WO2014086050A1 - 断线修补方法、断线修补结构和断线修补系统 - Google Patents

断线修补方法、断线修补结构和断线修补系统 Download PDF

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WO2014086050A1
WO2014086050A1 PCT/CN2012/086295 CN2012086295W WO2014086050A1 WO 2014086050 A1 WO2014086050 A1 WO 2014086050A1 CN 2012086295 W CN2012086295 W CN 2012086295W WO 2014086050 A1 WO2014086050 A1 WO 2014086050A1
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Prior art keywords
line
repairing
insulating layer
repair
intersection
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PCT/CN2012/086295
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English (en)
French (fr)
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郑文达
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深圳市华星光电技术有限公司
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Priority to US13/810,511 priority Critical patent/US9111940B2/en
Publication of WO2014086050A1 publication Critical patent/WO2014086050A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221—Crossover interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to the field of liquid crystal display, in particular to a wire break repairing method, a wire break repairing structure and a wire break repairing system of a liquid crystal panel.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display, thin film transistor liquid crystal display
  • the main electronic products of today's information society such as television, computer, mobile phone, GPS (Global Positioning System), car display, public display, etc.
  • TFT-LCD is a combination of semiconductor technology and liquid crystal display technology.
  • the fabrication of TFT arrays is the most difficult part of the entire TFT-LCD manufacturing process.
  • the TFT array process includes forming a scan line, an insulating layer, a semiconductor layer, a data line, a transparent electrode layer, and the like.
  • the impurity 13 remains When the intersection of the scanning line 11 and the data line 12 (as shown in FIG. 1a), the impurity 13 needs to be removed, and a method of laser irradiation of the impurity 13 to remove the impurity 13 is usually employed.
  • the laser breaks other places where it is irradiated, such as the scanning line 11, the data line 12, and the like, and the impurity 13 is located at the intersection of the scanning line 11 and the data line 12, thereby removing impurities 13
  • the laser inevitably breaks the scan line 11 and the data line 12 (as shown in FIG. 1b); at the same time, other reasons may cause a disconnection at the intersection of the scan line 11 and the data line 12.
  • the disconnection at the intersection of the scan line 11 and the data line 12 is generally repaired. If the plating line is directly repaired at the intersection of the scan line 11 and the data line 12, the repair line 14 of the scan line 11 is directly in contact with the repair line 15 of the data line, and the scan line 11 is short-circuited with the data line 12 (eg, FIG. 1c), thereby affecting the display of the pixel area corresponding to the scan line 11 and the data line 12. Therefore, in the prior art, the disconnection at the intersection of the scan line 11 and the data line 12 can only be repaired after the TFT array process is completed, but the repair process after the TFT array process is completed is complicated, and the data line is formed. The post-12 process may also cause the disconnection at the intersection of the scan line 11 and the data line 12 to be unrepairable.
  • the main object of the present invention is to provide a wire break repairing method, a wire break repairing structure and a wire break repairing system which improve the repair rate of broken wires.
  • the invention provides a wire repairing method, comprising the steps of:
  • a second repairing line connecting both ends of the broken line of the data line is formed, and the insulating layer is provided at an intersection of the second repairing line and the first repairing line.
  • the step of forming the insulating layer covering the first repairing line comprises:
  • An insulating layer partially covering the first repair line is formed.
  • the step of forming the insulating layer covering the first repairing line comprises:
  • An insulating layer covering the intersection position is formed at an intersection of the first repair line and the second repair line.
  • the step of forming the insulating layer covering the first repairing line comprises:
  • the insulating film layer is subjected to photoresisting, exposure, development, etching, and photoresist removal processes to form the insulating layer.
  • the method further comprises:
  • the insulating layer is cured.
  • the step of curing the insulating layer is specifically:
  • the insulating layer is baked or the insulating layer is irradiated with ultraviolet light.
  • the step of forming the insulating layer covering the first repairing line comprises:
  • An insulating layer covering the entire first repair line is formed.
  • the present invention also provides a wire break repair structure for repairing a broken line at the intersection of a scan line and a data line in a TFT array substrate, including a first repair line connecting the ends of the broken line of the scan line, and two broken connection data lines. a second repair line at the end and an insulating layer disposed at the intersection of the first repair line and the second repair line.
  • the insulating layer covers the entire first repair line.
  • the insulating layer covers a portion of the first repair line.
  • the invention also provides a wire break repair system, comprising:
  • a plating line device for forming a first repairing line connecting the two ends of the broken line of the scan line and a second repairing line connecting the two ends of the broken line of the data line;
  • An insulating layer forming device for forming an insulating layer covering the first repairing line.
  • the insulating layer forming device specifically includes:
  • a coating positioning module configured to pre-set a forming position of the second repairing line; determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line;
  • a coating module configured to form an insulating layer covering the intersection position at an intersection of the first repairing line and the second repairing line.
  • the coating module specifically includes:
  • a molding unit for coating the insulating film layer with a photoresist, exposing, developing, etching, and photoresist removing process to form the insulating layer.
  • the coating module specifically includes:
  • a curing unit for curing the insulating layer.
  • the curing unit is a baking machine or an ultraviolet illuminator.
  • the insulating layer forming device is specifically configured to form an insulating layer partially covering the first repairing line.
  • the insulating layer forming device is specifically configured to form an insulating layer covering the entire first repairing line.
  • the invention separates the insulating layer between the repaired first repairing line and the second repairing line, thereby effectively avoiding a short circuit at the intersection of the scanning line and the data line breaking line, thereby realizing repairing the disconnection of the intersection of the two metal layers at the same time, and Improve the repair rate of wire break repair.
  • 1a is a schematic view showing the presence of impurities at intersections of scan lines and data lines in the prior art
  • 1b is a schematic structural view of a scan line and a data line after laser removing impurities in the prior art
  • 1c is a schematic structural view showing a short circuit caused by plating repair at the intersection of a scan line and a data line in the prior art
  • FIG. 2 is a flow chart of an embodiment of a method for repairing a broken wire according to the present invention
  • FIG. 3 is a flow chart of a second embodiment of a method for repairing a broken wire according to the present invention.
  • FIG. 4 is a schematic structural view of coating a first repairing line in an embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a coating insulating layer according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of an interrupt line repairing structure according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of an interrupt line repairing system according to an embodiment of the present invention.
  • FIG. 2 is a flowchart of an embodiment of a disconnection repairing method according to the present invention.
  • the disconnection repairing method of the embodiment is used for repairing the disconnection at the intersection of the scan line and the data line in the TFT array substrate, and the method for repairing the disconnection includes:
  • step S11 a first repairing line is formed, and two ends of the first repairing line are respectively connected to two ends of the broken line of the scanning line;
  • impurities appear at the intersection of the scanning line 21 and the data line 22, and the impurities are removed by laser irradiation to cause the scanning line 21 and the data line 22 to be broken, or the scanning line 21 and the data line 22 are caused by other reasons.
  • a broken line occurs at the intersection, and the scanning line 21 and the data line 22 need to be coated and repaired.
  • the first repairing line 23 is preferentially applied, so that both ends of the first repairing line 23 are connected to two break points at the broken line of the scanning line 21, and the scanning line 21 is turned on to repair the scanning line 21. .
  • step S12 an insulating layer is formed on the first repair line.
  • An insulating layer 25 is coated on the first repairing line 23, and the insulating layer 25 may cover the entire first repairing line 23, or the insulating layer 25 covers only a portion of the first repairing line 23, as shown in FIG.
  • the insulating film is first coated, and then subjected to a photoresist, exposure, etching, photoresist removal process, etc., so that the insulating layer 25 covers the first repairing line 23.
  • the insulating layer 25 may also be coated only on the first repairing line 23.
  • step S13 a second repairing line is formed, and two ends of the second repairing line are respectively connected to both ends of the broken line of the data line.
  • a second repair 24 is formed. Both ends of the second repairing line 24 are respectively connected to both ends of the disconnection of the data line 22, so that the data line 22 is turned on to repair the data line 22.
  • An insulating layer 25 is provided at the intersection of the second repairing line 24 and the first repairing line 23. When the second repairing line 24 has the insulating layer 25, the second repairing line 24 is not in contact with the first repairing line 23, and the repaired first repairing line 23 and the second repairing line 24 can be effectively prevented from being short-circuited. .
  • step S12 if the insulating layer 25 is formed to cover only a portion of the first repairing line 23, in this step, the intersection of the second repairing line 24 and the first repairing line 23 is an insulating layer 25 covering the first repairing line 23 s position.
  • the formation position of the second repairing line 24 may be set in advance, and then the intersection of the second repairing line 24 and the first repairing line 23 may be determined according to the position of the second repairing line 24 provided, and An insulating layer 25 is formed at the intersection.
  • FIG. 3 is a flow chart of a second embodiment of a method for repairing a TFT coating film according to the present invention. This embodiment adds the step of curing the insulating layer on the basis of the embodiment shown in FIG. 2.
  • Step S21 forming a first repairing line connecting the two ends of the broken line of the scan line;
  • Step S22 forming an insulating layer covering the first repairing line
  • Step S23 curing the insulating layer
  • the insulating layer 25 may be cured for the insulating layer 25 of the material that needs to be cured. Depending on the material of the insulating layer 25, baking or ultraviolet light irradiation may be employed. After the insulating layer 25 is cured, the insulating layer 25 can be effectively prevented from falling off during the post-process, and the short-circuiting of the scan line 21 and the data line 22 due to the falling off thereof is further prevented.
  • Step S24 forming a second repairing line connecting the two ends of the broken line of the data line, and having an insulating layer at the intersection of the second repairing line and the first repairing line.
  • the insulating layer 25 is isolated between the repaired first repairing line 23 and the second repairing line 24, and the coating insulating layer 25 is cured by baking or ultraviolet light irradiation to avoid the insulating layer 25 from following.
  • the falling off during the process further prevents the repaired first repairing line 23 and the second repairing line 24 from being short-circuited at the intersection, thereby improving the repair rate of the broken wire.
  • the present invention also provides a wire break repair structure, as shown in FIG. 6, which is a schematic view of a repair structure in an embodiment of the present invention.
  • the disconnection repair is performed by using the method of the above embodiment, and the broken repair structure is used for repairing the disconnection at the intersection of the scan line and the data line in the TFT array substrate, including the first repair line 23 and the second repair line.
  • the first repairing line 23 is connected to both ends of the broken line of the scanning line 21
  • the second repairing line 24 is at both ends of the broken line connecting the data line 22
  • the insulating layer 25 is disposed at the first repairing line 23 and the Between the two repair lines 24, the insulating layer 25 may cover the entire first repair line 23, or the insulating layer 25 covers only a portion of the first repair line 23, which may be only on the first repair line 23 and the second repair line 24.
  • An insulating layer 25 is provided at the intersection.
  • the insulating layer 25 is isolated between the repaired first repairing line 23 and the second repairing line 24, so that the scanning line 21 and the data line 22 are repaired without short circuit, and the two metal layers can be repaired at the same time. , improved the repair rate of broken wires and reduced the production cost.
  • FIG. 7 is a schematic structural diagram of an interrupt line repair system according to an embodiment of the present invention.
  • the disconnection repair system includes:
  • a plating line device 100 for forming a first repairing line connecting the two ends of the broken line of the scan line and a second repairing line connecting the two ends of the broken line of the data line;
  • the insulating layer forming device 200 is configured to form an insulating layer covering the first repairing line.
  • the insulating layer may cover the entire first repairing line, or may cover a portion of the first repairing line, so that the insulating layer covers the intersection of the second repairing line and the first repairing line.
  • the insulating layer forming device 200 specifically includes:
  • a coating positioning module 210 configured to preset a forming position of the second repairing line; and determining an intersection position of the first repairing line and the second repairing line according to the formed position of the second repairing line;
  • the coating module 220 is configured to form an insulating layer covering the intersection position at an intersection of the first repairing line and the second repairing line.
  • the coating module 220 specifically includes:
  • the molding unit 222 is configured to perform photoresisting, exposure, development, etching, and photoresist removal processes on the insulating film layer to form the insulating layer.
  • the coating module 220 may further include:
  • a curing unit 223 for curing the insulating layer may be a baking machine or an ultraviolet illuminator.

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Abstract

提供了一种断线修补方法、断线修补结构和断线修补系统，其中，断线修补方法包括步骤：形成连接扫描线（21）的断线两端的第一修补线（23）；形成覆盖第一修补线（23）的绝缘层（25）；形成连接数据线（22）的断线两端的第二修补线（24），第二修补线（24）与第一修补线（23）的交叉处具有该绝缘层（25）。通过在第一修补线（23）和第二修补线（24）之间隔离绝缘层（25），有效避免了扫描线（21）和数据线（22）断线交叉处发生短路，实现了同时修补两个金属层交叉处断线，提高了断线修补良率。

Description

断线修补方法、断线修补结构和断线修补系统
技术领域
本发明涉及到液晶显示领域，特别涉及到一种液晶面板的断线修补方法、断线修补结构和断线修补系统。
背景技术
TFT-LCD(Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示器)因其体积薄、重量轻、画面质量优异、功耗低、寿命长、数字化和无辐射等优点在各种大、中、小的产品上得到广泛应用，几乎涵盖了当今信息社会的主要电子产品，例如，电视、电脑、手机、GPS（全球定位系统）、车载显示、公共显示等。
TFT-LCD是半导体技术和液晶显示技术相结合的产物，TFT阵列的制作是整个TFT-LCD制造中技术难度最大的部分。TFT阵列制程包括形成扫描线、绝缘层、半导体层、数据线、透明电极层等，在TFT阵列制程中，如图1a至图1c所示，在形成数据线12后，如果有杂质13残留在扫描线11与数据线12的交叉处时（如图1a所示），需要对杂质13进行移除，通常采用的方法是对杂质13进行激光照射以去除杂质13。但是在激光照射去除杂质13的同时，激光会打断其照射到的其他地方，如扫描线11、数据线12等，杂质13位于扫描线11与数据线12的交叉处，因此在去除杂质13的时候，激光不可避免地会打断扫描线11和数据线12（如图1b所示）；同时，其他原因也可能造成扫描线11与数据线12的交叉处出现断线。
为提高TFT-LCD的显示效果，一般都会对扫描线11与数据线12交叉处的断线进行修补。如果直接对扫描线11和数据线12的交叉处进行镀线修补，则会造成扫描线11的修补线14与数据线的修补线15直接接触，而使扫描线11与数据线12短路（如图1c所示），从而影响该扫描线11与数据线12对应的像素区域的显示。因此，现有技术中，对扫描线11与数据线12的交叉处的断线一般只能在TFT阵列制程完成后再进行修补，但TFT阵列制程完成后的修补工序比较复杂，而形成数据线12后的制程也可能造成扫描线11与数据线12交叉处的断线无法修补。
因此，如何修补扫描线11与数据线12交叉处的断线成为TFT阵列制程中亟待解决的问题之一。
发明内容
本发明的主要目的为提供一种提高断线不良修补率的断线修补方法、断线修补结构和断线修补系统。
本发明提出一种断线修补方法，包括步骤：
形成连接扫描线的断线两端的第一修补线；
形成覆盖所述第一修补线的绝缘层；
形成连接数据线的断线两端的第二修补线，所述第二修补线与第一修补线的交叉处具有所述绝缘层。
优选地，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
形成部分覆盖第一修补线的绝缘层。
优选地，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
预先设置第二修补线的形成位置；
根据设置的第二修补线的形成位置确定第一修补线与第二修补线的交叉位置；
在第一修补线与第二修补线的交叉位置形成覆盖该交叉位置的绝缘层。
优选地，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
涂布绝缘膜层；
对该绝缘膜层进行涂光阻、曝光、显影、蚀刻、去光阻制程，形成所述绝缘层。
优选地，所述形成覆盖所述第一修补线的绝缘层的步骤之后还包括：
固化所述绝缘层。
优选地，所述固化所述绝缘层的步骤具体为：
对所述绝缘层进行烘烤或对所述绝缘层进行紫外光照射。
优选地，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
形成覆盖整条第一修补线的绝缘层。
本发明还提出一种断线修补结构，用于修补TFT阵列基板中扫描线与数据线的交叉处的断线，包括连接扫描线的断线两端的第一修补线、连接数据线断线两端的第二修补线及设置在第一修补线与第二修补线交叉处的绝缘层。
优选地，所述绝缘层覆盖整条第一修补线。
优选地，所述绝缘层覆盖部分第一修补线。
本发明还提出一种断线修补系统，包括：
镀线装置，用于形成连接扫描线的断线两端的第一修补线和连接数据线的断线两端的第二修补线；
绝缘层形成装置，用于形成覆盖所述第一修补线的绝缘层。
优选地，所述绝缘层形成装置具体包括：
涂布定位模块，用于预先设置第二修补线的形成位置；根据设置的第二修补线的形成位置确定第一修补线与第二修补线的交叉位置；
涂布模块，用于在第一修补线与第二修补线的交叉位置形成覆盖该交叉位置的绝缘层。
优选地，所述涂布模块具体包括：
涂布单元，用于涂布绝缘膜层；
成型单元，用于对所述绝缘膜层进行涂光阻、曝光、显影、蚀刻、去光阻制程，形成所述绝缘层。
优选地，所述涂布模块具体还包括：
固化单元，用于固化所述绝缘层。
优选地，所述固化单元为烘烤机或紫外光照射器。
优选地，所述绝缘层形成装置具体用于，形成部分覆盖第一修补线的绝缘层。
优选地，所述绝缘层形成装置具体用于，形成覆盖整条第一修补线的绝缘层。
本发明通过在修补的第一修补线和第二修补线之间隔离绝缘层，有效避免了扫描线和数据线断线交叉处发生短路，实现了同时修补两个金属层交叉处断线，且提高了断线修补良率。
附图说明
图1a为现有技术中在扫描线和数据线交叉处存在杂质的示意图；
图1b为现有技术中激光去除杂质后扫描线和数据线的结构示意图；
图1c为现有技术中在扫描线与数据线的交叉处镀线修补造成短路的结构示意图；
图2为本发明断线修补方法一实施例的流程图；
图3为本发明断线修补方法二实施例的流程图；
图4为本发明实施例中涂布第一修补线结构示意图；
图5为本发明实施例中涂布绝缘层结构示意图；
图6为本发明实施例中断线修补结构示意图；
图7为本发明实施例中断线修补系统的结构示意图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图2所示，图2为本发明断线修补方法一实施例的流程图。本实施例断线修补方法用于修补TFT阵列基板中扫描线与数据线的交叉处的断线，该断线修补方法包括：
步骤S11，形成第一修补线，该第一修补线的两端分别连接扫描线的断线处的两端；
请一并参阅图4，扫描线21和数据线22交叉处出现杂质，通过激光照射移除杂质后造成扫描线21和数据线22出现断线，或者由于其他原因造成扫描线21与数据线22的交叉处出现断线，需对扫描线21和数据线22进行镀膜修补。本实施例优先涂布第一修补线23，使第一修补线23的两端连接在扫描线21断线处的两个断点上，使扫描线21导通，实现对扫描线21的修补。
步骤S12，在第一修补线上形成绝缘层。
在第一修补线23上涂布绝缘层25，该绝缘层25可覆盖整条第一修补线23，或者该绝缘层25只覆盖部分第一修补线23，如图5所示。
在本步骤中，先在涂布绝缘膜，然后进行涂光阻、曝光、蚀刻、去光阻等制程，使绝缘层25覆盖第一修补线23。当然，在其他实施例中，也可仅在第一修补线23上涂布绝缘层25。
步骤S13，形成第二修补线，该第二修补线的两端分别连接数据线的断线处的两端。
请一并参阅图6，形成第二修补24，该第二修补线24的两端分别连接数据线22的断线处的两端，从而使数据线22导通，实现数据线22的修补。第二修补线24与第一修补线23的交叉处具有绝缘层25。第二修补线24在涂布时，由于具有绝缘层25，使第二修补线24与第一修补线23不接触，可有效防止修补的第一修补线23和第二修补线24接触产生短路。
在步骤S12中，若形成的绝缘层25仅覆盖部分第一修补线23，则在本步骤中，第二修补线24与第一修补线23的交叉处为绝缘层25覆盖第一修补线23的位置。当然，在步骤S12中，也可预先设置第二修补线24的形成位置，然后根据设置的第二修补线24的位置确定第二修补线24与第一修补线23的交叉处，而在该交叉处形成绝缘层25。
本实施例通过在修补的第一修补线23和第二修补线24之间隔离绝缘层25，有效避免了扫描线21和数据线22交叉处的短路，实现了同时修补两个金属层交叉处断线，提高了断线修补良率。
如图3所示，图3为本发明TFT镀膜断线修补方法二实施例的流程图。本实施例在图2所示实施例的基础上，增加了固化绝缘层的步骤。
步骤S21，形成连接扫描线的断线两端的第一修补线；
步骤S22，形成覆盖所述第一修补线的绝缘层；
步骤S23，固化绝缘层；
请一并参阅图5，在涂布完绝缘层25之后，对于需要固化处理才能成型的材料的绝缘层25，可对绝缘层25进行固化处理。根据绝缘层25的材料，可采取烘烤或者紫外光照射的方式。将绝缘层25固化之后，可有效防止绝缘层25在后制程过程中脱落，进一步避免因其脱落造成扫描线21和数据线22短路。
步骤S24，形成连接数据线的断线两端的第二修补线，第二修补线与第一修补线的交叉处具有绝缘层。
本实施例通过在修补的第一修补线23和第二修补线24之间隔离绝缘层25，并采用烘烤或紫外光照射的方式对涂布绝缘层25进行固化，避免绝缘层25在后续制程中脱落，进一步防止了修补的第一修补线23和第二修补线24在交叉处发生短路，提高了断线修补良率。
本发明还提供一种断线修补结构，如图6所示，图6为本发明实施例中修补结构示意图。
本实施例采用上述实施例的方法进行断线修补，获得的断线修补结构用于修补TFT阵列基板中扫描线与数据线的交叉处的断线，包括第一修补线23、第二修补线24和绝缘层25，第一修补线23连接在扫描线21的断线两端，第二修补线24在连接数据线22的断线两端，绝缘层25设置在第一修补线23与第二修补线24之间，该绝缘层25可覆盖整条第一修补线23，或者该绝缘层25只覆盖部分第一修补线23，可只在第一修补线23与第二修补线24的交叉处设置绝缘层25。
本实施例通过在修补的第一修补线23和第二修补线24之间隔离绝缘层25，使得扫描线21和数据线22修补后不造成短路，可同时修补两个金属层交叉处断线，提高了断线修补良率，降低了制作成本。
本发明还提出一种断线修补系统，如图7所示，图7为本发明实施例中断线修补系统的结构示意图，该断线修补系统包括：
镀线装置100，用于形成连接扫描线的断线两端的第一修补线和连接数据线的断线两端的第二修补线；
绝缘层形成装置200，用于形成覆盖所述第一修补线的绝缘层。绝缘层可以覆盖整条第一修补线，也可以覆盖部分第一修补线，使绝缘层覆盖于所述第二修补线与第一修补线的交叉处。
绝缘层形成装置200具体包括：
涂布定位模块210，用于预先设置第二修补线的形成位置；根据设置的第二修补线的形成位置确定第一修补线与第二修补线的交叉位置；
涂布模块220，用于在第一修补线与第二修补线的交叉位置形成覆盖该交叉位置的绝缘层。
涂布模块220具体包括：
涂布单元221，用于涂布绝缘膜层；
成型单元222，用于对该绝缘膜层进行涂光阻、曝光、显影、蚀刻、去光阻制程，形成所述绝缘层。
涂布模块220具体还可包括：
固化单元223，用于固化所述绝缘层。固化单元223可以为烘烤机或紫外光照射器。
本实施例的具体工作原理可参照前述图2至图6所示实施例中的所有技术方案，在此不作赘述，由于采用了本实施例的断线修补系统，有效避免了扫描线和数据线断线交叉处发生短路，实现了同时修补两个金属层交叉处断线，且提高了断线修补良率。
以上所述仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种断线修补方法，其特征在于，包括步骤：
    形成连接扫描线的断线两端的第一修补线；
    形成覆盖所述第一修补线的绝缘层；
    形成连接数据线的断线两端的第二修补线，所述第二修补线与第一修补线的交叉处具有所述绝缘层。
  2. 根据权利要求1所述的断线修补方法，其特征在于，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
    形成部分覆盖第一修补线的绝缘层。
  3. 根据权利要求1所述的断线修补方法，其特征在于，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
    预先设置第二修补线的形成位置；
    根据设置的第二修补线的形成位置确定第一修补线与第二修补线的交叉位置；
    在第一修补线与第二修补线的交叉位置形成覆盖该交叉位置的绝缘层。
  4. 根据权利要求1所述的断线修补方法，其特征在于，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
    涂布绝缘膜层；
    对该绝缘膜层进行涂光阻、曝光、显影、蚀刻、去光阻制程，形成所述绝缘层。
  5. 根据权利要求1所述的断线修补方法，其特征在于，所述形成覆盖所述第一修补线的绝缘层的步骤之后还包括：
    固化所述绝缘层。
  6. 根据权利要求5所述的断线修补方法，其特征在于，所述固化所述绝缘层的步骤具体为：
    对所述绝缘层进行烘烤或对所述绝缘层进行紫外光照射。
  7. 根据权利要求1所述的断线修补方法，其特征在于，所述形成覆盖所述第一修补线的绝缘层的步骤具体包括：
    形成覆盖整条第一修补线的绝缘层。
  8. 一种断线修补结构，用于修补TFT阵列基板中扫描线与数据线的交叉处的断线，其特征在于，包括连接扫描线的断线两端的第一修补线、连接数据线断线两端的第二修补线及设置在第一修补线与第二修补线交叉处的绝缘层。
  9. 根据权利要求8所述的断线修补结构，其特征在于，所述绝缘层覆盖整条第一修补线。
  10. 根据权利要求8所述的断线修补结构，其特征在于，所述绝缘层覆盖部分第一修补线。
  11. 一种断线修补系统，其特征在于，包括：
    镀线装置，用于形成连接扫描线的断线两端的第一修补线和连接数据线的断线两端的第二修补线；
    绝缘层形成装置，用于形成覆盖所述第一修补线的绝缘层。
  12. 根据权利要求11所述的断线修补系统，其特征在于，所述绝缘层形成装置具体包括：
    涂布定位模块，用于预先设置第二修补线的形成位置；根据设置的第二修补线的形成位置确定第一修补线与第二修补线的交叉位置；
    涂布模块，用于在第一修补线与第二修补线的交叉位置形成覆盖该交叉位置的绝缘层。
  13. 根据权利要求12所述的断线修补系统，其特征在于，所述涂布模块具体包括：
    涂布单元，用于涂布绝缘膜层；
    成型单元，用于对所述绝缘膜层进行涂光阻、曝光、显影、蚀刻、去光阻制程，形成所述绝缘层。
  14. 根据权利要求12所述的断线修补系统，其特征在于，所述涂布模块具体还包括：
    固化单元，用于固化所述绝缘层。
  15. 根据权利要求14所述的断线修补系统，其特征在于，所述固化单元为烘烤机或紫外光照射器。
  16. 根据权利要求11所述的断线修补系统，其特征在于，所述绝缘层形成装置具体用于，形成部分覆盖第一修补线的绝缘层。
  17. 根据权利要求11所述的断线修补系统，其特征在于，所述绝缘层形成装置具体用于，形成覆盖整条第一修补线的绝缘层。
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