WO2014083746A1 - Dispositif optique et procédé de fabrication du dispositif optique - Google Patents
Dispositif optique et procédé de fabrication du dispositif optique Download PDFInfo
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- WO2014083746A1 WO2014083746A1 PCT/JP2013/006012 JP2013006012W WO2014083746A1 WO 2014083746 A1 WO2014083746 A1 WO 2014083746A1 JP 2013006012 W JP2013006012 W JP 2013006012W WO 2014083746 A1 WO2014083746 A1 WO 2014083746A1
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- Prior art keywords
- electrode
- optical
- resin
- optical device
- optical element
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- 230000003287 optical effect Effects 0.000 title claims abstract description 232
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229920005989 resin Polymers 0.000 claims abstract description 84
- 239000011347 resin Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 43
- 238000005304 joining Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 28
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Definitions
- the present disclosure relates to an optical device mounted on a digital device or the like and a manufacturing method thereof.
- Patent Document 1 discloses a board module in which an electronic component is mounted on a board having a through electrode.
- the board module includes a board, an electronic component provided on the first surface of the board or inside the board, and a connection provided on the first surface of the board while being electrically connected to the electronic component.
- An electrode a first through-hole portion penetrating in the thickness direction of the substrate so as to reach the back surface of the connection electrode, and the substrate provided from the inside of the first through-hole portion while being provided inside the first through-hole portion
- a through electrode provided on the second surface of the substrate, a wiring electrode provided on the second surface of the substrate and electrically connected to the through electrode on the second surface of the substrate, and a wiring And an insulating layer provided on the second surface of the substrate so as to cover the surface of the electrode.
- Patent Document 2 discloses a wafer level image sensor module.
- the image sensor module includes an optical filter that removes a specific wavelength from light flowing into the image sensor, a glass layer that is attached to the optical filter to protect the filter coating layer, and a pad electrode is formed on the rear surface thereof.
- An image sensor attached to the pad electrode of the glass layer and having a redistribution pad formed on the rear surface thereof from the pad electrode, and a solder ball disposed on the rear surface side of the image sensor and electrically connected to the pad electrode.
- the image sensor is sealed with an insulating sealing resin.
- the insulating sealing resin protects only one side of the joint at the joint between the electrode of the image sensor and the pad of the glass layer. This causes a problem of poor connection. Further, when the resin enters the light receiving part side of the image sensor from the gap of the joint part, the inflow of light is hindered.
- the optical device according to the present disclosure is effective for reinforcing the connection portion while preventing the resin from entering the optical region.
- An optical device includes an optical element having an optical region and a first electrode disposed on an outer periphery of the optical region on a main surface, and a first surface disposed to face the main surface of the optical element.
- a transparent member having a second electrode, a bonding member disposed between the optical element and the transparent member, and electrically connecting the first electrode and the second electrode; an optical element and the transparent member; And a resin that covers the optical element and the bonding member, and the resin is bonded to the first resin portion that seals the side surface of the optical element.
- the present disclosure it is effective to obtain a highly reliable optical device in which the connection between the transparent member and the optical element is reinforced while preventing the resin from entering the optical region.
- FIG. 1A is a diagram illustrating the configuration of the optical device according to the first embodiment, and is a cross-sectional view taken along line Ia-Ia illustrated in FIG. 1B.
- FIG. 1B is a plan view showing the configuration of the optical device according to the first embodiment.
- FIG. 2A is a cross-sectional view illustrating an example of a method for manufacturing the optical device according to the first embodiment.
- FIG. 2B is a cross-sectional view illustrating an example of the method for manufacturing the optical device according to the first embodiment.
- FIG. 2C is a cross-sectional view showing an example of a method for manufacturing the optical device according to the first embodiment.
- FIG. 2D is a cross-sectional view illustrating an example of the method for manufacturing the optical device according to the first embodiment.
- FIG. 3A is a cross-sectional view illustrating an example of a method for manufacturing the optical device according to the first embodiment.
- FIG. 3B is a cross-sectional view illustrating an example of the method for manufacturing the optical device according to the first embodiment.
- FIG. 3C is a cross-sectional view illustrating an example of the method for manufacturing the optical device according to the first embodiment.
- FIG. 4A is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 4B is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 4C is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 4A is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 4B is a cross-sectional view showing a part of
- FIG. 4D is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 4E is a cross-sectional view showing a part of Modification 1 of the configuration of the optical device according to the first embodiment.
- FIG. 5A is a cross-sectional view for comparison between the optical device according to the first embodiment and Modification 1 thereof.
- FIG. 5B is a cross-sectional view for comparison between the optical device according to the first embodiment and Modification 1 thereof.
- FIG. 6 is a cross-sectional view illustrating a part of a second modification of the configuration of the optical device according to the first embodiment.
- FIG. 7 is a plan view showing Modification Example 3 of the configuration of the optical device according to the first embodiment.
- optical device of the present disclosure and the manufacturing method thereof will be described with reference to the drawings.
- detailed description may be omitted.
- detailed descriptions of already well-known matters and repeated descriptions for substantially the same configuration may be omitted. This is to avoid the following description from becoming unnecessarily redundant and to facilitate understanding by those skilled in the art.
- (First embodiment) 1A and 1B are a cross-sectional view and a plan view schematically showing the optical device according to the present embodiment.
- 1A includes an optical element 1, a transparent member 2 disposed so as to cover the optical element 1, and a sealing resin 3 for sealing the optical element 1.
- the optical element 1 includes an optical region 5 that photoelectrically converts incident light on the main surface 4, and includes a first electrode 6 in a region different from the optical region 5 on the main surface 4.
- the first electrode 6 is a conductive terminal that outputs an electrical signal obtained by photoelectrically converting incident light to the outside of the optical element 1, and is formed of a metal such as aluminum or copper as a main material. .
- the transparent member 2 is made of a translucent material such as glass or synthetic resin, and is disposed so as to cover the optical region 5 of the optical element 1. Light outside the optical device 100 is incident from the first surface 7 of the transparent member 2, passes through the transparent member 2, and is received by the optical region 5 of the optical element 1.
- the second surface 8 of the transparent member 2 is electrically connected to the second electrode 9, the first wiring 10 that is continuous with the second electrode 9, and the second electrode 9 through the first wiring 10. And a third electrode 11 connected thereto.
- the second electrode 9 of the transparent member 2 and the first electrode 6 of the optical element 1 are connected by a bonding member 12.
- An electrical signal obtained by photoelectric conversion in the optical region 5 is transmitted from the first electrode 6 of the optical element 1 to the second electrode 9 of the transparent member via the bonding member 12 and further to the second electrode 9 by the first wiring 10. It is transmitted to the third electrode 11 routed outside the second electrode 9.
- the bonding member 12 any one of a bump, a conductive sheet, a conductive adhesive, or a composite of them is used.
- the sealing resin 3 includes a through electrode 13 that seals a part of the second surface 8 of the transparent member 2 and the optical element 1 and is electrically connected to the third electrode 11 of the transparent member 2.
- the through electrode 13 penetrates the sealing resin 3 in the thickness direction, and is connected to the second wiring 14 on the side opposite to the third electrode 11.
- the second wiring 14 is covered with an insulating layer 15 such as solder resist or polyimide, and is insulated and protected except for a portion that conducts with the fourth electrode 16.
- An external electrode terminal 17 is connected to the fourth electrode 16, and electrical connection with the outside of the optical device 100 is performed by the external electrode terminal 17.
- the through electrode 13 is formed by covering or filling a through hole formed in the sealing resin 3 with a conductive material such as copper or solder.
- a conductive material such as copper or solder.
- the sealing resin 3 is also filled in the outer periphery of the bonding member 12, that is, the bonding portion between the optical element 1 and the transparent member 2 is protected from both the optical region 5 side and the through electrode 13 side. Therefore, the electrical reliability of the joint is improved, and an electrical signal can be transmitted from the optical element 1 to the outside with high reliability.
- a step 18 is disposed between the optical element 1 and the transparent member 2 on the optical region 5 side of the bonding member 12. Since the stepped portion 18 serves as a dam and prevents the resin from entering the optical region 5, the sealing resin 3 does not exist inside the stepped portion 18 and does not reach the optical region 5. Therefore, it is possible to prevent problems caused by the resin entering the optical region 5. Further, since the resin does not enter inside the step portion 18 on the second surface 8 of the transparent member 2, it is possible to prevent the incident light to the optical region 5 from being blocked by the resin.
- the stepped portion 18 is desirably formed continuously on the outer periphery of the optical region 5 as shown in FIG. 1B, but may be intermittent as long as the purpose of preventing the infiltration of the resin can be achieved.
- the interval when intermittently arranged is determined by the viscosity of the resin, the distance between the optical region 5 and the bonding member 12, and the like. Further, even when the tip of the step portion 18 is not in contact with the first surface 8 of the transparent member 2, the step portion 18 functions as a dam, and the optical region 5 or incident light received by the optical region 5 is received. The effect of preventing the sealing resin 3 from entering the path is limited.
- the step portion 18 is formed of the same material as the bonding member 12, but the present invention is not limited to this, and the step portion 18 may be formed of another conductive material or a non-conductive material such as a resin. . Further, an antireflection film (not shown) may be provided on the surface of the stepped portion 18, particularly on the side close to the optical region 5. Thereby, irregular reflection of incident light is prevented, and efficient condensing on the optical region 5 becomes possible.
- the connection portion can be reinforced while preventing the resin from entering the optical region 5. Further, it is possible to prevent the incident light to the optical region 5 from being blocked by the resin on the second surface 8 of the transparent member 2. That is, the reliability as the optical device 100 can be improved.
- 2A to 3C are cross-sectional views schematically showing an example of a method for manufacturing the optical device according to the present embodiment.
- a second electrode 9 and a third electrode 11 are formed on the second surface 8 of the transparent member 2. More specifically, although not shown in the figure, a seed metal is formed on the second surface 8 of the transparent member 2 by sputtering using, for example, a PVD (Physical Vapor Deposition) method.
- the seed metal material can be selected from TiW, Al, Cu, Ni, and the like.
- patterning is performed by etching, and a main metal is formed thereon by plating to form the second electrode 9, the first wiring 10, and the third electrode 11.
- Au is formed on Ni, and PVD sputtering is used, or in the case of mass production, electrolytic plating is used.
- a step 18 is formed on the second surface 8 of the transparent member 2, and a bonding member 12 is formed on the second electrode 9, respectively.
- the step portion 18 and the joining member 12 are preferably made of the same material and in the same process. For example, a structure in which solder is plated on Cu or Ni, or a stud bump of Au is applied.
- the height of the bonding member 12 may be made higher than the stepped portion 18 by covering the stepped portion 18 with a film such as a resist (not shown).
- the optical element 1 is connected to the transparent member 2 by a flip chip bonding method.
- the bonding member 12 provided on the transparent member 2 side and the first electrode 6 of the optical element 1 are connected, and the optical region 5 and the second surface 8 of the transparent member face each other.
- an underfill (not shown) may be filled around the joint. In that case, an optimum material can be selected for each of the protection of the joint and the protection of the chip. For the optical element 1, if only non-defective products are selected and bonded, the production cost can be reduced.
- a sealing resin 3 that protects the outer periphery of the optical element 1 and the joint between the optical element 1 and the transparent member 2 is formed.
- a resin filling method an appropriate method can be selected depending on the viscosity and wettability of the resin, such as a compression mold method, a transfer mold method, and a method in which a resin is applied in a dotted manner and is spread and filled by capillary action.
- the surface opposite to the optical region 5 of the optical element 1 is also covered with the sealing resin 3.
- the optical element 1 is back-ground and the sealing resin 3 is used. You may expose from.
- a through electrode 13 is formed in the sealing resin 3.
- a cavity for forming a through electrode is formed in the sealing resin 3, and then a conductive layer is formed on the inner wall of the cavity by plating or the like, or the cavity is filled with a conductor to function as an electrode.
- etching the cavity such as formation by laser, formation by RIE (Reactive Ion Etching), and exposure using a mask using a photosensitive resin.
- the wiring 14 is formed on the surface of the sealing resin 3 opposite to the surface facing the transparent member 2 so as to be connected to one end of the through electrode 13 exposed from the sealing resin 3.
- the fourth electrode 16 is formed continuously with the wiring 14.
- an insulating layer 15 that covers the wiring 14 and the fourth electrode 16 is formed.
- An opening 19 is formed in the insulating layer 15 so as to expose a part of the fourth electrode 16 that becomes an electrical conduction portion with the outside.
- an external electrode terminal 17 for electrical connection with the outside of the optical device 100 is formed on the fourth electrode 16 and separated into individual pieces by dicing.
- Individual optical devices 100 as shown in FIG. Dicing may be performed from either direction A or B, or from both directions.
- the end portions of the transparent member 2 and the sealing resin 3 are formed flush with each other. “Flush” means a substantial flush and includes some manufacturing errors.
- the external electrode terminal 17 is generally formed of a solder ball, but may have a ball shape as shown in FIG. 3C with a composition other than solder, or a pillar-shaped conductor other than the ball shape. I do not care.
- the external electrode terminal 17 is not provided on the optical device 100 side, and a sheet-like adhesive or conductive adhesive is provided on a substrate (not shown) on which the optical device 100 is mounted, so that the fourth electrode 16 is electrically connected. It can also be connected. In that case, after carrying out to the process of FIG. 3B, singulation is performed and the optical device 100 is obtained.
- the bonding member 12 is formed on the electrode 9 of the transparent member 2 as shown in FIG. 2B, but may instead be formed on the electrode 6 of the optical element 1. In that case, the bonding member 12 formed on the electrode 6 of the optical element 1 is bonded to the electrode 9 of the transparent member 2 to perform flip chip bonding.
- the stepped portion 18 disposed between the optical region 5 and the first electrode 6 is formed in a convex shape on the second surface 8 of the transparent member 2.
- This configuration has the advantage that the step 18 can be formed in the same process as the electrode formation on the transparent member 2, and the process is simple and easy to manufacture.
- the stepped portion 18 is a technical effect in which priority is given to functioning as a dam so that the sealing resin 3 does not enter the optical region 5, and other shapes may be adopted as long as this effect is obtained.
- 4A to 4E are cross-sectional views schematically showing modified examples of the step portion 18 of the optical device 100 according to the present embodiment.
- a convex step 18a is disposed on the optical element 1a side.
- the transparent member 2 is made of glass, synthetic resin, or the like, it is more resistant to damage at the time of bonding than the main surface 4 side of the optical element 1 having a fragile configuration such as a circuit element that is easily broken. Therefore, in the configuration of FIG. 4A, damage to the optical element can be reduced compared to the configuration in which the tip of the stepped portion 18 formed in the transparent member 2 is in contact with the optical element 1 as shown in FIG. 1A.
- convex step portions 18b and 18c are arranged on the optical element 1c side and the transparent member 2b side.
- the bonding gap between the optical element and the transparent member can be easily closed as compared with the configuration in which the step portion is disposed only in one of the optical element 1 and the transparent member 2.
- the tip of the stepped portion 18b does not contact the main surface 4 of the optical element 1c, damage to the optical element can be reduced as compared with the structure of FIG. 1A.
- the bonding member 12 may be formed on the optical element 1a or 1c side in the same process as the stepped portion 18a or 18c.
- the stepped portion is mounted as a concave shape instead of a convex shape.
- a concave step portion 18d in which a part of the second surface 8 of the transparent member 2d is recessed is provided.
- the sealing resin 3 that has entered inside the bonding member 12 falls into the stepped portion 18d, so that the stepped portion 18d serves as a dam and prevents light incident on the optical region 5 from being blocked by the resin. it can. Further, since excess sealing resin 3 flows toward the stepped portion 18d, an effect of preventing the sealing resin 3 from entering the optical region 5 is produced even on the optical element 1 side where the stepped portion 18d is not provided.
- a concave-shaped stepped portion 18e in which a part of the main surface 4 of the optical element 1e is recessed is provided.
- the sealing resin 3 even if the sealing resin 3 enters the main surface 4 to the inside of the bonding member 12, it falls into the stepped portion 18 e before the optical region 5. Therefore, it is possible to more reliably prevent the sealing resin 3 from entering the optical region 5 as compared with the configuration of FIG. 4C. Further, since excess sealing resin 3 flows toward the stepped portion 18e, the flow of the sealing resin 3 is relaxed even on the transparent member 2 side where the stepped portion 18e is not provided, and incident light to the optical region 5 is resinated. It can also be prevented from being blocked by.
- concave step portions 18e and 18f are provided on both the main surface 4 of the optical element 1d and the second surface 8 of the transparent member 2f.
- This configuration includes a dam structure that prevents the sealing resin 3 from entering on both the optical element 1 side and the transparent member 2 side, and has both the structures disclosed in FIGS. 4C and 4D. Therefore, intrusion of the sealing resin 3 can be more reliably prevented as compared with FIGS. 4C and 4D.
- the mode of the stepped portion 18 is not limited to that shown in FIGS. 4A to 4E, but may be a convex shape with a root diameter smaller than the tip diameter, or a concave shape with a larger bottom diameter. Also, there are combinations of a convex stepped portion and a concave stepped portion. As an example, a convex stepped portion 18 is provided on the transparent member 2 side, a concave stepped portion 18d is provided on the optical element 1 side, and a stepped portion 18d is disposed on the optical region 5 side of the stepped portion 18 in the sectional view. There is a configuration to do.
- the stepped portion 18 d in front of the optical region 5 can be stopped.
- the location where the step portion is arranged is determined as appropriate depending on the material of the sealing resin 3 and the filling method.
- the convex stepped portion is disclosed as a stepped portion 18a that widens toward the optical element 1 as shown in FIG. 5A and a stepped portion 18 that spreads out toward the transparent member 2 as shown in FIG. 5B.
- the opening area on the second surface 8 of the transparent member 2 becomes wider when the optical element 1 side is provided with a stepped portion that widens toward the end. That is, the incident angle ⁇ to the optical region 5 is widened, the light L transmitted through the transparent member 2 can be received more efficiently, and the performance of the optical device 100 is improved.
- the stepped portion 18a whose optical element 1 side is widened is formed by, for example, the difference in the amount of light entering between the upper side and the lower side of the resist when exposing only the portion where the resist is applied and plating is grown.
- the stepped portion 18 is desirably formed in the step of forming the bonding member 12, and the composition is the same conductor as the bonding member 12. Therefore, damage due to the tip of the stepped portion 18 coming into contact with the main surface 4 side of the optical element 1 having a fragile configuration that is easily destroyed, such as a circuit element, was assumed.
- FIG. 6 is a cross-sectional view schematically showing a modification of the step portion 18 of the optical device 100 according to the present embodiment.
- the stepped portion 18g provided on the transparent member 2 includes a metal material 20 and an insulating material 21 that covers the metal material 20.
- the material of the metal material 20 is selected from, for example, copper and gold
- the insulating material 21 is a material such as solder resist or polyimide.
- the insulating material 21 covers the upper surface and side surfaces of the metal material 20.
- the present invention is not limited to this. If only the upper portion of the metal material 20 is covered with the insulating material 21, damage at the time of bonding is achieved. The effect of reducing is obtained.
- the arrangement pitch of the second electrodes 9 is larger than the arrangement pitch of the third electrodes 11 as shown in FIG. 1B.
- the accuracy required when performing processing for establishing electrical continuity with the third electrode 11 such as the through electrode 13 connected to the third electrode is relaxed, and a simpler apparatus and process can be used. Can be manufactured. There are other designs that can alleviate this machining accuracy.
- FIG. 7 is a plan view schematically showing a modification of the third electrode 11 of the optical device 100 according to the present embodiment.
- the area of the third electrode 11 b is larger than the area of the second electrode 9.
- the first surface 7 of the transparent member 2 is a light incident surface from the outside of the optical device 100.
- an optical filter (not shown) that selectively removes a specific wavelength of light is further laminated on the transparent member 2 to form a camera module.
- the optical filter can be formed by separating the optical device 100 into individual pieces and then individually pasting on the transparent member 2, but before making the optical device 100 into individual pieces, the optical filter is laminated on the transparent member 2, If batch cutting is performed in a state of being bonded to the optical device 100, manufacturing can be performed with a simpler process. In addition, the height of the camera module can be reduced.
- the second electrode 9 formed on the second surface 8 of the transparent member 2 is the same as the first wiring 10, the third electrode 11, and the sealing formed on the second surface 8. It was connected to the fourth electrode 16 through the through electrode 13 penetrating the stop resin 3 in the thickness direction and the second wiring 14.
- the external connection terminal is electrically connected from the second electrode 9 without using the third electrode 11 and the through electrode 13.
- the first wiring 10 connected to the second electrode 9 is formed up to the side end of the transparent member 2, and the second wiring 14 connected to the fourth electrode 16 is also used as the sealing resin 3. It forms to the side edge part.
- a conductor for connecting the first wiring 10 and the second wiring 14 is formed on the side end face of the sealing resin 3. In this configuration, the width of the optical device can be reduced as compared with the configuration in which the third electrode 11 and the through electrode 13 are provided outside the optical element 1, and the size of the camera module can be reduced.
- the through electrode 13 is disposed inside the sealing resin 3.
- the through electrode 13 is exposed from the side end surface of the sealing resin 3.
- the third electrode 11 and the through electrode 13 are cut in the thickness direction to obtain a cross section of the through electrode 13.
- the width of the optical device can be reduced as compared with the configuration in which the through electrode 13 is disposed inside the sealing resin, and the camera module can be downsized.
- the through electrode exposed from the side surface of the optical device can be used as an external connection electrode of the optical device, and the degree of freedom in mounting can be increased. In that case, since the second wiring 14, the fourth electrode 16, and the external electrode terminal 17 are not formed on the back surface of the sealing resin 3, the height of the optical device and the camera module can be reduced.
- the optical region 5 has been described as a light receiving region that receives incident light and performs photoelectric conversion.
- the optical element 1 having the light receiving region is mainly assumed to be a CCD image sensor chip or a CMOS image sensor chip, but may be another imaging element or sensor.
- the optical region 5 may be a light emitting region that emits light upon receiving a signal from the outside of the optical element 1 or the optical device 100. If it is the optical element 1 which has a light emission area
- the first embodiment and its modifications have been described as examples of the technology disclosed in the present application.
- the technology in the present disclosure is not limited to this, and can also be applied to an embodiment in which changes, replacements, additions, omissions, and the like are appropriately performed.
- This disclosure is applicable to optical devices such as image sensors. Since a function when a TSV (Through Silicon Via) is formed on the optical element can be obtained without a special design of the optical element, the optical element is suitable for an apparatus that wants to reduce chip design costs and manufacturing costs.
- TSV Thin Silicon Via
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
La présente invention concerne l'obtention d'un dispositif optique dans lequel les parties connectées d'un élément transparent et d'un élément optique sont renforcées, tout en empêchant la résine de s'infiltrer dans la zone optique. Le dispositif optique est muni : d'un élément optique qui possède, sur une surface principale, une zone optique et une première électrode disposée sur le périmètre extérieur de la zone optique ; d'un élément transparent ayant une seconde électrode sur une première surface agencée pour être tournée vers une surface principale de l'élément optique ; d'un élément de jonction placé entre l'élément optique et l'élément transparent, afin de relier électriquement la première électrode et la seconde électrode ; d'une partie en forme de marche placée entre l'élément optique et l'élément transparent, et plus proche de la zone optique depuis l'élément de liaison ; et d'une résine qui recouvre l'élément optique et l'élément de jonction. La résine comprend une première partie de résine destinée à fermer les surfaces latérales de l'élément optique, et une seconde partie de résine destinée à recouvrir l'élément de jonction des deux côtés de la partie en forme de marche, et les parties de bord latérales de l'élément optique, tout en évitant la zone optique.
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JP2012260663A JP2016027586A (ja) | 2012-11-29 | 2012-11-29 | 光学装置および光学装置の製造方法 |
JP2012-260663 | 2012-11-29 |
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WO2014083746A1 true WO2014083746A1 (fr) | 2014-06-05 |
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PCT/JP2013/006012 WO2014083746A1 (fr) | 2012-11-29 | 2013-10-09 | Dispositif optique et procédé de fabrication du dispositif optique |
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WO (1) | WO2014083746A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017126376A1 (fr) * | 2016-01-22 | 2017-07-27 | ソニー株式会社 | Capteur d'image, procédé de fabrication et dispositif électronique |
US10714402B2 (en) | 2016-06-20 | 2020-07-14 | Sony Corporation | Semiconductor chip package for improving freedom of arrangement of external terminals |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11316071B2 (en) | 2019-02-08 | 2022-04-26 | Asahi Kasei Microdevices Corporation | Optical device and method for manufacturing optical device |
WO2023162713A1 (fr) * | 2022-02-22 | 2023-08-31 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif à semi-conducteurs, appareil électronique et procédé de fabrication de dispositif à semi-conducteurs |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204442A (ja) * | 1993-01-07 | 1994-07-22 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JPH11121653A (ja) * | 1997-07-31 | 1999-04-30 | Fuji Film Microdevices Co Ltd | 半導体装置とその製造方法 |
JP2000228573A (ja) * | 1999-02-05 | 2000-08-15 | Canon Inc | モジュールの基板構造 |
JP2002231916A (ja) * | 2001-02-02 | 2002-08-16 | Sharp Corp | 撮像装置及びその製造方法 |
JP2004235547A (ja) * | 2003-01-31 | 2004-08-19 | Kyocera Corp | カメラモジュールおよび該カメラモジュール製造方法 |
JP2005217890A (ja) * | 2004-01-30 | 2005-08-11 | Konica Minolta Opto Inc | 撮像装置、撮像装置の製造方法、撮像素子、撮像素子の取付用基板及び電子機器 |
JP2006041277A (ja) * | 2004-07-28 | 2006-02-09 | Fuji Photo Film Co Ltd | 固体撮像装置及び固体撮像装置の製造方法 |
JP2006128625A (ja) * | 2004-09-30 | 2006-05-18 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2006216935A (ja) * | 2005-02-01 | 2006-08-17 | Samsung Electro-Mechanics Co Ltd | ウェーハレベルのイメージセンサーモジュール及びその製造方法 |
WO2008032404A1 (fr) * | 2006-09-15 | 2008-03-20 | Fujitsu Microelectronics Limited | Dispositif à semi-conducteur et son procédé de fabrication |
JP2009182208A (ja) * | 2008-01-31 | 2009-08-13 | Kyushu Institute Of Technology | 半導体チップパッケージ及びその製造方法 |
JP2011243612A (ja) * | 2010-05-14 | 2011-12-01 | Sony Corp | 半導体装置及びその製造方法並びに電子機器 |
-
2012
- 2012-11-29 JP JP2012260663A patent/JP2016027586A/ja active Pending
-
2013
- 2013-10-09 WO PCT/JP2013/006012 patent/WO2014083746A1/fr active Application Filing
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204442A (ja) * | 1993-01-07 | 1994-07-22 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JPH11121653A (ja) * | 1997-07-31 | 1999-04-30 | Fuji Film Microdevices Co Ltd | 半導体装置とその製造方法 |
JP2000228573A (ja) * | 1999-02-05 | 2000-08-15 | Canon Inc | モジュールの基板構造 |
JP2002231916A (ja) * | 2001-02-02 | 2002-08-16 | Sharp Corp | 撮像装置及びその製造方法 |
JP2004235547A (ja) * | 2003-01-31 | 2004-08-19 | Kyocera Corp | カメラモジュールおよび該カメラモジュール製造方法 |
JP2005217890A (ja) * | 2004-01-30 | 2005-08-11 | Konica Minolta Opto Inc | 撮像装置、撮像装置の製造方法、撮像素子、撮像素子の取付用基板及び電子機器 |
JP2006041277A (ja) * | 2004-07-28 | 2006-02-09 | Fuji Photo Film Co Ltd | 固体撮像装置及び固体撮像装置の製造方法 |
JP2006128625A (ja) * | 2004-09-30 | 2006-05-18 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2006216935A (ja) * | 2005-02-01 | 2006-08-17 | Samsung Electro-Mechanics Co Ltd | ウェーハレベルのイメージセンサーモジュール及びその製造方法 |
WO2008032404A1 (fr) * | 2006-09-15 | 2008-03-20 | Fujitsu Microelectronics Limited | Dispositif à semi-conducteur et son procédé de fabrication |
JP2009182208A (ja) * | 2008-01-31 | 2009-08-13 | Kyushu Institute Of Technology | 半導体チップパッケージ及びその製造方法 |
JP2011243612A (ja) * | 2010-05-14 | 2011-12-01 | Sony Corp | 半導体装置及びその製造方法並びに電子機器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017126376A1 (fr) * | 2016-01-22 | 2017-07-27 | ソニー株式会社 | Capteur d'image, procédé de fabrication et dispositif électronique |
US11329090B2 (en) | 2016-01-22 | 2022-05-10 | Sony Corporation | Image sensor, manufacturing method, and electronic device |
US10714402B2 (en) | 2016-06-20 | 2020-07-14 | Sony Corporation | Semiconductor chip package for improving freedom of arrangement of external terminals |
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JP2016027586A (ja) | 2016-02-18 |
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