WO2014104495A1 - 절삭공구용 다층박막과 이를 포함하는 절삭공구 - Google Patents
절삭공구용 다층박막과 이를 포함하는 절삭공구 Download PDFInfo
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- WO2014104495A1 WO2014104495A1 PCT/KR2013/004426 KR2013004426W WO2014104495A1 WO 2014104495 A1 WO2014104495 A1 WO 2014104495A1 KR 2013004426 W KR2013004426 W KR 2013004426W WO 2014104495 A1 WO2014104495 A1 WO 2014104495A1
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- thin film
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- layer
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- 239000010409 thin film Substances 0.000 title claims abstract description 120
- 238000005520 cutting process Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 6
- 230000000704 physical effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000003014 reinforcing effect Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000003801 milling Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 241000276498 Pollachius virens Species 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/44—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
Definitions
- the present invention relates to a multilayer thin film for cutting tools, more specifically, a super thin lattice of several nanometers to several tens of nanometers thick is a multilayer thin film laminated in the form of ABCD or ABCB, which can realize a low quality deviation and excellent wear resistance.
- a multilayer thin film for cutting tools is a multilayer thin film laminated in the form of ABCD or ABCB, which can realize a low quality deviation and excellent wear resistance.
- the principle of improving the properties of the superlattice coating is described as a reinforcing mechanism such as Koehler's model, Hall-Petch relationship, and coherency strain model.
- the reinforcement mechanism is implemented by controlling the lattice constant difference, the elastic modulus difference, or the lamination period of A and B during alternating deposition of A and B materials.
- each thin film constituting the multilayer thin film formed by alternating lamination is usually formed with a very thin thickness of several nm to several tens of nm, when the multilayer thin film thus formed is exposed to a high temperature environment formed during cutting for a long time, There is also a problem in that physical properties of the multilayer thin film are deteriorated due to mutual diffusion of components constituting the thin film between adjacent thin films.
- the problem to be solved by the present invention in forming a multi-layer thin film consisting of a super lattice, by controlling the period of the lattice constant and elastic modulus of the multi-layer thin film so that two or more thin film reinforcement mechanisms act, wear resistance of the conventional super lattice coating
- the present invention provides an improved cutting tool multilayer thin film and a cutting tool in which the multilayer thin film is formed.
- another object of the present invention is to provide a multi-layered thin film and a cutting tool in which the multi-layered thin film is formed so that the interdiffusion between the thin layers constituting the multilayer thin film can be suppressed and the reinforcing effect of the multilayer thin film can be maintained for a long time as compared with the conventional art.
- the present invention is a multi-layer thin film for a cutting tool in which a unit thin film consisting of a thin layer A, a thin layer B, a thin layer C, and a thin layer D is sequentially stacked, and the elastic modulus between the thin layers (k ) Is k A , k C > k B , k D or k B , k D > k C , k A , and the lattice constant L between the thin layers is L A > L B , L D > L C
- a multilayer tool for cutting tools characterized in that L C > L B , L D > L A.
- the difference between the maximum value and the minimum value of the lattice constant L is preferably within 20%.
- the elements of the thin layer B and the thin layer D may include one or more elements that are the same or at least the same as the elements of the adjacent thin layer A or the thin layer C.
- the lattice constant average period ⁇ L of the multilayer thin film may be twice the average elastic modulus period ⁇ k.
- the thickness of the unit thin film may be 4nm ⁇ 50nm.
- the thin layer B and the thin layer D may be made of the same material.
- the present invention also provides a cutting tool comprising the multilayer thin film described above.
- the multilayer thin film formed by simultaneously controlling the difference in the lattice constant as well as the difference in the elastic modulus between the thin layers constituting the multilayer thin film, the difference in the elastic modulus for strengthening the thin film, and the unit thin film lattice
- the constant difference is minimized and the reinforcement mechanism conditions for minimizing the inter-layer thermal expansion coefficient can be simultaneously satisfied, thereby further improving the physical properties of the formed multilayer thin film.
- the multilayer thin film according to the present invention is advantageous in maintaining the physical properties of the multilayer thin film for a long time even in a high temperature cutting environment by minimizing the compositional difference between the thin layers to suppress interdiffusion between layers.
- the multilayer thin film according to the present invention is advantageous in terms of productivity because the quality deviation is small even if the difference in the thickness of the thin film formed for each lot is large.
- Figure 1 shows the relationship between the elastic modulus and the period of the lattice constant of a conventional superlattice multilayer thin film.
- Figure 2 shows the relationship between the elastic modulus and the lattice constant period of the superlattice multilayer thin film according to the present invention.
- 3 is a view for explaining the composition difference between the thin layers of the multilayer thin film according to the present invention.
- Example 5 is a photograph showing the turning performance test results of the multilayer thin film formed according to Example 1 of the present invention and the multilayer thin film formed according to the comparative example.
- Figure 6 is a photograph showing the milling performance test results of the multilayer thin film formed according to Example 1 of the present invention and the multilayer thin film formed according to the comparative example.
- Example 7 is a photograph showing the cutting performance test results of the multilayer thin film formed according to Example 2 of the present invention and the multilayer thin film formed according to the comparative example.
- the elastic modulus and the lattice constant do not coincide with each other, and when differently adjusted, in particular, two or more reinforcing mechanisms (ie, Koehler's model mechanisms and Hall-Petch relation mechanisms) in the laminated superlattice membrane It can be worked smoothly, as well as improve the wear resistance of the multilayer thin film, confirmed that the quality deviation is reduced compared to the multilayer thin film mainly work one reinforcing mechanism during mass production, and completed the present invention.
- two or more reinforcing mechanisms ie, Koehler's model mechanisms and Hall-Petch relation mechanisms
- the multilayer thin film according to the present invention is a multilayer thin film composed of a thin layer A, a thin layer B, a thin layer C, and a thin layer D, and the elastic modulus k between the thin layers is k A , k C > k B , k D k B , k D > k C , k A , and the lattice constant L between the thin layers is L A > L B , L D > L C or L C > L B , L D > L A do.
- FIG. 2 shows an example of the relationship between the elastic modulus and the lattice constant period of the superlattice multilayer thin film according to the present invention.
- the superlattice multilayer thin film according to the present invention is different from FIG. 1, and the period (solid line) of the elastic modulus is about twice the period (dotted line) of the lattice constant, and thus the elastic modulus and lattice constant It can be seen that the periods of do not match.
- the Koehler model which is related to the elastic modulus, explains that the reinforcing effect occurs below 20-30 nm, which is about 100 atomic layers, which is a critical thickness at which the thickness of the A thin film and the B thin film are sufficiently small to make dislocations difficult.
- the Hall-petch model which explains the periods of the material being separated by the lattice constant, explains that the reinforcing effect occurs at a lower number of several nm.
- the present invention is adjusted so that the period of the elastic modulus and the period of the lattice constant are mutually inconsistent so that the two reinforcing effects can occur.
- the multilayer thin film according to the present invention is intended for the unit thin film is composed of four layers, the stacking order of each unit thin film may be made in the order of A-B-C-D or A-B-C-B. That is, the second layer and the fourth layer may be made of different materials or the same material.
- the average period of the elastic modulus and the average period of the lattice constant is different from each other, it is included in the scope of the present invention, preferably the average period of the elastic modulus may be twice the average period of the lattice constant.
- the elements of the thin layer B and the thin layer D have one or more elements which are the same or at least the same as the element of the adjacent thin layer A or thin layer C. It can be included.
- the deposition of the unit thin film was performed by the in-arc ion plating method of physical vapor deposition (PVD), and the deposition was performed using an initial vacuum pressure of 8.5 ⁇ 10. -5 Decompression below Torr and N as reaction gas 2
- the reaction gas pressure was 40mTorr or less (preferably 10 ⁇ 35m) Torr), temperature was 400-600 degreeC, and the board
- the lattice constant of each unit thin film constituting the multilayer thin film can be obtained by XRD analysis after forming a single layer thin film.
- the radius values of atoms, ions, and covalent bonds, which are theoretically obtained from experiments, are theoretically obtained.
- the lattice constant was calculated by calculating the radius value of the covalent bond quantitatively according to the atomic ratio to the B1 Cubic structure.
- Lattice constant: a 4.24-0.125x (x is molar ratio of Al)
- Example 1 of the present invention the TiAlN-based thin film was compared with the case where the multilayer thin film was formed by the method according to the present invention and the case where the multilayer thin film was formed by the conventional method.
- Deposition was performed by in-sputtering of physical vapor deposition (PVD), and the deposition was decompressed to an initial vacuum pressure of 4 mPa or less, and ion cleaning of the substrate was performed at -600V.
- N 2 was injected into the reaction gas, and Ar and Kr were used as inert gases.
- the deposition pressure was 500 ⁇ 700mPa, and the cathode power and table rotation speed were controlled within the range of 2000 ⁇ 14000W, 0.5 ⁇ 3RPM, respectively, to control the stacking cycle.
- the chamber temperature was 400 ⁇ 600 and the substrate bias voltage was -60. It carried out on conditions which are -150V.
- the lamination structure and composition of the multilayer thin film were performed as shown in Table 2 below, and a total of 200 thin films were formed by repeating a total of 200 thin films so that the period of the thin film composed of four unit thin films was 10-20 nm.
- the multilayer thin film of 2.5-3.5 micrometers was obtained.
- A30 a P30 grade of Korean metallurgy, was used.
- SPKN1504EDSR-SM was used. .
- Example 2 of the present invention the AlCrN-based thin film was compared with the case where the multilayer thin film was formed by the method according to the present invention and the case where the multilayer thin film was formed by the conventional method.
- the lamination structure and composition of the multilayer thin film were performed as shown in Table 3 below, and a total of 180 layers of thin films consisting of four unit thin films were repeatedly laminated so that the average period of the lattice constant was 5 to 10 nm and the period of elastic modulus was 10 to 20 nm. Thus, a multilayer thin film having a final thin film thickness of 2.5 to 3.5 ⁇ m was obtained.
- CNMG120408-HS was used for the PP9030 material, which is the M30 grade of Korean metallurgy.
- Examples 2-1 and 2-2 of the present invention show improved slope wear patterns compared to Comparative Example 2-3.
- the superlattice multilayer thin film laminated by controlling the period of elastic modulus and lattice constant according to the present invention exhibits improved wear resistance compared to the case where it is not.
- the multilayer thin film according to the present invention can be suitably used for the film for cutting tools.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
박막 | 타겟 조성(원자%) | 탄성계수(GPa) |
TiN | Ti = 99.9 | 416 |
TiAlN | Ti : Al = 75 : 25 | 422 |
TiAlN | Ti : Al = 50 : 50 | 430 |
AlTiN | Ti : Al = 33 : 67 | 398 |
TiAlCrN | Ti : Al : Cr = 28: 67 : 5 | 404 |
TiAlSiN | Ti : Al : Si = 35: 63 : 2 | 374 |
TiCrN | Ti : Cr = 90 : 10 | 421 |
TiSiN | Ti : Si = 95 : 5 | 382 |
TiVN | Ti : V = 95 : 5 | 412 |
TiNbN | Ti : Nb = 95 : 5 | 406 |
TiZrN | Ti : Zr = 95 : 5 | 377 |
CrN | Cr = 99.9 | 475 |
CrAlN | Cr : Al = 50 : 50 | 367 |
AlCrN | Cr : Al = 30 : 70 | 403 |
AlCrSiN | Cr : Al : Si = 30 : 65 : 5 | 338 |
박막 | 타겟 | A | B | C | D | 비고 |
1-1 | 조성 | Ti | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 462 | 423 | 409.7 | 423 | ||
탄성계수 | 416 | 430 | 398 | 430 | ||
1-2 | 조성 | Ti | Ti:Al=50:50 | Ti:Al=8:92 | Ti:Al=50:50 | 실시예 |
격자상수 | 462 | 423 | 390 | 423 | ||
탄성계수 | 416 | 430 | 297 | 430 | ||
1-3 | 조성 | Ti | Ti:Al=50:50 | Ti:Al:Si=35:63:2 | Ti:Al=50:50 | 실시예 |
격자상수 | 462 | 423 | 411 | 423 | ||
탄성계수 | 416 | 430 | 374 | 430 | ||
1-4 | 조성 | Ti | Ti:Al=50:50 | Ti:Al:Cr=28:67:5 | Ti:Al=50:50 | 실시예 |
격자상수 | 462 | 423 | 406 | 423 | ||
탄성계수 | 416 | 430 | 404 | 430 | ||
1-5 | 조성 | Ti:Cr=90:10 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 460 | 423 | 409.7 | 423 | ||
탄성계수 | 421 | 430 | 398 | 430 | ||
1-6 | 조성 | Ti:Si=95:5 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 459 | 423 | 409.7 | 423 | ||
탄성계수 | 382 | 430 | 398 | 430 | ||
1-7 | 조성 | Ti:V=95:5 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 461 | 423 | 409.7 | 423 | ||
탄성계수 | 412 | 430 | 398 | 430 | ||
1-8 | 조성 | Ti:Nb=95:5 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 462 | 423 | 409.7 | 423 | ||
탄성계수 | 406 | 430 | 398 | 430 | ||
1-9 | 조성 | Ti:Zr=95:5 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 실시예 |
격자상수 | 464 | 423 | 409.7 | 423 | ||
탄성계수 | 377 | 430 | 398 | 430 | ||
1-10 | 조성 | Ti | Ti:Al=50:50 | Ti:Al=50:50 | Ti:Al=50:50 | 비교예 |
격자상수 | 462 | 423 | 423 | 423 | ||
탄성계수 | 416 | 430 | 430 | 430 | ||
1-11 | 조성 | Ti:Al=33:67 | Ti:Al=50:50 | Ti:Al=50:50 | Ti:Al=50:50 | 비교예 |
격자상수 | 409.7 | 423 | 423 | 423 | ||
탄성계수 | 398 | 430 | 430 | 430 | ||
1-12 | 조성 | Ti:Al=33:67 | Ti:Al=50:50 | Ti:Al=33:67 | Ti:Al=50:50 | 비교예 |
격자상수 | 409.7 | 423 | 409.7 | 423 | ||
탄성계수 | 398 | 430 | 398 | 430 |
박막 | 항목 | A | B | C | D | 비고 |
2-1 | 조성 | Cr=99.9 | Cr:Al=50:50 | Cr:Al=30:70 | Cr:Al=50:50 | 실시예 |
격자상수 | 420 | 402 | 382.7 | 402 | ||
탄성계수 | 475 | 367 | 403 | 367 | ||
2-2 | 조성 | Cr:Si=95:5 | Cr:Al=50:50 | Cr:Al=30:70 | Cr:Al=50:50 | 실시예 |
격자상수 | 417 | 402 | 382.7 | 402 | ||
탄성계수 | 447 | 367 | 403 | 367 | ||
2-3 | 조성 | Cr:Al=30:70 | Cr:Al=50:50 | Cr:Al=30:70 | Cr:Al=50:50 | 비교예 |
격자상수 | 382.7 | 402 | 382.7 | 402 | ||
탄성계수 | 403 | 367 | 403 | 367 |
Claims (7)
- 박층A, 박층B, 박층C 및 박층D로 순차적층되어 이루어진 단위박막이 2회 이상 적층된 절삭공구용 다층박막으로,상기 박층간의 탄성계수(k)는, kA,kC > kB,kD 이거나 kB,kD > kC,kA 이고,상기 박층 간의 격자상수(L)는, LA>LB, LD>LC 이거나 LC>LB, LD>LA 인 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항에 있어서,상기 격자상수(L)의 최대값과 최소값의 차이가 20% 이내인 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항에 있어서,박층B와 박층D의 구성원소는 인접한 박층A 또는 박층C의 구성원소와 같거나 적어도 동일한 원소를 1개 이상을 포함하는 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항에 있어서,상기 다층박막의 격자상수 평균 주기(λL)는 탄성계수 평균 주기(λk)의 2배인 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항 또는 제 2 항에 있어서,상기 단위박막의 두께는 4nm~50nm인 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항 또는 제 2 항에 있어서,상기 박층B와 박층D는 동일한 물질로 이루어진 것을 특징으로 하는 절삭공구용 다층박막.
- 제 1 항 또는 제 2 항에 기재된 다층박막이 형성된 절삭공구.
Priority Applications (4)
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US14/653,266 US20150337459A1 (en) | 2012-12-27 | 2013-05-21 | Multilayer thin film for cutting tool and cutting tool including the same |
DE112013006267.4T DE112013006267T5 (de) | 2012-12-27 | 2013-05-21 | Mehrlagige Dünnschicht für Schneidwerkzeug und Schneidwerkzeug damit |
CN201380068331.2A CN104884668B (zh) | 2012-12-27 | 2013-05-21 | 用于切削工具的多层薄膜以及包含其的切削工具 |
RU2015130314A RU2613258C2 (ru) | 2012-12-27 | 2013-05-21 | Многослойная тонкая пленка для режущего инструмента и режущий инструмент, содержащий такую пленку |
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KR1020120155125A KR101471257B1 (ko) | 2012-12-27 | 2012-12-27 | 절삭공구용 다층박막과 이를 포함하는 절삭공구 |
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PCT/KR2013/010334 WO2014104573A1 (ko) | 2012-12-27 | 2013-11-14 | 절삭공구용 다층박막과 이를 포함하는 절삭공구 |
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Also Published As
Publication number | Publication date |
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RU2015130314A (ru) | 2017-01-31 |
CN104884668A (zh) | 2015-09-02 |
WO2014104573A1 (ko) | 2014-07-03 |
US20150307998A1 (en) | 2015-10-29 |
KR20140085016A (ko) | 2014-07-07 |
CN104884668B (zh) | 2017-09-01 |
DE112013006240B4 (de) | 2023-06-29 |
CN104870684B (zh) | 2017-09-08 |
DE112013006267T5 (de) | 2015-09-24 |
RU2613258C2 (ru) | 2017-03-15 |
US20150337459A1 (en) | 2015-11-26 |
CN104870684A (zh) | 2015-08-26 |
DE112013006240T5 (de) | 2015-10-08 |
KR101471257B1 (ko) | 2014-12-09 |
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