WO2014073310A1 - 透明導電性フィルム - Google Patents

透明導電性フィルム Download PDF

Info

Publication number
WO2014073310A1
WO2014073310A1 PCT/JP2013/077374 JP2013077374W WO2014073310A1 WO 2014073310 A1 WO2014073310 A1 WO 2014073310A1 JP 2013077374 W JP2013077374 W JP 2013077374W WO 2014073310 A1 WO2014073310 A1 WO 2014073310A1
Authority
WO
WIPO (PCT)
Prior art keywords
tin oxide
indium tin
oxide layer
layer
transparent conductive
Prior art date
Application number
PCT/JP2013/077374
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
智剛 梨木
基希 拝師
野口　知功
石橋　邦昭
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157014098A priority Critical patent/KR20150080587A/ko
Priority to CN201380069624.2A priority patent/CN104903975A/zh
Priority to KR1020177011679A priority patent/KR20170052697A/ko
Publication of WO2014073310A1 publication Critical patent/WO2014073310A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Definitions

  • the present invention relates to a transparent conductive film applied to an input display device or the like capable of inputting information by contact with a finger or a stylus pen.
  • Patent Document 1 a transparent conductive film in which a transparent conductor layer made of a silver salt photosensitive material is formed on both surfaces of a single form base material.
  • a transparent conductive film having a transparent conductive layer on both sides is formed by laminating two transparent conductive films having a transparent conductive layer formed on one side of a film base material when producing a capacitive touch panel.
  • the transparent conductor layer is patterned, the positional deviation of the patterned transparent conductor layers on the front and back sides is small, that is, the relative positional accuracy is excellent.
  • the transparent conductor layer is formed on both sides of the film substrate even if there is no problem when the transparent conductor layer is formed only on one side of the film substrate.
  • the crystallinity of indium tin oxide becomes extremely poor, and there is a problem that a transparent conductive film having a small surface resistance value cannot be obtained.
  • the object of the present invention is a transparent conductive material that is excellent in crystallinity and can realize a small surface resistance value even when a transparent conductive layer composed of an indium tin oxide layer is formed on both surfaces of a film substrate. To provide a film.
  • a transparent conductive film of the present invention comprises a film substrate having a first surface and a second surface, and a first transparent conductive layer formed on the first surface side of the film substrate.
  • a transparent conductive film including a second transparent conductor layer formed on the second surface side of the film substrate, wherein the first transparent conductor layer is from the first surface side of the film substrate.
  • the first indium tin oxide layer, the second indium tin oxide layer, and the third indium tin oxide layer are laminated in this order, and the second transparent conductor layer is formed on the film substrate.
  • a fourth indium tin oxide layer, a fifth indium tin oxide layer, and a sixth indium tin oxide layer are laminated in this order, and the tin oxide of the second indium tin oxide layer Content is oxidation of the first indium tin oxide layer And the tin oxide content of the third indium tin oxide layer is greater than the tin oxide content of the fourth indium tin oxide layer, It is characterized by being larger than any of the tin oxide contents of the sixth indium tin oxide layer.
  • the tin oxide content of the second indium tin oxide layer is 6 wt% to 15 wt%, and the tin oxide content of the first indium tin oxide layer and the third indium tin oxide layer Are 1% to 5% by weight, respectively.
  • the tin oxide content of the fifth indium tin oxide layer is 6 to 15% by weight
  • the tin oxide content of the fourth indium tin oxide layer and the sixth indium tin oxide layer is The amount is 1% to 5% by weight, respectively.
  • the thickness of the second indium tin oxide layer is larger than any of the thicknesses of the first indium tin oxide layer and the third indium tin oxide layer.
  • the thickness of the second indium tin oxide layer is 5 nm to 20 nm, and the thicknesses of the first indium tin oxide layer and the third indium tin oxide layer are 1 nm to 10 nm, respectively. .
  • the thickness of the fifth indium tin oxide layer is preferably larger than any of the fourth indium tin oxide layer and the sixth indium tin oxide layer.
  • the thickness of the fifth indium tin oxide layer is 5 nm to 20 nm, and the thicknesses of the fourth indium tin oxide layer and the sixth indium tin oxide layer are 1 nm to 10 nm, respectively. .
  • both the first and second transparent conductor layers formed on both surfaces of the film substrate have a three-layer structure, and the tin oxide content of the second indium tin oxide layer in the first transparent conductor layer And the tin oxide content of the fifth indium tin oxide layer in the second transparent conductor layer is greater than the tin oxide content of the first and third indium tin oxide layers. Greater than any of the tin oxide contents of the sixth indium tin oxide layer. According to this configuration, even when a transparent conductive layer composed of an indium tin oxide layer is formed on both surfaces of a film substrate, a transparent conductive film having excellent crystallinity and a small surface resistance value is provided. Can do.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of a transparent conductive film according to the present embodiment.
  • the thickness of each layer in FIG. 1 shows the example, and the thickness of each layer in the film sensor of this invention shall not be restricted to the thing of FIG.
  • the transparent conductive film 1 of the present invention is formed on a film substrate 2 having a surface 2 a (first surface) and a surface 2 b (second surface), and on the surface 2 a side of the film substrate 2.
  • the transparent conductor layer 3 (first transparent conductor layer) thus formed and the transparent conductor layer 4 (second transparent conductor layer) formed on the surface 2b side of the film substrate 2 are included.
  • the transparent conductor layer 3 includes an indium tin oxide layer 5 (first indium tin oxide layer), an indium tin oxide layer 6 (second indium tin oxide layer), from the surface 2a side of the film substrate 2. Indium tin oxide layer 7 (third indium tin oxide layer) is laminated in this order. Further, the transparent conductor layer 4 includes an indium tin oxide layer 8 (fourth indium tin oxide layer) and an indium tin oxide layer 9 (fifth indium tin oxide layer) from the surface 2b side of the film substrate 2. ) And an indium tin oxide layer 10 (sixth indium tin oxide layer) are laminated in this order.
  • the tin oxide content of the indium tin oxide layer 6 is greater than both the tin oxide content of the indium tin oxide layer 5 and the tin oxide content of the indium tin oxide layer 7. Further, the tin oxide content of the indium tin oxide layer 9 is larger than both the tin oxide content of the indium tin oxide layer 8 and the tin oxide content of the indium tin oxide layer 10.
  • both of the transparent conductor layers 3 and 4 formed on the surfaces 2a and 2b of the film substrate 2 have a three-layer structure, and in each of the transparent conductor layers, indium tin having a large tin oxide content.
  • the oxide layer is sandwiched between two indium tin oxide layers having a relatively small tin oxide content.
  • the crystallinity of the entire transparent conductor layers 3 and 4 can be significantly improved.
  • each indium tin oxide layer can be easily converted from amorphous to crystalline under low-temperature and short-time heat treatment conditions, and as a result, the surface resistance value of the transparent conductive film is reduced. It becomes possible.
  • the film base material 2 in this invention is a sheet-like member which has flexibility, and has the surface 2a which is one main surface, and the surface 2b which is the other main surface.
  • a transparent conductor layer 3 is formed on the surface 2a, and a transparent conductor layer 4 is formed on the surface 2b.
  • the material for forming the film substrate is preferably a material excellent in transparency and heat resistance, such as polyethylene terephthalate, polycycloolefin, and polycarbonate.
  • the said film base material may have an easily bonding layer and a hard-coat layer on the surface.
  • the thickness of the film substrate is not particularly limited, and is, for example, 20 ⁇ m to 200 ⁇ m. Generally, in order to reduce the amount of volatile components inside the substrate and reduce the effect on the crystallization of the indium tin oxide layer, it is preferable that the thickness of the film substrate is small. Even if the thickness of the film substrate is large (for example, 80 ⁇ m to 200 ⁇ m), the indium tin oxide layer can be sufficiently crystallized.
  • the thickness of the indium tin oxide layer 6 is preferably larger than any of the thicknesses of the indium tin oxide layer 5 and the indium tin oxide layer 7 as shown in FIG.
  • the thickness of the indium tin oxide layer 6 is preferably 5 nm to 20 nm, and the thickness of the indium tin oxide layer 5 and the indium tin oxide layer 7 is preferably 1 nm to 10 nm, respectively.
  • the total thickness of the transparent conductor layer 3 (the total thickness of the indium tin oxide layers 5, 6, 7) is preferably 7 nm to 40 nm.
  • the indium tin oxide used in the present invention is a compound obtained by doping indium oxide (In 2 O 3 ) with tin oxide (SnO 2 ).
  • tin oxide is added to indium oxide, tin (4+) is substituted for part of the lattice of indium (3+), and electrons generated at that time serve as carriers contributing to electrical conduction.
  • the tin oxide content of the indium tin oxide layer 6 is preferably 6% by weight to 15% by weight, and more preferably 8% by weight to 12% by weight.
  • the tin oxide contents of the indium tin oxide layer 5 and the indium tin oxide layer 7 are preferably 1% by weight to 5% by weight, and more preferably 2% by weight to 4% by weight, respectively.
  • the tin oxide content is expressed by the formula: ⁇ (SnO 2 ) / (In 2 O 3 + SnO 2 ) ⁇ ⁇ 100, where the weight of tin oxide is (SnO 2 ) and indium oxide (In 2 O 3 ). It is a value obtained from
  • the surface resistance value after crystallization (after heat treatment) of the transparent conductor layer 3 is 200 ⁇ / ⁇ (unit: ohms per square) or less, preferably 100 ⁇ / ⁇ to 160 ⁇ / ⁇ .
  • Second transparent conductor layer The transparent conductor layer 4 as the second transparent conductor layer is formed on the surface 2b of the film base 2 with an indium tin oxide layer 8, an indium tin oxide layer 9, and indium tin oxide.
  • This is a three-layer film in which the physical layer 10 is laminated in this order. Further, the tin oxide content of the indium tin oxide layer 9 is greater than the tin oxide content of the indium tin oxide layer 8 and the indium tin oxide layer 10.
  • the thickness of the indium tin oxide layer 9 is preferably larger than any of the thicknesses of the indium tin oxide layer 8 and the indium tin oxide layer 10, as shown in FIG.
  • the thickness of the indium tin oxide layer 9 is preferably 5 nm to 20 nm, and the thickness of the indium tin oxide layer 8 and the indium tin oxide layer 10 is preferably 1 nm to 10 nm, respectively.
  • the total thickness of the transparent conductor layer 4 (the total thickness of the indium tin oxide layers 8, 9, 10) is preferably 7 nm to 40 nm.
  • the tin oxide content of the indium tin oxide layer 9 is preferably 6% by weight to 15% by weight, and more preferably 8% by weight to 12% by weight.
  • the tin oxide contents of the indium tin oxide layer 8 and the indium tin oxide layer 10 are preferably 1% by weight to 5% by weight, and more preferably 2% by weight to 4% by weight, respectively.
  • the surface resistance value of the transparent conductor layer 4 after crystallization (after heat treatment) is 200 ⁇ / ⁇ or less, preferably 100 ⁇ / ⁇ to 160 ⁇ / ⁇ .
  • a roll formed by winding a long film substrate having a thickness of 500 nm to 5000 nm is placed in a sputtering apparatus, and the first surface of the long film substrate is spun on the first surface by a sputtering method while being rewound at a constant speed.
  • First, second and third indium tin oxide layers are sequentially stacked to form a first transparent conductive layer.
  • the front and back of the long film base are reversed, and the fourth, fifth, and sixth indium tin oxide layers are sequentially laminated on the second surface of the long film, and the second transparent conductive layer is formed.
  • the sputtering method is a method in which a substance scattered from the surface of the fired body target is attached to the substrate by causing a cation in plasma generated in a low-pressure gas to collide with the fired body target as a negative electrode.
  • the tin oxide content of each indium tin oxide layer can be adjusted by changing the tin oxide content of the fired body target material installed in the sputtering apparatus.
  • the thickness of each indium tin oxide layer can be appropriately adjusted by changing the conveying speed of the long film base material or by increasing or decreasing the number of target materials.
  • the long film on which each indium tin oxide layer is formed is wound once into a roll, and is continuously conveyed in a heating oven while being rewound, followed by heat treatment.
  • the first to sixth indium tin oxide layers formed on the film substrate are converted from amorphous to crystalline by heat treatment.
  • the conditions for the heat treatment may be a low temperature and a short time, the heating temperature is preferably 140 ° C. to 170 ° C., and the heating time is preferably 30 minutes. ⁇ 60 minutes.
  • both of the transparent conductor layers 3 and 4 formed on both surfaces of the film substrate 2 have a three-layer structure, and the tin oxide content of the indium tin oxide layer 6 in the transparent conductor layer 3 is
  • the tin oxide content of the indium tin oxide layers 5 and 7 is larger than any of the tin oxide contents of the indium tin oxide layers 5 and 7, and the tin oxide content of the indium tin oxide layer 9 in the transparent conductor layer 4 is Greater than any tin oxide content.
  • the crystallinity of the entire transparent conductor layers 3 and 4 can be significantly improved. Further, even under low temperature and short time heat treatment conditions, each indium tin oxide layer can be easily converted from amorphous to crystalline, and as a result, the surface resistance value of the transparent conductive film 1 can be reduced. It can be made smaller.
  • Example 1 A roll of a long film base in which an undercoat layer of a thermosetting resin containing a melamine resin having a thickness of 30 nm was formed on both sides of a polyethylene terephthalate film having a thickness of 100 ⁇ m was prepared.
  • the roll is put into a sputtering apparatus, and while being rewound at a constant speed, a first indium tin oxide layer having a tin oxide content of 3.3% by weight and a tin oxide content are formed on the first surface of the long film substrate.
  • a second indium tin oxide layer having an amount of 10% by weight and a third indium tin oxide layer having a tin oxide content of 3.3% by weight were sequentially laminated to produce a first transparent conductor layer having a total thickness of 28 nm.
  • the long film substrate is inverted, and a fourth indium tin oxide layer having a tin oxide content of 3.3% by weight and a tin oxide content are formed on the second surface of the long film substrate.
  • a 10% by weight fifth indium tin oxide layer and a sixth indium tin oxide layer having a tin oxide content of 3.3% by weight were sequentially laminated to produce a second transparent conductor layer having a total thickness of 28 nm.
  • Transparent electroconductivity is the same as in Example 1 except that the first indium tin oxide layer, the third indium tin oxide layer, the fourth indium tin oxide layer, and the sixth indium tin oxide layer are not formed.
  • a conductive film was prepared.
  • Example 1 and Comparative Examples 1 and 2 were measured and evaluated by the following methods.
  • Tables 1 and 2 show the results of measurement and evaluation by the methods (1) and (2) above.
  • the first transparent conductor layer has a three-layer structure, the thickness of the second indium tin oxide layer (SnO 2 : 10 wt%) is 14 nm, the first, third When the thickness of the indium tin oxide layer (SnO 2 : 3.3 wt%) was 7 nm and the total thickness was 28 nm, the surface of the transparent conductor layer after the heat treatment became crystalline, and a good surface resistance value was obtained. .
  • the thickness of the fifth indium tin oxide layer (SnO 2 : 10 wt%) in the second transparent conductor layer is 14 nm, and the thickness of the fourth and sixth indium tin oxide layers (SnO 2 : 3.3 wt%).
  • the thickness was 7 nm and the total thickness was 28 nm, the surface of the transparent conductor layer after the heat treatment became crystalline, and a good surface resistance value was obtained (135 ⁇ / ⁇ ).
  • the first transparent conductor layer has a two-layer structure, the thickness of the second indium tin oxide layer (SnO 2 : 10 wt%) is 14 nm, and the third indium When the thickness of the tin oxide layer (SnO 2 : 3.3 wt%) is 14 nm and the total thickness of the first transparent conductor layer is 28 nm, the surface of the transparent conductor layer after the heat treatment becomes amorphous, and the surface resistance The value increased significantly (350 ⁇ / ⁇ ).
  • the second transparent conductor layer has a two-layer structure, the thickness of the fifth indium tin oxide layer (SnO 2 : 10 wt%) is 14 nm, and the sixth indium tin oxide layer (SnO 2 : 3.3 wt%).
  • the total thickness of the second transparent conductor layer was 28 nm, the surface of the transparent conductor layer after the heat treatment became amorphous and the surface resistance value was greatly increased.
  • the first transparent conductor layer has a single layer structure, and the thickness of the second indium tin oxide layer (SnO 2 : 10 wt%) is 28 nm (the total thickness of the first transparent conductor layer is 28 nm), the surface of the transparent conductor layer after the heat treatment became amorphous, and the surface resistance value was greatly increased (350 ⁇ / ⁇ ).
  • the second transparent conductor layer has a single-layer structure and the thickness of the second indium tin oxide layer (SnO 2 : 10 wt%) is 28 nm (the total thickness of the second transparent conductor layer is 28 nm)
  • heat treatment is performed.
  • the subsequent transparent conductor layer surface became amorphous, and the surface resistance value was greatly increased.
  • each transparent conductor layer formed on both surfaces of the film base has a three-layer structure, and the second indium tin oxide layer having a high tin oxide content is converted into the first and third indium tin oxides having a low tin oxide content. It was found that by sandwiching between the physical layers, the crystallinity of the entire transparent conductor layer was remarkably improved, and a transparent conductive film having a small surface resistance value was obtained.
  • the use of the transparent conductive film according to the present invention is not particularly limited, and is preferably a capacitive touch sensor used for a mobile terminal such as a smartphone or a tablet terminal (also referred to as “Slate PC”).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2013/077374 2012-11-07 2013-10-08 透明導電性フィルム WO2014073310A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020157014098A KR20150080587A (ko) 2012-11-07 2013-10-08 투명 도전성 필름
CN201380069624.2A CN104903975A (zh) 2012-11-07 2013-10-08 透明导电膜
KR1020177011679A KR20170052697A (ko) 2012-11-07 2013-10-08 투명 도전성 필름

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012245694A JP6242571B2 (ja) 2012-11-07 2012-11-07 透明導電性フィルム
JP2012-245694 2012-11-07

Publications (1)

Publication Number Publication Date
WO2014073310A1 true WO2014073310A1 (ja) 2014-05-15

Family

ID=50684427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/077374 WO2014073310A1 (ja) 2012-11-07 2013-10-08 透明導電性フィルム

Country Status (5)

Country Link
JP (1) JP6242571B2 (ko)
KR (2) KR20150080587A (ko)
CN (1) CN104903975A (ko)
TW (1) TWI542465B (ko)
WO (1) WO2014073310A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI528075B (zh) 2014-08-12 2016-04-01 群創光電股份有限公司 顯示面板
WO2016104046A1 (ja) * 2014-12-22 2016-06-30 日東電工株式会社 透明導電性フィルム
JP6661335B2 (ja) * 2014-12-22 2020-03-11 日東電工株式会社 透明導電性フィルム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1049306A (ja) * 1996-08-02 1998-02-20 Oji Paper Co Ltd タッチパネル用透明導電性フィルム
JP2010212085A (ja) * 2009-03-10 2010-09-24 Toppan Printing Co Ltd 透明導電薄膜
JP2012114070A (ja) * 2010-11-05 2012-06-14 Nitto Denko Corp 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1281544C (zh) * 1998-08-31 2006-10-25 出光兴产株式会社 透明导电膜用靶、透明导电材料、透明导电玻璃及透明导电薄膜

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1049306A (ja) * 1996-08-02 1998-02-20 Oji Paper Co Ltd タッチパネル用透明導電性フィルム
JP2010212085A (ja) * 2009-03-10 2010-09-24 Toppan Printing Co Ltd 透明導電薄膜
JP2012114070A (ja) * 2010-11-05 2012-06-14 Nitto Denko Corp 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル

Also Published As

Publication number Publication date
CN104903975A (zh) 2015-09-09
JP2014096222A (ja) 2014-05-22
JP6242571B2 (ja) 2017-12-06
TW201429702A (zh) 2014-08-01
TWI542465B (zh) 2016-07-21
KR20170052697A (ko) 2017-05-12
KR20150080587A (ko) 2015-07-09

Similar Documents

Publication Publication Date Title
JP5190554B1 (ja) 透明導電性フィルム
TWI509477B (zh) 觸控面板及其製造方法
JP5101719B2 (ja) 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル
JP5572932B2 (ja) 透明導電性フィルムおよびタッチパネル
WO2012161095A1 (ja) 導電膜用素材、導電膜積層体、電子機器、及びそれらの製造方法
CN107705883B (zh) 透明电极、包括其的触摸传感器及影像显示装置
JP2013001009A5 (ko)
KR101865685B1 (ko) 투명 전극 패턴 적층체 및 이를 구비한 터치 스크린 패널
JP5781428B2 (ja) 導電性フィルムおよび導電性フィルムロール
WO2016163323A1 (ja) 透明導電フィルムおよび表示デバイス
JP5894820B2 (ja) 導電性フィルムロールの製造方法
WO2014073310A1 (ja) 透明導電性フィルム
KR20150061608A (ko) 전도성 구조체 전구체, 전도성 구조체 및 이의 제조방법
KR20150105798A (ko) 투명전극 및 그 제조방법
JP2017123333A (ja) 透明導電性フィルム
WO2017143680A1 (zh) 触控屏
WO2015159805A1 (ja) 積層体、導電性積層体、および電子機器
TW201504894A (zh) 壓電式觸控面板
KR20140090876A (ko) 다층 구조의 투명 전극
JP6410869B2 (ja) 導電性フィルムロールの製造方法
JP6562567B2 (ja) アルミニウムパターン及びその製造方法
WO2017143681A1 (zh) 触控屏
KR20200122447A (ko) 질소 도핑된 산화물 기반 다층 투명전극 및 그 제조방법
JP2016104914A (ja) 導電性フィルムロールの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13852820

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20157014098

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 13852820

Country of ref document: EP

Kind code of ref document: A1