WO2014034410A1 - Source d'évaporation - Google Patents

Source d'évaporation Download PDF

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Publication number
WO2014034410A1
WO2014034410A1 PCT/JP2013/071621 JP2013071621W WO2014034410A1 WO 2014034410 A1 WO2014034410 A1 WO 2014034410A1 JP 2013071621 W JP2013071621 W JP 2013071621W WO 2014034410 A1 WO2014034410 A1 WO 2014034410A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
vapor deposition
evaporation source
deposition material
evaporation
Prior art date
Application number
PCT/JP2013/071621
Other languages
English (en)
Japanese (ja)
Inventor
喜成 近藤
尚人 山田
義仁 小林
佐藤　聡
松本　栄一
Original Assignee
キヤノントッキ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノントッキ株式会社 filed Critical キヤノントッキ株式会社
Priority to CN201380044630.2A priority Critical patent/CN104603321B/zh
Priority to KR1020157007556A priority patent/KR102049629B1/ko
Publication of WO2014034410A1 publication Critical patent/WO2014034410A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • the present invention relates to an evaporation source.
  • the temperature distribution of the crucible needs to be uniform. This is because the vapor deposition material in the crucible receives heat conduction and radiation from the crucible.
  • a factor that deteriorates the temperature distribution of the crucible is that the crucible comes into contact with other members. For example, when the crucible is installed, if the bottom surface of the crucible comes into contact with the evaporation source holder or the insulator, the temperature of only the contact portion decreases. Furthermore, since the contact thermal resistance changes depending on the contact state with the evaporation source holder and insulator, the temperature changes variously.
  • Patent Document 1 a technique disclosed in Patent Document 1 has been proposed.
  • the technique disclosed in Patent Document 1 is provided with legs on the bottom surface of the crucible housed in the outer box to be heated, and by providing a gap between the bottom surface of the crucible and the floor surface of the outer box, It is intended to mitigate thermal fluctuation due to contact.
  • the present invention has been made in view of the above situation, and supports the crucible on the outer surface of the crucible at a position higher than the filling surface of the vapor deposition material, so that the outer bottom surface of the crucible is the inner bottom surface of the container.
  • the crucible can be housed in the container in a state of being separated from the container, and the contact portion of the crucible with the container can be located away from the vapor deposition material, so that the influence of thermal fluctuation due to contact is not easily transmitted to the vapor deposition material.
  • An object of the present invention is to provide an evaporation source capable of making the temperature distribution of the vapor deposition material uniform and stabilizing the evaporation amount of the vapor deposition material.
  • An evaporation source comprising a crucible 2 filled with a vapor deposition material 1, a heating unit 3 provided so as to surround the crucible 2, and a storage body 4 for storing and arranging the crucible 2 and the heating unit 3.
  • a crucible support portion 6 is provided on the outer surface of the crucible 2 at a position higher than the filling surface 1 a of the vapor deposition material 1 and lower than the opening position of the crucible 2, and a crucible support portion 6 provided inside the storage body 4.
  • the contact point between the crucible receiving part 5 and the crucible support part 6 is provided on the crucible 2 side with respect to the heating part 3 according to the evaporation source according to claim 1.
  • the evaporation source according to any one of claims 1 and 2, wherein a plurality of openings 7 through which the vapor deposition material 1 passes are provided along the longitudinal direction.
  • the crucible receiving part 5 and the crucible support part 6 are provided in plural, respectively, and the evaporation source according to any one of claims 1 and 2, characterized in that.
  • the said crucible receiving part 5 and the said crucible support part 6 were comprised so that it might be heated by the said heating part 3, It concerns on the evaporation source of any one of Claims 1 and 2 characterized by the above-mentioned. It is.
  • a projecting portion 8 is provided on the outer surface of the crucible 2 so as to project toward the inner surface of the housing body 4, and the crucible receiving portion 5 is provided on the projecting portion 8. It concerns on the evaporation source of any one of these.
  • the crucible 2 is formed by bringing a plurality of divided bodies 2a and 2b into contact with each other, and a seal member 9 is provided at a contact portion between the divided bodies 2a and 2b. 2.
  • the evaporation source according to any one of 2 above.
  • the evaporation source according to any one of claims 1 and 2, further comprising a temperature adjusting mechanism for the crucible receiving part 5 and the crucible support part 6.
  • the crucible support section 6 is the heating section 3, and relates to the evaporation source according to any one of claims 1 and 2.
  • the evaporation source according to any one of claims 1 and 2, wherein a heat reflecting member is provided between the housing 4 and the heating unit 3.
  • the present invention is configured as described above, the influence of thermal fluctuation due to contact is hardly transmitted to the vapor deposition material, the temperature distribution of the vapor deposition material can be made uniform, and the evaporation amount of the vapor deposition material can be stabilized. Become.
  • FIG. 1 is a schematic explanatory cross-sectional view of Example 1.
  • FIG. 1 is a schematic explanatory perspective view of a main part of Example 1.
  • FIG. 3 is a schematic cross-sectional view of Example 2.
  • FIG. 10 is a schematic explanatory perspective view of a main part of Example 2.
  • FIG. 6 is a schematic explanatory cross-sectional view of another example of Embodiment 2.
  • FIG. 10 is a schematic explanatory perspective view of a main part of another example of the second embodiment.
  • the crucible 2 is heated by the heating unit 3 to evaporate the vapor deposition material 1, and vapor deposition is performed on an object to be deposited such as a substrate.
  • the outer bottom surface of the crucible 2 and the inner bottom surface of the housing 4 that accommodates the crucible 2 are not in contact with each other, and the crucible receiving portion 5 is provided at a position higher than the filling surface 1 a of the vapor deposition material 1.
  • the influence of the thermal fluctuation by the contact with the container 4 of the crucible 2 to the vapor deposition material 1 can be made as small as possible.
  • the temperature distribution of the crucible 2 can be made uniform by the heating unit 3 and the temperature distribution of the vapor deposition material 1 filled in the crucible 2 can be made uniform, and the evaporation amount of the vapor deposition material can be stabilized. It will be.
  • a so-called line source in which a plurality of openings 7 through which the vapor deposition material 1 passes is provided along the longitudinal direction, a so-called line source, the evaporation amount of the vapor deposition material 1 is uniform regardless of the position in the crucible 2. Therefore, it is possible to form a film with a uniform film thickness distribution.
  • the crucible receiving part 5 and the crucible support part 6 are positioned lower than the opening, contamination by the vapor deposition material 1 can be avoided.
  • the first embodiment includes a crucible 2 filled with a vapor deposition material 1, a heating unit 3 provided so as to surround the crucible 2, and a storage body 4 that stores and arranges the crucible 2 and the heating unit 3.
  • a crucible receiving portion 5 is provided on the outer surface of the crucible 2 and higher than the filling surface 1 a of the vapor deposition material 1 and lower than the opening position of the crucible 2, and is provided inside the storage body 4.
  • the crucible support part 6 supports the crucible receiving part 5 so that the crucible 2 can be accommodated in the accommodating body 4 with the outer bottom surface of the crucible 2 being separated from the inner bottom surface of the accommodating body 4. It is configured.
  • Example 1 is an evaporation source having a cylindrical crucible 2, and faces a deposition object such as a substrate in a vacuum chamber equipped with an exhaust mechanism. It is provided in the state.
  • the crucible 2 is made of titanium, and a circular opening 7 is provided on the upper end surface thereof. Not only titanium but also other materials such as tantalum, molybdenum or tungsten may be used.
  • the crucible 2 of the first embodiment is configured by abutting and connecting divided bodies 2a and 2b divided in the vertical direction. Specifically, a male screw part and a female screw part are respectively provided in the divided bodies 2a and 2b, and these are screwed together. Therefore, when filling the crucible 2 with the vapor deposition material 1, the divided bodies 2 a and 2 b can be separated and the vapor deposition material 1 can be directly filled into the bottom of the crucible 2 without the opening 7.
  • the vapor deposition material 1 is generally in the form of a powder or granule.
  • the exposed surface (upper end surface) when the vapor deposition material 1 is filled in the crucible 2 is used as the filling surface 1a.
  • the storage body 4 is a cylindrical body made of stainless steel and opened at the top, and a crucible support portion 6 projects from the inner surface.
  • the material is not limited to stainless steel but may be aluminum.
  • the crucible support portion 6 is in the shape of a square bar, supports the crucible receiving portion 5 provided on the outer surface of the crucible 2, and is formed of a material having low thermal conductivity such as ceramics.
  • a concave portion is provided on the outer surface of the crucible 2 at a position higher than the filling surface 1 a of the vapor deposition material 1 and lower than the opening position of the crucible 2, and this is used as the crucible receiving portion 5.
  • a plurality of recesses are provided at the same height position at the lower end of the upper divided body 2 b and are supported by the crucible support portion 6. Yes.
  • the crucible 2 can be supported more stably by adopting a configuration in which it is supported at a plurality of positions. Even if only one pair of the crucible support portion 6 and the crucible support portion 5 is provided and the cantilever support structure is provided at one place of the crucible support portion 6, the function of supporting the crucible 2 can be achieved at a minimum.
  • the position where the crucible receiving portion 5 is provided is a substantially intermediate position between the upper end of the filling surface 1a and the lower end of the opening 7 of the crucible 2, and influences the evaporation amount of the vapor deposition material 1 as much as possible. While making it small, the crucible receiving part 5 and the crucible support part 6 are separated from the opening 7 of the crucible 2 to make it difficult to be contaminated.
  • the heating unit 3 As the heating unit 3, a general sheath heater is adopted.
  • the heating unit 3 is provided between the crucible 2 and the storage body 4.
  • the crucible support part 6 is provided so as to surround the side surface and the bottom surface of the crucible 2 except for a part through which the crucible support part 6 passes, so that the crucible receiving part 5 and the crucible support part 6 are heated by the heating part 3. It is composed. Therefore, the crucible receiving part 5 and the crucible support part 6 are also heated by the heating part 3, so that the heat fluctuation in the vicinity of the crucible receiving part 5 due to contact with the crucible support part 6, that is, the temperature drop in the vicinity of the crucible receiving part 5. Is suppressed.
  • the contact point between the crucible receiving part 5 and the crucible support part 6 is provided on the crucible 2 side from the inner surface of the heating part 3. Therefore, the crucible 2 receives external heat fluctuations through the contact of the crucible support 6 and is hardly affected by external heat fluctuations. That is, for example, when there is a contact point between the crucible receiving part 5 and the crucible support part 6 outside the heating part 3 (when a part of the crucible 2 exists outside the heating part 3), a part of the crucible 2 is Under the influence of the outside of the heating unit 3, the heat fluctuation is transmitted to the crucible 2 by the heat conduction of the crucible 2, so that the heat fluctuation is easily affected.
  • the crucible support part 6 may be constituted by the heating part 3, and in this case, the thermal fluctuation in the vicinity of the crucible receiving part 5 is further suppressed.
  • the crucible 2 may be provided with a protruding portion 8, and in this case as well, thermal fluctuations in the vicinity of the crucible receiving portion 5 are further suppressed.
  • a heat reflecting member may be provided between the housing 4 and the heating unit 3 so as to surround the heating unit 3.
  • the crucible 2 is heated by the heating unit 3 more satisfactorily. It becomes possible to do.
  • the heating unit 3 it is possible to make the temperature distribution of the crucible 2 uniform by the heating unit 3 to make the temperature distribution of the vapor deposition material 1 filled in the crucible 2 uniform, and stabilize the evaporation amount of the vapor deposition material. Can be achieved.
  • the second embodiment is a linear evaporation source including a plurality of openings 7 along the longitudinal direction on the upper end surface and having crucibles 2 that are long in the parallel direction of the openings 7. is there.
  • Example 2 a protruding portion 8 that protrudes toward the inner surface of the housing 4 is provided on the outer surface of the crucible 2, and the crucible receiving portion 5 is provided on the protruding portion 8. Specifically, a plurality of protrusions 8 are provided at predetermined intervals.
  • the crucible 2 is configured by connecting the upper and lower divided bodies 2a and 2b using bolts 10 and nuts 11 in a state where the opposed surfaces thereof are in contact with each other. Specifically, the divided bodies 2a and 2b are connected by inserting the bolt 10 through an insertion hole provided in the protruding portion 8 and screwing the nut 11 therethrough.
  • a concave portion as the crucible receiving portion 5 is provided at the protruding end portion of the protruding portion 8. Further, the width of the concave portion (the gap with the crucible support portion 6) is appropriately set for each part so as to allow the elongation in consideration of the elongation of the crucible 2 due to heat.
  • Example 2 by providing the protrusion 8, the crucible receiving part 5 can be provided at a position further away from the vapor deposition material 1 of the crucible 2, and the temperature due to heat conduction from the protrusion 8 to the crucible support part 6. It is possible to effectively mitigate the influence of the decrease.
  • the heating unit 3 is provided so as to surround the upper and lower surfaces of the protruding portion 8 and the protruding end surface (except for a part through which the crucible support portion 6 passes). Accordingly, the surface area of the crucible receiving portion 5 to be heated is increased as compared with the case where the protruding portion 8 is not provided. Also from this point, the effect of the temperature drop due to the heat conduction from the protruding portion 8 to the crucible support portion 6 is effective. It becomes possible to relax.
  • the temperature distribution of the crucible 2 can be made uniform by the heating unit 3, and the temperature distribution of the vapor deposition material 1 filled in the crucible 2 can be made uniform. Since it becomes uniform regardless of the position in the crucible 2, it is possible to form a film with a uniform film thickness distribution.
  • Example 2 has comprised the protrusion part 8 as mentioned above, you may comprise like another example illustrated in FIG. In other words, the protruding portion 8 may be provided in a bowl shape around the outer surface of the crucible 2.
  • reference numerals 12 and 13 are storage recesses for storing the head and tail of the bolt 10 connecting the divided bodies 2 a and 2 b and the nut 11.
  • the seal member 9 is provided between the opposing surfaces which are the contact portions between the divided bodies 2a and 2b, and the leakage of the vapor deposition material 1 can be further prevented.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à une source d'évaporation avec laquelle l'effet des fluctuations thermiques en raison d'un contact n'est pas facilement transmis à un matériau de dépôt en phase vapeur, et avec laquelle la distribution thermique du matériau de dépôt en phase vapeur peut être rendue uniforme et la quantité d'évaporation du matériau de dépôt en phase vapeur peut être stabilisée. Cette source d'évaporation comprend un creuset (2) rempli avec un matériau d'évaporation (1), une partie chauffante (3) agencée de sorte à entourer ce creuset (2), et un récipient (4) agencé de sorte à contenir le creuset (2) et l'unité chauffante (3). L'agencement de la source est tel que les parties (5) recevant le creuset sont agencées sur la surface extérieure du creuset à des positions qui sont plus hautes que la surface de remplissage (1a) du matériau d'évaporation (1) et plus basses que la position de l'ouverture du creuset (2), les parties (5) recevant le creuset sont supportées par des parties de support de creuset (6) agencées à l'intérieur du récipient (4), et le creuset (2) est reçu dans le récipient (4), la surface de base extérieure du creuset (2) étant séparée de la surface de base intérieure du récipient (4).
PCT/JP2013/071621 2012-08-29 2013-08-09 Source d'évaporation WO2014034410A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201380044630.2A CN104603321B (zh) 2012-08-29 2013-08-09 蒸发源
KR1020157007556A KR102049629B1 (ko) 2012-08-29 2013-08-09 증발원

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012188691A JP6049355B2 (ja) 2012-08-29 2012-08-29 蒸発源
JP2012-188691 2012-08-29

Publications (1)

Publication Number Publication Date
WO2014034410A1 true WO2014034410A1 (fr) 2014-03-06

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ID=50183226

Family Applications (1)

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PCT/JP2013/071621 WO2014034410A1 (fr) 2012-08-29 2013-08-09 Source d'évaporation

Country Status (5)

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JP (1) JP6049355B2 (fr)
KR (1) KR102049629B1 (fr)
CN (1) CN104603321B (fr)
TW (1) TWI589716B (fr)
WO (1) WO2014034410A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016030839A (ja) * 2014-07-28 2016-03-07 株式会社Ｊｏｌｅｄ 蒸着装置および蒸発源

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Publication number Priority date Publication date Assignee Title
KR101528709B1 (ko) * 2014-09-30 2015-06-16 에스엔유 프리시젼 주식회사 증착 균일도를 향상시키는 증착 용기
KR101615913B1 (ko) * 2014-11-12 2016-05-13 에스엔유 프리시젼 주식회사 박막증착장치
CN106893981B (zh) * 2017-03-30 2019-01-25 南京大学 一种用于提高蒸发束流稳定性的坩埚和具有该坩埚的源炉
WO2019054530A1 (fr) * 2017-09-14 2019-03-21 (주)알파플러스 Source d'évaporation sous vide
CN107604318B (zh) * 2017-09-27 2019-10-15 京东方科技集团股份有限公司 坩埚加热装置
CN107805782B (zh) * 2017-11-27 2019-09-20 深圳市华星光电半导体显示技术有限公司 一种蒸镀装置
CN107916401B (zh) * 2017-12-15 2023-09-22 合肥鑫晟光电科技有限公司 蒸镀坩埚和蒸镀装置
JP6526880B1 (ja) * 2018-06-29 2019-06-05 キヤノントッキ株式会社 蒸発源及び蒸着装置
WO2020230359A1 (fr) * 2019-05-13 2020-11-19 株式会社アルバック Unité de dépôt et dispositif de dépôt sous vide doté de ladite unité de dépôt
JP7088891B2 (ja) * 2019-09-26 2022-06-21 キヤノントッキ株式会社 蒸発源装置及び蒸着装置
CN112912534B (zh) * 2019-10-04 2022-06-17 株式会社爱发科 真空蒸镀装置用蒸镀源

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JPH06108236A (ja) * 1992-09-25 1994-04-19 Mitsubishi Electric Corp 薄膜形成装置
JPH07300666A (ja) * 1994-04-27 1995-11-14 Nissin Electric Co Ltd シリコン蒸発用分子線源およびこれに用いるるつぼの製造方法
JPH09209126A (ja) * 1996-02-08 1997-08-12 Idemitsu Kosan Co Ltd 真空蒸着装置
JP2005154903A (ja) * 2003-11-26 2005-06-16 Samsung Sdi Co Ltd 蒸着膜形成方法及び蒸着膜形成装置
JP2007314873A (ja) * 2006-05-23 2007-12-06 Semes Co Ltd 複数のルツボを利用した有機発光素子薄膜製作のための線形蒸発源
JP2012214835A (ja) * 2011-03-31 2012-11-08 Hitachi High-Technologies Corp 蒸着装置

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KR100434438B1 (ko) * 2002-11-18 2004-06-04 주식회사 야스 증착 공정용 원추형 노즐 증발원
JP2006104513A (ja) 2004-10-04 2006-04-20 Toyota Industries Corp 蒸発源におけるるつぼの冷却方法及び蒸発源
JP4696710B2 (ja) 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100712217B1 (ko) * 2005-09-30 2007-04-27 삼성에스디아이 주식회사 증발원 및 이를 이용한 진공증착기

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Publication number Priority date Publication date Assignee Title
JPH06108236A (ja) * 1992-09-25 1994-04-19 Mitsubishi Electric Corp 薄膜形成装置
JPH07300666A (ja) * 1994-04-27 1995-11-14 Nissin Electric Co Ltd シリコン蒸発用分子線源およびこれに用いるるつぼの製造方法
JPH09209126A (ja) * 1996-02-08 1997-08-12 Idemitsu Kosan Co Ltd 真空蒸着装置
JP2005154903A (ja) * 2003-11-26 2005-06-16 Samsung Sdi Co Ltd 蒸着膜形成方法及び蒸着膜形成装置
JP2007314873A (ja) * 2006-05-23 2007-12-06 Semes Co Ltd 複数のルツボを利用した有機発光素子薄膜製作のための線形蒸発源
JP2012214835A (ja) * 2011-03-31 2012-11-08 Hitachi High-Technologies Corp 蒸着装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016030839A (ja) * 2014-07-28 2016-03-07 株式会社Ｊｏｌｅｄ 蒸着装置および蒸発源

Also Published As

Publication number Publication date
TWI589716B (zh) 2017-07-01
KR20150044961A (ko) 2015-04-27
TW201425613A (zh) 2014-07-01
CN104603321A (zh) 2015-05-06
KR102049629B1 (ko) 2019-11-28
JP2014047365A (ja) 2014-03-17
JP6049355B2 (ja) 2016-12-21
CN104603321B (zh) 2016-10-26

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