WO2014156932A1 - 積層体、バリアフィルム、及びこれらの製造方法 - Google Patents
積層体、バリアフィルム、及びこれらの製造方法 Download PDFInfo
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- WO2014156932A1 WO2014156932A1 PCT/JP2014/057699 JP2014057699W WO2014156932A1 WO 2014156932 A1 WO2014156932 A1 WO 2014156932A1 JP 2014057699 W JP2014057699 W JP 2014057699W WO 2014156932 A1 WO2014156932 A1 WO 2014156932A1
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- C23C16/405—Oxides of refractory metals or yttrium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/724—Permeability to gases, adsorption
- B32B2307/7242—Non-permeable
- B32B2307/7244—Oxygen barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
Definitions
- the present invention relates to a laminate, a barrier film, and a production method thereof.
- This application claims priority based on Japanese Patent Application No. 2013-0666165 filed in Japan on March 27, 2013 and Japanese Patent Application No. 2013-267184 filed on December 25, 2013 in Japan. , The contents of which are incorporated herein.
- CVD chemical vapor deposition
- PVD Physical Vapor Deposition
- Typical PVDs include a vacuum deposition method and a sputtering method.
- a sputtering method can generally form a high-quality thin film with high apparatus cost but excellent film quality and film thickness uniformity. Therefore, it is widely applied to liquid crystal displays and display devices.
- CVD is a method for growing a solid thin film by introducing a raw material gas into a vacuum chamber and decomposing or reacting one or more kinds of gases on a substrate with thermal energy.
- gas is decomposed or reacted, in order to promote the reaction during film formation or to lower the reaction temperature, there is also a method using plasma or a catalyst (catalyst) reaction, which is respectively PECVD (Plasma Enhanced CVD) and Cat. -It is called CVD etc.
- PECVD Plasma Enhanced CVD
- Cat. -It Cat. -It
- Such CVD is characterized by few film formation defects and is mainly applied to semiconductor device manufacturing processes such as gate insulating film formation.
- ALD Atomic Layer Deposition
- This ALD method is a method in which a substance adsorbed on the surface is formed one layer at a time by a chemical reaction on the surface, and is classified into the category of CVD.
- the ALD method is distinguished from general CVD by so-called CVD (general CVD) in which a thin film is grown by reacting on a substrate using a single gas or a plurality of gases simultaneously. is there.
- CVD general CVD
- the ALD method uses a precursor (TMA: Tri-Methyl Aluminium) or an active gas called a precursor and a reactive gas (also called a precursor in ALD) alternately.
- TMA Tri-Methyl Aluminium
- a precursor and a reactive gas also called a precursor in ALD
- the disadvantages of the ALD method include the need to use a special material to perform the ALD method and the resulting cost increase, and the biggest drawback is the slow deposition rate.
- the film formation rate is about 5 to 10 times slower than a film formation method such as normal vacuum deposition or sputtering.
- Patent Document 1 discloses a technique that can improve the step coverage of a film by the subsequent ALD method by performing a plasma treatment on an insulating layer on a semiconductor substrate.
- Patent Document 2 a technique for forming a gas permeable barrier layer on a plastic substrate or a glass substrate by performing atomic layer deposition by an ALD method is disclosed (for example, see Patent Document 2).
- a light-emitting polymer is mounted on a light-transmitting plastic substrate, and atomic layer deposition is performed on the surface and side surfaces of the light-emitting polymer by ALD (top coating).
- ALD top coating
- laminates in which an atomic layer deposition film is provided on the outer surface of a substrate by the ALD method are widely known, and these laminates are preferably used for gas barrier films having gas barrier properties. ing.
- the atomic layer deposition film is laminated on a polymer base material, and the growth form is different from the case where the inorganic crystal such as a conventional Si wafer is used as the base material. Probability is high.
- the adsorption sites of the precursor exist at a density approximately equal to the crystal lattice, and the film growth proceeds in the two-dimensional growth mode.
- the distribution density of the adsorption site of the precursor is low, so that the adsorbed and separated precursor is used as a nucleus to grow and expand three-dimensionally so that adjacent nuclei come into contact with the continuous film.
- the film is likely to grow in a columnar shape from the outer surface of the substrate toward the direction perpendicular to the outer surface of the substrate. That is, in the conventional laminate, a plurality of columnar structures are formed on the base material side by side, and thus gas may enter and exit through the gaps between the columnar structures. In other words, the conventional laminate may not have an ideal gas barrier property.
- Patent Document 4 discloses a method of introducing an undercoat layer on the polymer substrate and introducing highly reactive nucleophilic groups at a high density. However, since this method is performed off-line, there is a possibility that a functional group having a high surface reactivity reacts with a substance in the atmosphere and deactivates, and the surface of the undercoat layer may be contaminated.
- the present invention has been made in view of such circumstances, and an object thereof is to provide a laminate having a high gas barrier property.
- the laminate according to the first aspect of the present invention is a film-like or film-like material containing a substrate having a surface and an organic polymer having an OH group formed on at least a part of the surface of the substrate.
- the organic polymer may be a copolymer of poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate.
- the copolymer may be a copolymer containing poly (2-hydroxyethyl methacrylate) in a proportion of 15 mol% to 50 mol% in the copolymer.
- a part of OH groups in the poly (2-hydroxyethyl methacrylate) may be crosslinked to form a three-dimensional network structure.
- the laminate according to the second aspect of the present invention is a film-like or film-like film formed on at least a part of the polymer substrate having a surface and on the surface of the polymer substrate, and containing an organic polymer.
- An undercoat layer formed to cover the surface of the undercoat layer, comprising a nucleophilic functional group, an element ratio O / C of oxygen element O and carbon element C, and nitrogen element N and carbon element C
- the undercoat layer may have an element or a functional group containing an unshared electron pair.
- the film thickness of the adhesion layer may be 0.1 nm or more and 100 nm or less.
- the film thickness of the undercoat layer may be 100 nm or more and 100 ⁇ m or less.
- the film thickness of the atomic deposition film may be 2 nm or more and 50 nm or less.
- the atomic layer deposition film may contain at least one of Al or Si.
- the atomic deposition film may include Ti on the surface in contact with the adhesion layer.
- the gas barrier film according to the third aspect of the present invention includes the laminate of the above aspect formed in a film shape.
- the manufacturing method of the laminated body which concerns on the 4th aspect of this invention prepares a base material, At least one part of the surface of the said base material is a film-form or film-form containing the organic polymer which has a functional group
- An undercoat layer is formed, a part of the exposed surface of the undercoat layer is surface-treated, a functional group of the organic polymer is densified, and a precursor that becomes an atomic layer deposition film is formed on the undercoat layer.
- a precursor raw material is supplied on the exposed surface so as to be bonded to the OH group and the densified functional group of the organic polymer contained therein, and is bonded to the undercoat layer of the precursor raw material. Excess precursor material that was not present is removed, and the amount of the precursor bonded to the organic polymer OH group and the densified functional group of the organic polymer is saturated to form an atomic layer deposition film. .
- a base material is prepared, and at least part of the surface of the base material is a film or film containing an organic polymer having a functional group.
- An undercoat layer is formed, and at least a part of the exposed surface of the undercoat layer is surface-treated to form an adhesion layer having a nucleophilic functional group on the undercoat layer, thereby forming an atomic layer deposition film.
- a precursor raw material is supplied onto the surface of the adhesion layer so that the precursor is bonded to a functional group of the undercoat layer or a nucleophilic functional group of the adhesion layer, and the undercoat of the precursor raw materials Excess precursor raw material not bonded to the layer and the adhesion layer is removed, and the amount of the precursor bonded to the functional group of the undercoat layer or the nucleophilic functional group of the adhesion layer is saturated, Shape layer deposited film To.
- the laminate produced by the laminate production method of the above aspect is formed into a film.
- the adsorption site of the precursor can be arranged with high density by the undercoat layer containing the organic polymer having an OH group, and the two-dimensional Atomic layer growth close to growth is possible.
- an undercoat layer having a highly reactive functional group, and an adhesion layer having more highly reactive functional groups can be grown in an atomic layer close to two-dimensional growth.
- the two-dimensional atomic layer deposition film is a film in which atoms are closely bonded in the plane direction, there are few gaps through which gas permeates in the film thickness direction. Therefore, the gas barrier property of a laminated body or a gas barrier film can be made higher.
- FIG. 1 is a cross-sectional view showing a configuration of a laminate according to an embodiment of the present invention.
- the laminate 1 includes a base material 4 formed of a polymer material and a film-like or film-like undercoat layer (hereinafter referred to as “UC layer”) formed on the surface of the base material 4.
- UC layer film-like or film-like undercoat layer
- the UC layer 3 contains an organic polymer having an OH group, and secures an adsorption site for the ALD film 2. That is, the organic polymer contained in the UC layer 3 has a functional group that can easily adsorb the precursor of the ALD film 2. Accordingly, the ALD film 2 is formed in a film shape so as to cover the UC layer 3 by binding the precursor as the raw material of the ALD film 2 to the OH group of the organic polymer contained in the UC layer 3.
- the substrate 4 made of a polymer material will be described.
- 2A and 2B are diagrams showing chemical formulas of functional groups of the polymer material constituting the substrate 4.
- the initial growth of the ALD film amount (that is, the precursor Adsorption rate) is slower than Al 2 O 3 (alumina).
- the precursor is difficult to adsorb because the functional group is a methyl group. Therefore, PP is not preferred as the polymer material used for the substrate.
- PET polyethylene terephthalate
- the initial growth of the film formation amount of the ALD film that is, the adsorption rate of the precursor
- Al 2 O 3 alumina
- PET is preferred as the polymer material used for the substrate.
- the substrate 4 PET having an ester group that is easily adsorbed by the precursor. That is, the polarity of the functional group and the presence / absence of atoms that donate electrons greatly influence the adsorption rate of the precursor. Therefore, when a polymer material such as PP is used for the substrate 4, it is difficult to form the ALD film 2 directly on the substrate 4. Therefore, in that case, it is preferable to provide the UC layer 3 on the substrate 4 and provide the ALD film 2 thereon.
- the material of the base material 4 is polyethylene (PE), polypropylene (PP), or polystyrene (PS).
- a hydrocarbon-only polymer material such as may be used.
- a polymer material containing O atoms such as polyethylene terephthalate (PET), N atoms such as nylon, or S atoms such as polyether sulfone is used. May be.
- FIG. 3 is a diagram showing a structural formula of an organic polymer having an OH group.
- PVA polyvinyl alcohol
- the initial growth of the ALD film deposition amount that is, the precursor adsorption rate
- the functional group is a hydroxyl group, so the precursor is slightly adsorbed. Therefore, PVA is preferable as an organic polymer material used for the UC layer 3.
- Examples of the organic polymer having an OH group preferable as the UC layer 3 include a phenol resin and a polysaccharide in addition to the polyvinyl alcohol shown in FIG.
- Specific examples of the polysaccharide include cellulose derivatives such as cellulose, hydroxymethyl cellulose, hydroxyethyl cellulose, and carboxymethyl cellulose, chitin, and chitosan.
- a copolymer of the organic polymer and another organic polymer, or a hybrid material of the organic polymer and an inorganic substance may be used as a material of the UC layer 3.
- Other materials for the UC layer 3 include OH group-containing epoxy resins and acrylic resins, among which a copolymer of poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate. It is more preferable to use At this time, when poly (2-hydroxyethyl methacrylate) is contained in the copolymer in a proportion of 15 mol% or more and 50 mol% or less, the amount of adsorption sites is sufficient and various solvents are used. Can be applied.
- the organic polymer having an OH group contained in the UC layer 3 is crosslinked in the molecule.
- the material that crosslinks the inside of an organic polymer molecule having an OH group include organic polymers containing an NCO group such as Sumidur N3300 (manufactured by Sumika Bayer Urethane Co., Ltd.).
- an organic polymer containing an NCO group By adding an organic polymer containing an NCO group, the NCO group and at least a part of the OH groups in the UC layer 3 react to cause an intermolecular crosslinking reaction.
- the wet heat resistance of the laminate 1 is improved.
- the ALD film 2 is formed of an inorganic oxide film such as AlO x , TiO x , SiO x , ZnO x , or SnO x , a nitride film or oxynitride film made of these inorganic materials, or an oxide film, nitride film made of other elements, or An oxynitride film may be used. Further, the ALD film 2 may be the above film or a mixed film of elements.
- the precursor which is the raw material of the ALD film 2
- the precursor which is the raw material of the ALD film 2
- the precursor can be arranged with high density at the adsorption site of the UC layer 3, and the ALD film 2 close to two-dimensional growth can be obtained.
- Atomic layer growth is possible.
- the two-dimensional ALD film 2 is a film in which atoms are closely bonded in the plane direction. Therefore, there are few gaps through which gas permeates in the film thickness direction, and the gas barrier property can be further enhanced. Therefore, it can use as a gas barrier film by forming the laminated body 1 in a film form.
- the manufacturing method of the laminated body which concerns on 1st Embodiment of this invention is demonstrated.
- the base material 4 made of a polymer material is placed in the vacuum chamber of the ALD apparatus (first step).
- a film-like or film-like UC layer 3 containing an organic polymer having an OH group is formed on at least a part of the outer surface (surface) of the substrate 4 (second step).
- second step Next, of both surfaces in the thickness direction of the UC layer 3 formed in the second step, a part of the surface opposite to the surface in contact with the base material 4 (exposed surface of the UC layer 3) is subjected to surface treatment.
- the functional groups of the organic polymer contained in the layer 3 are densified (third step).
- the precursor which is the raw material of the atomic layer deposition film is bonded to the OH group of the organic polymer contained in the UC layer 3 and the functional group of the organic polymer densified in the third step.
- the precursor raw material is supplied onto the surface opposite to the surface in contact with the substrate 4 (exposed surface of the UC layer 3) among both surfaces in the thickness direction of the UC layer 3 (fourth step).
- the excess precursor raw material that was not bonded is removed, and the precursor bonded to the OH group of the organic polymer and the functional group of the organic polymer densified in the third step The amount of bonds is saturated to form an atomic layer deposition film (fifth step).
- the method for forming the UC layer 3 is not particularly limited, and an appropriate coating technique such as a spin coating method, a roll coating method, or a bar coating method can be used.
- plasma treatment plasma etching
- alkali treatment alkali treatment
- the like can be given as a method for surface treating a part of the UC layer 3.
- OH groups and COOH groups appear on a part of the surface of the UC layer 3, and the functional groups are densified.
- the density at which the precursor, which is the raw material of the ALD film 3 formed in the fourth step and the fifth step, crosslinks to the functional group of the UC layer is increased.
- the gas barrier property can be further enhanced.
- an atomic layer deposition method (ALD method) is used as a method for forming the ALD film 3.
- a precursor raw material raw material gas
- a purge gas is supplied to remove excess precursor material.
- the step of supplying the precursor raw material and the step of exhausting and removing the excess precursor raw material are repeated to saturate the bonding amount of the precursor to the OH group and the functional group of the organic polymer, whereby the ALD film 3 Form.
- the number of times of supply and exhaust of the precursor raw material is preferably 1 or more and 30 or less.
- the laminate according to the second embodiment of the present invention has an undercoat layer and an adhesion layer between the base material and the atomic layer deposition film.
- This undercoat layer is a layer containing an organic polymer, and the organic polymer has a binding site to which the precursor of the atomic layer deposition film is bonded. That is, the organic polymer contained in the undercoat layer has a large number of functional groups as bonding sites that are easily bonded to the precursor of the atomic layer deposition film.
- the adhesion layer is a layer provided on the surface layer of the undercoat layer, and has a larger number of functional groups as bonding sites that are easily bonded to the precursor of the atomic layer deposition film. Accordingly, the precursors bonded to the functional groups of the undercoat layer or the adhesion layer are bonded so as to be cross-linked with each other. As a result, a two-dimensional atomic layer deposition film growing in the surface direction of the adhesion layer is formed. As a result, a gap through which gas permeates in the film thickness direction of the laminate is less likely to be generated, and a laminate having a high gas barrier property can be realized.
- an inorganic substance may be dispersed in the undercoat layer. That is, by adding an inorganic substance to the undercoat layer, the adsorption density of the precursor of the atomic layer deposition film can be further improved.
- Laminates with atomic layer deposition films manufactured by atomic layer deposition are commercially produced as electronic component substrates such as thin-film wireless EL, displays, and semiconductor memory (DRAM), such as glass substrates and silicon substrates.
- ALD atomic layer deposition
- the base material of the laminate that is the object of the second embodiment is a polymer base material having flexibility.
- the ALD process for polymer substrates has not been studied in detail. Therefore, in this study, it was assumed that an atomic layer deposition film grows on the polymer substrate in the same manner as the electronic component substrate. Then, while considering the growth process of the atomic layer deposition film on the polymer substrate, the approach to the laminate of the second embodiment was tried.
- an atomic layer deposition film on an electronic component substrate is considered to grow two-dimensionally, but in reality, an atomic layer deposition film on a polymer substrate (for example, PET: polyethylene terephthalate) grows two-dimensionally. Not done.
- a polymer substrate for example, PET: polyethylene terephthalate
- the main cause is considered to be “adsorption site density” and “adsorption site arrangement” on the polymer substrate. For these reasons, the performance of the atomic layer deposition film is not sufficiently exhibited at a thin film thickness.
- the atomic layer deposition film needs to have a film thickness of 2 nm or more or the number of atomic layers of 20 or more. Further, when the polymer base material has a columnar structure, gas permeation occurs from the boundary portion of the columnar structure, so that a complete gas barrier cannot be realized.
- the density of the adsorption sites of the precursor in the atomic layer deposition film which is the first cause, is considered as follows. That is, a metal-containing precursor such as a gaseous precursor (TMA: Tri-Methyl Aluminum) or TiCL 4 may be chemically adsorbed on the surface of a polymer substrate (hereinafter sometimes simply referred to as a substrate). This is the first step of the ALD process. At this time, the reactivity of the functional group of the precursor and the substrate and the density of the functional group greatly influence the chemical adsorption.
- TMA Tri-Methyl Aluminum
- the precursor in the atomic layer deposition film is adsorbed on the adsorption site reversibly.
- the precursor of the atomic layer deposition film can be adsorbed to functional groups such as OH and COOH groups of the polymer chain, but is difficult to adsorb to nonpolar functional groups such as alkyl groups.
- the respective adsorption sites of the precursor are arranged in an isolated state.
- the atomic layer deposition film grows three-dimensionally with the adsorption sites as nuclei. That is, if the density of the adsorption sites is low, the atomic layer deposition film spreads three-dimensionally for the precursor, and the precursor is sparsely adsorbed at locations such as OH. Therefore, the atomic layer deposition film grows in a columnar shape around the isolated nucleus.
- adsorption sites that is, the diffusion of the precursor
- a polymer film is a mixture of a crystalline region and an amorphous region. Therefore, in the non-crystalline region, there is a space where a polymer chain called free volume (free volume) does not exist, and gas diffuses and permeates through the space. The gaseous precursor also passes through the free volume space until it is adsorbed on the adsorption site.
- the precursor diffuses from the surface of the polymer substrate to the inside and is adsorbed on the adsorption sites of functional groups scattered three-dimensionally.
- the adsorption site becomes the nucleus of the atomic layer deposition film. Since these nuclei are scattered three-dimensionally, a three-dimensional growth mode is established until a certain nuclei comes into contact with the adjacent nuclei to form a continuous film. Therefore, since the period until the atomic layer deposition film becomes a continuous film and the formation of a dense film by two-dimensional growth is started is long, the dense portion of the atomic layer deposition film in two-dimensional growth is reduced. Therefore, gas passes through the gaps in the atomic layer deposition film. Furthermore, the gas passes through the free volume space. Therefore, the laminated body cannot obtain a high gas barrier property.
- an undercoat layer containing an organic polymer is provided on the polymer substrate, and an adhesion layer having more adsorption sites is provided on the undercoat layer. That is, an undercoat layer containing an organic polymer on the polymer substrate before the ALD process in order to arrange the precursor adsorption sites at a high density two-dimensionally on the surface of the polymer substrate. And an adhesion layer is provided on the surface of the undercoat layer.
- an inorganic substance may be added to the undercoat layer.
- FIG. 4 is a cross-sectional view showing the configuration of the laminate 11 according to the second embodiment of the present invention.
- the laminate 11 includes a base material (polymer base material) 14 formed of a polymer material, and a film-like or film-like undercoat layer (hereinafter referred to as a film-like film) formed on the surface of the base material 14.
- UC layer 13
- adhesion layer 15 formed on the surface (exposed surface) of UC layer 13
- ALD film atomic layer deposition film
- the UC layer 13 contains an organic polymer material and has an adsorption site for the precursor of the ALD film 12.
- the adhesion layer 15 is substantially the same compound as the UC layer 13, but of the element ratio O / C between the oxygen element O and the carbon element C and the element ratio N / C between the nitrogen element N and the carbon element C. At least one of them is larger than the UC layer 13, and more adsorption sites of the ALD film 12 are secured than the UC layer 13.
- the compound constituting the adhesion layer 15 has many functional groups that can easily adsorb the precursor of the ALD film 12. Accordingly, the precursor that is the raw material of the ALD film 12 is bonded to the functional group containing the O element or the N element contained in the adhesion layer 15, so that the ALD film 12 forms the UC layer 13 via the adhesion layer 15. It is formed in a film shape so as to cover it.
- the ALD film 12 can be formed densely by forming the UC layer 13 and the adhesion layer 15. Therefore, a hydrocarbon-only polymer material such as polyethylene (PE), polypropylene (PP) having a poorly nucleophilic methyl group (see FIG. 2A), and polystyrene (PS) may be used.
- a hydrocarbon-only polymer material such as polyethylene (PE), polypropylene (PP) having a poorly nucleophilic methyl group (see FIG. 2A), and polystyrene (PS) may be used.
- O atoms such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) having a nucleophilic ester group (see FIG. 2B)
- N atoms such as nylon and polyimide (PI)
- polymeric materials containing S atoms, such as polyethersulfone such as polyethersulfone.
- the film thickness of the substrate 14 is not particularly limited as long as it can be used as a barrier film. Specifically, the film thickness of the substrate 14 is preferably in the range of 12 to 300 ⁇ m, for example, and more preferably in the range of 50 to 100 ⁇ m.
- the UC layer 13 is preferably an organic polymer.
- an inorganic substance or a hybrid material of an organic polymer and an inorganic substance may be used.
- Preferred organic polymers for the UC layer 13 include, for example, polyvinyl alcohol having an OH group, organic polymers such as a phenol resin, and polysaccharides.
- the UC layer 13 preferably has an element or a functional group containing an unshared electron pair.
- the functional group of the organic polymer contained in the UC layer 13 preferably has one of O atoms and N atoms. Examples of the functional group having an O atom include OH group, COOH group, COOR group, COR group, NCO group, and SO 3 group. Examples of the functional group having an N atom include an NH x group (X is an integer).
- the functional group of the organic polymer contained in the UC layer contains an atom having an unshared electron pair or an unpaired electron (dangling bond), and a coordinate bond with a precursor, intermolecular force (van der Waals) It may be a functional group that interacts such as bonding by force) or hydrogen bonding.
- an undercoat having a functional group with a desired density by surface treatment of the organic polymer surface by plasma etching or hydrolysis treatment to increase the density of functional groups of the organic polymer.
- an organic polymer having an aromatic ring such as polyphenylsulfone (PPS) is preferable.
- PPS polyphenylsulfone
- the organic polymer having an OH group specifically, for example, an epoxy resin or an acrylic resin is preferable, and among them, poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate are preferable. More preferably, a copolymer (see FIG. 5) is used. At this time, if poly (2-hydroxyethyl methacrylate) is contained in the copolymer in a proportion of 15 mol% or more and 50 mol% or less, the amount of adsorption sites is sufficient, and coating with various solvents is performed. It is preferable because it can be worked.
- an epoxy resin or an acrylic resin is preferable, and among them, poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate are preferable. More preferably, a copolymer (see FIG. 5) is used. At this time, if poly (2-hydroxyethyl methacrylate) is contained in the copolymer in a proportion of 15 mol% or more and 50 mol% or less,
- polysaccharides include cellulose derivatives such as cellulose, hydroxymethyl cellulose, hydroxyethyl cellulose, carboxymethyl cellulose, chitin, and chitosan.
- the UC layer 13 for example, an organic polymer having a COOH group, an ester bond, an N atom, or an S atom that is a nucleophilic functional group may be used. Furthermore, as the UC layer 13, a copolymer of an organic polymer and another organic polymer, or a hybrid material of an organic polymer and an inorganic substance may be used.
- the thickness of the UC layer 13 is not particularly limited, but is preferably 100 nm or more and 100 ⁇ m or less. If the film thickness of the UC layer 13 is less than 100 nm, it is not preferable because a portion where the UC layer cannot be formed due to coating unevenness or the like occurs. On the other hand, when the film thickness exceeds 100 ⁇ m, the base material is distorted due to the shrinkage of the UC layer 13, which is not preferable. On the other hand, when the film thickness of the UC layer 13 is within the above range, the UC layer can be applied uniformly, which is preferable because the influence of shrinkage can be suppressed.
- Organic polymer used for UC layer 13 Next, the organic polymer used for the UC layer 13 will be described.
- Organic polymers are classified into water-based and solvent-based depending on the solvent used.
- examples of the water-based organic polymer include polyvinyl alcohol and polyethyleneimine.
- examples of the solvent-based organic polymer include acrylic ester, polyester acrylic, and polyether acrylic.
- organic polymer used for the UC layer 13 Preferred materials for the organic polymer of O-atom-containing resin include a hydroxyl alcohol (OH) -containing resin such as polyvinyl alcohol, phenol resin, and polysaccharide.
- the polysaccharide includes cellulose derivatives such as cellulose, hydroxymethylcellulose, hydroxyethylcellulose, and carboxymethylcellulose, chitin, chitosan, and the like.
- a carboxy vinyl polymer which is a carbonyl group (COOH) containing resin etc. is mentioned as a preferable material as an organic polymer of O atom containing resin.
- organic polymer of the O atom-containing resin examples include a ketone group (CO) -containing resin such as polyketone, polyether ketone, polyether ether ketone, and aliphatic polyketone.
- organic polymers of O atom-containing resins include polyester resins that are ester group (COO) -containing resins, polycarbonate resins, liquid crystal polymers, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate. (PEN), boribylene naphthalate (PBN), polytrimethylene terephthalate (PTT), and the like.
- an epoxy resin or an acrylic resin containing the above functional group may be used.
- organic polymer of N-atom-containing resin examples include polyimide, polyetherimide, alicyclic polyimide, and solvent-soluble polyimide that are imide group (CONHCO) -containing resins. Can be mentioned.
- the aromatic polyimide which comprises an alicyclic polyimide is normally obtained from aromatic tetracarboxylic dianhydride and aromatic diamine.
- alicyclic polyimides obtained from these materials are not transparent. Therefore, it is also possible to replace the acid dianhydride and diamine of the above materials with aliphatic or alicyclic for the transparency of the polyimide.
- Examples of the alicyclic carboxylic acid include 1,2,4,5-cyclohexanetetracarboxylic acid and 1,2,4,5-cyclopentanetetracarboxylic dianhydride.
- examples of the solvent-soluble polyimide include ⁇ -ptyrolactone, N, N-dimethylacetamide, and N-methyl-2-pyrrolidone.
- Organic Polymer of S Atom-Containing Resin Materials that can be used as the organic polymer of S atom-containing resin include polyether sulphone (PES), polysulphone (PSF), and polyphenyl sulphone (resin containing sulfonyl group (SO 2 )) PPS).
- PES and PSF are materials having high heat resistance.
- a polymer alloy, a polybutylene terephthalate polymer alloy, a polyphenylene sulfide polymer alloy, and the like can be used as the organic polymer. If necessary, the above polymer may be combined with a polymer alloy (alloy, blend, composite).
- an inorganic substance inorganic compound
- the adsorption density of the precursor of the ALD film is further improved. Therefore, the inorganic substance added to the UC layer 13 will be described in detail.
- an inorganic substance added to the UC layer 13 there is a metal alkoxide (a precursor of an inorganic compound), and the metal alkoxide is represented by a general formula R1 (M-OR2).
- Rl and R2 are organic groups having 1 to 8 carbon atoms, and M is a metal atom.
- the metal atom M is Si, Ti, Al, Zr, or the like.
- the material represented by Rl is tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraptoxysilane, methyltrimethoxysilane, methyltriethoxysilane, dimethyl Examples include dimethoxysilane and dimethyldiethoxysilane.
- examples of the material represented by R1 include tetramethoxyzirconium, tetraethoxyzirconium, tetraisopropoxyzirconium, and tetraptoxyzirconium.
- examples of the material represented by Rl include tetramethoxytitanium, tetraethoxytitanium, tetraisopropoxytitanium, and tetrapoxytitanium.
- examples of the material represented by Rl include tetramethoxyaluminum, tetraethoxyaluminum, tetraisopropoxyaluminum, and tetraptoxyaluminum.
- the adhesion layer 15 is a layer made of an organic polymer provided on the surface of the UC layer 13 (in other words, between the UC layer 13 and the ALD film 12).
- organic polymer functional groups that is, nucleophilic functional groups such as OH groups and COOH groups contained in the UC layer 13 have a higher density than the UC layer 13. Is provided in order to increase the density at which the precursor, which is a raw material, is cross-linked to functional groups.
- the adhesion layer 15 has at least one of the element ratio O / C of the oxygen element O in the film to the carbon element C or the element ratio N / C of the nitrogen element N in the film to the carbon element C in the UC.
- the surface layer portion is larger than the inside of the layer 13.
- the element ratio of the adhesion layer 15 and the UC layer 13 can be obtained by measuring the peak intensity using X-ray photoelectron spectroscopy (for example, manufactured by JEOL Ltd.) and calculating the ratio of the peak heights. That is, the interface between the adhesion layer 15 and the UC layer 13 can be identified from the element ratio of the adhesion layer 15 and the UC layer 13.
- the element ratio O / C when used, a region in which the element ratio O / C is in the range of 0.45 or more and 0.85 or less from the surface layer portion of the adhesion layer 15 toward the film thickness direction. It is preferable that Further, when the element ratio O / C is obtained in the film thickness direction from the bottom surface of the UC layer 13 toward the surface layer portion, the element ratio O / C increases by 0.1 or more with respect to the bottom surface of the UC layer 13.
- the region is preferably the interface between the adhesion layer 15 and the UC layer 13.
- the adhesion layer 15 when the element ratio N / C is used, a region in which the element ratio N / C is in the range of 0.01 to 0.20 in the film thickness direction from the surface layer portion of the adhesion layer 15 is defined as the adhesion layer 15. Is preferred. Further, when the element ratio N / C is obtained in the film thickness direction from the bottom surface of the UC layer 13 toward the surface layer portion, the region where the element ratio N / C increases by 0.02 or more is defined as the adhesion layer 15 and the UC layer. 13 is preferable.
- the laminated body 11 after manufacture it does not specifically limit as a method of confirming the interface of the contact
- the thickness of the adhesion layer 15 is not particularly limited, but is preferably 0.1 nm or more and 100 nm or less, more preferably 0.3 nm or more and 30 nm or less, and 0.5 nm or more and 10 nm or less. Further preferred.
- the film thickness of the adhesion layer 15 is less than 0.1 nm, the nucleophilic functional group is not more than one atomic layer, which is not preferable.
- the film thickness exceeds 100 nm, the organic polymer on the surface layer of the UC layer 13 is depolymerized by a long-time treatment, which is not preferable.
- it is preferable that the film thickness of the adhesion layer 15 is in the above range because it has sufficient nucleophilic functional groups and has durability.
- ALD film Specifically, as the ALD film 12, for example, inorganic oxide films such as AlO x , TiO x , SiO x , ZnO x , SnO x , nitride films made of these inorganic substances, oxynitride films, and other elements And an oxide film, a nitride film, and an oxynitride film.
- the ALD film 12 preferably contains Al, Si, or Ti. Further, the ALD film 12 may be the above film or a mixed film of elements.
- the thickness of the ALD film 12 is not particularly limited, but is preferably 2 nm or more and 50 nm or less.
- the WVTR is about 10 ⁇ 1 , and the target barrier property of 10 ⁇ 3 or less cannot be obtained.
- the film thickness exceeds 50 nm it is not preferable because it takes cost and time.
- the film thickness of the ALD film 12 be in the above range because it can have a sufficient water vapor barrier property in a short time.
- the manufacturing method of the laminated body 11 concerning 2nd Embodiment of this invention laminates
- the precursor of the atomic layer deposition film is bonded to the functional group of the organic polymer contained in the UC layer 13 or the nucleophilic functional group of the adhesive layer 15.
- a precursor raw material is supplied onto the surface (fourth step).
- the method for forming the UC layer 13 is not particularly limited, and an appropriate coating technique such as a spin coating method, a roll coating method, or a bar coating method can be used.
- plasma treatment plasma etching
- corona treatment corona treatment
- alkali treatment and the like can be given as a method for treating a part of the surface of the UC layer 13.
- an adhesion layer 15 containing a nucleophilic functional group such as an OH group or a COOH group appears on part of the surface of the UC layer 13.
- the density at which the precursor, which is the raw material of the ALD film 12 formed in the fourth step and the fifth step, crosslinks to the functional group of the adhesion layer 15 or the UC layer 13 is increased.
- the gas barrier property of the stacked body 11 is improved. It can be made even higher.
- an atomic layer deposition method (ALD method) is used as a method for forming the ALD film 12.
- a precursor raw material raw material gas
- a purge gas is supplied to remove excess precursor material. It is thought that the precursor material is not bonded to some of the nucleophilic functional groups such as OH groups and COOH groups that can be reacted by supplying and removing the precursor raw material only once. Accordingly, the step of supplying the precursor raw material and the step of exhausting and removing the excess precursor raw material are repeated to saturate the bonding amount of the precursor to the nucleophilic functional group of the organic polymer, thereby obtaining an ALD film. 12 is formed.
- the number of times of supply and exhaust of the precursor raw material is preferably 1 or more and 30 or less.
- the gas barrier film which concerns on embodiment of this invention contains the laminated body 11 of the said aspect formed in the film form. Therefore, a dense film structure with a high gas barrier property can be obtained in the same manner as the laminate 11 described above.
- the manufacturing method of the gas barrier film which concerns on this embodiment forms the laminated body 11 manufactured by the manufacturing method of the laminated body 11 mentioned above in a film form.
- the laminate 11 of this embodiment has a structure in which the adhesion layer 15 in which functional groups such as C—OH groups and COOH groups are densified is provided on the surface layer of the UC layer 13. .
- the density at which the precursor of the ALD film crosslinks to the functional group of the adhesion layer 15 is increased, so that the gas barrier property of the stacked body 11 is further improved.
- the adhesion layer 15 having a higher functional group density between the ALD film 12 and the UC layer 13 the density of adsorption sites to which the precursor of the ALD film can bind increases. Therefore, according to the laminate 11 of this embodiment, the ALD film can be grown two-dimensionally to obtain a dense film structure with high gas barrier properties.
- the precursor that is the raw material of the ALD film 12 can be arranged at a high density at the adsorption site of the adhesion layer 15, and atomic layer growth close to two-dimensional growth is possible.
- the two-dimensionally grown ALD film 12 is a film in which atoms are closely bonded in the plane direction. Therefore, there are few gaps through which gas permeates in the film thickness direction, and the gas barrier property can be further enhanced. Therefore, it can be formed into a film and used as a gas barrier film.
- PET polyethylene terephthalate
- plane surface an untreated surface
- wire bar Apply a coating solution to the plain surface of a base material made of a polypropylene (PP) film (Mitsui Chemicals Tosero) with a thickness of 70 ⁇ m, and laminate a UC layer with a thickness of 0.34 ⁇ m after drying. did.
- PP polypropylene
- a copolymer of poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate, and poly (2-hydroxyethyl methacrylate) is a copolymer.
- the organic polymer contained in the polymer in a proportion of 35 mol% was dissolved in a mixed solution of methyl ethyl ketone and cyclohexanone.
- Sumidur N3300 manufactured by Sumitomo Bayer Urethane Co., Ltd. was added to the mixed solution to prepare a coating solution.
- the coating liquid was applied to the substrate using a wire bar and dried at 90 ° C. for 1 minute.
- the substrate coated with the coating solution was heated at 60 ° C. for 48 hours.
- the UC layer having the chemical formula shown in FIG. 6 is formed on the base material by reacting the NCO group of the isocyanate curing agent N3300 with at least a part of the OH groups in poly (2-hydroxyethyl methacrylate). Formed.
- Al 2 O 3 film was formed on the upper surface of the UC layer by an atomic layer deposition method (ALD method).
- the source gas was trimethylaluminum (TMA).
- TMA trimethylaluminum
- N 2 and O 2 were supplied as purge gases simultaneously with the raw material gas.
- step of supplying the source gas to the film forming chamber and the step of exhausting and removing the excess precursor were repeated.
- O 2 was supplied as a reaction gas and a discharge gas to the film forming chambers.
- the treatment pressure at that time was 10 to 50 Pa.
- a plasma gas excitation power source was a 13.56 MHz power source, and plasma discharge was performed in an ICP (Inductively Coupled Plasma) mode.
- the supply time of each gas was 60 msec for TMA and process gas, 10 sec for purge gas, and 10 sec for reactive gas and discharge gas. Then, the plasma discharge was generated in the ICP mode at the same time as the reaction gas / discharge gas was supplied to the film formation chamber. At this time, the output power source of plasma discharge was 250 Watt. Further, as gas purge after plasma discharge, purge gases O 2 and N 2 were supplied to the film forming chamber for 10 seconds. The film forming temperature at this time was 90 ° C.
- the deposition rate of Al 2 O 3 under the above cycle conditions was as follows. That is, since the unit film formation rate is 1.4 to 1.5 liters / cycle, when the film formation process of 15 cycles was performed to form a film with a thickness of 2 nm, the total film formation time was about 1 It was time.
- the film thickness of the ALD film was set to 2 nm. By setting the thickness of the ALD film to 2 nm, it is easy to compare the initial growth of the ALD film, which is greatly influenced by the UC layer.
- FIG. 7 is a diagram comparing the water vapor transmission rate of the laminate of this example and the laminate of the comparative example.
- Example 1 a 2 nm Al 2 O 3 film was formed on the UC layer on the PET film substrate by the ALD method. The number of times of supply and exhaust of the precursor was one. The sample of the laminate thus produced was measured for water vapor transmission rate (WVTR). The measured value of WVTR at this time was 4.65 [g / m 2 / day].
- Example 2 a 2 nm Al 2 O 3 film was formed on the UC layer on the PET film substrate by the ALD method. The number of times of supply and exhaust of the precursor was 5 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 2.27 [g / m 2 / day].
- Example 3 a 2 nm Al 2 O 3 film was formed on the UC layer on the PET film substrate by the ALD method. The number of times of supply and exhaust of the precursor was 10 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 1.25 [g / m 2 / day].
- Example 4 a 2 nm Al 2 O 3 film was formed on the UC layer on the PET film substrate by the ALD method. The number of times of supply and exhaust of the precursor was 15 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 1.24 [g / m 2 / day].
- Example 5 Plasma discharge was generated in the ICP mode before forming the Al 2 O 3 film on the UC layer on the PET film substrate. At this time, the output power source of plasma discharge was 250 Watt. Further, as gas purge after plasma discharge, purge gases O 2 and N 2 were supplied for 10 seconds.
- Example 6 a 2 nm Al 2 O 3 film was formed on the UC layer on the PP film substrate by the ALD method. The number of times of supply and exhaust of the precursor was 5 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 2.18 [g / m 2 / day].
- Example 7 a 2 nm Al 2 O 3 film was formed on the UC layer on the PP film substrate by ALD. The number of times of supply and exhaust of the precursor was 10 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 1.29 [g / m 2 / day].
- Example 8 a 2 nm Al 2 O 3 film was formed on the UC layer on the PP film substrate by ALD. The number of times of supply and exhaust of the precursor was 15 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 1.27 [g / m 2 / day].
- Example 9 a 20 nm Al 2 O 3 film was formed on the UC layer on the PET film substrate by the ALD method. The number of times of supply and exhaust of the precursor was one. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 1.0 ⁇ 10 ⁇ 3 [g / m 2 / day].
- Comparative Example 1 a polypropylene (PP) film (manufactured by Mitsui Chemicals, Inc., film thickness 70 ⁇ m) was regarded as a base material and a UC layer, and used as an example of a UC layer having no OH group. Then, WVTR was measured without forming an Al 2 O 3 film on this substrate. The measured value of WVTR at this time was 4.84 [g / m 2 / day].
- PP polypropylene
- Comparative Example 2 In Comparative Example 2, as in Comparative Example 1, the PP film was regarded as a base material and a UC layer, and was used as a UC layer having no OH group. Then, an Al 2 O 3 film having a thickness of 2 nm was formed on the plane surface side of the base material by the ALD method. The number of times of supply and exhaust of the precursor was 5 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 3.24 [g / m 2 / day].
- Comparative Example 3 In Comparative Example 3, as in Comparative Example 1, the PP film was regarded as a base material and a UC layer, and was used as a UC layer having no OH group. Then, an Al 2 O 3 film having a thickness of 2 nm was formed on the plane surface side of the base material by the ALD method. The number of times of supply and exhaust of the precursor was 10 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 2.12 [g / m 2 / day].
- Comparative Example 4 In Comparative Example 4, as in Comparative Example 1, the PP film was regarded as a base material and a UC layer and used as a UC layer having no OH group. Then, an Al 2 O 3 film having a thickness of 2 nm was formed on the plane surface side of the base material by the ALD method. The number of times of supply and exhaust of the precursor was 15 times. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 2.02 [g / m 2 / day].
- Comparative Example 5 In Comparative Example 5, as in Comparative Example 1, the PP film was regarded as a base material and a UC layer and used as a UC layer having no OH group. Then it was formed an Al 2 O 3 film of 20nm by ALD on plane surface of the substrate. The number of times of supply and exhaust of the precursor was one. WVTR was measured for the laminate sample thus produced. The measured value of WVTR at this time was 0.30 [g / m 2 / day].
- Example 1 to 8 and Comparative Examples 2 to 4 in which a 2 nm Al 2 O 3 film was formed and Comparative Example 1 in which no Al 2 O 3 film was formed are shown in Table 1, and 20 nm Al 2 O 3 Table 2 summarizes the contents of Example 9 and Comparative Example 5 in which films were formed.
- the laminate including the UC layer having the organic polymer containing the OH group has a lower WVTR and more effective in shielding the water vapor than the laminate including the UC layer not including the OH group. It was shown that.
- undercoat layer 100 ⁇ m thick polyethylene terephthalate (PET) film (“A-4100” manufactured by Toyobo Co., Ltd.) with one surface having an easy-adhesion treated surface and the other surface having an untreated surface (hereinafter referred to as “plain surface”)
- PET polyethylene terephthalate
- plain surface one surface having an easy-adhesion treated surface and the other surface having an untreated surface
- the preparation method of the coating liquid is, first, a copolymer of poly (2-hydroxyethyl methacrylate) and polymethyl methacrylate, where poly (2-hydroxyethyl methacrylate) is
- the organic polymer contained in the copolymer in a proportion of 35 mol% was dissolved in a mixed solution of methyl ethyl ketone and cyclohexanone. Thereafter, a coating solution was prepared.
- the coating liquid was applied to the substrate using a wire bar, and dried at 90 ° C. for 1 minute to form a UC layer on the substrate.
- either O 2 or N 2 was supplied as a reaction gas and discharge gas to the film formation chamber.
- the treatment pressure at that time was 10 to 50 Pa.
- the plasma gas excitation power source was a 13.56 MHz power source, and plasma discharge was performed for 60 seconds in an ICP (Inductively Coupled Plasma) mode. At this time, the output power source of plasma discharge was 250 Watt.
- purge gases O 2 and N 2 were supplied to the film forming chamber for 10 seconds.
- the reaction temperature at this time was 90 ° C.
- the peak intensities of C1s and O1s were compared using X-ray photoelectron spectroscopy (manufactured by JEOL). MgK ⁇ rays were used as the X-ray source, the residence time was 100 milliseconds, and the number of integrations was 5. Table 3 below is a table comparing the O / C peak height ratio of the laminate of this example and the laminate of the comparative example.
- Al 2 O 3 film was formed on the upper surface of the adhesion layer by an atomic layer deposition method (ALD method).
- the source gas was trimethylaluminum (TMA).
- TMA trimethylaluminum
- N 2 and O 2 were supplied as purge gases simultaneously with the raw material gas.
- step of supplying the source gas to the film forming chamber and the step of exhausting and removing the excess precursor were repeated.
- O 2 was supplied as a reaction gas and a discharge gas to the film forming chambers.
- the treatment pressure at that time was 10 to 50 Pa.
- a plasma gas excitation power source was a 13.56 MHz power source, and plasma discharge was performed in an ICP (Inductively Coupled Plasma) mode.
- the supply time of each gas was 60 msec for TMA and process gas, 10 sec for purge gas, and 10 sec for reactive gas and discharge gas. Then, the plasma discharge was generated in the ICP mode at the same time as the reaction gas / discharge gas was supplied to the film formation chamber. At this time, the output power source of plasma discharge was 250 Watt. Further, as gas purge after plasma discharge, purge gases O 2 and N 2 were supplied to the film formation chamber for 10 seconds. The film forming temperature at this time was 90 ° C.
- the deposition rate of Al 2 O 3 under the above cycle conditions was as follows. That is, since the unit film formation rate is 1.4 to 1.5 liters / cycle, when the film formation process of 15 cycles was performed to form a film with a thickness of 2 nm, the total film formation time was about 1 It was time.
- the thickness of the ALD film was set to 2 nm. By setting the thickness of the ALD film to 2 nm, it is easy to compare the initial growth of the ALD film, which is greatly influenced by the UC layer.
- Example 10 An adhesion layer was introduced by applying plasma treatment for 60 seconds while supplying O 2 on the UC layer.
- the element ratio of the adhesion layer surface at this time was measured by X-ray photoelectron spectroscopy.
- the laminate of the present invention can be used for electronic components such as electroluminescence elements (EL elements), liquid crystal displays, and semiconductor wafers, but it can also be effectively used for packaging films for pharmaceuticals and foods. Can do.
- EL elements electroluminescence elements
- liquid crystal displays liquid crystal displays
- semiconductor wafers semiconductor wafers
- Adhesion layer 1,11 ... Laminated body 2,12 ... Atomic layer deposition film (ALD film) 3,13 ... Undercoat layer (UC layer) 4,14 ... polymer substrate (substrate) 15 ... Adhesion layer
Abstract
Description
本願は、2013年3月27日に、日本に出願された特願2013-066165号、及び2013年12月25日に、日本に出願された特願2013-267184号に基づき優先権を主張し、その内容をここに援用する。
本発明の第一態様に係る積層体は、表面を有する基材と、前記基材の前記表面上の少なくとも一部に形成され、OH基を有する有機高分子を含有する膜状またはフィルム状のアンダーコート層と、前駆体を原料として形成され、前記アンダーコート層の露出面上を覆う膜状に形成された原子層堆積膜と、を備える。また、前記前駆体の少なくとも一部が、前記有機高分子の前記OH基に結合している。
また本発明の上記態様によれば、高分子を基材とした原子層堆積法においても、反応性の高い官能基を有するアンダーコート層と、反応性の高い官能基をさらに多く有する密着層とにより、原子層堆積膜は二次元成長に近い原子層成長が可能となる。
さらに本発明の上記態様によれば、二次元状の原子層堆積膜は、面方向に原子が密に結合した膜となっているので、膜厚方向にガスが透過するような隙間が少ない。そのため、積層体あるいはガスバリアフィルムのガスバリア性をより高くすることができる。
以下本発明の第1実施形態について説明する。
<第1実施形態に係る積層体の構成>
まず、本発明の第1実施形態にかかる積層体の構成について説明する。図1は、本発明の実施形態にかかる積層体の構成を示す断面図である。図1に示すように、積層体1は、高分子材料で形成された基材4と、基材4の表面に形成された膜状またはフィルム状のアンダーコート層(以下「UC層」という。)3と、UC層3の厚み方向の両面のうち基材4と接する面と反対側の面上(UC層3の表面上)に形成された原子層堆積膜(以下「ALD膜」という。)2とを備えている。なお、UC層3はOH基を有する有機高分子を含有していて、ALD膜2の吸着サイトを確保している。すなわち、UC層3に含有されている有機高分子は、ALD膜2の前駆体が吸着しやすい官能基を有している。したがって、ALD膜2の原料である前駆体が、UC層3に含有されている有機高分子のOH基に結合することにより、ALD膜2は、UC層3を覆うように膜状に形成される。
次に、本発明の第1の実施形態にかかる積層体の製造方法について説明する。まず、ALD装置の真空チャンバー内に高分子材料からなる基材4を載置する(第1の工程)。次に、基材4の外面(表面)の少なくとも一部に、OH基を有する有機高分子を含有する膜状またはフィルム状のUC層3を形成する(第2の工程)。次に、第2の工程で形成されたUC層3の厚み方向の両面のうち、基材4と接する面と反対側の面(UC層3の露出面)の一部を表面処理し、UC層3に含有される有機高分子の官能基を高密度化させる(第3の工程)。次に、原子層堆積膜の原料である前駆体が、UC層3に含有される有機高分子のOH基及び、第3の工程で高密度化された有機高分子の官能基に結合するように、UC層3の厚み方向の両面のうち、基材4と接する面と反対側の面(UC層3の露出面)上に前駆体原料を供給する(第4の工程)。最後に、第4の工程において、結合しなかった余剰の前駆体原料を取り除き、有機高分子のOH基、第3の工程で高密度化された有機高分子の官能基へ結合した前駆体の結合量を飽和させて、原子層堆積膜を形成する(第5の工程)。
以下本発明の第2実施形態について説明する。
<第2実施形態の概要>
本発明の第2実施形態に係る積層体は、基材と原子層堆積膜との間に、アンダーコート層及び密着層を有している。このアンダーコート層は有機高分子を含有する層であり、有機高分子は原子層堆積膜の前駆体が結合する結合部位を有している。すなわち、アンダーコート層に含有されている有機高分子は、原子層堆積膜の前駆体と結合しやすい結合部位として、多数の官能基を有している。また、密着層はアンダーコート層の表層に設けられた層であり、原子層堆積膜の前駆体と結合しやすい結合部位として、さらに多数の官能基を有している。したがって、アンダーコート層あるいは密着層の各官能基に結合した前駆体同士は、互いに架橋されるように結合する。これによって、密着層の面方向に成長する二次元状の原子層堆積膜が形成される。その結果、積層体の膜厚方向にガスが透過するような隙間が生じ難くなり、ガスバリア性の高い積層体を実現することができる。なお、アンダーコート層には無機物質が分散されていてもよい。すなわち、アンダーコート層に無機物質が添加されていることにより、原子層堆積膜の前駆体の吸着密度をさらに向上させることができる。
原子層堆積法(ALD法)によって製造された原子層堆積膜を備えた積層体は、薄膜無線EL、ディスプレイ、半導体メモリ(DRAM)など、ガラス基板やシリコン基板などの電子部品基板として商業生産が行われている。一方、第2実施形態の対象となる積層体の基材は、フレキシブル性を有する高分子基材が対象である。ところが、現状では、高分子基材に対するALD法のプロセスは詳細には研究されていない。そこで、本研究では、高分子基材は、電子部品基板と同様に原子層堆積膜が成長すると想定した。そして、高分子基材に対する原子層堆積膜の成長過程を考察しながら、第2実施形態の積層体へのアプローチを試みた。
その主な原因は、高分子基板上の「吸着サイトの密度」と「吸着サイトの配置」とにあると考えられる。このような原因のため、薄い膜厚では原子層堆積膜の性能を充分に発揮しないため、原子層堆積膜は膜厚を2nm以上、または原子層数を20以上にする必要がある。また、高分子基材が柱状構造であると、その柱状構造の境界部分からガスの透過が起きるために完全なガスバリアを実現することができない。
R-OH+Al(CH3)3→R-Al(CH3)2+CH3-OH (1)
すなわち、式(1)において、高分子鎖に存在するOH基が吸着サイトに吸着する。
まず、本発明の第2実施形態にかかる積層体の構成について説明する。
図4は、本発明の第2実施形態にかかる積層体11の構成を示す断面図である。図4に示すように、積層体11は、高分子材料で形成された基材(高分子基材)14と、基材14の表面に形成された膜状またはフィルム状のアンダーコート層(以下「UC層」という)13と、UC層13の表面(露出面)に形成された密着層15と、密着層15の表面上に形成された原子層堆積膜(以下「ALD膜」という)12と、を備えている。なお、UC層13は、有機高分子の材料を含有していて、ALD膜12の前駆体の吸着サイトを有している。また、密着層15は、UC層13とほぼ同様の化合物であるが、酸素元素Oと炭素元素Cとの元素比O/C及び窒素元素Nと炭素元素Cとの元素比N/Cのうちの少なくとも一方がUC層13より多く、ALD膜12の吸着サイトをUC層13より多く確保している。すなわち、密着層15を構成する化合物は、ALD膜12の前駆体が吸着し易い官能基を多く有している。したがって、ALD膜12の原料である前駆体が、密着層15に含有されているO元素もしくはN元素を含む官能基と結合することにより、ALD膜12は密着層15を介してUC層13を覆うように膜状に形成される。
基材(高分子基材)14としては、UC層13及び密着層15を形成することでALD膜12を密に形成することが可能になる。そのため、ポリエチレン(PE)、求核性に乏しいメチル基(図2Aを参照)を有するポリプロピレン(PP)、ポリスチレン(PS)などの炭化水素のみの高分子材料を用いてもよい。なお、基材14の材料として、求核性のエステル基(図2Bを参照)を有するポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)などのO原子、ナイロン及びポリイミド(PI)などのN原子、及びポリエーテルスルフォンなどのS原子を含有する高分子材料を用いてもよい。
UC層13としては、有機高分子であることが好ましい。また無機物質または有機高分子と無機物質とのハイブリッド材料を用いてもよい。UC層13として好ましい有機高分子は、例えば、OH基を有するポリビニルアルコール、フェノール樹脂等の有機高分子、及び多糖類などが挙げられる。
次に、UC層13に用いられる有機高分子について説明する。有機高分子は使用される溶媒によって水系と溶剤系とに分類される。水系の有機高分子としては、ポリビニルアルコール、及びポリエチレンイミンなどが挙げられる。また、溶剤系の有機高分子としては、アクリルエステル、ポリエステルアクリル、及びポリエーテルアクリルなどが挙げられる。
1.O原子含有樹脂の有機高分子
O原子含有樹脂の有機高分子として好ましい材料として、水酸基(OH)含有樹脂であるポリビニルアルコール、フェノール樹脂、及び多糖類などが挙げられる。なお、多糖類には、セルロース、ヒドロキシメチルセルロース、ヒドロキシエチルセルロース、カルポキシメチルセルローズなどのセルロース誘導体、キチン、キトサンなどが含まれる。
また、O原子含有樹脂の有機高分子として好ましい材料としてカルボニル基(COOH)含有樹脂であるカルボキシビニルポリマーなども挙げられる。
N原子含有樹脂の有機高分子として好ましい材料としては、イミド基(CONHCO)含有樹脂であるポリイミド、ポリエーテルイミド、脂環族ポリイミド、及び溶剤可溶型ポリイミドなどが挙げられる。なお、脂環族ポリイミドについては、通常は、脂環族ポリイミドを構成する芳香族ポリイミドは芳香族テトラカルボン酸二無水物と芳香族ジアミンとから得られる。しかし、これらの材料から得られる脂環族ポリイミドは透明性がない。従って、ポリイミドの透明化として、上記材料のうちの酸二無水物、ジアミンを脂肪族、または脂環族にそれぞれ置き換えることも可能である。また、脂環族カルボン酸としては、1,2,4,5-シクロへキサンテトラカルボン酸、及び1,2,4,5-シクロペンタンテトラカルボン酸二無水物などが挙げられる。さらに、溶剤可溶型ポリイミドとしては、γ-プチロラクトン、N,N-ジメチルアセトアミド、及びN-メチル-2-ピロリドンなどが挙げられる。
S原子含有樹脂の有機高分子として使用できる材料としては、スルホニル基(SO2)含有樹脂であるポリエーテルスルフォン(PES)、ポリスルホン(PSF)、及びポリフェニルスルフォン(PPS)などが挙げられる。このうち、PESとPSFは耐熱性が高い材料である。さらに、ポリマーアロイ、ポリブチレンテレフタレート系ポリマーアロイ、及びポリフェニレンスルフイド系ポリマーアロイなども上記有機高分子として使用できる。なお、必要に応じて、上記の高分子をポリマーアロイに複合化(アロイ、ブレンド、コンボジット)してもよい。
前述したように、UC層13に無機物質(無機化合物)を添加すると、ALD膜の前駆体の吸着密度がさらに向上する。そこで、UC層13に添加される無機物質について詳細に説明する。UC層13に添加される無機物質としては、金属アルコキシド(無機化合物の前駆体)があり、金属アルコキシドは般式としてR1(M-OR2)で表わされる。但し、Rl、R2は炭素数1~8の有機基、Mは金属原子である。なお、金属原子Mは、Si、Ti、Al、及びZrなどである。
密着層15は、図4に示すように、UC層13の表面上(換言すると、UC層13とALD膜12との間)に設けられた有機高分子からなる層である。この密着層15では、UC層13に含有される有機高分子の官能基(すなわち、OH基、COOH基などの求核性官能基)がUC層13よりも高密度化しており、ALD膜12の原料である前駆体が官能基に架橋的に結合する密度を高めるために設けられる。
また、UC層13の底面から表層部分に向かって膜厚方向に元素比N/Cを求めていった際に、元素比N/Cが0.02以上増加する領域を密着層15とUC層13との界面とすることが好ましい。
ALD膜12としては、具体的には、例えば、AlOx、TiOx、SiOx、ZnOx、SnOxなどの無機酸化膜、これらの無機物からなる窒化膜、酸窒化膜、これらとは他元素からなる酸化膜、窒化膜、及び酸窒化膜が挙げられる。中でも、ALD膜12中に、Al,SiあるいはTiを含むものが好ましい。さらに、ALD膜12は、上記膜もしくは元素の混合膜であってもよい。
次に、本発明の第2実施形態にかかる積層体11の製造方法について説明する。ここで、本発明の実施形態に係る積層体11の製造方法は、原子層堆積法によって、高分子フィルムの基材に原子層堆積膜を積層する。具体的には、まず、ALD装置の真空チャンバー内に高分子材料からなる基材14を載置する(第1の工程)。次に、基材14の外面の少なくとも一部に、有機高分子を含有する膜状またはフィルム状のUC層13を形成する(第2の工程)。次に、第2の工程で形成されたUC層13の厚み方向のうち、基材14と接する面と反対側の面(UC層13の露出面)の少なくとも一部を表面処理し、UC層13に求核性の官能基を導入して密着層15を形成する(第3の工程)。次に、原子層堆積膜の原料である前駆体が、UC層13に含有される有機高分子の官能基、または密着層15の求核性の官能基に結合するように、密着層15の表面上に前駆体原料を供給する(第4の工程)。次に、第4の工程において、結合しなかった余剰の前駆体原料を取り除き、UC層13に含有される有機高分子の官能基、及び密着層15の求核性の官能基へ結合した前駆体の結合量を飽和させて、ALD膜12を形成する(第5の工程)。
その結果、第4の工程及び第5の工程で形成されるALD膜12の原料である前駆体が密着層15あるいはUC層13の官能基に架橋的に結合する密度が高くなる。このように、UC層13に含有される有機高分子の官能基を高密度化させた密着層15をUC層13とALD膜12との間に導入することにより、積層体11のガスバリア性をより一層高くすることができる。
本発明の実施形態に係るガスバリアフィルムは、フィルム状に形成された上記態様の積層体11を含む。したがって、上述した積層体11と同様に、ガスバリア性の高い緻密な膜構造を得ることができる。
次に、上記の第1実施形態の積層体の具体的な実施例について説明する。
一方の面が易接着処理面、もう一方の面が未処理面(以下「プレーン面」という。)を有する厚さ100μmのポリエチレンテレフタレート(PET)フィルム(東洋紡績製「A-4100」)または厚さ70μmのポリプロピレン(PP)フィルム(三井化学東セロ)で形成される基材のプレーン面に、ワイヤーバーを用い、塗工液を塗布し、乾燥後の膜厚が0.34μmのUC層を積層した。
UC層の上面に、原子層堆積法(ALD法)によってAl2O3膜を成膜した。このとき、原料ガスはトリメチルアルミニウム(TMA)とした。また、原料ガスと同時にパージガスとしてN2とO2を供給した。
次に、積層体のガスバリア性について、水蒸気透過率測定装置(モコン社製 MOCON Permatran(商標登録))を用いて、40℃/90%RHの雰囲気で積層体の水蒸気透過率を測定した。図7は、本実施例の積層体と比較例の積層体について水蒸気透過率を比較した図である。
実施例1では、PETフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は1回とした。このようにして作製した積層体の試料について、水蒸気透過率(WVTR)を測定した。このときのWVTRの測定値は、4.65[g/m2/day]であった。
実施例2では、PETフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は5回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、2.27[g/m2/day]であった。
実施例3では、PETフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は10回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、1.25[g/m2/day]であった。
実施例4では、PETフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は15回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、1.24[g/m2/day]であった。
実施例5では、PETフィルム基材上のUC層にAl2O3膜を成膜する前に、ICPモードでプラズマ放電を発生させた。なお、このときのプラズマ放電の出力電源は250Wattとした。また、プラズマ放電後のガスパージとして、パージガスO2とN2を10秒供給した。
実施例6では、PPフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は5回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、2.18[g/m2/day]であった。
実施例7では、PPフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は10回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、1.29[g/m2/day]であった。
実施例8では、PPフィルム基材上のUC層の上にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は15回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、1.27[g/m2/day]であった。
実施例9では、PETフィルム基材上のUC層の上にALD法によって20nmのAl2O3膜を成膜した。前駆体の供給排気回数は1回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、1.0×10-3[g/m2/day]であった。
比較例1では、ポリプロピレン(PP)フィルム(三井化学東セロ製、膜厚70μm)を基材かつUC層とみなし、OH基を有しないUC層としての例として用いた。そして、この基材にAl2O3膜を成膜せず、WVTRを測定した。このときのWVTRの測定値は、4.84[g/m2/day]であった。
比較例2では、比較例1と同様、PPフィルムを基材かつUC層とみなし、OH基を有しないUC層として用いた。そして、この基材のプレーン面側にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は5回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、3.24[g/m2/day]であった。
比較例3では、比較例1と同様、PPフィルムを基材かつUC層とみなし、OH基を有しないUC層として用いた。そして、この基材のプレーン面側にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は10回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、2.12[g/m2/day]であった。
比較例4では、比較例1と同様、PPフィルムを基材かつUC層とみなし、OH基を有しないUC層として用いた。そして、この基材のプレーン面側にALD法によって2nmのAl2O3膜を成膜した。前駆体の供給排気回数は15回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、2.02[g/m2/day]であった。
比較例5では、比較例1と同様、PPフィルムを基材かつUC層とみなし、OH基を有しないUC層として用いた。そして、この基材のプレーン面側にALD法によって20nmのAl2O3膜を成膜した。前駆体の供給排気回数は1回とした。このようにして作製した積層体の試料について、WVTRを測定した。このときのWVTRの測定値は、0.30[g/m2/day]であった。
[第2実施例]
一方の面が易接着処理面、もう一方の面が未処理面(以下「プレーン面」という。)を有する厚さ100μmのポリエチレンテレフタレート(PET)フィルム(東洋紡績製「A-4100」)で形成される基材のプレーン面に、ワイヤーバーを用い、塗工液を塗布し、乾燥後の膜厚が0.34μmのUC層を積層した。
UC層の上面に反応ガス兼放電ガスとしてO2またはN2のどちらか一方を、それぞれ成膜室に供給した。その際の処理圧力は10~50Paとした。さらに、プラズマガス励起用電源は13.56MHzの電源を用い、ICP(Inductively Coupled Plasma)モードでプラズマ放電を60秒実施した。なお、このときのプラズマ放電の出力電源は250Wattとした。また、プラズマ放電後のガスパージとして、パージガスO2とN2とを成膜室に10秒供給した。なお、このときの反応温度は90℃とした。
密着層の上面に、原子層堆積法(ALD法)によってAl2O3膜を成膜した。このとき、原料ガスはトリメチルアルミニウム(TMA)とした。また、原料ガスと同時にパージガスとしてN2とO2を供給した。
次に、積層体のガスバリア性について、水蒸気透過率測定装置(モコン社製 MOCON Permatran(商標登録))を用いて、40℃/90%RHの雰囲気で積層体の水蒸気透過率を測定した。下記の表4は、本実施例の積層体と比較例の積層体について水蒸気透過率を比較した表である。
実施例10では、UC層の上にO2を供給しながらプラズマ処理を60秒施して密着層を導入した。このときの密着層表面の元素比をX線光電子分光によって測定した。このときの密着層のOとCとの元素比は、O/C=0.68であった。
実施例11では、UC層の上にO2を供給しながらプラズマ処理を120秒施して密着層を導入した。このときの密着層表面の元素比をX線光電子分光によって測定した。このときの密着層のOとCの元素比は、O/C=0.72であった。
実施例12では、UC層の上にN2を供給しながらプラズマ処理を60秒施して密着層を導入した。このときの密着層表面の元素比をX線光電子分光によって測定した。このときの密着層のNとCの元素比は、N/C=0.03であった。
比較例6では、UC層の上に表面処理を行わなかった。このときのUC層の表面の元素比をX線光電子分光によって測定した。このときのUC層のOとCとの元素比は、O/C=0.40であった。
2,12・・・原子層堆積膜(ALD膜)
3,13・・・アンダーコート層(UC層)
4,14・・・高分子基材(基材)
15・・・密着層
Claims (15)
- 表面を有する基材と、
前記基材の前記表面上の少なくとも一部に形成され、OH基を有する有機高分子を含有する膜状またはフィルム状のアンダーコート層と、
前駆体を原料として形成され、前記アンダーコート層の露出面上を覆う膜状に形成された原子層堆積膜と、
を備え、
前記前駆体の少なくとも一部が、前記有機高分子の前記OH基に結合している積層体。 - 請求項1に記載の積層体であって、
前記有機高分子が、ポリ(メタクリル酸-2-ヒドロキシエチル)とポリメタクリル酸メチルとの共重合体である積層体。 - 請求項2に記載の積層体であって、
前記共重合体のポリ(メタクリル酸-2-ヒドロキシエチル)が、共重合体中で15モル%以上50モル%以下の割合で含まれている共重合体である積層体。 - 請求項2または3に記載の積層体であって、
前記ポリ(メタクリル酸-2-ヒドロキシエチル)中のOH基の一部が架橋して三次元網目構造を形成している積層体。 - 表面を有する高分子基材と、
前記高分子基材の前記表面上の少なくとも一部に形成され、有機高分子を含有する膜状もしくはフィルム状のアンダーコート層と、
前記アンダーコート層の表面を覆うように形成され、求核性官能基を含みかつ酸素元素Oと炭素元素Cとの元素比O/C及び窒素元素Nと炭素元素Cとの元素比N/Cのうちの少なくとも一方が前記アンダーコート層よりも大きい密着層と、
前駆体を原料として前記密着層の表面を覆うように形成されている原子層堆積膜と、を備え、
前記前駆体の少なくとも一部が前記求核性官能基に結合している積層体。 - 前記アンダーコート層が、非共有電子対を含む元素又は官能基を有する請求項5に記載の積層体。
- 前記密着層の膜厚が、0.1nm以上100nm以下である請求項5又は6に記載の積層体。
- 前記アンダーコート層の膜厚が、100nm以上100μm以下である請求項5から7のいずれか一項に記載の積層体。
- 前記原子堆積膜の膜厚が、2nm以上50nm以下である請求項5から8のいずれか一項に記載の積層体。
- 前記原子層堆積膜が、AlまたはSiの少なくとも一方を含む請求項5から9のいずれか一項に記載の積層体。
- 前記原子堆積膜が、前記密着層と接する表面上にTiを含む請求項5から10のいずれか一項に記載の積層体。
- フィルム状に形成された請求項1から11のいずれか一項に記載の積層体を備えるガスバリアフィルム。
- 基材を準備し、
前記基材の表面の少なくとも一部に、官能基を有する有機高分子を含有する膜状またはフィルム状のアンダーコート層を形成し、
前記アンダーコート層の露出面の一部を表面処理し、前記有機高分子の官能基を高密度化させ、
原子層堆積膜となる前駆体が、前記アンダーコート層に含有される前記有機高分子のOH基及び前記高密度化された官能基に結合するように、前記露出面上に前駆体原料を供給し、
前記前駆体原料のうち前記アンダーコート層と結合しなかった余剰の前駆体原料を取り除き、前記有機高分子のOH基及び前記高密度化された前記有機高分子の官能基への前駆体の結合量を飽和させて、原子層堆積膜を形成する
ことを含む積層体の製造方法。 - 基材を準備し、
前記基材の表面の少なくとも一部に、官能基を有する有機高分子を含有する膜状もしくはフィルム状のアンダーコート層を形成し、
前記アンダーコート層の露出面の少なくとも一部を表面処理することで前記アンダーコート層上に求核性の官能基を有する密着層を形成し、
原子層堆積膜となる前駆体が、前記アンダーコート層の官能基または前記密着層の求核性官能基に結合するように、前記密着層の表面上に前駆体原料を供給し、
前記前駆体原料のうち前記アンダーコート層及び前記密着層と結合しなかった余剰の前駆体原料を取り除き、前記アンダーコート層の官能基または前記密着層の求核性官能基へ結合した前記前駆体の結合量を飽和させて、原子層堆積膜を形成する
ことを含む積層体の製造方法。 - 請求項13または14に記載の積層体の製造方法によって製造された積層体をフィルム状に形成するガスバリアフィルムの製造方法。
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