WO2014136720A1 - Procédé de fabrication de dispositif semi-conducteur et feuille de résine thermodurcissable - Google Patents

Procédé de fabrication de dispositif semi-conducteur et feuille de résine thermodurcissable Download PDF

Info

Publication number
WO2014136720A1
WO2014136720A1 PCT/JP2014/055271 JP2014055271W WO2014136720A1 WO 2014136720 A1 WO2014136720 A1 WO 2014136720A1 JP 2014055271 W JP2014055271 W JP 2014055271W WO 2014136720 A1 WO2014136720 A1 WO 2014136720A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermosetting resin
resin sheet
semiconductor device
weight
manufacturing
Prior art date
Application number
PCT/JP2014/055271
Other languages
English (en)
Japanese (ja)
Inventor
剛 鳥成
豊田　英志
祐作 清水
松村　健
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157024640A priority Critical patent/KR20150126852A/ko
Priority to CN201480012499.6A priority patent/CN105009265A/zh
Publication of WO2014136720A1 publication Critical patent/WO2014136720A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Definitions

  • the present invention relates to a semiconductor device manufacturing method and a thermosetting resin sheet.
  • thermosetting resin sheet As a method for sealing a semiconductor with a resin, a method using a liquid resin or a molding compound resin is known (Patent Document 1). These methods require dedicated dies and frame jigs and are expensive. Therefore, in recent years, a method of resin sealing using a thermosetting resin sheet has been proposed. The use of the thermosetting resin sheet eliminates the need for a dedicated mold or frame jig, so that cost reduction can be expected, and the semiconductor device manufacturing time can be expected to be shortened.
  • a plurality of electronic components for example, semiconductor chips
  • the electronic components may be displaced due to pressure, resistance, and the like accompanying the flow of the resin during sealing.
  • the form to be sealed for example, a component mounted on a support plate
  • the resin composition tends to deviate depending on the shape, size, mounting position, and the like.
  • the inorganic filler is easily segregated, and the amount of warpage may be extremely large because the amount of the inorganic filler in the resin composition after molding varies depending on the location. An increase in the amount of local warpage is a problem because it leads to defects in the process and a decrease in manufacturing yield.
  • the present invention has been made in view of the above-described problems, and a semiconductor device manufacturing method and a thermosetting resin sheet that can prevent positional displacement of electronic components during sealing and suppress local warping of a sealing body.
  • the purpose is to provide.
  • thermosetting resin sheet having a specific composition and a specific minimum viscosity, so that the positional deviation of the electronic component at the time of sealing is achieved. It was found that the local warpage of the sealing body can be suppressed, and the present invention has been completed.
  • the present invention uses a thermosetting resin sheet containing 65 to 93% by weight of an inorganic filler and having a minimum viscosity of 30 to 3000 Pa ⁇ s in a temperature rise measurement using a viscoelastic spectrometer.
  • the present invention relates to a method for manufacturing a semiconductor device, which includes a step (A) of collectively sealing a plurality of electronic components arranged on the substrate.
  • thermosetting resin sheet having a minimum viscosity of 30 Pa ⁇ s or more in the temperature rise measurement using a viscoelastic spectrometer, Resin flow during sealing can be suppressed, and displacement of electronic components can be prevented.
  • thermosetting resin sheet has an inorganic filler content of 93% by weight or less and a minimum viscosity of 3000 Pa ⁇ s or less in a temperature rise measurement using a viscoelastic spectrometer.
  • thermosetting resin sheet having a specific viscosity since the thermosetting resin sheet having a specific viscosity is used, deviation of the resin composition can be prevented, and local warping of the encapsulant can be suppressed. As a result, a stable quality semiconductor device can be provided.
  • the support plate may have any one of a substantially rectangular shape having at least one side of 300 mm or more, a substantially square shape having at least one side of 300 mm or more, and a substantially circular shape having a diameter or minor axis of 12 inches or more. preferable. Since the manufacturing method of the semiconductor device of the present invention uses a specific thermosetting resin sheet, the electronic components arranged on these large-area supports can be sealed together in a good manner.
  • the electronic component is preferably a semiconductor chip.
  • the step (A) includes a step (A-1) of forming a laminate by disposing a thermosetting resin sheet on a chip mounting plate, and a step (A-) of pressing the laminate under reduced pressure. 2). Thereby, voids can be reduced.
  • the pressure pressing in the step (A-2) is preferably performed using a parallel plate press. This eliminates the need for a dedicated mold or frame jig required when using a compression molding machine or a transfer molding machine, thereby reducing the manufacturing cost. In addition, deviation of the resin composition can be prevented, and a semiconductor device with stable quality can be provided.
  • the present invention also relates to a thermosetting resin sheet for use in a method for manufacturing a semiconductor device including a step (A) of collectively sealing a plurality of electronic components arranged on a support plate.
  • thermosetting resin sheet The thermosetting resin sheet of the present invention will be described.
  • the thermosetting resin sheet has a minimum viscosity of 30 Pa ⁇ s or higher, preferably 100 Pa ⁇ s or higher, in a temperature rise measurement using a viscoelastic spectrometer. Since it is 30 Pa ⁇ s or more, the flow of the resin at the time of sealing can be suppressed, and the protrusion of the resin to the outside of the sealing area can be prevented.
  • the minimum viscosity is 3000 Pa ⁇ s or less, preferably 2000 Pa ⁇ s or less. Since it is 3000 Pa ⁇ s or less, good embeddability can be obtained, gaps between a plurality of electronic components arranged on the support plate can be filled well, and at the same time, chip displacement during sealing is prevented. it can.
  • the minimum viscosity in the temperature rise measurement using a viscoelastic spectrometer can be measured by the method described in the Examples.
  • the minimum viscosity in the temperature rise measurement using a viscoelastic spectrometer can be controlled by the content of the silica filler.
  • the minimum viscosity can be increased by increasing the content of silica filler.
  • the temperature showing the lowest viscosity is preferably 80 ° C. or higher, more preferably 90 ° C. or higher. When the temperature is 80 ° C. or higher, the handling property of the thermosetting resin sheet is good, and air entrapment during molding can be prevented.
  • the temperature showing the minimum viscosity is preferably 140 ° C. or lower, more preferably 130 ° C. or lower. When the temperature is 140 ° C. or lower, the followability to unevenness during molding is good.
  • the temperature showing the minimum viscosity can be controlled by the type of curing accelerator.
  • the minimum viscosity can be set in the above range by blending a curing accelerator having a reaction activation temperature of 80 ° C. or higher and 140 ° C. or lower.
  • the thermosetting resin sheet preferably contains a thermosetting resin.
  • a thermosetting resin an epoxy resin and a phenol resin are preferable.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy resin is solid at room temperature with an epoxy equivalent of 100 to 250 and a softening point or melting point of 50 to 130 ° C.
  • bisphenol type epoxy resin, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin and the like are preferable.
  • bisphenol F type epoxy resin is preferred.
  • the softening point or melting point is more preferably 60 to 100 ° C.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolak from the viewpoint of high curing reactivity. Resin can be used suitably.
  • a low hygroscopic material such as a phenol aralkyl resin or a biphenyl aralkyl resin can be suitably used.
  • the mixing ratio of epoxy resin and phenol resin is such that the total of hydroxyl groups in phenol resin is 0.7 to 1.5 equivalents per 1 equivalent of epoxy groups in epoxy resin. It is preferable to use 0.9 to 1.2 equivalents.
  • the total content of epoxy resin and phenol resin in the thermosetting resin sheet is preferably 4% by weight or more. When the content is 4% by weight or more, a cured product having excellent reliability can be obtained.
  • the total content of the epoxy resin and the phenol resin in the thermosetting resin sheet is preferably 18% by weight or less. When the content is 18% by weight or less, a cured product with small warpage can be obtained.
  • thermosetting resin sheet preferably contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it allows curing to proceed. From the viewpoint of curability and storage stability, organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate, and imidazole. System compounds are preferably used. These curing accelerators may be used alone or in combination with other curing accelerators.
  • 2-phenyl-4,5-dihydroxymethylimidazole 2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)] — Ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ′)]-ethyl-s-triazine, 2-phenyl-4-methyl-5-hydroxymethylimidazole are preferred.
  • the content of the curing accelerator is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more with respect to 100 parts by weight of the total content of the epoxy resin and the phenol resin. Hardening is fully accelerated
  • the content of the curing accelerator is preferably 10 parts by weight or less, more preferably 5 parts by weight or less. When it is 10 parts by weight or less, good storage stability can be obtained during storage such as refrigeration.
  • thermosetting resin sheet preferably contains an elastomer.
  • the elastomer imparts flexibility necessary for sealing of the electronic component to the thermosetting resin sheet, and the structure is not particularly limited as long as such an effect is exhibited.
  • various acrylic copolymers such as polyacrylates, styrene acrylate copolymers, butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), isoprene rubber, acrylonitrile rubber, etc.
  • SBR styrene-butadiene rubber
  • EVA ethylene-vinyl acetate copolymer
  • isoprene rubber acrylonitrile rubber, etc.
  • Polymers can be used.
  • acrylic, styrene, or butadiene rubber is preferably used from the viewpoint of being easily dispersed in an epoxy resin and improving the heat resistance and strength of the resulting thermosetting resin sheet. These may be used alone or in combination of two or more.
  • the content of the elastomer is preferably 15 parts by weight or more, more preferably 20 parts by weight or more with respect to 100 parts by weight of the total content of the epoxy resin and the phenol resin. When it is 15 parts by weight or more, entrainment voids due to a decrease in resin viscosity during molding can be reduced and suppressed, and warping after curing can also be reduced and suppressed.
  • the elastomer content is preferably 200 parts by weight or less, more preferably 100 parts by weight or less. When it is 200 parts by weight or less, it is possible to prevent a decrease in the resin strength after curing, and it is possible to ensure reliability as a semiconductor device.
  • thermosetting resin sheet contains an inorganic filler.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica (fused silica, crystalline silica, etc.), alumina, aluminum nitride, silicon nitride And boron nitride powder may be used alone or in combination of two or more.
  • silica powder from the viewpoint that the coefficient of thermal expansion of the cured body of the thermosetting resin sheet can be reduced and warpage after sealing can be suppressed
  • fused silica powder among the silica powder, it is preferable to use fused silica powder. Is more preferable.
  • the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, it is particularly preferable to use a spherical fused silica powder. Among them, those having an average particle diameter in the range of 0.1 to 50 ⁇ m are preferably used, and those having a range of 0.5 to 25 ⁇ m are particularly preferable.
  • the average particle diameter can be derived by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • Content of the inorganic filler in a thermosetting resin sheet is 65 weight% or more, Preferably it is 80 weight% or more. Since it is 65 weight% or more, the water absorption of hardened
  • the thermosetting resin sheet preferably contains a colorant.
  • a colorant By containing the colorant, it is possible to ensure the marking property for identifying the semiconductor device after sealing.
  • the method by various laser markings such as a CO2 laser, a YAG laser, a green laser, is used preferably.
  • the colorant is not particularly limited, and for example, a pigment or a dye can be used. Among these, it is preferable to use a pigment from the viewpoint of easy cost and good visibility at the time of marking.
  • the pigment is not particularly limited, and may be an inorganic pigment or an organic pigment.
  • inorganic pigments include ceramic pigments such as glass fine powder, glass balloons, and ceramic beads; metal strip pigments such as aluminum, iron, zirconium, and cobalt; titanium oxide, magnesium oxide, barium oxide, calcium oxide, Metal oxide pigments such as zinc oxide, zirconium oxide, yttrium oxide, indium oxide, sodium titanate, silicon oxide, nickel oxide, manganese oxide, chromium oxide, iron oxide, copper oxide, cerium oxide, aluminum oxide; iron oxide- Complex oxide pigments such as manganese oxide, iron oxide-chromium oxide, copper oxide-magnesium oxide; metal pigments such as Si and Al, Fe, magnesium, manganese, nickel, titanium, chromium, calcium; iron-chromium, bismuth- Manganese, iron-manganese, manganese-yttrium Alloy pigments; mica, silicon nitride, glitter, and barium sulfate.
  • ceramic pigments such as glass fine powder, glass balloons, and ceramic beads
  • metal strip pigments
  • organic pigments examples include azo pigments, azomethine pigments, lake pigments, thioindigo pigments, anthraquinone pigments, perylene pigments, perinone pigments, diketopyrrolopyrrole pigments, dioxazine pigments, and phthalocyanines.
  • pigments such as pigments, quinphthalone pigments, quinacridone pigments, isoindoline pigments, isoindolinone pigments and carbon pigments.
  • the content of the pigment is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more with respect to 100 parts by weight of the total content of the epoxy resin and the phenol resin.
  • the marking property for identifying the semiconductor device after sealing can be secured as it is 0.5 part by weight or more.
  • the pigment content is preferably 10 parts by weight or less, more preferably 5 parts by weight or less. When it is 10 parts by weight or less, a necessary resin strength can be secured after curing.
  • thermosetting resin sheet preferably contains a flame retardant.
  • the flame retardant is not particularly limited, and examples thereof include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, and tin hydroxide; phosphazene compounds.
  • metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, and tin hydroxide
  • phosphazene compounds include FP-100 (Fushimi Pharmaceutical).
  • the content of the flame retardant is preferably 5 parts by weight or more, more preferably 15 parts by weight or more with respect to 100 parts by weight of the total content of the epoxy resin and the phenol resin. When it is 5 parts by weight or more, necessary flame retardancy can be obtained.
  • the content of the flame retardant is preferably 50 parts by weight or less, more preferably 30 parts by weight or less. When it is 50 parts by weight or less, a decrease in resin strength after curing, a decrease in glass transition temperature, and the like can be minimized, and reliability as a semiconductor package can be secured.
  • thermosetting resin sheet can be appropriately mixed with other additives such as a silane coupling agent as required in addition to the above-described components.
  • thermosetting resin sheet can be manufactured as follows, for example. That is, first, each material for the thermosetting resin sheet described above is uniformly dispersed and mixed to prepare a resin composition. And the prepared resin composition is formed in a sheet form.
  • this forming method for example, a method in which the prepared resin composition is extruded to form a sheet (kneading extrusion), or a varnish is prepared by dissolving or dispersing the prepared resin composition in an organic solvent or the like. And the method (solvent coating) etc. which manufacture this thermosetting resin sheet by apply
  • the solvent coating usually, a plurality of the obtained thermosetting resin sheets are laminated as necessary to adjust the thickness.
  • methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, ethyl acetate etc. can be used, for example. These may be used alone or in combination of two or more. In general, it is preferable to use an organic solvent so that the solid content concentration of the varnish is in the range of 60 to 90% by weight.
  • thermosetting resin sheet By producing a thermosetting resin sheet by kneading extrusion, it can be easily formed into a sheet shape, and a uniform sheet with few voids (bubbles) can be obtained.
  • a method for producing by kneading extrusion for example, a method of preparing a kneaded product by kneading the above-described components with a kneader or the like, and processing the obtained kneaded product into a sheet by a pressing method or an extrusion method is preferable. If necessary, a release sheet such as a polyester film may be bonded to protect the surface of the thermosetting resin sheet.
  • the thickness of the thermosetting resin sheet is not particularly limited, but is usually preferably set to 50 to 2000 ⁇ m, more preferably 100 to 1000 ⁇ m from the viewpoint of uniformity of thickness.
  • the method for manufacturing a semiconductor device of the present invention is not particularly limited as long as it includes a step (A) of collectively sealing a plurality of electronic components arranged on a support plate using a thermosetting resin sheet.
  • a method including a step (A-1) of forming a laminate by disposing a thermosetting resin sheet on a chip mounting plate, and a step (A-2) of pressing the laminate under a reduced pressure.
  • Step (A-1) In step (A-1), a thermosetting resin sheet is placed on the chip mounting plate.
  • the chip mounting plate includes a support plate and a plurality of electronic components arranged on the support plate.
  • the electronic component is not particularly limited, and examples thereof include a semiconductor, a capacitor, a sensor device, a light emitting element, and a vibration element.
  • a semiconductor chip is preferable because it is easy to obtain the merit of high-efficiency production by large-format molding using a thermosetting resin sheet.
  • the number of electronic components arranged on the support plate is not particularly limited as long as it is two or more. For example, it is 100 or more.
  • the upper limit of the number of electronic components is not particularly limited, but is usually 10,000 or less.
  • the layout of the electronic component is not particularly limited.
  • the support plate is not particularly limited, and a substantially polygonal shape or a substantially circular shape can be used.
  • the substantially polygonal shape and the substantially circular shape are shapes when the support plate is viewed in plan.
  • the substantially polygonal shape includes not only a polygonal shape but also a polygon-like shape. Specifically, the substantially polygonal shape includes a polygonal shape, a polygonal similar shape with at least some rounded corners, a polygonal similar shape with at least a part of the side or a part of the side being a curved line, etc. Is included.
  • the substantially polygonal shape is preferably a substantially rectangular shape or a substantially square shape.
  • Such a substantially polygonal support plate preferably has a length of at least one side of 300 mm or more.
  • the upper limit of the length of one side is not specifically limited, For example, it is 700 mm or less.
  • the substantially circular shape includes not only a circular shape but also a circular similar shape. Specifically, in a substantially circular shape, in addition to a perfect circular shape, an elliptical shape, a circular similar shape in which an uneven portion is formed on at least a part of the circumference, and a linear part (a linear part) on at least a part of the circumference And a circular similar shape in which a wavy line portion is formed on at least a part of the circumference.
  • Such a substantially circular support plate preferably has a diameter or minor axis of 12 inches or more.
  • the upper limit of a diameter or a short axis is not specifically limited, For example, it is 16 inches or less.
  • a support plate examples include a temporary fixing material, a glass plate, a transparent plastic plate, a printed wiring board, and a silicon wafer.
  • the temporary fixing material includes a support and a pressure-sensitive adhesive layer laminated on the support.
  • the laminate obtained by the step (A-1) includes a chip mounting plate and a thermosetting resin sheet disposed on the chip mounting plate.
  • Step (A-2) In step (A-2), the laminate obtained in step (A-1) is pressed under reduced pressure.
  • the decompression can be performed by a conventionally known method.
  • the post-decompression pressure i.e. atmospheric pressure under reduced pressure, preferably 0.1 kg / cm 2 or less, more preferably 0.01 kg / cm 2 or less.
  • molding can be reduced favorably as it is 0.1 kg / cm ⁇ 2 > or less.
  • the minimum of the pressure after pressure reduction is not specifically limited, For example, it is 0.0001 kg / cm ⁇ 2 > or more.
  • the pressing temperature is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 90 ° C. or higher.
  • the pressing temperature is preferably 130 ° C. or lower, more preferably 120 ° C. or lower, and further preferably 110 ° C. or lower.
  • the pressure press is preferably a parallel plate press.
  • a conventionally well-known thing can be used as a parallel plate press.
  • the pressing pressure is preferably 5 kg / cm 2 or more. If it is 5 kg / cm 2 or more, gaps between the plurality of electronic components arranged on the support plate can be satisfactorily filled.
  • the press pressure is preferably 60 kg / cm 2 or less. When it is 60 kg / cm 2 or less, it is possible to prevent the components on the substrate, the wafer substrate, and the like from being damaged.
  • the pressing time is not particularly limited, but is usually 0.5 to 30 minutes.
  • temperature distribution and pressure distribution are important. It is also important to adjust the parallel accuracy of the press plate. These may be set as appropriate.
  • the sealing body obtained by the step (A-2) includes an electronic component and a thermosetting resin sheet that covers the electronic component.
  • the other process sealing body is heated to cure the thermosetting resin sheet.
  • the temperature for heating the sealing body is preferably 90 ° C. or higher, more preferably 100 ° C. or higher, and further preferably 110 ° C. or higher. Moreover, the temperature which heats a sealing body becomes like this. Preferably it is 200 degrees C or less, More preferably, it is 180 degrees C or less, More preferably, it is 140 degrees C or less.
  • the time for heating the sealing body is not particularly limited, and is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • Temporary fixing material preparation step In the temporary fixing material preparation step, a temporary fixing material 3 is prepared (see FIG. 1).
  • the temporarily fixing material 3 includes a support 3b and an adhesive layer 3a laminated on the support 3b.
  • a heat-peelable adhesive layer, a radiation-curing-type adhesive layer, etc. are used from the reason that it can peel easily in the below-mentioned adhesive layer peeling process. It does not specifically limit as a material of the support body 3b.
  • metal materials such as SUS
  • plastic materials such as polyimide, polyamideimide, polyetheretherketone, and polyethersulfone.
  • the chip mounting temporary fixing material 34 includes the temporary fixing material 3 and a plurality of semiconductor chips 33 arranged on the temporary fixing material 3.
  • a flip chip bonder, a die bonder or the like is used for the placement of the semiconductor chip 33.
  • thermosetting resin sheet 31 is placed on the chip mounting temporary fixing material 34 to form a laminate (not shown).
  • the laminated body is pressed by a parallel plate method to obtain a sealing body 35 (see FIG. 2).
  • the sealing body 35 includes a semiconductor chip 33 and a thermosetting resin sheet 31 that covers the semiconductor chip 33.
  • the sealing body 35 is in contact with the temporary fixing material 3.
  • the pressing conditions the conditions of the above-described step (A-2) are adopted.
  • thermosetting process sealing body 35 is heated and the thermosetting resin sheet 31 is cured.
  • Temporary fixing material peeling step peeling is performed between the pressure-sensitive adhesive layer 3a and the sealing body 35 (see FIG. 3). Peeling is preferably performed after reducing the adhesive strength of the pressure-sensitive adhesive layer 3a. For example, when the pressure-sensitive adhesive layer 3a is a heat-peelable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 3a is heated and peeled after the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 3a is reduced. The semiconductor chip 33 of the sealing body 35 is exposed by peeling.
  • the sealing body 35 is ground to form a ground body 36 (see FIG. 4).
  • the surface on the side where the adhesive layer 3a of the grinding body 36 is formed is cleaned by plasma treatment or the like.
  • Rewiring formation process In the rewiring formation process, a rewiring 39 connected to the semiconductor chip 33 is formed on the grinding body 36, and then an insulating layer is formed on the rewiring 39 and the grinding body 36 (see FIG. 5).
  • a metal seed layer is formed on the exposed semiconductor chip 33 using a known method such as a vacuum film forming method, and the rewiring 39 is formed by a semi-additive method or the like. Thereafter, an insulating layer such as polyimide or polybenzoxazole (PBO) is formed on the rewiring 39 and the grinding body 36.
  • a known method such as a vacuum film forming method
  • the rewiring 39 is formed by a semi-additive method or the like.
  • an insulating layer such as polyimide or polybenzoxazole (PBO) is formed on the rewiring 39 and the grinding body 36.
  • Bump forming process A bumping process for forming the bump 37 on the rewiring 39 is performed (see FIG. 6).
  • the bumping process is performed by a known method such as solder ball or solder plating.
  • the material of the bump 37 is not particularly limited.
  • a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, a tin-zinc-bismuth metal material Such as solders (alloys), gold-based metal materials, copper-based metal materials, and the like.
  • Dicing process Dicing of the laminated body which consists of elements, such as the semiconductor chip 33, the thermosetting resin sheet 31, and the rewiring 39, is performed (refer FIG. 7). Thereby, the semiconductor device 38 separated into pieces is obtained.
  • Epoxy resin 1 YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epoxy equivalent 180-210 g / eq. Melting point 75-85 ° C.)
  • Epoxy resin 2 EXA-4850-150 (liquid epoxy resin) manufactured by Dainippon Ink & Chemicals, Inc.
  • Epoxy resin 3 EPPN-501-HY (solid epoxy resin) manufactured by Nippon Kayaku Co., Ltd.
  • Phenol resin MEH-7851SS manufactured by Meiwa Kasei Co., Ltd. (phenol resin having biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq.
  • Elastomer 1 SIBSTAR 102T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
  • Elastomer 2 Acrylic copolymer curing accelerator obtained in Production Example 1 below: Curazole 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Co., Ltd.
  • Curing accelerator 2 Curezol 2P4MHZ-PW (2-phenyl-4-methyl-5-hydroxymethylimidazole) manufactured by Shikoku Kasei Pigment 1: Carbon black # 20 manufactured by Mitsubishi Chemical Corporation Pigment 2: Carbon black MA600 manufactured by Mitsubishi Chemical Corporation Flame retardant: Raptor FP-100 manufactured by Fushimi Pharmaceutical Co., Ltd.
  • Inorganic filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica, average particle size 20 ⁇ m)
  • thermosetting resin sheet According to the mixing ratio described in Table 1, each component was blended with a mixer, melt kneaded at 120 ° C. for 2 minutes with a twin-screw kneader, and then extruded from a T-die to obtain a thickness. A thermosetting resin sheet having a thickness of 500 ⁇ m was produced.
  • thermosetting resin sheet The following evaluation was performed using the obtained thermosetting resin sheet.
  • Chip shift 100 semiconductor chips using a die bonder SPA-300 (manufactured by Shinkawa Co., Ltd.) on a pressure-sensitive adhesive layer (Riva Alpha manufactured by Nitto Denko Co., Ltd.) placed on a circular SUS plate having a diameter of 300 mm (Semiconductor chip size: 5 mm ⁇ (thickness 300 ⁇ m)) were arranged at equal intervals. After the placement, the position of each semiconductor chip placed on the pressure sensitive adhesive layer (the position of the semiconductor chip before molding) was measured using a smart scope CNC500 manufactured by OGP.
  • thermosetting resin sheet is stacked on the semiconductor chip arrangement surface, and then pressed under a reduced pressure (0.006 kg / cm 2 ) at 100 ° C., 15 kg / cm 2 for 2 minutes using a parallel plate press.
  • a sealed body 1 was obtained.
  • the sealing body 1 includes a circular SUS plate, a pressure-sensitive adhesive layer disposed on the circular SUS plate, a semiconductor chip disposed on the pressure-sensitive adhesive layer, a thermosetting resin sheet covering the semiconductor chip, Is provided.
  • the sealing body 1 was a circle having a diameter of 300 mm in plan view.
  • the sealing body 1 was heated at 120 ° C. for 3 hours to cure the thermosetting resin sheet. Thereafter, the sealing body 1 was heated at 180 ° C.
  • the sealing body 2 provided with the semiconductor chip and the sealing resin which covers the semiconductor chip was obtained.
  • the sealing resin is derived from a thermosetting resin sheet.
  • the semiconductor chip position semiconductor chip position after molding
  • the shift (deviation width) of the semiconductor chip was determined. The results are shown in Table 2.
  • the X direction is a direction of a straight line connecting the fourth measurement point 54 and the fifth measurement point 55.
  • the Y direction is the direction of a straight line connecting the first measurement point 51 and the eighth measurement point 58.
  • warp The four measurement points (first measurement point 51, fourth measurement point 54, fifth measurement point 55, and eighth measurement point 58) shown in FIG. 8 using the warpage measuring device (Thermo Ray PS400) manufactured by Thermotronics Trading Co., Ltd. ) was measured. The results are shown in Table 2.
  • Example 2 According to the blending ratio shown in Table 1, a thermosetting resin sheet having a thickness of 500 ⁇ m was produced in the same manner as in Example 1. Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet. The maximum value of chip shift was 5 ⁇ m. The maximum value of warpage was 2.8 mm. The maximum value of the surface step was 6.5 ⁇ m. Other evaluation results are shown in Table 1.
  • Example 3 According to the blending ratio shown in Table 1, a thermosetting resin sheet having a thickness of 500 ⁇ m was produced in the same manner as in Example 1. Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet. The maximum value of chip shift was 13 ⁇ m. The maximum value of warpage was 1.4 mm. The maximum value of the surface step was 4.2 ⁇ m. Other evaluation results are shown in Table 1.
  • thermosetting resin sheet Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet.
  • the maximum value of the chip shift was 120 ⁇ m.
  • the maximum value of warpage was 4.5 mm.
  • the maximum value of the surface step was 25 ⁇ m.
  • Other evaluation results are shown in Table 1.
  • thermosetting resin sheet having a thickness of 500 ⁇ m was produced in the same manner as in Example 1. Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet. The maximum value of chip shift was 25 ⁇ m. The maximum value of warpage was 3.1 mm. The maximum value of the surface step was 10.5 ⁇ m. Other evaluation results are shown in Table 1.
  • thermosetting resin sheet having a thickness of 500 ⁇ m was produced in the same manner as in Example 1. Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet. The maximum value of the chip shift was 19 ⁇ m. The maximum value of warpage was 1.3 mm. The maximum value of the surface step was 4.1 ⁇ m. Other evaluation results are shown in Table 1.
  • Example 4 According to the blending ratio shown in Table 1, each component was mixed with a mixed solution containing methyl ethyl ketone and toluene in a ratio of 5: 5 to prepare a mixture having a component concentration of 90% by weight.
  • a varnish for coating was obtained by stirring the mixture for 10 minutes at 2000 rpm using a rotation and revolution mixer (Shinki Co., Ltd., Nertaro Awatori).
  • the coating varnish was coated on a 50 ⁇ m thick silicone-treated PET (Mitsubishi Chemical: MRF50) and then dried at 110 ° C. for 10 minutes with a hot air dryer to obtain a resin sheet having a thickness of 50 ⁇ m.
  • the obtained resin sheet was laminated
  • the reason why the mixed solution containing methyl ethyl ketone and toluene was used is that SIBSTAR 072T, which is an elastomer, is difficult to dissolve in methyl ethyl ketone.
  • Evaluation similar to Example 1 was performed using the obtained thermosetting resin sheet.
  • the maximum value of the chip shift was 9 ⁇ m.
  • the maximum value of warpage was 1.9 mm.
  • the maximum value of the surface step was 5.0 ⁇ m.
  • Other evaluation results are shown in Table 1.
  • Temporary Fixing Material 3a Adhesive Layer 3b Support 31 Thermosetting Resin Sheet 33 Semiconductor Chip 34 Chip Mounted Temporary Fixing Material 35 Sealing Body 36 Grinding Body 37 Bump 38 Semiconductor Device 39 Rewiring 50 0th Measurement Point 51 First Measurement Point 52 second measurement point 53 third measurement point 54 fourth measurement point 55 fifth measurement point 56 sixth measurement point 57 seventh measurement point 58 eighth measurement point

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication de dispositif semi-conducteur et d'une feuille de résine thermodurcissable apte à éviter un désalignement de composants électroniques durant un scellage et apte à supprimer une déformation locale du corps de scellage. Cette feuille de résine thermodurcissable possède une teneur en charge inorganique de 65 à 93% en poids et possède une viscosité minimale de 30 à 3000 Pa*s durant une mesure à augmentation de température à l'aide d'un spectromètre à viscoélasticité. Ce procédé de fabrication de dispositif semi-conducteur met en jeu une étape (A) pour utiliser cette feuille de résine thermodurcissable pour sceller de manière collective de multiples composants électroniques agencés sur une plaque de support.
PCT/JP2014/055271 2013-03-07 2014-03-03 Procédé de fabrication de dispositif semi-conducteur et feuille de résine thermodurcissable WO2014136720A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020157024640A KR20150126852A (ko) 2013-03-07 2014-03-03 반도체 장치의 제조 방법 및 열경화성 수지 시트
CN201480012499.6A CN105009265A (zh) 2013-03-07 2014-03-03 半导体装置的制造方法及热固化性树脂片

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-045720 2013-03-07
JP2013045720 2013-03-07
JP2014-022335 2014-02-07
JP2014022335A JP2014197670A (ja) 2013-03-07 2014-02-07 半導体装置の製造方法及び熱硬化性樹脂シート

Publications (1)

Publication Number Publication Date
WO2014136720A1 true WO2014136720A1 (fr) 2014-09-12

Family

ID=51491237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/055271 WO2014136720A1 (fr) 2013-03-07 2014-03-03 Procédé de fabrication de dispositif semi-conducteur et feuille de résine thermodurcissable

Country Status (5)

Country Link
JP (1) JP2014197670A (fr)
KR (1) KR20150126852A (fr)
CN (1) CN105009265A (fr)
TW (1) TW201445648A (fr)
WO (1) WO2014136720A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015019817A1 (fr) * 2013-08-07 2015-02-12 日東電工株式会社 Procédé permettant de produire un boîtier de semi-conducteur
JP2018527425A (ja) * 2015-06-29 2018-09-20 テーザ・ソシエタス・ヨーロピア 特に電子的装置のカプセル化のための接着剤
KR20200081336A (ko) 2017-11-17 2020-07-07 린텍 가부시키가이샤 수지 시트
NL2029703A (en) * 2020-12-21 2022-07-15 Intel Corp Microelectronic structures including bridges

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6603174B2 (ja) 2016-05-11 2019-11-06 信越化学工業株式会社 半導体装置、及び半導体装置の製造方法
JP6224188B1 (ja) 2016-08-08 2017-11-01 太陽インキ製造株式会社 半導体封止材
JP7070559B2 (ja) 2017-04-28 2022-05-18 昭和電工マテリアルズ株式会社 封止用フィルム及び封止構造体、並びにこれらの製造方法
EP3639297A4 (fr) * 2017-06-12 2021-01-20 Uniqarta, Inc. Assemblage parallèle de composants discrets sur un substrat
WO2019021766A1 (fr) * 2017-07-24 2019-01-31 株式会社デンソー Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur
JP6780675B2 (ja) * 2017-07-24 2020-11-04 株式会社デンソー 半導体装置及び半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010263199A (ja) * 2009-04-07 2010-11-18 Furukawa Electric Co Ltd:The 半導体装置の製造方法および半導体装置
JP2011211242A (ja) * 2009-12-14 2011-10-20 Sumitomo Bakelite Co Ltd 電子装置の製造方法、電子装置、電子装置パッケージの製造方法および電子装置パッケージ
WO2012026091A1 (fr) * 2010-08-24 2012-03-01 住友ベークライト株式会社 Procédé pour fabriquer un dispositif électronique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010263199A (ja) * 2009-04-07 2010-11-18 Furukawa Electric Co Ltd:The 半導体装置の製造方法および半導体装置
JP2011211242A (ja) * 2009-12-14 2011-10-20 Sumitomo Bakelite Co Ltd 電子装置の製造方法、電子装置、電子装置パッケージの製造方法および電子装置パッケージ
WO2012026091A1 (fr) * 2010-08-24 2012-03-01 住友ベークライト株式会社 Procédé pour fabriquer un dispositif électronique

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015019817A1 (fr) * 2013-08-07 2015-02-12 日東電工株式会社 Procédé permettant de produire un boîtier de semi-conducteur
JP2018527425A (ja) * 2015-06-29 2018-09-20 テーザ・ソシエタス・ヨーロピア 特に電子的装置のカプセル化のための接着剤
KR20200081336A (ko) 2017-11-17 2020-07-07 린텍 가부시키가이샤 수지 시트
NL2029703A (en) * 2020-12-21 2022-07-15 Intel Corp Microelectronic structures including bridges
NL2034818A (en) * 2020-12-21 2023-07-11 Intel Corp Microelectronic structures including bridges

Also Published As

Publication number Publication date
CN105009265A (zh) 2015-10-28
KR20150126852A (ko) 2015-11-13
TW201445648A (zh) 2014-12-01
JP2014197670A (ja) 2014-10-16

Similar Documents

Publication Publication Date Title
WO2014136720A1 (fr) Procédé de fabrication de dispositif semi-conducteur et feuille de résine thermodurcissable
US9659883B2 (en) Thermally curable resin sheet for sealing semiconductor chip, and method for manufacturing semiconductor package
JP5349432B2 (ja) 電子部品装置の製法およびそれに用いる電子部品封止用樹脂組成物シート
US9029438B2 (en) Thermosetting resin composition, B-stage heat conductive sheet, and power module
WO2014162951A1 (fr) Procédé de fabrication d'un dispositif à semi-conducteurs
TWI621225B (zh) 中空密封用樹脂薄片及中空封裝之製造方法
WO2015104917A1 (fr) Composition de résine époxy liquide pour scellement de semi-conducteur et dispositif à semi-conducteur scellé par une résine
WO2014126150A1 (fr) Feuille de scellage pour élément semi-conducteur, dispositif semi-conducteur, et procédé de fabrication de dispositif semi-conducteur
WO2015098833A1 (fr) Procédé de fabrication pour boîtier de semi-conducteur
TW201532151A (zh) 半導體封裝之製造方法
JP2015216229A (ja) 半導体装置の製造方法及び熱硬化性樹脂シート
TW201532211A (zh) 半導體封裝之製造方法
JP2006303119A (ja) 半導体装置の製造方法及び半導体封止用樹脂シート
KR20180048674A (ko) 수지 조성물, 경화물, 봉지용 필름 및 봉지 구조체
WO2016072236A1 (fr) Composition de résine, procédé de fabrication de dispositif à semi-conducteur et dispositif à semi-conducteur
JP2015082606A (ja) 半導体パッケージの製造方法
WO2014156833A1 (fr) Feuille de résine de scellage creuse et procédé de fabrication de conditionnement creux
JP7142233B2 (ja) 封止用エポキシ樹脂組成物、硬化物、及び半導体装置
JP6302801B2 (ja) 封止用シート
JP2005247953A (ja) 半導体用接着剤組成物およびそれを用いた半導体用接着剤シート
JP2015220400A (ja) 電子デバイスパッケージの製造方法及び電子デバイスの封止方法
JP2015126129A (ja) 電子部品パッケージの製造方法
TW202032674A (zh) 半導體裝置的製造方法、膜狀接著劑、接著膜及切晶-黏晶一體型膜
JP2015220401A (ja) 電子デバイスパッケージの製造方法及び電子デバイスの封止方法
JP2019083342A (ja) セパレータ付き封止用シート、及び、半導体装置の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14761255

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20157024640

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 14761255

Country of ref document: EP

Kind code of ref document: A1