WO2014005331A1 - 阵列基板的断线修补装置及修补方法 - Google Patents

阵列基板的断线修补装置及修补方法 Download PDF

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Publication number
WO2014005331A1
WO2014005331A1 PCT/CN2012/078316 CN2012078316W WO2014005331A1 WO 2014005331 A1 WO2014005331 A1 WO 2014005331A1 CN 2012078316 W CN2012078316 W CN 2012078316W WO 2014005331 A1 WO2014005331 A1 WO 2014005331A1
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Prior art keywords
repairing
wire
array substrate
line
repair
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PCT/CN2012/078316
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English (en)
French (fr)
Inventor
郑文达
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/641,746 priority Critical patent/US20140008345A1/en
Publication of WO2014005331A1 publication Critical patent/WO2014005331A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a wire break repairing device and a repairing method for an array substrate.
  • the liquid crystal display panel includes an array substrate and a color filter substrate, and the array substrate is provided with a large number of wires, such as data lines and scan lines.
  • the wire 10 has a wire break defect 11 in FIG. 1A, resulting in the wire 10 It cannot be turned on, and thus the function of transmitting signals cannot be realized.
  • the film is usually coated at the wire breakage defect 11 of the wire 10 by a wire break repairing machine, and the wire 12 is formed at the wire breakage defect to be turned on.
  • the wire 10 is shown in Figure 1B.
  • the existing wire break repairing machine and its repairing method can only repair the wire with the wire length of less than 100 micrometers. If the wire break length exceeds 100 micrometers, the array substrate will be regarded as a defective product and scrapped. , thereby affecting the manufacturing yield of the array substrate.
  • An object of the present invention is to provide a wire break repairing device for an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and affects the wire transmission signal after the wire is formed by the wire on the wire defect of the prior art. The ability to influence the technical length of the patch length.
  • the invention constructs a wire break repairing device for an array substrate, which comprises:
  • a repairing unit configured to form a repairing line at a wire breakage defect of the wire on the array substrate to turn on the wire;
  • a heating unit configured to generate a predetermined temperature on the surface of the repairing line to heat the repairing line formed by the repairing unit.
  • the repairing unit specifically includes:
  • a clearing module configured to remove a protective layer at both ends of the disconnection defect to expose both ends of the disconnection defect
  • a plating line module configured to form the repair line at the wire break defect by using a repair wire material to turn on the wire.
  • the repairing wire material is hexahydroxychromium.
  • the repairing wire material is hexahydroxy molybdenum.
  • the repairing wire material is hexahydroxy tungsten.
  • the heating unit is further configured to heat the repairing line formed by the repairing unit by using a laser beam heating method.
  • the predetermined temperature is greater than a melting point of the repairing wire material and less than a boiling point of the repairing wire material.
  • Another object of the present invention is to provide a wire break repairing device for an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed at the wire defect of the wire in the prior art.
  • the ability to influence the technical length of the patch length is to provide a wire break repairing device for an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed at the wire defect of the wire in the prior art.
  • the present invention constructs a wire break repairing device for an array substrate, comprising:
  • a repairing unit configured to form a repairing line at a wire breakage defect of the wire on the array substrate;
  • a heating unit configured to heat the repair line formed by the repair unit.
  • the repairing unit specifically includes:
  • a clearing module configured to remove a protective layer at both ends of the disconnection defect to expose both ends of the disconnection defect
  • a plating line module configured to form the repair line at the wire break defect by using a repair wire material to turn on the wire.
  • the repairing wire material is hexahydroxychromium.
  • the repairing wire material is hexahydroxy molybdenum.
  • the repairing wire material is hexahydroxy tungsten.
  • the heating unit is further configured to heat the repairing line formed by the repairing unit by using a laser beam heating method.
  • the heating unit is further configured to generate a preset temperature on the surface of the repairing line, wherein the preset temperature is greater than a melting point of the repairing wire material and smaller than the repairing wire material. Boiling point.
  • Another object of the present invention is to provide a method for repairing a wire breakage of an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed by the wire on the wire breakage defect in the prior art.
  • the ability to influence the technical length of the patch length is to provide a method for repairing a wire breakage of an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed by the wire on the wire breakage defect in the prior art.
  • the present invention constructs a wire break repair method for an array substrate, the method comprising the following steps:
  • the formed repair line is heated.
  • the step of forming a repairing line on the wire defect of the wire on the array substrate comprises:
  • the repair line is formed at the wire breakage by a repair wire material to turn on the wire.
  • the repairing wire material is hexahydroxychromium, hexahydroxy molybdenum or hexahydroxy tungsten.
  • the step of heating the formed repairing line comprises:
  • the formed repair line is heated by laser beam heating.
  • the step of heating the formed repairing line comprises:
  • the present invention forms a repairing line at the wire breakage defect of the wire to turn on the wire, and heats the repairing wire at a high temperature, so that the molecules on the surface of the repairing wire are rearranged according to a preset rule.
  • the number of grain boundaries on the surface of the repairing wire is reduced, so that the surface of the repairing wire is uniform, thereby reducing the resistance of the repairing wire, improving the ability of the wire to transmit signals, and realizing a long wire breakage defect. Patching.
  • FIG. 1A and FIG. 1E are schematic structural diagrams of repairing a wire breakage defect of a wire in the prior art
  • FIG. 2 is a schematic structural view of a wire break repairing device of an array substrate according to the present invention.
  • 3 is a schematic view of an array substrate with broken wires
  • Figure 4 is a partial enlarged view of Figure 3;
  • FIG. 5 is a schematic view showing the repair of the disconnection line shown in FIG. 2 through the disconnection repairing device of the array substrate shown in FIG. 2;
  • Figure 6 is a schematic view showing the crystal lattice of the surface of the repairing line after heating the repairing line in the present invention
  • Figure 7 is a schematic view showing the grain boundary of the surface of the repairing line after heating the repairing wire in the present invention
  • Figure 8 is a schematic view showing the surface crack of the repairing line after heating the repairing line in the present invention.
  • FIG. 9 is a schematic flow chart of a method for repairing a wire breakage of an array substrate according to the present invention.
  • FIG. 2 is a schematic structural view of a preferred embodiment of the wire break repairing device 20 of the array substrate of the present invention.
  • the wire break repairing device 20 of the array substrate is used for repairing a broken line in an array substrate
  • the wire break repairing device 20 of the array substrate includes a repairing unit 21 and a heating unit 22, and the repairing unit 21 specifically includes a clearing Module 211 and plating module 212.
  • FIG. 3 is a schematic diagram of an array substrate with broken wires
  • FIG. 4 is a partially enlarged schematic view of the wire with wire breakage defects in FIG. 3, and FIG. The broken line is repaired by the wire break repairing device 20 of the array substrate shown in FIG. 2 .
  • the pixel 313 includes a pixel R, a pixel G, and a pixel B.
  • a switching element 314 is disposed in the pixel 313, and the switching element 314 is, for example, a thin film field effect transistor (Thin Film Transistor (TFT), which includes a gate, a source, and a drain (not shown).
  • TFT Thin Film Transistor
  • the scan line 311 and the data line 312 generally cover the protective layer.
  • the wire breakage defect 32 divides the wire 31 into a first wire 33 and a second wire 34 that are disconnected from each other.
  • the repairing unit 21 in the disconnecting repairing device 20 of the array substrate forms a repairing line 40, such that the first conductive line 33 and the second conductive line 34 are turned on, and the heating unit 22 is formed.
  • the repair line 40 is heated at a high temperature.
  • the present invention first clears the wire break defect by the cleaning module 211.
  • the cleaning module 211 may be a laser fusing device that uses a high-energy laser to fuse the protective layers at both ends of the disconnection defect 32.
  • the plating line module 212 forms a repair on the disconnection defect 32 by using a repairing wire material.
  • the wire 40 connects the first wire 33 and the second wire 34 to turn on the wire 31.
  • the plating line module 212 may be an evaporation device, a sputtering device, or the like, and the repairing wire material may be hexahydroxychromium (Cr(CO)6), hexahydroxy molybdenum (Mo(CO)6), hexahydroxyl Tungsten (W(CO)6) or the like, this embodiment is described by taking only hexahydroxy tungsten as an example. Wherein the hexahydroxy tungsten has a boiling point T1 and a melting point T2, wherein the boiling point T1 is 175 degrees Celsius and the melting point T2 is 170 degrees Celsius.
  • the heating unit 22 in the present invention is preferably a laser heating device that uses a laser beam heating method to generate a high temperature by emitting a high-energy concentrated laser beam to heat the repair line 40 at a high temperature.
  • the temperature generated by the heating unit 22 on the surface of the repairing line 40 can reach a preset temperature T3, which is close to the melting point of the repairing line material and lower than the boiling point of the repairing line material, such as the preset temperature T3. It is larger than the melting point T2 of the repairing wire material and lower than the boiling point T1 of the repairing wire material.
  • the preset temperature T3 is about 170 degrees Celsius and lower than 175 degrees Celsius, such as 165 degrees Celsius, 170 degrees Celsius, 173 degrees Celsius, etc., so that the surface of the repairing wire 40 can be melted and not volatilized. .
  • FIG. 6 is a schematic view showing the arrangement of the crystal lattice after heating, and the crystal lattices 41 composed of the molecules are also sequentially arranged according to a preset rule, so that the number of grain boundaries 42 on the surface of the repairing line 40 is conspicuous.
  • FIG. 7 is a schematic diagram of the surface grain boundary of the repairing line 40 after being heated by the heating unit 22. In this way, the resistance of the surface of the repairing wire 40 can be greatly reduced, so that the signal can be smoothly transmitted, and the conductive property of the wire 30 is also improved.
  • FIG. 8 is a schematic diagram of the surface crack of the repairing line 40 after the repairing line 40 is heated.
  • the molecules on the surface of the repairing line 40 are sequentially arranged according to a preset rule, and the regularly moving molecules can fill the crack 43 on the surface of the repairing line 40.
  • Making the surface of the repair line 40 relatively uniform please refer to FIG. 1E improves the problem that the surface crack 43 of the repair line 40 is large. In this way, the resistance of the surface of the repairing wire 40 can be greatly reduced, so that the signal can be smoothly transmitted, and the conductive property of the wire 30 is also improved.
  • the wire 31 having the wire breakage defect 32 is repaired by the repairing unit 21, the repairing wire 40 is formed at the wire breaking defect 32, and then the repairing wire 40 is heat-treated by the heating unit 22.
  • the molecules constituting the repairing line 40 are sequentially arranged according to a preset rule, thereby reducing the number of grain boundaries on the surface of the repairing line 40, and making the surface of the repairing line 40 uniform, reducing the repairing line 40.
  • the resistance increases the ability of the wire 31 to transmit signals.
  • the present invention can sequentially align the molecules on the surface of the repairing line 40 by high-temperature heating, the resistance of the repairing line is lowered, so that the present invention can repair some wires with long disconnection defects, for example, can repair more than 100. Micron (um) wire breakage defects.
  • FIG. 9 is a schematic flow chart of a preferred embodiment of a method for repairing a broken line of an array substrate according to the present invention.
  • step S901 the protective layers at both ends of the disconnection defect 32 are removed to expose both ends of the disconnection defect 31.
  • the wire breakage defect 32 is present on the wire 31, and the wire breakage defect 32 is present such that the wire 31 is divided into the first wire 33 and the second wire 34 which are disconnected from each other.
  • the protective layer at both ends of the disconnection defect 32 can be removed by a laser fusing device that uses a high-energy laser to fuse the protective layers at both ends of the disconnection defect 31.
  • step S902 the repairing line 40 is formed by using the repairing wire material to connect the first wire 33 and the second wire 34, thereby turning on the wire 31.
  • the repair line 40 may be formed by evaporation, sputtering, or the like.
  • the repair line material may be hexahydroxychromium (Cr(CO)6), hexahydromolybdenum (Mo(CO)6), hexahydroxy tungsten (W(CO)6), or the like.
  • the repair line material has a boiling point T1 and a melting point T2.
  • hexahydrogen tungsten has a boiling point T1 of 175 degrees Celsius and a melting point T2 of 170 degrees Celsius.
  • step S903 the repairing line 40 is heated so that the molecules constituting the repairing line 40 are sequentially arranged in accordance with a preset rule.
  • the repairing line 40 can be heated by a laser beam heating device, and the temperature generated by the laser beam heating device can reach a preset temperature T3, which is close to the melting point T2 of the repairing wire material and low.
  • the boiling point T1 of the repairing wire material, such as the preset temperature T3 is greater than the melting point T2 of the repairing wire material and lower than the boiling point T1 of the repairing wire material.
  • the preset temperature T3 is about 170 degrees Celsius and lower than 175 degrees Celsius, such as 165 degrees Celsius, 170 degrees Celsius, 173 degrees Celsius, etc., so that the repairing wire 40 can be melted and not volatilized.
  • the repair line is heat-treated, so that the molecules constituting the repair line are sequentially arranged according to a preset rule, thereby reducing the number of grain boundaries on the surface of the repair line, and The surface of the repair line is uniform, reducing the resistance of the repair line and improving the ability of the wire to transmit signals. Moreover, the resistance of the repair line is reduced, so that some wires with longer breakage defects can be repaired, for example, wire break defects larger than 100 micrometers (um) can be repaired.

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  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical & Material Sciences (AREA)
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Abstract

提供了一种阵列基板（30）的断线修补装置（20）及修补方法。断线修补装置（20）包括修补单元（21）及加热单元（22），修补单元（21）在阵列基板（30）上导线（31）的断线缺陷（32）处形成修补线（40），加热单元（22）对修补线（40）进行加热，以使得构成修补线（40）的分子按照预设规则进行顺序排列，从而可以实现对长度较长的断线缺陷（32）的修补。

Description

阵列基板的断线修补装置及修补方法 技术领域
本发明涉及液晶显示技术领域，特别是涉及一种阵列基板的断线修补装置及修补方法。
 背景技术
随着液晶显示技术的不断发展，对液晶生产效率提出了很高的要求。液晶显示面板包括阵列基板及彩色滤光片基板，所述阵列基板上设置有大量的导线，如数据线和扫描线。
在制作阵列基板过程中，由于各种因素的影响，可能会有数据线或者扫描线存在断线缺陷的情况，请参阅图1A，图1A中导线10存在断线缺陷11，导致所述导线10不能导通，进而不能实现传输信号的功能。
现有技术中，为了修复所述导线10上存在的断线缺陷11，通常是通过断线修补机在导线10的断线缺陷11处镀膜，在断线缺陷处形成补线12以导通所述导线10，如图1B所示。
但是通过断线修补机形成所述补线12后，由于所述补线12的表面的分子没有顺序排列，由所述分子构成的晶格15（其中表示分子在晶体中排列规律的空间格架称为晶格）排列顺序也较为混乱，请参阅图1C，无序排列的晶格15形成的界线13数量过多，请参阅图1D；而且在镀膜形成所述补线12后，所述补线12的表面存在裂缝14，使得所述补线12的表面高低不平，请参阅图1E。上述两种情况都会导致所所述补线12表面的阻抗增加，导致所述补线12的电阻增加，进而使得修补后的导线10的导电性能降低，影响所述导线10传输信号的能力。因此，采用现有的断线修补机及其修补方法，仅能修补断线长度在100微米以内的导线，若导线的断线长度超过100微米，则该阵列基板将视为不合格品而报废，从而影响了阵列基板的制造良率。
 技术问题
本发明的一个目的在于提供一种阵列基板的断线修补装置，以解决现有技术中由于对导线的断线缺陷处镀膜形成补线后，补线表面的分子排列混乱，影响导线传输信号的能力，进而影响修补长度的技术问题。
 技术解决方案
本发明构造了一种阵列基板的断线修补装置，其中包括：
修补单元；用于在阵列基板上导线的断线缺陷处形成修补线以导通所述导线；
加热单元；用于在所述修补线表面产生一预设温度，以对所述修补单元形成的修补线进行加热。
在本发明一实施例中：其中所述修补单元具体包括：
清除模块；用于清除所述断线缺陷两端的保护层以露出断线缺陷的两端；
镀线模块；用于采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
在本发明一实施例中：其中所述修补线材料为六羟基铬。
在本发明一实施例中：其中所述修补线材料为六羟基钼。
在本发明一实施例中：其中所述修补线材料为六羟基钨。
在本发明一实施例中：其中所述加热单元，还用于采用激光束加热方式对所述修补单元形成的修补线进行加热。
在本发明一实施例中：其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
本发明的另一个目的在于提供一种阵列基板的断线修补装置，以解决现有技术中由于对导线的断线缺陷处镀膜形成补线后，补线表面的分子排列混乱，影响导线传输信号的能力，进而影响修补长度的技术问题。
为解决上述技术问题，本发明构造了一种阵列基板的断线修补装置，包括：
修补单元；用于在阵列基板上导线的断线缺陷处形成修补线；
加热单元；用于对所述修补单元形成的修补线进行加热。
在本发明一实施例中：所述修补单元具体包括：
清除模块；用于清除所述断线缺陷两端的保护层以露出断线缺陷的两端；
镀线模块；用于采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
在本发明一实施例中：所述修补线材料为六羟基铬。
在本发明一实施例中：所述修补线材料为六羟基钼。
在本发明一实施例中：所述修补线材料为六羟基钨。
在本发明一实施例中：所述加热单元，还用于采用激光束加热方式对所述修补单元形成的修补线进行加热。
在本发明一实施例中：所述加热单元，还用于在所述修补线表面产生一预设温度，其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
本发明的又一个目的在于提供一种阵列基板的断线修补方法，以解决现有技术中由于对导线的断线缺陷处镀膜形成补线后，补线表面的分子排列混乱，影响导线传输信号的能力，进而影响修补长度的技术问题。
为解决上述技术问题，本发明构造了一种阵列基板的断线修补方法，所述方法包括以下步骤：
在阵列基板上导线的断线缺陷处形成修补线；
对形成的修补线进行加热。
在本发明一实施例中：在阵列基板上导线的断线缺陷处形成修补线的步骤具体包括：
清除所述断线缺陷两端的保护层以露出所述断线缺陷的两端；
采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
在本发明一实施例中：所述修补线材料为六羟基铬、六羟基钼或者六羟基钨。
在本发明一实施例中：对形成的修补线进行加热的步骤具体包括：
采用激光束加热方式对已形成的修补线进行加热。
在本发明一实施例中：对形成的修补线进行加热的步骤具体包括：
在所述修补线表面产生一预设温度；其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
 有益效果
相对于现有技术，本发明在导线的断线缺陷处形成修补线以导通所述导线，并对所述修补线进行高温加热，使得所述修补线表面的分子按照预设规则重新排列，减少了所述修补线表面的晶界数量，使得所述修补线表面均匀，进而降低了所述修补线的电阻，提高了所述导线传输信号的能力，可以实现对长度较长的断线缺陷的修补。
 附图说明
图1A和图1E为现有技术中对导线的断线缺陷修补的结构示意图；
图2为本发明中阵列基板的断线修补装置的结构示意图；
图3为存在断线的阵列基板的示意图；
图4为图3的局部放大示意图；
图5为对图4所示的断线经图2所示的阵列基板的断线修补装置修补后的示意图；
图6为本发明中对修补线加热后，修补线表面晶格示意图；
图7为本发明中对修补线加热后，修补线表面晶界示意图；
图8为本发明中对修补线加热后，修补线表面裂缝示意图；
图9为本发明中阵列基板的断线修补方法的流程示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参阅图2，图2为本发明中阵列基板的断线修补装置20的较佳实施例的结构示意图。
其中所述阵列基板的断线修补装置20用于修补一阵列基板中的断线，所述阵列基板的断线修补装置20包括修补单元21和加热单元22，而所述修补单元21具体包括清除模块211以及镀线模块212。
请一并参阅图3、图4以及图5，图3为存在断线的阵列基板的示意图，图4为图3中存在断线缺陷的导线的局部放大示意图，图5为图4所示的断线经图2所示的阵列基板的断线修补装置20修补后的示意图。
在图3中，所述阵列基板30上形成有若干条导线31，譬如扫描线311及数据线312，所述扫描线311及数据线312相互垂直交错，并交错限定多个像素313，所述像素313包括像素R、像素G以及像素B。所述像素313内设置有开关元件314，所述开关元件314譬如为薄膜场效应晶体管(Thin Film Transistor，TFT)，其包括栅极、源极和漏极（图未标示）。其中所述扫描线311及数据线312通常覆盖保护层。在制作形成所述阵列基板30后，需要对所述阵列基板30进行检测，一旦检测出所述阵列基板30的导线31存在断线缺陷32，则通过本发明提供的阵列基板的断线修补装置20进行修补。
在图4中，所述断线缺陷32将所述导线31分为相互断开的第一导线33和第二导线34。在图5中，所述阵列基板的断线修补装置20中的修补单元21形成修补线40，使所述的第一导线33与第二导线34导通，而所述加热单元22对形成的修补线40进行高温加热。
请继续参阅图2，由于所述阵列基板30在导线31上通常覆盖有保护层（图未示）用来保护所述导线31，因此本发明首先通过所述清除模块211清除所述断线缺陷32两端的保护层以露出所述断线缺陷32的两端，所述清除模块211可以为激光熔断装置，其采用高能量的激光熔断断线缺陷32的两端的保护层。
在所述清除模块211将所述断线缺陷32两端的保护层清除并露出所述断线缺陷32的两端后，所述镀线模块212采用修补线材料在所述断线缺陷32形成修补线40，以连接所述第一导线33与第二导线34，进而导通所述导线31。
其中所述镀线模块212可以为蒸镀装置、溅镀装置等，而所述修补线材料可以为六羟基铬（Cr(CO)6）、六羟基钼（Mo(CO)6）、六羟基钨（W(CO)6）等，本实施例仅以六羟基钨为例进行说明。其中所述六羟基钨具有沸点T1和熔点T2，其中沸点T1为175摄氏度，熔点T2为170摄氏度。
在形成所述修补线40后，通过所述加热单元22对修补单元21形成的修补线40进行加热。其中本发明中的加热单元22优选为激光加热设备，其采用激光束加热方式，通过发射高能量集中激光束产生高温，以对所述修补线40进行高温加热。
其中所述加热单元22在所述修补线40表面产生的温度可达到一预设温度T3，所述预设温度T3接近修补线材料的熔点且低于修补线材料的沸点，如预设温度T3大于修补线材料的熔点T2且低于修补线材料的沸点T1。以修补线材料为六羟基钨为例，预设温度T3为170摄氏度左右且低于175摄氏度，如165摄氏度、170摄氏度、173摄氏度等，以使得所述修补线40表面能够熔化且不至于挥发。
其中在所述预设温度T3的加热下，构成所述修补线40的分子按照预设规则进行顺序排列，其中该预设规则使得分子按照某一方向有顺序的进行排列。请参阅图6，图6为加热后晶格的排列示意图，由所述分子构成的晶格41同样也按照预设规则进行顺序排列，进而使得所述修补线40表面的晶界42数量明显的减少，请参阅图7，图7为所述修补线40经所述加热单元22加热后表面晶界示意图。如此，可以极大的降低所述修补线40表面的电阻，使得信号能够顺利的传输，所述导线30的导电性能也得到提升。
请参阅图8，其为对所述修补线40加热后，所述修补线40表面裂缝的示意图。在通过所述加热单元22对所述修补线40高温加热后，所述修补线40表面的分子按照预设规则进行顺序排列，规则运动的分子可将所述修补线40表面的裂缝43填充，使得所述修补线40的表面相对均匀（请对比参阅图1E），改善了所述修补线40表面裂缝43较大的问题。如此，可以极大的降低所述修补线40表面的电阻，使得信号能够顺利的传输，所述导线30的导电性能也得到提升。
本发明的断线修补装置20，通过修补单元21对存在断线缺陷32的导线31进行修补，在所述断线缺陷32处形成修补线40，之后通过加热单元22对修补线40进行加热处理，使得构成所述修补线40的分子按照预设规则进行顺序排列，进而减少所述修补线40表面的晶界数量，且使得所述修补线40的表面均匀，降低了所述修补线40的电阻，提高了所述导线31信号传输的能力。
而且，由于本发明可以通过高温加热使得所述修补线40表面的分子进行顺序排列，降低了所述修补线的电阻，因此本发明可以修补一些断线缺陷较长的导线，譬如可以修复大于100微米（um）的断线缺陷。
图9为本发明中阵列基板的断线修补方法的较佳实施例的流程示意图。
步骤S901中，清除断线缺陷32两端的保护层以露出断线缺陷31的两端。其中所述断线缺陷32存在于导线31上，断线缺陷32的存在，使得所述导线31分为相互断开的第一导线33和第二导线34。
在具体实施过程中，可通过激光熔断装置清除断线缺陷32两端的保护层，该激光熔断装置采用高能量的激光熔断断线缺陷31的两端的保护层。
步骤S902中，采用修补线材料形成修补线40，以连接所述第一导线33与第二导线34，进而导通所述导线31。
在具体实施过程中，可以通过蒸镀、溅镀等方式形成所述修补线40。所述修补线材料可以为六羟基铬（Cr(CO)6）、六羟基钼（Mo(CO)6）、六羟基钨（W(CO)6）等。所述修补线材料具有沸点T1和熔点T2。譬如六羟基钨的沸点T1为175摄氏度，熔点T2为170摄氏度。
步骤S903中，对所述修补线40进行加热，以使得构成所述修补线40的分子按照预设规则进行顺序排列。在具体实施过程中，可以通过激光束加热设备对修补线40进行加热，该激光束加热设备产生的温度可达到一预设温度T3，所述预设温度T3接近修补线材料的熔点T2且低于修补线材料的沸点T1，如预设温度T3大于修补线材料的熔点T2且低于修补线材料的沸点T1。以修补线材料为六羟基钨为例，预设温度T3为170摄氏度左右且低于175摄氏度，如165摄氏度、170摄氏度、173摄氏度等，以使得所述修补线40能够熔化且不至于挥发。
关于该方法的具体的过程请参阅上文针对阵列基板的断线修补装置的详细描述，此处不再赘述。本发明对存在断线缺陷处形成修补线后，对修补线进行加热处理，使得构成修补线的分子按照预设规则进行顺序排列，进而减少所述修补线表面的晶界数量，且使得所述修补线的表面均匀，降低了所述修补线的电阻，提高了所述导线信号传输的能力。而且，降低了所述修补线的电阻，因此可修补一些断线缺陷较长的导线，譬如可以修复大于100微米（um）的断线缺陷。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
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Claims (19)

  1. 一种阵列基板的断线修补装置，其中包括：
    修补单元；用于在阵列基板上导线的断线缺陷处形成修补线以导通所述导线；
    加热单元；用于在所述修补线表面产生一预设温度，以对所述修补单元形成的修补线进行加热。
  2. 根据权利要求1所述的阵列基板的断线修补装置，其中所述修补单元具体包括：
    清除模块；用于清除所述断线缺陷两端的保护层以露出断线缺陷的两端；
    镀线模块；用于采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
  3. 根据权利要求2所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基铬。
  4. 根据权利要求2所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基钼。
  5. 根据权利要求2所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基钨。
  6. 根据权利要求1所述的阵列基板的断线修补装置，其中所述加热单元，还用于采用激光束加热方式对所述修补单元形成的修补线进行加热。
  7. 根据权利要求1所述的阵列基板的断线修补装置，其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
  8. 一种阵列基板的断线修补装置，其中包括：
    修补单元；用于在阵列基板上导线的断线缺陷处形成修补线；
    加热单元；用于对所述修补单元形成的修补线进行加热。
  9. 根据权利要求8所述的阵列基板的断线修补装置，其中所述修补单元具体包括：
    清除模块；用于清除所述断线缺陷两端的保护层以露出断线缺陷的两端；
    镀线模块；用于采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
  10. 根据权利要求9所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基铬。
  11. 根据权利要求9所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基钼。
  12. 根据权利要求9所述的阵列基板的断线修补装置，其中所述修补线材料为六羟基钨。
  13. 根据权利要求8所述的阵列基板的断线修补装置，其中所述加热单元，还用于采用激光束加热方式对所述修补单元形成的修补线进行加热。
  14. 根据权利要求8所述的阵列基板的断线修补装置，其中所述加热单元，还用于在所述修补线表面产生一预设温度，其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
  15. 一种阵列基板的断线修补方法，其中所述方法包括以下步骤：
    在阵列基板上导线的断线缺陷处形成修补线；
    对形成的修补线进行加热。
  16. 根据权利要求15所述的阵列基板的断线修补方法，其中在阵列基板上导线的断线缺陷处形成修补线的步骤具体包括：
    清除所述断线缺陷两端的保护层以露出所述断线缺陷的两端；
    采用修补线材料在所述断线缺陷处形成所述修补线，以导通所述导线。
  17. 根据权利要求16所述的阵列基板的断线修补方法，其中所述修补线材料为六羟基铬、六羟基钼或者六羟基钨。
  18. 根据权利要求15所述的阵列基板的断线修补方法，其中对形成的修补线进行加热的步骤具体包括：
    采用激光束加热方式对已形成的修补线进行加热。
  19. 根据权利要求15所述的阵列基板的断线修补方法，其中对形成的修补线进行加热的步骤具体包括：
    在所述修补线表面产生一预设温度；其中所述预设温度大于所述修补线材料的熔点而小于所述修补线材料的沸点。
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