WO2019021766A1 - Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur Download PDF

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Publication number
WO2019021766A1
WO2019021766A1 PCT/JP2018/025293 JP2018025293W WO2019021766A1 WO 2019021766 A1 WO2019021766 A1 WO 2019021766A1 JP 2018025293 W JP2018025293 W JP 2018025293W WO 2019021766 A1 WO2019021766 A1 WO 2019021766A1
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WIPO (PCT)
Prior art keywords
semiconductor
semiconductor device
sealing resin
resin portion
semiconductor element
Prior art date
Application number
PCT/JP2018/025293
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English (en)
Japanese (ja)
Inventor
和明 馬渡
Original Assignee
株式会社デンソー
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Filing date
Publication date
Priority claimed from JP2018113061A external-priority patent/JP6780675B2/ja
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Priority to CN201880048844.XA priority Critical patent/CN110945645B/zh
Priority to DE112018003765.7T priority patent/DE112018003765B4/de
Publication of WO2019021766A1 publication Critical patent/WO2019021766A1/fr
Priority to US16/747,047 priority patent/US11355357B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • the present disclosure relates to a semiconductor device and a method of manufacturing the semiconductor device.
  • Patent Document 1 a semiconductor package in which a sensor chip is bonded to a lead frame and covered with a resin in a state where a part of the sensor chip and a part of the lead frame are exposed.
  • the semiconductor package needs a lead frame for arranging a sensor chip, and an adhesive for bonding the lead frame and the sensor chip, and the number of parts is increased.
  • the semiconductor package has a large size because the sensor chip is disposed on the lead frame.
  • An object of the present disclosure is to provide a semiconductor device and a method of manufacturing the semiconductor device, which can reduce the number of parts and can miniaturize the physique.
  • a semiconductor device includes: a semiconductor element; an electronic component electrically connected to the semiconductor element; and a connection member electrically connecting the semiconductor element to the electronic component.
  • a semiconductor having a first surface and a second surface opposite to the first surface, the semiconductor surface being the surface of the semiconductor element and the component surface being the surface of the electronic component being exposed to the first surface side And a sealing resin portion integrally holding the element, the electronic component, and the connecting member.
  • the semiconductor element, the electronic component, and the connection member are held by the sealing resin portion.
  • a lead frame on which a semiconductor element (sensor chip) as disclosed in Patent Document 1 is mounted, an adhesive for mechanically connecting the lead frame and the semiconductor element, and the like are unnecessary, and the number of parts can be reduced.
  • the physical size can be made smaller than in the case of using a lead frame.
  • a semiconductor device an electronic component electrically connected to the semiconductor device, a connection member electrically connecting the semiconductor device and the electronic component, a first surface, and A semiconductor element and an electronic component in a state in which the semiconductor surface which is the surface of the semiconductor element and the component surface which is the surface of the electronic component are exposed to the first surface side.
  • the semiconductor device includes: a sealing resin portion integrally holding the connecting member and the connecting member; The semiconductor element and the electronic component are arranged on the support provided with the adhesive film so that the semiconductor surface and the component surface are in contact with the adhesive film, and the semiconductor element and the electronic component are electrically connected through the connection member.
  • the sealing process After the mounting step, a sealing step of integrally sealing the semiconductor element, the electronic component, and the connection member in the sealing resin portion to manufacture a sealing structure;
  • the sealing process WHEREIN The peeling process which peels an adhesive film from a sealing structure and separates a sealing structure and a support body is provided.
  • the semiconductor device as described above can be manufactured. Furthermore, according to the manufacturing method of the second aspect, it is not necessary to press the mold against the semiconductor surface exposed from the sealing resin portion of the semiconductor element. Therefore, the stress applied to the semiconductor element can be reduced at the time of manufacturing, and breakage can be suppressed as compared with the case where the mold is pressed against the semiconductor element.
  • a semiconductor device includes a semiconductor element, an electronic component electrically connected to a conductor element, and a connecting member electrically connecting the semiconductor element and the electronic component.
  • the semiconductor device has a first surface opposite to the semiconductor surface which is the front surface of the semiconductor element, and a second surface opposite to the first surface which is the surface opposite to the semiconductor back surface opposite to the semiconductor surface.
  • the sealing resin portion is a surface of the semiconductor such that a stress applied to the semiconductor element from a portion provided on the semiconductor surface side is equal to a stress applied to the semiconductor element from a portion provided on the semiconductor back surface side.
  • the distance between the second surface and the first surface and the distance between the back surface of the semiconductor and the second surface are set.
  • the semiconductor element, the electronic component, and the connection member are integrally held by the sealing resin portion, the number of components can be reduced and the physical size can be miniaturized.
  • a stress relaxation member having a smaller linear expansion coefficient or elastic modulus than the sealing resin portion is provided between the semiconductor element and the sealing resin portion, the linear expansion coefficient of the semiconductor element and the sealing resin portion It is possible to suppress application of stress due to the difference to the semiconductor element.
  • the semiconductor surface and the first surface are such that the stress applied to the semiconductor element from the portion provided on the semiconductor surface side is equal to the stress applied to the semiconductor element from the portion provided on the semiconductor back surface side. And the distance between the back surface of the semiconductor and the second surface. For this reason, the distortion of the semiconductor element can be suppressed more than in the case where the stress from the semiconductor front side and the stress from the semiconductor back side are different.
  • a semiconductor device an electronic component electrically connected to the semiconductor device, a connecting member electrically connecting the semiconductor device and the electronic component, and a surface of the semiconductor device A semiconductor surface opposite to the semiconductor surface, and a second surface opposite to the first surface, the second surface opposite to the first surface;
  • a sealing resin portion integrally holding the semiconductor element, the electronic component, and the connection member in a state in which a portion of the first surface side is exposed to the first surface side, and between the semiconductor element and the sealing resin portion
  • a method of manufacturing a semiconductor device comprising: a stress relieving member having a linear expansion coefficient or an elastic modulus smaller than that of the sealing resin portion, And a mounting step of arranging the semiconductor element on the support provided with the adhesive film such that a part of the semiconductor surface is in contact with the adhesive film, and electrically connecting the semiconductor element and the electronic component through the connecting member.
  • the semiconductor device as described above can be manufactured by the manufacturing method according to the fourth aspect.
  • FIG. 7 is a cross-sectional view of each other in the process showing the method of manufacturing the semiconductor device according to the first embodiment. It is a top view which shows schematic structure of the semiconductor device in 2nd Embodiment. It is sectional drawing in alignment with the VV line of FIG.
  • FIG. 16 is a cross-sectional view for each step showing the method for manufacturing the semiconductor device in the second embodiment. It is sectional drawing which shows schematic structure of the semiconductor device in 3rd Embodiment.
  • FIG. 18 is a cross-sectional view for each step showing the method for manufacturing the semiconductor device in the third embodiment. It is sectional drawing which shows schematic structure of the semiconductor device in 4th Embodiment. It is sectional drawing which shows schematic structure of the semiconductor device in 5th Embodiment. It is sectional drawing which shows schematic structure of the semiconductor device in 6th Embodiment. It is sectional drawing which shows the manufacturing method of the semiconductor device in 6th Embodiment. It is sectional drawing which shows schematic structure of the semiconductor device in 7th Embodiment. It is a top view which shows schematic structure of the semiconductor device in 8th Embodiment. It is sectional drawing in alignment with the XV-XV line of FIG.
  • FIG. 16 is a plan view showing a schematic configuration of a semiconductor device at the time of manufacture in Modification 1;
  • FIG. 21 is a cross-sectional view taken along the line XXI-XXI of FIG. 20.
  • FIG. 18 is a plan view showing a schematic configuration of a semiconductor device at the time of manufacture in Modification 2.
  • FIG. 18 is a plan view showing a schematic configuration of a semiconductor device at the time of manufacture in Modification 3;
  • the semiconductor device 100 according to the first embodiment and the method for manufacturing the semiconductor device 100 will be described with reference to FIGS. 1, 2 and 3.
  • a semiconductor device 100 including a sensor element 10 that outputs an electrical signal according to a physical quantity is employed.
  • the semiconductor device 100 includes a sensor element 10, a control element 20, an external connection terminal 30, a sealing resin portion 40, a first wire 51, a second wire 52, and the like.
  • the sensor element 10 corresponds to a semiconductor element.
  • the sensor element 10 can adopt, for example, a pressure sensor that outputs an electrical signal according to a pressure as a physical quantity, an acceleration sensor that outputs an electrical signal according to an acceleration as a physical quantity, or the like.
  • the sensor element 10 contains the sensing part 11 which detects a physical quantity. That is, the sensing unit 11 is a part that outputs an electrical signal according to the physical quantity.
  • the sensing unit 11 has, for example, a diaphragm structure or a comb-tooth structure.
  • an electrical signal can be said to be a sensor signal.
  • the sensor element 10 has, for example, a rectangular parallelepiped shape. And one surface (surface) of sensor element 10 is semiconductor surface S11.
  • the semiconductor surface S11 also includes the surface of the sensing unit 11, that is, the detection surface.
  • the control element 20 corresponds to an electronic component and a circuit element.
  • the control element 20 is electrically connected to the sensor element 10 via the first wire 51.
  • the control element 20 performs, for example, signal processing such as analog-digital conversion processing and filter processing on the sensor signal.
  • the control element 20 has, for example, a rectangular parallelepiped shape. And one surface (surface) of control element 20 is element surface S21 as a component surface.
  • the sensor element 10 is provided with an electrode pad on the opposite side of the semiconductor surface S11. Then, in the sensor element 10, the first wire 51 is mechanically and electrically connected to its own electrode pad. Similarly, the control element 20 is provided with an electrode pad on the opposite side of the element surface S21. The control element 20 has the first wire 51 and the second wire 52 mechanically and electrically connected to its own electrode pad.
  • the first wire 51 and the second wire 52 are made of a conductive material containing, for example, gold, copper, aluminum or the like.
  • the present disclosure is not limited to this, and the sensor element 10 and the control element 20 are electrically connected via two or less first wires 51 or four or more first wires 51.
  • the sensor element 10 and the external connection terminal 30 may be directly connected without passing through the circuit element.
  • the external connection terminal 30 corresponds to an electronic component.
  • the external connection terminal 30 is made of, for example, a conductive material containing copper, aluminum, iron or the like.
  • the external connection terminal 30 is electrically connected to the control element 20 via the second wire 52. Therefore, the external connection terminal 30 is electrically connected to the sensor element 10 via the second wire 52, the control element 20, and the first wire 51.
  • the external connection terminal 30 is a terminal for electrically connecting the control element 20 and an external element provided outside the sealing resin portion 40.
  • the external element can also be said to be an electronic device provided separately from the semiconductor device 100.
  • the external connection terminal 30 includes, for example, a portion having a rectangular shape. And one surface (surface) of external connection terminal 30 is terminal surface S31 as a component surface.
  • the example provided with the four external connection terminals 30 is employ
  • the present disclosure is not limited thereto, and may include three or less external connection terminals 30 or four or more external connection terminals 30.
  • the sealing resin portion 40 is made of, for example, an electrically insulating resin such as a silicone resin or an epoxy resin.
  • the sealing resin portion 40 seals and integrally holds the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, and the second wire 52. As described above, since the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, and the second wire 52 are sealed by the sealing resin portion 40, they can be said to be sealed components.
  • the sealing resin portion 40 has one surface (first surface) S1 and the opposite surface (second surface) S2 of the one surface S1, and has, for example, a rectangular parallelepiped shape.
  • One surface S1 and the opposite surface S2 are, for example, flat surfaces.
  • the sealing resin portion 40 has the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, the second wire in a state where the semiconductor surface S11, the element surface S21 and the terminal surface S31 are exposed to the one surface S1 side. 52 is sealed.
  • the semiconductor device 100 has a sealing structure in which the semiconductor surface S11, the element surface S21, and the terminal surface S31 are exposed in the same direction.
  • the sensor element 10 is covered with the sealing resin portion 40 in a state where the other surface excluding the semiconductor surface S11 is in contact with the sealing resin portion 40.
  • the control element 20 and the external connection terminal 30 The same applies to the control element 20 and the external connection terminal 30.
  • the first wire 51 is covered with the sealing resin portion 40 in a state in which the other portions excluding the connection portion between the sensor element 10 and the control element 20 are in contact with the sealing resin portion 40.
  • the one surface S1, the semiconductor surface S11, the element surface S21, and the terminal surface S31 are flush with each other. That is, it can be said that the semiconductor surface S11, the element surface S21, and the terminal surface S31 are provided on an imaginary plane passing through the one surface S1.
  • the present disclosure is not limited thereto, and the surfaces S11, S21, and S31 may not be flush. That is, each surface S11, S21, S31 may not be a flat surface.
  • the semiconductor surface S11, the element surface S21, and the terminal surface S31 are exposed on the one surface S1 side.
  • the present disclosure is not limited to this, as long as at least the semiconductor surface S11 and the terminal surface S31 are exposed on the one surface S1 side.
  • the detection sensitivity of the sensor element 10 is higher than when the semiconductor surface S11 is covered with the sealing resin portion 40 or the like. Can be improved. Further, in the semiconductor device 100, since the terminal surface S31 is exposed from the sealing resin portion 40, electrical connection with an external element can be easily performed.
  • the sealing resin portion 40 integrally holds the sensor element 10, the control element 20, and the external connection terminal 30 without using a lead frame or an adhesive.
  • the sealing resin portion 40 also holds the first wire 51 and the second wire 52 together with these. Therefore, it can be said that the sealing resin portion 40 has a function of protecting the sensor element 10, the control element 20, etc. from impact, temperature, humidity, light and a function of holding the sensor element 10, the control element 20, etc. .
  • the sensor element 10, the control element 20, and the external connection terminal 30 are mechanically connected by the sealing resin portion 40 without interposing the lead frame. That is, the sensor element 10, the control element 20, and the external connection terminal 30 are fixed by the sealing resin portion 40 without the lead frame.
  • the sealing resin portion 40 has a function as a joint for integrating the sensor element 10, the control element 20, and the external connection terminal 30.
  • the sealing resin part 40 has a function to integrate each of the components to be sealed.
  • a method of manufacturing the semiconductor device 100 will be described with reference to FIG.
  • a manufacturing method in which a plurality of semiconductor devices 100 are taken is employed.
  • the disclosed method is not limited to this.
  • a support 200 In this manufacturing method, a support 200, an adhesive film 210, and a dicing blade 300 are used.
  • the support 200 is a member that supports the sensor element 10, the control element 20, and the external connection terminal 30 via the adhesive film 210.
  • the support 200 is a flat plate-shaped member configured to include, for example, stainless steel and the like, and includes a flat affixing surface to which the adhesive film 210 is attached.
  • the constituent material of the support 200 is not particularly limited. However, in the peeling process described later, in the case where the adhesive film 210 is peeled by UV irradiation, the support 200 is made of a material that transmits UV.
  • the adhesive film 210 can employ a heat-resistant adhesive tape or a UV curable film.
  • the adhesive film 210 has such heat resistance that it can be used at the temperature at the sealing step.
  • the adhesive film 210 also affects the mounting of the sensor element 10 on the adhesive film 210 and the wire bonding property so that the sealing resin portion 40 does not exude on the adhesive surface of the sensor element 10 and the adhesive film 210. Have no characteristics.
  • the adhesive film 210 can be adhered so as to be lightly peeled off from the one surface S1, the semiconductor surface S11, the element surface S21, and the terminal surface S31.
  • the light peeling indicates a state in which the adhesive film 210 does not remain on the sealing resin portion 40 when the adhesive film 210 is peeled from the state of being adhered to the sealing resin portion 40.
  • light peeling is also a state of adhering to the sealing resin portion 40 at 100 mN / 25 mm or less.
  • the dicing blade 300 is a dividing tool for dividing the sealing structure in which the plurality of semiconductor devices 100 are integrated into the individual semiconductor devices 100.
  • the bonding step, the mounting step, the sealing step, the peeling step, and the dicing step are performed in this order.
  • the adhesive film 210 is attached to the surface to be attached of the support 200. At this time, the adhesive film 210 is attached so that the surface opposite to the surface to be attached is lightly peeled off as described above.
  • the sensor element 10 and the control are controlled such that the surfaces S11, S21, and S31 contact the adhesive film 210 on the support 200 provided with the adhesive film 210.
  • the element 20 and the external connection terminal 30 are disposed. That is, in the mounting process, the sensor element 10, the control element 20, and the external connection terminal 30 are disposed on the adhesive film 210, and the surfaces S11, S21, and S31 are adhered to the adhesive film 210. In other words, in the mounting process, the surfaces S11, S21, and S31 are directly adhered to the adhesive film 210. Further, in this mounting step, it can be said that the sensor element 10, the control element 20 and the external connection terminal 30 are temporarily fixed by the adhesive film 210.
  • the sensor element 10 may be disposed on the adhesive film 210 in a state where a water repellent film is applied to the semiconductor surface S11.
  • adhesion of the adhesive film 210 to the detection surface of the semiconductor surface S11 can be further suppressed.
  • the adhesive film 210 adheres to the semiconductor surface S11 so as to be lightly peeled off.
  • the adhesive film 210 remains on the semiconductor surface S11 when it is peeled off from the semiconductor surface S11. Therefore, in the mounting process, the use of the water repellent film can further suppress the adhesive film 210 from remaining on the detection surface of the sensor element 10.
  • the sensor element 10 bonded to the adhesive film 210, the control element 20, and the external connection terminal 30 are electrically connected. That is, in the mounting process, the sensor element 10 and the control element 20 are electrically connected by the first wire 51, and the control element 20 and the external connection terminal 30 are electrically connected by the second wire 52. As described above, in the mounting step, the sensor element 10 and the control element 20, and the control element 20 and the external connection terminal 30 are electrically and mechanically connected by bonding the first wire 51 and the second wire 52 by wire bonding. .
  • the 1st wire 51 and the 2nd wire 52 can control the heat influence to adhesion film 210 by using the wire which has aluminum as a main component. That is, when the first wire 51 and the second wire 52 use a wire containing aluminum as a main component, it is possible to suppress the occurrence of a defect in the adhesive film 210 due to the heat at the time of wire bonding.
  • a support 200 is used in order to facilitate handling after wire bonding. Therefore, when the adhesive film 210 can be disposed on a flat surface such as a support and the steps after the mounting step can be performed, the support 200 and the attaching step are not necessary. In other words, when there is a mechanism for fixing the adhesive film 210 on the equipment side, the support 200 is not necessary.
  • the sealing resin portion 40 As shown in the third step from the top of FIG. 3, after the mounting step, in the sealing resin portion 40, the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, and the second
  • the sealing structure is manufactured by sealing integrally with the wire 52.
  • a mold having a cavity corresponding to the outer shape of the sealing resin portion 40 is used.
  • a mold is installed so that the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, and the second wire 52 are disposed in the cavity.
  • the sealing resin portion 40 is formed by filling the constituent material of the sealing resin portion 40 in the cavity. Therefore, the sealing resin part 40 can also be said to be mold resin.
  • the adhesive film 210 is peeled from the sealing structure to separate the sealing structure and the support 200.
  • the adhesive film 210 adheres to the one surface S1 or the like so as to be lightly peeled off.
  • the sealing is performed by applying a force to any one of the sealing structure and the support 200 so as to separate the sealing structure and the support 200 to which the adhesive film 210 is attached.
  • the adhesive film 210 can be peeled off from the fastening structure.
  • the peeling step when a UV cured film is used as the adhesive film 210, the adhesive force of the adhesive film 210 is reduced by irradiating UV light from the surface opposite to the surface to be attached in the support 200. And in a peeling process, after reducing the adhesive force of the adhesive film 210, the adhesive film 210 is peeled from a sealing structure.
  • the peeling method of the adhesive film 210 is not limited to this, For example, even if the adhesive force of the adhesive film 210 is reduced by foaming the adhesive film 210 and the adhesive film 210 is peeled from the sealing structure. Good.
  • the sealing structure is divided into a plurality of semiconductor devices 100 using a dicing blade 300 after the peeling step.
  • a dicing process is unnecessary.
  • the semiconductor device 100 As described above, in the semiconductor device 100, the sensor element 10, the control element 20, the external connection terminal 30, the first wire 51, and the second wire 52 are held by the sealing resin portion 40. Therefore, the semiconductor device 100 does not require a lead frame on which a sensor element (sensor chip) as described in Patent Document 1 is mounted, an adhesive for mechanically connecting the lead frame and the sensor element, and the like. Can be reduced. In addition, since the semiconductor device 100 does not have a lead frame, the physical size can be made smaller than in the case of using a lead frame.
  • the semiconductor device when the sensor element is mounted on the lead frame through the adhesive, the semiconductor device needs to secure the bonding margin for the mounting accuracy and for the adhesive due to the mounting accuracy, so the volume of the sealing resin portion increases accordingly.
  • the volume of the sealing resin portion 40 can be smaller than in the case of using a lead frame. For this reason, the semiconductor device 100 can reduce the stress due to the difference in linear expansion coefficient between the sensor element 10 and the sealing resin portion 40.
  • the semiconductor device 100 as described above can be manufactured. Furthermore, in the present manufacturing method, it is not necessary to press the mold against the semiconductor surface S11 exposed from the sealing resin portion 40 in the sensor element 10. For this reason, in the present manufacturing method, the stress applied to the sensor element 10 at the time of manufacturing can be reduced and the breakage can be suppressed as compared with the case where the mold is pressed against the sensor element 10.
  • the semiconductor device 110 according to the second embodiment and the method for manufacturing the semiconductor device 110 will be described with reference to FIGS. 4, 5 and 6. Here, differences from the first embodiment will be mainly described.
  • the same reference numerals are given to the same portions as the semiconductor device 100.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 110 differs from the semiconductor device 100 in the shape of the sealing resin portion 41.
  • the planar shape of the semiconductor device 110 as viewed from the opposite surface S2 is the same as that of the semiconductor device 100.
  • the sealing resin portion 41 is provided with the recess 41 a. That is, the sealing resin portion 41 is provided with a recessed portion 41a which is recessed from the one surface S1 to a position reaching the semiconductor surface S11, the element surface S21, and the terminal surface S31.
  • the semiconductor device 110 is provided with a bottomed hole whose bottom surface is each surface S11, S21, and S31 in the sealing resin portion 41.
  • the semiconductor device 110 includes the sealing resin portion 41 in which the periphery of each of the surfaces S11, S21, and S31 protrudes more than each of the surfaces S11, S21, and S31. Therefore, in the semiconductor device 110, a portion protruding from the terminal surface S31, which is a part of the sealing resin portion 41, is provided between the plurality of external connection terminals 30. That is, between the adjacent terminal surfaces S31, the protruding portions of the sealing resin portion 41 are interposed.
  • the concave portion 41 a is surrounded by four continuous wall surfaces of the sealing resin portion 41 corresponding to the planar shapes of the surfaces S 11, S 21, and S 31.
  • the semiconductor device 110 has a structure in which four continuous wall surfaces of the sealing resin portion 41 forming the concave portion 41a and five surfaces of the semiconductor surface S11 are exposed. This point is the same with respect to the locations of the element surface S21 and the terminal surface S31. As described above, in the semiconductor device 110, the surfaces S11, S21, and S31 are not flush with the one surface S1.
  • the opening area may be narrowed from each surface 41 to each surface S11, S21, S31 from the one surface S1.
  • the recess 41a facing the semiconductor surface S11 have such an opening area.
  • the adhesive film 220 is attached to the surface to be attached of the support 200. At this time, the adhesive film 220 is attached such that the surface opposite to the surface to be attached is lightly peeled off as described above. Furthermore, in the present manufacturing method, an adhesive film 220 matched to the shape of the recess 41 a is used. That is, in the affixing step, the adhesive film 220 having a thickness corresponding to the depth of the concave portion 41a is provided only in the portion facing the surfaces S11, S21, and S31.
  • the adhesive film 220 can be made to conform to the shape of the recess 41 a by partially removing the adhesive film 220 while the sheet-like adhesive film 220 is attached to the support 200, for example. In the bonding step, a plurality of adhesive films 220 conforming to the shape of the recess 41 a may be bonded onto the support 200.
  • the sensor element 10 and the control are controlled such that the surfaces S11, S21 and S31 are in contact with the adhesive film 220 on the support 200 provided with the adhesive film 220.
  • the element 20 and the external connection terminal 30 are disposed. That is, in the disposing step, the sensor element 10, the control element 20, and the external connection terminal 30 are disposed on the adhesive film 220, and the surfaces S11, S21, and S31 are adhered to the adhesive film 220.
  • a bonding process is performed.
  • the bonding process is the same as the process described in the mounting process of the first embodiment.
  • the placement step and the bonding step are described as separate steps. However, the placement process and the bonding process correspond to the mounting process.
  • the sealing resin portion 41 is formed by filling the constituent material of the sealing resin portion 41 into the cavity of the mold.
  • the sealing process is the same as in the first embodiment.
  • the adhesive film 220 is provided only on the portion facing the surfaces S11, S21, and S31. For this reason, the sealing resin portion 41 is also formed around the respective adhesive films 220.
  • the peeling step shown in the fourth row from the top of FIG. 6 and the dicing step shown in the fifth row from the top of FIG. 6 are the same as in the first embodiment, and therefore the first embodiment can be referred to.
  • the semiconductor device 110 can exhibit the same effects as the semiconductor device 100. Furthermore, in the semiconductor device 110, a portion protruding from the terminal surface S31, which is a part of the sealing resin portion 41, is provided between the plurality of external connection terminals 30, so the plurality of external connection terminals 30 are shorted. Can be suppressed.
  • the semiconductor device 110 when the detection target of the sensor element 10 is a fluid, the fluid is supplied to the sensor element 10 because the opening area of the recess 41a narrows from the one surface S1 toward the semiconductor surface S11. It will be easier. Therefore, the semiconductor device 110 can improve detection accuracy as compared to the case where the recess 41a is not provided.
  • the present manufacturing method can exhibit the same effects as the method of manufacturing the semiconductor device 100. Furthermore, this manufacturing method can form the recessed part 41a easily by performing a sealing process using the adhesive film 220 corresponding to the shape of the recessed part 41a.
  • the recess 41 a is formed using the shape of the adhesive film 220 .
  • the present disclosure is not limited to this, and the recess 41 a may be formed by removing the sealing resin portion 41 with a laser or the like.
  • the semiconductor device 120 of the third embodiment and a method of manufacturing the semiconductor device 120 will be described with reference to FIGS. 7 and 8. Here, differences from the first embodiment will be mainly described.
  • the same portions as those of the semiconductor device 100 are denoted by the same reference numerals.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 120 differs from the semiconductor device 100 in the electrical connection structure between the sensor element 10 and the control element 20, and between the control element 20 and the external connection terminal 30. As shown in FIG. 7, the control element 20 is stacked on the sensor element 10 and the external connection terminal 30. The control element 20 is opposed to a part of the sensor element 10 in the direction orthogonal to the one surface S1, and is opposed to the external connection terminal 30.
  • the control element 20 is electrically connected to the sensor element 10 via the first bump 53. Also, the control element 20 is electrically connected to the external connection terminal 30 via the second bump 54.
  • the control element 20 is mounted in a state of being stacked on the sensor element 10 and the external connection terminal 30 via the first bump 53 and the second bump 54. And the control element 20 is covered by the sealing resin part 40 in the state mounted in this way.
  • the first bumps 53 and the second bumps 54 correspond to connection members. Further, the first bumps 53 and the second bumps 54 contain, for example, a conductive member such as gold or silver as a main component. The constituent material of the first bump 53 and the second bump 54 may be selected according to the heat resistant temperature of the adhesive film 210.
  • the semiconductor surface S11 and the terminal surface S31 are exposed on the one surface S1 side. That is, in the semiconductor device 120, the element surface S21 is not exposed to the one surface S1 side.
  • the control element 20 is sealed by the sealing resin portion 40 without being exposed from the sealing resin portion 40.
  • the attaching process is the same as that of the first embodiment, as shown in the first row from the top of FIG.
  • the sensor element 10 and the external connection terminal 30 are mounted on the adhesive film 210.
  • the control element 20 is not mounted on the adhesive film 210.
  • the control element 20 is mounted on the sensor element 10 and the external connection terminal 30 via the first bump 53 and the second bump 54.
  • the control element 20 and the sensor element 10 are electrically connected by the first bump 53
  • the control element 20 and the external connection terminal 30 are electrically connected by the second bump 54.
  • the placement process and the flip chip bonding process are described as separate processes. However, the placement process and the flip chip bonding process correspond to the mounting process.
  • the sealing step, the peeling step, and the dicing step are performed as in the first embodiment.
  • the semiconductor device 120 can exhibit the same effects as the semiconductor device 100. Furthermore, in the semiconductor device 120, since the control element 20 is stacked on the sensor element 10 and the external connection terminal 30, the physical size in the direction of the surface S1 can be smaller than that of the semiconductor device 100. In addition, since the semiconductor device 120 is covered with the sealing resin portion 40 without exposing the control element 20, the protection performance of the control element 20 can be improved more than the semiconductor device 100. That is, the semiconductor device 120 can protect the control element 20 from shock, temperature, humidity, and light more easily than the semiconductor device 100. The present manufacturing method can exhibit the same effects as those of the first embodiment.
  • the third embodiment can also be implemented in combination with the second embodiment. That is, in the semiconductor device 120, the recess 41a may be provided in a portion facing the semiconductor surface S11 and the terminal surface S31. Thus, the semiconductor device 120 can exhibit the same effects as the semiconductor device 110.
  • the semiconductor device 130 according to the fourth embodiment will be described with reference to FIG. Here, differences from the first embodiment will be mainly described.
  • the same reference numerals are given to the same portions as the semiconductor device 100.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 130 differs from the semiconductor device 100 in the shape of the sealing resin portion 42.
  • the sealing resin portion 42 has a shape in which other portions are also exposed. That is, the sealing resin portion 42 has a side surface connected to the one surface S1 and the opposite surface S2. Further, a part of the sensor element 10 including the sensing part 11 is provided so as to protrude from the side surface of the sealing resin part 42.
  • the sealing resin portion 42 is formed to cover the other portion of the sensor element 10 except the semiconductor surface S11, and then the sensor is detected by a laser or the like. It can manufacture by removing the sealing resin part 42 on the element 10.
  • the semiconductor device 130 can exhibit the same effects as the semiconductor device 100. Furthermore, in the semiconductor device 130, since a portion including the sensing unit 11 of the sensor element 10 protrudes from the side surface of the sealing resin portion 42, stress caused by the difference in linear expansion coefficient between the sensor element 10 and the sealing resin portion 42 is sensed The application to the unit 11 can be suppressed. Therefore, the semiconductor device 130 can improve detection accuracy more than the semiconductor device 100.
  • the fourth embodiment can also be implemented in combination with the second to third embodiments.
  • the semiconductor device 130 can exhibit the same effects as the semiconductor devices 110 to 120.
  • the semiconductor device 140 according to the fifth embodiment will be described with reference to FIG. Here, differences from the first embodiment will be mainly described.
  • the same portions as those of the semiconductor device 100 are denoted by the same reference numerals.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 140 differs from the semiconductor device 100 in the shape of the sealing resin portion 43. As shown in FIG. 10, the sealing resin portion 43 has a shape in which the control element 20 is not exposed.
  • the sensor element 10, the control element 20, and the external connection terminal 30 are arranged side by side in a direction parallel to the one surface S1. That is, the sensor element 10, the control element 20, and the external connection terminal 30 are disposed such that the surfaces S11, S21, and S31 are flush with each other.
  • the sealing resin portion 43 is provided on the surface S1 side and the opposite surface S2 side in the control element 20. That is, the sealing resin portion 43 includes, at a portion facing the element surface S21 of the control element 20, a portion protruding from the semiconductor surface S11 and the terminal surface S31.
  • the sealing resin portion 43 covers the control element 20 without exposing the control element 20 to the outside. Further, similarly to the sealing resin portion 40, the sealing resin portion 43 may include a portion projecting between the external connection terminals 30. Furthermore, as shown by a broken line circle in FIG. 10, the resin or resin sheet may be covered so that stress does not concentrate on the end of the sensor element 10 or the like.
  • the interface between the sensor element 10 and the control element 20 and the sealing resin portion 43 in the shearing direction The stress may be reduced.
  • the semiconductor device 140 can be manufactured by arranging the adhesive film 210 only at the position facing the semiconductor surface S11 and the position facing the terminal surface S31 and performing the sealing process.
  • the semiconductor device 140 can exhibit the same effects as the semiconductor devices 100 and 120. Furthermore, the semiconductor device 140 can also be employed as the surface mount control element 20. Further, in the semiconductor device 140, the protrusion of the sealing resin portion 43 is provided at a portion facing the control element 20, so the difference in linear expansion coefficient between the sensor element 10 or the control element 20 and the sealing resin portion 43 is It is possible to suppress the accompanying deformation.
  • the fifth embodiment can also be implemented in combination with the second to fourth embodiments.
  • the semiconductor device 140 can achieve the same effects as the semiconductor devices 110 to 130.
  • the semiconductor device 140 has the semiconductor surface S11 and the terminal surface S31 in the sealing resin portion 43 around the semiconductor surface S11 and between the plurality of external connection terminals 30. A more prominent part is provided.
  • the semiconductor device 150 according to the sixth embodiment will be described with reference to FIGS. 11 and 12. Here, differences from the first embodiment will be mainly described.
  • the same parts as those of the semiconductor device 100 are denoted by the same reference numerals.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 150 differs from the semiconductor device 100 in the shape of the sealing resin portion 44.
  • the sealing resin portion 44 has a shape in which the external connection terminal 30 protrudes from the side surface.
  • the sealing resin portion 44 has a side surface connected to the one surface S1 and the opposite surface S2. A part of the external connection terminal 30 is provided to protrude from the side surface of the sealing resin portion 44.
  • the sealing resin portion 44 is formed so as to cover the other portions of the external connection terminal 30 except the terminal surface S31, and then the laser is used.
  • the sealing resin portion 44 on the external connection terminal 30 is removed. Furthermore, as shown in FIG. 12, manufacturing can be performed by cutting the external connection terminal 30 in the dicing step.
  • the semiconductor device 150 may remove the sealing resin portion 44 on the external connection terminal 30 after the dicing process. As described above, by simultaneously cutting the sealing resin portion 44 and the external connection terminal 30 in the dicing step, it is possible to suppress the damage between the sealing resin portion 44 and the external connection terminal 30 and the deformation of the external connection terminal 30.
  • the semiconductor device 150 can exhibit the same effects as the semiconductor device 100. Furthermore, since the external connection terminal 30 protrudes from the side surface of the sealing resin portion 44, the semiconductor device 150 can be easily connected to external elements of various connection forms. The present manufacturing method can exhibit the same effects as those of the first embodiment.
  • the sixth embodiment can also be implemented in combination with each of the third to fifth embodiments.
  • the semiconductor device 150 can exhibit the same effects as the semiconductor devices 110 to 140.
  • the semiconductor device 160 according to the seventh embodiment is described with reference to FIG. Here, differences from the first embodiment will be mainly described.
  • the same reference numerals are given to the same portions as the semiconductor device 100.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • the semiconductor device 160 does not include the control element 20.
  • the sensor element 10 and the external connection terminal 31 are directly connected by the wire 55.
  • the semiconductor surface S11 and the terminal surface S31 are exposed on the one surface S1 side.
  • the external connection terminal 31 having a bent shape is adopted.
  • the external connection terminal 31 protrudes from the side surface of the sealing resin portion 44 while the terminal surface S31 is exposed to the one surface S1 side.
  • the semiconductor device 160 configured in this way can achieve the same effects as the semiconductor device 100.
  • the seventh embodiment can be implemented in combination with each of the first, second, fourth and sixth embodiments. That is, even in these embodiments, even if the control element 20 is not included, the effects of the above-described embodiments can be obtained. Further, the external connection terminal 31 can be applied to the first to sixth embodiments and the embodiments described below.
  • the semiconductor device 170 of the eighth embodiment will be described with reference to FIGS. 14 and 15. Here, differences from the first embodiment will be mainly described.
  • the same reference numerals are given to the same portions as the semiconductor device 100.
  • the components denoted by the same reference numerals as those of the semiconductor device 100 can be applied with reference to the above embodiment.
  • a member 60 such as silicone gel or rubber having a lower elastic modulus than the sealing resin portion 45 is provided between the sensor element 10 and the sealing resin portion 45. That is, the sealing resin portion 45 is provided so as to cover the stress relieving member 60. Furthermore, as shown in FIG. 14, the semiconductor device 170 is provided with a capacitor 70 across different external connection terminals 31.
  • the capacitor 70 is electrically connected to the external connection terminal 31 having different terminals via, for example, a conductive paste. A silver paste etc. are employable as a conductive paste. However, the semiconductor device 170 may not be provided with the capacitor 70.
  • the sensor element 10 provided with the sensing unit 11 having a diaphragm structure is employed.
  • an example in which the gel member 60 is provided on the sensing unit 11 is employed.
  • the semiconductor device 170 can exhibit the same effects as the semiconductor device 100. Furthermore, in the present manufacturing method, up to the mounting step is performed as in the first embodiment. Thereafter, in the present manufacturing method, the capacitor 70 is disposed on the external connection terminal 31 via the conductive paste. Then, the conductive paste is cured to mount the capacitor 70 on the external connection terminal 31. That is, the external connection terminal 31 and the capacitor 70 are electrically and mechanically connected. The step of mounting the capacitor 70 can also be regarded as part of the mounting step.
  • the stress relieving member 60 is applied to the sensor element 10, and the stress relieving member 60 is cured. And in this manufacturing method, after hardening stress relieving member 60, the process after the above-mentioned sealing process is performed. Thus, the semiconductor device 170 can be manufactured.
  • the semiconductor device 170 can exhibit the same effects as the semiconductor device 100. Furthermore, the semiconductor device 170 can suppress application of stress due to a difference in linear expansion coefficient between the sensor element 10 and the sealing resin portion 45 to the sensor element 10, particularly to the sensing portion 11, thereby protecting the sensor element 10. Can. Therefore, the semiconductor device 170 can reduce the influence of the sensor characteristic fluctuation more than the case where the stress relaxation member 60 is not provided.
  • the present manufacturing method can exhibit the same effects as those of the first embodiment.
  • the eighth embodiment can also be implemented in combination with each of the second to seventh embodiments.
  • the semiconductor device 170 can exhibit the same effects as the semiconductor devices 110 to 160.
  • the capacitor 70 can be adopted in other embodiments.
  • the ninth embodiment will be described with reference to FIG.
  • the case plug includes a sensor housing 510 and a connector case 520.
  • the case plug is a member for performing connection with the pipe 400 through which a fluid to be detected by the sensor element 10 flows, and connection between the external connection terminal 30 and the external element.
  • the sensor element 10 employs, as an example, a sensor that detects the temperature of the fluid.
  • the sensor housing 510 is a portion connected to or attached to the mounting port 410 of the pipe 400. One open end of the sensor housing 510 is attached to the attachment port 410, and the connector case 520 is attached to the other open end.
  • the connector case 520 is attached with the semiconductor device 150, and includes a connector terminal electrically connected to the external connection terminal 30, and a holding portion for holding the connector terminal. Further, the sensor housing 510 and the connector case 520 are assembled via a close contact member such as an O-ring.
  • the semiconductor device 150 is attached to the connector case 520 by press fitting or the like.
  • the temperature response improves as the sensor element 10 is closer to the fluid to be detected.
  • the semiconductor device 150 since the semiconductor device 150 does not mount the sensor element 10 on the lead frame, the position of the sensor element 10 does not depend on the lead frame. Therefore, the semiconductor device 150 can arbitrarily determine the position of the sensor element 10. Therefore, the semiconductor device 150 can easily adjust the position of the sensor element 10 with respect to the fluid to be detected.
  • the position here is the position in the direction of the double arrow in FIG.
  • the semiconductor device 150 is adopted as an example.
  • the present disclosure is not limited to this, and other semiconductor devices 100 to 140 and 160 to 170 can be adopted.
  • the semiconductor device 180 according to the tenth embodiment will be described with reference to FIGS. 17, 18 and 19. Here, differences from the eighth embodiment and the like will be mainly described.
  • the same portions as those of the semiconductor device 170 are denoted by the same reference numerals.
  • the components denoted by the same reference numerals as the semiconductor device 170 can be applied with reference to the eighth embodiment.
  • the sensor element 10 is illustrated in a simplified manner.
  • the above embodiment can be applied unless otherwise noted.
  • the semiconductor device 180 mainly differs from the semiconductor device 170 in the configuration of the sealing resin portion 46. Although the semiconductor device 180 is not provided with the capacitor 70, the capacitor 70 may be provided.
  • the semiconductor device 180 includes an external connection terminal 31, which is a part of a lead frame, a mounting portion 32, and a bonding holding member 33.
  • the control element 20 is mounted on the mounting portion 32 and sealed by the sealing resin portion 46.
  • the control element 20 is mechanically connected to the mounting portion 32 via an adhesive.
  • the bonding holding member 33 corresponds to a holding member, is connected to a portion of the semiconductor surface S11 which is not exposed from the sealing resin portion 46, and is sealed by the sealing resin portion 46.
  • the sensor element 10 is mechanically connected to the bonding holding member 33 via the adhesive 80.
  • the bonding holding member 33 is provided to hold the sensor element 10 when the first wire 51 is bonded to the sensor element 10.
  • the present disclosure may not include the bonding holding member 33. That is, the present disclosure may not include the lead frame on which the sensor element 10 is mounted.
  • the first wire 51 is electrically connected to the projection area of the bonding holding member 33 on the semiconductor back surface S12. In other words, the first wire 51 is electrically connected to a region of the semiconductor back surface S12 that overlaps the bonding holding member 33.
  • the sealing resin portion 46 integrally holds the sensor element 10, the control element 20, and the first wire 51 in a state where a part of the sensor element 10 is exposed to the one surface S1 side. Further, the sealing resin portion 46 integrally seals the stress relieving member 60, the mounting portion 32, the bonding holding member 33, a part of the external connection terminal 31, and the adhesive 80. That is, the sealing resin portion 46 holds the sensor element 10, the control element 20, the first wire 51, the stress relieving member 60, the mounting portion 32, and the bonding in a state where a part of the sensor element 10 is exposed to the one surface S1 side. The member 33, a part of the external connection terminal 31, and the adhesive 80 are integrally sealed.
  • the sealing resin portion 46 the stress applied to the sensor element 10 from the portion provided on the semiconductor surface S11 side and the stress applied to the sensor element 10 from the portion provided on the semiconductor back surface S12 side are equal. It is provided to be That is, in the semiconductor device 180, the sealing resin portion 46 is provided to balance the stress applied to the sensor element 10 from the semiconductor surface S11 side and the stress applied to the sensor element 10 from the semiconductor back surface S12 side. ing.
  • the sealing resin portion 46 is provided, for example, such that the distance B between the semiconductor surface S11 and the first surface S1 is equal to the distance A between the semiconductor back surface S12 and the opposite surface S2.
  • the distance B can be said to be the length from the semiconductor surface S11 to the one surface S1.
  • the distance A can be said to be the length from the semiconductor back surface S12 to the opposite surface S2.
  • the length is a length along an imaginary straight line orthogonal to the semiconductor surface S11 or the like. Therefore, it can be said that in the semiconductor device 180, the thickness from the semiconductor surface S11 to the one surface S1 is equal to the thickness from the semiconductor back surface S12 to the opposite surface S2.
  • the semiconductor device 180 is provided with the gel member 60. That is, the semiconductor device 180 includes the stress relieving member 60 having a smaller linear expansion coefficient or elastic modulus than the sealing resin portion 46 between the sensor element 10 and the sealing resin portion 46. Therefore, the semiconductor device 180 can exhibit the same effects as the semiconductor device 170.
  • the stress relieving member 60 be continuously provided on the semiconductor back surface S12 and on the side surface connected to the semiconductor back surface S12. More specifically, it is preferable that the stress relieving member 60 be continuously provided on the semiconductor back surface S12, the side surface of the tip of the sensor element 10, and other side surfaces.
  • the stress relaxation member 60 is provided on the projection area of the portion exposed from the sealing resin portion 46 of the sensor element 10 and the side surface connected to the area.
  • the projection area here is a part of the semiconductor back surface S12.
  • the semiconductor device 180 can further improve the effect of the stress relieving member 60. This point can also be applied to the eighth embodiment.
  • the attaching process is performed.
  • the support 34 which is a part of the lead frame is adopted. Therefore, in the present manufacturing method, the adhesive film 210 is attached to the support 34. In the attaching process, the adhesive film 210 is attached on the support 34, and the adhesive film 210 is not attached to the bonding holding member 33.
  • the sensor element 10 is disposed on the support 34 provided with the adhesive film 210 such that a part of the semiconductor surface S11 is in contact with the adhesive film 210. Further, in the mounting step, the sensor element 10 and the bonding holding member 33 are mechanically connected via the adhesive 80. Furthermore, in the mounting process, the sensor element 10 and the electronic component (here, the control element 20) are electrically connected via the first wire 51.
  • the control element 20 is mounted on the mounting unit 32 before being connected via the first wire 51.
  • the sensor element 10 is mechanically connected to the bonding holding member 33 before being connected via the first wire 51.
  • the sensor element 10 is mechanically connected to the bonding holding member 33, it is possible to prevent the sensor element 10 from being displaced when connecting the first wire 51.
  • the present manufacturing method it is possible to suppress that the sensor element 10 is lifted from the adhesive film 210 by the pressing force when the first wire 51 is connected. Therefore, in the present manufacturing method, it is possible to suppress the resin from entering between the adhesive film 210 and the sensor element 10 in the sealing step described later.
  • the coating process, the sealing process, and the peeling process are performed.
  • the sealing resin portion 46 is provided so as to be the semiconductor device 180 as described above. That is, in the sealing step, the stress applied to the sensor element 10 from the portion provided on the semiconductor surface S11 side in the sealing resin portion 46 and the sensor from the portion provided on the semiconductor back surface S12 side in the sealing resin portion 46 It is provided such that the stress applied to the element 10 is equal. By doing this, the semiconductor device 180 as described above can be manufactured.
  • the sealing resin portion 46 is provided such that the distance B between the semiconductor surface S11 and the first surface S1 and the distance A between the semiconductor back surface S12 and the opposite surface S2 are equal.
  • the gap between the semiconductor surface S11 and the one surface S1 and the gap between the semiconductor back surface S12 and the opposite surface S2 can be set by providing a step or the like in a mold for performing the sealing step. As a result, it is possible to manufacture the semiconductor device 180 in which the distance B between the semiconductor surface S11 and the one surface S1 and the distance A between the semiconductor back surface S12 and the opposite surface S2 are equal.
  • the sealing resin portion 46 is provided such that the stress applied to the sensor element 10 from the semiconductor surface S11 side and the stress applied to the sensor element 10 from the semiconductor back surface S12 are equal. ing. That is, in the sealing resin portion 46, the stress applied to the sensor element 10 from the portion provided on the semiconductor surface S11 side and the stress applied to the sensor element 10 from the portion provided on the semiconductor back surface S12 are equal. It is provided to be Thus, the stress here is a stress applied from the sealing resin portion 46 to the sensor element 10.
  • the semiconductor device 180 can suppress the distortion of the sensor element 10 as compared to the case where the stress from the semiconductor surface S11 side and the stress from the semiconductor back surface S12 are different.
  • the semiconductor device 180 can suppress warpage in the direction of the sensor element 10 with small stress. Therefore, the semiconductor device 180 can reduce the stress on the sensor element 10 compared to the case where the stress from the semiconductor surface S11 side and the stress from the semiconductor back surface S12 are different.
  • the semiconductor device 180 is provided such that the distance B between the semiconductor surface S11 and the first surface S1 is equal to the distance A between the semiconductor back surface S12 and the opposite surface S2.
  • the semiconductor device 180 the stress applied to the sensor element 10 from the portion provided on the semiconductor surface S11 side and the stress applied to the sensor element 10 from the portion provided on the semiconductor back surface S12 side And easy to equalize.
  • the semiconductor device 180 in which only a part of the semiconductor surface S11 is exposed from the sealing resin portion 46 is adopted.
  • the semiconductor device 180 is not limited to this, and in the same manner as the eighth embodiment, in addition to a part of the semiconductor surface S11, the component surface of the control element 20 and the external connection terminal 31 as an electronic component is a sealing resin portion 46 may be exposed to the one surface S1 side. That is, in the semiconductor device 180, the sensor element 10, the control element 20, the external connection terminal 31, and the first wire 51 may be held by the sealing resin portion 40 without providing the mounting portion 32 or the like.
  • the semiconductor device 180 does not require a lead frame on which a semiconductor element (sensor chip) as described in Patent Document 1 is mounted, an adhesive for mechanically connecting the lead frame and the semiconductor element, and the like. Can be reduced. Further, the semiconductor device 180 can be miniaturized as compared with the case of using a lead frame.
  • FIGS. 20 to 23 illustrate the state before the sealing resin portion is provided in order to make the shapes of the gel members 61 to 63 easy to understand.
  • the semiconductor device 181 is provided with a stress relieving member 61.
  • Many stress relieving members 61 are provided around the outer periphery of the sensor element 10. That is, in the stress relieving member 61, the supply amount around the outer periphery of the sensor element 10 is larger than that of the gel member 60. For this reason, in the stress relaxation member 61, in plan view from the semiconductor back surface S12 side, the portion corresponding to the outer contour of the sensor element 10 is provided in a shape projecting more than the periphery, that is, in an uneven shape.
  • the semiconductor device 182 is provided with a stress relieving member 62 as shown in FIG.
  • Many stress relieving members 62 are provided around the corner of the sensor element 10. That is, in the stress relieving member 62, the supply amount around the corner of the sensor element 10 is larger than that of the stress relieving member 60. For this reason, the stress relieving member 62 is provided in such a shape that a portion corresponding to the corner portion of the sensor element 10 protrudes from the periphery in a plan view from the semiconductor back surface S12 side.
  • the semiconductor device 183 is provided with a stress relieving member 63.
  • Many stress relieving members 63 are provided around the boundary between the sensor element 10 and the adhesive film 210.
  • many stress relieving members 63 are provided around the boundary of the projection area of the portion exposed from the sealing resin portion.
  • the supply amount around the boundary between the sensor element 10 and the adhesive film 210 is larger than that of the stress relieving member 60.
  • the stress relaxation member 63 in a plan view from the semiconductor back surface S12 side, a portion corresponding to the periphery of the boundary with the adhesive film 210 in the sensor element 10 is provided in a shape projecting more than the periphery.
  • the portion exposed from the sealing resin portion is a part of the semiconductor surface S11. Therefore, the projection area is a part of the semiconductor back surface S12.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteur (100) comprenant un élément capteur (10), un élément de commande (20) qui est électroconnecté à l'élément capteur (10), et une borne de connexion externe (30) qui connecte électriquement l'élément de commande (20) et un élément externe, qui est disposé à l'extérieur d'une partie de résine d'étanchéité, l'un à l'autre. Ce dispositif à semi-conducteur (100) comprend également un premier fil (51) qui connecte électriquement l'élément capteur (10) et l'élément de commande (20) l'un à l'autre, et un second fil (52) qui connecte électriquement l'élément de commande (20) et la borne de connexion externe (30) l'un à l'autre. Ce dispositif à semi-conducteur (100) comprend en outre une partie de résine d'étanchéité (40) qui a une première surface (S1) et une seconde surface (S2) et maintient d'un seul tenant l'élément capteur (10), l'élément de commande (20), la borne de connexion externe (30), le premier fil (51) et le second fil (52) dans un état dans lequel une surface semi-conductrice (S11), une surface d'élément (S21) et une surface de borne (S31) sont exposées à partir de la première surface (S1).
PCT/JP2018/025293 2017-07-24 2018-07-04 Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur WO2019021766A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880048844.XA CN110945645B (zh) 2017-07-24 2018-07-04 半导体装置及半导体装置的制造方法
DE112018003765.7T DE112018003765B4 (de) 2017-07-24 2018-07-04 Halbleitervorrichtung und verfahren zum herstellen der halbleitervorrichtung
US16/747,047 US11355357B2 (en) 2017-07-24 2020-01-20 Semiconductor device and method for producing the semiconductor device

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JP2017-142852 2017-07-24
JP2017142852 2017-07-24
JP2018-113061 2018-06-13
JP2018113061A JP6780675B2 (ja) 2017-07-24 2018-06-13 半導体装置及び半導体装置の製造方法

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012773A (ja) * 1996-06-24 1998-01-16 Matsushita Electron Corp 樹脂封止型半導体装置およびその製造方法
JP2002237565A (ja) * 2001-02-08 2002-08-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2010050323A (ja) * 2008-08-22 2010-03-04 Denso Corp 電子装置およびその製造方法
JP2011122984A (ja) * 2009-12-11 2011-06-23 Hitachi Automotive Systems Ltd 流量センサとその製造方法、及び流量センサモジュール
JP2014017367A (ja) * 2012-07-09 2014-01-30 Renesas Electronics Corp 半導体装置
JP2014187135A (ja) * 2013-03-22 2014-10-02 Toyota Motor Corp 半導体装置
JP2014197670A (ja) * 2013-03-07 2014-10-16 日東電工株式会社 半導体装置の製造方法及び熱硬化性樹脂シート
JP2015108517A (ja) * 2013-12-03 2015-06-11 株式会社デンソー モールドパッケージの製造方法
WO2016047130A1 (fr) * 2014-09-22 2016-03-31 旭化成エレクトロニクス株式会社 Capteur à effet hall et module de lentille
JP2016189360A (ja) * 2015-03-30 2016-11-04 株式会社フジクラ 半導体パッケージおよび圧力センサパッケージ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012773A (ja) * 1996-06-24 1998-01-16 Matsushita Electron Corp 樹脂封止型半導体装置およびその製造方法
JP2002237565A (ja) * 2001-02-08 2002-08-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2010050323A (ja) * 2008-08-22 2010-03-04 Denso Corp 電子装置およびその製造方法
JP2011122984A (ja) * 2009-12-11 2011-06-23 Hitachi Automotive Systems Ltd 流量センサとその製造方法、及び流量センサモジュール
JP2014017367A (ja) * 2012-07-09 2014-01-30 Renesas Electronics Corp 半導体装置
JP2014197670A (ja) * 2013-03-07 2014-10-16 日東電工株式会社 半導体装置の製造方法及び熱硬化性樹脂シート
JP2014187135A (ja) * 2013-03-22 2014-10-02 Toyota Motor Corp 半導体装置
JP2015108517A (ja) * 2013-12-03 2015-06-11 株式会社デンソー モールドパッケージの製造方法
WO2016047130A1 (fr) * 2014-09-22 2016-03-31 旭化成エレクトロニクス株式会社 Capteur à effet hall et module de lentille
JP2016189360A (ja) * 2015-03-30 2016-11-04 株式会社フジクラ 半導体パッケージおよび圧力センサパッケージ

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