WO2014061629A1 - Bande de découpage en dés - Google Patents

Bande de découpage en dés Download PDF

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Publication number
WO2014061629A1
WO2014061629A1 PCT/JP2013/077898 JP2013077898W WO2014061629A1 WO 2014061629 A1 WO2014061629 A1 WO 2014061629A1 JP 2013077898 W JP2013077898 W JP 2013077898W WO 2014061629 A1 WO2014061629 A1 WO 2014061629A1
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WIPO (PCT)
Prior art keywords
adhesive layer
sensitive adhesive
pressure
dicing tape
meth
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PCT/JP2013/077898
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English (en)
Japanese (ja)
Inventor
佐野　透
朗 矢吹
有理 玉川
郷史 大田
阿久津　晃
侑弘 松原
Original Assignee
古河電気工業株式会社
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Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to SG11201502324TA priority Critical patent/SG11201502324TA/en
Priority to CN201380054399.5A priority patent/CN104756235B/zh
Priority to KR1020147020328A priority patent/KR101470802B1/ko
Publication of WO2014061629A1 publication Critical patent/WO2014061629A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J131/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Adhesives based on derivatives of such polymers
    • C09J131/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C09J131/04—Homopolymers or copolymers of vinyl acetate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/10—Esters; Ether-esters
    • C08K5/12—Esters; Ether-esters of cyclic polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer

Definitions

  • the present invention relates to a dicing tape.
  • the present invention relates to a dicing tape used for fixing a workpiece such as a semiconductor wafer when the semiconductor wafer or the like is cut and separated (diced) into small pieces of elements.
  • a semiconductor wafer made of silicon, gallium, arsenic or the like is manufactured in a large diameter state, then cut and separated (diced) into element pieces, and further transferred to a mounting process.
  • the semiconductor wafer is subjected to a dicing process, a cleaning process, an expanding process, a pick-up process, and a mounting process in a state where the semiconductor wafer is stuck and held on the dicing tape.
  • a dicing tape one in which a pressure-sensitive adhesive layer such as an acrylic pressure-sensitive adhesive is applied and formed on a substrate made of a plastic film is used. (For example, see Patent Document 1.)
  • the pick-up process involves lifting or rubbing the dicing tape 1 below the semiconductor chip 10 to be picked up with a push-up pin 12 in the form of dots or lines, and the semiconductor chip 10 and the dicing tape 1.
  • a method of picking up the semiconductor chip 10 by vacuum suction from the upper part with the suction collet 13 or the like in a state in which peeling is promoted has become the mainstream.
  • the push-up pin can be pushed up quickly while suppressing the impact on the semiconductor chip, when the push-up pin facilitates the peeling between the dicing tape and the semiconductor chip, if the peeling speed is high, the peeling force is also reduced. Since the semiconductor chip is thin and low in rigidity, there is a problem that the end portion of the semiconductor chip is deformed and chip cracking easily occurs. As a result, the semiconductor chip is picked up by vacuum suction of the suction collet after a sufficient separation area is secured by waiting until the peeling of the dicing tape and the semiconductor chip proceeds. It was.
  • an object of the present invention is to provide a dicing tape that can efficiently pick up a thin semiconductor chip in a short time without breaking the chip in the pick-up step after the dicing step.
  • the present inventors have obtained a dicing tape having an adhesive layer on at least one side of a base resin film, and a silicon mirror polished with # 2000
  • chip skipping during dicing of a semiconductor wafer is suppressed, and even if the pins are pushed up quickly during the pick-up process, there is no stress on the chips. It was found that the pick-up time can be shortened while the pick-up can be performed without defects such as chip cracking.
  • the present invention has been made based on this finding.
  • the dicing tape according to the present invention is a dicing tape that has a radiation-curable pressure-sensitive adhesive layer on at least one side of the base resin film, and bonds the wafer to the pressure-sensitive adhesive layer to dice the wafer
  • the pressure-sensitive adhesive layer is a phthalate ester based on 100 parts by mass of one or more polymers selected from the group consisting of an acrylic polymer, a vinyl acetate polymer, and an acrylic polymer having a carbon-carbon double bond. In the condition of 23 ° C. and 50% RH at a peeling angle of 90 degrees and a peeling speed of 50 mm / min.
  • the peeling force with respect to the silicon mirror wafer polished at # 2000 at a peeling angle of 90 degrees under the conditions of 23 ° C. and 50% RH is a peeling speed of 50 mm.
  • the peel force at / min is (i) and the peel force at 1000 mm / min is (ii), (ii) / (i) is 1 or less.
  • the dicing tape preferably has a solubility of the phthalates in water of 0.1 mg / L or less.
  • a thin semiconductor chip can be efficiently picked up in a short time without breaking the chip in the pick-up step after the dicing step.
  • FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of a radiation curable dicing tape 1 according to the present invention.
  • the dicing tape 1 has a base resin film 2 on the base resin film 2.
  • An adhesive layer 3 is formed.
  • a separator 4 provided as necessary is formed on the pressure-sensitive adhesive layer 3.
  • FIG. 1 shows a dicing tape 1 in which a pressure-sensitive adhesive layer 3 is provided on one surface of a base resin film 2. Of the base resin films 2, the other one in which the pressure-sensitive adhesive layer 3 is provided.
  • An adhesive layer may also be provided on the surface (not shown).
  • the base resin film 2 is not particularly limited and can be appropriately selected from the conventional base resin films 2. Since the radiation curable resin is used as the pressure-sensitive adhesive used for the pressure-sensitive adhesive layer 3, the pressure-sensitive adhesive layer 3 can be picked up so that the base resin film 2 can pick up the semiconductor chip 10 (see FIG. 3) obtained by cutting after dicing. It is necessary to transmit the radiation so as to reduce the adhesive strength.
  • Grayed plastic soft polyvinyl chloride, semi-hard polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber as well as high molecular material such as synthetic rubber is preferred. Further, a mixture of two or more selected from these groups or a multilayered structure may be used, and any one can be selected depending on the adhesiveness with the pressure-sensitive adhesive layer 3.
  • the thickness of the base resin film 2 is not particularly limited, but is preferably 10 to 500 ⁇ m, more preferably 40 to 400 ⁇ m, and particularly preferably 70 to 250 ⁇ m.
  • the surface in contact with the pressure-sensitive adhesive layer 3 of the base resin film 2 may be subjected to corona treatment or treatment with a primer or the like in order to improve adhesion.
  • the pressure-sensitive adhesive layer 3 is a radiation curable pressure-sensitive adhesive layer 3 and has a predetermined peeling force.
  • the resin composition constituting the pressure-sensitive adhesive layer 3 is not particularly limited. Resin composition comprising a polymer having a double bond in the polymer side chain or in the main chain or at the end of the main chain, or a resin composition in which an ultraviolet curable resin such as an ultraviolet curable monomer component or oligomer component is blended with a general adhesive It is preferable that it is a thing.
  • the resin composition is mainly composed of at least one pressure-sensitive adhesive selected from the group consisting of urethane acrylate, epoxy acrylate, polyester acrylate, polyether acrylate, (meth) acrylic acid oligomer, itaconic acid oligomer, and vinyl acetate. It is preferable to have as.
  • Examples of the resin composition comprising a polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the main chain terminal include an acrylic polymer (A) and / or a vinyl acetate polymer (B), a crosslinking agent ( A pressure-sensitive adhesive composition containing C) and, if necessary, a photopolymerization initiator (D) is used. Furthermore, in this Embodiment, phthalic acid ester (E) is included.
  • (A) Acrylic polymer As the acrylic polymer (A), the (meth) acrylic acid ester component is a monomer main component (mass% in the polymer exceeds 50%), and the (meth) acrylic acid ester component On the other hand, those which are copolymerized with a monomer (hydroxyl group-containing monomer) component that can be copolymerized and has a hydroxyl group in the molecule are exemplified.
  • (meth) acrylic acid ester includes both acrylic acid ester and methacrylic acid ester.
  • examples of the (meth) acrylic acid ester component as the main monomer component include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and (meth) acrylic.
  • the acrylic polymer (A) is preferably reacted with a polyether polyol via a polyisocyanate and a urethane bond of the crosslinking agent (C) and is crosslinked with the crosslinking agent to increase the mass average molecular weight (Mw).
  • the acrylic polymer (A) needs to have a hydroxyl group bonded to the main chain.
  • the acrylic polymer (A) having a hydroxyl group bonded to the main chain can be copolymerized with the (meth) acrylic acid ester and can be obtained by copolymerizing a monomer having a hydroxyl group. .
  • Monomers that can be copolymerized with (meth) acrylic acid esters and have a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (methacrylate). ) Acrylate, 6-hydroxyhexyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, glycerin mono (meth) acrylate and the like.
  • a functional group such as a carboxyl group or a glycidyl group may be pendant in addition to a hydroxyl group bonded (pendant) to the main chain.
  • the acrylic polymer (A) having a functional group other than a hydroxyl group can be copolymerized with a (meth) acrylic acid ester and can be obtained by copolymerizing a monomer having a functional group other than a hydroxyl group. .
  • (meth) acrylic acid (acrylic acid, methacrylic acid), itaconic acid, maleic acid, fumaric acid, crotonic acid, And isocrotonic acid.
  • examples of the monomer that can be copolymerized with (meth) acrylic acid ester and have a glycidyl group include glycidyl (meth) acrylate.
  • vinyl acetate polymer As a vinyl acetate polymer (B), the vinyl acetate polymer can also use the homopolymer obtained by superposing
  • the monomer component to be copolymerized with the vinyl acetate monomer in the vinyl acetate polymer is not particularly limited as long as it does not inhibit the above effect.
  • acrylic acid esters lauryl vinyl ether, octadecyl vinyl ether, perfluoropropyl vinyl ether, 2-chloroethyl vinyl ether, cyclohexyl vinyl ether, methyl vinyl ether and other vinyl ethers, vinyl versatate, vinyl stearate, acrylamide, methacrylamide, N, N-dimethylacrylamide, acrylic acid, crotonic acid, maleic acid, fumaric acid, itaconic acid, vinyl sulfonic acid, acrylic sulfonic acid, dimethylaminoethyl methacrylate, vinyl imidazole, vinyl pyridine, vinyl succinimide, vinylene carbonate, allyl alcohol And allyl acetate.
  • examples of the organic solvent when copolymerization is performed by solution polymerization include ketone-based, ester-based, alcohol-based, and aromatic-based organic solvents.
  • a good solvent for acrylic polymers such as toluene, ethyl acetate, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and the like, and preferably a solvent having a boiling point of 60 to 120 ° C.
  • Radical generators such as azobis compounds such as ⁇ , ⁇ '-azobisisobutylnitrile and organic peroxide compounds such as benzoberperoxide are usually used.
  • a catalyst and a polymerization inhibitor can be used in combination.
  • an acrylic polymer (A) having a desired molecular weight A vinyl acetate polymer (B) can be obtained.
  • a mercaptan or carbon tetrachloride solvent it is preferable to use a mercaptan or carbon tetrachloride solvent.
  • the copolymerization is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.
  • the acrylic polymer (A) and the vinyl acetate polymer (B) are preferably those having a low content of low molecular weight substances from the viewpoint of preventing contamination of the workpiece such as the semiconductor wafer 6. From this viewpoint, the mass average molecular weight (Mw) of the acrylic polymer (A) and the vinyl acetate polymer (B) is preferably 100,000 or more, more preferably 200,000 to 2,000,000. is there.
  • the weight average molecular weight (Mw) of the acrylic polymer (A) and the vinyl acetate polymer (B) If it is too small, the anti-contamination property to the workpiece such as the semiconductor wafer 6 is lowered, and if the mass average molecular weight (Mw) is too large, the viscosity of the pressure-sensitive adhesive composition for forming the radiation-curable pressure-sensitive adhesive layer 3 is low. It becomes very high and it becomes difficult to manufacture the dicing tape 1.
  • the acrylic polymer (A) and the vinyl acetate polymer (B) preferably have a glass transition point of ⁇ 70 ° C. to 0 ° C., more preferably ⁇ 65 ° C. to ⁇ 20 ° C., from the viewpoint of developing adhesiveness. It is. If the glass transition point is too small, the viscosity of the acrylic polymer (A) and the vinyl acetate polymer (B) is too low, and it becomes difficult to form a stable coating film. If the glass transition point is too high, the pressure-sensitive adhesive is hard. It becomes too much and the wettability with respect to an adherend deteriorates.
  • crosslinking agent (C) is crosslinked before radiation curing using at least a polyisocyanate as a crosslinking agent.
  • the polyisocyanate crosslinking agent is not particularly limited as long as it is a crosslinking agent having an isocyanate group. Examples thereof include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate and the like, or various multimers such as biuret type, isocyanurate type, adduct type and block type.
  • a crosslinking agent having reactivity with a hydroxyl group as a crosslinking agent, it becomes possible to incorporate the polyether polyol into the crosslinked structure, and the polyether polyol migrates to the surface of the semiconductor wafer 6 and contaminates the surface of the wafer 6. Can be prevented.
  • a crosslinking agent other than polyisocyanate can be used in combination as a crosslinking agent.
  • the acrylic polymer (A) or the vinyl acetate polymer (B) needs to have a functional group reactive to the crosslinking agent.
  • crosslinking agents examples include epoxy crosslinking agents, aziridine crosslinking agents, melamine resin crosslinking agents, urea resin crosslinking agents, acid anhydride compound crosslinking agents, polyamine crosslinking agents, and carboxyl group-containing polymer crosslinking agents. It can be appropriately selected from agents and the like.
  • (D) Photopolymerization initiator When the radiation curable pressure-sensitive adhesive layer 3 is irradiated with radiation, it efficiently polymerizes an acrylic polymer (or radiation curable component) having a carbon-carbon double bond in the molecule. In order to cure, a photopolymerization initiator can be included.
  • photopolymerization initiator examples include benzoin alkyl ether initiators such as benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl- Benzophenone initiators such as 4-methoxybenzophenone and polyvinylbenzophenone; ⁇ -hydroxycyclohexyl phenyl ketone, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ '- Dimethylacetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl]
  • An aromatic ketone initiator such as -2-morpholinopropane-1;
  • the blending amount of the photopolymerization initiator is appropriately selected from the range of 0.5 to 30 parts by mass, preferably 1 to 20 parts by mass with respect to 100 parts by mass of the acrylic polymer (A) or vinyl acetate polymer (B). can do.
  • Phthalic acid esters As phthalic acid esters (E), for example, dimethyl phthalate, diethyl phthalate, diallyl phthalate, dibutyl phthalate, di-hexyl phthalate, dioctyl phthalate, di-normal octyl phthalate, Examples include diisononyl phthalate, dinonyl phthalate, diisodecyl phthalate, butyl benzyl phthalate, etc., but good compatibility with adhesives and low solubility in water. Dioctyl phthalate, di-normal octyl phthalate, phthalate Diisononyl acid and dinonyl phthalate are preferred.
  • solubility in water is from 0 mg / L to 0.1 mg / L, preferably from 0 mg / L to 0.05 mg / L.
  • the pressure-sensitive adhesive layer 3 contains the phthalate ester (E), it has excellent flexibility, can suppress chip jumping during dicing, and is irradiated with radiation to adhere. After the agent layer 3 is cured, the peeling force becomes a certain value or less regardless of the peeling speed. Therefore, it is possible to easily pick up the semiconductor chip 10 while favorably suppressing chip cracking.
  • the effect is obtained immediately after the wafer 6 is polished, for example, when the dicing tape 1 is bonded to an unstable wafer 6 ground surface in which a natural oxide film is not entirely formed within 1 hour after the polishing is completed. It is particularly noticeable.
  • the blending amount of the phthalates is 0.5 to 30 parts by weight, preferably 1 to 20 parts by weight, more preferably 5 parts per 100 parts by weight of the acrylic polymer (A) or vinyl acetate polymer (B). It can be appropriately selected from the range of ⁇ 10 parts by mass. If the addition amount is small, the effect cannot be exhibited, and if it is too large, the compatibility with the pressure-sensitive adhesive deteriorates, leading to bleeding and causing contamination.
  • (F) Other compounding agents In the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 3, if necessary, for example, a tackifier, an anti-aging agent, a filler, a colorant, a flame retardant, an antistatic agent.
  • a tackifier for example, a tackifier, an anti-aging agent, a filler, a colorant, a flame retardant, an antistatic agent.
  • Known additives such as an agent, a softening agent, an ultraviolet absorber, an antioxidant, a plasticizer, and a surfactant may be included.
  • an acrylic polymer containing a functional group Maintains radiation-curability (radiation-polymerization) of carbon-carbon double bonds for compounds containing functional groups capable of reacting with the functional groups and carbon-carbon double bonds in acrylic polymers containing functional groups.
  • an acrylic polymer (A2) having a carbon-carbon double bond in the molecule may be used by performing a condensation reaction or an addition reaction.
  • the acrylic polymer (A) can be used as the acrylic polymer containing a functional group.
  • the acrylic polymer (A) and / or the vinyl acetate polymer (B) and an acrylic polymer (A2) having a carbon-carbon double bond in the molecule can be used in combination.
  • the side chain to be reacted is a carboxyl group or an acid anhydride.
  • the side chain to be reacted is an epoxy group
  • (meth) acrylic acid and the like are mentioned, and the side chain to be reacted is a hydroxyl group
  • Examples include 21 monoisocyanate alkyl (meth) acrylate.
  • a catalyst is not particularly limited, but a tin-based catalyst (particularly dibutyltin dilaurate) is suitable.
  • the amount of the catalyst used is not particularly limited, and for example, it is preferably about 0.05 to 1 part by mass with respect to 100 parts by mass of the acrylic polymer containing a functional group.
  • the pressure-sensitive adhesive layer 3 can be formed by using a conventional method for forming the pressure-sensitive adhesive layer 3. For example, a method of forming the pressure-sensitive adhesive composition on a predetermined surface of the base resin film 2 and forming the pressure-sensitive adhesive composition into a separator (for example, a plastic film or sheet coated with a release agent) Etc.), after forming the pressure-sensitive adhesive layer 3 on the substrate, the pressure-sensitive adhesive layer 3 can be formed on the substrate resin film 2 by a method of transferring the pressure-sensitive adhesive layer 3 to a predetermined surface of the substrate. it can.
  • the pressure-sensitive adhesive layer 3 may have a single layer form or a laminated form.
  • the thickness of the pressure-sensitive adhesive layer 3 is not particularly limited, but is preferably 3 to 20 ⁇ m. If the thickness of the pressure-sensitive adhesive layer 3 is too thin, the workpiece is easily peeled off during dicing, so that the cut semiconductor chip 10 cannot be held, and chip fly may occur. If the pressure-sensitive adhesive layer 3 is too thick, the vibration width of vibration generated when dicing the semiconductor wafer 6 is increased, chipping called chipping occurs, or the pressure-sensitive adhesive wound up on the side surface or surface of the chip during dicing. Debris can adhere and contaminate the chip.
  • the separator 4 is used for the purpose of protecting the pressure-sensitive adhesive layer 3, for the purpose of easily labeling the dicing tape 1 into a predetermined shape, and for the purpose of smoothing the pressure-sensitive adhesive as necessary.
  • the constituent material of the separator 4 include synthetic resin films such as paper, polyethylene, polypropylene, and polyethylene terephthalate.
  • the surface of the separator 4 may be subjected to a peeling treatment such as silicone treatment, long-chain alkyl treatment, or fluorine treatment as necessary.
  • the ultraviolet-ray prevention process may be performed as needed so that an adhesive sheet may not react with environmental ultraviolet rays.
  • the thickness of the separator 4 is usually about 10 to 100 ⁇ m, preferably about 25 to 50 ⁇ m.
  • the silicon mirror surface polished at # 2000 under conditions of 23 ° C. and 50% RH is bonded to the pressure-sensitive adhesive layer 3, and then the conditions of 50% RH at 23 ° C.
  • the peeling force (with respect to the silicon mirror surface, peeling angle: 90 °, peeling speed: 50 mm / min, 23 ° C., 50% RH) after 1 hour has elapsed and before the adhesive layer 3 is radiation-cured.
  • the dicing tape 1 having an adhesive force within this range can effectively hold the semiconductor chip 10 cut during dicing, and has an effect of preventing chip fly and cutting dust intrusion to the back surface of the semiconductor chip 10. be able to.
  • the peeling force after radiation-curing the pressure-sensitive adhesive layer 3 (measured in the same manner as above) (with respect to the silicon mirror surface, peeling angle: 90 °, peeling speed: 50 mm / min, conditions of 50% RH at 23 ° C. Lower) is 0.05 to 0.4 N / 25 mm, preferably 0.1 to 0.3 N / 25 mm, and more preferably 0.1 to 0.2 N / 25 mm. If this peeling force exceeds 0.4 N / 25 mm, it becomes difficult to peel off at the interface between the pressure-sensitive adhesive layer 3 and the semiconductor wafer 6 (see FIG. 2) at the time of picking up. The wafer 6 may break. On the other hand, if the peeling force is too low at 0.05 N / 25 mm or less, the adjacent semiconductor chip 10 (see FIG. 4) may be scattered during pickup.
  • the peeling force (against the silicon mirror surface, peeling angle: 90 °, 50% RH at 23 ° C.) after radiation-curing the pressure-sensitive adhesive layer 3 was measured in the same manner as described above at a peeling rate of 1000 mm / min. Lower) is 0.4 N / 25 mm or less. Further, regarding the peel force after radiation-curing the pressure-sensitive adhesive layer 3, when the peel force at a peel speed of 50 mm / min is (i) and the peel force at 1000 mm / min is (ii), (ii) / (I) is 1 or less, preferably 0.9 or less, and more preferably 0.8 or less. If this ratio exceeds 1, if the push-up speed of the push-up pin 12 (see FIG.
  • the value of (ii) / (i) is preferably 0.2 or more.
  • the dicing tape 1 of the present invention is subjected to a dicing process according to a conventional method after a mounting process to be attached to a semiconductor component which is an object to be cut, and further transferred to a radiation irradiation process and a pickup process.
  • semiconductor components include silicon semiconductors, compound semiconductors, semiconductor packages, glass, and ceramics.
  • the mounting process is usually performed continuously after the back grinding process of the semiconductor wafer 6 or the crushing layer removal process performed subsequent to the back grinding process of the semiconductor wafer 6 (the back grinding process or crushing layer removal of the semiconductor wafer 6). Immediately after the process) or within a short period of time (within several hours after completion of the back grinding process and crushing layer removal process of the semiconductor wafer 6).
  • the workpiece such as the semiconductor wafer 6 and the dicing tape 1 are usually superposed in such a manner that the ground surface of the workpiece and the adhesive layer 3 are in contact with each other.
  • the workpiece and the dicing tape 1 are attached while being pressed by a conventional pressing means such as a pressing means using a pressure roll (not shown).
  • the ring frame 7 for holding the dicing tape 1 in each step is stuck outside the bonding position of the workpiece (semiconductor wafer 6) of the pressure-sensitive adhesive layer 3.
  • the dicing tape 1 with the object to be cut is placed on the suction stage 8, the blade 9 is rotated at a high speed, and the object to be cut is cut into a predetermined size.
  • a cutting method called full cut that cuts a part of the dicing tape 1 can be adopted.
  • the pressure-sensitive adhesive layer 3 is cured by irradiation with radiation, particularly preferably ultraviolet rays, the adhesiveness is lowered, and a diced cut piece such as the semiconductor chip 10 from the dicing tape 1 can be easily performed.
  • the pickup process As shown in FIG. 4, an expanding process can be provided.
  • the dicing tape 1 is stretched in the circumferential direction and the radial direction by raising the cylindrical push-up member 11 from below the dicing tape 1 so as to abut between the ring frame 7 and the cut piece.
  • the pickup method is not particularly limited, and various conventional pickup methods can be employed. For example, as shown in FIG.
  • each cut piece (semiconductor chip 10) is pushed up from below the dicing tape 1 by a push-up pin 12, and the pushed-up cut piece (semiconductor chip 10) is a pickup device such as a suction collet 13. The method of picking up is mentioned.
  • Example 1 Acrylic polymer in which hydroxyl groups are bonded to the main chain by copolymerizing ethyl acrylate, butyl acrylate and 2-hydroxyethyl acrylate in a mass ratio of 7: 2: 1 in ethyl acetate by a conventional method.
  • a solution containing (A) (acrylic copolymer-containing solution Aa) was obtained.
  • the base resin film As the base resin film, a low-density polyethylene film (thickness: 100 ⁇ m) subjected to corona discharge treatment on one side is used, and the ultraviolet curable acrylic pressure-sensitive adhesive solution X1 is applied to the corona discharge treatment surface at 80 ° C. And heated for 10 minutes for crosslinking by heating. As a result, an ultraviolet curable pressure-sensitive adhesive layer (thickness: 10 ⁇ m) as a radiation-curable pressure-sensitive adhesive layer was formed on the base resin film. Next, a separator was bonded to the surface of the ultraviolet curable pressure-sensitive adhesive layer to produce an ultraviolet curable dicing tape according to Example 1.
  • Example 2 An ultraviolet curable dicing tape according to Example 2 was produced in the same manner as in Example 1 except that 0.5 part by mass of dioctyl phthalate was changed.
  • Example 3 An ultraviolet curable dicing tape according to Example 3 was produced in the same manner as Example 1 except that dioctyl phthalate was changed to 30 parts by mass.
  • Example 4 An ultraviolet curable dicing tape according to Example 4 was produced in the same manner as in Example 1 except that 5 parts by mass of diisononyl phthalate was added instead of dioctyl phthalate.
  • Example 5 An ultraviolet curable dicing tape according to Example 5 was produced in the same manner as in Example 1 except that 5 parts by mass of dibutyl phthalate was added instead of dioctyl phthalate.
  • Example 6 Vinyl acetate was polymerized in a conventional manner in ethyl acetate to obtain a solution containing the vinyl acetate polymer (B) (vinyl acetate polymer-containing solution Ba). Subsequently, for 100 parts by mass of the vinyl acetate polymer (B) (polyvinyl acetate), 5 parts by mass of dioctyl phthalate and a trade name “UV3000” as a radiation curing agent (manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) 30 parts by mass, 2.5 parts by mass of the trade name “Irgacure 651” (manufactured by BASF) as a photopolymerization initiator, and a polyisocyanate compound (trade name “Coronate L”, Nippon Polyurethane Industry Co., Ltd.) 1 part by mass was added to obtain an ultraviolet curable vinyl acetate pressure-sensitive adhesive solution X2.
  • UV3000 a radiation curing agent
  • BASF trade
  • Example 2 Thereafter, in the same manner as in Example 1, an ultraviolet curable pressure-sensitive adhesive layer was formed on the base resin film, a separator was bonded to the surface of the ultraviolet curable pressure-sensitive adhesive layer, and ultraviolet curable dicing according to Example 6 was performed. A tape was prepared.
  • Example 7 As a monomer component, acrylic polymer (A) in which 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate are copolymerized in ethyl acetate at a mass ratio of 8: 2 and a hydroxyl group is bonded to the main chain A solution (acrylic copolymer-containing solution Ab) containing was obtained. Next, 2-methacryloyloxyethyl isocyanate as a compound having a photopolymerizable carbon-carbon double bond and a functional group and dibutyltin dilaurate as a catalyst are added to the acrylic copolymer-containing solution Ab at 50 ° C.
  • the solution was reacted for 24 hours to obtain a solution (acrylic copolymer-containing solution A2b) containing an acrylic polymer (A2) having a carbon-carbon double bond at the end of the side chain.
  • a solution (acrylic copolymer-containing solution A2b) containing an acrylic polymer (A2) having a carbon-carbon double bond at the end of the side chain was measured by the acetylation method with pyridine-acetic anhydride described in JIS K0070, it was 9.8 mgKOH / g. It was.
  • the base resin film As the base resin film, a low-density polyethylene film (thickness: 100 ⁇ m) subjected to corona discharge treatment on one side was used, and the ultraviolet curable acrylic pressure-sensitive adhesive solution X3 was applied to the corona discharge treatment surface at 80 ° C. And heated for 10 minutes for crosslinking by heating. As a result, an ultraviolet curable pressure-sensitive adhesive layer (thickness: 10 ⁇ m) as a radiation-curable pressure-sensitive adhesive layer was formed on the base resin film. Next, a separator was bonded to the surface of the ultraviolet curable pressure-sensitive adhesive layer to produce an ultraviolet curable dicing tape according to Example 7.
  • Comparative Example 1 An ultraviolet curable dicing tape according to Comparative Example 1 was produced in the same manner as in Example 1 except that dioctyl phthalate was not added.
  • Comparative Example 2 An ultraviolet curable dicing tape according to Comparative Example 2 was produced in the same manner as in Example 1 except that dioctyl phthalate was changed to 0.45 parts by mass.
  • Comparative Example 3 An ultraviolet curable dicing tape according to Comparative Example 3 was produced in the same manner as in Example 1 except that dioctyl phthalate was changed to 35 parts by mass.
  • Comparative Example 4 An ultraviolet curable dicing tape according to Comparative Example 4 was produced in the same manner as in Example 6 except that dioctyl phthalate was not added.
  • Comparative Example 5 An ultraviolet curable dicing tape according to Comparative Example 5 was produced in the same manner as Example 7 except that dioctyl phthalate was not added.
  • the back surface of an 8-inch silicon wafer was ground by 30 ⁇ m on two axes, and then ground until the final thickness of the silicon wafer was 50 ⁇ m or 300 ⁇ m.
  • the polishing conditions are as follows. (Polishing conditions) Grinder: Product name “DFG-840”, manufactured by DISCO Corporation 1 axis: # 600 whetstone (rotation speed: 4800 rpm, down speed: P1: 3.0 ⁇ m / sec, P2: 2.0 ⁇ m / sec) 2-axis: # 2000 grinding wheel (rotation speed: 5500 rpm, down speed: P1: 0.8 ⁇ m / sec, P2: 0.6 ⁇ m / sec)
  • the adhesive layer was cured by irradiating UV light at 200 mJ / cm 2 from the base resin film side of the dicing tape, and then separated into individual pieces.
  • the semiconductor chip was picked up using a die picker device. 50 arbitrary semiconductor chips were picked up under the following pickup conditions, the number of semiconductor chips successfully picked up without causing chip breakage or chip jumping was counted, and the pickup success rate was evaluated. The results are shown in Tables 1 and 2. A pickup having a success rate of 90% or more can be determined to be acceptable. (Pickup condition 1: Silicon wafer 300 ⁇ m thick) Die bonder: “CAP-300II” manufactured by Canon Machinery Inc.
  • Pins 4-pin spacing: 3.8 x 3.8 mm Pin tip curvature: 0.25mm Pin push-up amount: 0.40mm Pin push-up speed: 50mm / min Pin push-up holding time: 1000ms (Pickup condition 2: silicon wafer 50 ⁇ m thick) Die bonder: “CAP-300II” manufactured by Canon Machinery Inc. Number of pins: 4-pin spacing: 7.8 x 7.8 mm Pin tip curvature: 0.25mm Pin push-up amount: 0.40mm Pin push-up speed: 800mm / min Pin push-up holding time: 100 ms
  • ⁇ Wafer surface contamination> The surface of the picked-up chip bonded to the dicing tape is measured by XPS (X-ray Photoelectron Spectroscopy) under the following measurement conditions, and the carbon derived from contaminants from the dicing tape is measured. The amount of increase was calculated as mol% in comparison with the wafer not bonded to the dicing tape. The results are shown in Tables 1 and 2. An increase in carbon of less than 5 mol% is indicated as excellent, ⁇ , 5 to less than 10 mol% as good, O, 10 to less than 30 mol% as acceptable, ⁇ , 30 mol% or more as defective. (Measurement condition) X-ray source: MgK ⁇ X-ray: Take off angle 45 ° Measurement area: 1.1mm ⁇
  • the peeling force with the silicon mirror wafer polished in # 2000 at a peeling angle of 90 degrees and a peeling speed of 50 mm / min under the conditions of 23 ° C. and 50% RH It is 0.5 N / 25 mm or more before radiation curing, 0.05 to 0.4 N / 25 mm after radiation-curing the pressure-sensitive adhesive layer, and after radiation-curing the pressure-sensitive adhesive layer.
  • the peeling force at a peeling speed of 50 mm / min is (i) 1000 mm / min.
  • Example 3 containing more than 30 parts by mass of the phthalate ester with respect to 100 parts by mass of the acrylic polymer (A), the compatibility with the pressure-sensitive adhesive is poor, and the addition amount is 0.5 to 30 parts by mass. Compared with some cases, the wafer contamination was slightly inferior. Further, in Example 4 in which diisononyl phthalate was added, the results were inferior in compatibility with the case where other phthalates were added, but there was no problem in practical use. In Example 5 in which dibutyl phthalate having a solubility in water exceeding 0.1 mg / L was added, dibutyl phthalate was dissolved in cutting water during dicing and the wafer surface contamination was deteriorated. there were.
  • Dicing tape 2 Base resin film 3: Adhesive layer 4: Separator 6: Semiconductor wafer 10: Semiconductor chip

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

La présente invention a trait à une bande de découpage en dés à partir de laquelle une puce de semi-conducteur mince peut être saisie de façon efficace en un court laps de temps sans qu'aucune fissure ne se produise sur la puce au cours d'une étape de saisie après l'étape de découpage en dés. Une bande de découpage en dés (1) selon la présente invention est pourvue d'une couche adhésive qui contient 0,5 à 30 parties en masse d'un ester d'acide phtalique pour 100 parties en masse d'un ou de plusieurs polymères qui sont choisis dans le groupe comprenant des polymères acryliques, des polymères d'acétate de vinyle et des polymères à base d'acrylique dotés d'une double liaison carbone-carbone. La couche adhésive est dotée d'une résistance à l'arrachement supérieure ou égale à 0,5 N/25 mm avant le durcissement par irradiation, tout en étant dotée d'une résistance à l'arrachement de 0,05 à 0,4 N/25 mm après le durcissement par irradiation. Si (i) est la résistance à l'arrachement à une vitesse d'arrachement de 50 mm/min après le durcissement par irradiation et si (ii) est la résistance à l'arrachement à une vitesse d'arrachement de 1 000 mm/min après le durcissement par irradiation, la relation (ii)/(i) est inférieure ou égale à 1.
PCT/JP2013/077898 2012-10-18 2013-10-15 Bande de découpage en dés WO2014061629A1 (fr)

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SG11201502324TA SG11201502324TA (en) 2012-10-18 2013-10-15 Dicing tape
CN201380054399.5A CN104756235B (zh) 2012-10-18 2013-10-15 切割胶带
KR1020147020328A KR101470802B1 (ko) 2012-10-18 2013-10-15 다이싱 테이프

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WO2022255322A1 (fr) * 2021-06-02 2022-12-08 昭和電工マテリアルズ株式会社 Procédé de production de dispositif à semi-conducteur, et film intégré de liaison de puce de découpage

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JP6623098B2 (ja) * 2016-03-29 2019-12-18 リンテック株式会社 ガラスダイシング用粘着シートおよびその製造方法
JP6673734B2 (ja) * 2016-03-29 2020-03-25 リンテック株式会社 ガラスダイシング用粘着シートおよびその製造方法
JP6745136B2 (ja) * 2016-05-16 2020-08-26 株式会社アルバック 電子部品の製造方法および処理システム
KR101877897B1 (ko) * 2017-03-06 2018-07-12 엘비세미콘 주식회사 범프 구조체의 제조방법
JP7041476B2 (ja) * 2017-07-04 2022-03-24 日東電工株式会社 ダイシングテープおよびダイシングダイボンドフィルム
JP7224231B2 (ja) * 2019-04-17 2023-02-17 日東電工株式会社 ダイシングダイボンドフィルム

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WO2022255322A1 (fr) * 2021-06-02 2022-12-08 昭和電工マテリアルズ株式会社 Procédé de production de dispositif à semi-conducteur, et film intégré de liaison de puce de découpage

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SG11201502324TA (en) 2015-05-28
JP5294366B1 (ja) 2013-09-18
KR101470802B1 (ko) 2014-12-08
CN104756235B (zh) 2017-05-24
JP2014082414A (ja) 2014-05-08
TW201430092A (zh) 2014-08-01

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