WO2014103996A1 - 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 - Google Patents

半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 Download PDF

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Publication number
WO2014103996A1
WO2014103996A1 PCT/JP2013/084442 JP2013084442W WO2014103996A1 WO 2014103996 A1 WO2014103996 A1 WO 2014103996A1 JP 2013084442 W JP2013084442 W JP 2013084442W WO 2014103996 A1 WO2014103996 A1 WO 2014103996A1
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Prior art keywords
group
adhesive
semiconductor device
compound
temporary
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2013/084442
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English (en)
French (fr)
Japanese (ja)
Inventor
悠 岩井
藤牧　一広
一郎 小山
中村　敦
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Fujifilm Corp
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Fujifilm Corp
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Priority to KR1020157016999A priority Critical patent/KR101793583B1/ko
Publication of WO2014103996A1 publication Critical patent/WO2014103996A1/ja
Priority to US14/743,619 priority patent/US20150284603A1/en
Anticipated expiration legal-status Critical
Priority to US14/953,697 priority patent/US20160075922A1/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J151/00—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • C09J151/003—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers grafted on to macromolecular compounds obtained by reactions only involving unsaturated carbon-to-carbon bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J125/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
    • C09J125/02—Homopolymers or copolymers of hydrocarbons
    • C09J125/04—Homopolymers or copolymers of styrene
    • C09J125/08—Copolymers of styrene
    • C09J125/14—Copolymers of styrene with unsaturated esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/10—Homopolymers or copolymers of methacrylic acid esters
    • C09J133/12—Homopolymers or copolymers of methyl methacrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C09J133/16—Homopolymers or copolymers of esters containing halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C09J183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

Definitions

  • the present invention relates to a temporary adhesive for manufacturing a semiconductor device, an adhesive support using the same, and a method for manufacturing a semiconductor device.
  • a wire bonding method As an electrical connection method from an integrated circuit in an IC chip to an external terminal of the IC chip, a wire bonding method has been widely known.
  • a silicon substrate is used.
  • a method is known in which a through-hole is provided in the semiconductor device and a metal plug as an external terminal is connected to an integrated circuit so as to pass through the through-hole (so-called silicon through electrode (TSV) forming method).
  • TSV silicon through electrode
  • a technique for improving the degree of integration per unit area of a silicon substrate by multilayering integrated circuits in an IC chip is known.
  • the multilayered integrated circuit increases the thickness of the IC chip, it is necessary to reduce the thickness of the members constituting the IC chip.
  • the thinning of the silicon substrate is being considered as the thinning of such a member, which not only leads to the miniaturization of the IC chip, but also saves labor in the through hole manufacturing process of the silicon substrate in the manufacture of the silicon through electrode. Because it is possible, it is considered promising.
  • a semiconductor silicon wafer having a thickness of about 700 to 900 ⁇ m is widely known as a semiconductor silicon wafer used in a semiconductor device manufacturing process.
  • the thickness of a semiconductor silicon wafer has been reduced for the purpose of miniaturizing an IC chip. Attempts have been made to reduce the thickness to 200 ⁇ m or less.
  • the semiconductor silicon wafer having a thickness of 200 ⁇ m or less is very thin, and the semiconductor device manufacturing member based on this is also very thin, such a member can be further processed, or When such a member is simply moved, it is difficult to support the member stably and without causing damage.
  • the wafer is supported by a support layer system, and a plasma polymer layer obtained by a plasma deposition method is interposed between the wafer and the support layer system as a separation layer.
  • the adhesive bond between the support layer system and the separation layer is made larger than the bond bond between the wafer and the separation layer, so that when the wafer is detached from the support layer system, the wafer is easily detached from the separation layer.
  • a technique configured to be separated is also known (see Patent Document 2).
  • a pressure-sensitive adhesive film made of syndiotactic 1,2-polybutadiene and a photopolymerization initiator and having an adhesive force that changes by irradiation with radiation is known (see Patent Document 6). Further, the support substrate and the semiconductor wafer are temporarily bonded with an adhesive made of polycarbonate, and the semiconductor wafer is processed, irradiated with irradiation radiation, and then heated to process the processed semiconductor wafer. A technique for detaching the substrate from the support substrate is known (see Patent Document 7).
  • the adhesive composition which consists of an energy-beam curable copolymer which has an energy-beam polymerizable unsaturated group in a side chain, an epoxy resin, and a thermally activated latent epoxy resin hardening
  • curing agent a thermally activated latent epoxy resin hardening
  • curing agent a thermally activated latent epoxy resin hardening
  • composition for an adhesive layer containing a fluorine compound and a monomer and / or an oligomer that can be used for bonding a semiconductor chip and a device is known (see Patent Document 9).
  • Patent Document 10 a resin composition containing a silicone macromonomer that can be used for an adhesive sheet that can be re-attached is known (see Patent Document 10).
  • thermoplastic resin a radical polymerizable compound, a radical generator, and a silicone monomer
  • Patent Document 11 an adhesive composition containing a thermoplastic resin, a radical polymerizable compound, a radical generator, and a silicone monomer is known (see Patent Document 11).
  • the surface of the semiconductor wafer on which the device is provided (that is, the device surface of the device wafer) and the support substrate (carrier substrate) are temporarily bonded via a layer made of an adhesive known in Patent Document 1 or the like.
  • the adhesive layer is required to have a certain degree of adhesion to stably support the semiconductor wafer. Therefore, in the case of temporarily adhering the entire device surface of the semiconductor wafer and the support substrate via the adhesive layer, the temporary adhesion between the semiconductor wafer and the support substrate is sufficient, and the semiconductor wafer is stably and However, the temporary adhesion between the semiconductor wafer and the support substrate is too strong, so that the device may be damaged or detached from the semiconductor wafer. There is a tendency for the device to be detached.
  • a plasma polymer layer as a separation layer is formed between the wafer and the support layer system by a plasma deposition method.
  • the forming method is (1) Usually, the equipment cost for performing the plasma deposition method is large; (2) The layer formation by the plasma deposition method requires time for evacuation and monomer deposition in the plasma apparatus; and (3) Even when a separation layer composed of a plasma polymer layer is provided, when supporting a wafer to be processed, the wafer is released from support while the adhesive bond between the wafer and the separation layer is sufficient. In such a case, it is not easy to control the adhesive bond so that the wafer is easily detached from the separation layer;
  • the present invention has been made in view of the above-mentioned background, and the object thereof is excellent in applicability and at a high temperature (for example, when subjecting a member to be processed (such as a semiconductor wafer) to mechanical or chemical treatment.
  • a member to be processed such as a semiconductor wafer
  • 100 ° C can temporarily support the member to be processed with a high adhesive force, can reduce the problem that the adhesive generates gas even in the temporary support at a high temperature, and can be processed even after being subjected to a process at a high temperature.
  • a temporary adhesive for manufacturing a semiconductor device which can be easily released (with high releasability) from temporary support to the processed member without damaging the finished member, and an adhesive support using the same, and Another object is to provide a method for manufacturing a semiconductor device.
  • the temporary support for the treated member can be easily released without irradiation with actinic rays or radiation.
  • the present inventors can easily provide temporary support to the processing member without damaging the processed member even when a process at a high temperature in the semiconductor device manufacturing method is performed by using the temporary adhesive. It was found that it can be released (with high peelability), and the present invention has been completed. That is, the present invention is as follows.
  • a temporary adhesive for manufacturing a semiconductor device comprising (A) a radically polymerizable monomer or oligomer having a fluorine atom or a silicon atom, (B) a polymer compound, and (C) a radical polymerization initiator. [2] Furthermore, (D) The temporary adhesive for semiconductor device manufacture as described in said [1] containing the radically polymerizable monomer or oligomer different from the said radically polymerizable monomer or oligomer (A). [3] The temporary adhesive for manufacturing a semiconductor device according to the above [1] or [2], wherein the radical polymerizable monomer or oligomer (A) has two or more radical polymerizable functional groups.
  • An adhesive support comprising a substrate and an adhesive layer formed on the substrate by the temporary adhesive for manufacturing a semiconductor device according to any one of [1] to [6].
  • the surface of the adhesive layer to be bonded to the first surface of the member to be processed Before the step of bonding the first surface of the member to be processed and the substrate via the adhesive layer, the surface of the adhesive layer to be bonded to the first surface of the member to be processed
  • the semiconductor according to [8] or [9] further including a step of heating the adhesive layer at a temperature of 50 ° C. to 300 ° C. before the step of performing a chemical treatment to obtain a treated member.
  • Device manufacturing method Before the step of bonding the first surface of the member to be processed and the substrate via the adhesive layer, the surface of the adhesive layer to be bonded to the first surface of the member to be processed
  • the semiconductor according to [8] or [9] further including a step of heating the adhesive layer at a temperature of 50 ° C. to 300 ° C. before the step of performing a chemical treatment to obtain
  • the treated member comprises a treated substrate and a protective layer provided on the first surface of the treated substrate, The surface of the protective layer opposite to the substrate to be treated is the first surface of the member to be treated, The semiconductor according to any one of [8] to [11], wherein the second surface of the substrate to be processed is different from the first surface as the second surface of the member to be processed.
  • Device manufacturing method [13] A kit comprising a protective layer compound and the temporary adhesive for manufacturing a semiconductor device according to any one of [1] to [6].
  • the present invention it is excellent in applicability and can temporarily support the member to be processed with high adhesive force when performing mechanical or chemical treatment on the member to be processed, and at a high temperature in the method of manufacturing a semiconductor device.
  • a temporary adhesive for manufacturing a semiconductor device capable of easily releasing temporary support for a processed member even after undergoing a process at a high temperature without damaging the processed member even after undergoing the process, and The adhesive support used and the method for manufacturing the semiconductor device can be provided.
  • FIG. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and schematic cross-sections illustrating a state in which the device wafer temporarily bonded by the adhesive support is thinned.
  • FIG. It is a schematic sectional drawing explaining cancellation
  • 3A, 3B, 3C, and 3D are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer with a protective layer, respectively, and a device wafer with a protective layer temporarily bonded by the adhesive support FIG.
  • FIG. 2 is a schematic cross-sectional view showing a state in which a thin film is thinned, a schematic cross-sectional view showing a thin device wafer with a protective layer peeled from an adhesive support, and a schematic cross-sectional view showing a thin device wafer.
  • 4A and 4B are a schematic cross-sectional view illustrating a state in which a device wafer temporarily bonded by an adhesive support is thinned, and a device wafer with a protective layer temporarily bonded by an adhesive support. It is a schematic sectional drawing explaining the state reduced in thickness.
  • FIG. 5A shows a schematic cross-sectional view illustrating exposure of the adhesive support
  • FIG. 5B shows a schematic top view of the mask.
  • FIG. 6A shows a schematic cross-sectional view of a pattern-exposed adhesive support
  • FIG. 6B shows a schematic top view of the pattern-exposed adhesive support.
  • fever with respect to an adhesive support body is shown.
  • the notation which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent.
  • the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
  • Actinic light” or “radiation” in the present specification means, for example, those containing visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays and the like. In the present invention, “light” means actinic rays or radiation.
  • the term “exposure” in the present specification is not limited to exposure with a far-ultraviolet ray such as a mercury lamp, ultraviolet ray, and excimer laser, X-ray, EUV light, etc. It also means drawing with particle beams.
  • a far-ultraviolet ray such as a mercury lamp, ultraviolet ray, and excimer laser, X-ray, EUV light, etc. It also means drawing with particle beams.
  • “(meth) acrylate” represents acrylate and methacrylate
  • (meth) acryl represents acryl and methacryl
  • “(meth) acryloyl” represents acryloyl and methacryloyl.
  • “monomer” and “monomer” are synonymous.
  • the monomer in the present invention is distinguished from oligomer and polymer, and refers to a compound having a mass average molecular weight of 2,000 or less.
  • a polymerizable compound means a compound having a polymerizable group, and may be a monomer or a polymer, and a polymerizable group is a group involved in a polymerization reaction.
  • a polymerizable group is a group involved in a polymerization reaction.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention includes (A) a radical polymerizable monomer or oligomer having a fluorine atom or a silicon atom, (B) a polymer compound, and (C) A radical polymerization initiator is contained.
  • the coating property is excellent, and when the member to be processed is subjected to a mechanical or chemical treatment, it is covered with a high adhesive force even at a high temperature (for example, 100 ° C.).
  • a temporary adhesive for manufacturing a semiconductor device can be obtained which can temporarily support the processing member and can release the temporary support to the processed member even after the process at a high temperature without damaging the processed member.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention is preferably for forming a silicon through electrode. The formation of the through silicon via will be described in detail later.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention contains a radical polymerizable monomer or oligomer having a fluorine atom or a silicon atom.
  • the radical polymerizable monomer or oligomer having a fluorine atom or a silicon atom is preferably a radical polymerizable monomer or oligomer having a fluorine atom.
  • the radically polymerizable monomer or oligomer having a fluorine atom of the present invention (hereinafter sometimes simply referred to as “specific monomer or oligomer”) is a radically polymerizable monomer or oligomer having one or more fluorine atoms in one molecule. It is particularly preferable to have what is generally called a perfluoro group, in which two or more fluorine atoms are contained in one molecule.
  • the radically polymerizable monomer or oligomer having a fluorine atom or a silicon atom has a radically polymerizable functional group, and the radically polymerizable functional group is not particularly limited, but an unsaturated group (such as an ethylenically unsaturated bond group). Preferably).
  • the radically polymerizable monomer or oligomer having a fluorine atom or a silicon atom preferably has two or more radically polymerizable functional groups, so that the treated member after the high temperature process of the temporary adhesive is performed.
  • the peelability of the temporary support with respect to can be further improved.
  • the radical polymerizable monomer or oligomer having a fluorine atom is preferably at least one selected from compounds represented by the following structural formulas (1), (2), (3), (4) and (5).
  • R 1 represents a hydrogen atom or a methyl group.
  • R 2 is, -C p H 2p -, - C (C p H 2p + 1) H -, - CH 2 C (C p H 2p + 1) H-, or an -CH 2 CH 2 O-.
  • R f is —C n F 2n + 1 , — (CF 2 ) n H, —C n F 2n + 1 —CF 3 , — (CF 2 ) p OC n H 2n C i F 2i + 1 , — (CF 2 ) p OC m H 2m C i F 2i H, —N (C p H 2p + 1 ) COC n F 2n + 1 , or —N (C p H 2p + 1 ) SO 2 C n F 2n + 1 is represented.
  • p represents an integer of 1 to 10
  • n represents an integer of 1 to 16
  • m represents an integer of 0 to 10
  • i represents an integer of 0 to 16, respectively.
  • CF 2 CFOR g: Structural formula (2)
  • R g represents a fluoroalkyl group having 1 to 20 carbon atoms.
  • R g represents a fluoroalkyl group having 1 to 20 carbon atoms.
  • R 3 and R 4 represents a hydrogen atom, or a methyl group.
  • R 5 and R 6 -C q H 2q -, - C (C q H 2q + 1) H -, - CH 2 C (C q H 2q + 1) H- or -CH 2 CH 2 O-, the R j - Represents C t F 2t .
  • q is an integer of 1 to 10
  • t is an integer of 1 to 16.
  • R 7 and R 8 represents a hydrogen atom, or a methyl group.
  • R k is -CyF 2y + 1 .
  • y is an integer of 1 to 16.
  • Examples of the monomer represented by the structural formula (1) include CF 3 (CF 2 ) 5 CH 2 CH 2 OCOCH ⁇ CH 2 , CF 3 CH 2 OCOCH ⁇ CH 2 , and CF 3 (CF 2 ) 4.
  • CH 2 CH 2 OCOC (CH 3 ) CH 2, C 7 F 15 CON (C 2 H 5)
  • radically polymerizable monomer or oligomer having a fluorine atom an oligomer having a repeating unit having a fluorine atom and a repeating unit having a radically polymerizable functional group can also be preferably used.
  • the repeating unit having a fluorine atom is preferably a repeating unit represented by the following formula (6) or (7).
  • R 1 , R 2 , R 3 , and R 4 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group, or a monovalent organic group, and R 1 , R 2 , At least one of R 3 and R 4 is a fluorine atom or a monovalent organic group having a fluorine atom.
  • the monovalent organic group having a fluorine atom is not particularly limited, but is preferably a fluorinated alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and a fluorinated alkyl group having 1 to 15 carbon atoms. Is particularly preferred.
  • This fluorine-containing alkyl group is a straight chain ⁇ for example, —CF 2 CF 3 , —CH 2 (CF 2 ) 4 H, —CH 2 (CF 2 ) 8 CF 3 , —CH 2 CH 2 (CF 2 ) 4 H, etc.
  • a branched structure ⁇ eg, —CH (CF 3 ) 2 , —CH 2 CF (CF 3 ) 2 , —CH (CH 3 ) CF 2 CF 3 , —CH (CH 3 ) (CF 2 ) 5 CF 2 H and the like ⁇ and an alicyclic structure (preferably a 5- or 6-membered ring such as a perfluorocyclohexyl group, a perfluorocyclopentyl group, or an alkyl group substituted with these).
  • An ether bond (for example, —CH 2 OCH 2 CF 2 CF 3 , —CH 2 CH 2 OCH 2 C 4 F 8 H, —CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , —CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.) may have. Further, it may be a perfluoroalkyl group.
  • the monovalent organic group is preferably an organic group composed of 3 to 10 non-metallic atoms, for example, 1 to 60 carbon atoms, 0 to 10 nitrogen atoms, 0 Organic groups composed of at least one element selected from 1 to 50 oxygen atoms, 1 to 100 hydrogen atoms, and 0 to 20 sulfur atoms. More specific examples include organic groups composed of the following structures singly or in combination.
  • the monovalent organic group may further have a substituent. Examples of the substituent that can be introduced include a halogen atom, a hydroxy group, a carboxy group, a sulfonate group, a nitro group, a cyano group, an amide group, and an amino group.
  • Alkyl groups alkenyl groups, alkynyl groups, aryl groups, substituted oxy groups, substituted sulfonyl groups, substituted carbonyl groups, substituted sulfinyl groups, sulfo groups, phosphono groups, phosphonate groups, silyl groups, heterocyclic groups, and the like.
  • the organic group may contain an ether bond, an ester bond, or a ureido bond.
  • the monovalent organic group is preferably an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
  • the alkyl group is preferably an alkyl group having 1 to 8 carbon atoms.
  • a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a t-butyl group, an isopentyl group, a 2-ethylhexyl group, a 2-ethylhexyl group, A methylhexyl group, a cyclopentyl group, etc. are mentioned.
  • alkenyl group and an alkenyl group having 2 to 20 carbon atoms are preferable, and examples thereof include a vinyl group, an allyl group, a prenyl group, a geranyl group, and an oleyl group.
  • the alkynyl group is preferably an alkynyl group having 3 to 10 carbon atoms, and examples thereof include an ethynyl group, a propargyl group, and a trimethylsilylethynyl group.
  • the aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group.
  • the heterocyclic group is preferably a heterocyclic group having 2 to 10 carbon atoms, and examples thereof include a furanyl group, a thiophenyl group, and a pyridinyl group.
  • X represents an oxygen atom, a sulfur atom, or —N (R 8 ) —
  • R 8 represents a hydrogen atom or a monovalent organic group.
  • the monovalent organic group include an alkyl group which may have a substituent. Specific examples of the substituent are the same as those given as specific examples of the substituent that the monovalent organic group as R 1 to R 4 may have.
  • Y represents a single bond or a divalent linking group.
  • the divalent linking group represents a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. .
  • R 5 , R 6 , and R 7 each independently represent a hydrogen atom, an alkyl group, or a halogen atom.
  • Rf is a fluorine atom or a monovalent organic group having a fluorine atom.
  • the monovalent organic group having a fluorine atom the same substituents as the specific examples of the monovalent organic group having a fluorine atom in formula (6) can be preferably used.
  • the content of the repeating unit having a fluorine atom is preferably 2 mol% to 98 mol%, preferably 10 mol% to 90 mol%, based on all repeating units of the radical polymerizable oligomer having a fluorine atom. Is more preferable.
  • repeating unit having a radical polymerizable functional group a repeating unit represented by the following formula (8) is preferable.
  • R 801 to R 803 each independently represent a hydrogen atom, an alkyl group, or a halogen atom.
  • T represents a structure having a radical polymerizable functional group.
  • T represents a radical polymerizable functional group represented by the general formula (9).
  • the alkyl group as R 801 to R 803 is preferably an alkyl group having 1 to 6 carbon atoms.
  • R 901 to R 903 each independently represents a hydrogen atom, an alkyl group, or an aryl group.
  • the dotted line represents a bond to group linking to Y 8.
  • alkyl group examples are preferably alkyl groups having 1 to 8 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a tert-butyl group, an isopentyl group, a 2-ethylhexyl group, Examples thereof include 2-methylhexyl group and cyclopentyl group.
  • aryl group are preferably aryl groups having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group.
  • R 901 to R 903 are particularly preferably a hydrogen atom or a methyl group.
  • Y 8 represents a single bond or a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. To express. Specific examples of comprising the combination Y 8 below. In the following examples, the left side is bonded to the main chain, and the right side is bonded to the formula (9).
  • the divalent aliphatic group means an alkylene group, a substituted alkylene group, an alkenylene group, a substituted alkenylene group, an alkynylene group, a substituted alkynylene group or a polyalkyleneoxy group.
  • an alkylene group, a substituted alkylene group, an alkenylene group, and a substituted alkenylene group are preferable, and an alkylene group and a substituted alkylene group are more preferable.
  • the divalent aliphatic group is preferably a chain structure rather than a cyclic structure, and more preferably a straight chain structure than a branched chain structure.
  • the number of carbon atoms in the divalent aliphatic group is preferably 1-20, more preferably 1-15, still more preferably 1-12, and still more preferably 1-10. It is more preferably 1 to 8, still more preferably 1 to 4.
  • substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxy group, a carboxy group, an amino group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, and an acyl group. , Alkoxycarbonyl group, aryloxycarbonyl group, acyloxy group, monoalkylamino group, dialkylamino group, arylamino group and diarylamino group.
  • Examples of the divalent aromatic group include a phenylene group, a substituted phenylene group, a naphthalene group, and a substituted naphthalene group, and a phenylene group is preferable.
  • Examples of the substituent for the divalent aromatic group include an alkyl group in addition to the examples of the substituent for the divalent aliphatic group.
  • the content of the repeating unit having a radical polymerizable functional group is preferably 2 mol% to 98 mol%, based on all repeating units of the radical polymerizable oligomer having a fluorine atom, and is preferably 10 mol% to 90 mol%. It is more preferable that
  • the weight average molecular weight in terms of polystyrene of the radically polymerizable oligomer having a fluorine atom as measured by gel per emission chromatography (GPC) method is preferably 2000 to 10,000, more preferably 8000 to 2000, and preferably 6000 to 2000. Most preferred.
  • the radically polymerizable monomer or oligomer which has a fluorine atom Preferably, it is 0.01 to 15 mass% with respect to the total solid of the temporary adhesive for semiconductor device manufacture It is preferable. If it is less than 0.01% by mass, the peelability tends to be insufficient. On the other hand, when it exceeds 15 mass%, there exists a tendency for adhesiveness to fall.
  • the radical polymerizable monomer or oligomer having a silicon atom in the present invention is preferably a silicone monomer or a silicone oligomer.
  • the compound which is a saturated group is mentioned,
  • the compound which has a (meth) acryloyl group is preferable.
  • the number average molecular weight in terms of polystyrene of the radically polymerizable oligomer having a silicon atom as measured by gel per emission chromatography is preferably 1,000 to 10,000.
  • the number average molecular weight in terms of polystyrene of the radically polymerizable oligomer having a silicon atom by gel per emission chromatography is less than 1,000 or 10,000 or more, properties such as releasability due to silicon atoms are hardly exhibited.
  • radical polymerizable monomer having a silicon atom in the present invention, it is preferable to use a compound represented by the general formula (11) or (12).
  • R 11 to R 19 each independently represents a hydrogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or an aryl group.
  • the alkyl group may be linear or branched, and is preferably an alkyl group having 1 to 5 carbon atoms, specifically, methyl group, ethyl group, n-propyl group. Group, isopropyl group and the like.
  • An alkoxy group means —OR 20 , where R 20 represents an alkyl group (preferably an alkyl group having 1 to 5 carbon atoms), and specifically includes a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group. And a butoxy group.
  • An alkoxycarbonyl group means —C ( ⁇ O) R 21 , where R 21 represents an alkoxy group (preferably an alkoxy group having 1 to 5 carbon atoms), and specifically includes methoxycarbonyl, ethoxycarbonyl, And propoxycarbonyl.
  • R 21 represents an alkoxy group (preferably an alkoxy group having 1 to 5 carbon atoms), and specifically includes methoxycarbonyl, ethoxycarbonyl, And propoxycarbonyl.
  • the aryl group include a phenyl group, a tolyl group, and a naphthyl group, which may have a substituent, such as a phenylmethyl (benzyl) group, a phenylethyl group, a phenylpropyl group, a phenylbutyl group, and a naphthylmethyl. Groups and the like.
  • L 11 , L 12 and L 13 each independently represents a single bond or a divalent linking group.
  • the divalent linking group represents a divalent linking group selected from the group consisting of —CO—, —O—, —NH—, a divalent aliphatic group, a divalent aromatic group, and combinations thereof. .
  • N and m each independently represents an integer of 0 or more, preferably an integer of 0 to 100, more preferably an integer of 0 to 50.
  • Z 11 , Z 12 , and Z 13 each independently represent a radical polymerizable group, and a functional group represented by any one of the following general formulas (i) to (iii) is particularly preferable.
  • R 101 to R 103 each independently represents a hydrogen atom or a monovalent organic group.
  • R 101 preferably includes a hydrogen atom or an alkyl group which may have a substituent. Among them, a hydrogen atom and a methyl group are preferable because of high radical reactivity.
  • R 102 and R 103 are preferably each independently a hydrogen atom, halogen atom, amino group, carboxyl group, alkoxycarbonyl group, sulfo group, nitro group, cyano group, or optionally substituted alkyl.
  • aryl group which may have a substituent alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkylamino group which may have a substituent, substituent Represents an arylamino group which may have a substituent, an alkylsulfonyl group which may have a substituent, or an arylsulfonyl group which may have a substituent, among which a hydrogen atom, a carboxyl group, an alkoxycarbonyl group An alkyl group which may have a substituent and an aryl group which may have a substituent are preferable because of high radical reactivity.
  • X 101 represents an oxygen atom, a sulfur atom, or —N (R 104 ) —
  • R 104 represents a hydrogen atom or a monovalent organic group.
  • the monovalent organic group include an alkyl group which may have a substituent.
  • R 104 is preferably a hydrogen atom, a methyl group, an ethyl group, or an isopropyl group because of high radical reactivity.
  • substituents examples include alkyl groups, alkenyl groups, alkynyl groups, aryl groups, alkoxy groups, aryloxy groups, halogen atoms, amino groups, alkylamino groups, arylamino groups, carboxyl groups, alkoxycarbonyl groups, sulfo groups, A nitro group, a cyano group, an amide group, an alkylsulfonyl group, an arylsulfonyl group and the like can be mentioned.
  • R 201 to R 205 each independently represents a hydrogen atom or a monovalent organic group.
  • R 201 to R 205 each independently represents a hydrogen atom, a halogen atom, an amino group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group that may have a substituent, or a substituent.
  • An aryl group that may have, an alkoxy group that may have a substituent, an aryloxy group that may have a substituent, an alkylamino group that may have a substituent, and a substituent It is preferably a good arylamino group, an optionally substituted alkylsulfonyl group, or an optionally substituted arylsulfonyl group, having a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, or a substituent. It is more preferably an alkyl group which may be substituted or an aryl group which may have a substituent.
  • Y 201 represents an oxygen atom, a sulfur atom, or —N (R 206 ) —.
  • R 206 has the same meaning as R 104 in formula (i), and preferred examples thereof are also the same.
  • R 301 to R 303 each independently represents a hydrogen atom or a monovalent organic group.
  • R 301 is preferably a hydrogen atom or an alkyl group which may have a substituent, and more preferably a hydrogen atom or a methyl group because of high radical reactivity.
  • R 302 and R 303 are each independently a hydrogen atom, a halogen atom, an amino group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, or a substituent.
  • Z 301 represents an oxygen atom, a sulfur atom, —N (R 304 ) — or a phenylene group which may have a substituent.
  • R 304 has the same meaning as R 104 in formula (i), and examples of the monovalent organic group include an alkyl group which may have a substituent. Among them, a methyl group, an ethyl group, and An isopropyl group is preferable because of high radical reactivity.
  • the content of the radically polymerizable monomer or oligomer having a silicon atom is preferably 0.01% by mass or more and 15% by mass or less with respect to the total solid content of the temporary adhesive for manufacturing a semiconductor device. If it is less than 0.01% by mass, the peelability tends to decrease. On the other hand, when it exceeds 15 mass%, there exists a tendency for adhesiveness to fall.
  • radical polymerizable monomer or oligomer having a fluorine atom or a silicon atom examples include RS-75 and RS-72-K manufactured by DIC Corporation, OPTOOL DAC-HP manufactured by Daikin Industries, Ltd., and Shin-Etsu Chemical Co., Ltd. X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164C, X-22-164E, EBECRYL350, EBECRYL1360, manufactured by Daicel Cytec Co., Ltd., Degussa Examples include TEGORAD 2700 manufactured by the company.
  • the temporary adhesive for semiconductor device manufacture of this invention is excellent in applicability
  • the coating property means the uniformity of the film thickness after coating and the film forming property after coating.
  • any polymer compound can be used.
  • hydrocarbon resin for example, hydrocarbon resin, novolac resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polyvinyl acetate, Teflon (registered trademark) , ABS resin, AS resin, MS resin, acrylic resin, polyamide, polyacetal, polycarbonate, polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polyetheretherketone, polyamideimide And natural resins such as natural rubber.
  • hydrocarbon resin ABS resin, AS resin, MS resin, polyurethane, novolac resin, and polyimide are preferable, and hydrocarbon resin and MS resin are most preferable.
  • any hydrocarbon resin can be used.
  • the hydrocarbon resin in the present invention basically means a resin composed of only carbon atoms and hydrogen atoms, but if the basic skeleton is a hydrocarbon resin, it may contain other atoms as side chains. That is, when a functional group other than a hydrocarbon group is directly bonded to the main chain, such as an acrylic resin, a polyvinyl alcohol resin, a polyvinyl acetal resin, or a polyvinylpyrrolidone resin, to a hydrocarbon resin consisting of only carbon atoms and hydrogen atoms. It is included in the hydrocarbon resin in the invention. In this case, the content of the repeating unit in which the hydrocarbon group is directly bonded to the main chain is 30 mol% or more based on the total repeating unit of the resin. Is preferred.
  • hydrocarbon resins examples include polystyrene resin, terpene resin, terpene phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, and hydrogenated rosin ester.
  • the hydrocarbon resin is preferably a polystyrene resin, a terpene resin, a rosin, a petroleum resin, a hydrogenated rosin, a polymerized rosin, an olefin polymer, or a cycloolefin polymer, and a polystyrene resin, a terpene resin, a rosin, an olefin polymer, Or a cycloolefin polymer, more preferably a polystyrene resin, terpene resin, rosin, olefin polymer, polystyrene resin, or cycloolefin polymer, and a polystyrene resin, terpene resin, rosin, cycloolefin polymer, Or it is especially preferable that it is an olefin polymer, and it is most preferable that it is a polystyrene resin or a cycloolefin monomer polymer.
  • cycloolefin polymers examples include norbornene polymers, monocyclic olefin polymers, cyclic conjugated diene polymers, vinyl alicyclic hydrocarbon polymers, and hydrides of these polymers.
  • Preferred examples of the cycloolefin polymer include addition (co) polymers containing at least one repeating unit represented by the following general formula (II), and at least one repeating unit represented by the general formula (I). Addition (co) polymers further comprising a species or more.
  • Another preferred example of the cycloolefin polymer is a ring-opening (co) polymer containing at least one cyclic repeating unit represented by the general formula (III).
  • R 1 to R 6 each independently represents a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms
  • X 1 to X 3 and Y 1 to Y 3 each independently represent a hydrogen atom
  • R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 are each independently a hydrogen atom or a hydrocarbon group (preferably a hydrocarbon group having 1 to 20 carbon atoms), Z Represents a hydrocarbon group or a hydrocarbon group substituted with a halogen, W represents SiR 18p D 3-p (R 18 represents a hydrocarbon group having 1 to 10 carbon atoms, and D represents a halogen atom. , —OCOR 18 or —OR 18 , and p represents an integer of 0 to 3. n represents an integer of 0 to 10.
  • Norbornene polymers are disclosed in JP-A-10-7732, JP-T 2002-504184, US2004 / 229157A1 or WO2004 / 070463A1.
  • the norbornene-based polymer can be obtained by addition polymerization of norbornene-based polycyclic unsaturated compounds. If necessary, a norbornene-based polycyclic unsaturated compound and ethylene, propylene, butene; conjugated dienes such as butadiene and isoprene; non-conjugated dienes such as ethylidene norbornene can also be subjected to addition polymerization.
  • This norbornene polymer is marketed by Mitsui Chemicals, Inc.
  • Tg glass transition temperatures
  • APL8008T Tg70 ° C
  • APL6013T Tg125 ° C
  • APL6015T Tg145 ° C
  • Pellets such as TOPAS 8007, 5013, 6013, 6015, etc. are available from Polyplastics. Further, Appear 3000 is sold by Ferrania.
  • the polycyclic unsaturated compound can be produced by addition polymerization or metathesis ring-opening polymerization and then hydrogenation.
  • R 5 and R 6 are preferably hydrogen atoms or methyl groups
  • X 3 and Y 3 are preferably hydrogen atoms, and other groups are appropriately selected.
  • This norbornene-based polymer is sold under the trade name Arton G or Arton F by JSR Co., Ltd., and Zeonor ZF14, ZF16, Zeonex 250, Nippon Zeon Co., Ltd., These are commercially available under the trade names 280 and 480R, and these can be used.
  • the polystyrene equivalent weight average molecular weight of the polymer compound by gel per emission chromatography (GPC) method is preferably 10,000 to 1,000,000, preferably 50,000 to 500,000, More preferably, it is 100,000 to 300,000.
  • the content of the polymer compound is preferably 5% by mass or more, more preferably 10% by mass or more, and more than 20% by mass with respect to the total solid content of the temporary adhesive of the present invention. Is more preferable.
  • the content of the polymer compound is preferably 70% by mass or less, more preferably 60% by mass or less, and 50% by mass or less, based on the total solid content of the temporary adhesive of the present invention. More preferably it is.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention contains a radical polymerization initiator, that is, a compound that generates radicals by irradiation with actinic rays or radiation (light irradiation) or heat.
  • a radical polymerization initiator that is, a compound that generates radicals by irradiation with actinic rays or radiation (light irradiation) or heat.
  • a curing reaction due to radicals occurs by irradiating or heating the adhesive layer, and the adhesiveness in the light irradiation part or heating part is increased. Can be reduced.
  • the polymerization initiator is not particularly limited as long as it has the ability to initiate a polymerization reaction (crosslinking reaction) in a reactive compound having a polymerizable group as the polymerizable monomer, and is appropriately selected from known polymerization initiators. You can choose. For example, those having photosensitivity to visible light from the ultraviolet region are preferable. Moreover, the activator which produces
  • the polymerization initiator preferably contains at least one compound having a molecular extinction coefficient of at least about 50 within a range of about 300 nm to 800 nm (preferably 330 nm to 500 nm).
  • halogenated hydrocarbon derivatives for example, those having a triazine skeleton, those having an oxadiazole skeleton, those having a trihalomethyl group
  • Acylphosphine compounds such as acylphosphine oxide, oxime compounds such as hexaarylbiimidazole and oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenone, azo series
  • examples thereof include compounds, azide compounds, metallocene compounds, organoboron compounds, iron arene complexes, and the like.
  • halogenated hydrocarbon compound having a triazine skeleton examples include those described in Wakabayashi et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in British Patent No. 1388492, a compound described in JP-A-53-133428, a compound described in German Patent No. 3337024, F.I. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964), compound described in JP-A-62-258241, compound described in JP-A-5-281728, compound described in JP-A-5-34920, US Pat. No. 4,221,976 And the compounds described in the book.
  • Examples of the compound described in US Pat. No. 4,221,976 include compounds having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2-trichloromethyl-5 -(2-naphthyl) -1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-tribromomethyl-5- (2-naphthyl) 1,3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (4-chlorostyryl) ) -1,3,4-oxadiazole, 2-trichloromethyl
  • polyhalogen compounds for example, 4-phenyl acridine, such as 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane), N-phenylglycine, and the like Carbon bromide, phenyltribromomethylsulfone, phenyltrichloromethylketone, etc.
  • coumarins for example, 3- (2-benzofuranoyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7- (1- Pyrrolidinyl) coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3′-carbonylbis ( 5,7-di-n-propoxycoumarin), 3,3
  • ketone compound examples include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-Ethoxycarbonylbenzophenone, benzophenonetetracarboxylic acid or tetramethyl ester thereof, 4,4′-bis (dialkylamino) benzophenone (for example, 4,4′-bis (dimethylamino) benzophenone, 4,4′-bisdicyclohexyl) Amino) benzophenone, 4,4′-bis (diethylamino) benzophenone, 4,4′-bis (dihydroxyethylamino) benzophenone, 4-methoxy-4′-dimethylaminobenzofe 4,4'-dimethoxybenzophenone, 4-dimethylaminobenzophenone, 4-di
  • hydroxyacetophenone compounds As the photopolymerization initiator, hydroxyacetophenone compounds, aminoacetophenone compounds, and acylphosphine compounds can also be suitably used. More specifically, for example, aminoacetophenone initiators described in JP-A-10-291969 and acylphosphine oxide initiators described in Japanese Patent No. 4225898 can also be used.
  • hydroxyacetophenone-based initiator IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, IRGACURE-127 (trade names: all manufactured by BASF) can be used.
  • aminoacetophenone-based initiator commercially available products IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF) can be used.
  • aminoacetophenone-based initiator a compound described in JP-A-2009-191179 in which an absorption wavelength is matched with a long-wave light source such as 365 nm or 405 nm can also be used.
  • acylphosphine initiator commercially available products such as IRGACURE-819 and DAROCUR-TPO (trade names: both manufactured by BASF) can be used.
  • More preferable examples of the photopolymerization initiator include oxime compounds.
  • Specific examples of the oxime initiator include compounds described in JP-A No. 2001-233842, compounds described in JP-A No. 2000-80068, and compounds described in JP-A No. 2006-342166.
  • oxime ester compounds examples include J.M. C. S. Perkin II (1979) pp. 1653-1660), J.M. C. S. Perkin II (1979) pp. 156-162, Journal of Photopolymer Science and Technology (1995), pp. 156-162. 202-232, compounds described in JP-A No. 2000-66385, compounds described in JP-A Nos. 2000-80068, JP-T 2004-534797, JP-A No. 2006-342166, and the like.
  • IRGACURE-OXE01 manufactured by BASF
  • IRGACURE-OXE02 manufactured by BASF
  • oxime ester compounds other than those described above compounds described in JP-T-2009-519904 in which oxime is linked to carbazole N-position, compounds described in US Pat. No. 7,626,957 in which a hetero substituent is introduced into the benzophenone moiety, A compound described in Japanese Patent Application Laid-Open No. 2010-15025 and US Patent Publication No. 2009-292039 in which a nitro group is introduced into the dye moiety, a ketoxime compound described in International Patent Publication No. 2009-131189, the triazine skeleton and the oxime skeleton are the same A compound described in US Pat. No. 7,556,910 contained in the molecule, a compound described in Japanese Patent Application Laid-Open No. 2009-221114 having an absorption maximum at 405 nm and good sensitivity to a g-line light source, and the like may be used. .
  • cyclic oxime compounds described in JP-A-2007-231000 and JP-A-2007-322744 can also be suitably used for the cyclic oxime compounds described in JP-A-2007-231000 and JP-A-2007-322744.
  • cyclic oxime compounds in particular, cyclic oxime compounds fused to carbazole dyes described in JP2010-32985A and JP2010-185072A have high light absorptivity and high sensitivity. preferable.
  • the compounds described in JP-A-2009-242469 having an unsaturated bond at a specific site of the oxime compound can be preferably used because high sensitivity can be achieved by regenerating the active radical from the polymerization inert radical. it can.
  • an oxime compound having a specific substituent as disclosed in JP 2007-26997A and an oxime compound having a thioaryl group as disclosed in JP 2009-191061 A can be mentioned.
  • a known method can be used for the molar extinction coefficient of the compound. Specifically, for example, 0.01 g of an ultraviolet-visible spectrophotometer (Carry-5 spctrophotometer manufactured by Varian) is used with an ethyl acetate solvent. It is preferable to measure at a concentration of / L.
  • photo radical polymerization initiator from the viewpoint of exposure sensitivity, trihalomethyltriazine compound, benzyldimethyl ketal compound, ⁇ -hydroxyketone compound, ⁇ -aminoketone compound, acylphosphine compound, phosphine oxide compound, metallocene compound, oxime compound, Selected from the group consisting of triallylimidazole dimer, onium compound, benzothiazole compound, benzophenone compound, acetophenone compound and derivatives thereof, cyclopentadiene-benzene-iron complex and salt thereof, halomethyloxadiazole compound and 3-aryl substituted coumarin compound are preferred.
  • trihalomethyltriazine compounds More preferred are trihalomethyltriazine compounds, ⁇ -aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, oxime compounds, triarylimidazole dimers, onium compounds, benzophenone compounds, acetophenone compounds, trihalomethyltriazine compounds, ⁇ -aminoketones.
  • Most preferred is at least one compound selected from the group consisting of compounds, oxime compounds, triarylimidazole dimers, and benzophenone compounds, and most preferred are oxime compounds.
  • thermal radical polymerization initiator As a compound that generates radicals by heat (hereinafter, also simply referred to as a thermal radical polymerization initiator), a known thermal radical generator can be used.
  • the thermal radical polymerization initiator is a compound that generates radicals by heat energy and initiates or accelerates the polymerization reaction of the polymerizable monomer.
  • temporary adhesion between the member to be treated and the adhesive support is performed after the heat is applied to the adhesive layer formed using the temporary adhesive by adding the thermal radical generator.
  • the adhesiveness that is, tackiness and tackiness
  • thermo radical polymerization initiators include compounds that generate radicals upon irradiation with the above-mentioned actinic rays or radiation, and compounds having a thermal decomposition point in the range of 130 ° C. to 250 ° C., preferably 150 ° C.
  • Thermal radical polymerization initiators include aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, carbon Examples thereof include compounds having a halogen bond and azo compounds. Among these, an organic peroxide or an azo compound is more preferable, and an organic peroxide is particularly preferable. Specifically, compounds described in paragraphs 0074 to 0118 of JP-A-2008-63554 can be mentioned.
  • the temporary adhesive of the present invention contains a thermal radical polymerization initiator as the radical polymerization initiator (C) (more preferably, when it contains a photoradical polymerization initiator and a thermal radical polymerization initiator), particularly
  • the adhesiveness at high temperatures for example, 100 ° C.
  • the adhesiveness at high temperatures can be further improved.
  • the temporary adhesive of the present invention preferably contains a radical photopolymerization initiator. Moreover, the temporary adhesive of this invention may contain a radical polymerization initiator by 1 type, or may contain 2 or more types.
  • the content of the radical polymerization initiator of the present invention is preferably 0.1% by mass or more and 50% by mass or less, more preferably, based on the total solid content of the temporary adhesive. Is 0.1% by mass or more and 30% by mass or less, more preferably 0.1% by mass or more and 20% by mass or less.
  • radical polymerizable monomer or oligomer different from radical polymerizable monomer or oligomer in addition to (A) a radical polymerizable monomer or oligomer having a fluorine atom or a silicon atom, this radical polymerization Radical polymerizable monomer or oligomer different from the polymerizable monomer or oligomer (A), that is, a radical polymerizable monomer or oligomer having no fluorine atom or silicon atom (hereinafter simply referred to as “other radical polymerizable monomer or oligomer”). It is preferable to further contain.
  • Other radical polymerizable monomers or oligomers have radical polymerizable functional groups.
  • the radically polymerizable functional group is typically a group that can be polymerized by the action of a radical.
  • the radical polymerizable functional group is preferably a functional group that can undergo an addition polymerization reaction, and examples of the functional group that can undergo an addition polymerization reaction include an ethylenically unsaturated bond group, an amino group, and an epoxy group.
  • the radical polymerizable functional group may be a functional group capable of generating a radical upon irradiation with light, and examples of such a radical polymerizable functional group include a thiol group and a halogen group.
  • the radically polymerizable functional group is preferably an ethylenically unsaturated bond group.
  • the ethylenically unsaturated bond group a styryl group, a (meth) acryloyl group, and an allyl group are preferable.
  • radical polymerizable monomers or oligomers preferably have two or more radical polymerizable functional groups, whereby the temporary adhesiveness can be further improved.
  • radical polymerizable oligomers include homopolymers composed of repeating units having a radical polymerizable functional group (for example, the repeating unit represented by the above formula (8) described in the radical polymerizable oligomer having a fluorine atom), Alternatively, a repeating unit having a radical polymerizable functional group and a repeating unit having no radical polymerizable functional group (for example, among the radical polymerizable compound (B1) and the ion polymerizable compound (B2) described in detail later, 1 And a copolymer having a repeating unit corresponding to a polymerizable compound having a single polymerizable group.
  • a radical polymerizable functional group for example, the repeating unit represented by the above formula (8) described in the radical polymerizable oligomer having a fluorine atom
  • a repeating unit having a radical polymerizable functional group and a repeating unit having no radical polymerizable functional group for example, among the radical polymerizable compound (
  • the content of the repeating unit having a radical polymerizable functional group is preferably 2 mol% to 98 mol% with respect to all repeating units of the radical polymerizable oligomer, preferably 10 mol%. More preferably, it is ⁇ 90 mol%.
  • the content of the repeating unit having no radical polymerizable functional group is preferably 2 mol% to 98 mol% with respect to all repeating units of the radical polymerizable oligomer, and is preferably 10 mol% to 90 mol%. It is more preferable.
  • the polystyrene-reduced weight average molecular weight of other radical polymerizable oligomers by gel per emission chromatography (GPC) method is preferably 2000 to 10000, more preferably 8000 to 2000, and most preferably 6000 to 2000. .
  • the other radical polymerizable monomer is typically a low molecular weight compound, preferably a low molecular weight compound having a molecular weight of 2000 or less, more preferably a low molecular compound having a molecular weight of 1500 or less, and a low molecular weight having a molecular weight of 900 or less. More preferably, it is a molecular compound.
  • the molecular weight is usually 100 or more.
  • radical polymerizable monomer examples include a radical polymerizable compound (B1) and an ion polymerizable compound (B2).
  • the radical polymerizable compound (B1) is selected from compounds having at least one, preferably two or more radical polymerizable groups.
  • a compound group is widely known in the industrial field, and these can be used without particular limitation in the present invention. These may be in any chemical form such as, for example, monomers, prepolymers, ie dimers, trimers and oligomers, or mixtures thereof and multimers thereof.
  • the radically polymerizable compound in the present invention may be used alone or in combination of two or more.
  • the radical polymerizable group is preferably an ethylenically unsaturated group.
  • a styryl group, a (meth) acryloyl group, and an allyl group are preferable.
  • examples of monomers and prepolymers thereof include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), esters thereof, amides, And multimers thereof.
  • unsaturated carboxylic acids for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.
  • esters of unsaturated carboxylic acids and polyhydric alcohol compounds amides of unsaturated carboxylic acids and polyhydric amine compounds, and multimers thereof.
  • a dehydration condensation reaction product with a functional carboxylic acid is also preferably used.
  • an addition reaction product of an unsaturated carboxylic acid ester or amide having an electrophilic substituent such as an isocyanate group or an epoxy group with a monofunctional or polyfunctional alcohol, amine or thiol, and further a halogen group A substitution reaction product of an unsaturated carboxylic acid ester or amide having a detachable substituent such as a tosyloxy group and a monofunctional or polyfunctional alcohol, amine or thiol is also suitable.
  • esters of polyhydric alcohol compounds and unsaturated carboxylic acids include acrylic acid esters such as ethylene glycol diacrylate, triethylene glycol diacrylate, 1,3-butanediol diacrylate, and tetramethylene glycol diacrylate.
  • Methacrylic acid esters include tetramethylene glycol dimethacrylate, triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, trimethylolpropane trimethacrylate, trimethylolethane trimethacrylate, ethylene glycol dimethacrylate, 1,3-butanediol dimethacrylate, Hexanediol dimethacrylate, pentaerythritol dimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, bis [p- (3-methacryloxy- 2-hydroxyp Epoxy) phenyl] dimethyl methane, bis - [p- (me
  • Itaconic acid esters include ethylene glycol diitaconate, propylene glycol diitaconate, 1,3-butanediol diitaconate, 1,4-butanediol diitaconate, tetramethylene glycol diitaconate, pentaerythritol diitaconate And sorbitol tetritaconate.
  • crotonic acid esters examples include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitol tetradicrotonate.
  • isocrotonic acid esters examples include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate.
  • maleic acid esters examples include ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, and sorbitol tetramaleate.
  • esters examples include aliphatic alcohol esters described in JP-B-46-27926, JP-B-51-47334, JP-A-57-196231, and JP-A-59-5240. Those having an aromatic skeleton described in JP-A-59-5241, JP-A-2-226149, and those containing an amino group described in JP-A-1-165613 are also preferably used.
  • amide monomers of polyvalent amine compounds and unsaturated carboxylic acids include methylene bis-acrylamide, methylene bis-methacrylamide, 1,6-hexamethylene bis-acrylamide, 1,6-hexamethylene bis-methacrylic.
  • examples include amide, diethylenetriamine trisacrylamide, xylylene bisacrylamide, and xylylene bismethacrylamide.
  • Examples of other preferable amide monomers include those having a cyclohexylene structure described in JP-B No. 54-21726.
  • urethane-based addition-polymerizable compounds produced by using an addition reaction of isocyanate and hydroxyl group are also suitable. Specific examples thereof include, for example, one molecule described in JP-B-48-41708.
  • a vinylurethane compound containing two or more polymerizable vinyl groups in one molecule obtained by adding a vinyl monomer containing a hydroxyl group represented by the following general formula (A) to a polyisocyanate compound having two or more isocyanate groups Etc.
  • CH 2 C (R 4) COOCH 2 CH (R 5) OH (A) (However, R 4 and R 5 each independently represent H or CH 3.
  • urethane acrylates as described in JP-A-51-37193, JP-B-2-32293, JP-B-2-16765, JP-B-58-49860, JP-B-56- Urethane compounds having an ethylene oxide skeleton described in Japanese Patent No. 17654, Japanese Patent Publication No. 62-39417, and Japanese Patent Publication No. 62-39418 are also suitable.
  • radical polymerizable compound compounds described in paragraphs 0095 to 0108 of JP-A-2009-288705 can also be preferably used in the present invention.
  • the radical polymerizable compound is also preferably a compound having at least one addition-polymerizable ethylene group and having an ethylenically unsaturated group having a boiling point of 100 ° C. or higher under normal pressure.
  • monofunctional acrylates and methacrylates such as polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, and phenoxyethyl (meth) acrylate; polyethylene glycol di (meth) acrylate, trimethylolethanetri (Meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexanediol (Met
  • a polyfunctional (meth) acrylate obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group such as glycidyl (meth) acrylate and an ethylenically unsaturated group can also be used.
  • a compound having a cyclic ether group such as glycidyl (meth) acrylate and an ethylenically unsaturated group
  • compounds having a fluorene ring and having two or more functional ethylenic groups described in JP 2010-160418 A, JP 2010-129825 A, JP 4364216 A, etc. Resins can also be used.
  • radical polymerizable compound examples include specific unsaturated compounds described in JP-B-46-43946, JP-B-1-40337, JP-B-1-40336, and JP-A-2-25493. Examples thereof include vinylphosphonic acid compounds.
  • a structure containing a perfluoroalkyl group described in JP-A-61-22048 is preferably used.
  • Journal of Japan Adhesion Association vol. 20, no. 7, pages 300 to 308 (1984), which are introduced as photocurable monomers and oligomers can also be used.
  • radically polymerizable compounds represented by the following general formulas (MO-1) to (MO-5) can also be suitably used.
  • T is an oxyalkylene group
  • the terminal on the carbon atom side is bonded to R.
  • n is 0 to 14, and m is 1 to 8.
  • a plurality of R and T present in one molecule may be the same or different.
  • at least one of the plurality of R is —OC ( ⁇ O) CH ⁇ CH 2 , or A group represented by —OC ( ⁇ O) C (CH 3 ) ⁇ CH 2 is represented.
  • Specific examples of the radical polymerizable compounds represented by the above general formulas (MO-1) to (MO-5) include compounds described in paragraph numbers 0248 to 0251 of JP-A No. 2007-26979. Can also be suitably used in the present invention.
  • ethylene oxide or propylene oxide was added to a polyfunctional alcohol described together with specific examples of the compounds represented by the general formulas (1) and (2) described in paragraph No. 0012 of JP-A-10-62986.
  • a compound that is later (meth) acrylated can also be used as the radical polymerizable compound.
  • dipentaerythritol triacrylate (KAYARAD D-330 as a commercial product; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (as a commercial product, KAYARAD D-320; Nippon Kayaku) Dipentaerythritol penta (meth) acrylate (commercially available) KAYARAD D-310 (commercially available), dipentaerythritol hexa (meth) acrylate (commercially available KAYARAD DPHA; Nippon Kayaku Co., Ltd.) And a structure in which these (meth) acryloyl groups are interposed via ethylene glycol and propylene glycol residues. These oligomer types can also be used.
  • the radically polymerizable compound is a polyfunctional monomer and may have an acid group such as a carboxyl group, a sulfonic acid group, or a phosphoric acid group. Therefore, if the ethylenic compound has an unreacted carboxyl group as in the case of a mixture as described above, this can be used as it is.
  • the acid group may be introduced by reacting the group with a non-aromatic carboxylic acid anhydride.
  • non-aromatic carboxylic acid anhydride examples include tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, alkylated hexahydrophthalic anhydride, succinic anhydride, anhydrous Maleic acid is mentioned.
  • the monomer having an acid value is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and a non-aromatic carboxylic acid anhydride is reacted with an unreacted hydroxyl group of the aliphatic polyhydroxy compound.
  • a polyfunctional monomer having an acid group is preferable, and in this ester, the aliphatic polyhydroxy compound is pentaerythritol and / or dipentaerythritol.
  • Examples of commercially available products include M-510 and M-520 as polybasic acid-modified acrylic oligomers manufactured by Toagosei Co., Ltd.
  • a preferable acid value of the polyfunctional monomer having an acid group is 0.1 to 40 mg-KOH / g, and particularly preferably 5 to 30 mg-KOH / g. If the acid value of the polyfunctional monomer is too low, the developing dissolution properties are lowered, and if it is too high, the production and handling are difficult, the photopolymerization performance is lowered, and the curability such as the surface smoothness of the pixel is deteriorated.
  • the acid groups as the entire polyfunctional monomer should be adjusted so as to fall within the above range. Is essential.
  • the polyfunctional monomer having a caprolactone structure is not particularly limited as long as it has a caprolactone structure in the molecule.
  • R 1 represents a hydrogen atom or a methyl group
  • m represents a number of 1 or 2
  • “*” represents a bond.
  • R 1 represents a hydrogen atom or a methyl group, and “*” represents a bond.
  • the polyfunctional monomer which has a caprolactone structure can be used individually or in mixture of 2 or more types.
  • the polyfunctional monomer is preferably at least one selected from the group of compounds represented by the following general formula (i) or (ii).
  • each E independently represents — ((CH 2 ) yCH 2 O) — or — ((CH 2 ) yCH (CH 3 ) O) —, and y Each independently represents an integer of 0 to 10, and each X independently represents an acryloyl group, a methacryloyl group, a hydrogen atom, or a carboxyl group.
  • the total number of acryloyl groups and methacryloyl groups is 3 or 4
  • each m independently represents an integer of 0 to 10
  • the total of each m is an integer of 0 to 40. However, when the total of each m is 0, any one of X is a carboxyl group.
  • the total number of acryloyl groups and methacryloyl groups is 5 or 6, each n independently represents an integer of 0 to 10, and the total of each n is an integer of 0 to 60. However, when the total of each n is 0, any one of X is a carboxyl group.
  • m is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of each m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and particularly preferably an integer of 4 to 8.
  • n is preferably an integer of 0 to 6, and more preferably an integer of 0 to 4.
  • the total of each n is preferably an integer of 3 to 60, more preferably an integer of 3 to 24, and particularly preferably an integer of 6 to 12.
  • the compounds represented by the general formula (i) or (ii) may be used alone or in combination of two or more.
  • a form in which all six Xs are acryloyl groups is preferable.
  • the total content of the compound represented by the general formula (i) or (ii) in the radical polymerizable compound is preferably 20% by mass or more, and more preferably 50% by mass or more.
  • the compound represented by the above general formula (i) or (ii) is a ring-opening skeleton obtained by ring-opening addition reaction of ethylene oxide or propylene oxide with pentaerythritol or dipentaerythritol, which is a conventionally known process. And a step of reacting, for example, (meth) acryloyl chloride with the terminal hydroxyl group of the ring-opening skeleton to introduce a (meth) acryloyl group. Each step is a well-known step, and a person skilled in the art can easily synthesize a compound represented by the general formula (i) or (ii).
  • pentaerythritol derivatives and / or dipentaerythritol derivatives are more preferable.
  • Specific examples include compounds represented by the following formulas (a) to (f) (hereinafter also referred to as “exemplary compounds (a) to (f)”).
  • exemplary compounds (a), (f) b), (e) and (f) are preferred.
  • Examples of commercially available radical polymerizable compounds represented by the general formulas (i) and (ii) include SR-494, a tetrafunctional acrylate having four ethyleneoxy chains manufactured by Sartomer, manufactured by Nippon Kayaku Co., Ltd. DPCA-60, which is a hexafunctional acrylate having six pentyleneoxy chains, and TPA-330, which is a trifunctional acrylate having three isobutyleneoxy chains.
  • radical polymerizable compound examples include urethane acrylates described in JP-B-48-41708, JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765, Urethane compounds having an ethylene oxide skeleton described in JP-B-58-49860, JP-B-56-17654, JP-B-62-39417, and JP-B-62-39418 are also suitable.
  • polymerizable compounds addition polymerizable compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238 are exemplified. It can also be used.
  • urethane oligomers UAS-10, UAB-140 (manufactured by Sanyo Kokusaku Pulp Co., Ltd.), UA-7200 "(manufactured by Shin-Nakamura Chemical Co., Ltd., DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA -306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha) and the like.
  • radical polymerizable compound a polyfunctional thiol compound having two or more mercapto (SH) groups in the same molecule is also suitable. Particularly preferred are those represented by the following general formula (I).
  • R1 is an alkyl group
  • R2 is an n-valent aliphatic group that may contain atoms other than carbon
  • R0 is an alkyl group that is not H
  • n represents 2 to 4
  • polyfunctional thiol compound represented by the general formula (I) is specifically exemplified, 1,4-bis (3-mercaptobutyryloxy) butane [formula (II)] having the following structural formula: 1,3,5-tris (3-mercaptobutyloxyethyl) -1,3,5-triasian-2,4,6 (1H, 3H5H) -trione [formula (III)], and pentaerythritol tetrakis (3 -Mercaptobutyrate) [formula (IV)] and the like.
  • These polyfunctional thiols can be used alone or in combination.
  • the compounding amount of the polyfunctional thiol in the temporary adhesive is 0.3 to 8.9% by mass, more preferably 0.8 to 6.4% by mass, based on the total solid content excluding the solvent. It is desirable to do.
  • a polyfunctional thiol By adding a polyfunctional thiol, the stability, odor, sensitivity, adhesion, etc. of the temporary adhesive can be improved.
  • the details of the usage method such as the structure, single use or combination, addition amount, etc. can be arbitrarily set according to the final performance design of the temporary adhesive.
  • a structure having a high unsaturated group content per molecule is preferable, and in many cases, a bifunctional or higher functionality is preferable.
  • those having three or more functionalities are preferable, and those having different functional numbers and different polymerizable groups (for example, acrylic acid esters, methacrylic acid esters, styrene compounds, vinyl ether compounds).
  • a radically polymerizable compound having a trifunctional or higher functional group and different ethylene oxide chain length is also preferable to use.
  • a radically polymerizable compound having a trifunctional or higher functional group and different ethylene oxide chain length is also preferable to use.
  • the selection and use method of the radical polymerizable compound is an important factor.
  • the compatibility may be improved by using a low-purity compound or using two or more kinds in combination.
  • a specific structure may be selected from the viewpoint of improving the adhesion with the carrier substrate.
  • Examples of the ion polymerizable compound (B2) include an epoxy compound (B21) having 3 to 20 carbon atoms and an oxetane compound (B22) having 4 to 20 carbon atoms.
  • Examples of the epoxy compound (B21) having 3 to 20 carbon atoms include the following monofunctional or polyfunctional epoxy compounds.
  • the monofunctional epoxy compound include phenyl glycidyl ether, p-tert-butylphenyl glycidyl ether, butyl glycidyl ether, 2-ethylhexyl glycidyl ether, allyl glycidyl ether, 1,2-butylene oxide, and 1,3-butadiene monooxide.
  • 1,2-epoxydodecane epichlorohydrin, 1,2-epoxydecane, styrene oxide, cyclohexene oxide, 3-methacryloyloxymethylcyclohexene oxide, 3-acryloyloxymethylcyclohexene oxide and 3-vinylcyclohexene oxide .
  • polyfunctional epoxy compound examples include bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, brominated bisphenol A diglycidyl ether, brominated bisphenol F diglycidyl ether, and brominated bisphenol S diglycidyl ether.
  • Epoxy novolac resin hydrogenated bisphenol A diglycidyl ether, hydrogenated bisphenol F diglycidyl ether, hydrogenated bisphenol S diglycidyl ether, 3,4-epoxycyclohexylmethyl-3 ', 4'-epoxycyclohexanecarboxylate, 2- (3,4-epoxycyclohexyl-5,5-spiro-3,4-epoxy) cyclohexane-meta-dioxane, bis (3,4-epoxycyclohexyl) Methyl) adipate, vinylcyclohexene oxide, 4-vinylepoxycyclohexane, bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate, 3,4-epoxy-6-methylcyclohexyl-3 ′, 4′-epoxy-6 '-Methylcyclohexanecarboxylate, methylenebis (3,4-epoxycyclo
  • aromatic epoxides and alicyclic epoxides are preferable, and alicyclic epoxides are particularly preferable from the viewpoint of excellent polymerization rate.
  • Examples of the oxetane compound (B22) having 4 to 20 carbon atoms include compounds having 1 to 6 oxetane rings.
  • Examples of the compound having one oxetane ring include 3-ethyl-3-hydroxymethyloxetane, 3- (meth) allyloxymethyl-3-ethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, 4 -Fluoro- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, 4-methoxy- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, [1- (3-ethyl-3 -Oxetanylmethoxy) ethyl] phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxet
  • Examples of the compound having 2 to 6 oxetane rings include 3,7-bis (3-oxetanyl) -5-oxa-nonane, 3,3 ′-(1,3- (2-methylenyl) propanediylbis ( Oxymethylene)) bis- (3-ethyloxetane), 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 1,2-bis [(3-ethyl-3-oxetanylmethoxy) methyl ] Ethane, 1,3-bis [(3-ethyl-3-oxetanylmethoxy) methyl] propane, ethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenylbis (3-ethyl-3-oxetanyl) Methyl) ether, triethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether,
  • the content of the other radically polymerizable monomer or oligomer is preferably 30 to 90% by mass, and preferably 40 to 90% by mass with respect to the total solid content of the temporary adhesive from the viewpoint of good adhesive strength and peelability. More preferred is 50 to 85% by mass.
  • the content ratio (mass ratio) of the other radical polymerizable monomer or oligomer and the polymer compound (B) is preferably 90/10 to 10/90, and 85/15 to 40/60. More preferably.
  • the temporary adhesive of the present invention may contain a compound that generates an acid upon irradiation or heating with actinic rays or radiation (hereinafter also simply referred to as “acid generator”).
  • produces an acid by irradiation of actinic light or a radiation
  • the acid-generating compound include trichloromethyl-s-triazines, sulfonium salts and iodonium salts, quaternary ammonium salts, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. Among these, it is preferable to use an oxime sulfonate compound from the viewpoint of high sensitivity.
  • These acid generators can be used singly or in combination of two or more.
  • acid generator examples include acid generators described in JP-A 2012-8223, paragraphs [0073] to [0095].
  • the content of the compound that generates radicals or acids upon irradiation with actinic rays or radiation of the present invention is 0.1% by mass or more and 50% by mass with respect to the total solid content of the temporary adhesive.
  • % Is preferably 0.1% by mass or more and 30% by mass or less, and more preferably 0.1% by mass or more and 20% by mass or less.
  • thermal acid generator As a compound that generates an acid by heat (hereinafter, also simply referred to as a thermal acid generator), a known thermal acid generator can be used.
  • the thermal acid generator is preferably a compound having a thermal decomposition point in the range of 130 ° C. to 250 ° C., more preferably 150 ° C. to 220 ° C.
  • the thermal acid generator is, for example, a compound that generates a low nucleophilic acid such as sulfonic acid, carboxylic acid, or disulfonylimide by heating.
  • the acid generated from the thermal acid generator is preferably a sulfonic acid, an alkyl or aryl carboxylic acid substituted with an electron withdrawing group, a disulfonylimide substituted with an electron withdrawing group, or the like having a strong pKa of 2 or less.
  • the electron withdrawing group include a halogen atom such as a fluorine atom, a haloalkyl group such as a trifluoromethyl group, a nitro group, and a cyano group.
  • a photoacid generator that generates an acid upon irradiation with the actinic ray or radiation can be applied.
  • Examples thereof include onium salts such as sulfonium salts and iodonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates, o-nitrobenzyl sulfonates and the like.
  • onium salts such as sulfonium salts and iodonium salts, N-hydroxyimide sulfonate compounds, oxime sulfonates, o-nitrobenzyl sulfonates and the like.
  • the molecular weight of the sulfonic acid ester is preferably 230 to 1,000, more preferably 230 to 800.
  • a commercially available one may be used, or one synthesized by a known method may be used.
  • the sulfonic acid ester can be synthesized, for example, by reacting a sulfonyl chloride or a sulfonic acid anhydride with a corresponding polyhydric alcohol under basic conditions.
  • a thermal acid generator may be used individually by 1 type, or may use 2 or more types together.
  • the content of the acid generator in the temporary adhesive of the present invention is reduced in the adhesiveness of the adhesive layer when heat irradiation is performed before temporary bonding between the member to be processed and the adhesive support, and processed From the viewpoint of improving the adhesiveness of the adhesive layer when heat irradiation is performed after temporary adhesion between the member and the adhesive support, 0.01 to 50% by mass is preferable with respect to the total solid content of the adhesive composition. 0.1 to 20% by mass is more preferable, and 0.5 to 10% by mass is most preferable.
  • the temporary adhesive of the present invention preferably contains a chain transfer agent.
  • the chain transfer agent is defined, for example, in Polymer Dictionary 3rd Edition (edited by the Polymer Society, 2005) pages 683-684.
  • As the chain transfer agent for example, a compound group having SH, PH, SiH, GeH in the molecule is used. These can donate hydrogen to low-activity radical species to generate radicals, or can be oxidized and then deprotonated to generate radicals.
  • thiol compounds for example, 2-mercaptobenzimidazoles, 2-mercaptobenzthiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazoles, etc.
  • 2-mercaptobenzimidazoles, 2-mercaptobenzthiazoles, 2-mercaptobenzoxazoles, 3-mercaptotriazoles, 5-mercaptotetrazoles, etc. are preferably used as the temporary adhesive. be able to.
  • the content of the chain transfer agent is preferably 0.01 to 20 parts by weight, more preferably 1 to 10 parts by weight, and particularly preferably 1 to 5 parts by weight with respect to 100 parts by weight of the total solid content of the temporary adhesive. is there.
  • a small amount of a polymerization inhibitor is preferably added to the temporary adhesive of the present invention in order to prevent unnecessary thermal polymerization of the radical polymerizable monomer during the production or storage of the temporary adhesive.
  • the polymerization inhibitor include hydroquinone, p-methoxyphenol, di-t-butyl-p-cresol, pyrogallol, t-butylcatechol, benzoquinone, 4,4'-thiobis (3-methyl-6-t-butylphenol ), 2,2'-methylenebis (4-methyl-6-t-butylphenol), and N-nitroso-N-phenylhydroxylamine aluminum salt.
  • the addition amount of the polymerization inhibitor is preferably about 0.01 to about 5% by mass with respect to the total solid content of the temporary adhesive.
  • a higher fatty acid derivative such as behenic acid or behenic acid amide is added to the temporary adhesive of the present invention. It may be unevenly distributed.
  • the amount of the higher fatty acid derivative added is preferably about 0.1 to about 10% by mass with respect to the total solid content of the temporary adhesive.
  • the temporary adhesive of the present invention can be added to various additives such as a curing agent, a curing catalyst, a silane coupling agent, a filler, an adhesion promoter, an oxidation as long as the effects of the present invention are not impaired.
  • a curing agent such as a curing agent, a curing catalyst, a silane coupling agent, a filler, an adhesion promoter, an oxidation as long as the effects of the present invention are not impaired.
  • An inhibitor, an ultraviolet absorber, an aggregation inhibitor and the like can be blended.
  • the temporary adhesive for manufacturing a semiconductor device of the present invention can be applied after being dissolved in a solvent (usually an organic solvent).
  • a solvent usually an organic solvent.
  • the solvent is basically not particularly limited as long as the solubility of each component and the application property of the temporary adhesive are satisfied.
  • organic solvents examples include esters such as ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, and ethyl lactate.
  • Alkyl oxyacetates eg, methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (eg, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate)
  • alkyl 3-oxypropionate Esters eg, methyl 3-oxypropionate, ethyl 3-oxypropionate, etc.
  • Oxypropionic acid alkyl esters eg, methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc.
  • ethers For example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate and the like, and ketones such as methyl ethyl ketone (2-butanone), cyclohexanone, 2-heptanone, 3-heptanone, methyl amyl ketone, etc.
  • aromatic hydrocarbons include toluene and xylene
  • examples of other organic solvents include N-methyl-2-pyrrolidone
  • solvents are preferably mixed in two or more types from the viewpoint of improving the coated surface.
  • It is a mixed solution composed of two or more selected from carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate.
  • the solvent is preferably N-methyl-2-pyrrolidone, 2-butanone, methyl amyl ketone, limonene, or propylene glycol monomethyl ether acetate (PGMEA).
  • the content of the solvent in the temporary adhesive coating solution is preferably such that the total solid concentration of the temporary adhesive is 5 to 80% by mass, more preferably 5 to 70% by mass.
  • the total solid concentration of the temporary adhesive is 5 to 80% by mass, more preferably 5 to 70% by mass.
  • 5 to 60% by mass is more preferable, and 10 to 60% by mass is particularly preferable.
  • surfactant Various surfactants may be added to the temporary adhesive of the present invention from the viewpoint of further improving applicability.
  • various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used.
  • the temporary adhesive of the present invention contains a fluorosurfactant, so that liquid properties (particularly fluidity) when prepared as a coating solution are further improved.
  • Liquidity can be further improved. That is, when a film is formed using a coating liquid to which a temporary adhesive containing a fluorosurfactant is applied, wetting the coated surface by reducing the interfacial tension between the coated surface and the coating liquid. The coating property is improved and the coating property to the coated surface is improved. For this reason, even when a thin film of about several ⁇ m is formed with a small amount of liquid, it is effective in that it is possible to more suitably form a film having a uniform thickness with small thickness unevenness.
  • the fluorine content in the fluorosurfactant is preferably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, and particularly preferably 7% by mass to 25% by mass.
  • a fluorine-based surfactant having a fluorine content within this range is effective in terms of uniformity in the thickness of the coating film and liquid-saving properties, and has good solubility in the temporary adhesive.
  • fluorosurfactant examples include Megafac F171, F172, F173, F176, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780, F780, F781 (above DIC Corporation), Florard FC430, FC431, FC171 (above, Sumitomo 3M Limited), Surflon S-382, SC-101, Same SC-103, Same SC-104, Same SC-105, Same SC1068, Same SC-381, Same SC-383, Same S393, Same KH-40 (manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320 PF6520, PF7002 (manufactured by OMNOVA), and the like.
  • nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerin ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62 manufactured by BASF, 10R5, 17R2, 25R2, Tetronic 304, 701, 704, 901, 904, 150R1, Sparse 20000 (manufactured by Nippon Lubrizol Corporation), and the like.
  • cationic surfactant examples include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.) and the like.
  • phthalocyanine derivatives trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.
  • organosiloxane polymer KP341 manufactured by Shin-Etsu Chemical Co., Ltd.
  • (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 manufactured by Kyoeisha Chemical Co., Ltd.
  • W001 manufactured by Yusho Co., Ltd.
  • anionic surfactants include W004, W005, W017 (manufactured by Yusho Co., Ltd.) and the like.
  • silicone surfactant examples include “Toray Silicone DC3PA”, “Toray Silicone SH7PA”, “Tore Silicone DC11PA”, “Tore Silicone SH21PA”, “Tore Silicone SH28PA”, “Toray Silicone” manufactured by Toray Dow Corning Co., Ltd.
  • FIG. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and schematic cross-sections illustrating a state in which the device wafer temporarily bonded by the adhesive support is thinned.
  • FIG. 1A and 1B are schematic cross-sectional views illustrating temporary bonding between an adhesive support and a device wafer, and schematic cross-sections illustrating a state in which the device wafer temporarily bonded by the adhesive support is thinned.
  • an adhesive support 100 in which an adhesive layer 11 is provided on a carrier substrate 12 is prepared.
  • the material of the carrier substrate 12 is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, and a metal substrate.
  • a silicon substrate that is typically used as a substrate of a semiconductor device is hardly contaminated, and a semiconductor device is manufactured.
  • an electrostatic chuck widely used in the process can be used, a silicon substrate is preferable.
  • the thickness of the carrier substrate 12 is, for example, in the range of 300 ⁇ m to 5 mm, but is not particularly limited.
  • the adhesive layer 11 is formed by applying the temporary adhesive for manufacturing a semiconductor device of the present invention to a carrier substrate 12 using a conventionally known spin coating method, spray method, roller coating method, flow coating method, doctor coating method, dipping method, or the like. It can be formed by coating on top and then drying.
  • the thickness of the adhesive layer 11 is, for example, in the range of 1 to 500 ⁇ m, but is not particularly limited.
  • the device wafer 60 (member to be processed) is formed by providing a plurality of device chips 62 on a surface 61a of a silicon substrate 61.
  • the thickness of the silicon substrate 61 is in the range of 200 to 1200 ⁇ m, for example.
  • the surface 61 a of the silicon substrate 61 is pressed against the adhesive layer 11 of the adhesive support 100. Thereby, the surface 61a of the silicon substrate 61 and the adhesive layer 11 are bonded, and the adhesive support 100 and the device wafer 60 are temporarily bonded.
  • the electrical resistance value of the adhesive layer 11 is preferably 4 ⁇ or more.
  • the adhesive support body 100 and the device wafer 60 may be heated (irradiated with heat) to make the adhesive layer more tough.
  • the heating temperature is preferably 50 ° C to 300 ° C, more preferably 100 ° C to 250 ° C, and still more preferably 150 ° C to 220 ° C.
  • the heating time is preferably 20 seconds to 10 minutes, more preferably 30 seconds to 5 minutes, and even more preferably 40 seconds to 3 minutes.
  • the back surface 61b of the silicon substrate 61 is subjected to mechanical or chemical treatment, specifically, thinning treatment such as grinding or chemical mechanical polishing (CMP).
  • the thickness of the silicon substrate 61 is reduced (for example, a thickness of 1 to 200 ⁇ m) to obtain a thin device wafer 60 ′.
  • a through hole (not shown) penetrating the silicon substrate is formed from the back surface 61b ′ of the thin device wafer 60 ′ after the thinning process, and the silicon is penetrated into the through hole. You may perform the process which forms an electrode (not shown) as needed.
  • the surface 61 a of the thin device wafer 60 ′ is detached from the adhesive layer 11 of the adhesive support 100.
  • the method of detachment is not particularly limited, but the adhesive layer 110 is brought into contact with the stripping solution, and then the thin device wafer 60 ′ is slid with respect to the adhesive support 100 as necessary. Alternatively, it is preferable that the thin device wafer 60 ′ is peeled off from the adhesive support 100. Since the temporary adhesive of the present invention has a high affinity for the stripping solution, the temporary adhesion between the adhesive layer 110 and the surface 61a of the thin device wafer 60 ′ can be easily released by the above method.
  • the desorption method may be mechanical peeling.
  • the thin device wafer 60 ′ is detached from the adhesive support 100, various known processes are performed on the thin device wafer 60 ′ as necessary to manufacture a semiconductor device having the thin device wafer 60 ′. To do.
  • the stripping solution water and the above-described solvent (organic solvent) can be used.
  • the stripping solution is also preferably an organic solvent such as 2-heptanone, limonene, acetone, and p-menthane.
  • the stripping solution is limonene or p-menthane.
  • limonene is more preferable.
  • the stripping solution may contain an alkali, an acid, and a surfactant.
  • a form in which two or more organic solvents and water, two or more alkalis, an acid, and a surfactant are mixed is also preferable.
  • alkali examples include tribasic sodium phosphate, tribasic potassium phosphate, tribasic ammonium phosphate, dibasic sodium phosphate, dibasic potassium phosphate, dibasic ammonium phosphate, sodium carbonate, potassium carbonate, and ammonium carbonate.
  • Inorganic alkali agents such as sodium bicarbonate, potassium bicarbonate, ammonium bicarbonate, sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide and lithium hydroxide, monomethylamine, Dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanolamine Emissions, monoisopropanolamine, diisopropanolamine, ethyleneimine, ethylenediamine, pyridine, may be used an organic alkali agent such as tetramethylammonium hydroxide. These alkali agents can be used alone or in combination of two or more.
  • Acids include inorganic acids such as hydrogen halides, sulfuric acid, nitric acid, phosphoric acid, boric acid, methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid
  • Organic acids such as formic acid, gluconic acid, lactic acid, oxalic acid and tartaric acid can be used.
  • the surfactant an anionic, cationic, nonionic or zwitterionic surfactant can be used.
  • the content of the surfactant is preferably 1 to 20% by mass and more preferably 1 to 10% by mass with respect to the total amount of the alkaline aqueous solution.
  • anionic surfactant examples include, but are not limited to, fatty acid salts, abietic acid salts, hydroxyalkane sulfonic acid salts, alkane sulfonic acid salts, dialkyl sulfosuccinic acid salts, linear alkyl benzene sulfonic acid salts, branched alkyl benzene sulfonic acid salts, Alkylnaphthalene sulfonates, alkyl diphenyl ether (di) sulfonates, alkylphenoxy polyoxyethylene alkyl sulfonates, polyoxyethylene alkyl sulfophenyl ether salts, N-alkyl-N-oleyl taurine sodium, N-alkyl sulfosuccinic acid Monoamide disodium salts, petroleum sulfonates, sulfated castor oil, sulfated beef tallow oil, sulfate esters of fatty acids
  • the cationic surfactant is not particularly limited, and conventionally known cationic surfactants can be used. Examples thereof include alkylamine salts, quaternary ammonium salts, alkyl imidazolinium salts, polyoxyethylene alkylamine salts, and polyethylene polyamine derivatives.
  • the nonionic surfactant is not particularly limited, but is a polyethylene glycol type higher alcohol ethylene oxide adduct, alkylphenol ethylene oxide adduct, alkyl naphthol ethylene oxide adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid.
  • Ethylene oxide adduct polyhydric alcohol fatty acid ester ethylene oxide adduct, higher alkylamine ethylene oxide adduct, fatty acid amide ethylene oxide adduct, fat and oil ethylene oxide adduct, polypropylene glycol ethylene oxide adduct, dimethylsiloxane-ethylene oxide block Copolymer, dimethylsiloxane- (propylene oxide-ethylene oxide) block copolymer , Fatty acid esters of polyhydric alcohol type glycerol, fatty acid esters of pentaerythritol, fatty acid esters of sorbitol and sorbitan, fatty acid esters of sucrose, alkyl ethers of polyhydric alcohols, fatty acid amides of alkanolamines.
  • those having an aromatic ring and an ethylene oxide chain are preferable, and an alkyl-substituted or unsubstituted phenol ethylene oxide adduct or an alkyl-substituted or unsubstituted naphthol ethylene oxide adduct is more preferable.
  • Zwitterionic surfactants include, but are not limited to, amine oxides such as alkyldimethylamine oxide, betaines such as alkylbetaines, and amino acids such as sodium alkylamino fatty acids.
  • alkyldimethylamine oxide which may have a substituent alkylcarboxybetaine which may have a substituent
  • alkylsulfobetaine which may have a substituent
  • a compound represented by the formula (VI) or a compound represented by paragraph numbers [0022] to [0029] of JP-A-2009-47927 can be used.
  • additives such as an antifoaming agent and a water softening agent can be contained as required.
  • FIG. 2 is a schematic cross-sectional view for explaining the release of the temporarily bonded state between the conventional adhesive support and the device wafer.
  • an adhesive support in which an adhesive layer 11 ′ formed of a conventional temporary adhesive is provided on a carrier substrate 12 as an adhesive support.
  • the adhesive support 100 ′ and the device wafer are temporarily bonded in the same manner as described with reference to FIGS. 1A and 1B, and the silicon substrate is thinned on the device wafer.
  • the thin device wafer 60 ′ is peeled from the adhesive support 100 ′.
  • the conventional temporary adhesive it is difficult to easily release the temporary support for the processed member without temporarily damaging the processed member with high adhesive force and damaging the processed member.
  • a highly temporary adhesive is used among the conventional temporary adhesives, the temporary adhesion between the device wafer and the carrier substrate tends to be too strong. Become. Therefore, in order to release this excessively strong temporary adhesion, for example, as shown in FIG. 3, a tape (for example, dicing tape) 70 is attached to the back surface 61b ′ of the thin device wafer 60 ′, and the adhesive support 120 is thinned.
  • the adhesive layer formed by the temporary adhesive of the present invention exhibits sufficient adhesiveness, and the temporary adhesion between the device wafer 60 and the adhesive support 100 is particularly applied to the adhesive layer 11 as a peeling solution. Can be easily released by bringing them into contact. That is, according to the temporary adhesive of the present invention, the device wafer 60 can be temporarily supported by a high adhesive force, and the temporary support for the thin device wafer 60 ′ can be easily released without damaging the thin device wafer 60 ′. .
  • FIG. 2 is a schematic cross-sectional view showing a state in which a thin film is thinned, a schematic cross-sectional view showing a thin device wafer with a protective layer peeled from an adhesive support, and a schematic cross-sectional view showing a thin device wafer.
  • 4A and 4B are a schematic cross-sectional view illustrating a state in which a device wafer temporarily bonded by an adhesive support is thinned, and a device wafer with a protective layer temporarily bonded by an adhesive support. It is a schematic sectional drawing explaining the state reduced in thickness.
  • a device wafer 160 with a protective layer may be used instead of the device wafer 60.
  • the protective layer-equipped device wafer 160 is provided on the surface 61a of the silicon substrate 61 (substrate to be processed) provided with a plurality of device chips 62 on the surface 61a and the surface 61a of the silicon substrate 61 to protect the device chips 62.
  • a protective layer 80 is, for example, in the range of 1 to 1000 ⁇ m.
  • the protective layer 80 a known layer can be used without limitation, but a layer that can reliably protect the device chip 62 is preferable.
  • a well-known compound can be used without a restriction
  • the surface 160a (the surface of the protective layer 80 opposite to the silicon substrate 61) of the device wafer 160 with the protective layer is pressed against the adhesive layer 11 of the adhesive support 100. Thereby, the surface 160a of the device wafer 160 with a protective layer and the adhesive layer 21 are bonded, and the adhesive support 100 and the device wafer 160 with a protective layer are temporarily bonded.
  • the thickness of the silicon substrate 61 is reduced (for example, a silicon substrate 61 ′ having a thickness of 1 to 200 ⁇ m is formed) to obtain a thin device wafer 160 ′ with a protective layer.
  • the surface 160a of the thin device wafer 160 ′ with a protective layer is detached from the adhesive layer 11 of the adhesive support 100 to obtain a thin device wafer 160 ′ with a protective layer as shown in FIG. 3C. .
  • the protective layer 80 in the thin device wafer 160 ′ with the protective layer from the silicon substrate 61 ′ and the device chip 62 the device chip 62 is provided on the silicon substrate 61 ′ as shown in FIG. 3D.
  • a thin device wafer is obtained.
  • any known one can be adopted. For example, (1) a method of dissolving and removing the protective layer 80 with a solvent; (2) attaching a peeling tape or the like to the protective layer 80 for protection A method of mechanically peeling the layer 80 from the silicon substrate 61 ′ and the device chip 62; (3)
  • the protective layer 80 is exposed to light such as ultraviolet rays and infrared rays or laser irradiation to the protective layer 80.
  • Examples of the method include decomposing and improving the peelability of the protective layer 80.
  • the above (1) and (3) have an advantage that the protective layer 80 can be easily removed because the action in these methods is performed on the entire surface of the protective film.
  • the above (2) has an advantage that it can be implemented without requiring a special apparatus at room temperature.
  • the form using the device wafer 160 with a protective layer instead of the device wafer 60 as the member to be processed is a thin device wafer TTV (Total Thickness) obtained by thinning the device wafer 60 temporarily bonded by the adhesive support 100.
  • TTV Total Thickness
  • This is effective when it is desired to further reduce the variation (that is, when it is desired to further improve the flatness of the thin device wafer). That is, when the device wafer 60 temporarily bonded by the adhesive support 100 is thinned, as shown in FIG. 4A, the concavo-convex shape of the device wafer 60 formed by the plurality of device chips 62 is a thin device wafer 60 ′.
  • the back surface 61b ′ of the film tends to be transferred, and can be an element that increases TTV.
  • the temporary adhesive of this invention contains a thermal radical polymerization initiator as a radical polymerization initiator (C)
  • the adhesive layer 11 be an adhesive layer from which adhesiveness reduces by heat irradiation. be able to.
  • the adhesive layer 11 is a layer having adhesiveness before being irradiated with heat, but the layer in which the adhesiveness is reduced or disappeared in the region irradiated with heat. It can be.
  • the temporary adhesive of the present invention contains a radical photopolymerization initiator as the radical polymerization initiator (C)
  • the adhesive property of the adhesive layer 11 is reduced by irradiation with actinic rays or radiation. It can be a layer.
  • the adhesive layer is a layer having adhesiveness before being irradiated with actinic rays or radiation. It can be a layer that decreases or disappears.
  • the active ray or the active ray or the surface of the adhesive layer 11 of the adhesive support 100 is bonded to the device wafer 60. Radiation or heat may be applied.
  • the adhesive layer is converted into an adhesive layer in which a low-adhesive region and a high-adhesive region are formed by irradiation with actinic light, radiation, or heat, and then temporarily bonded by an adhesive support of a member to be processed. May be performed.
  • this embodiment will be described.
  • FIG. 5A shows a schematic cross-sectional view for explaining exposure to the adhesive support
  • FIG. 5B shows a schematic top view of the mask.
  • an actinic ray or radiation 50 is irradiated (that is, exposed) to the adhesive layer 11 of the adhesive support 100 through the mask 40.
  • the mask 40 includes a light transmission region 41 provided in the central region and a light shielding region 42 provided in the peripheral region. Therefore, the exposure is pattern exposure in which the central region of the adhesive layer 11 is exposed but the peripheral region surrounding the central region is not exposed.
  • FIG. 6A shows a schematic sectional view of the adhesive support subjected to pattern exposure
  • FIG. 6B shows a schematic top view of the adhesive support subjected to pattern exposure.
  • the adhesive support 100 when the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with actinic rays or radiation, the adhesive support 100 is formed as shown in FIG. As shown to 6B, it converts into the adhesive support body 110 which has the adhesive layer 21 in which the low adhesiveness area
  • the “low adhesion region” in the present specification means a region having lower adhesion compared to the “high adhesion region” and is a region having no adhesion (that is, “non-adhesion region”). Sex region ").
  • the “high adhesion region” means a region having higher adhesion than the “low adhesion region”.
  • the adhesive support 110 is provided with the low adhesive region 21A and the high adhesive region 21B by pattern exposure using the mask 40, and the areas of the light transmitting region and the light shielding region in the mask 40 are as follows.
  • the shape can be controlled on the order of microns or nanometers. Therefore, the area and shape of the high adhesive region 21B and the low adhesive region 21A formed on the adhesive layer 21 of the adhesive support 110 by pattern exposure can be finely controlled, so that the adhesive layer as a whole can be controlled.
  • Adhesiveness can more reliably and easily temporarily support the silicon substrate 61 of the device wafer 60, and more easily release the temporary support of the thin device wafer 60 ′ to the silicon substrate without damaging the thin device wafer 60 ′. Highly accurate and easily controllable to the possible adhesiveness.
  • the surface properties of the high adhesive region 21B and the low adhesive region 21A in the adhesive support 110 are different due to pattern exposure, they are integrated as a structure. Therefore, there is no significant difference in mechanical properties between the high adhesive region 21B and the low adhesive region 21A, and the surface 61a of the silicon substrate 61 of the device wafer 60 is bonded to the adhesive layer 21 of the adhesive support 110, Next, even if the back surface 61b of the silicon substrate 61 is subjected to a thinning process or a process of forming a silicon through electrode, the region of the back surface 61b corresponding to the high adhesive region 21B of the adhesive layer 21 and the low adhesive region 21A A difference in pressure (for example, grinding pressure or polishing pressure) related to the above processing hardly occurs between the corresponding back surface 61b regions, and the high adhesive region 21B and the low adhesive region 21A are used in the above processing. There is little impact on processing accuracy. This is particularly effective when a thin device wafer 60 'having a thickness of 1 to 200 .
  • the silicon substrate 61 is temporarily supported more reliably and easily while suppressing the influence on the processing accuracy when the silicon substrate 61 of the device wafer 60 is subjected to the above processing.
  • the temporary support to the thin device wafer 60 ′ can be easily released without damaging the thin device wafer 60 ′.
  • FIG. 7 is a schematic cross-sectional view for explaining irradiation of actinic rays, radiation or heat to the adhesive support.
  • the adhesive support 100 is changed from the inner surface 31b on the substrate side to the outer surface 31a as shown in FIG. It is converted into an adhesive support 120 having an adhesive layer 31 whose adhesiveness has been lowered. That is, the adhesive layer 31 has a low adhesive region 31A on the outer surface 31a side and a high adhesive region 31B on the inner surface 31b side.
  • Such an adhesive layer 31 is irradiated with actinic rays, radiation, or heat 50, and the outer surface 31a is sufficiently irradiated with actinic rays, radiation, or heat 50, but is active by the inner surface 31b.
  • the structure is integrated by combining the adhesive layer 11 and the irradiation method, but the adhesion on the outer surface 31a is the adhesion on the inner surface 31b. Since the adhesive layer 31 is formed so as to be lower than the property, it is not necessary to provide a separate layer such as a separation layer. As described above, the adhesive layer 31 can be easily formed.
  • each of the adhesiveness on the outer surface 31a and the adhesiveness on the inner surface 31b can be accurately controlled by selecting a material constituting the adhesive layer 11 and adjusting an irradiation amount of active light, radiation, or heat. Is.
  • the adhesiveness of the adhesive layer 31 to each of the substrate 12 and the silicon substrate 61 can be temporarily and easily supported by the silicon substrate 61 of the device wafer 60 without damaging the thin device wafer 60 ′.
  • the adhesiveness to such an extent that temporary support of the thin device wafer 60 'with respect to the silicon substrate can be easily released can be controlled with high accuracy and easily.
  • the form using the adhesive support 120 can also temporarily support the silicon substrate 61 more reliably and easily when the above-described processing is performed on the silicon substrate 61 of the device wafer 60, and damage the thin device wafer 60 ′. It is preferable that the temporary support to the thin device wafer 60 ′ can be released more easily without giving
  • the method for manufacturing a semiconductor device of the present invention is not limited to the above-described embodiment, and appropriate modifications and improvements can be made.
  • the adhesive layer formed from the temporary adhesive for manufacturing a semiconductor device according to the present invention is provided on the carrier substrate before the device wafer is temporarily bonded, thereby constituting an adhesive support.
  • the substrate to be processed may first be provided on a member to be processed such as a device wafer, and then the substrate to be processed provided with an adhesive layer may be temporarily bonded.
  • a mask used for pattern exposure may be a binary mask or a halftone mask.
  • the exposure is mask exposure through a mask, but may be selective exposure by drawing using an electron beam or the like.
  • the adhesive layer has a single layer structure, but the adhesive layer may have a multilayer structure.
  • a method for forming an adhesive layer having a multilayer structure before irradiating with actinic rays or radiation, a method of applying the adhesive composition stepwise by the above-mentioned conventionally known method or irradiating with actinic rays or radiation. Later, the method of apply
  • the adhesive layer 11 is an adhesive layer whose adhesiveness is reduced by irradiation with active light, radiation, or heat, irradiation with active light, radiation, or heat Therefore, the adhesiveness of the adhesive layer as a whole can be reduced by reducing the adhesiveness between the respective layers.
  • the silicon substrate is exemplified as the member to be processed supported by the adhesive support.
  • the present invention is not limited to this, and in the semiconductor device manufacturing method, mechanical or chemical Any member to be processed that can be subjected to various processing may be used.
  • the member to be processed can include a compound semiconductor substrate.
  • the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate. Can be mentioned.
  • the silicon substrate thinning process and the through silicon via formation process are given as the mechanical or chemical treatment for the silicon substrate supported by the adhesive support.
  • the present invention is not limited to these, and any processing necessary in the method for manufacturing a semiconductor device can be used.
  • the light transmission region and the light shielding region in the mask, the high adhesion region and the low adhesion region in the adhesive layer, and the shape, size, number, arrangement location, etc. of the device chip in the device wafer, etc. Is arbitrary as long as the present invention can be achieved, and is not limited.
  • the present invention also relates to a kit comprising the protective layer compound and the above-described temporary adhesive for manufacturing a semiconductor device of the present invention. Moreover, this invention relates also to the kit provided with the compound for protective layers, stripping solution, and the above-mentioned temporary adhesive for semiconductor device manufacture of this invention. Specific examples and preferred examples of the protective layer compound and the stripping solution are as described above.
  • Polymer compound (1) Ethylene MS200NT (styrene-methyl methacrylate copolymer manufactured by Nippon Steel Chemical Co., Ltd.)
  • Polymer compound (2) polymethyl methacrylate (manufactured by Aldrich, Mw: 12 million)
  • Photoradical polymerization initiator (1): IRGACURE OXE 02 (manufactured by BASF) Photoradical polymerization initiator (2): Kayacure DETX (manufactured by Nippon Kayaku) Thermal radical polymerization initiator (1): Perbutyl Z (manufactured by NOF Corporation, t-butyl peroxybenzoate, decomposition temperature (10-hour half-life temperature 104 ° C.))
  • a 4 inch Si wafer was used as it was as a member to be processed without a protective layer.
  • a 20 wt% p-menthane solution of the following protective layer compound was applied to a 4-inch Si wafer by a spin coater (Opticaat MS-A100, manufactured by Mikasa, 1200 rpm, 30 seconds), By baking at 100 ° C. for 300 seconds, a wafer provided with a protective layer having a thickness of 20 ⁇ m was formed.
  • the wafer as a member to be processed is collectively referred to as a wafer 2 with or without a protective layer.
  • Compound for protective layer Compound for protective layer (1): TOPAS5013 (manufactured by Polyplastics)
  • a UV exposure device (LC8 manufactured by Hamamatsu Photonics Co., Ltd.) is applied to the central portion of the adhesive layer excluding the periphery 3 mm from the adhesive layer side of the wafer 1 through a mask that protects (shields) the periphery 5 mm of the adhesive layer. ), was exposed to light having a wavelength of 254 nm with an exposure amount of 2000 mJ / cm 2 .
  • Wafer 2 was stacked on the adhesive layer of wafer 1 and pressure bonded at 200 ° C. and 20 N / cm 2 for 300 seconds.
  • the wafer 2 is a 4-inch Si wafer provided with a protective layer, the protective layer and the adhesive layer of the wafer 1 were overlapped and pressure-bonded as described above.
  • test piece prepared under the conditions described in Table 2 was immersed in the stripping solution described in Table 2 at 25 ° C. for 10 minutes. The test piece was taken out from the stripping solution, carefully washed with pure water, and then dried at 25 ° C. If the test specimen is pulled in the vertical direction of the adhesive layer and the Si wafer can be peeled off with very light force without damage, “A”, and if the Si wafer can be peeled off with light force without damage, “B”, Si If the wafer was able to be peeled off with a strong force without being damaged, “C” was given. In addition, the presence or absence of the damage of Si wafer was confirmed visually.
  • test piece prepared under the conditions shown in Table 2 was heated at 250 ° C. for 30 minutes, cooled to room temperature, and then immersed in the stripping solution shown in Table 2 at 25 ° C. for 10 minutes.
  • the test piece was taken out from the stripping solution, carefully washed with pure water, and then dried at 25 ° C. If the test specimen is pulled in the vertical direction of the adhesive layer and the Si wafer can be peeled off with very light force without damage, “A”, and if the Si wafer can be peeled off with light force without damage, “B”, Si If the wafer was able to be peeled off with a strong force without being damaged, “C” was given. In addition, the presence or absence of the damage of Si wafer was confirmed visually.
  • Comparative Examples 1 and 2 using a temporary adhesive not containing a polymerizable monomer or oligomer (A) having a fluorine atom or a silicon atom, and a temporary adhesive not containing a radical polymerization initiator were used.
  • Comparative Example 3 it was found that the peelability was lowered by going through a process at a high temperature.
  • Comparative Example 4 not containing the polymer compound (B) the monomer spread in the form of spots on the surface of the wafer after the wafer was applied, and evaluation was not possible.
  • Example 17 using the temporary adhesive agent containing a photoradical polymerization initiator and a thermal radical polymerization initiator as a radical polymerization initiator (C) is excellent in adhesive force.
  • the temporary adhesive of the present invention does not damage the processed member even after undergoing a high temperature process when performing a mechanical or chemical treatment on the member to be processed (such as a semiconductor wafer), The temporary support for the treated member can be easily released.
  • the adhesive layer formed through the exposure process had no adhesiveness in the region irradiated with light.
  • an adhesive support that can be adhered to only the peripheral portion of the adhesive layer can be formed on the member to be processed. Therefore, in particular, when the member to be processed is a device wafer, from the device wafer When removing the adhesive support, internal damage of the device can be further reduced.
  • Adhesive layer 12 Carrier substrate 21A, 31A Low adhesion region 21B, 31B High adhesion region 40 Mask 41 Light transmission region 42 Light shielding region 50 Actinic ray or radiation 50' Actinic ray or radiation or heat 60 Device wafer 60 ′ Thin device wafer 61, 61 ′ Silicon substrate 62 Device chip 63 Bump 70 Tape 80 Protective layer 100, 100 ′, 110, 120 Adhesive support 160 Device wafer with protective layer 160 ′ Thin device wafer with protective layer
  • the present invention it is excellent in applicability and can temporarily support the member to be processed with high adhesive force when performing mechanical or chemical treatment on the member to be processed, and at a high temperature in the method of manufacturing a semiconductor device.
  • a temporary adhesive for manufacturing a semiconductor device capable of easily releasing temporary support for a processed member even after undergoing a process at a high temperature without damaging the processed member even after undergoing the process, and The adhesive support used and the method for manufacturing the semiconductor device can be provided.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2013/084442 2012-12-27 2013-12-24 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法 Ceased WO2014103996A1 (ja)

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KR1020157016999A KR101793583B1 (ko) 2012-12-27 2013-12-24 반도체 장치 제조용 가접착제, 그것을 사용한 접착성 지지체, 및 반도체 장치의 제조방법
US14/743,619 US20150284603A1 (en) 2012-12-27 2015-06-18 Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same
US14/953,697 US20160075922A1 (en) 2012-12-27 2015-11-30 Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same

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JP2012-286366 2012-12-27
JP2012286366A JP6170672B2 (ja) 2012-12-27 2012-12-27 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法

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US20160075922A1 (en) 2016-03-17
KR101793583B1 (ko) 2017-11-03
KR20150090186A (ko) 2015-08-05
JP6170672B2 (ja) 2017-07-26
US20150284603A1 (en) 2015-10-08
JP2014130853A (ja) 2014-07-10
TWI643925B (zh) 2018-12-11

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