TW201430092A - 切割膠帶 - Google Patents
切割膠帶 Download PDFInfo
- Publication number
- TW201430092A TW201430092A TW102137487A TW102137487A TW201430092A TW 201430092 A TW201430092 A TW 201430092A TW 102137487 A TW102137487 A TW 102137487A TW 102137487 A TW102137487 A TW 102137487A TW 201430092 A TW201430092 A TW 201430092A
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- dicing tape
- wafer
- acrylate
- mass
- Prior art date
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- 239000012790 adhesive layer Substances 0.000 claims abstract description 71
- 229920000058 polyacrylate Polymers 0.000 claims abstract description 43
- 229920000642 polymer Polymers 0.000 claims abstract description 35
- -1 phthalic acid ester Chemical class 0.000 claims abstract description 31
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 230000005855 radiation Effects 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 60
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000003847 radiation curing Methods 0.000 abstract description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 98
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 47
- 238000005520 cutting process Methods 0.000 description 33
- 239000000853 adhesive Substances 0.000 description 21
- 230000001070 adhesive effect Effects 0.000 description 21
- 239000003431 cross linking reagent Substances 0.000 description 21
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 18
- 125000000524 functional group Chemical group 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 239000003999 initiator Substances 0.000 description 16
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 14
- 238000000227 grinding Methods 0.000 description 13
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000178 monomer Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 8
- 239000005056 polyisocyanate Substances 0.000 description 8
- 229920001228 polyisocyanate Polymers 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 238000005510 radiation hardening Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 239000003522 acrylic cement Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 229920006243 acrylic copolymer Polymers 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000007334 copolymerization reaction Methods 0.000 description 4
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000007259 addition reaction Methods 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- 238000003851 corona treatment Methods 0.000 description 3
- DROMNWUQASBTFM-UHFFFAOYSA-N dinonyl benzene-1,2-dicarboxylate Chemical compound CCCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCCC DROMNWUQASBTFM-UHFFFAOYSA-N 0.000 description 3
- 150000002148 esters Chemical group 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 150000003077 polyols Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 3
- CPULIKNSOUFMPL-UHFFFAOYSA-N 2,4-dimethylthiophene Chemical compound CC1=CSC(C)=C1 CPULIKNSOUFMPL-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- ROGIWVXWXZRRMZ-UHFFFAOYSA-N 2-methylbuta-1,3-diene;styrene Chemical class CC(=C)C=C.C=CC1=CC=CC=C1 ROGIWVXWXZRRMZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229920001684 low density polyethylene Polymers 0.000 description 2
- 239000004702 low-density polyethylene Substances 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 2
- JQCXWCOOWVGKMT-UHFFFAOYSA-N phthalic acid diheptyl ester Natural products CCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC JQCXWCOOWVGKMT-UHFFFAOYSA-N 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- SFUVLEGIZGPPNN-UHFFFAOYSA-N (2-pyridin-2-ylacetyl) 2-pyridin-2-ylacetate Chemical compound C=1C=CC=NC=1CC(=O)OC(=O)CC1=CC=CC=N1 SFUVLEGIZGPPNN-UHFFFAOYSA-N 0.000 description 1
- BZPCMSSQHRAJCC-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,5-nonafluoro-1-(1,2,3,3,4,4,5,5,5-nonafluoropent-1-enoxy)pent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)=C(F)OC(F)=C(F)C(F)(F)C(F)(F)C(F)(F)F BZPCMSSQHRAJCC-UHFFFAOYSA-N 0.000 description 1
- JWTGRKUQJXIWCV-UHFFFAOYSA-N 1,2,3-trihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(O)C(O)CO JWTGRKUQJXIWCV-UHFFFAOYSA-N 0.000 description 1
- SKYXLDSRLNRAPS-UHFFFAOYSA-N 1,2,4-trifluoro-5-methoxybenzene Chemical compound COC1=CC(F)=C(F)C=C1F SKYXLDSRLNRAPS-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- QWQFVUQPHUKAMY-UHFFFAOYSA-N 1,2-diphenyl-2-propoxyethanone Chemical compound C=1C=CC=CC=1C(OCCC)C(=O)C1=CC=CC=C1 QWQFVUQPHUKAMY-UHFFFAOYSA-N 0.000 description 1
- VAYTZRYEBVHVLE-UHFFFAOYSA-N 1,3-dioxol-2-one Chemical compound O=C1OC=CO1 VAYTZRYEBVHVLE-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- LAYAKLSFVAPMEL-UHFFFAOYSA-N 1-ethenoxydodecane Chemical compound CCCCCCCCCCCCOC=C LAYAKLSFVAPMEL-UHFFFAOYSA-N 0.000 description 1
- QJJDJWUCRAPCOL-UHFFFAOYSA-N 1-ethenoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOC=C QJJDJWUCRAPCOL-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- RKMNQXFECVRTNI-UHFFFAOYSA-N 1-methylcyclohexa-2,4-dien-1-ol Chemical compound CC1(O)CC=CC=C1 RKMNQXFECVRTNI-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- WEGHDRZIDAWVKB-UHFFFAOYSA-N 2-benzhydrylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 WEGHDRZIDAWVKB-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- JSLWEMZSKIWXQB-UHFFFAOYSA-N 2-dodecylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CCCCCCCCCCCC)=CC=C3SC2=C1 JSLWEMZSKIWXQB-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
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- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- XDLZGEOIKKECCA-UHFFFAOYSA-N 2-methylthiophene 1-oxide Chemical compound CC1=CC=CS1=O XDLZGEOIKKECCA-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- SENMPMXZMGNQAG-UHFFFAOYSA-N 3,4-dihydro-2,5-benzodioxocine-1,6-dione Chemical compound O=C1OCCOC(=O)C2=CC=CC=C12 SENMPMXZMGNQAG-UHFFFAOYSA-N 0.000 description 1
- REEBWSYYNPPSKV-UHFFFAOYSA-N 3-[(4-formylphenoxy)methyl]thiophene-2-carbonitrile Chemical compound C1=CC(C=O)=CC=C1OCC1=C(C#N)SC=C1 REEBWSYYNPPSKV-UHFFFAOYSA-N 0.000 description 1
- KPPONQWQFTVQMM-UHFFFAOYSA-N 3-ethenylpyrrolidine-2,5-dione Chemical compound C=CC1CC(=O)NC1=O KPPONQWQFTVQMM-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 1
- LNRIBIFTBJLRPN-UHFFFAOYSA-N C(CCCCCCCCC)[PH2]=O Chemical class C(CCCCCCCCC)[PH2]=O LNRIBIFTBJLRPN-UHFFFAOYSA-N 0.000 description 1
- OLCGOZPSVSTZDP-UHFFFAOYSA-N CC(=COCCN=C=O)C Chemical compound CC(=COCCN=C=O)C OLCGOZPSVSTZDP-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- XDLNRRRJZOJTRW-UHFFFAOYSA-N thiohypochlorous acid Chemical compound ClS XDLNRRRJZOJTRW-UHFFFAOYSA-N 0.000 description 1
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- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J131/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid, or of a haloformic acid; Adhesives based on derivatives of such polymers
- C09J131/02—Homopolymers or copolymers of esters of monocarboxylic acids
- C09J131/04—Homopolymers or copolymers of vinyl acetate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
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Abstract
本發明提供一種切割膠帶,其係在切割步驟後之拾取步驟中,不會使薄型之半導體晶片產生晶片破裂,且可在短時間內效率良好地拾取。本發明之切割膠帶(1)之黏著劑層係相對於由丙烯酸聚合物、乙酸乙烯酯聚合物及具有碳-碳雙鍵之丙烯酸系聚合物所組成群組選出之1種或2種以上之聚合物100質量份,含0.5~30質量份之鄰苯二甲酸酯類,且剝離力在經輻射線硬化前為0.5N/25mm以上,經輻射線硬化後為0.05~0.4N/25mm,將輻射線硬化後之以剝離速度50mm/min之剝離力設為(i),以1000mm/min之剝離力設為(ii)時,(ii)/(i)為1以下。
Description
本發明係關於切割膠帶。尤其,本發明係關於將半導體晶圓等切斷分離(切割)成元件之小片時,用於固定該半導體晶圓等之被切斷體用之切割膠帶。
過去,以矽、鎵、砷等作為材料之半導體晶圓係以大直徑狀態製造後,經切斷分離(切割)成元件小片,進而移送到安裝步驟。此時,半導體晶圓係藉切割膠帶貼附並保持之狀態實施切割步驟、洗淨步驟、延伸步驟、拾取(pickup)步驟、安裝步驟之各步驟。前述切割膠帶係使用將丙烯酸系黏著劑等黏著劑層塗佈形成於由塑膠膜所成之基材上者(參照例如專利文獻1)。
前述拾取步驟係如圖5所示,藉由銷12將經拾取之半導體晶片10之下部之切割膠帶1頂起,以點狀或線狀提起,或者使互相磨擦,以助長該半導體晶片10與切割膠帶1剝離之狀態下,藉由以吸附治具13等自上部真空吸附,拾取半導體晶片10之方式為主流。
[先前技術文獻]
[專利文獻]
[專利文獻1]特開2010-225753號公報
然而,隨著半導體元件之薄型化進展,尤其是半導體晶圓之厚度成為100μm以下時,以往之切割膠帶若如以往使頂起銷快速頂起而拾取半導體晶片時,會有因頂起銷之頂起引起之衝擊,使半導體晶片非常容易破裂之問題。因此,欲抑制對半導體晶片之衝擊而使頂起銷緩慢地上提時,會有拾取時間變長之問題。且,以往之切割膠帶中,切割膠帶與半導體晶片之剝離力於剝離速度愈快時愈大。因此,即使例如一面抑制對半導體晶片之衝擊一面使頂起銷快速地頂起,亦有藉由頂起銷,在助長切割膠帶與半導體晶片之剝離時,剝離之進行速度快速時剝離力亦變大,故薄型且剛性低之半導體晶片會有於其端部產生變形且而容易引起晶片破裂之問題。因此,在切割膠帶與半導體晶片之剝離進行為止進行待機並於確保充分之剝離面積後,再藉由吸附治具之真空吸附拾取半導體晶片,仍然有拾取時間變長之問題。
因此,本發明之目的係提供一種切割步驟後之拾取步驟中,不會使薄型半導體晶片產生晶片破裂,可在短時間效率良好地拾取之切割膠帶。
本發明人等為達成上述目的而重複積極研究之結果,發現於基材樹脂薄膜之至少單面具有黏著劑層而成之切割膠帶,藉由使與以#2000研磨之矽鏡面晶圓之各種剝離力成為特定之值,可一面抑制半導體晶圓切割時之晶片飛散,一面在拾取步驟時即使快速以銷等進行頂起亦不會對晶片施加應力,可無晶片破裂等之缺陷地進行拾取,且可縮短拾取步驟時間。本發明係基於該見解而完成者。
亦即,本發明之切割膠帶係在基材樹脂薄膜之至少單側上具有輻射線硬化性之黏著劑層,且將晶圓貼合於前述黏著劑層上並切割前述晶圓之切割膠帶,其特徵為前述黏著劑層係相對於由丙烯酸聚合物、乙酸乙烯酯聚合物及具有碳-碳雙鍵之丙烯酸系聚合物所組成群組選出之1種或2種以上之聚合物100質量份,含0.5~30質量份之鄰苯二甲酸酯類,在23℃、50%RH之條件下,剝離角度90度、剝離速度50mm/min中,與以#2000研磨之矽鏡面晶圓之剝離力,在前述黏著劑層經輻射線硬化前為0.5N/25mm以上,在前述黏著劑層經輻射線硬化後為0.05~0.4N/25mm,且,前述黏著劑層經輻射線硬化後之在23℃、50%RH之條件下,於剝離角度90度、與以#2000研磨之矽鏡面晶圓之剝離力,於將以剝離速度50mm/min之剝離力設為(i),將以1000mm/min之剝離力設為(ii)時,(ii)/(i)為1以下。
且,上述切割膠帶較好前述鄰苯二甲酸酯類
對水之溶解度為0.1mg/L以下。
依據本發明,在切割步驟後之拾取步驟中,不使薄型半導體晶片產生晶片破裂,且可在短時間效率良好地進行拾取。
1‧‧‧切割膠帶
2‧‧‧基材樹脂膜
3‧‧‧黏著劑層
4‧‧‧隔離層
6‧‧‧半導體晶圓
7‧‧‧環框
8‧‧‧吸附台
9‧‧‧切刀
10‧‧‧半導體晶片
11‧‧‧頂起構件
12‧‧‧頂起銷
13‧‧‧吸附治具
圖1係模式性顯示本發明實施形態之切割膠帶之構造之剖面圖。
圖2係模式性顯示使用本發明實施例之切割膠帶的切割步驟之剖面圖。
圖3係模式性顯示使用本發明實施例之切割膠帶的切割步驟之剖面圖。
圖4係模式性顯示使用本發明實施例之切割膠帶之擴展步驟之剖面圖。
圖5係模式性顯示使用本發明實施例之切割膠帶的拾取步驟之剖面圖。
以下,針對本發明之實施形態加以詳細說明。
本發明實施形態之切割膠帶1係在基材樹脂膜2之至少單面側形成至少1層之黏著劑層3。圖1係顯
示本發明之輻射線硬化型之切割膠帶1之較佳實施樣態之概略剖面圖,切割膠帶1具有基材樹脂膜2,且於基材樹脂膜2上形成黏著劑層3。且,於黏著劑層3上形成視需要設置之隔離層4。圖1中雖顯示於基材樹脂膜2之一面上設置黏著劑層3之切割膠帶1,但基材樹脂膜2中,亦可於設置黏著劑層3之另一面上設置黏著劑層(未圖示)。
以下,針對本實施形態之切割膠帶1之各種構成要素加以詳細說明。
(基材樹脂膜2)
作為基材樹脂膜2並無特別限制,可由以往之基材樹脂膜2中適當選擇使用。由於作為黏著劑層3所用之黏著劑係使用輻射線硬化性樹脂,故基材樹脂膜2必須為輻射線可透過以可降低黏著劑層3之黏著力至可拾取切割後被切斷所得之半導體晶片10(參照圖3)之程度。作為所使用之基材樹脂膜2較好為如聚乙烯、聚丙烯、乙烯-丙烯共聚物、及聚丁烯之聚烯烴,如苯乙烯-氫化異戊二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯共聚物、苯乙烯-氫化丁二烯-苯乙烯共聚物及苯乙烯-氫化異戊二烯/丁二烯-苯乙烯共聚物之熱可塑性彈性體,如乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、及乙烯-(甲基)丙烯酸金屬鹽系離子聚合物之乙烯共聚物,聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚碳酸酯、聚甲基丙烯酸甲酯等之工程塑膠、軟質聚氯乙
烯、半硬質聚氯乙烯、聚酯、聚胺基甲酸酯、聚醯胺、聚醯亞胺、天然橡膠以及合成橡膠等之高分子材料。且,亦可為混合由該等群組選出之2種以上而成者或經複層化而成者,可依據與黏著劑層3之接著性任意選擇。
基材樹脂膜2之厚度並無特別限制,較好為10~500μm,更好為40~400μm,最好為70~250μm。
基材樹脂膜2之與黏著劑層3鄰接之面,為了提高密著性,可施以電暈處理,亦可施以底塗等之處理。
(黏著劑層3)
黏著劑層3若為輻射線硬化型之黏著劑層3且具有特定之剝離力,則構成黏著劑層3之樹脂組成物並無特別限制,較好為由聚合物側鏈或主鏈中或主鏈末端具有碳-碳雙鍵之聚合物所成之樹脂組成物,或於一般黏著劑中調配紫外線硬化性之單體成分或寡聚物成分等之紫外線硬化樹脂的樹脂組成物。又,上述樹脂組成物較好具有由胺基甲酸酯丙烯酸酯、環氧丙烯酸酯、聚酯丙烯酸酯、聚醚丙烯酸酯、(甲基)丙烯酸寡聚物、衣康酸寡聚物及乙酸乙烯酯所組成群組選出之至少1種黏著劑作為主成分。
由聚合物側鏈或主鏈中或主鏈末端具有碳-碳雙鍵之聚合物所成之樹脂組成物,係使用含有丙烯酸聚合物(A)及/或乙酸乙烯酯聚合物(B)、與交聯劑(C),及視需要含有光聚合起始劑(D)之黏著劑組成物。再者,本實施
形態中含有鄰苯二甲酸酯類(E)。
(A)丙烯酸聚合物
丙烯酸聚合物(A)列舉為以(甲基)丙烯酸酯成分作為單體主成分(聚合物中之質量%超過50%),且對於該(甲基)丙烯酸酯成分,共聚合有可共聚合之分子內具有羥基之單體(含羥基之單體)成分者等。本說明書中,所謂(甲基)丙烯酸酯包含丙烯酸酯與甲基丙烯酸酯之兩者。
丙烯酸聚合物(A)中,作為單體主成分之(甲基)丙烯酸酯成分列舉為例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷酯、(甲基)丙烯酸十二烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸十四烷酯、(甲基)丙烯酸十五烷酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸十七烷酯、(甲基)丙烯酸十八烷酯等之(甲基)丙烯酸烷酯;(甲基)丙烯酸環己酯等之(甲基)丙烯酸環烷酯;(甲基)丙烯酸苯酯等之(甲基)丙烯酸芳酯等。(甲基)丙烯酸酯可單獨使用或組合2種以上使用。
丙烯酸聚合物(A)較好透過交聯劑(C)之聚異氰
酸酯與胺基甲酸酯鍵,與聚醚多元醇反應,並且藉交聯劑交聯提高質量平均分子量(Mw)。該情況下,丙烯酸聚合物(A)必須對於主鏈鍵結有羥基。對主鏈鍵結有羥基之丙烯酸聚合物(A)可對前述(甲基)丙烯酸酯進行共聚合,且可藉由共聚合具有羥基之單體而得。對(甲基)丙烯酸酯可共聚合且具有羥基之單體列舉為(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、丙三醇單(甲基)丙烯酸酯等。
丙烯酸聚合物(A)中,除了對主鏈鍵結有羥基(經側鏈化)以外,亦可使羧基、縮水甘油基之官能基予以側鏈化。具有羥基以外之官能基之丙烯酸聚合物(A)可藉由共聚合有可對(甲基)丙烯酸酯進行共聚合且具有羥基以外之官能基之單體而得。可對(甲基)丙烯酸酯進行共聚合且具有羧基之單體列舉為(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、衣康酸、馬來酸、富馬酸、巴豆酸、異巴豆酸等。可對(甲基)丙烯酸酯進行共聚合且具有縮水甘油基之單體列舉為(甲基)丙烯酸縮水甘油酯等。
(B)乙酸乙烯酯聚合物
至於乙酸乙烯酯聚合物(B),乙酸乙烯酯聚合物亦可使用僅使乙酸乙烯酯單體聚合而得之均聚物。乙酸乙烯酯聚合物中之與乙酸乙烯酯單體共聚合之單體成分只要不妨礙上述效果者即無特別限制。列舉為例如上述記載之丙烯
酸酯類或月桂基乙烯醚、十八烷基乙烯醚、全氟丙基乙烯醚、2-氯乙基乙烯醚、環己基乙烯醚、甲基乙烯醚等乙烯醚類,辛癸酸乙烯酯(vinyl versatate)、硬脂酸乙烯酯、丙烯醯胺、甲基丙烯醯胺、N,N-二甲基丙烯醯胺、丙烯酸、巴豆酸、馬來酸、富馬酸、衣康酸、乙烯磺酸、丙烯磺酸、甲基丙烯酸二甲胺基乙酯、乙烯基咪唑、乙烯基吡啶、乙烯基琥珀醯亞胺、碳酸伸乙烯酯、烯丙醇、乙酸烯丙酯等。
上述丙烯酸聚合物(A)及乙酸乙烯酯聚合物(B)之合成中,以溶液聚合進行共聚合時之有機溶劑列舉為酮系、酯系、醇系、芳香族系之有機溶劑,其中以甲苯、乙酸乙酯、異丙醇、苯甲基溶纖素、乙基溶纖素、丙酮、甲基乙基酮等之一般丙烯酸系聚合物之良溶劑,且沸點60~120℃之溶劑較佳,至於聚合起始劑通常使用α,α’-偶氮雙異丁腈等偶氮雙腈系、苯甲醯過氧化物等有機過氧化物系等之自由基產生劑。此時,可視需要併用觸媒、聚合抑制劑,藉由調節聚合溫度及聚合時間,且隨後進行官能基之加成反應,可獲得所需分子量之丙烯酸聚合物(A)、乙酸乙烯酯聚合物(B)。且,關於調節分子量,較好使用硫醇、四氯化碳系之溶劑。又,該共聚合並不限於溶液聚合,亦可為塊狀聚合、懸浮聚合等其他方法均無妨。
丙烯酸聚合物(A)及乙酸乙烯酯聚合物(B),就防止半導體晶圓6等被加工物之污染等之觀點而言,以低分子量物之含量較少較佳。就該觀點而言,丙烯酸聚合物
(A)及乙酸乙烯酯聚合物(B)之質量平均分子量(Mw)較好為10萬以上,更好為20萬~200萬。又,丙烯酸聚合物(A)及乙酸乙烯酯聚合物(B)之質量平均分子量(Mw)過小時,對半導體晶圓6等之被加工物之污染防止性降低,質量平均分子量(Mw)過大時,用於形成輻射線硬化性黏著劑層3之黏著劑組成物之黏度變得極高,使切割膠帶1之製造變困難。
丙烯酸聚合物(A)及乙酸乙烯酯聚合物(B),就展現黏著性之觀點而言,玻璃轉移點較好為-70℃~0℃,更好為-65℃~-20℃。玻璃轉移點過小時,丙烯酸聚合物(A)及乙酸乙烯酯聚合物(B)之黏度過低,難以形成穩定之塗膜,玻璃轉移點過高時,黏著劑變得太硬,對被著體之潤濕性惡化。
(C)交聯劑
交聯劑(C)至少使用聚異氰酸酯作為交聯劑,較好在輻射線硬化前交聯。聚異氰酸酯交聯劑若為具有異氰酸酯基之交聯劑即無特別限制。可列舉出例如甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯等或該等之縮脲型、異氰尿酸酯型、加成型、封阻型等多種多聚物等。藉由使用對羥基具有反應性之聚異氰酸酯作為交聯劑,將聚醚多元醇納入交聯構造中成為可能,可防止聚醚多元醇移行到半導體晶圓6表面而污染晶圓6表面。此外,可併用聚異氰酸酯以外之交聯劑作
為交聯劑。但,丙烯酸聚合物(A)或乙酸乙烯酯聚合物(B)中,必須具有對交聯劑具有反應性之官能基。此種交聯劑可自例如環氧系交聯劑、氮丙啶系交聯劑、三聚氰胺樹脂系交聯劑、脲樹脂系交聯劑、酸酐系交聯劑、多元胺系交聯劑、含羧基之聚合物系交聯劑等適當選擇使用。
(D)光聚合起始劑
輻射線硬化性黏著劑層3中,為了在照射輻射線時,有效率地進行分子內具有碳-碳雙鍵之丙烯酸系聚合物(或輻射線硬化性成分)之聚合、硬化,而可含光聚合起始劑。光聚合起始劑列舉為例如苯偶因甲醚、苯偶因乙醚、苯偶因丙醚、苯偶因異丙醚、苯偶因異丁醚等苯偶因烷醚系起始劑;二苯甲酮、苯甲醯基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮、聚乙烯基二苯甲酮等二苯甲酮系起始劑;α-羥基環己基苯基酮、4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙酮-1等芳香族酮系起始劑;苄基二甲基縮酮等芳香族縮酮系起始劑;噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2-乙基噻噸酮、2-異丙基噻噸酮、2-十二烷基噻噸酮、2,4-二氯噻噸酮、2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等之噻噸酮系起始劑;苄基等之苄基系起始劑;苯偶因等之苯偶因系起始劑,以及α-縮酮系化合物(2-甲基-2-羥基苯丙酮等)、芳
香族磺醯氯系化合物(2-萘磺醯氯等)、光活性肟系化合物(1-苯酮-1,1-丙二酮-2-(鄰-乙氧基羰基)肟等)、樟腦醌、鹵化酮、醯基氧化膦、醯基膦酸酯等。光聚合起始劑可單獨使用或組合2種以上使用。
光聚合起始劑之調配量相對於丙烯酸聚合物(A)或乙酸乙烯酯聚合物(B)100質量份可自0.5~30質量份,較好自1~20質量份之範圍適當選擇。
(E)鄰苯二甲酸酯類
鄰苯二甲酸酯類(E)列舉為例如鄰苯二甲酸二甲酯、鄰苯二甲酸二乙酯、鄰苯二甲酸二烯丙酯、鄰苯二甲酸二丁酯、鄰苯二甲酸二正己酯、鄰苯二甲酸二辛酯、鄰苯二甲酸二正辛酯、鄰苯二甲酸二異壬酯、鄰苯二甲酸二壬酯、鄰苯二甲酸二異癸酯、鄰苯二甲酸丁酯苄酯等,但以與黏著劑之相溶性良好,且對水之溶解性低之鄰苯二甲酸二辛酯、鄰苯二甲酸二正辛酯、鄰苯二甲酸二異壬酯、鄰苯二甲酸二壬酯較佳。其原因為若與黏著劑之相溶性差,則有容易因滲出而析出於表面,成為污染源因之虞,並且無法安定地製造。且,原因為若對水之溶解性高則會溶解於切割時之切削水中,有成為晶圓6表面污染原因之虞。對水之溶解性之範圍為0mg/L以上0.1mg/L以下,較好為0mg/L以上0.05mg/L以下。
本實施形態中,由於黏著劑層3含有鄰苯二甲酸酯類(E),故柔軟性優異,可抑制切割時晶片飛散,
照射輻射線使黏著劑層3硬化後,不隨剝離速度而異,而使剝離力成為一定以下,故可良好地抑制晶片破裂且可容易地拾取半導體晶片10。其效果在晶圓6剛研磨後,例如,於研磨結束後1小時以內,於未全面形成自然氧化膜狀態之不安定晶圓6研削面上貼合切割膠帶1時尤其顯著展現。
鄰苯二甲酸酯類之調配量相對於丙烯酸聚合物(A)或乙酸乙烯酯聚合物(B)100質量份可自0.5~30質量份,較好1~20質量份,更好5~10質量份之範圍適當選擇。添加量少時無法展現效果,過多時與因黏著劑之相溶性惡化而滲出並成為污染之原因。
(F)其他調配劑
用於形成黏著劑層3之黏著劑組成物中,亦可視需要含有例如黏著賦予劑、抗老化劑、填充劑、著色劑、難燃劑、抗靜電劑、軟化劑、紫外線吸收劑、抗氧化劑、可塑劑、界面活性劑等習知添加劑等。
又,上述黏著劑組成物中,代替丙烯酸聚合物(A)及/或乙酸乙烯酯聚合物(B),亦可藉由調製含有官能基之丙烯酸系聚合物後,使含有可與含有官能基之丙烯酸系聚合物中之官能基反應之官能基與碳-碳雙鍵之化合物在維持碳-碳雙鍵之輻射線硬化性(輻射線聚合性)之狀態下,對含有官能基之丙烯酸系聚合物進行縮合反應或加成反應,而使用分子內具有碳-碳雙鍵之丙烯酸系聚合物(A2)
。含有官能基之丙烯酸系聚合物可使用上述丙烯酸聚合物(A)。且,亦可併用丙烯酸聚合物(A)及/或乙酸乙烯酯聚合物(B)與分子內具有碳-碳雙鍵之丙烯酸系聚合物(A2)。
作為具有可與含有官能基之丙烯酸系聚合物中之官能基反應之官能基與碳-碳雙鍵之化合物,於成為反應對象之側鏈係羧基或酸酐之情況,列舉為(甲基)丙烯酸縮水甘油酯等,於成為反應對象之側鏈係環氧基之情況列舉為(甲基)丙烯酸等,於成為反應對象之側鏈係羥基之情況,列舉為(甲基)丙烯酸2-異氰酸酯基烷酯等。
且,對含有官能基之丙烯酸系聚合物進行具有官能基及碳-碳雙鍵之化合物之縮合反應或加成反應時,藉由使用觸媒可有效地進行前述反應。此種觸媒並無特別限制,但以錫系觸媒(尤其是二月桂酸二丁基錫)較佳。觸媒之使用量並無特別限制,例如相對於含有官能基之丙烯酸系聚合物100質量份較好為0.05~1質量份左右。
黏著劑層3可利用以往之黏著劑層3之形成方法形成。例如,可藉由將上述黏著劑組成物塗佈於基材樹脂膜2之特定面上而形成之方法,或將上述黏著劑組成物塗佈於隔離層(例如,已塗佈脫模劑之塑膠製薄膜或薄片等)上形成黏著劑層3後,將該黏著劑層3轉印於基材之特定面上之方法,藉此於基材樹脂膜2上形成黏著劑層3。又,黏著劑層3可具有單層之形態,亦可具有層合之形態。
至於黏著劑層3之厚度並無特別限制,但較
好為3~20μm。黏著劑層3之厚度太薄時,會有切割時被加工物容易剝離,故無法保持經切斷加工之半導體晶片10,而發生晶片飛散之情況。黏著劑層3太厚時,切割半導體晶圓6時產生之振動的振動幅度變大,而發生稱為切屑之缺陷,或者,會有切割時捲起之黏著劑層附著於晶片之側面或表面,而污染晶片之情況。
(隔離層4)
隔離層4係為保護黏著劑層3、為了容易進行將切割膠帶1切斷成特定形狀之標記加工之目地、或為了使黏著劑平滑之目地,而視需要設置者。隔離層4之構成材料列舉為紙、聚乙烯、聚丙烯、聚對苯二甲酸乙二酯等合成樹脂膜等。隔離層4之表面為提高自黏著劑層3之剝離性,故亦可視需要施以聚矽氧處理、長鏈烷基處理、氟處理等之剝離處理。且,亦可視需要施以抗紫外線處理,以免黏著薄片因周圍紫外線而產生反應。隔離層4之厚度通常為10~100μm,較好為25~50μm左右。
本發明實施形態之切割膠帶1在23℃、50%RH之條件下,將以#2000研磨之矽鏡面貼合於黏著劑層3後,在23℃、50%RH之條件下經過1小時後,於黏著劑層3輻射線硬化前之剝離力(對矽鏡面,剝離角度:90°,剝離速度:50mm/min,在23℃ 50%RH之條件下)為0.5N/25mm以上,較好為10N/25mm以下,更好為2N/25mm以下。具有該範圍之黏著力的切割膠帶1在切割
時可有效地保持經切斷加工之半導體晶片10,可發揮防止晶片飛散或切割粉塵侵入到半導體晶片10背面之效果。
又,與上述同樣測定,使黏著劑層3輻射線硬化後之剝離力(對矽鏡面,剝離角度:90°,剝離速度:50mm/min,在23℃ 50%RH之條件下)為0.05~0.4N/25mm,較好為0.1~0.3N/25mm,更好為0.1~0.2N/25mm。該剝離力超過0.4N/25mm時,拾取時於黏著劑層3與半導體晶圓6(參照圖2)之界面的剝離困難,無法拾取,或者假定可拾取亦會有半導體晶圓6破裂之虞。且,相反地剝離力低如0.05N/25mm以下時,拾取時會有鄰接之半導體晶片10(參照圖4)飛散之虞。
再者,設為剝離速度1000mm/min,與上述同樣測定,使黏著劑層3輻射線硬化後之剝離力(對矽鏡面,剝離角度:90°,在23℃ 50%RH之條件下)為0.4N/25mm以下。且,針對使上述黏著劑層3輻射線硬化後之剝離力,將剝離速度50mm/min之剝離力設為(i),將1000mm/min之剝離力設為(ii)時,(ii)/(i)為1以下,較好為0.9以下,更好為0.8以下。該比超過1時,於拾取時頂起銷12(參照圖5)之頂起速度慢之情況,由於剝離力低故對於拾取沒有妨礙,但於頂起速度快時,由於剝離力變高,會有尤其於薄膜之半導體晶圓6中發生晶片破裂等之缺陷之虞。且,(ii)/(i)之值較好為0.2以上。
〈使用方法〉
接著,針對本發明之切割膠帶1之使用方法加以說明。
本發明之切割膠帶1在對被切斷物的半導體零件貼附之安裝步驟後,依循常用方法供於切割步驟,進而移到輻射線照射步驟、拾取步驟。半導體零件列舉為矽半導體、化合物半導體、半導體封裝、玻璃、陶瓷等。
安裝步驟通常可在半導體晶圓6之背面研削步驟、或半導體晶圓6之背面研削步驟後接續進行之破碎層去除步驟等之後,連續(剛進行半導體晶圓6之背面研削步驟或破碎層去除步驟之後)或者短期間內(半導體晶圓6之背面研削步驟或破碎層去除步驟結束後數小時以內)實施。
安裝步驟係如圖2所示,通常使半導體晶圓6等的被加工物與切割膠帶1,以被加工物之研削面與黏著劑層3接觸之形態重疊,邊藉由使用未圖示之壓著輥之按壓機構等之以往按壓機構按壓,邊進行被加工物與切割膠帶1之貼附。且,將各步驟中用於保持切割膠帶1之環框7貼附於黏著劑層3之與被加工物(半導體晶圓6)之貼合位置更外側。
切割步驟係如圖3所示,將貼附有被切斷體之切割膠帶1載置於吸附台8上,使切刀9高速旋轉,將被切斷體切斷成特定尺寸。切割可採用進行切入到切割膠帶1之一部分之稱為全切割之切斷方式等。切割後,利用輻射線最好為紫外線之照射使黏著劑層3硬化,使黏著性
降低,可容易地進行自切割膠帶1切割半導體晶片10等之切斷片。
輻射線,最好於紫外線照射後,供於拾取步驟。拾取步驟係如圖4所示,可設置擴展步驟。擴展步驟係藉由使圓筒狀之頂起構件11自切割膠帶1之下方,以突抵於環框7與切斷片間之方式上升,而使切割膠帶1朝周圍方向及徑方向拉伸。拾取方法並無特別限制,可採用以往各種拾取方法。列舉為例如,如圖5所示,使各切斷片(半導體晶片10)自切割膠帶1之下方藉由頂起銷12頂起,以吸附治具13等拾取裝置拾取被頂起之切斷片(半導體晶片10)之方法等。
接著基於實施例更詳細說明本發明。以下以實施例說明本發明,但本發明並不受限於該等實施例。
(實施例1)
以質量比7:2:1之比例,使丙烯酸乙酯及丙烯酸丁酯、丙烯酸2-羥基乙酯,在乙酸乙酯中以常用方法共聚合,獲得含有對主鏈鍵結有羥基之丙烯酸聚合物(A)之溶液(含丙烯酸共聚物之溶液Aa)。接著,對該丙烯酸聚合物(A)100質量份添加5質量份之鄰苯二甲酸二辛酯、30質量份之作為輻射線硬化劑之商品名「UV3000」(日本合成化學工業股份有限公司製)、2.5質量份之作為光聚合起始劑之商品名「Irgacure 651」(BASF公司製)、1質量份之作為交聯劑之聚異氰酸酯系化合物(商品名「Coronate L」,日
本聚胺基甲酸酯工業股份有限公司製),獲得紫外線硬化型丙烯酸系黏著劑溶液X1。
使用於單面施以電暈放電處理之低密度聚乙烯製膜(厚度:100μm)作為基材樹脂膜,將前述紫外線硬化型丙烯酸系黏著劑溶液X1塗佈於電暈放電處理面上,在80℃加熱10分鐘,進行加熱交聯。藉此,於基材樹脂膜上形成作為輻射線硬化型之黏著劑層的紫外線硬化型黏著劑層(厚度:10μm)。接著,將隔離層貼合於該紫外線硬化型黏著劑層表面,製作實施例1之紫外線硬化型之切割膠帶。
(實施例2)
除了將鄰苯二甲酸二辛酯設為0.5質量份以外,餘與實施例1同樣,製作實施例2之紫外線硬化型切割膠帶。
(實施例3)
除了將鄰苯二甲酸二辛酯設為30質量份以外,餘與實施例1同樣,製作實施例3之紫外線硬化型之切割膠帶。
(實施例4)
除了添加5質量份之鄰苯二甲酸二異壬酯替代鄰苯二甲酸二辛酯以外,餘與實施例1同樣,製作實施例4之紫外線硬化型之切割膠帶。
(實施例5)
除了添加5質量份之鄰苯二甲酸二丁酯替代鄰苯二甲酸二辛酯以外,餘與實施例1同樣,製作實施例5之紫外線硬化型之切割膠帶。
(實施例6)
在乙酸乙酯中以常用方法使乙酸乙烯酯聚合,獲得含乙酸乙烯酯聚合物(B)之溶液(含乙酸乙烯酯聚合物之溶液Ba)。接著,對該乙酸乙烯酯聚合物(B)(聚乙酸乙烯酯)100質量份添加5質量份之鄰苯二甲酸二辛酯、30質量份之作為輻射線硬化劑之商品名「UV3000」(日本合成化學工業股份有限公司製)、2.5質量份之作為光聚合起始劑之商品名「Irgacure 651」(BASF公司製)、1質量份之作為交聯劑之聚異氰酸酯系化合物(商品名「Coronate L」,日本聚胺基甲酸酯工業股份有限公司製),獲得紫外線硬化型乙酸乙烯酯系黏著劑溶液X2。
隨後,與實施例1同樣,於基材樹脂膜上形成紫外線硬化型黏著劑,且將隔離層貼合於紫外線硬化型黏著劑層之表面,製作實施例6之紫外線硬化型之切割膠帶。
(實施例7)
以質量比8:2之比例,使作為單體成分之丙烯酸2-乙基己酯與丙烯酸2-羥基乙酯在乙酸乙酯中共聚合,獲得
含有對主鏈鍵結有羥基之丙烯酸聚合物(A)之溶液(含丙烯酸共聚物之溶液Ab)。接著,於前述含丙烯酸共聚物之溶液Ab中添加作為具有光聚合性碳-碳雙鍵及官能基之化合物的2-甲基丙烯醯氧基乙基異氰酸酯,且添加作為觸媒之二月桂酸二丁基錫,在50℃反應24小時,獲得含有側鏈之末端具有碳-碳雙鍵之丙烯酸系聚合物(A2)之溶液(含丙烯酸共聚物之溶液A2b)。該側鏈之末端具有碳-碳雙鍵之丙烯酸系聚合物(A2)之羥基價以JIS K 0070所記載之利用吡啶-乙酸酐之乙炔化法測定後為9.8mgKOH/g。接著,對上述側鏈之末端具有碳-碳雙鍵之丙烯酸系聚合物(A2)100質量份添加5質量份之鄰苯二甲酸二辛酯、2.5質量份之作為光聚合起始劑之商品名「Irgacure 651」(BASF公司製)、1質量份之聚異氰酸酯系化合物(商品名「Coronate L」,日本聚胺基甲酸酯工業股份有限公司製),獲得紫外線硬化型丙烯酸系黏著劑溶液X3。
使用單面施以電暈放電處理之低密度聚乙烯製膜(厚度:100μm)作為基材樹脂膜,將前述紫外線硬化型丙烯酸系黏著劑溶液X3塗佈於電暈放電處理面上,在80℃加熱10分鐘,進行加熱交聯。藉此,於基材樹脂膜上形成作為輻射線硬化型之黏著劑層的紫外線硬化型黏著劑層(厚度:10μm)。接著,將隔離層貼合於該紫外線硬化型黏著劑層之表面,製作實施例7之紫外線硬化型之切割膠帶。
(比較例1)
除了未添加鄰苯二甲酸二辛酯以外,餘與實施例1同樣,製作比較例1之紫外線硬化型之切割膠帶。
(比較例2)
除了將鄰苯二甲酸二辛酯設為0.45質量份以外,餘與實施例1同樣,製作比較例2之紫外線硬化型之切割膠帶。
(比較例3)
除了將鄰苯二甲酸二辛酯設為35質量份以外,餘與實施例1同樣,製作比較例3之紫外線硬化型之切割膠帶。
(比較例4)
除了未添加鄰苯二甲酸二辛酯以外,餘與實施例6同樣,製作比較例4之紫外線硬化型之切割膠帶。
(比較例5)
除了未添加鄰苯二甲酸二辛酯以外,餘與實施例7同樣,製作比較例5之紫外線硬化型之切割膠帶。
〈相溶性〉
針對實施例1~7及比較例2、3之製作時所調配之各紫外線硬化型丙烯酸系黏著劑溶液,以目視評價鄰苯二甲
酸酯之相溶性。經過10小時後仍維持透明狀態者記為◎,經過7小時後為不透明者記為○,經過3小時後為不透明者記為△,超過1小時後為不透明者記為×。結果示於表1及表2。
〈剝離力〉
(1)輻射線硬化前之剝離力
針對實施例1~7及比較例1~5所得之切割膠帶,在23℃、50%RH之條件下,貼附於以#2000研磨之矽鏡面晶圓之鏡面上。在23℃、50%RH之條件下經過1小時後,測定黏著劑層經輻射線硬化前之剝離力(對矽鏡面,剝離角度:90°,剝離速度:50mm/min,23℃、50% RH)。結果示於表1及表2。又,各種剝離力係依據JIS Z 0237測定。
(2)輻射線硬化後之剝離力
針對實施例1~7及比較例1~5所得之切割膠帶,在23℃、50%RH之條件下,貼附於以#2000研磨之矽鏡面晶圓之鏡面上。在23℃、50%RH之條件下經過1小時後,自切割膠帶背面照射200mJ/cm2之紫外線,測定使黏著劑層輻射線硬化後之剝離力(對矽鏡面,剝離角度:90°,剝離速度:分別為50mm/min及1000mm/min,23℃、50% RH)。分別算出上述拉伸速度1000mm/min下之剝離力(ii)相對於拉伸速度50mm/min下之剝離力(i)之比((ii)/(i))。
該等結果示於表1及表2。
〈拾取性〉
針對實施例1~7及比較例1~5所得之切割膠帶,根據以下順序進行試驗,針對拾取性進行評價。
(1)以2軸研削8吋矽晶圓之背面30μm後,研削至矽晶圓之最終厚度成為50μm或300μm。研削條件如下述。
(研磨條件)
研磨機:DISCO股份有限公司製,商品名「DFG-840」
1軸:#600研磨石(轉數:4800rpm,下降速度:P1:3.0μm/sec,P2:2.0μm/sec)
2軸:#200研磨石(轉數:5500rpm,下降速度:P1:0.8μm/sec,P2:0.6μm/sec)
(2)於(1)之研削結束後5分鐘以內,將各例之切割膠帶黏著於前述(1)所得之半導體晶圓之研削面上,並且以環框固定。
(3)使用切割裝置,以下述切割條件,將(2)中以環框固定之半導體晶圓沿著設定之分割預定線進行全切割。
(切割條件1:矽晶圓300μm厚)
切片機:DISCO股份有限公司製,商品名「DFD-340」
切刀:DISCO股份有限公司製,商品名「27 HEEE」
切刀轉數:40000rpm
切割速度:100mm/sec
切割深度:25μm
切割模式:下切
切割尺寸:5.0×5.0mm
(切割條件2:矽晶圓50μm厚)
切片機:DISCO股份有限公司製,商品名「DFD-340」
切刀:DISCO股份有限公司製,商品名「27 HECC」
切刀轉數:40000rpm
切割速度:100mm/sec
切割深度:25μm
切割模式:下切
切割尺寸:15.0×10.0mm
(4)自黏著切割膠帶後經過7天後,自切割膠帶之基材樹脂膜側照射200mJ/cm2之紫外線,使黏著層硬化後,使用拾取裝置拾取已單片化之半導體晶片。以下述拾取條件任意拾取50個半導體晶片,計算在不產生晶片破裂或晶片飛散而成功拾取之半導體晶片數,評價拾取成功率。其結果示於表1及表2。又,拾取成功率為90%以上者可判定為合格。
(拾取條件1:矽晶圓300μm厚)
黏晶機:CANON Mechinery股份有限公司製「CAP-300II」
銷數:4根
銷之間隔:3.8×3.8mm
銷尖端曲率:0.25mm
銷頂起量:0.40mm
銷頂起速度:50mm/min
銷頂起保持時間:1000ms
(拾取條件2:矽晶圓50μm厚)
黏晶機:CANON Mechinery股份有限公司製「CAP-300II」
銷數:4根
銷之間隔:7.8×7.8mm
銷尖端曲率:0.25mm
銷頂起量:0.40mm
銷頂起速度:800mm/min
銷頂起保持時間:100ms
〈晶圓表面污染性〉
利用XPS(X-射線光電子光譜儀,X射線光電子分光分析),以下述測定條件測定上述經拾取之晶片之與切割膠帶貼合之面,與未與切割膠帶貼合之晶圓比較源自切割膠帶之污染物的碳增加量,以mol%算出。其結果示於表
1及表2。碳增加量未達5mol%為優良品以◎表示,5~未達10mol%為良品以○表示,10~未達30mol%為可接受品以△表示,30mol%以上為不良品以×表示
(測定條件)
X射線源:MgKα
X射線:出射角45°
測定面積:1.1mm
如表1所示,在23℃、50%RH之條件下,剝離角度90度、剝離速度50mm/min中之與以#2000研磨之矽鏡面晶圓之剝離力,在前述黏著劑層經輻射線硬化前為0.5N/25mm以上,在前述黏著劑層經輻射線硬化後為0.05~0.4N/25mm,且前述黏著劑層經輻射線硬化後之在23℃、50%RH之條件下,剝離角度90度之與以#2000研磨之矽鏡面晶圓之剝離力,在剝離速度50mm/min下之剝離力設為(i),在1000mm/min下之剝離力設為(ii)時,(ii)/(i)為1以下之實施例1~7之切割膠帶,拾取性在拾取條件1、2均獲得良好之結果。亦即,薄型半導體晶片之晶片破裂或晶片飛散被良好地抑制,可在短時間效率良好地拾取。
相對於此,如表2所示,上述(ii)/(i)超過1之比較例1、2、4、5之切割膠帶,於拾取條件1之拾取性雖為良好結果,但於拾取條件2則成為拾取性差之結果。亦即,在以往之厚的半導體晶圓雖可沒問題地拾取,但於薄型的半導體晶圓時,以快速頂起速度使銷頂起進行拾取時,成為黏著劑層與半導體晶片間之剝離力變大而使晶片破裂之結果。另外,上述(ii)/(i)為1以下,但上述剝離速度50mm/min下之黏著層經輻射線硬化前之剝離力未達0.5N/25mm,黏著劑層經輻射線硬化後之剝離力未達0.05N/25mm之比較例3,在拾取條件1、2進行拾取時雖均不產生晶片破裂,但拾取時鄰接之晶片飛散而發生許多晶片飛散,故為拾取性差之結果。
又,相對於丙烯酸聚合物(A)100質量份含多於30質量份之鄰苯二甲酸酯類之比較例3,與黏著劑之相溶性差,相較於添加量為0.5~30質量份之情況,成為晶圓污染性稍差之結果。且,添加鄰苯二甲酸二壬酯之實施例4,與添加其他鄰苯二甲酸酯類之情況相比,成為相溶性較差之結果,但實際使用上並無問題。添加對水之溶解性超過0.1mg/L之鄰苯二甲酸二丁酯之實施例5,其切割時之切削水會使鄰苯二甲酸二丁酯溶解,而使晶圓表面污染性變差,但為容許範圍。
1‧‧‧切割膠帶
2‧‧‧基材樹脂膜
3‧‧‧黏著劑層
4‧‧‧隔離層
Claims (2)
- 一種切割膠帶,其係在基材樹脂薄膜之至少單側上具有輻射線硬化性之黏著劑層,且將晶圓貼合於前述黏著劑層上並切割前述晶圓之切割膠帶,其特徵為前述黏著劑層係相對於由丙烯酸聚合物、乙酸乙烯酯聚合物及具有碳-碳雙鍵之丙烯酸系聚合物所組成群組選出之1種或2種以上之聚合物100質量份,含0.5~30質量份之鄰苯二甲酸酯類,在23℃、50%RH之條件下,剝離角度90度、剝離速度50mm/min中,與以#2000研磨之矽鏡面晶圓之剝離力,在前述黏著劑層經輻射線硬化前為0.5N/25mm以上,在前述黏著劑層經輻射線硬化後為0.05~0.4N/25mm,且,前述黏著劑層經輻射線硬化後之在23℃、50%RH之條件下,於剝離角度90度、與以#2000研磨之矽鏡面晶圓之剝離力,於將以剝離速度50mm/min之剝離力設為(i),將以1000mm/min之剝離力設為(ii)時,(ii)/(i)為1以下。
- 如請求項1之切割膠帶,其中前述鄰苯二甲酸酯類對水之溶解度為0.1mg/L以下。
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TWI770000B (zh) * | 2016-03-29 | 2022-07-11 | 日商琳得科股份有限公司 | 玻璃切割用黏著板片及其製造方法 |
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JP6623098B2 (ja) * | 2016-03-29 | 2019-12-18 | リンテック株式会社 | ガラスダイシング用粘着シートおよびその製造方法 |
JP6745136B2 (ja) * | 2016-05-16 | 2020-08-26 | 株式会社アルバック | 電子部品の製造方法および処理システム |
KR101877897B1 (ko) * | 2017-03-06 | 2018-07-12 | 엘비세미콘 주식회사 | 범프 구조체의 제조방법 |
JP7041476B2 (ja) * | 2017-07-04 | 2022-03-24 | 日東電工株式会社 | ダイシングテープおよびダイシングダイボンドフィルム |
JP6566324B2 (ja) | 2017-09-29 | 2019-08-28 | サイデン化学株式会社 | 粘着シート |
JP7224231B2 (ja) * | 2019-04-17 | 2023-02-17 | 日東電工株式会社 | ダイシングダイボンドフィルム |
KR20240016939A (ko) * | 2021-06-02 | 2024-02-06 | 가부시끼가이샤 레조낙 | 반도체 장치의 제조 방법 및 다이싱·다이본딩 일체형 필름 |
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JP2726350B2 (ja) * | 1992-02-24 | 1998-03-11 | リンテック株式会社 | ウェハ貼着用粘着シート |
JP2002373871A (ja) * | 2001-06-15 | 2002-12-26 | Sekisui Chem Co Ltd | Icチップの製造方法 |
JP4913584B2 (ja) * | 2006-03-27 | 2012-04-11 | 古河電気工業株式会社 | ウェハ加工方法及びそれに用いるウェハ加工用テープ |
JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
JP4931519B2 (ja) * | 2006-09-01 | 2012-05-16 | 日東電工株式会社 | 活性面貼付ダイシング用粘着テープ又はシートおよび被加工物の切断片のピックアップ方法 |
JP2010260893A (ja) * | 2009-04-30 | 2010-11-18 | Nitto Denko Corp | 積層フィルム及び半導体装置の製造方法 |
JP2011089009A (ja) * | 2009-10-22 | 2011-05-06 | Hitachi Maxell Ltd | 放射線硬化性粘着剤組成物、それを用いたダイシング用粘着フィルム、及び切断片の製造方法 |
JP5406110B2 (ja) * | 2010-04-20 | 2014-02-05 | 日東電工株式会社 | 半導体ウエハ加工用粘着シート |
CN101906278A (zh) * | 2010-08-12 | 2010-12-08 | 华南理工大学 | 一种单组份醋酸乙烯酯粘合剂及其制备方法 |
JP5803123B2 (ja) * | 2011-02-08 | 2015-11-04 | 日立化成株式会社 | 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法 |
JP5899622B2 (ja) * | 2011-02-08 | 2016-04-06 | 日立化成株式会社 | 半導体用粘接着シート、半導体用粘接着シートの製造方法、半導体ウエハ、半導体装置及び半導体装置の製造方法 |
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TWI726973B (zh) * | 2016-03-29 | 2021-05-11 | 日商琳得科股份有限公司 | 玻璃切割用黏著板片及其製造方法 |
TWI770000B (zh) * | 2016-03-29 | 2022-07-11 | 日商琳得科股份有限公司 | 玻璃切割用黏著板片及其製造方法 |
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JP5294366B1 (ja) | 2013-09-18 |
KR101470802B1 (ko) | 2014-12-08 |
CN104756235B (zh) | 2017-05-24 |
MY178666A (en) | 2020-10-20 |
CN104756235A (zh) | 2015-07-01 |
KR20140097591A (ko) | 2014-08-06 |
TWI506118B (zh) | 2015-11-01 |
WO2014061629A1 (ja) | 2014-04-24 |
JP2014082414A (ja) | 2014-05-08 |
SG11201502324TA (en) | 2015-05-28 |
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