WO2014006898A1 - 磁気センサ - Google Patents
磁気センサ Download PDFInfo
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- WO2014006898A1 WO2014006898A1 PCT/JP2013/004136 JP2013004136W WO2014006898A1 WO 2014006898 A1 WO2014006898 A1 WO 2014006898A1 JP 2013004136 W JP2013004136 W JP 2013004136W WO 2014006898 A1 WO2014006898 A1 WO 2014006898A1
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- magnetic sensor
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- magnetization fixed
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 230000005415 magnetization Effects 0.000 claims description 130
- 230000005294 ferromagnetic effect Effects 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 8
- 230000035699 permeability Effects 0.000 claims description 7
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- 230000005293 ferrimagnetic effect Effects 0.000 claims description 5
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- 239000010410 layer Substances 0.000 description 407
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- 230000001681 protective effect Effects 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 3
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- 229910052802 copper Inorganic materials 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 241000255777 Lepidoptera Species 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- the present disclosure relates to a magnetic sensor for measuring an application direction of an external magnetic field.
- a multilayer magnetic device 1 such as a TMR element or a GMR element includes a free layer 1a in which the magnetization direction Ha follows the external magnetic field H, a pinned layer 1b in which the magnetization direction Hb is fixed, a free layer 1a, and a pinned layer.
- the intermediate layer 1c is a tunnel film
- the intermediate layer 1c is a nonmagnetic film.
- the resistance value between the free layer 1a and the pinned layer 1b changes depending on the spin state of the free layer 1a and the pinned layer 1b. That is, the resistance value between the free layer 1a and the pinned layer 1b varies depending on the angle between the magnetization direction Ha of the free layer 1a and the magnetization direction Hb of the pinned layer 1b. For this reason, the application direction (application angle) of the external magnetic field H can be measured by measuring the value of the current flowing through the intermediate layer 1c between the free layer 1a and the pinned layer 1b.
- the applied angle is zero degrees, and the magnetization directions Ha and Hb are in the same direction.
- the application angle is +180 deg and ⁇ 180 deg.
- the resistance value is maximized, and when the applied angle is +180 deg and ⁇ 180 deg, the resistance value is minimized.
- the magnetization direction of the pinned layer 1b of the multilayer magnetic device 1 needs to be fixed with respect to the external magnetic field H, it is necessary to select a material having a large coercive force.
- a permanent magnet material such as NdFeB or SmCo
- a leakage magnetic field due to magnetization polarization is generated from the end face of the magnet (see arrow MF1 in FIG. 28).
- the leakage magnetic field affects the free layer 1a, the magnetization direction Ha of the free layer 1a deviates from the ideal direction (the direction of the dashed arrow, that is, the direction of the external magnetic field H) (for example, the direction of the solid arrow Ha). An error occurs (see FIG. 28).
- a structure composed of an antiferromagnetic layer 3d and a laminated ferri layer 2 is generally used for the pinned layer 1b (in a magnetic head, a magnetic sensor, etc.).
- the laminated ferri layer 2 has a structure in which a nonmagnetic film 3c is sandwiched between two magnetic films 3a and 3b. For this reason, in the laminated ferri layer 2, a magnetic exchange interaction works, and the magnetization directions Hc1 and Hc2 of the magnetic films 3a and 3b are stabilized in a 180-degree inverted state.
- the antiferromagnetic material 3d has an effect of fixing the magnetization at the film interface in one direction.
- the coercive force is increased by utilizing the two effects of the antiferromagnetic material 3 d and the laminated ferri layer 2, and the pinned layer 1 b is stabilized against the external magnetic field H. It is also known that the magnetic field leaking from the end face of the laminated ferri layer 2 is canceled if the magnetizations of the two magnetic films 3a and 3b of the laminated ferri layer 2 are made comparable (see arrow MF2). For that purpose, it is indispensable to control the film thicknesses of the two magnetic films 3a and 3b so that the film thicknesses of the two films are equal.
- each of the magnetic films 3a and 3b of the laminated ferri layer 2 is very thin, on the order of several nm. Further, it is known that the film thickness of the nonmagnetic film 3c is even thinner and is on the order of sub-nm. Therefore, as described above, controlling the film thickness of the magnetic films 3a and 3b to align the magnetizations of the magnetic films 3b and 3c, and forming the film thickness of the nonmagnetic film 3c with good controllability, very difficult.
- the present disclosure aims to provide a magnetic sensor in which the shape of the magnetization fixed layer is devised so that the leakage magnetic field from the magnetization fixed layer is prevented from affecting the ferromagnetic layer. .
- the magnetization fixed layer that is mounted on one surface side of the substrate and whose magnetization direction is fixed parallel to the surface direction of the substrate, and opposite to the substrate with respect to the magnetization fixed layer And a magnetization direction of the magnetization fixed layer and a magnetization direction of the ferromagnetic layer sandwiched between the magnetization fixed layer and the ferromagnetic layer.
- a nonmagnetic intermediate layer whose resistance value varies depending on the angle between the magnetic sensor and the magnetic sensor for measuring the applied angle of the external magnetic field based on the resistance value between the magnetization fixed layer and the ferromagnetic layer.
- the layer is characterized by having a curved portion having a curved cross section in which the first end and the second end in the plane direction of the plane portion having the plane direction parallel to the plane direction of the substrate are respectively bent.
- the magnetization fixed layer has a curved portion having a curved cross section in which the first end and the second end in the plane direction of the plane portion are respectively bent. For this reason, the leakage magnetic field from the magnetization fixed layer can remove the ferromagnetic layer and form a closed loop. Therefore, it is possible to suppress the influence of the leakage magnetic field from the magnetization fixed layer on the ferromagnetic layer.
- the magnetization fixed layer that is mounted on one surface side of the substrate and whose magnetization direction is fixed parallel to the surface direction of the substrate, and opposite to the substrate with respect to the magnetization fixed layer And a magnetization direction of the magnetization fixed layer and a magnetization direction of the ferromagnetic layer sandwiched between the magnetization fixed layer and the ferromagnetic layer.
- a magnetic sensor having a nonmagnetic intermediate layer whose resistance value varies depending on the angle between the two, and measuring the application angle of the external magnetic field based on the resistance value between the magnetization fixed layer and the ferromagnetic layer, and facing each other La> is a dimension between both side end portions of the first side of the rectangle having the first and second sides
- Lb is a dimension between both side end portions of the second side of the rectangle. That the cross-sectional shape of the magnetization fixed layer is changed to a shape obtained by deforming the rectangle so as to satisfy Lb And butterflies.
- the cross-sectional shape of the magnetization fixed layer is in a shape obtained by deforming the rectangle so that La> Lb is satisfied. For this reason, the leakage magnetic field from the magnetization fixed layer can remove the ferromagnetic layer and form a closed loop. Therefore, it is possible to suppress the influence of the leakage magnetic field from the magnetization fixed layer on the ferromagnetic layer.
- the magnetic sensor is provided on the outer circumferential side of the columnar base material and the base material, has a cross-sectional ring shape, and is arranged in a circumferential direction around the axis of the base material.
- the magnetization fixed layer is formed in a cross-sectional ring shape. For this reason, the magnetic field can form a closed loop in the magnetization fixed layer. Therefore, it is possible to suppress the influence of the leakage magnetic field from the magnetization fixed layer on the ferromagnetic layer.
- the magnetic sensor is provided on the outer peripheral side of the cylindrical base material and the base material, has a cross-sectional ring shape, and is arranged in a circumferential direction around the axis of the base material.
- the magnetization fixed layer is formed in a cross-sectional ring shape. For this reason, the magnetic field can form a closed loop in the magnetization fixed layer. Therefore, it is possible to suppress the influence of the leakage magnetic field from the magnetization fixed layer on the ferromagnetic layer.
- FIG. 1 is a figure which shows the cross-sectional structure of the magnetic sensor in 1st Embodiment of this indication
- FIG. 1 is a figure which shows the cross-sectional structure of the magnetic sensor in 1st Embodiment of this indication
- FIG. 1 is a figure which shows the detailed cross-sectional structure of the magnetic sensor in 1st Embodiment.
- FIG. 1 shows the equivalent circuit of the magnetic sensor in 1st Embodiment.
- A)-(e) is a figure which shows the manufacturing process of the magnetic sensor in 1st Embodiment.
- (A)-(d) is a figure which shows the manufacturing process of the magnetic sensor in 1st Embodiment. It is a figure showing the section composition of the magnetic sensor in a 2nd embodiment of this indication. It is a top view of the magnetic sensor in 2nd Embodiment.
- (A), (b) is a figure for demonstrating the cross-sectional shape of the magnetic sensor in 2nd Embodiment. It is a figure showing the section composition of the magnetic sensor in a 3rd embodiment of this indication.
- (A) is a figure which shows the cross-sectional structure of the magnetic sensor in 4th Embodiment of this indication
- (b) is an expanded sectional view of the XIB part of (a).
- (A) is sectional drawing of the magnetic sensor in 11th Embodiment of this indication
- (b) is a top view of the magnetic sensor in 11th Embodiment.
- (A) is a figure which shows the cross-sectional structure of the magnetic sensor in 12th Embodiment of this indication
- (b) is a perspective view of the magnetic sensor in 12th Embodiment.
- (A) is sectional drawing which shows the state by which the base material of the magnetic sensor in 13th Embodiment of this indication is not rounded
- (b) is sectional drawing which shows the state by which the base material of (a) was rounded off It is.
- (A)-(d) is a figure which shows the board
- (A)-(c) is a figure which shows the board
- (A)-(d) is a figure which shows the board
- (A)-(d) is a figure which shows the board
- FIG. 1A is a schematic cross-sectional view of a magnetic sensor 10 of this embodiment.
- FIG.1 (b) is an enlarged view of the IB part in Fig.1 (a).
- FIG. 2 is a plan view of the magnetic sensor 10 of the present embodiment.
- FIG. 3 shows a detailed sectional view of the magnetic sensor 10 of the present embodiment.
- the magnetic sensor 10 includes a substrate 11, an insulating layer 12, a protrusion 13, a wiring layer 14, a pin layer 15, a tunnel layer 16, and free layers 17a and 17b. It is composed of As shown in FIG. 3, the magnetic sensor 10 is provided with a protective film 18 and wiring layers 19a and 19b.
- the substrate 11 is a thin plate member made of, for example, a silicon wafer.
- the insulating layer 12 is made of an electrically insulating material such as SiO 2 or SiN, and is disposed on the one surface 11 a side of the substrate 11.
- the protrusion 13 is disposed on the side opposite to the substrate 11 with respect to the insulating layer 12 and is formed in a convex cross section protruding in the plate thickness direction.
- the protrusion 13 includes a first protrusion layer 13a and a second protrusion layer 13b.
- the protruding layer 13 a is formed in a convex shape in cross section that protrudes in the thickness direction with respect to the insulating layer 12.
- the protruding layer 13b is formed in a curved cross section so as to cover the protruding layer 13a from the side opposite to the substrate 11 with respect to the insulating layer 12. That is, the outline on the opposite side of the substrate 11 in the cross section of the protrusion 13 is formed in a curved shape.
- the protrusion layers 13a and 13b of the present embodiment are made of an electrically insulating material such as SiO 2 or SiN, or a conductive metal material such as Cu.
- the wiring layer 14 is disposed on the opposite side of the substrate 11 with respect to the insulating layer 12, and has a shape including a curved portion 14a and protruding portions 14b and 14c.
- the curved portion 14a is formed in a curved cross section so as to cover the protruding portion 13 from the side opposite to the substrate 11 with respect to the protruding portion 13.
- the protruding portion 14 b is formed so as to protrude from the curved portion 14 a along the insulating layer 12 to one side P ⁇ b> 1 in the surface direction P of the substrate 11.
- the protrusion 14c is formed so as to protrude from the curved portion 14a along the insulating layer 12 to one side P1 opposite to the one side P1 in the plane direction P (that is, the other side in the plane direction).
- the wiring layer 14 of this embodiment is made of a conductive metal material such as Cu or Al.
- the pinned layer 15 is a magnetization fixed layer whose magnetization direction is fixed.
- the magnetization direction of the pinned layer 15 is set in a direction parallel to the surface direction P of the substrate 11.
- the surface direction P of the substrate 11 is a direction in which the substrate 11 spreads, and corresponds to a direction parallel to the surface of the substrate 11.
- the plate thickness direction corresponds to a direction orthogonal to the surface direction P of the substrate 11.
- the pinned layer 15 is disposed on the side opposite to the substrate 11 with respect to the insulating layer 12, and has a shape including a curved portion 15A and protruding portions 15b and 15c.
- the curved portion 15 ⁇ / b> A is formed in a curved cross section covering the wiring layer 14 from the side opposite to the substrate 11 with respect to the wiring layer 14.
- the curved portion 15 ⁇ / b> A includes a portion on the one side (first end) and a portion on the other side (second end) of the plane portion 15 a where the plane direction is formed in parallel to the plane direction P of the substrate 11. Each is bent to the substrate 11 side (that is, the side opposite to the free layers 17a and 17b).
- the protruding portion 15b is formed so as to protrude from the curved portion 15A to the one side P1 in the surface direction along the protruding portion 13b of the wiring layer 14.
- the projecting portion 15c is formed so as to project from the curved portion 15A along the projecting portion 14c of the wiring layer 14 to the side P2 opposite to the surface direction one side P1 (that is, the other surface direction side).
- the pinned layer 15 of the present embodiment includes an antiferromagnetic layer 15d and a laminated ferrimagnetic layer 15e.
- the antiferromagnetic layer 15d is made of an antiferromagnetic material, and is disposed on the wiring layer 14 side.
- the laminated ferri layer 15e includes a magnetic layer 15g disposed on the antiferromagnetic layer 15d side, a magnetic layer 15f disposed on the opposite side of the antiferromagnetic layer 15d with respect to the magnetic layer 15g, and magnetic layers 15f and 15g.
- the nonmagnetic layer 15h is disposed between them.
- the tunnel layer 16 is a nonmagnetic intermediate layer formed so as to cover the pinned layer 15 from the side opposite to the substrate 11 with respect to the pinned layer 15.
- the free layers 17a and 17b are ferromagnetic layers in which the magnetization direction changes following an external magnetic field.
- the size of the free layer 17a in the surface direction P is set to be smaller than the size of the pinned layer 15 in the surface direction P.
- the size of the free layer 17b in the surface direction P is set to be smaller than the size of the pinned layer 15 in the surface direction P.
- the free layers 17a and 17b of the present embodiment are mounted on a portion of the tunnel layer 16 corresponding to the flat portion 15a of the pinned layer 15.
- the wiring layers 19 a and 19 b are formed so as to cover the protective film 18 from the side opposite to the substrate 11.
- the wiring layer 19a is disposed on one side P1 in the plane direction and is connected to the free layer 17a.
- the wiring layer 19b is disposed on the other side P2 in the plane direction and is connected to the free layer 17b.
- the wiring layers 19a and 19b of the present embodiment are made of a conductive metal material such as Cu or Al.
- FIG. 4 shows an equivalent circuit of the magnetic sensor 10 of the present embodiment.
- the free layer 17a is connected to the power supply Vcc.
- the free layer 17b is connected to the ground. Therefore, the free layer 17a, the pinned layer 15, and the tunnel layer 16 constitute a TMR element (TunnelingunMagneto Resistance) 20, and the free layer 17b, the pinned layer 15, and the tunnel layer 16 constitute a TMR element 21.
- the TMR elements 20 and 21 are connected in series between the power supply Vcc and the ground.
- FIGS. 5A to 5E and FIGS. 6A to 6D are diagrams showing a manufacturing process of the magnetic sensor 10.
- an insulating layer 12 is formed on the one surface 11a side of the substrate 11 (see FIG. 5A).
- a manufacturing method of the insulating layer 12 thermal oxidation, CVD, sputtering, or the like is used.
- a protruding layer 13A is formed on the insulating layer 12 (see FIG. 5B).
- thermal oxidation, CVD, or sputtering is used as a method of manufacturing the protruding layer 13A.
- the protrusion layer 13A is subjected to photolithography, etching (for example, milling, RIE), etc., and an excess region is removed from the protrusion layer 13A to form the protrusion layer 13a. (See FIG. 5 (c)).
- the protruding layer 13B is formed so as to cover the insulating layer 12 and the protruding layer 13a (see FIG. 5D).
- the protrusion layer 13B is subjected to photolithography, etching (for example, milling, RIE), etc., and an excess region is removed from the protrusion layer 13B to form the protrusion layer 13b. (See FIG. 5 (e)).
- the wiring layer 14 is formed so as to cover the protruding layer 13b and the insulating layer 12 (see FIG. 6A).
- a pinned layer 15, a tunnel layer 16, and a free layer 17A are formed on the opposite side of the wiring layer 14 from the substrate 11, respectively.
- photolithography and etching are performed to pattern the pinned layer 15, the tunnel layer 16, and the free layer 17A, respectively (see FIG. 6B).
- the patterned free layer 17A is subjected to photolithography, etching (for example, milling, RIE), etc., to remove an extra region in the free layer 17A and free it.
- the layers 17a and 17b are respectively formed (see FIG. 6C).
- a protective film 18 is formed by sputtering or the like so as to cover each of the wiring layer 14, the tunnel layer 16, and the free layers 17a and 17b (FIG. 6D).
- contact holes 18a and 18b are formed in the protective film 18 by dry etching, wet etching, or the like. The contact holes 18a and 18b are formed toward the free layers 17a and 17b. Further, the contact holes 18a and 18 are filled with a conductive material to form wiring layers 19a and 19b, respectively.
- the TMR elements 20 and 21 can be formed. Thereafter, the pinned layer 15 common to the TMR elements 22 and 21 is magnetized to set the magnetization direction.
- the pinned layer 15 includes the curved portion 15A having a curved cross section that covers the wiring layer 14 from the side opposite to the substrate 11 with respect to the wiring layer 14.
- the free layers 17 a and 17 b are disposed on the opposite side of the substrate 11 with respect to the pinned layer 15.
- the size in the surface direction P of the free layers 17 a and 17 b is set to be smaller than the size in the surface direction P of the pinned layer 15. For this reason, the leakage magnetic field from the pinned layer 15 (see the thick line arrow in FIG. 1) can form a closed loop on the substrate 11 side (that is, on the side opposite to the free layers 17a and 17b with respect to the pinned layer 15). . Therefore, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed. Therefore, the magnetization directions of the free layers 17a and 17b change following the external magnetic field.
- the resistance value between the free layer 17 a and the pinned layer 15 varies depending on the angle between the magnetization direction of the free layer 17 a and the magnetization direction of the pinned layer 15.
- the resistance value between the free layer 17 b and the pinned layer 15 changes depending on the angle between the magnetization direction of the free layer 17 b and the pinned layer 15. For this reason, the direction of the external magnetization applied to the magnetic sensor 10 can be measured by measuring the current flowing through the TMR elements 20 and 21 between the power supply Vcc and the ground.
- the cross-sectional shape of the pinned layer 15 is formed to include the protruding portions 15b and 15c protruding from the curved portion 15A to the one side P1 and the other side P2 in the surface direction has been described.
- the cross-sectional shape of the pinned layer 15 is changed from the side opposite to the substrate 11 to the wiring layer 14 without using the protrusions 15b and 15c. Make it curved. That is, the pinned layer 15 includes only the curved portion 15A.
- the leakage magnetic field from the pinned layer 15 see the thick line arrow in FIG.
- FIG. 7 is a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment.
- the same reference numerals as those in FIG. FIG. 8 shows a plan view of the magnetic sensor 10 of the present embodiment.
- the cross-sectional shape of the pinned layer 15 may be defined as follows.
- FIG. 9A the dimension between both end portions of the first side 101 of the rectangle 100 having the first side 101 and the second side 102 facing each other is La, and the second of the rectangle 100 is set.
- a shape obtained by deforming the rectangle 100 so as to satisfy La> Lb is defined as a cross-sectional shape of the pinned layer 15.
- FIG. 9B shows a rectangular shape in which both end portions of the rectangle 100 are bent.
- FIG. 10 shows a cross-sectional view of the magnetic sensor 10 of the present embodiment. 10, the same reference numerals as those in FIG. 7 denote the same elements.
- a nonmagnetic layer 16a instead of the tunnel layer 16 in FIG. 7 is used. Therefore, the free layer 17a, the nonmagnetic layer 16a, and the pinned layer 15 constitute a first GMR element, and the free layer 17b, the nonmagnetic layer 16a, and the pinned layer 15 constitute a second GMR element. become.
- FIG. 11A shows a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment.
- FIG.11 (b) is an enlarged view of the XIB part in Fig.11 (a).
- the same reference numerals as those in FIG. 11A the same reference numerals as those in FIG. 11A.
- the high coercive force material constituting the pinned layer 15X of the present embodiment is a material having a coercive force higher than that of the free layers 17a and 17b.
- a permanent magnet is used.
- the pinned layer 15X can be composed of a single layer made of a high coercive force material. For this reason, it becomes easy to manufacture a magnetic sensor, and it is possible to realize a reduction in film formation cost and an improvement in throughput.
- the pinned layer 15X can be configured by a single layer made of a high coercive force material. For this reason, even if heat treatment is performed, there is no possibility of mutual diffusion in the pinned layer 15, and the heat treatment can be performed at a high temperature.
- FIG. 12 is a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment. 12, the same reference numerals as those in FIG. 7 denote the same components.
- FIG. 13 is a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment. 13, the same reference numerals as those in FIG. 7 denote the same components.
- a protrusion 13 made of a conductive material is used.
- the protrusion 13 can fulfill the function of the wiring layer. Therefore, the magnetization direction Hd can be set with respect to the pinned layer 15 by the magnetic field generated by passing the current I in the direction perpendicular to the paper surface in FIG.
- FIG. 15 is a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment. 15, the same reference numerals as those in FIG. 14 denote the same components.
- a recess 11 c is formed at a location corresponding to the wiring layer 14, the pinned layer 15, and the tunnel layer 16.
- the recess 11c is formed so as to open to the wiring layer 14 side.
- a high permeability member 11d made of a high permeability material is disposed in the recess 11c.
- the high magnetic permeability member 11d constitutes a magnetic field path (see FIG. 15, solid line arrow) through which the magnetic field leaking from the pinned layer 15 passes. Therefore, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be further suppressed.
- the pinned layer 15 (15X) includes a part on the one side (first end) and a part on the other side (second end) in the plane direction P of the plane part 15a.
- the pinned layer 15 (15X) one side in the plane direction P of the plane portion 15a is used. An example in which the portion (first end portion) and the other side portion (second end portion) are curved in a cross-section that bends toward the free layers 17a and 17b will be described.
- FIG. 16 is a schematic cross-sectional view of the magnetic sensor 10 of the present embodiment. 16, the same reference numerals as those in FIG. 14 denote the same components.
- a recess 11e is formed on one surface 11a of the substrate 11 of the present embodiment.
- the inner surface of the recess 11e has a curved cross section.
- the wiring layer 14 is formed in a thin film shape along the inner surface of the recess 11 e of the substrate 11.
- the pinned layer 15 is formed in a thin film shape along the wiring layer 14.
- the pinned layer 15 is formed in a cross-sectional curved shape in which a portion on one side and a portion on the other side in the plane direction P of the plane portion 15 a are bent to the opposite side to the substrate 11.
- the tunnel layer 16 is formed in a thin film shape along the pinned layer 15. Free layers 17 a and 17 b are disposed on the opposite side of the tunnel layer 16 from the pinned layer 15.
- the free layers 17a and 17b are disposed in the recess 11e.
- One side portion and the other side portion in the surface direction P of the pinned layer 15 are directed to one side T1 in the plate thickness direction T of the substrate 11, respectively.
- the one side T1 in the plate thickness direction T is the direction from the substrate 11 toward the free layers 17a and 17b in the plate thickness direction of the substrate 11. For this reason, a magnetic field leaking from the pinned layer 15 can form a path on one side (upper side in the figure) in the thickness direction T with respect to the free layers 17a and 17b. Therefore, as in the first embodiment, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed.
- T2 indicates the side opposite to the one side T1 in the thickness direction T.
- FIG. 17 is a cross-sectional view of the magnetic sensor 10 of the present embodiment. 17, the same reference numerals as those in FIG. 16 denote the same components.
- the wiring layer 14 of the present embodiment protrudes from the curved portion 14a to the one side P1 in the surface direction P along the substrate 11 from the curved portion 14a along the inner surface of the concave portion 11e of the substrate 11 and the curved portion 14a. And a protruding portion 14c protruding from the curved portion 14a along the substrate 11 to the other side P2 in the surface direction P.
- the pinned layer 15 includes a curved portion 15A and projecting portions 15b and 15c.
- the curved portion 15 ⁇ / b> A is formed in a curved cross section covering the wiring layer 14 from the side opposite to the substrate 11 with respect to the wiring layer 14.
- the curved portion 15A includes one side portion (first end portion) and the other side portion (second end portion) in the plane direction P of the plane portion 15a in which the plane direction is formed in parallel to the plane direction P of the substrate 11. ) Are bent to the one surface 11 a side of the substrate 11.
- the protruding portion 15b is formed so as to protrude from the curved portion 15A to the one side P1 in the plane direction P along the protruding portion 14b of the wiring layer 14.
- the protruding portion 15 c is formed so as to protrude from the curved portion 15 A to the other side P 2 in the plane direction P along the protruding portion 14 c of the wiring layer 14.
- the tunnel layer 16 is formed in a curved shape along the pinned layer 15. Similar to the first embodiment, the free layers 17a and 17b are disposed on the opposite side of the tunnel layer 16 from the pinned layer 15 in the recess 11e.
- the pinned layer 15 includes the curved portion 15 ⁇ / b> A that is formed in a cross-sectional curved shape that covers the wiring layer 14 from the side opposite to the substrate 11 with respect to the wiring layer 14. Therefore, similarly to the first embodiment, a magnetic field leaking from the pinned layer 15 can form a path on one side T1 (upper side in the drawing) in the plate thickness direction T with respect to the free layers 17a and 17b. Therefore, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed.
- FIG. 18A shows a cross-sectional view of the magnetic sensor 10 of the present embodiment.
- FIG. 18B shows a plan view of the magnetic sensor 10 of the present embodiment.
- 18A and 18B the same reference numerals as those in FIG. 1 denote the same components.
- the magnetic sensor 10 includes a substrate 11, an insulating layer 12, a wiring layer 14, a pinned layer 15, a tunnel layer 16, and free layers 17a and 17b.
- the wiring layer 14 of this embodiment is laminated on the opposite side of the substrate 11 with respect to the insulating layer 12.
- the pin layer 15 is stacked on the wiring layer 14.
- the tunnel layer 16 is stacked on the pinned layer 15.
- the free layers 17 a and 17 b are arranged on the tunnel layer 16.
- the wiring layer 14, the pinned layer 15, and the tunnel layer 16 are each formed in a curved shape that curves in the surface direction P of the substrate 11 when viewed from the perpendicular direction.
- the perpendicular direction is a direction orthogonal to the surface direction P of the substrate 11 and corresponds to the plate thickness direction T.
- the wiring layer 14, the pinned layer 15, and the tunnel layer 16 each have a curved portion in which the cross-sectional shape of the substrate 11 in the plane direction P is curved.
- the tunnel layer 16 includes one side portion (first end portion) 161 and the other side portion in the plane direction P of the plane portion 160 in which the plane direction is formed in parallel to the plane direction P of the substrate 11.
- the (second end) 162 is formed in a U-shape that is bent in parallel with the surface direction P.
- the wiring layer 14 and the pinned layer 15 are similarly formed in a U shape. Therefore, the leakage magnetic field from the pinned layer 15 (see the thick arrow in FIG. 18B) can avoid the free layers 17a and 17b and form a closed loop. Therefore, similarly to the first embodiment, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed. Therefore, the magnetization directions of the free layers 17a and 17b change following the external magnetic field.
- FIG. 19A shows a cross-sectional view of the magnetic sensor 10 of the present embodiment.
- FIG. 19B shows a plan view of the magnetic sensor 10 of the present embodiment.
- 19A and 19B the same reference numerals as those in FIG. 1 denote the same components.
- the magnetic sensor 10 includes a substrate 11, an insulating layer 12, a wiring layer 14, a pin layer 15, a tunnel layer 16, and free layers 17a and 17b.
- the wiring layer 14, the pinned layer 15, and the tunnel layer 16 are each formed in a C shape that is curved in the surface direction P of the substrate 11 when viewed from the direction perpendicular to the surface. That is, in the wiring layer 14, the pinned layer 15, and the tunnel layer 16, the cross-sectional shape in the surface direction P of the substrate 11 is formed in a C shape. Also in this case, as in the tenth embodiment, the pinned layer 15 has a curved cross section in which the first end and the second end are bent in parallel to the surface direction P of the substrate 11 with respect to the center. It will have a part. Therefore, the leakage magnetic field from the pinned layer 15 (see the thick arrow in FIG. 18) can avoid the free layers 17a and 17b and form a closed loop. Similar to the tenth embodiment, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed.
- FIG. 20A is a cross-sectional view of the magnetic sensor 10 of the present embodiment.
- FIG. 20B is a perspective view of the magnetic sensor 10 of the present embodiment.
- the magnetic sensor 10 includes a base 11A, a wiring layer 14, a pin layer 15, a tunnel layer 16, and free layers 17a and 17b.
- the base material 11 ⁇ / b> A is a member formed in a cylindrical shape from an electrically insulating material.
- the wiring layer 14 is made of a conductive metal material such as Cu or Al, and is formed in a cross-sectional ring shape on the outer peripheral side of the base material 11A.
- the pinned layer 15 is a magnetization fixed layer that is formed in a cross-sectional ring shape on the outer peripheral side of the wiring layer 14 and whose magnetization direction is fixed in the circumferential direction around the axis of the substrate 11A.
- the tunnel layer 16 is formed in a ring shape in cross section on the outer peripheral side of the pinned layer 15.
- the free layers 17a and 17b are ferromagnetic layers that are arranged on the outer peripheral side with respect to the tunnel layer 16 and change the magnetization direction following an external magnetic field. That is, the tunnel layer 16 is sandwiched between the pinned layer 15 and the free layers 17a and 17b, and the resistance value changes depending on the angle between the magnetization direction of the pinned layer 15 and the magnetization direction of the free layers 17a and 17b.
- a nonmagnetic intermediate layer is formed.
- the free layer 17a, the pinned layer 15, and the tunnel layer 16 constitute the TMR element 20, and the free layer 17b, the pinned layer 15, and the tunnel layer 16 constitute the TMR element 21. .
- the pinned layer 15 is formed in a cross-sectional ring shape on the outer peripheral side of the wiring layer 14.
- a magnetic field that is, a leakage magnetic field
- the free layers 17 a and 17 b are disposed on the outer peripheral side of the pinned layer 15. Therefore, similarly to the first embodiment, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed.
- FIG. 21A is a cross-sectional view of the magnetic sensor 10 according to this embodiment in which the base material 11B is not rounded.
- FIG. 21B is a cross-sectional view of a state in which the base material 11B of the magnetic sensor 10 of the present embodiment is rounded.
- the base material 11B of this embodiment is formed in a cylindrical shape. Specifically, a flexible printed circuit board is used as the base material 11B.
- the wiring layer 14, the pin layer 15, the tunnel layer 16, and the free layers 17a and 17b are provided on the flexible printed circuit board as the base material 11B.
- the laminated one is rounded and transformed into a cylindrical shape.
- the magnetic field forms a closed loop in the circumferential direction around the axis of the substrate 11A in the pinned layer 15 (see the solid line arrow in FIG. 21B).
- the free layers 17 a and 17 b are disposed on the outer peripheral side of the pinned layer 15. Therefore, similarly to the twelfth embodiment, the influence of the leakage magnetic field from the pinned layer 15 on the free layers 17a and 17b can be suppressed.
- FIGS. 22 (a) and 22 (b) the outline on the side opposite to the substrate 11 is formed in an arc shape in the cross section of the protrusion 13.
- FIG. 22A is a cross-sectional view showing the substrate 11 and the protrusion 13.
- FIG. 22B is a perspective view showing the substrate 11 and the protrusion 13.
- FIGS. 22 (c) and 22 (d) As shown in FIGS. 22 (c) and 22 (d), the cross section of the protrusion 13 is formed in a rectangular shape.
- FIG. 22C is a cross-sectional view showing the substrate 11 and the protrusion 13.
- FIG. 22D is a perspective view showing the substrate 11 and the protrusion 13.
- FIGS. 23A and 23B the cross section of the protrusion 13 is formed in a trapezoidal shape.
- FIG. 23A is a cross-sectional view showing the substrate 11 and the protrusion 13.
- FIG. 23B is a perspective view showing the substrate 11 and the protrusion 13.
- FIG. 23 (c) As shown in FIG. 23 (c), the protrusion 13 is formed in a bowl shape.
- FIG. 23C is a cross-sectional view showing the substrate 11 and the protrusion 13.
- the example in which the protrusion 13 is provided on the substrate 11 has been described, but instead of this, the following (5), (6), (7), (8)
- the one surface 11 a side of the substrate 11 may be formed in a protruding shape, and the protruding portion may be formed by the substrate 11.
- a protrusion having a semicircular cross section is formed by the substrate 11.
- the substrate 11 forms a protrusion having a rectangular cross section.
- the substrate 11 forms a trapezoidal cross-sectional protrusion.
- the substrate 11 forms a protrusion having a bowl-shaped cross section.
- the concave portion 11e whose inner surface has a curved cross-section is formed on the substrate 11 is described. Instead, the following (9), (10), (11 ) And (12), the recess 11e may be formed.
- a concave portion 11 e having a trapezoidal cross section is formed in the substrate 11.
- a recess 11 e having a cross-sectional surface is formed in the substrate 11.
- the concave portion 11e is formed in the substrate 11
- the concave portion 12a may be formed in the insulating layer 12 as shown in FIG.
- the wiring layer 14 is formed along the inner surface of the recess 12 a of the insulating layer 12.
- the pinned layer 15 is formed along the wiring layer 14. That is, the pinned layer 15 can be formed along the inner surface of the recess 12 a of the insulating layer 12 via the wiring layer 14.
- the pinned layer 15 (15X) can be formed in a curved cross section (see FIG. 16).
- the size in the surface direction P of the free layers 17a and 17b is set to be smaller than the size in the surface direction P of the pinned layer 15 is described.
- the size in the surface direction P of the free layers 17 a and 17 b may be set to the same size as the size in the surface direction P of the pinned layer 15.
- the example in which the two TMR elements 21 are configured in the magnetic sensor 10 has been described.
- the two GMR elements 21 may be configured in the magnetic sensor 10.
- the example in which two TMR elements (or two GMR elements) are configured in the magnetic sensor 10 has been described. Instead, one TMR element is used in the magnetic sensor 10. (Alternatively, one GMR element) may be configured. Alternatively, three or more TMR elements (or three or more GMR elements) may be configured.
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Abstract
Description
図1(a)は本実施形態の磁気センサ10の概略的な断面図を示す。図1(b)は図1(a)中のIB部分の拡大図である。図2は本実施形態の磁気センサ10の平面図を示す。図3は本実施形態の磁気センサ10の詳細な断面図を示す。
上記第1実施形態では、ピン層15の断面形状を、湾曲部15Aから面方向一方側P1および他方側P2に突出する突起部15b、15cを備える形状にした例について説明したが、これに代えて、図7、図8に示すように、本実施形態では、突起部15b、15cを用いずに、ピン層15の断面形状を、配線層14に対して基板11と反対側から配線層14を覆う湾曲状にする。すなわち、ピン層15は湾曲部15Aだけからなる。これにより、上記第1実施形態と同様に、ピン層15からの漏れ磁界(図7中の太線の矢印参照)が基板11側に閉ループを形成することができる。図7は、本実施形態の磁気センサ10の概略的な断面図を示す。図7において、図1(a)と同一符号は同一のものを示している。図8は、本実施形態の磁気センサ10の平面図を示す。
上記第1、2の実施形態では、磁気センサ10においてTMR素子20、21を構成した例について説明したが、これに代えて、本実施形態では、第1、第2のGMR素子(Giant Magneto Resistance;GMR)を構成する例について説明する。
上述の第1~3の実施形態では、反強磁性層15dおよび積層フェリ層15eから構成されるピン層15を用いた例について説明したが、これに代えて、図11(a)、(b)に示すように、高保磁力材料からなるピン層15Xを用いる例について説明する。
上記第4実施形態では、ピン層15Xを断面湾曲状に形成した例について説明したが、これに代えて、本実施形態では、図12に示すように、ピン層15Xとしては、上記第1実施形態と同様、湾曲部15A、および突起部15b、15cを備える形状にしてもよい。図12は、本実施形態の磁気センサ10の概略的な断面図を示す。図12において、図7と同一符号は同一のものを示している。
上記第1~4実施形態では、基板11とピン層15(15X)との間に突起部13と配線層14とを配置した例について説明したが、これに代えて、本実施形態では、突起部13により配線層を構成する例について説明する。図13は、本実施形態の磁気センサ10の概略的な断面図を示す。図13において、図7と同一符号は同一のものを示している。
本実施形態では、図15に示すように、基板11に高透磁率材料からなる高透磁率部材を埋め込むように構成する例について説明する。図15は本実施形態の磁気センサ10の概略的な断面図を示す。図15において、図14と同一符号は同一のものを示している。
上記第1~7の実施形態では、ピン層15(15X)としては、その平面部15aの面方向Pにおける一方側の部分(第1端部)および他方側の部分(第2端部)とがそれぞれ基板11側に曲がる形状のものを用いた例について説明したが、これに代えて、本実施形態では、ピン層15(15X)としては、その平面部15aの面方向Pにおける一方側の部分(第1端部)および他方側の部分(第2端部)とがフリー層17a、17b側に曲がる断面湾曲状のものを用いる例について説明する。
上記第8の実施形態では、ピン層15(15X)としては、断面湾曲状に形成した例について説明したが、これに代えて、本実施形態では、図17に示すように、ピン層15(15X)を形成する例について説明する。
上記第1~9の実施形態では、磁気センサ10のピン層15の断面形状を基板11の厚み方向(面方向に対する直交方向)に湾曲した形状にした例について説明したが、これに代えて、ピン層15の断面形状を基板11の面方向に湾曲した形状にした例について説明する。
上記第10実施形態では、磁気センサ10のピン層15の面方向の断面形状をコ字状にした例について説明したが、これに代えて、ピン層15の面方向の断面形状をC字状にした例について説明する。
上記第1~9の実施形態では、薄板状の基板11を用いて磁気センサ10を構成した例について説明したが、これに代えて、本実施形態では、円柱状に形成される基材を用いて磁気センサ10を構成した例について説明する。
上記第12実施形態では、円柱状に形成される基材を用いて磁気センサ10を構成した例について説明したが、これに代えて、本実施形態では、円筒状に形成される基材を用いて磁気センサ10を構成した例について説明する。
上記第1~第5の実施形態では、突起部13の断面のうち基板11と反対側の輪郭が湾曲状に形成されている例について説明したが、これに代えて、次の(1)、(2)、(3)、(4)のようにしてもよい。
Claims (22)
- 基板(11)の一面側に設けられて、前記基板の面方向に対して平行に磁化方向が固定されている磁化固定層(15、15X)と、
前記磁化固定層に対して前記基板と反対側に配置されて、外部磁場によって磁化方向が追従して変化する強磁性層(17a、17b)と、
前記磁化固定層と前記強磁性層との間に挟まれて前記磁化固定層の磁化方向と前記強磁性層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(16)とを備え、
前記磁化固定層と前記強磁性層との間の抵抗値に基づいて前記外部磁場の印加角度を測定する磁気センサであって、
前記磁化固定層は、前記基板の面方向に対して平行に面方向を有する平面部(15a)の面方向における第1端部および第2端部がそれぞれ曲げられた断面湾曲状の湾曲部を有することを特徴とする磁気センサ。 - 基板(11)の一面側に設けられて、前記基板の面方向に対して平行に磁化方向が固定されている磁化固定層(15、15X)と、
前記磁化固定層に対して前記基板と反対側に配置されて、外部磁場によって磁化方向が追従して変化する強磁性層(17a、17b)と、
前記磁化固定層と前記強磁性層との間に挟まれて前記磁化固定層の磁化方向と前記強磁性層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(16)とを備え、
前記磁化固定層と前記強磁性層との間の抵抗値に基づいて前記外部磁場の印加角度を測定する磁気センサであって、
前記磁化固定層は、互いに対向する第1、第2の辺(101、102)を有する長方形の前記第1の辺の両側端部の間の寸法をLaとし、前記長方形の前記第2の辺の両側端部の間の寸法をLbとしたとき、La>Lbを満たすように前記長方形を変形した形状の断面形状を有することを特徴とする磁気センサ。 - 前記磁化固定層の面方向のサイズと同一サイズ、或いは前記磁化固定層の面方向のサイズよりも小さいサイズに前記強磁性層における当該面方向のサイズが設定されていることを特徴とする請求項1または2に記載の磁気センサ。
- 前記磁化固定層は、
第1、第2の磁性体層(15f、15g)と前記第1、第2の磁性体層の間に挟まれる非磁性体層(15h)とを備える積層フェリ構造(15e)と、
前記基板と前記積層フェリ構造との間に配置される反強磁性体層(15d)とを備えることを特徴とする請求項1ないし3のいずれか1つに記載の磁気センサ。 - 前記磁化固定層(15X)は、前記強磁性層よりも高い保磁力を有する材料からなるものであることを特徴とする請求項1ないし3のいずれか1つに記載の磁気センサ。
- 前記基板には、その板厚方向に凹む凹部(11e)が形成されており、
前記磁化固定層の前記湾曲部は、前記凹部の内面に沿って設けられていることを特徴とする請求項1ないし5のいずれか1つに記載の磁気センサ。 - 前記基板の一面側には、その板厚方向に凹む凹部(12a)を有する絶縁層(12)が形成されており、
前記磁化固定層の前記湾曲部は、前記凹部の内面に沿って設けられていることを特徴とする請求項1ないし5のいずれか1つに記載の磁気センサ。 - 前記基板の一面側には、その板厚方向に突出する断面凸状に形成される突起部(13)が設けられており、
前記磁化固定層の前記湾曲部は、前記突起部に沿って設けられていることを特徴とする請求項1ないし5のいずれか1つに記載の磁気センサ。 - 前記突起部は、前記基板側から基板の面方向に直交する方向に断面凸形状に突出する第1突起層(13a)と、前記第1突起層を前記基板と反対側から覆うように設けられる第2突起層(13b)とから構成されることを特徴とする請求項8に記載の磁気センサ。
- 前記第1突起層は、電気絶縁材料からなるものであることを特徴とする請求項9に記載の磁気センサ。
- 前記第2突起層は、電気絶縁材料からなるものであることを特徴とする請求項9または10に記載の磁気センサ。
- 前記第1突起層は、導電性材料からなるものであることを特徴とする請求項9に記載の磁気センサ。
- 前記第2突起層は、導電性材料からなるものであることを特徴とする請求項9または10に記載の磁気センサ。
- 前記第1突起層(13a)は、前記基板の一面に沿って成形される第1の膜(13A)のうち前記第1突起層以外の余分な箇所をエッチングにより除去されて形成されたものであることを特徴とする請求項8ないし13のいずれか1つに記載の磁気センサ。
- 前記第2突起層(13b)は、前記基板および前記第1の膜をそれぞれ覆うように成形される第2の膜(13B)のうち前記第2突起層以外の余分な箇所をエッチングにより除去されて形成されたものであることを特徴とする請求項9ないし14のいずれか1つに記載の磁気センサ。
- 前記基板と前記磁化固定層との間には、前記基板よりも高い透磁率の材料からなり、かつ前記磁化固定層から漏れる磁界が通る磁界経路を構成する高透磁率部材(11d)が設けられていることを特徴とする請求項1ないし15のいずれか1つに記載の磁気センサ。
- 前記磁化固定層の前記湾曲部は、前記基板の面方向に平行に設けられ、前記平面部(15a)から曲げられる前記第1端部と前記第2端部は基板の面方向に平行に設けられていることを特徴とする請求項1に記載の磁気センサ。
- 円柱状の基材(11A)と、
前記基材の外周側に設けられ、断面リング状を有し、前記基材の軸線を中心とする円周方向に磁化方向が固定されている磁化固定層(15)と、
前記磁化固定層に対してその外周側に配置されて、外部磁場によって磁化方向が追従して変化する強磁性層(17a、17b)と、
前記磁化固定層と前記強磁性層との間に挟まれて前記磁化固定層の磁化方向と前記強磁性層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(16)とを備え、
前記磁化固定層と前記強磁性層との間の抵抗値に基づいて前記外部磁場の印加角度を測定することを特徴とする磁気センサ。 - 円筒状の基材(11B)と、
前記基材の外周側に設けられ、断面リング状を有し、前記基材の軸線を中心とする円周方向に磁化方向が固定されている磁化固定層(15)と、
前記磁化固定層に対してその外周側に配置されて、外部磁場によって磁化方向が追従して変化する強磁性層(17a、17b)と、
前記磁化固定層と前記強磁性層との間に挟まれて前記磁化固定層の磁化方向と前記強磁性層の磁化方向との間の角度によって抵抗値が変化する非磁性中間層(16)とを備え、
前記磁化固定層と前記強磁性層との間の抵抗値に基づいて前記外部磁場の印加角度を測定することを特徴とする磁気センサ。 - 前記基材は、フレキシブルプリント基板が円筒状に変形されたものであることを特徴とする請求項19に記載の磁気センサ。
- 前記磁化固定層、前記強磁性層、および前記非磁性中間層は、TMR素子を構成することを特徴とする請求項1ないし20のいずれか1つに記載の磁気センサ。
- 前記磁化固定層、前記強磁性層、および前記非磁性中間層は、GMR素子を構成することを特徴とする請求項1ないし20のいずれか1つに記載の磁気センサ。
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