WO2014123094A1 - 磁気メモリ用プローバチャック及びそれを備えた磁気メモリ用プローバ - Google Patents
磁気メモリ用プローバチャック及びそれを備えた磁気メモリ用プローバ Download PDFInfo
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- WO2014123094A1 WO2014123094A1 PCT/JP2014/052484 JP2014052484W WO2014123094A1 WO 2014123094 A1 WO2014123094 A1 WO 2014123094A1 JP 2014052484 W JP2014052484 W JP 2014052484W WO 2014123094 A1 WO2014123094 A1 WO 2014123094A1
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- chuck
- prober
- layer
- magnetic
- insulating layer
- Prior art date
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- 230000015654 memory Effects 0.000 title claims abstract description 46
- 239000004020 conductor Substances 0.000 claims abstract description 32
- 239000011810 insulating material Substances 0.000 claims abstract description 18
- 239000000696 magnetic material Substances 0.000 claims abstract description 8
- 239000000523 sample Substances 0.000 claims description 15
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- 238000011156 evaluation Methods 0.000 abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
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- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56016—Apparatus features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06705—Apparatus for holding or moving single probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5602—Interface to device under test
Definitions
- the present invention relates to a magnetic memory prober chuck for holding a wafer and a magnetic memory prober provided therewith, which are used for electrical inspection of a magnetic memory formed on a wafer.
- a semiconductor element such as an integrated circuit is generally manufactured after being formed on a wafer, separated, assembled as an electronic component, and packaged. As an inspection process, a probe test for confirming the operation of each element on the wafer is performed before separating each element.
- a prober In the probe test, a prober is used.
- the prober has a prober chuck for holding a wafer and a stage for moving the chuck relative to a needle for contacting the wafer.
- the wafer is placed on the chuck and held, the electrode of the semiconductor element is brought into contact with the needle by the operation of the stage, an electrical signal is supplied from the tester to the element through the needle, and the signal output from the element is tested. To detect whether the element operates normally.
- Patent Document 1 holds a conductive chuck top on which a wafer is placed and a bottom surface of the conductive chuck top.
- a prober chuck having an insulating member to be formed and a guard layer made of a conductive material such as nickel plating formed on the lower surface of the insulating member.
- the leakage current flowing from the signal layer to the ground layer (earth) (not shown) is suppressed by applying the same potential to the conductive chuck top and the guard layer as the signal layer contacting the back surface of the wafer. .
- the magnetic memory is called MRAM (Magnetoresistive Random Access Memory) or STT-RAM (Spin Transfer Torque RAM), and is a memory employing spin electronics that uses electron spin as a memory element.
- the magnetic memory stores data using the difference in the direction in which magnetization is applied to the magnetic layer.
- a magnetic tunnel junction (MTJ) element having two magnetic layers sandwiching an insulating layer is used as a memory element, and one of the two magnetic layers has a fixed magnetization direction.
- the other magnetic layer is a variable layer having a variable magnetization direction, the resistance value is switched by changing the magnetization direction of the variable layer, and each state is used corresponding to 0 and 1.
- a magnetic field such as 1 T (tesla) is applied to the magnetic memory (wafer) in order to forcibly switch the magnetization direction of the variable layer of the magnetic memory to a desired direction necessary for the test.
- a conventional prober chuck for a semiconductor element is made of a magnetic material such as iron in order to secure low cost and strength on a conductive material constituting a signal layer and a guard layer, a joining member such as a screw, and other metal members. Is generally used.
- the present invention has been made paying attention to such problems, and provides a prober chuck capable of performing low-leakage evaluation of a magnetic memory under an environment where a magnetic field is applied, and a prober for a magnetic memory including the prober chuck. It is to be.
- the present invention takes the following means to achieve the above object.
- a magnetic memory prober chuck is a magnetic memory prober chuck for holding a wafer on which a magnetic memory is formed, and is formed of a conductive material.
- the non-magnetic material means a member that does not develop attraction and repulsion in a magnetic field having a predetermined strength such as 1T (Tesla).
- Examples of the nonmagnetic conductive material include gold, aluminum, copper, titanium, and platinum.
- Examples of the insulating material include various ceramic materials and various resin materials.
- the members constituting the chuck including the chuck top and the guard layer are made of a nonmagnetic member, even if a magnetic field is applied to the wafer, the members constituting the chuck are attracted by the magnetic field. Since repulsive force is not expressed, vibration caused by applying a magnetic field can be prevented, and low leak evaluation can be performed. Nevertheless, the chuck top on which the wafer is placed is made of a conductive material, and a guard layer made of a conductive material is disposed below the conductive material via an insulating layer. Therefore, if the same potential is applied to both sides, a leakage current appears. However, the influence can be reduced or eliminated, and low leak evaluation can be performed.
- the second insulating layer is formed of an insulating material and is disposed below the guard layer, and is formed of a conductive material and the second insulating layer. It is preferable to further include a ground layer disposed below the layer and insulated from the guard layer by the second insulating layer.
- the insulating layer and the second insulating layer are formed to be larger in size than the guard layer, and the insulating layer and the A region where the guard layer is not interposed is formed between the second insulating layers, and it is preferable that a nonmagnetic fixing portion for fixing both insulating layers is provided in the region.
- the fixing portion include screws, fasteners such as bolts and nuts, and adhesives.
- the fixing portion is preferably a non-magnetic insulating adhesive.
- a magnetic memory prober includes the magnetic memory prober chuck, a ⁇ XY stage that supports the chuck so as to be rotatable about the Z axis and movable along the X axis and the Y axis, and an attached probe.
- the card needle is moved along the Z axis so that the needle can be brought into contact with and separated from the wafer held by the chuck, and the card is disposed below the chuck and passed through the chuck.
- a magnetic field generation unit that applies a magnetic field to the wafer, and the ⁇ XY stage has a scaffold disposed on a side avoiding the lower side of the chuck, and a hollow space for disposing the magnetic field generation unit is provided in the chuck.
- a vertical direction is a Z axis
- a certain direction in the horizontal direction is an X axis
- a direction perpendicular to the X axis in the horizontal direction is a Y axis.
- the Z stage is provided with a second guard layer formed of a non-magnetic conductive material and disposed above the wafer during inspection. It is preferable.
- FIG. 1 is a cross-sectional view schematically showing a magnetic memory prober chuck according to an embodiment of the present invention.
- the schematic plan view which shows the diameter of each member which comprises a chuck
- the top view which shows a 2nd guard layer typically.
- the front view which shows typically the prober for magnetic memories which concerns on this embodiment.
- the prober chuck 1 is used for electrical inspection of a magnetic memory formed on the wafer W, and holds the wafer W on which the magnetic memory is formed.
- the prober chuck 1 has a chuck top 10 as a signal layer, an insulating layer 11, a guard layer 12, a second insulating layer 13, and a ground layer 14, and each member 10 to 14 has a disk shape. It has a laminated structure.
- the chuck top 10 is formed of a nonmagnetic conductive material, and the wafer W is placed thereon.
- the non-magnetic material means a member that does not develop attraction and repulsion in a magnetic field having a predetermined strength such as 1T (Tesla). It can also be said that the member does not affect the external magnetic field (environmental magnetic field).
- gold is used as a material, but other materials can be used as long as they are non-magnetic conductive materials. For example, aluminum, copper, titanium, platinum, etc. are mentioned. In order to reduce the contact resistance with the wafer W, it is preferable to use gold.
- the insulating layer 11 is made of a non-magnetic insulating material and supports the bottom surface of the chuck top 10.
- ceramics such as alumina and silicon nitride are used, but other materials can be used as long as they are non-magnetic insulating materials. Examples thereof include various ceramic materials, various resin materials, and Peak (high insulation resistance).
- Peak high insulation resistance
- the guard layer 12 is formed of a nonmagnetic conductive material and is disposed below the insulating layer 11, and is insulated from the chuck top 10 by the insulating layer 11. In the present embodiment, gold is used, but the guard layer 12 can also be used as long as it is a non-magnetic conductive material like the chuck top 10.
- the second insulating layer 13 is made of a non-magnetic insulating material and is disposed below the guard layer 12. In the present embodiment, the same material as the insulating layer 11 is used.
- the ground layer 14 is formed of a nonmagnetic conductive material and is disposed below the second insulating layer 13, and is insulated from the guard layer 12 by the second insulating layer 13.
- gold is used, but the guard layer 12 can also be used as long as it is a non-magnetic conductive material like the chuck top 10.
- the diameter R1 of the chuck top 10 is smaller than the diameter R2 of the guard layer 12.
- the diameter R3 of the ground layer 14 may be equal to or larger than the diameter R2 of the guard layer 12.
- the diameter R3 of the ground layer 14 is larger than the diameter R2 of the guard layer 12. That is, the diameter R 1 of the chuck top 10 ⁇ the diameter R 2 of the guard layer 12 ⁇ the diameter R 3 of the ground layer 14.
- the diameter R1 of the chuck top 10 ⁇ the diameter R2 of the guard layer 12 ⁇ the diameter R3 of the ground layer 14 may be satisfied.
- the chuck 1 has connection terminals that are electrically connected to the guard layer 12 and the ground layer 14. Further, depending on the type of the chuck 1, air holes and grooves for sucking the wafer W may be formed in the chuck 1.
- FIG. 3 is a front view schematically showing a prober 3 including the prober chuck 1.
- a probe card 4 for performing an electrical inspection by bringing the needle 4a into contact with the magnetic memory on the wafer W is disposed.
- the magnetic field generator 30 is disposed below the chuck 1.
- the thinner the chuck 1 is, the smaller the attenuation of the strength of the magnetic field H becomes. 1 is preferably as thin as possible. This is because if the chuck 1 is thick, a strong electromagnet 30 is required, and the electromagnet becomes large.
- means for fixing the members constituting the chuck 1 is required.
- the chuck top 10, the guard layer 12, and the ground layer 14 are formed on an insulating material by gold plating.
- a magnetic conductive material such as nickel is used as a base.
- a non-magnetic copper is used as a base.
- Other means for thinly forming the conductive material on the insulating material include dry processes such as sputtering and vacuum deposition. In the dry process, aluminum, titanium, platinum, or the like can be used as a base.
- the chuck top 10 is formed on the upper surface of the insulating layer 11 and the guard layer 12 is formed on the lower surface of the insulating layer 11 by gold plating without a base.
- a ground layer 14 is formed on the lower surface of the second insulating layer 13.
- the guard layer 12 may be formed on the upper surface of the second insulating layer 13.
- the diameter R4 of the insulating layer 11 and the second insulating layer 13 is set to be larger than the diameter R2 of the guard layer 12.
- a region Ar ⁇ b> 1 in which the guard layer 12 is not interposed is formed between the insulating layer 11 and the second insulating layer 13.
- a non-magnetic fixing portion 15 for fixing the insulating layers 11 and 12 to each other is provided in the region Ar1.
- the fixing portion 15 is a nonmagnetic insulating adhesive.
- the fixing portion 15 uses an epoxy adhesive, but is not limited thereto.
- the insulating material is used for the adhesive because the adhesive penetrates the insulating layer 11 and the second insulating layer 13 to some extent. Therefore, if a conductive material is used, the insulating function of these insulating layers is reduced. It is because it falls.
- fixed part 15 of this embodiment is an adhesive agent, you may use the fasteners of nonmagnetic materials, such as a screw, a volt
- the thickness D1 of the chuck 1 including the chuck top 10, the insulating layer 11, the guard layer 12, the second insulating layer 13 and the ground layer 14 is set to about 4 mm. .
- it is preferably about 5 mm or less. This is because if the thickness is greater than about 5 mm, the electromagnet (magnetic field generating unit 30) becomes large.
- each of the insulating layer 11 and the second insulating layer is about 2 mm or less, and each of the chuck top 10, the guard layer 12 and the ground layer 14 is 20 ⁇ m or less.
- the thicker the insulating material the higher the insulating effect. Therefore, in a chuck used for inspecting a general semiconductor element such as an integrated circuit, a thick insulating layer is formed to increase the insulating effect.
- the chuck is set to a thickness of at least 10 mm.
- the prober 3 including the prober chuck 1 will be described with reference to FIG.
- the vertical direction will be described as the Z axis, a certain direction in the horizontal direction as the X axis, and a direction perpendicular to the X axis in the horizontal direction as the Y axis.
- the magnetic memory prober 3 includes the prober chuck 1, the ⁇ XY stage 31, the Z stage 32, and the magnetic field generator 30.
- the ⁇ XY stage 31 supports the chuck 1 so as to be rotatable about the Z axis and movable along the X axis and the Y axis.
- the ⁇ XY stage 31 is a hollow stage in which a scaffold is arranged on the side avoiding the lower side of the chuck 1, and thereby a hollow space SP for arranging the magnetic field generating unit 30 is formed below the chuck 1.
- the operation direction of the ⁇ XY stage 31 is set so that the position of the Z axis of the chuck 1 remains unchanged.
- the ⁇ XY stage 31 includes a Y stage 33, an X stage 34, and a ⁇ stage 35.
- a Y stage 33 is provided for a housing (not shown).
- the Y stage 33 includes a pair of Y rail portions 33a arranged as a scaffold, and a Y stage main body 33b supported by both Y rail portions 33a so as to be movable along the Y axis.
- the Y stage main body 33b has a plate shape and an end portion is supported by the Y rail portion 33a.
- a hole for arranging the magnetic field generator 30 is formed in the center of the Y stage main body 33b.
- the X stage 34 is provided on the Y stage main body 33b.
- the X stage 34 has a pair of X rail portions 34a arranged as a scaffold, and an X stage main body 34b supported by both X rail portions 34a so as to be movable along the X axis.
- the X stage main body 34b has a plate shape and an end portion is supported by the X rail portion 34a.
- a hole for arranging the magnetic field generator 30 is formed at the center of the X stage main body 34b.
- the ⁇ stage 35 is provided on the X stage main body 34b.
- the ⁇ stage 35 includes an annular ⁇ rail portion 35a disposed as a scaffold, and a ⁇ stage body 35b supported by the ⁇ rail portion 35a so as to be rotatable about the Z axis.
- the ⁇ stage main body 35b has a plate shape and an end portion is supported by the ⁇ rail portion 35a.
- a hole is formed in the central portion of the ⁇ stage main body 35b.
- a chuck holding portion (not shown) for holding the prober chuck 1 is provided at the periphery of the hole.
- the respective scaffolds (33a, 34a, 35a) are arranged on the sides avoiding the lower side of the chuck 1, and the plate-like stage body (33b, 34b, 35b) is stretched over each scaffold. Therefore, the ⁇ XY stage 31 constitutes a hollow stage having a hollow space SP for disposing the magnetic field generator 30 below the chuck 1. Further, since the movement directions of the stages 33, 34, and 35 are only a linear movement along the X axis, a linear movement along the Y axis, and a rotation movement around the Z axis, the position of the Z axis of the chuck 1 is not changed. It becomes.
- a probe card 4 can be attached to the Z stage 32, and the needle 4a is moved toward and away from the wafer W held by the chuck 1 by moving the needle 4a of the attached probe card 4 along the Z axis.
- the Z stage 32 includes a plate-shaped Z stage main body 32b to which the probe card 4 is attached, and a Z support portion that supports the Z stage main body 32b so as to be movable along the Z axis using a housing (not shown) as a scaffold. 32a.
- the Z stage 32 is provided with a second guard layer 2 made of a nonmagnetic conductive material and disposed above the wafer W during inspection. As shown in FIG. 2B, a hole 2 h for passing the needle 4 a of the probe card 4 is formed in the center of the second guard layer 2.
- the magnetic field generator 30 is disposed below the chuck 1 and applies a magnetic field H to the wafer W through the chuck 1 (see FIG. 1).
- an electromagnet that applies a vertical magnetic field is provided as the magnetic field generator 30, but an electromagnet that applies an in-plane magnetic field according to the magnetic memory is used. Also good.
- the magnetic field generation unit 30 is disposed in the vicinity of the bottom surface of the chuck 1 and separated by, for example, about 1 mm.
- the magnetic field generator 30 is preferably an electromagnet, but a permanent magnet may be used in some cases.
- the tester 5 and the probe card 4 are connected, and the signal layer (chuck top 10), the guard layer 12 and the second guard layer 2 are applied to the same potential,
- the ground layer 14 is grounded.
- the magnetic field generator 30 applies a magnetic field of about 1 T (Tesla) to the wafer W.
- the prober 3 controls the drive of the stages 32 to 35 so that the needle 4a contacts the magnetic memory to be tested.
- the wafer W is inspected with a magnetic field having a predetermined strength applied.
- the magnetic memory prober chuck 1 of the present embodiment is a chuck for holding the wafer W on which the magnetic memory is formed, and is formed of a conductive material, and the chuck top 10 on which the wafer W is placed.
- 12 and all the members constituting the chuck 1 including the chuck top 10 and the guard layer 12 are made of a non-magnetic material.
- the members constituting the chuck 1 including the chuck top 10 and the guard layer 12 are constituted by nonmagnetic members, the members constituting the chuck 1 even when a magnetic field is applied to the wafer W. Since no attractive force and repulsive force are generated in the magnetic field, vibration caused by applying the magnetic field is prevented, and low-leakage evaluation is possible. Nevertheless, the chuck top 10 on which the wafer W is placed is made of a conductive material, and a guard layer 12 made of a conductive material is disposed below the insulating layer 11 so that if the same potential is applied to both, the leakage will occur. Even if an electric current appears, the influence can be reduced or eliminated, and a low leak evaluation can be performed.
- the chuck 1 of the present embodiment is formed of an insulating material, and is formed of a second insulating layer 13 disposed below the guard layer 12 and is formed of a conductive material and disposed below the second insulating layer 13. And a ground layer 14 that is insulated from the guard layer 12 by the second insulating layer 13. According to this configuration, since the chuck 1 is provided with the ground layer 14, if the ground layer 14 is grounded, disturbance noise can be prevented by the chuck 1, and a chuck more suitable for low leak evaluation is provided. Is possible.
- the chuck is as thin as possible in order to suppress the attenuation of the magnetic field.
- means for fixing each layer is required. Therefore, in the present embodiment, the insulating layer and the second insulating layer are formed to have dimensions larger than the guard layer, and the guard layer is interposed between the insulating layer and the second insulating layer. A non-magnetic region is formed in the region, and a non-magnetic fixing portion for fixing the two insulating layers to each other is provided in the region.
- the fixing portion 15 since the insulating layer 11 and the second insulating layer 13 are fixed using the nonmagnetic fixing portion 15, the fixing portion 15 does not exhibit attraction and repulsion in the magnetic field, and has low leakage. Evaluation can be realized. In addition, since the fixing portion 15 is in contact with and fixed to the insulating layer and the second insulating layer in the region Ar1 where the guard layer 12 is not interposed, it is possible to ensure strength.
- the fixing portion is a non-magnetic insulating adhesive. According to this configuration, both insulating layers 11 and 13 can be accurately fixed even if the thickness of the chuck 1 is reduced. Furthermore, since an insulating material is used for the adhesive, the adhesive does not have an electrical influence. Therefore, it is possible to pursue a thinner chuck with the above-described configuration.
- the chuck 1 of the present embodiment is preferably applied to the following prober 3. That is, the magnetic memory prober 3 according to this embodiment includes a magnetic memory prober chuck 1, a ⁇ XY stage 31 that supports the chuck 1 so as to be rotatable about the Z axis and movable along the X axis and the Y axis, The needle 4a of the probe card 4 thus moved is moved along the Z-axis so that the needle 4a can be brought into and out of contact with the wafer W held by the chuck 1 and disposed below the chuck 1.
- the distance between the magnetic field generating unit 30 disposed in the hollow space SP and the wafer W held by the chuck 1 is always constant, so that the strength of the magnetic field applied to the wafer W by the magnetic field generating unit 30 is constant. Therefore, it is possible to provide a prober 3 suitable for measurement.
- the Z stage 32 is provided with a second guard layer 2 made of a non-magnetic conductive material and disposed above the wafer W during inspection.
- a second guard layer 2 made of a non-magnetic conductive material and disposed above the wafer W during inspection.
- the second guard layer 2 is provided on the Z stage of the prober 3, but this may be omitted.
- the ground layer 14 is integrally incorporated in the chuck 1, but as shown in FIG. 4, the ground layer is not incorporated in the chuck 101, and the prober 103 has a ground layer. 114 may be provided.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
固定部には、ネジ、ボルトやナットなどの締着具、接着剤などが挙げられる。
すなわち、本発明の磁気メモリ用プローバは、上記磁気メモリ用プローバチャックと、前記チャックをZ軸回りに回転可能に且つX軸Y軸に沿って移動可能に支持するθXYステージと、取付けられたプローブカードの針をZ軸に沿って移動させることにより、前記チャックに保持されるウエハに対して前記針を接離可能にするZステージと、前記チャックの下方に配置され、前記チャックを通過させて前記ウエハに磁場を印加する磁場発生部と、を備え、前記θXYステージは、前記チャックの下方を避けた側方に足場が配置され、前記磁場発生部を配置するための中空空間を前記チャックの下方に有する中空ステージであり、前記チャックのZ軸の位置が不変となるように動作方向が設定されていることを特徴とする。
この構成によれば、中空空間に配置した磁場発生部とチャックで保持するウエハの距離が常に一定となるので、磁場発生装置がウエハに印加する磁場の強さを一定にでき、計測に適したプローバを提供することが可能となる。
この構成によれば、チャック1にグランド層14が設けられるので、グランド層14を接地すれば、外乱ノイズをチャック1にて防ぐことができ、より一層低リーク評価に適したチャックを提供することが可能となる。
この構成によれば、非磁性体の固定部15を用いて絶縁層11及び第2の絶縁層13を固定しているので、磁場において固定部15が引力及び斥力を発現しせず、低リーク評価を実現することが可能となる。それでいて、ガード層12が介在しない領域Ar1において固定部15が絶縁層と第2の絶縁層に接触して固定しているので、強度を確保することも可能となる。
例えば、本実施形態では、図3に示すように、プローバ3のZステージに第2のガード層2を設けているが、これを省略することも可能である。
1…プローバチャック
10…チャックトップ
11…絶縁層
12…ガード層
13…第2の絶縁層
14…グランド層
15…固定部(接着剤)
3…プローバ
31…θXYステージ
32…Zステージ
30…磁場発生部(電磁石)
Claims (6)
- 磁気メモリが形成されたウエハを保持する磁気メモリ用プローバチャックであって、
導電材料で形成され、前記ウエハが載置されるチャックトップと、
絶縁材料で形成され、前記チャックトップの底面を支持する絶縁層と、
導電材料で形成されると共に前記絶縁層の下方に配置され、前記絶縁層により前記チャックトップと絶縁されているガード層と、を備え、
前記チャックトップ及び前記ガード層を含む前記チャックを構成する全ての部材は、非磁性体で構成されている磁気メモリ用プローバチャック。 - 絶縁材料で形成され、前記ガード層の下方に配置される第2の絶縁層と、
導電材料で形成されると共に前記第2の絶縁層の下方に配置され、前記第2の絶縁層により前記ガード層と絶縁されているグランド層と、を更に備える請求項1に記載の磁気メモリ用プローバチャック。 - 前記絶縁層及び前記第2の絶縁層は、前記ガード層よりも寸法が大きく形成され、前記絶縁層及び前記第2の絶縁層の間には、前記ガード層が介在しない領域が形成されており、当該領域には、双方の絶縁層同士を固定する非磁性体の固定部が設けられている請求項2に記載の磁気メモリ用プローバチャック。
- 前記固定部は、非磁性体の絶縁接着剤である請求項3に記載の磁気メモリ用プローバチャック。
- 請求項1~4のいずれかに記載の磁気メモリ用プローバチャックと、
前記チャックをZ軸回りに回転可能に且つX軸Y軸に沿って移動可能に支持するθXYステージと、
取付けられたプローブカードの針をZ軸に沿って移動させることにより、前記チャックに保持されるウエハに対して前記針を接離可能にするZステージと、
前記チャックの下方に配置され、前記チャックを通過させて前記ウエハに磁場を印加する磁場発生部と、を備え、
前記θXYステージは、前記チャックの下方を避けた側方に足場が配置され、前記磁場発生部を配置するための中空空間を前記チャックの下方に有する中空ステージであり、前記チャックのZ軸の位置が不変となるように動作方向が設定されている磁気メモリ用プローバ。 - 前記Zステージには、非磁性体の導電材料で形成され、検査時に前記ウエハの上方に配置される第2のガード層が設けられている請求項5に記載の磁気メモリ用プローバ。
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JP6486747B2 (ja) * | 2015-03-30 | 2019-03-20 | 国立大学法人東北大学 | プローバチャック、磁気メモリ用プローバチャック及びプローバ |
WO2018140394A1 (en) * | 2017-01-27 | 2018-08-02 | Ultratech, Inc. | Chuck systems and methods having enhanced electrical isolation for substrate-biased ald |
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