WO2014156777A1 - 中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 - Google Patents

中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 Download PDF

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WO2014156777A1
WO2014156777A1 PCT/JP2014/057171 JP2014057171W WO2014156777A1 WO 2014156777 A1 WO2014156777 A1 WO 2014156777A1 JP 2014057171 W JP2014057171 W JP 2014057171W WO 2014156777 A1 WO2014156777 A1 WO 2014156777A1
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Prior art keywords
electronic device
sealing
sheet
hollow
ion
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PCT/JP2014/057171
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English (en)
French (fr)
Japanese (ja)
Inventor
豊田　英志
祐作 清水
肇 砂原
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日東電工株式会社
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Priority to SG11201508049YA priority Critical patent/SG11201508049YA/en
Priority to CN201480019074.8A priority patent/CN105074903B/zh
Publication of WO2014156777A1 publication Critical patent/WO2014156777A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K3/1006—Materials in mouldable or extrudable form for sealing or packing joints or covers characterised by the chemical nature of one of its constituents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a sheet for sealing a hollow electronic device and a method for manufacturing a hollow electronic device package.
  • the hollow electronic device may be affected by various ionic impurities derived from the sheet-like sealing resin used for sealing.
  • ionic impurities ooze out from a sheet-shaped sealing resin, they easily accumulate in the hollow space, and as a result, characteristics as a hollow electronic device (for example, a pressure sensor, a vibration sensor, etc.) Sensor characteristics when used as a filter, filter characteristics when used as a SAW filter, etc.) may not be sufficiently exhibited. Therefore, a sealing resin with a low content of ionic impurities is desired.
  • the present invention has been made in view of the above-described problems, and its purpose is to provide a hollow electronic device sealing sheet with a small amount of ionic impurities leaching, and a hollow type with a small amount of ionic impurities.
  • An object is to provide a method for manufacturing an electronic device package.
  • the present invention is a sheet for sealing a hollow electronic device, and is characterized by satisfying at least one of the following (a) to (d).
  • (A) A sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the chloride ion concentration in the ion-exchanged water after being left at 121 ° C. and 2 atm for 20 hours is: Less than 30 ppm on a mass basis
  • (B) A sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the sodium ion concentration in the ion-exchanged water after being left at 121 ° C.
  • a sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the phosphate ion concentration in the ion-exchanged water after being left at 121 ° C. under 2 atm for 20 hours is Less than 30 ppm on a mass basis
  • (D) A sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the sulfuric acid ion concentration in the ion-exchanged water after being left at 121 ° C. and 2 atm for 20 hours is expressed as mass.
  • the standard is less than 5 ppm.
  • the hollow electronic device sealing sheet according to the present invention satisfies at least one of the above (a) to (d). Therefore, the amount of ionic impurities (at least one of chloride ions, sodium ions, phosphate ions (PO 4 3 ⁇ ), and sulfate ions (SO 4 2 ⁇ )) is reduced. As a result, in the hollow electronic device package manufactured using the hollow electronic device sealing sheet, deterioration of characteristics is suppressed, and product reliability can be improved.
  • the water vapor transmission rate after thermosetting when it is set to 250 micrometers in thickness is 500 g / m ⁇ 2 > * 24 hours or less on the conditions of temperature 85 degreeC, humidity 85%, and 168 hours.
  • the present inventors have a large amount of moisture that permeates the hollow electronic device sealing sheet and reaches the hollow portion. It has been found that there is a possibility that the ionic impurities may be accumulated on the electronic device due to the ionic impurities dissolved in moisture and flowing into the electronic device. Therefore, the moisture permeability after thermosetting when the thickness of the sheet for encapsulating a hollow electronic device is 250 ⁇ m is 500 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85%, and 168 hours.
  • the sheet for encapsulating the hollow electronic device can be obtained by reducing the moisture permeability.
  • the product reliability of the hollow electronic device package manufactured by using can be further improved.
  • the evaluation conditions of the moisture permeability were set to a temperature of 85 ° C., a humidity of 85%, and a duration of 168 hours in order to meet the Level 1 condition which is the most severe moisture absorption condition in the solder resistance test (MSL test) of the semiconductor package. is there.
  • MSL test solder resistance test
  • the inorganic filler is contained in an amount of 70 to 90% by volume with respect to the entire sheet for sealing a hollow electronic device. If the content of the inorganic filler is 70% by volume or more with respect to the entire hollow electronic device sealing sheet, the moisture permeability can be easily reduced. On the other hand, when the content of the inorganic filler is 90% by volume or less with respect to the entire hollow electronic device sealing sheet, flexibility, fluidity, and adhesiveness are further improved.
  • an ion scavenger it is preferable to contain an ion scavenger.
  • the ion scavenger it is possible to further suppress ionic impurities from reaching the electronic device.
  • the ion scavenger is preferably a hydrotalcite compound.
  • the hydrotalcite-based compound has ion scavenging properties without containing heavy metals such as antimony.
  • the manufacturing method of the hollow type electronic device package which concerns on this invention WHEREIN:
  • the said hollow type electronic device sealing resin sheet is hollow so that one or several hollow type electronic devices mounted on the board
  • Laminating step of laminating on the electronic device, and It includes a sealing body forming step of curing the hollow electronic device sealing resin sheet to form a sealing body.
  • the hollow electronic device package manufactured using the above-described resin sheet for sealing a hollow electronic device has a small amount of ionic impurities that ooze out. Therefore, the hollow type electronic device package manufactured using the resin sheet for sealing a hollow type electronic device can suppress the deterioration of the characteristics, and can improve the product reliability.
  • the present invention it is possible to provide a sheet for sealing a hollow electronic device with a small amount of ionic impurities leaching and a method for manufacturing a hollow electronic device package with a small amount of ionic impurities.
  • FIG. 1 is a cross-sectional view schematically showing a sheet for sealing a hollow electronic device according to an embodiment of the present invention.
  • the hollow electronic device sealing sheet 11 (hereinafter also referred to as “sealing sheet 11”) is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Note that a release treatment may be applied to the support 11a in order to easily peel off the sealing sheet 11.
  • PET polyethylene terephthalate
  • the sealing sheet 11 satisfies at least one of the following (a) to (d).
  • (B) A sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the sodium ion concentration in the ion-exchanged water after being left at 121 ° C. and 2 atm for 20 hours is mass.
  • a sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the phosphate ion concentration in the ion-exchanged water after being left at 121 ° C. under 2 atm for 20 hours is Less than 30 ppm on a mass basis
  • (D) A sheet for sealing a hollow electronic device having a weight of 5 g is immersed in 50 ml of ion-exchanged water, and the sulfuric acid ion concentration in the ion-exchanged water after being left at 121 ° C. and 2 atm for 20 hours is expressed as mass.
  • the standard is less than 5 ppm.
  • an ionic impurity (at least one of chloride ion, sodium ion, phosphate ion, and sulfate ion)
  • the amount of ooze out is reduced.
  • a method for satisfying at least one of the above (a) to (d) for example, when manufacturing the sealing sheet 11, a material having a small content of ionic impurities is selected, And a method of containing an ion scavenger capable of trapping the ionic impurities.
  • the chloride ion concentration is preferably less than 20 ppm. Moreover, although the said chloride ion concentration is so preferable that it is small, it is 1 ppm or more, for example.
  • the sodium ion concentration is preferably less than 7 ppm. Moreover, although the said sodium ion concentration is so preferable that it is small, it is 0.1 ppm or more, for example.
  • the phosphate ion concentration is preferably less than 20 ppm. Moreover, although the said phosphate ion concentration is so preferable that it is small, it is 1 ppm or more, for example.
  • the sulfate ion concentration is preferably less than 3 ppm. Moreover, although the said sulfate ion concentration is so preferable that it is small, it is 0.1 ppm or more, for example.
  • the sealing sheet 11 preferably has a moisture permeability of 500 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85% and 168 hours when the thickness is 250 ⁇ m. 400 g / m 2 ⁇ 24 hours or less is preferable, and 300 g / m 2 ⁇ 24 hours or less is more preferable. Moreover, although the said water vapor transmission rate is so preferable that it is small, it is 1 g / m ⁇ 2 > * 24 hours or more, for example.
  • the moisture permeability after thermosetting when the thickness of the sealing sheet 11 is 250 ⁇ m is 500 g / m 2 ⁇ 24 hours or less under the conditions of a temperature of 85 ° C., a humidity of 85% and 168 hours, from the outside. It is difficult for moisture to enter the hollow part. As a result, it is possible to suppress ionic impurities from reaching the electronic device by being dissolved in moisture from the outside. In this way, in addition to reducing the amount of ionic impurities that exude from the sheet for encapsulating a hollow electronic device, the sheet for encapsulating the hollow electronic device can be obtained by reducing the moisture permeability. The product reliability of the hollow electronic device package manufactured by using can be further improved.
  • the sealing sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolak from the viewpoint of high curing reactivity. Resin can be used suitably. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 11 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic device, a board
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 11 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
  • the sealing sheet 11 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
  • Polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer Can be mentioned.
  • These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption.
  • seat 11 for sealing 1.5 weight% or more is more preferable.
  • flexibility and flexibility are acquired as it is 1.0 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 11 is preferably 3.5% by weight or less, and more preferably 3% by weight or less.
  • substrate is favorable in it being 3.5 weight% or less.
  • the sealing sheet 11 includes an inorganic filler.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica such as fused silica and crystalline silica
  • alumina aluminum nitride, silicon nitride And boron nitride powder.
  • silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the sealing sheet 11 is preferably 70 to 90% by volume, more preferably 74 to 85% by volume with respect to the entire sealing sheet 11. If the content of the inorganic filler is 70% by volume or more with respect to the entire sealing sheet 11, moisture permeability can be easily reduced. On the other hand, when the content of the inorganic filler is 90% by volume or less with respect to the entire sealing sheet 11, flexibility, fluidity, and adhesiveness are improved.
  • the content of the inorganic filler can be explained by using “wt%” as a unit. Typically, the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is as follows. That is, the content of silica in the sealing sheet 11 is preferably 81% by weight or more, and more preferably 84% by weight or more. The content of silica in the sealing sheet 11 is preferably 94% by weight or less, and more preferably 91% by weight or less.
  • the preferred range of the alumina content is as follows. That is, the content of alumina in the sealing sheet 11 is preferably 88% by weight or more, and more preferably 90% by weight or more. The content of alumina in the sealing sheet 11 is preferably 97% by weight or less, and more preferably 95% by weight or less.
  • the sealing sheet 11 includes an ion scavenger.
  • the ion scavenger When the ion scavenger is contained, it is possible to further suppress ionic impurities from reaching the electronic device.
  • Examples of the ion scavenger include hydrotalcite compounds, bismuth hydroxide, antimony pentoxide and the like. These may be used alone or in combination of two or more. Of these, hydrotalcite compounds are preferably used from the viewpoint of having ion scavenging properties without containing heavy metals.
  • the average particle size of the ion scavenger is preferably in the range of 0.1 to 50 ⁇ m from the viewpoint of fluidity.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the ion scavenger is preferably set in the range of 0.01 to 2% by weight, particularly preferably 0.01 to 1% by weight, based on the entire sealing sheet 11.
  • the content ratio of the ion scavenger is preferably set to 0.01% by weight or more with respect to the entire sealing sheet 11.
  • the sealing sheet 11 includes a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 11 can be satisfactorily produced.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the sealing sheet 11 includes a flame retardant component.
  • a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
  • the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
  • the content of the flame retardant component in the sealing sheet 11 is preferably 10% by weight or more, and more preferably 15% by weight or more in the total organic components (excluding inorganic fillers). A flame retardance is favorably acquired as it is 10 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 11 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
  • the sealing sheet 11 preferably contains a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
  • the content of the silane coupling agent in the sealing sheet 11 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
  • the sealing sheet 11 preferably contains a pigment.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the sealing sheet 11 is preferably 0.1 to 2% by weight.
  • the content is 0.1% by weight or more, good marking properties can be obtained when marking is performed by laser marking or the like.
  • the content is 2% by weight or less, a cured product strength is sufficiently obtained.
  • the encapsulating sheet 11 may have a single layer structure or a multilayer structure in which two or more encapsulating sheets are laminated, but there is no risk of delamination and the sheet thickness is highly uniform.
  • a single layer structure is preferable because it is easy to reduce moisture permeability.
  • the thickness of the sealing sheet 11 is not particularly limited, but is, for example, 50 ⁇ m to 2000 ⁇ m from the viewpoint of use as a sealing sheet.
  • the manufacturing method of the sealing sheet 11 is not particularly limited. For example, a method of preparing a kneaded product of a resin composition for forming the sealing sheet 11 and plastic processing the obtained kneaded product into a sheet shape, or a resin composition for forming the sealing sheet 11
  • the method of plastically processing the kneaded material into a sheet shape is adopted, the sealing sheet 11 can be produced without using a solvent, so that the hollow electronic device (for example, the SAW filter 13) is affected by the volatilized solvent. This can be suppressed.
  • a kneaded material is prepared by melt-kneading each component described later with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded material is plastically processed into a sheet.
  • a known kneader such as a mixing roll, a pressure kneader, or an extruder
  • the obtained kneaded material is plastically processed into a sheet.
  • the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin.
  • the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
  • the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
  • the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
  • the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the sealing sheet 11 is used for sealing an electronic device (for example, a SAW (Surface Acoustic Wave) filter; MEMS (Micro Electro Mechanical Systems) such as a pressure sensor and a vibration sensor) that requires hollow sealing. , And can be particularly suitably used for sealing a SAW filter.
  • a SAW Surface Acoustic Wave
  • MEMS Micro Electro Mechanical Systems
  • a sealing method It does not specifically limit as a sealing method, It can seal by a conventionally well-known method. For example, a method of laminating (mounting) an uncured sealing sheet 11 on the substrate so as to cover the hollow electronic device on the substrate, and then curing the sealing sheet 11 to seal it. .
  • substrate For example, a printed wiring board, a ceramic substrate, a silicon substrate, a metal substrate etc. are mentioned.
  • FIG. 2A to FIG. 2C are views schematically showing one step of the method for manufacturing the hollow electronic device package according to one embodiment of the present invention.
  • a SAW filter 13 as a hollow electronic device mounted on the printed wiring board 12 is hollow-sealed with a sealing sheet 11 to produce a hollow electronic device package.
  • a printed wiring board 12 on which a plurality of SAW filters 13 are mounted is prepared (see FIG. 2A).
  • the SAW filter 13 can be formed by dicing a piezoelectric crystal on which predetermined comb-shaped electrodes are formed by a known method.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • the SAW filter 13 and the printed wiring board 12 are electrically connected via protruding electrodes 13a such as bumps.
  • a hollow portion 14 is maintained between the SAW filter 13 and the printed wiring board 12 so as not to inhibit the propagation of surface acoustic waves on the surface of the SAW filter.
  • the distance between the SAW filter 13 and the printed wiring board 12 can be set as appropriate, and is generally about 15 to 50 ⁇ m.
  • the sealing sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW filter 13, and the SAW filter 13 is resin-sealed with the sealing sheet 11 (see FIG. 2B).
  • the sealing sheet 11 functions as a sealing resin for protecting the SAW filter 13 and its accompanying elements from the external environment.
  • the method for laminating the sealing sheet 11 on the printed wiring board 12 is not particularly limited, and can be performed by a known method such as hot pressing or laminator.
  • the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa
  • the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • an electronic device package in which the electronic device is embedded in the thermosetting sealing sheet 16 can be obtained.
  • it is preferable to press under reduced pressure conditions for example, 0.1 to 5 kPa).
  • sealing body forming process In the sealing body forming step, the sealing sheet 11 is thermally cured to form the sealing body 15 (see FIG. 2B).
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • a substrate mounting step can be performed in which rewiring and bumps are formed on the electronic device package 18 and mounted on a separate substrate (not shown).
  • a known apparatus such as a flip chip bonder or a die bonder can be used.
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenol resin MEH-7785-SS (Maywa Kasei Co., Ltd.) (phenolic resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq., Softening point 67 ° C.)
  • Thermoplastic resin SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
  • Ion scavenger DHT-4A manufactured by Kyowa Chemical Industry Co., Ltd.
  • Inorganic filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica, average particle size 20 ⁇ m)
  • Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
  • Carbon black # 20 manufactured by Mitsubishi Chemical Flame retardant: FP-100 manufactured by Fushimi
  • Pharmaceutical phosphazene flame retardant: compound represented by formula (4)) (In the formula, m represents an integer of 3 to 4.)
  • Curing accelerator 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Example 1 Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product. Subsequently, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and a sealing sheet having a thickness shown in Table 1 was produced.
  • the obtained coating solution is coated with a comma coater on the peel-treated surface of a 50 ⁇ m thick polyester film A (MRF-50, manufactured by Mitsubishi Chemical Polyester Co., Ltd.) so that the thickness after drying becomes 50 ⁇ m. And dried.
  • the release-treated surface of a 38 ⁇ m-thick polyester film B (MRF-38, manufactured by Mitsubishi Chemical Polyester) was laminated on the varnish after drying to prepare a thin film sealing sheet.
  • seat for sealing of thickness 250micrometer was produced by laminating
  • thermosetting conditions were 150 ° C. and 60 minutes heating. Thereafter, the moisture permeability of the sealing sheets (after thermosetting) prepared in Examples and Comparative Examples was measured in accordance with JIS Z 0208 (cup method). The measurement conditions were as follows. The results are shown in Table 1. (Measurement condition) Temperature 85 ° C., humidity 85%, 168 hours, sealing sheet thickness: 250 ⁇ m

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
PCT/JP2014/057171 2013-03-28 2014-03-17 中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 WO2014156777A1 (ja)

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SG11201508049YA SG11201508049YA (en) 2013-03-28 2014-03-17 Sheet for sealing hollow type electronic device and method of manufacturing hollow type electronic device package
CN201480019074.8A CN105074903B (zh) 2013-03-28 2014-03-17 中空型电子器件密封用片、及中空型电子器件封装体的制造方法

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WO2017057708A1 (ja) * 2015-09-30 2017-04-06 味の素株式会社 封止用樹脂組成物

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WO2018181597A1 (ja) * 2017-03-31 2018-10-04 ナガセケムテックス株式会社 実装構造体の製造方法およびこれに用いられるシート材

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JP2007224167A (ja) * 2006-02-24 2007-09-06 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いて得られる半導体装置
JP2011219726A (ja) * 2009-11-30 2011-11-04 Panasonic Electric Works Co Ltd 封止用エポキシ樹脂組成物シート及びこれを用いて封止した中空型デバイス

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JP2002053733A (ja) * 2000-08-08 2002-02-19 Nitto Denko Corp 半導体封止用樹脂組成物およびそれを用いた半導体装置ならびに半導体装置の製法
JP5133598B2 (ja) * 2007-05-17 2013-01-30 日東電工株式会社 封止用熱硬化型接着シート
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JPH05251590A (ja) * 1992-03-05 1993-09-28 Nitto Denko Corp 半導体装置
JP2003313399A (ja) * 2002-04-18 2003-11-06 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2007224167A (ja) * 2006-02-24 2007-09-06 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いて得られる半導体装置
JP2011219726A (ja) * 2009-11-30 2011-11-04 Panasonic Electric Works Co Ltd 封止用エポキシ樹脂組成物シート及びこれを用いて封止した中空型デバイス

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WO2017057708A1 (ja) * 2015-09-30 2017-04-06 味の素株式会社 封止用樹脂組成物
KR20180061335A (ko) * 2015-09-30 2018-06-07 아지노모토 가부시키가이샤 밀봉용 수지 조성물
JPWO2017057708A1 (ja) * 2015-09-30 2018-07-26 味の素株式会社 封止用樹脂組成物
KR102612145B1 (ko) 2015-09-30 2023-12-12 아지노모토 가부시키가이샤 밀봉용 수지 조성물

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CN105074903B (zh) 2019-05-31
TW201920397A (zh) 2019-06-01
TW201506068A (zh) 2015-02-16
TWI701276B (zh) 2020-08-11
TWI664211B (zh) 2019-07-01
JP2014209563A (ja) 2014-11-06

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