thereby improving the quality of the polysilicon film.
- the crystallization of the nano-silicon film as a precursor overcomes the strict range limitation of the laser crystallization energy when the amorphous silicon film is used as the precursor film, and the reaction conditions can be easily controlled in the production process.
- the embodiment of the present invention further provides a low-temperature polysilicon film prepared by the above-mentioned various low-temperature polycrystalline silicon film preparation methods provided by the embodiments of the present invention.
- the layer 3 is a polycrystalline silicon film as an active layer prepared by the low-temperature polysilicon film production method in the above embodiment.
- the low-temperature polysilicon film provided by the embodiment of the invention is crystallized by the nano-silicon film, so that the grain size in the polycrystalline silicon film formed by crystallization is larger, the grain boundary generated in the channel is reduced, and the carrier is improved.
- the mobility which reduces the leakage current, improves the quality of the polysilicon film.
- the crystallization of the nano-silicon film as a precursor overcomes the strict range limitation of the laser crystallization energy when the amorphous silicon film is used as the precursor film, and the reaction conditions can be easily controlled in the production process.
- the embodiment of the invention further provides a thin film transistor comprising the above-mentioned low-temperature polysilicon film provided by the embodiment of the invention.
- a low temperature polysilicon film provided by an embodiment of the present invention is used as a thin film transistor of an active layer.
- the thin film transistor comprises a glass substrate 1, a buffer layer 2, a polysilicon thin film active layer 3, a gate electrode 4, a gate insulating layer 5, a highly doped source region 3a on the left side of the polysilicon film active layer, and a polysilicon film active layer right
- the drain region 3b on the side, the source 6 and the drain 7.
- FIG. 3 is only a schematic illustration of a thin film transistor provided by an embodiment of the present invention, and the skilled person may also be known in the art. Common forms or common techniques are used to obtain other forms of transistors including the low temperature polysilicon film of the present invention.
- the glass substrate can be replaced with, for example, a plastic substrate or the like.
- the thin film transistor provided by the embodiment of the invention adopts a low temperature polysilicon film crystallized by a nano silicon film as an active layer, so that the crystal grain size in the polycrystalline silicon film formed by crystallization is large, and the crystal generated in the channel is reduced.
- the boundary thereby increasing the mobility of carriers and reducing the leakage current, thereby improving the quality of the thin film transistor.
- the crystallization of the nano-silicon film as a precursor overcomes the strict range limitation of the laser crystallization energy when the amorphous silicon film is used as the precursor film, and the reaction conditions can be easily controlled in the production process.
- the embodiment of the invention further provides a display panel, which comprises the thin film transistor provided by the embodiment of the invention.
- the low-temperature polysilicon film in the thin film transistor is crystallized by the nano-silicon film, so that the grain size in the polycrystalline silicon film formed by crystallization is larger, and the grain boundary generated in the channel is reduced, thereby The carrier mobility is improved, and the leakage current is reduced, thereby improving the quality of the polysilicon film.
- the crystallization of the nano-silicon film as a precursor overcomes the strict range limitation of the laser crystallization energy when the amorphous silicon film is used as the precursor film, and the reaction conditions can be easily controlled in the production process.
- PECVD process are deposited on a glass substrate and 80nm 8 ⁇ lOOnm and 802, Si0 2 and SiN x is formed a double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixed gas of 99.999% silane (SiH 4 ) and 99.999% hydrogen ( 3 ⁇ 4 ), the silane content is lwt%; the mixed gas flow rate is 300sppm; the radio frequency is 13.56MHz; the radio frequency power is 100W
- the working pressure is 100 Pa; the temperature of the glass substrate is 180 ° C; the deposition time is 10 minutes.
- the nano-silicon film layer is deposited under the above process parameters; the thickness of the obtained nano-silicon film is 40 nm, the average particle size of the nano-silicon is 15 nm, and the crystalline nano-silicon grains account for 52% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a dehydrogenation process at 450 ° C for 90 minutes, and then the nano-silicon film layer was treated by a XeCl excimer laser annealing process.
- the process parameters are as follows: the glass substrate temperature is 350 ° C, the ambient atmosphere is 20 Pa nitrogen atmosphere, the laser pulse frequency is 300 Hz, and the laser energy density is 250mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
- SiN x and SiO 2 of 80 nm and 100 nm were separately deposited on the glass substrate by a PECVD process to form a SiN x and SiO 2 double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixed gas of 99.999% silane (SiH 4 ) and 99.999% hydrogen ( 3 ⁇ 4 ), the silane content is 0.8 wt%; the mixed gas flow rate is 250 sppm; the radio frequency is 13.56 MHz; the RF power is 150 W; working pressure is 150 Pa; glass substrate temperature is 200 ° C; deposition time is 12 minutes.
- the nano-silicon film layer is deposited under the above process parameters; after testing, the obtained nano-silicon film has a thickness of 50 nm, the average particle size of the nano-silicon is 18 nm, and the crystalline nano-silicon grains account for 57% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a dehydrogenation process at 450 ° C for 90 minutes, and then the nano-silicon film layer was treated by a XeCl excimer laser annealing process.
- the process parameters are as follows: the temperature of the glass substrate is 350 ° C, the ambient atmosphere is a nitrogen atmosphere of lOPa, the laser pulse frequency is 300 Hz, and the laser energy density is 240 mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
- PECVD process are deposited on a glass substrate and 80nm 8 ⁇ lOOnm and 802, Si0 2 and SiN x is formed a double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixture of 99.999% silane (SiH 4 ) and 99.999% hydrogen (H 2 ), the silane content is lwt%; the mixed gas flow rate is 1300sppm; the radio frequency is 13.56MHz; the RF power is 200W; working pressure is lOOPa; glass substrate temperature is 180 ° C; deposition time is 10 minutes.
- a nano-silicon film layer is deposited under the above process parameters; after testing, the obtained nano-silicon film has a thickness of 70 nm, the average particle size of the nano-silicon is 5 nm, and the crystalline nano-silicon grains account for 55% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a 480 ° C dehydrogenation process for 85 minutes, and then the nano-silicon film layer was treated by a XeCl excimer laser annealing process.
- the process parameters are as follows: the glass substrate temperature is 350 ° C, the ambient atmosphere is 20 Pa nitrogen atmosphere, the laser pulse frequency is 220 Hz, and the laser energy density is 250 mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
- Example 4 SiN x and SiO 2 of 80 nm and 100 nm were separately deposited on the glass substrate by a PECVD process to form a SiN x and SiO 2 double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixed gas of 99.999% silane (SiH 4 ) and 99.999% hydrogen ( 3 ⁇ 4 ), the silane content is lwt%; the mixed gas flow rate is 200sppm; the radio frequency is 13.56MHz; the radio frequency power is 400W
- the working pressure is 100 Pa; the temperature of the glass substrate is 180 ° C; the deposition time is 10 minutes.
- the nano-silicon film layer is deposited under the above process parameters; after testing, the thickness of the obtained nano-silicon film is 100 nm, the average particle size of the nano-silicon is 12 nm, and the crystalline nano-silicon grains account for 54% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a 320 ° C dehydrogenation process for 110 minutes, and then the nano-silicon film layer was processed by a XeCl excimer laser annealing process.
- the process parameters are as follows: The glass substrate temperature is 350 ° C, the ambient atmosphere is 20 Pa nitrogen atmosphere, the laser pulse frequency is 350 Hz, and the laser energy density is 250 mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
- PECVD process are deposited on a glass substrate and 80nm 8 ⁇ lOOnm and 802, Si0 2 and SiN x is formed a double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixed gas of 99.999% silane (SiH 4 ) and 99.999% hydrogen (H 2 ), the silane content is lwt%; the mixed gas flow rate is lOOsppm; the radio frequency frequency is 13.56 MHz; the radio frequency power is 30W; working pressure of 10- 2 Pa; temperature of the glass substrate is 180 ° C; deposition time was 20 seconds.
- the nano-silicon film layer is deposited under the above process parameters; after testing, the obtained nano-silicon film has a thickness of 30 nm, the average particle size of the nano-silicon is 1 nm, and the crystalline nano-silicon grains account for 50% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a 320 ° C dehydrogenation process for 110 minutes, and then the nano-silicon film layer was processed by a XeCl excimer laser annealing process.
- the process parameters are as follows: The glass substrate temperature is 350 ° C, the ambient atmosphere is 20 Pa nitrogen atmosphere, the laser pulse frequency is 200 Hz, and the laser energy density is 245 mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
- Example 6 SiN x and SiO 2 of 80 nm and 100 nm were separately deposited on the glass substrate by a PECVD process to form a SiN x and SiO 2 double buffer layer.
- a nano-silicon film layer is deposited on the double buffer layer using a PECVD process.
- the process parameters are as follows:
- the reaction gas is a mixed gas of 99.999% silane (SiH 4 ) and 99.999% hydrogen ( 3 ⁇ 4 ), the silane content is 1wt%; the mixed gas flow rate is 1500sppm; the RF frequency is 13.56MHz; the RF power is 500W.
- the working pressure is lOOOPa; the temperature of the glass substrate is 180 ° C; the deposition time is 30 minutes.
- a nano-silicon film layer is deposited under the above process parameters; after testing, the obtained nano-silicon film has a thickness of 90 nm, the average particle size of the nano-silicon is 40 nm, and the crystalline nano-silicon grains account for 60% of the volume of the nano-silicon film.
- the nano-silicon film layer was treated by a 320 ° C dehydrogenation process for 110 minutes, and then the nano-silicon film layer was processed by a XeCl excimer laser annealing process.
- the process parameters are as follows: The glass substrate temperature is 350 ° C, the ambient atmosphere is 20 Pa nitrogen atmosphere, the laser pulse frequency is 400 Hz, and the laser energy density is 248 mJ/cm 2 . Under the above process parameters, the nano-silicon film layer is crystallized into a polysilicon film layer.
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