WO2014014288A1 - Dispositif photoémetteur organique - Google Patents

Dispositif photoémetteur organique Download PDF

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WO2014014288A1
WO2014014288A1 PCT/KR2013/006438 KR2013006438W WO2014014288A1 WO 2014014288 A1 WO2014014288 A1 WO 2014014288A1 KR 2013006438 W KR2013006438 W KR 2013006438W WO 2014014288 A1 WO2014014288 A1 WO 2014014288A1
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layer
light emitting
transport material
organic light
emitting device
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PCT/KR2013/006438
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English (en)
Korean (ko)
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정원익
문제민
함윤혜
유진아
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주식회사 엘지화학
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Priority to CN201380038347.9A priority Critical patent/CN104471735B/zh
Priority to JP2015523014A priority patent/JP6356124B2/ja
Priority to EP13819883.3A priority patent/EP2750215B1/fr
Priority to US14/415,069 priority patent/US9508949B2/en
Publication of WO2014014288A1 publication Critical patent/WO2014014288A1/fr

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Definitions

  • the present specification relates to an organic light emitting device.
  • the organic light emitting phenomenon is an example in which the current is converted into visible light by an internal process of a specific organic molecule.
  • the principle of organic light emitting phenomenon is as follows. When the organic material layer is positioned between the anode and the cathode, when a voltage is applied between the inside of a specific organic molecule through two electrodes, electrons and holes are injected into the organic material layer from the cathode and the anode, respectively. The electrons and holes injected into the organic layer recombine to form excitons, which then fall back to the ground to shine.
  • An organic light emitting device using this principle may generally include an organic material layer including a cathode, an anode, and an organic material layer disposed therebetween, such as a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer.
  • first electrode First electrode
  • Second electrode At least two organic material layers provided between the first electrode and the second electrode,
  • the organic layer is a light emitting layer; And it provides an organic light emitting device comprising a mixed layer comprising at least one hole transport material and at least one electron transport material.
  • the present disclosure provides a display including the organic light emitting device.
  • the present specification provides a lighting device including the organic light emitting device.
  • the organic light emitting device of the present specification has an advantage of low driving voltage.
  • the organic light emitting device of the present specification has an advantage of excellent power efficiency.
  • the organic light emitting device of the present specification has an advantage of excellent quantum efficiency (Quantum Efficiency, Q.E.).
  • FIG. 1 and 2 illustrate an organic light emitting device according to an exemplary embodiment of the present specification.
  • FIG 3 illustrates a difference in energy levels of each layer in the organic light emitting diode according to the exemplary embodiment of the present specification.
  • HTM hole transport material
  • ETM electron transport material
  • first electrode First electrode
  • Second electrode At least two organic material layers provided between the first electrode and the second electrode,
  • the organic layer is a light emitting layer; And it provides an organic light emitting device comprising a mixed layer comprising at least one hole transport material and at least one electron transport material.
  • the mixed layer may be provided in contact with the light emitting layer.
  • Contact with the light emitting layer may mean that the mixed layer is provided in physical contact with the light emitting layer.
  • the mixed layer may mean that the light emitting layer is provided closer than the other layers mentioned in the present specification.
  • the mixed layer may increase the efficiency of the organic light emitting device by recycling triplet excitons generated in the light emitting layer by using charge transfer complexes generated in the mixed layer. Therefore, the mixed layer is preferably provided adjacent to the light emitting layer of the organic light emitting device.
  • the light emitting position of the organic light emitting diode is distributed in a Gaussian shape, and a recombination zone may be distributed to a part of the mixed layer adjacent to the light emitting layer.
  • a recombination zone may be distributed to a part of the mixed layer adjacent to the light emitting layer.
  • the material included in the light emitting layer may be determined according to the energy level of the charge transfer complex generated in the mixed layer. Specifically, according to one embodiment of the present specification, when the energy of the charge transfer complex of the mixed layer is 2.5 eV, the energy of the light emitting material included in the light emitting layer may have an energy of more than 2.5 eV. More specifically, according to one embodiment of the present specification, when the light emitting layer includes a blue light emitting material, the energy of the charge transfer complex of the mixed layer may be 2.7 eV or more.
  • the energy of the charge transfer complex may mean an energy level of the charge transfer complex, and the energy of the light emitting material may be an energy level of a singlet state of the light emitting material.
  • the organic material layer further includes a hole transport layer
  • the mixed layer may be provided between the hole transport layer and the light emitting layer.
  • the electron mobility of the light emitting layer is greater than the hole mobility
  • the recombination zone is more likely to occur at the interface between the light emitting layer and the hole transport layer, so that the mixed layer is provided between the light emitting layer and the hole transport layer to triple the light emitting layer. You can recycle the excitons.
  • FIG. 1 illustrates an organic light emitting device according to an exemplary embodiment of the present specification. Specifically, an organic light emitting device in which the hole transport layer 201, the mixed layer 301, the light emitting layer 401, the electron transport layer 501, and the cathode 601 are sequentially stacked on the anode 101 is illustrated.
  • the organic light emitting device of the present specification is not limited to the above configuration, and may further include additional layers.
  • the organic material layer further includes an electron transport layer
  • the mixed layer may be provided between the electron transport layer and the light emitting layer.
  • the hole mobility of the light emitting layer is greater than the electron mobility
  • the recombination zone is more likely to occur at the interface between the light emitting layer and the electron transport layer, so that the mixed layer is provided between the light emitting layer and the electron transport layer to triple the light emitting layer. You can recycle the excitons.
  • FIG. 2 illustrates an organic light emitting device according to an exemplary embodiment of the present specification. Specifically, an organic light emitting device in which the hole transport layer 201, the light emitting layer 401, the mixed layer 301, the electron transport layer 501, and the cathode 601 are sequentially stacked on the anode 101 is illustrated.
  • the organic light emitting device of the present specification is not limited to the above configuration, and may further include additional layers.
  • the mixed layer may be a layer including one or two or more hole transport materials and electron transport materials, respectively.
  • the mixed layer may be a layer in which a hole transport material and an electron transport material are mixed.
  • the mixed layer may form one layer in a state in which the hole transport material and the electron transport material are not bonded to each other.
  • the mixed layer may include a charge transfer complex of a hole transport material and an electron transport material.
  • the mixed layer may be formed of a combination of a hole transport material and an electron transport material to form a charge transfer complex.
  • the mixed layer includes the charge transfer complex; Hole transport material remaining without forming a charge transfer complex; And an electron transport material.
  • a charge transport complex when the charge transport complex is mixed with the hole transport material and the electron transport material, a charge transport complex may be formed between the two materials.
  • the hole transport material of the mixed layer may have a strong electron donor property
  • the electron transport material may have a strong electron acceptor property
  • the hole transport material and the electron transport material of the mixed layer are combined, so that charge transfer occurs between the two to be in a state in which the two materials are coupled by electrostatic attraction.
  • the charge transfer complex of the present specification may mean a state in which electrons and holes are distributed in two different materials.
  • the charge transfer complex of the mixed layer creates a new energy level generated by the charge transfer complex in addition to the energy levels of the hole transport material and the electron transport material forming the charge transport complex.
  • the charge transfer complex has a binding property of electrons and holes, and thus, in the charge transfer complex, electrons and positive spaces of the hole transport material and the exciton state formed in each of the hole transport material and the electron transport material The distance is further away. That is, the electrons and holes in the exciton state of the charge transfer complex are more weakly bound than the electrons and holes in the exciton state generated in each of the hole transport material and the electron transport material.
  • the charge transfer complex lowers the exchange energy between the electron and the hole, thereby reducing the difference between the singlet energy level and the triplet energy level.
  • the charge transfer complex may make a state in which the difference between singlet energy and triplet energy level is small.
  • the difference between the singlet energy and triplet energy may be 0.3 eV or less.
  • the inventors have found that the biggest factor that hinders the efficiency in the organic light emitting device using fluorescence emission using only singlet excitons is triplet excitons generated by recombination of electron-holes. In this case, the singlet excitons generated by recombination were only about 25%.
  • the present inventors have developed an organic light emitting device including the mixed layer of the present specification. That is, the organic light emitting device according to the exemplary embodiment of the present specification can solve the above problems and achieve higher efficiency. Specifically, by using a material having a small difference between singlet energy and triplet energy, such as the charge transfer complex, triplet excitons discarded in the organic light emitting device using fluorescence can be utilized to further increase efficiency.
  • a material having a small difference between singlet energy and triplet energy such as the charge transfer complex
  • the organic light emitting device forms a charge transfer complex through a combination of an electron transport material and a hole transport material and electrons in the light emitting layer using a small singlet-triple energy difference of the charge transport complex. Improvement of the efficiency of the organic light emitting device was realized by allowing the triplet excitons, which are discarded through excitation of holes and holes, to be recycled.
  • Recombination of electrons and holes in the light emitting layer of the organic light emitting device according to an exemplary embodiment of the present specification can be largely divided into two.
  • electrons and holes may be recombined in a host material in an emission layer to form an exciton, and then may emit light through an energy transfer to a dopant material.
  • the light emitting layer is configured as a host-guest system
  • holes and electrons are injected into the HOMO energy level and the LUMO energy level of the host material, respectively, to recombine a Langvin type to recombine the host.
  • the excitons are first generated in the material, and the excitons are sequentially formed in the dopant material through energy transfer, and finally the light is emitted from the dopant material.
  • the light emission as described above may be the case of an organic light emitting device including a fluorescent light emitting layer.
  • electrons and holes may be directly injected into the dopant material so that excitons are formed directly in the dopant material to emit light.
  • light emission may occur in a form similar to the SRH type (Shockley-Read-Hall type).
  • the light emission as described above may be the case of an organic light emitting device including a phosphorescent light emitting layer.
  • the host material when the light emitting layer is formed of a combination of a host material and a dopant material, the host material may serve to pass excitons to the dopant without participating in actual light emission. Therefore, the host material may have to have a higher energy level than the dopant material. Therefore, according to one embodiment of the present specification, a host material emitting energy in a range overlapping with an energy absorption range of the dopant material may be used for more efficient energy transfer.
  • the recombination of electrons and holes in the light emitting layer occurs by the recombination of the Langvin type, and the initial electrons and holes when the light emission occurs through energy transfer from the host material to the dopant material
  • the exciton of the host material produced by the recombination of may have an energy higher than that of the dopant in which light emission occurs.
  • the singlet exciter energy level of the host material as well as the triplet exciter energy level may be higher than the energy level of the dopant material.
  • the excitons used for emitting light may be singlet excitons of the host material, and the triplet excitons of the host material may not contribute to light emission. have.
  • the triplet excitons of the host material have a long life and may be diffused in the light emitting layer and then react with each other (triplet-triplet annihilation) to make singlet excitons and be used again for emission.
  • the triplet excitons of the host material may be dissipated by dissipating heat along the vibration-electron level, and may be dissipated after energy transfer to the triplet of the dopant material. That is, there is a problem that triplet excitons of the host material do not contribute to light emission.
  • Triplet excitons of the host material can diffuse to adjacent layers. Therefore, according to one embodiment of the present specification, the efficiency of the organic light emitting device can be increased by recycling triplet excitons of the host material diffused into the mixed layer provided adjacent to the light emitting layer. Specifically, the charge transfer complex in the mixed layer may convert the triplet excitons discarded in the light emitting layer into singlet excitons, and may transmit the singlet excitons generated at this time to the light emitting layer to improve luminous efficiency. In addition, according to an exemplary embodiment of the present specification, when the light emitting layer of the organic light emitting device is a fluorescent light emitting layer, the light emission efficiency may be more excellent.
  • the energy level of triplet excitons of the host material is greater than or equal to the singlet energy level of the dopant, is greater than or equal to the energy level of the charge transfer complex in the mixed layer, and the hole transport in the mixed layer It may be less than the energy level of triplet excitons of materials and electron transport materials.
  • the mass ratio of the hole transport material and the electron transport material of the mixed layer may be 1: 4 to 4: 1.
  • the mixed layer is formed using the hole transport material and the electron transport material within the above range, it is possible to maximize the utilization of the triplet excitons generated in the light emitting layer.
  • the charge transfer complex when the charge transfer complex is formed within the range, the charge transfer complex may be formed to the maximum, thereby increasing the efficiency of the organic light emitting device.
  • the mixed layer includes the hole transport material, the electron transport material, and a charge transfer complex thereof, both the electron and the hole may be moved.
  • the mixing ratio of the hole transport material and the electron transport material it is possible to control the mobility of electrons and holes. That is, the charge balance in the light emitting layer can be controlled by controlling the mobility of electrons and holes.
  • the mixed layer may have a wider distribution of density of state (DOS) than when the hole transport material and the electron transport material are present alone. That is, the energy level at which holes or electrons can move may have the energy levels of the hole transport material and the electron transport material as they are, and may also have the DOS of the hole transport material and the electron transport material. .
  • DOS density of state
  • energy transfer may occur between the hole transport material and the electron transport material in the mixed layer, and the energy transport of the hole transport material and / or the electron transport material and the charge transfer complex. This may happen.
  • the energy distribution may be wide as shown in FIG. 3.
  • the maximum energy that the charge transport complex may have is the HOMO energy level of the hole transport material and the electrons. This can be a difference in the LUMO energy level of the transport material.
  • electrons are present in LUMO of the electron transport material, and holes are present in HOMO of the hole transport material, and may be in a state in which they are weakly bound to each other. Therefore, the band gap of the charge transfer complex is smaller than that of the hole transport material or the electron transport material alone, which forms the charge transport complex.
  • the band gap of the charge transfer complex is different from the HOMO energy level of the hole transport material and the LUMO energy level of the electron transport material. Can be smaller than
  • the binding energy of the hole of the hole transport material and the electrons of the electron transport material may be 0.2 eV or less when the charge transfer complex is formed.
  • the difference between the HOMO energy level of the hole transport material and the electron transport material of the mixed layer may be 0.2 eV or more. Specifically, the difference in the HOMO energy level may be 0.3 eV or more.
  • the LUMO energy level difference between the hole transport material and the electron transport material of the mixed layer may be 0.2 eV or more.
  • the difference in the LUMO energy level may be 0.3 eV or more.
  • the difference between the HOMO energy level of the hole transport material and the electron transport material of the mixed layer may be 0.2 eV or more, LUMO energy level difference may be 0.2 eV or more.
  • the difference in HOMO energy level is 0.3 eV or more, the LUMO energy level difference may be 0.3 eV or more.
  • the difference between the LUMO energy level of the electron transport material of the mixed layer and the HOMO energy level of the hole transport material may be 2 eV or more. Specifically, the difference between the LUMO energy level of the electron transport material and the HOMO energy level of the hole transport material of the mixed layer may be 2.6 eV or more.
  • the difference between the ionization potential of the hole transport material and the electron transport material of the mixed layer may be 0.2 eV or more. Specifically, the difference between the ionization potential of the hole transport material and the electron transport material of the mixed layer may be 0.3 eV or more.
  • the difference between the electron affinity of the hole transport material and the electron transport material of the mixed layer may be 0.2 eV or more.
  • the difference between the electron affinity of the hole transport material and the electron transport material of the mixed layer may be 0.3 eV or more.
  • the difference in ionization potential of the hole transport material and the electron transport material of the mixed layer is 0.2 eV or more, the difference in electron affinity between the hole transport material and the electron transport material of the mixed layer is 0.2 may be greater than or equal to eV.
  • the difference between the ionization potential of the hole transport material and the electron transport material of the mixed layer is 0.3 eV or more, the difference in electron affinity between the hole transport material and the electron transport material of the mixed layer may be 0.3 eV or more.
  • the difference between the electron affinity of the electron transport material of the mixed layer and the ionization potential of the hole transport material may be 2 eV or more.
  • the difference between the electron affinity of the electron transport material and the ionization potential of the hole transport material of the mixed layer may be 2.6 eV or more.
  • the difference between the HOMO energy level of the hole transport material and the electron transport material of the mixed layer, the difference of the LUMO energy level, and the difference between the LUMO energy level of the electron transport material and the HOMO energy level of the hole transport material When is in the above range, the binding energy of the exciton in the mixed layer may be greater than the exciton binding energy of the hole transport material or electron transport material. That is, the hole transport material and the electron transport material may be smoothly formed as a charge transfer complex.
  • the difference between the ionization potential of the hole transport material and the electron transport material of the mixed layer, the difference in electron affinity, and the difference in the ion affinity of the electron transport material and the hole transport material may be greater than the exciton binding energy of the hole transport material or the electron transport material. That is, in the above range, the hole transport material and the electron transport material can be formed smoothly as a charge transfer complex.
  • the binding energy of the exciton generated in the charge transfer complex of the mixed layer is smaller than the exciton binding energy of the hole transport material or the electron transport material in the mixed layer. This is because, in the case of charge transfer complexes, holes and electrons are farther apart from each other than in excitons generated from a single material. Therefore, the range for the difference in the energy level of the present specification is to minimize the energy to overcome the binding energy of the excitons in order for the exciton generated in the hole transport material and the electron transport material in the mixed layer to be transferred to the charge transfer complex It can be the difference in energy levels to obtain.
  • the charge transfer complex may be generated by directly recombining holes in the hole transport material and electrons in the electron transport material.
  • the electron transport material in the hole transport material and the electron transport material in the hole transport material in the mixed layer to stay in the hole transport material and the electron transport material, respectively Can be formed smoothly. That is, when the range is not satisfied, holes in the hole transport material move to the electron transport material in the mixed layer, and electrons in the electron transport material move to the hole transport material so that the charge transfer complex is not smoothly formed. do.
  • HOMO as used herein means the highest occupied molecular orbital and "LUMO” means the lowest unoccupied molecular orbital.
  • HOMO energy level difference and “LUMO energy level difference” mean the difference of the absolute value of each energy value.
  • HOMO and LUMO energy levels are expressed in absolute values.
  • the exciton binding energy of the present specification means the magnitude of the coulomb potential between electrons and charges in a molecule in an excited state.
  • Measurement of the HOMO energy level may use a UV photoelectron spectroscopy (UPS) to measure the ionization potential of the material by irradiating UV to the surface of the thin film, detecting the protruding electron (electron).
  • the HOMO energy level may be measured by cyclic voltammetry (CV) which measures an oxidation potential through voltage sweep after dissolving the measurement target material in a solvent together with an electrolyte.
  • CV cyclic voltammetry
  • the UPS can measure more accurate values than the CV, and the HOMO energy level of the present specification was measured by the UPS method.
  • LUMO energy levels can be obtained by measuring inverse photoelectron spectroscopy (IPES) or electrochemical reduction potential.
  • IPES is a method of irradiating an electron beam (electron beam) to a thin film and measuring the light emitted at this time to determine the LUMO energy level.
  • the electrochemical reduction potential may be measured by dissolving a substance to be measured in a solvent together with an electrolyte and then measuring a reduction potential through a voltage sweep.
  • the LUMO energy level may be calculated using the singlet energy level obtained by measuring the HOMO energy level and the degree of UV absorption of the target material.
  • the hole transport material of the mixed layer is an aromatic amine group; Ditoliamine group; Aromatic aniline groups; Indolo acridine groups; And it may include one or more substituents selected from the group consisting of aromatic silane groups.
  • the aromatic amine group may be a carbazole group, a phenylamine group, a diphenylamine group, or the like, but is not limited thereto.
  • the hole transport material of the mixed layer is NPB (4,4'-bis [N- (1-napthyl) -N-phenyl-amino] -biphenyl) and PBP (4-phenylbenzophenone); m-MTDATA (4,4'4 "-tris [3-methylphenyl (phenyl) amino] triphenylamine); and TCTA (4,4 ', 4" -tri (N-carbazolyl) triphenylamine) It may include more than one species.
  • the LUMO energy level of the m-MTDATA is 2 eV, and the HOMO energy level is 5.1 eV.
  • the LUMO energy level of TCTA is 2.1 eV, and the HOMO energy level is 5.5 eV.
  • the hole transport material of the mixed layer is arylamine, aromatic amine, thiophene, carbazole, fluorine derivative, N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl)- benzidine), N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine (N, N'-bis (naphthalen-2-yl) -N, N'-bis ( phenyl) -benzidine), N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -benzidine (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) ) -benzidine), N, N'-bis (3-methylphenyl) -N, N'-
  • the electron transport material of the mixed layer is a pyridine group; Triazine group; Phosphine oxide groups; Benzofuran group; Dibenzofuran group; Benzothiophene group; Dibenzothiophene group; Benzophenone group; And it may include one or more substituents selected from the group consisting of oxadiazole groups.
  • the electron transport material of the mixed layer is PBP (4-phenylbenzophenone); t-Bu-PBD (2- (biphenyl-4yl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole); 3TPYMB (tris- [3- (3-pyridyl) mesityl] borane); And B3PYMPM (bis-4,6- (3,5-di-3-pyridylphenyl) -2-methylpyrimi-dine) may include one or more selected from the group consisting of.
  • the LUMO energy level is 2.4 eV and the HOMO energy level is 6.1 eV.
  • the LUMO energy level of B3PYMPB is 3.2 eV, and the HOMO energy level is 6.8 eV.
  • the electron transporting material of the mixed layer is 2,2 ', 2 "-(1,3,5-benzintriyl) -tris (1-phenyl-1H-benzimidazole) (2,2 ', 2 "-(1,3,5-benzinetriyl) -tris (1-phenyl-1H-benzimidazole)), 2- (4-biphenyl) -5- (4-tert-butylphenyl ) -1,3,4-oxadiazole (2- (4-biphenyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole), 2,9-dimethyl-4,7-di Phenyl-1,10-phenanthroline (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (4,7-diphenyl- 1,10-phenanthroline), bis (2
  • the mixed layer is a charge transfer complex of NPB (4,4'-bis [N- (1-napthyl) -N-phenyl-amino] -biphenyl) and PBP (4-phenylbenzophenone); m-MTDATA (4,4'4 "-tris [3-methylphenyl (phenyl) amino] triphenylamine) and t-Bu-PBD (2- (biphenyl-4yl) -5- (4-tert-butylphenyl) -1, Charge transfer complexes of 3,4-oxadiazole; m-MTDATA (4,4'4 "-tris [3-methylphenyl (phenyl) amino] triphenylamine) and 3TPYMB (tris- [3- (3-pyridyl) mesityl] borane Charge transfer complexes; And charge transfer complexes of TCTA (4,4 ', 4 "-tri (N-carbazoly
  • the driving voltage of the organic light emitting diode including the mixed layer is not higher than the driving voltage of the organic light emitting diode not including the mixed layer and shows a low driving voltage. Therefore, the organic light emitting device of the present specification may have excellent efficiency.
  • the quantum efficiency of the organic light emitting diode including the mixed layer may be improved by 10% or more compared to the quantum efficiency of the organic light emitting diode not including the mixed layer.
  • the luminous efficiency (lm / W) of the organic light emitting diode including the mixed layer may be improved by 20% or more compared to the organic light emitting diode not including the mixed layer.
  • the organic light emitting device including the mixed layer can obtain a better quantum efficiency due to a small donation of Delayed Fluorescence (DF).
  • DF Delayed Fluorescence
  • the organic light emitting device including the mixed layer may have an improved quantum efficiency in the fluorescent or phosphorescent light emitting device.
  • the organic light emitting device including the mixed layer may have an improved quantum efficiency in the fluorescent device.
  • the fluorescent device may be a fluorescent blue device.
  • the thickness of the mixed layer may be 1 nm or more and 200 nm or less. Specifically, the thickness of the mixed layer may be 1 nm or more and 20 nm or less, or 1 nm or more and 10 nm or less.
  • the mixed layer of the present specification When the mixed layer of the present specification is formed within the thickness range, the mixed layer becomes easier to recycle triplet excitons of the light emitting layer. That is, when the mixed layer is in the thickness range, the efficiency of the organic light emitting device is improved.
  • the organic light emitting device is a hole injection layer; Hole blocking layer; Charge generating layer; Electron blocking layer; Charge generating layer; And it may further include one or more selected from the group consisting of the electron injection layer.
  • the charge generating layer is a layer in which holes and electrons are generated when a voltage is applied.
  • the charge means electrons or holes.
  • quantum efficiency is defined as the ratio of the number of injected charges and the number of photons emitting light.
  • the first electrode may be an anode
  • the second electrode may be a cathode
  • the first electrode may be a cathode
  • the second electrode may be an anode
  • electrons are injected and transported from the cathode to the light emitting layer, and holes are injected and transported from the anode to the light emitting layer.
  • the light emitting property is one of the important properties of the device.
  • it is important to have a charge balance in the emission region.
  • the quantity of electrons transported from the cathode and the holes transported from the anode needs to be quantitatively balanced, but also the point where the electrons and holes meet together to form an exciton is in the emission region.
  • the organic light emitting device including the mixed layer may improve the charge balance.
  • each layer constituting the organic light emitting device will be described in detail.
  • the materials of each layer described below may be a single material or a mixture of two or more materials.
  • the anode includes a metal, metal oxide or conductive polymer.
  • the conductive polymer may include an electrically conductive polymer.
  • the anode may have a work function value of about 3.5 to 5.5 eV.
  • exemplary conductive materials include carbon, aluminum, vanadium, chromium, copper, zinc, silver, gold, other metals and alloys thereof; Zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide and other similar metal oxides; Mixtures of oxides and metals such as ZnO: Al and SnO 2: Sb.
  • a transparent material may be used, and an opaque material may be used. In the case of a structure that emits light in the anode direction, the anode may be formed transparently.
  • transparent means that the light emitted from the organic material layer can be transmitted, the light transmittance is not particularly limited.
  • an opaque material having excellent light reflectance as well as a transparent material may be used as the anode material.
  • a transparent material is used as the anode material, or formed into a thin film such that the opaque material becomes transparent. Should be.
  • Emission Layer Emission Layer
  • the light emitting layer since hole and electron transfer occur simultaneously, the light emitting layer may have both n-type and p-type characteristics. For convenience, it may be defined as an n-type light emitting layer when electron transport is faster than hole transport, and a p-type light emitting layer when hole transport is faster than electron transport.
  • the n-type light emitting layer includes, but is not limited to, aluminum tris (8-hydroxyquinoline) (Alq 3 ); 8-hydroxyquinoline beryllium (BAlq); Benzoxazole compound, benzthiazole compound or benzimidazole compound; Polyfluorene-based compounds; Silacyclopentadiene (silole) compounds and the like.
  • the p-type light emitting layer is not limited thereto, but a carbazole compound; Anthracene-based compounds; Polyphenylenevinylene (PPV) -based polymers; Or spiro compounds and the like.
  • a material having a small work function is generally preferred to facilitate electron injection.
  • a material having a work function of 2 eV to 5 eV may be used as the cathode material.
  • the cathode is, but is not limited to, metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; Multilayer structure materials such as LiF / Al or LiO 2 / Al, and the like.
  • the cathode may be formed of the same material as the anode.
  • the cathode can be formed of the materials exemplified above as the material of the anode.
  • the cathode or anode may comprise a transparent material.
  • the organic light emitting device may include a light extraction layer.
  • the light extraction layer may be an internal light extraction layer or an external light extraction layer.
  • the organic light emitting device may further include a substrate.
  • the organic light emitting diode may include the first electrode or the second electrode on the substrate.
  • the organic light emitting device further includes a substrate on a surface opposite to a surface on which the organic material layer of the first electrode is provided, and on a surface opposite to a surface on which the organic material layer of the first electrode is provided.
  • An internal light extraction layer may be further included between the substrate and the first electrode.
  • the internal light extraction layer may include a flat layer.
  • the organic light emitting diode further includes a substrate on a surface opposite to a surface on which the organic material layer of the first electrode is provided, and faces a surface on which the first electrode of the substrate is provided.
  • the surface may further include an external light extraction layer.
  • the external light extraction layer may include a flat layer.
  • the internal light extraction layer or the external light extraction layer is not particularly limited so long as it has a structure that can induce light scattering and improve the light extraction efficiency of the organic light emitting device.
  • the light extraction layer may have a structure in which scattering particles are dispersed in a binder.
  • the light extraction layer may be formed directly on the substrate by a method such as spin coating, bar coating, slit coating, or the like by forming and attaching a film.
  • the organic light emitting device may be a flexible organic light emitting device.
  • the substrate may comprise a flexible material.
  • the substrate may be a glass, plastic substrate, or film substrate in the form of a thin film that can be bent.
  • the method of manufacturing the flexible organic light emitting diode includes: 1) forming a polyimide layer on a carrier substrate, and 2) thin glass on the polyimide layer. Forming a substrate, 3) forming an organic light emitting device on the thin film glass substrate, and 4) separating the carrier substrate.
  • step 1) is a step of forming a polyimide layer on a carrier substrate.
  • the carrier substrate may use a material known in the art. More specifically, the carrier substrate may be a glass substrate, a metal substrate, a plastic substrate and the like, but is not limited thereto.
  • the thickness of the carrier substrate may be 0.5 mm to 0.7 mm, but is not limited thereto.
  • the polyimide layer may be formed using a method known in the art. More specifically, the polyimide layer may be formed by a process of laminating a polyimide film on a carrier substrate, or may be formed by coating and curing a polyamic acid composition on a carrier substrate.
  • a process of sequentially forming a polyimide layer, a thin glass substrate, and an organic light emitting device on the carrier substrate may be a plate-to-plate process or a roll-to-plate process.
  • a roll-to-roll process may be used.
  • the flexible organic light emitting device can be manufactured by using a roll-to-roll process, there is a feature that can reduce the process cost.
  • step 4) may be a step of separating the carrier substrate.
  • the separation method of the carrier substrate may use a method known in the art, such as a knife, a laser, in particular can be easily separated only by a knife.
  • the material of the plastic substrate is not particularly limited, but generally, a film such as PET, PEN, PEEK, and PI may be included in the form of a single layer or a multilayer.
  • the present specification provides a display device including the organic light emitting diode.
  • the organic light emitting diode may serve as a pixel or a backlight.
  • the configuration of the display device may be applied to those known in the art.
  • the present specification provides a lighting device including the organic light emitting device.
  • the organic light emitting diode serves as a light emitting unit.
  • the configurations required for the lighting device may be applied to those known in the art.
  • An organic light emitting device was manufactured in the same manner as in Example 1, except that an electron transport layer was formed instead of the mixed layer of Example 1. 5 shows data about quantum efficiency, luminous efficiency, and driving voltage of an organic light emitting diode according to a comparative example.
  • the quantum efficiency, the luminous efficiency, and the driving voltage of the organic light emitting diode (x> 0; embodiment) are compared.
  • the x-axis of Figure 5 shows the percentage of the hole transport material in the total mixed layer in percentage.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif photoémetteur organique.
PCT/KR2013/006438 2012-07-18 2013-07-18 Dispositif photoémetteur organique WO2014014288A1 (fr)

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EP13819883.3A EP2750215B1 (fr) 2012-07-18 2013-07-18 Dispositif photoémetteur organique
US14/415,069 US9508949B2 (en) 2012-07-18 2013-07-18 Organic light-emitting device

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TWI622198B (zh) 2018-04-21
KR20140011966A (ko) 2014-01-29
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