WO2014012322A1 - Diode électroluminescente au nitrure à connexion par billes et son substrat de transmission de lumière, et leur procédé de fabrication - Google Patents

Diode électroluminescente au nitrure à connexion par billes et son substrat de transmission de lumière, et leur procédé de fabrication Download PDF

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Publication number
WO2014012322A1
WO2014012322A1 PCT/CN2012/086086 CN2012086086W WO2014012322A1 WO 2014012322 A1 WO2014012322 A1 WO 2014012322A1 CN 2012086086 W CN2012086086 W CN 2012086086W WO 2014012322 A1 WO2014012322 A1 WO 2014012322A1
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WIPO (PCT)
Prior art keywords
light
transmitting substrate
flip
pattern
substrate
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Application number
PCT/CN2012/086086
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English (en)
Chinese (zh)
Inventor
廖丰标
顾玲
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江苏扬景光电有限公司
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Publication of WO2014012322A1 publication Critical patent/WO2014012322A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the present invention relates to a flip chip nitride light emitting diode and a light transmissive substrate therefor, and a method of fabricating the same, which is directed to forming a rough surface on at least one surface of the light transmissive substrate.
  • the light-emitting diodes having the light-transmissive substrate and the front-side electrodes are bonded face down to the solder bumps of the mounting stage, even if the epitaxial layer is closest to the mounting stage and the light-transmitting substrate is remote from the mounting stage.
  • the flip-chip configuration has several advantages, including improved heat dissipation and reduced shadowing loss due to the front side active layer (i.e., the light-emitting layer) being the most transparent substrate.
  • substrate standards include a narrow range of lattice constants, a substantially atomic leveling surface for epitaxial nucleation, thermal stability at epitaxial growth temperatures, and chemical compatibility with epitaxial processes, and the like.
  • the growth substrate is a suitable optically transparent substrate, such as a Group III nitride light-emitting diode that can grow on a transparent sapphire growth substrate, between the substrate and the air due to a sudden discontinuity in the refractive index A reflection optical loss occurs at the interface and at the interface of the substrate and the semiconductor layer.
  • the optical loss attributable to the substrate is due to reflection loss rather than absorption loss.
  • an object of the present invention is to provide a flip-chip nitride light-emitting diode, a light-transmitting substrate thereof, and a manufacturing method thereof, which increase the amount of light emitted from a flip-chip nitride light-emitting diode and emit light. Efficiency, reducing the overall temperature of the LED and improving product reliability.
  • the first technical solution adopted by the present invention is a light-transmissive substrate of a flip-chip nitride light-emitting diode, and at least an upper surface and a lower surface of the light-transmitting substrate A surface is a rough surface.
  • the overall temperature of the light emitting diode is lowered.
  • the book surface and the reliability of the product are improved, and the upper surface and the lower surface of the light-transmitting substrate are both rough surfaces.
  • the light transmissive substrate can be a sapphire substrate.
  • the second technical solution adopted by the present invention is a method for manufacturing a light-transmissive substrate of a flip-chip nitride light-emitting diode, and a lithography and dry etching step is used to generate a regular pattern surface, including the following steps: (1) lithography : coating a photosensitive material on one surface of the light-transmitting substrate; placing a reticle above the surface, the reticle is provided with the same pattern as the pattern; Exposure: selecting parallel light through the reticle to select the photosensitive material Exposure, the pattern of the reticle is completely transferred to the surface of the light-transmitting substrate; developing, so that the photosensitive material obtains the same or complementary pattern as the reticle pattern; (2) dry etching: performing the photographic material Dry etching causes the light transmissive substrate to produce a regular pattern surface.
  • a third technical solution adopted by the present invention is a method for manufacturing a light-transmissive substrate of a flip-chip nitride light-emitting diode, which uses a lithography and a wet etching step to produce a patterned regular surface, comprising the following steps: (1) lithography: Coating a photosensitive material on one surface of the light-transmitting substrate; placing a reticle above the surface, the reticle is provided with the same pattern as the pattern; Exposure: making parallel light pass through the reticle to selectively select the photosensitive material Exposure, the pattern of the reticle is completely transferred to the surface of the light-transmitting substrate; development, so that the photosensitive material obtains the same or complementary pattern as the reticle pattern; (2) Wet etching: 200 ° C to 350 ° C The light-transmitting substrate is etched by a mixed solution of phosphoric acid and sulfuric acid such that the light-transmitting substrate produces a pattern-like surface.
  • a fourth technical solution adopted by the present invention is a method for manufacturing a light-transmissive substrate of a flip-chip nitride light-emitting diode, and a wet etching step is used to generate two irregular patterns on the surface, including the following steps: forming a light-transmitting through the crystal growth step a substrate, the upper surface and the lower surface of the light-transmitting substrate are each formed with at least one defect; etching the light-transmitting substrate with a mixed solution of phosphoric acid and sulfuric acid at 200 ° C to 350 ° C, so that the light-transmitting substrate is simultaneously Produces two irregularly patterned surfaces.
  • the roughening of the upper and lower surfaces of the light-transmitting substrate can be completed in one time.
  • the fifth technical solution adopted by the present invention is a method for manufacturing a light-transmissive substrate of a flip-chip nitride light-emitting diode, and a pattern-finished surface is produced by laser-scanning a surface of the light-transmitting substrate to form a scribe line.
  • the sixth technical solution adopted by the present invention is a method for manufacturing a light-transmitting substrate of a flip-chip nitride light-emitting diode.
  • a laser beam is divided into a plurality of laser beams having uniform or uneven intensity, and the multi-beam intensity is uniform or
  • a non-uniform laser is projected onto one surface of the light-transmitting substrate to form a score line, which correspondingly produces a regular or irregular pattern.
  • a laser beam first passes through a first lens for uniformly expanding a laser beam; and a second lens is used to convert a laser beam into a plurality of parallel beams; a third lens having a uniform or uneven fine structure, the multi-beam parallel light is folded
  • the book is projected onto a surface of the light-transmissive substrate to form a score line, which correspondingly produces a regular or irregular surface.
  • a seventh technical solution adopted by the present invention is a flip-chip nitride light emitting diode comprising the light-transmitting substrate as described above, the upper surface of the light-transmitting substrate is deposited with a semiconductor layer stack, and the semiconductor layer stack is provided There is a p-type electrode and an n-type electrode, and the p-type electrode and the n-type electrode are respectively soldered on the first pad and the second pad of the mounting stage through a plurality of solder bumps.
  • the invention increases the light output and luminous efficiency of the flip-chip nitride light-emitting diode, reduces the overall temperature of the light-emitting diode, and improves the reliability of the product.
  • the use of a double-sided roughened substrate can further increase the light output and luminous efficiency of the flip-chip nitride light-emitting diode, reduce the overall temperature of the light-emitting diode, and improve the reliability of the product.
  • the roughening of one surface of the sapphire substrate of the flip-chip LED can increase the light output by 10% to 30%
  • the double-sided roughening can increase the light output by 15% to 80%.
  • FIG. 1 is a schematic structural view of a flip-chip nitride light emitting diode
  • Figure 2 is a schematic view showing the structure of a device for pulse laser projection.
  • a method for fabricating a flip-chip LED device is provided.
  • a plurality of epitaxial layers are deposited on the growth substrate to produce epitaxial wafers.
  • a plurality of light emitting diodes are fabricated on the epitaxial wafer.
  • the epitaxial wafer is cut to produce a device chip.
  • Flip-chip bonding includes securing a component chip on a mounting table by bonding at least one electrode of the component chip to at least one pad of the mounting table.
  • a light-emitting surface of the grown substrate (the same meaning of the light-transmitting substrate and the grown substrate in the present invention) of the component chip is generated. Rough structure.
  • the exemplary light emitting diode assembly chip 10 includes a semiconductor device layer stack deposited epitaxially on a growth substrate 16.
  • the semiconductor device layer stack defines an LED assembly, such as a diode that emits ultraviolet or blue light from Group I I nitride.
  • semiconductor layer stack 14 has two exemplary layers corresponding to a simple p/n diode; however, those skilled in the art will appreciate that more complex semiconductor layer stacks can be used.
  • the layer stack in a vertical cavity surface-emitting laser diode, can include a plurality of layers defining a Bragg reflector, a cladding layer, and a complex multi-quantum well active region.
  • the semiconductor layer stack usually includes an aluminum nitride or other material extension buffer (not shown), an n-type gallium nitride substrate layer 14, An active region of indium gallium nitride (i.e., light emitting layer) 15. A p-type gallium nitride layer 17 and optionally a contact layer (not shown) formed on the P-type gallium nitride layer.
  • aluminum nitride or other material extension buffer not shown
  • an n-type gallium nitride substrate layer 14 An active region of indium gallium nitride (i.e., light emitting layer) 15.
  • Other semiconductor epitaxial layer stacks suitable for particular optical applications can be readily constructed by those skilled in the art.
  • the growth substrate 16 is made of a crystalline material that is suitable for the growth of a selected semiconductor layer stack, and is referred to herein as a transparent sapphire.
  • the epitaxial deposition of the semiconductor layer stack on the selected grown substrate 16 is preferably deposited by organometallic chemical gas (M0VCD; also known in the art as organometallic gas epitaxy (0MVPE) and similar terms), Molecular beam epitaxy (MBE), liquid epitaxy (LPE) or other suitable extensional growth techniques are used.
  • M0VCD organometallic chemical gas
  • MBE Molecular beam epitaxy
  • LPE liquid epitaxy
  • the epitaxial growth technique is selected based on the type of semiconductor epitaxial layer stack to be grown.
  • a large-area substrate wafer having a semiconductor epitaxial layer stack deposited thereon is referred to as an epitaxial wafer.
  • the epitaxial wafer is processed using a suitable fabrication process to define at least one LED assembly on the wafer, including processes such as wafer cleaning processes, lithography processes, etching processes, dielectric deposition processes, metallization processes The sub-process of its analogues.
  • the fabrication process includes initial wafer cleaning, lithography and etching of the device mesas, and lithography of the n-type and p-type electrodes.
  • the LED assembly chip 10 is a lateral current geometry device and includes a P-type electrode 20 disposed on the surface of the assembly and an n-type electrode 22 disposed in a field region outside the mesa of the device.
  • the p-type electrode 20 and the n-type 22 are both front side electrodes.
  • the electrodes 20, 22 are made of gold or have a gold coating to facilitate electrical contact with low electrical resistance.
  • the mounting table 12 includes a first pad 26 configured to be coupled to the p-type electrode 20 and a second pad 28 disposed to be coupled to the n-type electrode 22. At least one solder bump 30 is disposed on the pads 26, 28, respectively.
  • the flip-chip LED module chip 10 is flip-chip bonded to the mounting pads 12, 28, and more specifically, the LED module chip 10 is bonded to the solder bumps 30.
  • the flip chip bonding can be achieved by soldering, in which case the solder bumps 30 are solder bumps.
  • the flip-chip bonding can be achieved by thermosonic bonding, in which case the bumps are preferably gold-coated copper bumps bonded to the electrodes by a combination of heating and implanting ultrasonic energy. 20, 22. Other joining methods can also be used.
  • the following five methods can be used to form a rough structure on the light-emitting surface of the grown substrate: (1) lithography and dry etching steps; (2) lithography and wet etching steps; (3) wet etching (4) Pulsed laser scanning roughening; and (5) Pulsed laser projection coarsening.
  • the following are introduced separately:
  • photosensitive material photoresist
  • Plasma Etching which uses gas as the main etching medium, such as C12/BC13, and drives the reaction by plasma energy to pattern the sapphire substrate to form a regularly arranged concave and convex pattern.
  • the height difference of the concave-convex pattern is within 20 ⁇ m. This way you can create a regular pattern.
  • the lithography process is the same as before, but when the photoresist has the same or complementary pattern as the reticle pattern, a high temperature phosphoric acid and sulfuric acid mixed solution (phosphoric acid) of 200 ° C to 350 ° C can be used. The weight percentage is 5% to 95%.
  • the sapphire substrate is etched to form a regularly arranged concave-convex pattern having a height difference of 20 ⁇ m. This way you can create a regular pattern.
  • At least one defect on the surface of the sapphire substrate is used without lithography, because the stress at each defect is high, and the chemical solution acts to form a relatively uniform pattern at each defect. A roughened surface is formed. Therefore, the sapphire substrate is immersed in a solution, for example, a mixed solution of phosphoric acid and sulfuric acid at a temperature of 200 ° C to 350 ° C (5% to 95% by weight of phosphoric acid), and can be regularly arranged on the front and back sides of the sapphire substrate. Concave pattern.
  • a solution for example, a mixed solution of phosphoric acid and sulfuric acid at a temperature of 200 ° C to 350 ° C (5% to 95% by weight of phosphoric acid
  • the position and the number of defects of the etched sapphire substrate can be controlled by controlling the crystal growth parameters, such as the melting point temperature, the crystal pulling speed, the crucible rotation speed or the center rotation speed of the crystal rod, thereby controlling the position and the number of each grain boundary.
  • the defects to be formed are formed on the sapphire substrate. This method does not produce a regular pattern.
  • Pulsed laser has been widely used in the division of nitride light-emitting diode chips, and solid-state lasers are generally available.
  • Q-switched Nd:YV04 laser or Nd:YAG laser which contains a harmonic frequency generator, such as LBO (lithium triborate), which causes nonlinear crystals of 1064 nm produced by a solid-state laser doped with germanium.
  • LBO lithium triborate
  • One of the second, third, fourth and fifth harmonic frequencies provides an output of the laser.
  • a third harmonic frequency of approximately 355 nanometers is provided.
  • the pulse wave has an energy density between about 10 and 100 joules per square centimeter, a pulse duration between about 10 and 30 nanoseconds, and a spot size between about 5 and 25 microns.
  • the repetition rate of the pulse wave is greater than 5 kHz, preferably in the range of about 10 kHz and 50 kHz or higher.
  • the sapphire substrate moves at a rate of motion, causing the pulse waves to overlap in an amount of 50 to 99 percent.
  • the depth of the scribe line can be precisely controlled.
  • the depth of the scribing cut is in the range of about 35 microns to 60 microns.
  • the height difference between the concave and convex patterns is within 20 ⁇ m.
  • the beam diameter of the laser is generally smaller than the area of the sapphire substrate after flip-chip bonding, so the area of the substrate needs to be scanned.
  • the output power of the laser also changes the depth of the sapphire substrate surface; or when the laser is operated at the same driving current, if the scanning rate is increased, the scoring depth is reduced, if the scanning rate is reduced, the scoring depth is reduced. increase. This method does not require a lithography process and can produce a regular pattern.
  • Pulsed laser projection roughening sapphire substrate As shown in Fig. 2, using the above laser device 36, the combination of the ultraviolet lens and the laser beam completely covers the inverted sapphire substrate, and the energy of the beam The distribution is uniform or uneven to produce the desired roughened structure.
  • the combination of UV lenses is shown in Figure 2: First, the first UV lens 38 uniformly expands the laser beam, and a second UV lens 40 is provided at the laser beam slightly larger than the area of the sapphire substrate. The second UV lens will The beam of the laser light is converted into parallel light, and the third ultraviolet lens 42 is distributed with a fine prism structure.
  • the fine prism structure may be composed of a fine or irregularly arranged fine structure that is convex or concave.
  • the lasers in each small area are respectively refracted, so when the laser beam is projected on the sapphire substrate, uniform (corresponding to regular fine structure) or uneven (corresponding to irregularities) is formed.
  • the intensity distribution of the fine structure) further forms a roughened structure on the surface of the sapphire substrate.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un substrat (16) d'une diode électroluminescente (DEL) au nitrure à connexion par billes. Au moins une des surfaces supérieure et inférieure du substrat (16) est une surface rugueuse. La surface rugueuse peut être fabriquée par un procédé parmi cinq. L'invention concerne également une puce de composant de DEL (10) présentant le substrat (16) pourvu de la surface rugueuse. La sortie de lumière et l'efficacité lumineuse de la DEL au nitrure à connexion par billes sont améliorées, la température globale de la DEL est abaissée, et la fiabilité du produit est améliorée.
PCT/CN2012/086086 2012-07-16 2012-12-06 Diode électroluminescente au nitrure à connexion par billes et son substrat de transmission de lumière, et leur procédé de fabrication WO2014012322A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2012102473180A CN102769083A (zh) 2012-07-16 2012-07-16 倒装焊氮化物发光二极管及其透光衬底和制造方法
CN201210247318.0 2012-07-16

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CN102769083A (zh) * 2012-07-16 2012-11-07 江苏扬景光电有限公司 倒装焊氮化物发光二极管及其透光衬底和制造方法
FR3001334B1 (fr) * 2013-01-24 2016-05-06 Centre Nat De La Rech Scient (Cnrs) Procede de fabrication de diodes blanches monolithiques
CN103311385B (zh) * 2013-05-21 2014-09-03 严敏 一种直接贴焊的半导体发光共晶晶片的制造方法
CN105679925B (zh) * 2014-11-21 2019-01-22 环视先进数字显示无锡有限公司 显示用红色led直接焊接晶片的制备方法和晶片
CN104538514B (zh) * 2014-12-31 2017-07-11 杭州士兰微电子股份有限公司 倒装led芯片结构及其制作方法
CN104900789A (zh) * 2015-06-19 2015-09-09 佛山市国星半导体技术有限公司 倒装led芯片及其制作方法
CN106997916A (zh) * 2017-04-17 2017-08-01 山东大学 一种基于纳米划痕技术提高led光提取效率的方法及应用
CN109524527A (zh) * 2018-11-30 2019-03-26 广东德力光电有限公司 一种倒装红光led芯片结构及其制备方法
CN113054064B (zh) * 2021-03-22 2022-04-22 华南师范大学 高外量子效率的深紫外led及其制备方法

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