WO2014073296A1 - 光インターコネクション装置 - Google Patents
光インターコネクション装置 Download PDFInfo
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- WO2014073296A1 WO2014073296A1 PCT/JP2013/076922 JP2013076922W WO2014073296A1 WO 2014073296 A1 WO2014073296 A1 WO 2014073296A1 JP 2013076922 W JP2013076922 W JP 2013076922W WO 2014073296 A1 WO2014073296 A1 WO 2014073296A1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 7
- 238000005253 cladding Methods 0.000 claims description 5
- 229910052795 boron group element Inorganic materials 0.000 claims description 4
- 229910052696 pnictogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12169—Annealing
Definitions
- the present invention relates to an optical interconnection device capable of realizing intra-chip optical interconnection.
- Optical interconnection is now widely used in the field of long-distance signal transmission using optical fibers, taking advantage of features such as high-speed and large-capacity transmission, excellent noise resistance, and cable diameter reduction.
- optical interconnection at an extremely short distance such as between boards, between chips, or within a chip is indispensable.
- the basic elements in short-distance optical interconnection are a light emitting element, an optical waveguide, and a light receiving element.
- the light emitting element is a device that emits light based on the signal of the transmission circuit and outputs an optical signal.
- the optical waveguide transmits the output optical signal.
- the light receiving element receives the transmitted optical signal. This is output to the receiving circuit.
- Patent Document 1 an ellipse formed on a substrate by optical coupling between a first optical device (light emitting element) mounted on the substrate and a second optical device (optical waveguide) formed on the substrate is disclosed. It is described that it is performed by a curved mirror composed of a part of a sphere.
- an optical coupler is used for optical coupling between the light emitting element or the light receiving element and the optical waveguide.
- This optical coupler requires a light deflecting element such as a mirror, a prism, and a diffraction grating and a light condensing element such as a lens.
- the optical coupler is formed with high accuracy.
- the above-described prior art uses a curved mirror in which the light deflecting element and the light condensing element are integrated, but this does not change the fact that high formation accuracy is required. Solution has not been reached.
- an optical coupler that optically couples a light-emitting element, a light-receiving element, and an optical waveguide with high coupling efficiency is required. Since it is difficult to obtain such an optical coupler, this has been a major obstacle to realizing on-chip optical interconnection.
- the present invention is an example of a problem to deal with such a problem. That is, it is possible to realize a highly efficient in-chip optical interconnection by combining a light emitting element or a light receiving element formed on a substrate and an optical waveguide without using an optical coupler. Is the purpose.
- an optical interconnection device includes a Si semiconductor substrate, an optical waveguide formed on the Si semiconductor substrate, and a light emitting element formed on one end of the optical waveguide.
- the light emitting device has a pn junction obtained by performing annealing treatment while irradiating light to a second semiconductor layer obtained by highly doping impurities in the first semiconductor layer in the Si semiconductor substrate. It is characterized by.
- a light emitting element having a light emitting portion as a pn junction formed in the Si semiconductor substrate is provided at the end of the optical waveguide formed in the Si semiconductor substrate.
- An optical signal emitted from the light emitting element can be introduced into the optical waveguide without using a vessel. This makes it possible to realize highly efficient intra-chip optical interconnection.
- FIG. 1 is an explanatory diagram showing an optical interconnection device according to an embodiment of the present invention.
- 1A is a plan view
- FIG. 1B is a sectional view taken along the line X1-X1 in FIG. 1A
- FIG. 1C is a sectional view taken along the line X2-X2 in FIG.
- the optical interconnection device 1 includes a Si semiconductor substrate 10, an optical waveguide 2 formed on the Si semiconductor substrate 10, and a light emitting element 3 formed on one end of the optical waveguide 2.
- a Si semiconductor substrate 10 is formed with a second semiconductor layer 10p obtained by doping the first semiconductor layer 10n with impurities.
- the second semiconductor layer 10p is, for example, a p-type semiconductor layer.
- a pn junction 10pn is formed near the boundary between the first semiconductor layer 10n and the second semiconductor layer 10p.
- An insulating layer 11 is formed on the Si semiconductor substrate 10.
- the insulating layer 11 includes an internal insulating layer 11 a formed inside the Si semiconductor substrate 10 and a surface insulating layer 11 b formed on the surface of the Si semiconductor substrate 10.
- the second semiconductor layer 10p is used as a light guide layer, and a cladding layer sandwiching the light guide layer is formed on the Si semiconductor substrate 10 by the surface insulating layer 11b.
- the surface insulating layer 11b serving as the cladding layer is formed along both side portions of the second semiconductor layer 10p serving as the light guide layer.
- the light emitting element 3 includes a pn junction portion 10pn formed near the boundary between the first semiconductor layer 10n and the second semiconductor layer 10p as a light emitting portion.
- the first electrode 12 is formed on the second semiconductor layer 10p, and the n + layer 13 formed on the outside of the second semiconductor layer 10p via the surface insulating layer 11b.
- a second electrode 14 is formed. When a forward voltage for the pn junction 10pn is applied between the first electrode 12 and the second electrode 14, light is emitted from the pn junction 10pn.
- the light-emitting element 3 includes the first electrode 12 formed on the second semiconductor layer 10p, the second electrode 14 formed on the first semiconductor layer 10n, the first semiconductor layer 10n, and the second semiconductor layer 10p.
- the first electrode 12 and the second electrode 14 are arranged on one surface side of the Si semiconductor substrate 10 with the surface insulating layer 11b interposed therebetween.
- the second electrode 14 is disposed on both sides of the first electrode 12, but the present invention is not limited thereto, and the second electrode 14 may be disposed only on one side of the first electrode 12.
- FIG. 2 is an explanatory view showing an example of a method for forming a light emitting element in the optical interconnection device according to the embodiment of the present invention.
- a first semiconductor layer 10n doped with an impurity selected from group 15 elements such as arsenic (As), phosphorus (P), and antimony (Sb) is formed on the Si semiconductor substrate 10.
- the first semiconductor layer 10n is an n-type semiconductor layer.
- the insulating layer 11 of the SiO 2 layer is formed by implanting oxygen into the first semiconductor layer 10n.
- an internal insulating layer 11a is formed inside the first semiconductor layer 10n, and a surface insulating layer 11b is formed on the surface of the first semiconductor layer 10n.
- the internal insulating layer 11a is formed by implanting oxygen into the surface of the Si semiconductor substrate 10 and then heat-oxidizing to diffuse the SiO 2 layer therein, or after forming the SiO 2 layer on the surface of the Si semiconductor substrate 10 It can be formed by forming a Si film.
- the surface insulating layer 11b can be formed by implanting oxygen into a mask opening patterned by a photolithography process and performing a thermal oxidation treatment.
- the n + layer 13 is formed, and an impurity selected from, for example, boron (B), aluminum (Al), gallium (Ga), which is a group 13 element, is highly doped between the surface insulating layers 11b.
- Two semiconductor layers (p-type semiconductor layers) 10p are formed. Then, as shown in FIG.
- the second electrode 14 is formed on the n + layer 13, the transparent electrode (ITO or the like) 15 is formed on the second semiconductor layer 10p, and then the second electrode 14 is formed.
- a forward voltage is applied between the transparent electrode 15 and the second semiconductor layer 10p by an annealing process using Joule heat of a current flowing through the pn junction 10pn (for example, boron (B), aluminum (Al), An impurity selected from gallium (Ga) is diffused.
- a current flowing through the pn junction 10pn for example, boron (B), aluminum (Al), An impurity selected from gallium (Ga) is diffused.
- dressed photons are generated in the vicinity of the pn junction 10 pn.
- the Si semiconductor substrate itself is an indirect transition semiconductor, has low light emission efficiency, and does not provide useful light emission simply by forming a pn junction, and does not itself have light transmittance in the visible light region.
- the Si semiconductor substrate 10 is annealed using phonons to generate dressed photons in the vicinity of the pn junction 10 pn so that Si, which is an indirect transition semiconductor, is as if it is a direct transition semiconductor.
- an impurity of a group 13 element such as boron (B) is doped at a high concentration.
- An example of doping conditions for impurities (in the case of boron (B)) at this time is a dose density of 5 ⁇ 10 13 / cm 2 , acceleration energy at the time of implantation: 700 keV, and the wavelength of the light L irradiated in the annealing process is desired. Wavelength band.
- the transparent electrode 15 is removed and the first electrode 12 is formed on the second semiconductor layer 10p, so that the pn junction 10pn is used as the light emitting portion. 3 is formed.
- the light emitting element 3 emits light having a wavelength equivalent to the wavelength of the light L irradiated in the annealing process from the pn junction 10 pn by applying a voltage between the first electrode 12 and the second electrode 14.
- FIG. 3 is an explanatory view showing an example of a method of forming an optical waveguide in the optical interconnection device according to the embodiment of the present invention.
- the process shown in FIG. 3A is performed in the same process as that of FIG. 2A described above, and an internal insulating layer 11a is formed inside the first semiconductor layer 10n, and a surface insulation is formed on the surface of the first semiconductor layer 10n. Layer 11b is formed.
- the process shown in FIG. 3B is performed in the same process as the process shown in FIG. 2B.
- the n + layer 13 is omitted, and the second semiconductor layer 10p is interposed between the surface insulating layers 11b. Forming.
- the process shown in FIG. 3C is the same as the process shown in FIG. 2C, and the second electrode 14 is formed on the first semiconductor layer 10n outside the surface insulating layer 11b. 2
- a forward voltage is applied between the second electrode 14 and the transparent electrode 15 to anneal the current flowing through the pn junction 10pn by Joule heat.
- the impurities of group 13 elements such as boron (B) are diffused by the treatment.
- dressed photons are generated in the vicinity of the pn junction 10 pn.
- the optical waveguide 2 having the second semiconductor layer 10p as the light guide layer and the surface insulating layer 11b as the cladding layer is obtained. It is formed.
- the optical waveguide 2 and the light emitting element 3 are formed in one Si semiconductor substrate 10, the light emitted from the pn junction 10pn of the light emitting element 3 is transmitted to the second semiconductor. The light propagates through the layer 10p and directly enters the light guide layer of the optical waveguide 2.
- the optical waveguide 2 and the light emitting element 3 are specially aligned. Therefore, the light emitted from the light emitting element 3 can be introduced into the optical waveguide 2 without loss.
- FIG. 4 is an explanatory view showing an optical interconnection device according to another embodiment of the present invention.
- 4A is a plan view
- FIG. 4B is a sectional view taken along the line X1-X1 in FIG. 4A
- FIG. 4C is a sectional view taken along the line X2-X2 in FIG.
- the optical interconnection device 1 (1A) is another example of the structure of the optical waveguide 2 (2A).
- the rib-type optical waveguide 2 (2A) is formed by forming the rib 2R on the surface of the first semiconductor layer 10n.
- an etching mask pattern for forming the rib 2R is formed on the extension of the pattern of the second semiconductor layer 10p of the light emitting element 3.
- the pn junction 10 pn of the light emitting element 3 and the optical axis of the optical waveguide 2 can be matched.
- the light propagating through the optical waveguide 2 is limited to infrared light that can be transmitted through the Si layer.
- FIG. 5 is an explanatory view showing an example of the structure of the light receiving element in the optical interconnection device according to the embodiment of the present invention
- FIG. 5A is a plan view
- FIG. 5B is FIG. 5A
- XX sectional view is shown.
- the light receiving element 4 has a structure having a pn junction portion 10pn similar to that of the light emitting element 3, and is formed in the same process as the forming process shown in FIG. be able to.
- the light receiving element 4 is formed at the other end of the optical waveguide 2, and includes a pn junction 10 pn in the extension of the second semiconductor layer 10 p of the optical waveguide 2.
- the light receiving element 4 applies a zero bias or a reverse bias between the terminal 4a connected to the first electrode 12 and the terminal 4b connected to the second electrode 14, and the light L1 propagating through the optical waveguide 2 is incident.
- the change of the generated current due to is output.
- the light receiving element 4 includes the first electrode 12 formed on the second semiconductor layer 10p, the second electrode 14 formed on the first semiconductor layer 10n, the first semiconductor layer 10n, and the second semiconductor layer 10p.
- the first electrode 12 and the second electrode 14 are arranged on one surface side of the Si semiconductor substrate 10 with the surface insulating layer 11b interposed therebetween.
- the second electrode 14 is disposed on both sides of the first electrode 12, but the present invention is not limited thereto, and the second electrode 14 may be disposed only on one side of the first electrode 12.
- the light receiving element 4 is not limited to the example shown in FIG. 5, and can be formed of a light receiving element mounted on or connected to the Si semiconductor substrate 10.
- FIG. 6 is an explanatory diagram showing a light emission driving unit that outputs a light emission signal of a light emitting element and a light reception detection unit that outputs a light reception signal of a light receiving element in the optical interconnection device according to the embodiment of the present invention.
- the Si semiconductor substrate 10 can include a light emission driving unit 30 that outputs a light emission signal of the light emitting element 3 or a light reception detection unit 40 that outputs a light reception signal of the light receiving element 4.
- the light emission drive unit 30 or the light reception detection unit 40 can be configured by a semiconductor element built in the Si semiconductor substrate 10.
- the light emission drive unit 30 or the light reception detection unit 40 can be configured by a semiconductor element 5 such as a MOS transistor, for example.
- a semiconductor element 5 such as a MOS transistor
- p-type semiconductor layers 5p1 and 5p2 are formed on an n-type semiconductor layer 10n of the Si semiconductor substrate 10, and a source electrode 5s and a drain electrode 5d are formed thereon, respectively, and a p-type semiconductor layer 5p1 is formed.
- a gate electrode 5g is formed on the channel region 5n via an insulating film 5b.
- the drain electrode 5d, the gate electrode 5g, and the source electrode 5s are connected to electrode wirings for driving the light emitting element 3 or the light receiving element 4, respectively.
- Such a semiconductor element 5 can be formed by a known semiconductor lithography process on the Si semiconductor substrate 10 in which the light emitting element 3 or the light receiving element 4 is formed.
- the optical interconnection device combines the light emitting element 3 or the light receiving element 4 formed on the semiconductor substrate and the optical waveguide 2 without using an optical coupler, A highly efficient intra-chip optical interconnection can be realized.
- the light emitted at the time of forming the pn junction 10 pn in the optical waveguide 2, the light emitting element 3, and the light receiving element 4 is made to have the same wavelength so that the emission wavelength, the optical transmission wavelength, and the light receiving wavelength can be matched.
- the wavelength of light used at this time can be arbitrarily selected in the range of near infrared to near ultraviolet. As a result, it is possible to realize intra-chip optical interconnection with less transmission loss and crosstalk in an arbitrary transmission band.
- optical waveguide 2 described above does not have to be a straight line, and may be curved or bent, or may be branched into a plurality of paths. Moreover, the structure which connects the signal of the 1 or several light emitting element 3 to the several or one light receiving element 4 may be sufficient.
- the Si semiconductor substrate has been described as an example, but another semiconductor substrate that can be substituted for the Si semiconductor substrate may be used.
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Abstract
Description
Claims (8)
- Si半導体基板と、前記Si半導体基板に形成された光導波路と、前記光導波路の一端部に形成された発光素子とを備え、
前記発光素子は、前記Si半導体基板における第1半導体層に不純物を高濃度ドープして得られる第2半導体層に光を照射しながらアニール処理を施すことで得られるpn接合部を有することを特徴とする光インターコネクション装置。 - 前記光導波路は、前記第2半導体層を光ガイド層とし、当該光ガイド層を挟むクラッド層が前記Si半導体基板に形成されていることを特徴とする請求項1に記載の光インターコネクション装置。
- 前記光導波路の他端部に形成された受光素子を備え、
前記受光素子は前記pn接合部を有することを特徴とする請求項1又は2記載の光インターコネクション装置。 - 前記第1半導体層は前記Si半導体基板に15族元素をドープしたn型半導体層であることを特徴とする請求項1に記載の光インターコネクション装置。
- 前記不純物は、13族元素から選択される材料であり、前記第2半導体層はp型半導体層であることを特徴とする請求項4記載の光インターコネクション装置。
- 前記Si半導体基板は、前記発光素子の発光信号を出力する発光駆動部を備え、前記発光駆動部は、前記Si半導体基板に作り込まれた半導体素子によって構成されていることを特徴とする請求項1~5のいずれかに記載の光インターコネクション装置。
- 前記Si半導体基板は、前記受光素子の受光信号を出力する受光検出部を備え、前記受光検出部は、前記Si半導体基板に作り込まれた半導体素子によって構成されていることを特徴とする請求項3に記載の光インターコネクション装置。
- 半導体基板における第1半導体層に不純物をドープして得られる第2半導体層によって形成される光ガイド層と、前記光ガイド層の両側部に沿って形成される絶縁層からなるクラッド層とを具備した光導波路を備え、
前記第2半導体層上に形成された第1電極と、前記第1半導体層上に形成された第2電極と、前記第1半導体層と前記第2半導体層によって形成されるpn接合部とを具備する発光又は受光素子を備え、
前記第1電極と前記第2電極は前記半導体基板の一面側において前記絶縁層を挟んで配備されることを特徴とする光インターコネクション装置。
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CN201380058372.3A CN104769472A (zh) | 2012-11-08 | 2013-10-03 | 光互连装置 |
US14/441,489 US20150301279A1 (en) | 2012-11-08 | 2013-10-03 | Optical interconnection device |
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JP2012246684A JP2014096458A (ja) | 2012-11-08 | 2012-11-08 | 光インターコネクション装置 |
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JP (1) | JP2014096458A (ja) |
KR (1) | KR20150084810A (ja) |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6150376A (ja) * | 1985-08-02 | 1986-03-12 | Agency Of Ind Science & Technol | 半導体デバイス及びその集積回路 |
JPH0376169A (ja) * | 1989-08-17 | 1991-04-02 | Semiconductor Energy Lab Co Ltd | ダイヤモンドを用いた電子装置の作製方法 |
JPH0697419A (ja) * | 1992-09-14 | 1994-04-08 | Nippon Steel Corp | 光送信素子 |
JPH08148280A (ja) * | 1994-04-14 | 1996-06-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2003008054A (ja) * | 2001-06-27 | 2003-01-10 | Sharp Corp | シリコン系発光受光素子およびその製造方法およびシリコン系光電気集積回路およびシリコン系光電気集積回路システム |
JP2004281972A (ja) * | 2003-03-19 | 2004-10-07 | Nippon Telegr & Teleph Corp <Ntt> | シリコン光集積回路 |
Family Cites Families (5)
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JP2000312054A (ja) * | 1998-04-28 | 2000-11-07 | Sharp Corp | 半導体素子の製造方法、及び半導体素子 |
JP3339488B2 (ja) * | 2000-02-25 | 2002-10-28 | 日本電気株式会社 | 光半導体装置およびその製造方法 |
GB0014042D0 (en) * | 2000-06-08 | 2000-08-02 | Univ Surrey | A radiation-emissive optoelectric device and a method of making same |
JP3415581B2 (ja) * | 2000-11-29 | 2003-06-09 | Necエレクトロニクス株式会社 | 半導体装置 |
US7747122B2 (en) * | 2008-09-30 | 2010-06-29 | Intel Corporation | Method and apparatus for high speed silicon optical modulation using PN diode |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6150376A (ja) * | 1985-08-02 | 1986-03-12 | Agency Of Ind Science & Technol | 半導体デバイス及びその集積回路 |
JPH0376169A (ja) * | 1989-08-17 | 1991-04-02 | Semiconductor Energy Lab Co Ltd | ダイヤモンドを用いた電子装置の作製方法 |
JPH0697419A (ja) * | 1992-09-14 | 1994-04-08 | Nippon Steel Corp | 光送信素子 |
JPH08148280A (ja) * | 1994-04-14 | 1996-06-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2003008054A (ja) * | 2001-06-27 | 2003-01-10 | Sharp Corp | シリコン系発光受光素子およびその製造方法およびシリコン系光電気集積回路およびシリコン系光電気集積回路システム |
JP2004281972A (ja) * | 2003-03-19 | 2004-10-07 | Nippon Telegr & Teleph Corp <Ntt> | シリコン光集積回路 |
Non-Patent Citations (1)
Title |
---|
T.KAWAZOE ET AL.: "Highly efficient and broadband Si homojunction structured near- infrared light emitting diodes based on the phonon-assisted optical near-field process", APPLIED PHYSICS B, vol. 104, 16 June 2011 (2011-06-16), pages 747 - 754 * |
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JP2014096458A (ja) | 2014-05-22 |
US20150301279A1 (en) | 2015-10-22 |
KR20150084810A (ko) | 2015-07-22 |
CN104769472A (zh) | 2015-07-08 |
TW201423190A (zh) | 2014-06-16 |
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