WO2014129067A1 - Film de conversion de longueur d'onde, substrat de conversion de longueur d'onde, élément de conversion de longueur d'onde et élément d'affichage - Google Patents

Film de conversion de longueur d'onde, substrat de conversion de longueur d'onde, élément de conversion de longueur d'onde et élément d'affichage Download PDF

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Publication number
WO2014129067A1
WO2014129067A1 PCT/JP2013/083887 JP2013083887W WO2014129067A1 WO 2014129067 A1 WO2014129067 A1 WO 2014129067A1 JP 2013083887 W JP2013083887 W JP 2013083887W WO 2014129067 A1 WO2014129067 A1 WO 2014129067A1
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Prior art keywords
wavelength conversion
resin
conversion film
semiconductor quantum
quantum dots
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PCT/JP2013/083887
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English (en)
Japanese (ja)
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英行 神井
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Jsr株式会社
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Priority to JP2015501290A priority Critical patent/JP6304228B2/ja
Publication of WO2014129067A1 publication Critical patent/WO2014129067A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
    • C09K11/582—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a wavelength conversion film, a wavelength conversion substrate, a wavelength conversion element, and a display element.
  • quantum dots Very small particles formed to confine electrons are called quantum dots and have attracted attention in recent years.
  • the size of one quantum dot is several nanometers to several tens of nanometers in diameter, and is composed of about 10,000 atoms.
  • typical quantum dots are semiconductors made of II-V semiconductors such as CdSe (cadmium selenide), CdTe (cadmium telluride), and PbS. It is a quantum dot.
  • lead (Pb) is a material well known for its concern for toxicity.
  • cadmium (Cd) and its compounds are extremely toxic even at low concentrations, and are materials for which renal dysfunction and carcinogenicity are a concern. Therefore, there is a demand for the formation of semiconductor quantum dots made of a safer material.
  • a semiconductor quantum dot when a semiconductor quantum dot is to be applied to a solar cell panel, a lighting device, a display of a display element, or the like, there is a case where formation of a film composed of semiconductor quantum dots in the form of particles is required in order to use the fluorescence emission. . That is, the formation of a wavelength conversion film (wavelength conversion film) that exhibits fluorescence may be required.
  • Patent Document 1 As a method for forming a film using semiconductor quantum dots in the form of particles, for example, as shown in the Examples of Patent Document 1 and Patent Document 2, a method of directly forming a film of semiconductor quantum dots on an appropriate substrate It has been known. However, in such a method, the stability of the formed semiconductor quantum dot film is poor. In particular, there is concern about the binding property between the formed film and the substrate.
  • the resin material is used together with semiconductor quantum dots made of a safe material and is suitable for film formation.
  • an object of the present invention is to provide a highly stable wavelength conversion film having excellent fluorescence (wavelength conversion) characteristics including semiconductor quantum dots made of a safe material.
  • Another object of the present invention is to provide a highly stable wavelength conversion substrate having a wavelength conversion film having excellent fluorescence (wavelength conversion) characteristics including semiconductor quantum dots made of a safe material.
  • Another object of the present invention is to provide a highly stable wavelength conversion element having a wavelength conversion film having excellent fluorescence (wavelength conversion) characteristics including semiconductor quantum dots made of a safe material.
  • Another object of the present invention is to provide a display element including a semiconductor quantum dot made of a safe material and having a highly stable wavelength conversion film.
  • 1st aspect of this invention is related with the wavelength conversion film characterized by including a semiconductor quantum dot and resin.
  • the semiconductor quantum dot comprises: It is selected from the group consisting of InP / ZnS, CuInS 2 / ZnS and (ZnS / AgInS 2 ) solid solution / ZnS that are core-shell structure semiconductor quantum dots, and AgInS 2 and Zn-doped AgInS 2 that are homogeneous structure type semiconductor quantum dots At least one is preferred.
  • the resin is a cyclic polyolefin resin, an aromatic polyether resin, a polyimide resin, a fluorene polycarbonate resin, a fluorene polyester resin, a polycarbonate resin, a polyamide resin, or a polyarylate resin.
  • the semiconductor quantum dot is made of a material (A) having a fluorescence maximum in a wavelength region of 500 nm to 600 nm and / or a material (B) having a fluorescence maximum in a wavelength region of 600 nm to 700 nm. Is preferred.
  • a second aspect of the present invention relates to a wavelength conversion substrate comprising the wavelength conversion film of the first aspect of the present invention and a base material.
  • a third aspect of the present invention relates to a wavelength conversion element comprising the wavelength conversion film of the first aspect of the present invention.
  • a fourth aspect of the present invention relates to a display element comprising the wavelength conversion film of the first aspect of the present invention.
  • a wavelength conversion film having excellent wavelength conversion characteristics including a quantum dot made of a safe material and having high stability is provided.
  • a wavelength conversion substrate having a wavelength conversion film having excellent fluorescence (wavelength conversion) characteristics including a semiconductor quantum dot made of a safe material and having high stability.
  • a wavelength conversion element including a highly stable wavelength conversion film that includes a quantum dot made of a safe material.
  • a display element that includes a quantum dot made of a safe material and includes a highly stable wavelength conversion film.
  • the wavelength conversion film of the embodiment of the present invention includes a semiconductor quantum dot and a resin.
  • the semiconductor quantum dot contained in the wavelength conversion film of the embodiment of the present invention is a semiconductor quantum dot made of a safe material that does not contain Cd or Pb as a constituent component but contains In (indium) as a constituent component.
  • the resin contained in the wavelength conversion film of the embodiment of the present invention is suitable for constituting a wavelength conversion film that exhibits excellent fluorescence characteristics, that is, excellent wavelength conversion characteristics, using the semiconductor quantum dots. Resin.
  • the semiconductor particle dots and the resin contained in the wavelength conversion film of the embodiment of the present invention will be described.
  • the semiconductor quantum dots contained in the wavelength conversion film according to the embodiment of the present invention are composed of elements represented by Group 2 element, Group 11 element, Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element.
  • a semiconductor quantum dot made of a compound containing at least two elements selected from the group is preferable.
  • elements such as Pb and Cd which are of great concern for human safety, are excluded, and Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), Ba (Barium), Cu (copper), Ag (silver), gold (Au), zinc (Zn), B (boron), Al (aluminum), Ga (gallium), In (indium), Tl (thallium), C (Carbon), Si (silicon), Ge (germanium), Sn (tin), N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth), O (oxygen), S (Sulfur), Se (selenium), Te (tellurium), and a semiconductor quantum dot which consists of a compound containing at least 2 or more types of elements chosen from Po (polonium) group are preferable.
  • the semiconductor quantum dots are composed of a compound (A) having a fluorescence maximum in a wavelength region of 500 nm to 600 nm and / or a compound (B) having a fluorescence maximum in a wavelength region of 600 nm to 700 nm.
  • the semiconductor quantum dot is composed of the compound (A) and / or the compound (B) having such a fluorescence emission characteristic, and thereby has a fluorescence maximum in a wavelength region of 500 nm to 600 nm and / or a wavelength region of 600 nm to 700 nm. Can have.
  • the semiconductor quantum dots can constitute a wavelength conversion film suitable for the structure of a display element that displays an image using light in the visible range.
  • the semiconductor quantum dots contained in the wavelength conversion film of the embodiment of the present invention are semiconductor quantum dots made of a compound containing In as a constituent component.
  • the semiconductor quantum dot contained in the wavelength conversion film of the embodiment of the present invention is at least one structural type selected from a homogeneous structural type composed of one compound and a core-shell structural type composed of two or more compounds.
  • the semiconductor quantum dot is preferably used.
  • Core-shell structure type semiconductor quantum dots are formed by forming a core structure with one kind of compound and covering the periphery of the core structure with another compound. For example, by covering the core semiconductor with a semiconductor having a larger band gap, excitons (electron-hole pairs) generated by photoexcitation are confined in the core. As a result, the probability of non-radiative transition on the surface of the quantum dot is reduced, and the quantum yield of light emission and the stability of the semiconductor quantum dot are improved.
  • the semiconductor quantum dots contained in the wavelength conversion film of the embodiment of the present invention are InP / ZnS, CuInS 2 / ZnS, and (ZnS / AgInS 2 ), which are core-shell structure type semiconductor quantum dots, in consideration of the component configuration and structure. It is preferably at least one selected from the group consisting of solid solution / ZnS and homogeneous structure type semiconductor quantum dots AgInS 2 and Zn-doped AgInS 2 .
  • the semiconductor quantum dot has such a configuration, it is possible to provide a stable wavelength conversion film that is safe and has more excellent wavelength conversion characteristics.
  • the semiconductor quantum dots contained in the wavelength conversion film of the embodiment of the present invention have an average particle diameter of about 1.0 nm to 10 nm.
  • the average particle size is less than about 1.0 nm, it is difficult to prepare a semiconductor quantum dot, and even if the semiconductor quantum dot can be prepared, the semiconductor quantum dot may be in an unstable state.
  • the average particle diameter exceeds 10 nm, the quantum confinement effect due to the size of the semiconductor quantum dots may not be obtained, which is not desirable.
  • a known method for thermally decomposing an organometallic compound in a coordinating organic solvent can be used.
  • a precursor for forming a shell on the core surface is added to the reaction system, and the reaction is stopped after the shell formation. And can be obtained by separating from the solvent.
  • a commercially available product can also be used.
  • the wavelength conversion film of embodiment of this invention will not be restrict
  • transparent resin is preferable.
  • Such a resin is not particularly limited as long as it does not impair the effect of the wavelength conversion film of the present invention. For example, it ensures thermal stability and moldability to a film, and is applied to display elements and the like.
  • the glass transition temperature (Tg) is preferably 110 ° C. to 380 ° C., more preferably 110 ° C. to 370 ° C., and further preferably 120 ° C. to 360 ° C.
  • the resin which is is mentioned.
  • the total light transmittance (JIS K7105) at a thickness of 0.1 mm is preferably 75% to 95%, more preferably 78% to 95%, and further preferably 80%. % -95% resin can be used.
  • the total light transmittance is in such a range, the obtained wavelength conversion film exhibits good transparency as an optical film.
  • a resin that is used together with semiconductor quantum dots and that is suitable for film formation without reducing the fluorescence emission characteristics of the semiconductor quantum dots is preferable.
  • semiconductor quantum dots made of a safe material particularly InP / ZnS, CuInS 2 / ZnS and (ZnS / AgInS 2 ) solid solution / ZnS, which are core-shell structure type semiconductor quantum dots, and homogeneous structure type semiconductor quantum
  • a resin material that is used together with at least one selected from the group consisting of dots of AgInS 2 and Zn-doped AgInS 2 and is suitable for forming a film including the semiconductor quantum dots is desirable.
  • Examples of the resin as described above include cyclic polyolefin resins, aromatic polyether resins, polyimide resins, fluorene polycarbonate resins, fluorene polyester resins, polycarbonate resins, polyamide (aramid) resins, and polyarylate resins. Resins, polysulfone resins, polyethersulfone resins, polyparaphenylene resins, polyamideimide resins, polyethylene naphthalate (PEN) resins, fluorinated aromatic polymer resins, (modified) acrylic resins, epoxy resins Examples thereof include resins, allyl ester curable resins, and silsesquioxane ultraviolet curable resins.
  • Cyclic olefin resin The cyclic olefin resin described above is at least selected from the group consisting of a monomer represented by the following formula (X 0 ) and a monomer represented by the following formula (Y 0 ). A resin obtained from one monomer or a resin obtained by hydrogenating the resin as required is preferred.
  • R x1 ⁇ R x4 each independently represent the following (i ') ⁇ (viii' ) than chosen atom or group, k x, m x and p x are each independently Represents 0 or a positive integer.
  • R x1 and R x2 or R x3 and R x4 each represent a monocyclic or polycyclic hydrocarbon ring or heterocyclic ring formed by bonding to each other, and R x1 to R not participating in the bonding x4 each independently represents an atom or group selected from the above (i ′) to (vi ′), or a monocyclic hydrocarbon ring formed by bonding R x2 and R x3 to each other; R x1 to R x4 each representing a heterocyclic ring and not involved in the bond independently represent an atom or group selected from the above (i ′) to (vi ′).
  • R y1 and R y2 each independently represent an atom or group selected from the above (i ′) to (vi ′), or the following (ix ′), and k y and p y independently represents 0 or a positive integer.
  • R y1 and R y2 represent a monocyclic or polycyclic alicyclic hydrocarbon, aromatic hydrocarbon or heterocyclic ring formed by bonding to each other.
  • Aromatic polyether-based resin The aromatic polyether-based resin described above is at least one selected from the group consisting of a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2). It preferably has one structural unit.
  • R 1 to R 4 each independently represents a monovalent organic group having 1 to 12 carbon atoms, and a to d each independently represent an integer of 0 to 4.
  • R 1 ⁇ R 4 and a ⁇ d are the same as R 1 ⁇ R 4 and a ⁇ d each independently of the above formula (1)
  • Y represents a single bond
  • -SO 2 -Or> C O
  • R 7 and R 8 each independently represent a halogen atom, a monovalent organic group having 1 to 12 carbon atoms or a nitro group
  • g and h each independently represent 0 to 4
  • m represents 0 or 1.
  • R 7 is not a cyano group.
  • the aromatic polyether-based resin described above further has at least one structural unit selected from the group consisting of a structural unit represented by the following formula (3) and a structural unit represented by the following formula (4). Is preferred.
  • R 5 and R 6 each independently represent a monovalent organic group having 1 to 12 carbon atoms
  • Z represents a single bond, —O—, —S—, —SO 2 —, > C ⁇ O, —CONH—, —COO— or a divalent organic group having 1 to 12 carbon atoms
  • e and f each independently represent an integer of 0 to 4, and n represents 0 or 1 .
  • R 7 , R 8 , Y, m, g and h are each independently synonymous with R 7 , R 8 , Y, m, g and h in the above formula (2), R 5, R 6, Z, n, e and f have the same meanings as respectively R 5, R 6, Z independently in the above formula (3) in, n, e and f.
  • the polyimide resin is not particularly limited as long as it is a polymer compound containing an imide bond in a repeating unit.
  • JP 2006-199945 A and JP 2008-163107 A It can be synthesized by the method described in the publication.
  • Fluorene polycarbonate resin is not particularly limited and may be any polycarbonate resin containing a fluorene moiety.
  • the fluorene polycarbonate resin is synthesized by the method described in JP-A-2008-163194. be able to.
  • Fluorene polyester-based resin is not particularly limited as long as it is a polyester resin containing a fluorene moiety.
  • JP 2010-285505 A and JP 2011-197450 A It can be synthesized by the method described.
  • Fluorinated aromatic polymer-based resin is not particularly limited, but includes an aromatic ring having at least one fluorine, an ether bond, a ketone bond, a sulfone bond, an amide bond, Any polymer containing a repeating unit containing at least one bond selected from the group consisting of an imide bond and an ester bond may be used.
  • the polymer can be synthesized by the method described in JP-A-2008-181121. .
  • the resin mentioned as preferable for the configuration of the wavelength conversion film of the embodiment of the present invention can be obtained by purchase.
  • Examples of commercially available resins preferable for the configuration of the wavelength conversion film of the embodiment of the present invention include the following commercially available products.
  • Examples of commercially available products of cyclic olefin resins include Arton (registered trademark) manufactured by JSR Corporation, ZEONOR (registered trademark) manufactured by ZEON CORPORATION, APEL (registered trademark) manufactured by Mitsui Chemicals, Inc., and manufactured by Polyplastics Corporation. And TOPAS (registered trademark).
  • Examples of commercially available polyethersulfone resins include Sumika Excel (registered trademark) PES manufactured by Sumitomo Chemical Co., Ltd.
  • Examples of commercially available polyimide resins include Neoprim (registered trademark) L manufactured by Mitsubishi Gas Chemical Company, Inc.
  • Examples of commercially available polycarbonate resins include Pure Ace (registered trademark) manufactured by Teijin Limited.
  • Examples of commercially available fluorene polycarbonate resins include Iupizeta (registered trademark) EP-5000 manufactured by Mitsubishi Gas Chemical Co., Ltd.
  • Examples of commercially available fluorene polyester resins include OKP4HT manufactured by Osaka Gas Chemical Co., Ltd.
  • acrylic resin for example, Nippon Catalyst Co., Ltd.
  • AKRIVIEWER registered trademark
  • Examples of commercially available silsesquioxane-based UV curable resins include Silplus (registered trademark) manufactured by Nippon Steel Chemical Co., Ltd.
  • the wavelength conversion film of the embodiment of the present invention includes a semiconductor quantum dot and a resin, and the content of the semiconductor quantum dot is preferably 0.
  • the amount is from 01 to 100 parts by weight, more preferably from 0.02 to 50 parts by weight, particularly preferably from 0.03 to 30 parts by weight.
  • the content of the semiconductor quantum dots is within the above range, a wavelength conversion film having excellent wavelength conversion characteristics can be provided.
  • the wavelength conversion film according to the embodiment of the present invention can be formed by, for example, melt molding or cast molding, and if necessary, a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent after molding. Can be produced by a coating method. Below, the manufacturing method of a wavelength conversion film is demonstrated.
  • a wavelength conversion film according to an embodiment of the present invention is a method for melt-molding pellets obtained by melt-kneading a resin and semiconductor quantum dots, and a resin composition containing the resin and semiconductor quantum dots.
  • the melt molding method include injection molding, melt extrusion molding, and blow molding.
  • a wavelength conversion film according to an embodiment of the present invention is a method of removing a solvent by casting a resin composition containing semiconductor quantum dots, a resin and a solvent on a suitable base material;
  • a method of casting a resin composition comprising a coating agent such as a coating agent and an antistatic agent, a semiconductor quantum dot, and a resin on an appropriate substrate; or an antireflection agent, a hard coating agent and / or a charge
  • a curable composition containing a coating agent such as an inhibitor, a semiconductor quantum dot, and a resin is cast on a suitable substrate and cured and dried.
  • the substrate examples include a glass plate, a steel belt, a steel drum, and a transparent resin (for example, a polyester film and a cyclic olefin resin film).
  • a transparent resin for example, a polyester film and a cyclic olefin resin film.
  • the wavelength conversion film of the above-described embodiment of the present invention can be obtained by peeling from the substrate, and unless the effect of the present invention is impaired, the substrate and the coating film are not peeled off from the substrate. It is good also as a wavelength conversion board
  • the wavelength conversion film of the embodiment of the present invention can be used as a patterned layer or film, such as a color filter of a flat panel display using liquid crystal or the like.
  • a resin composition containing semiconductor quantum dots, a resin, and a solvent is formed as a layer or film that has been subjected to desired patterning by an appropriate printing method such as screen printing on an appropriate substrate for a display element. Thereafter, the solvent is removed, and the wavelength conversion film of the embodiment of the present invention can be formed as a patterned wavelength conversion film.
  • a resin substrate can also be formed directly on the optical component.
  • the amount of residual solvent in the wavelength conversion film obtained by the above method should be as small as possible.
  • the amount of the residual solvent is preferably 3% by weight or less, more preferably 1% by weight or less, and still more preferably 0.5% by weight or less based on the weight of the film.
  • the amount of residual solvent is in the above-mentioned range, a wavelength conversion film that can easily exhibit a desired function is obtained, in which deformation and characteristics hardly change.
  • FIG. 1 is a cross-sectional view schematically showing an example of a wavelength conversion substrate according to an embodiment of the present invention.
  • a wavelength conversion substrate 1 which is an example of an embodiment of the present invention includes a base material 2 and a wavelength conversion film 3 disposed on the base material 2.
  • the wavelength conversion film 3 of the wavelength conversion substrate 1 is configured to include the semiconductor quantum dots and the resin described above.
  • the substrate 2 is made of glass, quartz, or transparent resin (for example, transparent polyimide, polyethylene naphthalate, polyethylene terephthalate, polyester film, cyclic olefin resin film, etc.).
  • the wavelength conversion film 3 converts the wavelength of the excitation light from the excitation light source using semiconductor quantum dots and converts it into light having a desired wavelength. Therefore, the wavelength conversion board
  • a wavelength conversion element can be provided in combination with an appropriate excitation light source, and is suitable for, for example, a configuration of a lighting device or a display element.
  • the wavelength conversion substrate 1 is provided on the opposite side of the wavelength conversion substrate in order to extract RGB light. It is preferable to use a color filter.
  • the color filter those produced by a known method can be suitably used.
  • the film thickness of the wavelength conversion film is preferably about 100 nm to 100 ⁇ m, more preferably 1 ⁇ m to 100 ⁇ m.
  • the film thickness is less than 100 nm, excitation light cannot be sufficiently absorbed, and the light conversion efficiency is lowered, so that there is a problem that sufficient brightness of the panel cannot be secured.
  • the film thickness is preferably 1 ⁇ m or more in order to enhance absorption of excitation light and sufficiently ensure the brightness of the panel.
  • a light emitting display element can be configured by combining it with a light emitting element such as an organic EL element and using it as an excitation light source.
  • the wavelength conversion substrate of the present embodiment provided with the wavelength conversion film of the present embodiment emits, for example, red light, green light, and blue light independently as in the case of a color filter in a conventional liquid crystal display element or the like. It is preferable to have the function of
  • an image is formed by three types of subpixels: a subpixel that performs red display, a subpixel that performs green display, and a subpixel that performs blue display.
  • a subpixel which is the minimum unit constituting the.
  • the color filter is configured so that the red coloring layer, the green coloring layer, and the blue coloring layer correspond to the sub pixel that performs red display, the sub pixel that performs green display, and the sub pixel that performs blue display, respectively.
  • the wavelength conversion substrate of the present embodiment using the wavelength conversion film of the present embodiment is also configured to enable full color display on the display element. That is, the wavelength conversion film that emits light of each color of red, green, and blue is patterned so as to correspond to the sub-pixel that displays red, the sub-pixel that displays green, and the sub-pixel that displays blue. It is preferable to provide it.
  • FIG. 2 is a cross-sectional view schematically showing another example of the wavelength conversion film of the embodiment of the present invention.
  • another example of the wavelength conversion substrate 11 according to the embodiment of the present invention includes a base 12 and wavelength conversion films 13 a, 13 b, and 13 c arranged on the base 12.
  • a black matrix 14 is disposed between the wavelength conversion films 13a, 13b, and 13c.
  • the black matrix 14 can be formed by using a known light-shielding material and patterning it according to a known method. Note that the black matrix 14 is not an essential component in the wavelength conversion substrate 11, and the wavelength conversion substrate 11 may be configured without the black matrix 14.
  • a wavelength conversion film 13a that converts excitation light into red light, a wavelength conversion film 13b that converts excitation light into green light, and a wavelength conversion film 13c that converts excitation light into blue light are respectively patterned and arranged.
  • the film thickness of the wavelength conversion films 13a, 13b and 13c is preferably about 100 nm to 100 ⁇ m, and more preferably 1 ⁇ m to 100 ⁇ m.
  • the film thickness is less than 100 nm, the excitation light cannot be sufficiently absorbed, and there is a risk that luminance is insufficient due to a decrease in light conversion efficiency.
  • visible light such as blue light
  • the film thickness is preferably 1 ⁇ m or more.
  • the black matrix 14 provided between the three types of wavelength conversion films 13a to 13c is provided, for example, so as to suppress color mixing of colored light emitted from the wavelength conversion films 13a to 13c.
  • the wavelength conversion substrate 11 can be used together with a light emitting element (not shown) serving as an excitation light source to constitute a light emitting display element.
  • a light emitting element (not shown) serving as an excitation light source to constitute a light emitting display element.
  • each wavelength conversion film 13a to 13c is provided corresponding to a sub-pixel that performs red display, a sub-pixel that performs green display, and a sub-pixel that performs blue display, thereby enabling full-color display on the display element.
  • FIG. 3 is a cross-sectional view schematically showing the display element of the embodiment of the present invention.
  • the display element 100 of the present embodiment is configured using the wavelength conversion substrate 11 of the present embodiment described above. Therefore, the same components as those of the wavelength conversion substrate 11 in FIG. 2 are denoted by the same reference numerals, and redundant description is omitted.
  • the display element 100 of this embodiment includes a wavelength conversion substrate 11 configured by providing wavelength conversion films 13 a, 13 b, 13 c and a black matrix 14 on a base material 12, and an adhesive layer 15 on the wavelength conversion substrate 11. And a light source substrate 18 bonded to each other.
  • the adhesive layer 15 is formed using a known adhesive that transmits ultraviolet light or blue light having a wavelength described later. As shown in FIG. 3, the adhesive layer 15 does not need to be provided on the base 12 so as to cover the entire surface of the wavelength conversion films 13 a, 13 b, and 13 c, and is provided only around the wavelength conversion substrate 11. Is also possible.
  • the light source substrate 18 includes a base material 16 and light sources 17a, 17b, and 17c arranged on the wavelength conversion substrate 11 side of the base material 16. Each of the light sources 17a, 17b, and 17c emits ultraviolet light or blue light as excitation light.
  • the ultraviolet light emitting organic EL elements and blue light emitting organic EL elements having a known structure can be used, and are not particularly limited, and are manufactured using known materials and known manufacturing methods.
  • the ultraviolet light preferably emits light having a main light emission peak of 360 to 435 nm
  • the blue light preferably has light emission of a main light emission peak of 435 nm to 480 nm. It is desirable that the light sources 17a, 17b, and 17c have directivity so as to irradiate the wavelength conversion films 13a, 13b, and 13c opposed to the respective emitted lights.
  • the display element 100 of the present embodiment converts the wavelength of the excitation light from the light sources 17a, 17b, and 17c by the semiconductor quantum dots of the wavelength conversion films 13a, 13b, and 13c of the wavelength conversion substrate 11, and displays visible light having a desired wavelength. Used for display.
  • the wavelength conversion substrate 11 of the display element 100 is formed by patterning the wavelength conversion films 13 a, 13 b, and 13 c using semiconductor quantum dots and resin on the base material 12.
  • the wavelength conversion substrate 11 can use a light scattering film configured by dispersing photoacid scattering particles in the same resin as that used by the wavelength conversion film 13c. It is. By doing so, when the excitation light is blue light, the excitation light can be used as it is without converting the wavelength.
  • the portion provided with the wavelength conversion film 13a constitutes a sub-pixel that performs red display. That is, the wavelength conversion film 13a of the wavelength conversion substrate 11 converts the excitation light from the light source 17a facing the light source substrate 18 into red.
  • the portion where the wavelength conversion film 13b is provided constitutes a sub-pixel that performs green display. That is, the wavelength conversion film 13b converts the excitation light from the light source 17b facing the light source substrate 18 into green.
  • the portion provided with the wavelength conversion film 13c constitutes a sub-pixel that performs blue display. That is, the wavelength conversion film 13c converts the excitation light from the light source 17c facing the light source substrate 18 into blue.
  • the display element 100 comprises one pixel which is the minimum unit which comprises an image by three types of subpixels provided with the wavelength conversion films 13a, 13b and 13c.
  • the emission of light of three types of red, green, and blue is controlled for each of the three types of subpixels including the wavelength conversion films 13a, 13b, and 13c. Full color display is performed.
  • a color filter can be provided between the wavelength conversion films 13 a, 13 b, 13 c and the substrate 12. That is, a red color filter is provided between the wavelength conversion film 13a and the substrate 12, a green color filter is provided between the wavelength conversion film 13b and the substrate 12, and the wavelength conversion film 13c and the substrate 12 A red color filter can be provided therebetween.
  • the display element of the embodiment of the present invention can increase the purity of the display color.
  • a color filter what is known for liquid crystal display elements etc. can be formed and used by a well-known method.
  • the wavelength conversion film of embodiment of this invention can be used for the structure of a wavelength conversion element, for example, as mentioned above, can provide a display element.
  • a wavelength conversion element for example, an illumination device can be provided in combination with an appropriate excitation light source.
  • FIG. 4 is a cross-sectional view schematically showing the configuration of the illumination device according to the embodiment of the present invention.
  • the illumination device 200 includes a light source 101 and a wavelength conversion film 102. And it can have the holding body 103 for hold
  • the wavelength conversion film 102 can be provided on a base material (not shown) and held by the holding body 103 together with the base material.
  • the wavelength conversion film 102 is disposed so as to be separated from the light source 101, but can be disposed directly on the light source 101 or on the light source 101 via an appropriate base material. is there.
  • the light source 101 for example, a blue LED that emits blue light (Light Emitting Diode), an ultraviolet light-emitting LED that emits ultraviolet light, or the like can be used.
  • a blue LED that emits blue light Light Emitting Diode
  • an ultraviolet light-emitting LED that emits ultraviolet light or the like can be used.
  • the wavelength conversion film 102 includes the semiconductor quantum dots and the resin described above.
  • the wavelength conversion film 102 converts the wavelength of excitation light from the light source 101 using semiconductor quantum dots, converts the light into light having a desired wavelength, and then emits the light to the diffusion plate 104 side.
  • the wavelength conversion film 102 is preferably configured to include semiconductor quantum dots that convert blue light from the light source 101 into yellow light.
  • the wavelength conversion film 102 can convert a part of the blue light from the light source 101 into yellow light corresponding to the complementary color, and emit it as white light added together.
  • the illuminating device 200 can diffuse the white light inject
  • the illumination device 200 can extract the light from the light source 101 as white light using the wavelength conversion film 102, and can be used as an illumination device for white light emission.
  • the wavelength conversion film 102 converts the semiconductor quantum dot that converts ultraviolet light from the light source 101 into red light, the semiconductor quantum dot that converts green light, and blue light. It is preferable that it is comprised including the semiconductor quantum dot to perform.
  • the lighting device 200 can extract light from the light source 101 as white light with excellent color rendering properties using the wavelength conversion film 102, and can be used as a lighting device for white light emission with high color rendering properties. .
  • the molecular weight of the resin was measured by the following method (a) or (b) in consideration of the solubility of each resin in a solvent.
  • GPC gel permeation chromatography
  • Standard polystyrene equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) were measured using a GPC apparatus (HLC-8220 type, column: TSKgel ⁇ -M, developing solvent: THF) manufactured by Tosoh Corporation.
  • the logarithmic viscosity was measured by the following method (c) instead of the molecular weight measurement by the said method.
  • (C) A part of the polyimide resin solution was added to anhydrous methanol to precipitate the polyimide resin, and filtered to separate from the unreacted monomer.
  • 0.1 g of polyimide obtained by vacuum drying at 80 ° C. for 12 hours is dissolved in 20 mL of N-methyl-2-pyrrolidone, and the logarithmic viscosity ( ⁇ ) at 30 ° C. is obtained by the following formula using a Canon-Fenske viscometer. Asked.
  • Tg Glass transition temperature
  • DSC6200 differential scanning calorimeter
  • Semiconductor quantum dot A InP / ZnS core-shell quantum dot (fluorescence maximum wavelength: 630 nm)
  • Semiconductor quantum dot B InCuS 2 / ZnS core-shell type quantum dot (fluorescence maximum wavelength: 640 nm)
  • Semiconductor quantum dot C AgInS 2 quantum dot (fluorescence maximum wavelength: 650 nm)
  • Semiconductor quantum dot D ZnS-AgInS 2 solid solution / ZnS core-shell quantum dot (fluorescence maximum wavelength: 640 nm)
  • Semiconductor quantum dot E Zn-doped AgInS 2 quantum dot (fluorescence maximum wavelength: 630 nm)
  • semiconductor quantum dots A InP / ZnS core-shell quantum dots
  • semiconductor quantum dots B InCuS 2 / ZnS core-shell quantum dots
  • semiconductor quantum dots C AgInS 2 quantum dots
  • semiconductor quantum dots D ZnS-AgInS 2 solid solution / ZnS core-shell quantum dots
  • semiconductor quantum dots E Zn-doped AgInS 2 quantum dots can be synthesized by a generally known method.
  • the semiconductor quantum dot A InP / ZnS core-shell type quantum dot
  • the semiconductor quantum dot C AgInS 2 quantum ur of American Chemical Society.
  • Semiconductor quantum dots D technical literature with respect to ZnS-AgInS 2 solid solution / ZnS core-shell quantum dots "Chemical Communications 2010, 46, 2082-2084.”
  • the semiconductor quantum dot E technical literature with respect to Zn-doped AgInS 2 quantum dots It can be synthesized with reference to the method described in “Journal of Physical Chemistry C. 2012, 116, 9769-9773”.
  • Dodeca-3-ene hereinafter also referred to as “DNM”) 100 parts, 1-hexene (molecular weight regulator) 18 parts and toluene (ring-opening polymerization solvent) 300 parts The vessel was charged and the solution was heated to 80 ° C.
  • the obtained resin A had a number average molecular weight (Mn) of 32000, a weight average molecular weight (Mw) of 137,000, and a glass transition temperature (Tg) of 165 ° C.
  • the resulting solution was reacted at 140 ° C. for 3 hours, and the generated water was removed from the Dean-Stark tube as needed. When no more water was observed, the temperature was gradually raised to 160 ° C. and reacted at that temperature for 6 hours.
  • the obtained resin B had a number average molecular weight (Mn) of 75000, a weight average molecular weight (Mw) of 188000, and a glass transition temperature (Tg) of 285 ° C.
  • resin C A part of this polyimide resin solution was poured into 1 L of methanol to precipitate the polyimide.
  • the IR spectrum of the obtained resin C was measured, 1704 cm -1 characteristic of imido group, absorption of 1770 cm -1 were observed.
  • Resin C had a glass transition temperature (Tg) of 310 ° C. and a logarithmic viscosity of 0.87.
  • the temperature was raised to 240 ° C. at a rate of 37.5 ° C./Hr, and held at 240 ° C. and 150 Torr for 10 minutes. Thereafter, the pressure was adjusted to 100 Torr over 10 minutes and maintained at 240 ° C. and 120 Torr for 70 minutes. Thereafter, the pressure was adjusted to 100 Torr over 10 minutes and held at 240 ° C. and 100 Torr for 10 minutes.
  • the polymerization reaction was further carried out by stirring for 10 minutes under the conditions of 240 ° C. and 1 Torr or less, at 40 ° C. for 1 Torr or less.
  • resin D polycarbonate resin
  • the precipitated reaction product was separated by filtration, washed with distilled water and methanol, and then dried under reduced pressure to obtain a fluorinated polyether ketone (hereinafter also referred to as “resin F”).
  • the obtained resin F had a number average molecular weight of 71,000 and a glass transition temperature (Tg) of 242 ° C.
  • Example 1 By adding 100 parts by weight of the resin A obtained in Synthesis Example 1, 10 parts by weight of semiconductor quantum dots A (fluorescence maximum wavelength: 630 nm), and further adding methylene chloride to the container, a resin solution having a resin concentration of 20% by weight was obtained. . Next, the obtained semiconductor quantum dot A-containing resin solution was cast on a smooth glass plate, dried at 20 ° C. for 8 hours, and then peeled off from the glass plate. The peeled coating film was further dried at 100 ° C. under reduced pressure for 8 hours to obtain a wavelength conversion film having a thickness of 0.1 mm, a length of 60 mm, and a width of 60 mm.
  • Example 2 A wavelength conversion film having a thickness of 0.105 mm was produced in the same manner as in Example 1 except that the resin, solvent, and film drying conditions shown in Table 1 were employed.
  • the production conditions of the wavelength conversion film are shown in Table 1.
  • Table 1 the number of added parts of the resin is 100 parts by weight, and the concentration of the resin solution is 20% by weight.
  • the resins other than the resins A to F used in Examples 1 to 55, the solvent, and the film drying conditions are as shown below.
  • Example 12 to [Example 22]
  • a semiconductor quantum dot B fluorescence maximum wavelength: 640 nm
  • the thickness of 0.105 mm was the same as in Example 1 except that the resin, solvent, and film drying conditions shown in Table 1 were employed.
  • a wavelength conversion film was produced. The production conditions of the wavelength conversion film are shown in Table 1.
  • Example 23 A semiconductor quantum dot C (fluorescence maximum wavelength: 650 nm) was used as the semiconductor quantum dot, and the thickness of 0.105 mm was the same as in Example 1 except that the resin, solvent, and film drying conditions shown in Table 1 were employed.
  • a wavelength conversion film was produced. The production conditions of the wavelength conversion film are shown in Table 1.
  • Example 34 fluorescence maximum wavelength: 640 nm
  • Example 44 A semiconductor quantum dot D (fluorescence maximum wavelength: 640 nm) was used as the semiconductor quantum dot, and the thickness of 0.105 mm was the same as in Example 1 except that the resin, solvent, and film drying conditions shown in Table 2 were employed.
  • a wavelength conversion film was produced. Table 2 shows the production conditions of the wavelength conversion film.
  • Example 45 fluorescence maximum wavelength: 630 nm
  • Example 55 A semiconductor quantum dot E (fluorescence maximum wavelength: 630 nm) was used as the semiconductor quantum dot, and the thickness of 0.105 mm was the same as in Example 1 except that the resin, solvent, and film drying conditions shown in Table 2 were employed.
  • a wavelength conversion film was produced. Table 2 shows the production conditions of the wavelength conversion film.
  • Resin G Cyclic Olefin Resin “Zeonor (registered trademark) 1420R” (manufactured by Nippon Zeon Co., Ltd.)
  • Resin H Cyclic olefin-based resin “APEL (registered trademark) # 6015” (manufactured by Mitsui Chemicals, Inc.)
  • Resin I Polycarbonate resin “Pure Ace (registered trademark)” (manufactured by Teijin Limited)
  • Resin J Polyethersulfone-based resin “Sumilite (registered trademark) FS-1300” (manufactured by Sumitomo Bakelite Co., Ltd.)
  • Resin K Heat-resistant acrylic resin “Acryview (registered trademark)” (manufactured by Nippon Shokubai Co., Ltd.)
  • Solvent (2) N, N-dimethylacetamide
  • Solvent (3) Ethyl acetate / tol
  • Condition (1) 20 ° C./8 hr ⁇ under reduced pressure 100 ° C./8 hr Condition (2): 60 ° C./8 hr ⁇ 80 ° C./8 hr ⁇ under reduced pressure 140 ° C./8 hr Condition (3): 60 ° C./8 hr ⁇ 80 ° C./8 hr ⁇ under reduced pressure 100 ° C./24 hr Condition (4): 40 ° C./4 hr ⁇ 60 ° C./4 hr ⁇ under reduced pressure 100 ° C./8 hr
  • Each of the wavelength conversion films obtained in Examples 2 to 11 was used, and blue light having a peak wavelength of 450 nm was irradiated using a blue LED. As a result, it was confirmed that some wavelength conversion of excitation light was performed in each wavelength conversion film, and red light was emitted.
  • Each of the wavelength conversion films obtained in Examples 12 to 22 was used, and blue light having a peak wavelength of 450 nm was irradiated using a blue LED. As a result, it was confirmed that some wavelength conversion of excitation light was performed in each wavelength conversion film, and red light was emitted.
  • Each of the wavelength conversion films obtained in Examples 23 to 33 was used, and blue light having a peak wavelength of 450 nm was irradiated using a blue LED. As a result, it was confirmed that some wavelength conversion of excitation light was performed in each wavelength conversion film, and red light was emitted.
  • Each of the wavelength conversion films obtained in Examples 34 to 44 was used, and blue light having a peak wavelength of 450 nm was irradiated using a blue LED. As a result, it was confirmed that some wavelength conversion of excitation light was performed in each wavelength conversion film, and red light was emitted.
  • Each of the wavelength conversion films obtained in Examples 45 to 55 was used, and blue light having a peak wavelength of 450 nm was irradiated using a blue LED. As a result, it was confirmed that some wavelength conversion of excitation light was performed in each wavelength conversion film, and red light was emitted.
  • the wavelength conversion film of the present invention is excellent in stability and can be used in the fields of LEDs and solar cells in addition to display elements and electronic devices using the display elements.
  • Wavelength conversion substrate 2 12, 16 Base material 3, 13a, 13b, 13c, 102 Wavelength conversion film 14 Black matrix 15 Adhesive layer 17a, 17b, 17c, 101 Light source 18 Light source substrate 100 Display element 103 Holding body 104 Diffuser 200 Lighting device

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Abstract

L'invention concerne : un film de conversion de longueur d'onde hautement stable qui contient des points quantiques formés d'un matériau sécurisé et qui possède d'excellentes caractéristiques de conversion de longueur d'onde ; un substrat de conversion de longueur d'onde ; un élément de conversion de longueur d'onde ; et un élément d'affichage. Un film de conversion de longueur d'onde (3) est configuré de façon à contenir des points quantiques de semi-conducteur et une résine, et est agencé sur une base (2). Les points quantiques de semi-conducteur sont au moins un type de points choisi parmi le groupe comprenant des points quantiques en InP/ZnS, des points quantiques enCuInS2/ZnS et des points quantiques en solution solide de (ZnS/AgInS2)/ZnS, qui sont des points quantiques de semi-conducteur de type à structure cœur-écorce, et des points quantiques en AgInS2 et des points quantiques en AgInS2 dopés par Zn, qui sont des points quantiques de semi-conducteur de type à structure uniforme. La résine est une résine transparente. L'invention concerne également un substrat de conversion de longueur d'onde (1) et un élément d'affichage utilisant tous les deux ce film de conversion de longueur d'onde (3).
PCT/JP2013/083887 2013-02-19 2013-12-18 Film de conversion de longueur d'onde, substrat de conversion de longueur d'onde, élément de conversion de longueur d'onde et élément d'affichage WO2014129067A1 (fr)

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