JP7090479B2 - 光半導体素子及び光伝送装置 - Google Patents
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Description
ここで、SiフォトニクスにおいてSACM構造を採用したAPDの参考例について説明する。図1は、参考例に係る光半導体素子の構成を示す断面図である。
先ず、第1の実施形態について説明する。第1の実施形態は、APDを含む光半導体素子に関する。図3Aは、第1の実施形態に係る光半導体素子の構成を示す上面図である。図3Bは、第1の実施形態に係る光半導体素子における半導体領域のレイアウトを示す図である。図3Cは、第1の実施形態に係る光半導体素子の構成を示す断面図である。図3Cは、図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第2の実施形態について説明する。第2の実施形態は、APDを含む光半導体素子に関する。図17は、第2の実施形態に係る光半導体素子の構成を示す断面図である。図17は、第1の実施形態に関する図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第3の実施形態について説明する。第3の実施形態は、APDを含む光半導体素子に関する。図18は、第3の実施形態に係る光半導体素子の構成を示す断面図である。図18は、第1の実施形態に関する図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第4の実施形態について説明する。第4の実施形態は、APDを含む光半導体素子に関する。図21は、第4の実施形態に係る光半導体素子の構成を示す断面図である。図21は、第1の実施形態に関する図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第5の実施形態について説明する。第5の実施形態は、光半導体素子を含む光伝送装置に関する。図22は、第5の実施形態に係る光伝送装置の構成を示すブロック図である。
第1の屈折率及び第1の光吸収係数を備えた第1の半導体層と、
第2の屈折率及び第2の光吸収係数を備え、前記第1の半導体層上に形成された第2の半導体層と、
を有し、
前記第2の屈折率は、前記第1の屈折率より大きく、
前記第2の光吸収係数は、前記第1の光吸収係数より大きく、
前記第1の半導体層は、
p型の第1の領域と、
n型の第2の領域と、
前記第1の領域と前記第2の領域との間のp型又はn型の第3の領域と、
前記第1の領域と前記第3の領域との間のi型の第4の領域と、
前記第2の領域と前記第3の領域との間のi型の第5の領域と、
を有し、
前記第2の半導体層は、前記第1の領域、前記第4の領域及び前記第3の領域上に形成されていることを特徴とする光半導体素子。
(付記2)
前記第1の領域にオーミック接触する第1の金属膜と、
前記第2の領域にオーミック接触する第2の金属膜と、
を有することを特徴とする付記1に記載の光半導体素子。
(付記3)
前記第1の領域は、
前記第1の金属膜と接する第6の領域と、
前記第4の領域と接する第7の領域と、
を有し、
前記第6の領域は前記第7の領域よりも高濃度でp型不純物を含有することを特徴とする付記2に記載の光半導体素子。
(付記4)
前記第3の領域がn型であり、
前記第2の領域は前記第3の領域よりも高濃度でn型不純物を含有することを特徴とする付記1乃至3のいずれか1項に記載の光半導体素子。
(付記5)
前記第1の半導体層の前記第2の半導体層と接する領域にリセスが形成されていることを特徴とする付記1乃至4のいずれか1項に記載の光半導体素子。
(付記6)
平面視で前記第1の半導体層と前記第2の半導体層とが重なり合う光電変換部と、
前記光電変換部に繋がるモード変換部と、
を有し、
前記モード変換部内で、前記第1の半導体層は、前記光電変換部に近づくほど幅が広くなる平面形状を有することを特徴とする付記1乃至5のいずれか1項に記載の光半導体素子。
(付記7)
前記第1の半導体層がSi層であり、
前記第2の半導体層がSixGe1-x層(0≦x<1)であることを特徴とする付記1乃至6のいずれか1項に記載の光半導体素子。
(付記8)
前記第1の半導体層がSi層であり、
前記第2の半導体層がGe1-xSnx層(0≦x<1)であることを特徴とする付記1乃至6のいずれか1項に記載の光半導体素子。
(付記9)
付記1乃至8のいずれか1項に記載の光半導体素子を有することを特徴とする光伝送装置。
113:Si層
121:p型領域
121A:p+Si領域
121B:p-Si領域
122:n+Si領域
123:p-Si領域
124、125:i型Si領域
133:i型Ge層
134P、134N:金属膜
141:導波路領域
142:モード変換部
143:光電変換部
223:n-Si領域
313:リセス
333:i型Ge層
500:光伝送装置
Claims (7)
- 第1の屈折率及び第1の光吸収係数を備えた第1の半導体層と、
第2の屈折率及び第2の光吸収係数を備え、前記第1の半導体層上に形成された第2の半導体層と、
を有し、
前記第2の屈折率は、前記第1の屈折率より大きく、
前記第2の光吸収係数は、前記第1の光吸収係数より大きく、
前記第1の半導体層は、
p型の第1の領域と、
n型の第2の領域と、
前記第1の領域と前記第2の領域との間のn型の第3の領域と、
前記第1の領域と前記第3の領域との間のi型の第4の領域と、
前記第2の領域と前記第3の領域との間のi型の第5の領域と、
を有し、
前記第2の半導体層は、前記第1の領域、前記第4の領域及び前記第3の領域上に形成されていることを特徴とする光半導体素子。 - 前記第2の領域は前記第3の領域よりも高濃度でn型不純物を含有することを特徴とする請求項1に記載の光半導体素子。
- 前記第1の領域にオーミック接触する第1の金属膜と、
前記第2の領域にオーミック接触する第2の金属膜と、
を有することを特徴とする請求項1又は2に記載の光半導体素子。 - 前記第1の領域は、
前記第1の金属膜と接する第6の領域と、
前記第4の領域と接する第7の領域と、
を有し、
前記第6の領域は前記第7の領域よりも高濃度でp型不純物を含有することを特徴とする請求項3に記載の光半導体素子。 - 前記第1の半導体層の前記第2の半導体層と接する領域にリセスが形成されていることを特徴とする請求項1乃至4のいずれか1項に記載の光半導体素子。
- 平面視で前記第1の半導体層と前記第2の半導体層とが重なり合う光電変換部と、
前記光電変換部に繋がるモード変換部と、
を有し、
前記モード変換部内で、前記第1の半導体層は、前記光電変換部に近づくほど幅が広くなる平面形状を有することを特徴とする請求項1乃至5のいずれか1項に記載の光半導体素子。 - 請求項1乃至6のいずれか1項に記載の光半導体素子を有することを特徴とする光伝送装置。
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